In this paper we present structural and electrical investigations on high temperature Fe-implanted InP. The aim of the work is to relate the lattice position of the implanted atoms after annealing treatments (from ) with their electrical activation as compensating deep traps and to draw a comprehensive picture of the activation mechanisms. The overall results demonstrate that the electrical behavior and the deep trap activation properties are strictly connected to the annealing evolution of the implant-induced damage and to the escape process of the Fe atoms from substitutional sites, which in turn is controlled by the background doping density in the substrates.
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