Compositional, structural, and optical properties of molecular-beam epitaxy grown films were characterized by transmission electron microscopy (TEM), x-ray diffraction, and cathodoluminescence spectroscopy. Spontaneous modulation, phase separation, and band gap reductions were observed to vary systematically with AlN mole fraction across the full alloy series. At low AlN mole fraction , AlGaN epilayers display pronounced phase separation. With increasing AlN mole fraction, phase separation is strongly suppressed by the formation of spontaneous modulation which high spatial resolution TEM techniques unambiguously determine to be atomic-scale compositional superlattice. The formation of the spontaneous superlattice is considered responsible for the pronounced reductions in band gaps and emission energies, exceeding several hundred meV for the Al-rich AlGaN, which has been confirmed by band structure calculations.
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15 November 2006
Research Article|
November 20 2006
Compositional modulation and optical emission in AlGaN epitaxial films
Min Gao;
Min Gao
a)
Department of Electrical and Computer Engineering,
The Ohio State University
, Columbus, Ohio 43210
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S. T. Bradley;
S. T. Bradley
Department of Electrical and Computer Engineering,
The Ohio State University
, Columbus, Ohio 43210
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Yu Cao;
Yu Cao
Department of Electrical Engineering,
University of Notre Dame
, Notre Dame, Indiana 46556
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D. Jena;
D. Jena
Department of Electrical Engineering,
University of Notre Dame
, Notre Dame, Indiana 46556
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Y. Lin;
Y. Lin
Department of Electrical and Computer Engineering,
The Ohio State University
, Columbus, Ohio 43210
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S. A. Ringel;
S. A. Ringel
Department of Electrical and Computer Engineering,
The Ohio State University
, Columbus, Ohio 43210
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J. Hwang;
J. Hwang
Department of Electrical and Computer Engineering,
Cornell University
, Ithaca, New York 14853
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W. J. Schaff;
W. J. Schaff
Department of Electrical and Computer Engineering,
Cornell University
, Ithaca, New York 14853
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L. J. Brillson
L. J. Brillson
Department of Electrical and Computer Engineering,
The Ohio State University
, Columbus, Ohio 43210; Department of Physics, The Ohio State University
, Columbus, Ohio 43210; and Center for Materials Research, The Ohio State University
, Columbus, Ohio 43210
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a)
Present address: Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, China; electronic mail: [email protected]
J. Appl. Phys. 100, 103512 (2006)
Article history
Received:
September 08 2006
Accepted:
September 15 2006
Citation
Min Gao, S. T. Bradley, Yu Cao, D. Jena, Y. Lin, S. A. Ringel, J. Hwang, W. J. Schaff, L. J. Brillson; Compositional modulation and optical emission in AlGaN epitaxial films. J. Appl. Phys. 15 November 2006; 100 (10): 103512. https://doi.org/10.1063/1.2382622
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