Barium zirconate titanate (BZT) thin films on (LSMO)-coated Si and substrates have been prepared by pulsed laser deposition and crystallized in situ at . Four capacitor types of LSMO∕BZT∕LSMO∕Si, Pt∕BZT∕LSMO∕Si, , and were prepared to investigate the structural and dielectric properties, tunability, and figure of merits. Among them, the high (100)-oriented BZT films were grown on the (100)-textured LSMO and (111)-textured Pt electrodes. The results show that the LSMO∕BZT∕LSMO∕Si has the highest dielectric constant of 555 and has the highest tunability of 73% at . The high dielectric constant and tunability have been attributed to the (100) texture of the LSMO bottom layer leading to the decrease of the thickness of the interface of the dead layer.
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1 December 2006
Research Article|
December 06 2006
Enhanced dielectric properties of highly (100)-oriented thin films grown on bottom layer
X. G. Tang;
X. G. Tang
a)
School of Physics and Optoelectric Engineering,
Guangdong University of Technology
, 729 East Dongfeng Road, Guangzhou 510090, People’s Republic of China
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Q. X. Liu;
Q. X. Liu
School of Physics and Optoelectric Engineering,
Guangdong University of Technology
, 729 East Dongfeng Road, Guangzhou 510090, People’s Republic of China
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Y. P. Jiang;
Y. P. Jiang
School of Physics and Optoelectric Engineering,
Guangdong University of Technology
, 729 East Dongfeng Road, Guangzhou 510090, People’s Republic of China
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R. K. Zheng;
R. K. Zheng
Department of Applied Physics, Materials Research Centre,
The Hong Kong Polytechnic University
, Hung Hom, Kowloon, Hong Kong, People’s Republic of China
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H. L. W. Chan
H. L. W. Chan
Department of Applied Physics, Materials Research Centre,
The Hong Kong Polytechnic University
, Hung Hom, Kowloon, Hong Kong, People’s Republic of China
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a)
Author to whom correspondence should be addressed; FAX: +86-20-3932 2265; electronic mail: [email protected]
J. Appl. Phys. 100, 114105 (2006)
Article history
Received:
June 04 2006
Accepted:
September 10 2006
Citation
X. G. Tang, Q. X. Liu, Y. P. Jiang, R. K. Zheng, H. L. W. Chan; Enhanced dielectric properties of highly (100)-oriented thin films grown on bottom layer. J. Appl. Phys. 1 December 2006; 100 (11): 114105. https://doi.org/10.1063/1.2393010
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