Organic-based field-effect transistors (OFETs) utilize organic semiconductor materials with low electron mobilities and organic gate oxide materials with low dielectric constants. These have rendered devices with slow operating speeds and high operating voltages, compared with their inorganic silicon-based counter parts. Using a deoxyribonucleic acid (DNA)-based biopolymer, derived from salmon milt and roe sac waste by-products, for the gate dielectric region, we have fabricated an OFET device that exhibits very promising current-voltage characteristics compared with using other organic-based dielectrics. With minimal optimization, using a thin film of DNA-based biopolymer as the gate insulator and pentacene as the semiconductor, we have demonstrated a bio-organic-FET, or BiOFET, in which the current was modulated over three orders of magnitude using gate voltages less than 10V.

1.
J. A.
Rogers
 et al.,
Proc. Natl. Acad. Sci. U.S.A.
98
,
4835
(
2001
).
2.
H. E. A.
Huitema
 et al.,
Nature (London)
414
,
599
(
2001
).
3.
C. D.
Sheraw
 et al.,
Appl. Phys. Lett.
80
,
1088
(
2002
).
4.
B. K.
Crone
,
A.
Dodabalapur
,
R.
Sarpeshkar
,
A.
Gelperin
,
H. E.
Katz
, and
Z.
Bao
,
J. Appl. Phys.
91
,
10140
(
2001
).
5.
D. M.
De Leew
,
G. H.
Gelinck
,
T. C. T.
Geuns
,
E.
Van Veenendaal
,
E.
Cantatore
, and
B. H.
Huisman
,
Tech. Dig. - Int. Electron Devices Meet.
2002
,
293
.
6.
P. F.
Baude
,
D. A.
Ender
,
M. A.
Haase
,
T. W.
Kelley
,
D. V.
Muyres
, and
S. D.
Theiss
,
Appl. Phys. Lett.
82
,
3964
(
2003
).
7.
H.
Klauk
,
M.
Halik
,
U.
Zschieschang
,
F.
Eder
,
G.
Schmid
, and
Ch.
Dehm
,
Appl. Phys. Lett.
82
,
4175
(
2003
).
8.
B.
Crone
,
A.
Dodabalapur
,
Y.-Y.
Lin
,
R. W.
Fillas
,
Z.
Bao
,
R
.
Sarpeshkar
,
H. E.
Katz
, and
W.
Li
,
Nature (London)
403
,
521
(
2000
).
9.
S. F.
Nelson
,
Y.-Y.
Lin
,
D. J.
Gundlach
, and
T. N.
Jackson
,
Appl. Phys. Lett.
72
,
1854
(
1998
).
10.
S.
Kobayashi
,
T.
Takenobu
,
S.
Mori
,
A.
Fujiwara
, and
Y.
Iwasa
,
Appl. Phys. Lett.
82
,
458
(
2003
).
11.
Th. B.
Singh
 et al.,
Org. Electron.
6
,
105
(
2005
).
12.
Th. B.
Singh
 et al.,
Mater. Res. Soc. Symp. Proc.
871E
,
I4
9
(
2005
).
13.
H.
Klauk
,
M.
Halik
,
U.
Zschieschang
,
G.
Schmid
,
W.
Radlik
, and
W.
Weber
,
J. Appl. Phys.
92
,
5259
(
2002
).
14.
R.
Parashkov
,
E.
Becker
,
G.
Ginev
,
T.
Riedl
,
H.-H.
Johannes
, and
W.
Kowalsky
,
J. Appl. Phys.
95
,
1594
(
2004
).
15.
J.
Park
,
S. Y.
Park
,
S.
Shim
,
H.
Kang
, and
H. H.
Lee
,
Appl. Phys. Lett.
85
,
3283
(
2004
).
16.
F.
Dinelli
,
M.
Murgia
,
P.
Levy
,
M.
Cavallini
,
F.
Biscarini
, and
D. M.
de Leeuw
,
Phys. Rev. Lett.
92
,
116802
(
2004
).
17.
Th. B.
Singh
,
N.
Marjanović
,
G. J.
Matt
,
S.
Gunes
,
N. S.
Sariciftci
,
R.
Schwödiauer
, and
S.
Bauer
,
J. Appl. Phys.
97
,
083714
(
2005
).
18.
S. M.
Sze
,
Physics of Semiconductor Devices
, 2nd ed. (
Wiley
,
New York
,
1981
).
19.
M.
Halik
,
H.
Klauk
,
U.
Zschieschang
,
G.
Schmid
,
Ch.
Dehm
,
M.
Schütz
,
S.
Malsch
,
F.
Effnberger
,
M.
Brunnbauer
, and
F.
Stellacci
,
Nature (London)
431
,
963
(
2004
).
20.
M. J.
Panzer
,
C. R.
Newman
, and
C. D.
Frisbie
,
Appl. Phys. Lett.
86
,
103503
(
2005
).
21.
L.
Wang
,
J.
Yoshida
,
N.
Ogata
,
S.
Sasaki
, and
T.
Kajiyama
,
Chem. Mater.
13
,
1273
(
2001
).
22.
G.
Zhang
,
L.
Wang
,
J.
Yoshida
, and
N.
Ogata
,
Proc. SPIE
4580
,
337
(
2001
).
23.
J.
Grote
,
N.
Ogata
,
D.
Diggs
, and
F.
Hopkins
,
Proc. SPIE
4991
,
621
(
2003
).
24.
J.
Grote
 et al.,
Proc. SPIE
5221
,
53
, (
2003
).
25.
J. G.
Grote
 et al.,
J. Phys. Chem. B
108
,
8589
(
2004
).
26.
J. A.
Hagen
 et al.,
Proc. SPIE
5351
,
77
(
2004
).
27.
E.
Heckman
 et al.,
Proc. SPIE
,
5516
,
47
(
2004
).
28.
J. G.
Grote
 et al.,
Proc. SPIE
5621
,
16
(
2004
).
29.
J. G.
Grote
 et al.,
Mol. Cryst. Liq. Cryst.
426
,
3
(
2005
).
30.
P. V.
Pesavento
,
R. J.
Chesterfield
,
C. R.
Newman
, and
C. D.
Frisbie
,
J. Appl. Phys.
96
,
7312
(
2004
).
31.
L.
Burgi
,
T. J.
Richards
,
R. H.
Friend
, and
H.
Sirringhaus
,
J. Appl. Phys.
94
,
6129
(
2003
).
32.
E. J.
Meijer
,
G. H.
Gelinck
,
E. V.
Veenendaal
,
B. H.
Huisman
,
D. M. d.
Leeuw
, and
T. M.
Klapwijk
,
Appl. Phys. Lett.
82
,
4576
(
2003
).
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