Theoretical study of current overflow in GaN based light emitters with superlattice cladding layers

We investigate the effect of the short-period superlattice cladding layer on electron current overflow in nitride light emitters. The classical drift-diffusion current flow and quantum tunneling transport through the miniband are considered. We show that the drift-diffusion electron current in the $p$-type superlattice cladding layer is drastically reduced by the presence of the intrinsic built-in electric fields. Based on this finding, we propose a design of the electron blocking layer which should considerably lower the electron current overflow in nitride light emitters.