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Defects in Semiconductors 2024

Current technology heavily relies on our ability to detect, control, and understand defects in semiconductors. Whether beneficial or detrimental, defects play crucial roles in various semiconductor materials. Advances in synthesis, thin-film growth, microscopy, spectroscopy, and theory have led to new insights into how defects behave in these materials, improving performance in applications such as silicon chips, photovoltaics, light-emitting diodes, laser diodes, and quantum information. This Special Topic on Defects in Semiconductors provides a valuable forum where researchers can share their latest and most innovative findings related to the fundamentals of defects in semiconductors.

Guest Editors: John L. Lyons, Anderson Janotti, Darshana Wickramaratne, and Cyrus Dreyer

TUTORIALS

Tutorial: Defects in topological semimetals

Kirstin Alberi; Chase Brooks; Ian Leahy; Stephan Lany

https://doi.org/10.1063/5.0217533

Physics of Semiconductors

Addressing accuracy by prescribing precision: Bayesian error estimation of point defect energetics

Andrew Timmins; Rachel C. Kurchin

https://doi.org/10.1063/5.0211543

Quantum Physics and Technology

Photoexcitation and recombination processes of the neutral nitrogen-vacancy center in diamond from first principles

Gergő Thiering; Adam Gali

https://doi.org/10.1063/5.0221228

Physics of Semiconductors

Al–O–Al defect complexes as possible candidates for channel electron mobility reducing trapping centers in 4H-SiC metal–oxide–semiconductor field-effect transistors

N. Smith; J. Berens; G. Pobegen; T. Grasser; A. Shluger

https://doi.org/10.1063/5.0213528

Physics of Semiconductors

On the nature of as-grown and irradiation-induced Ga vacancy defects in β-Ga₂O₃

Iuliia Zhelezova; Ilja Makkonen; Filip Tuomisto

https://doi.org/10.1063/5.0205933

Physics of Semiconductors

Defect behavior during growth of heavily phosphorus doped Czochralski silicon crystals (II): Theoretical study

Koji Sueoka; Yasuhito Narushima; Kazuhisa Torigoe; Naoya Nonaka; Koutaro Koga; Toshiaki Ono; Hiroshi Horie; Masataka Hourai

https://doi.org/10.1063/5.0200130

Physics of Semiconductors

Investigation of the solar cell materials Cu(In,Ga)Se₂ and Cu₂ZnSnS₄ with muon spin spectroscopy and density-functional calculations

R. C. Vilão; A. G. Marinopoulos; D. G. Santos; H. V. Alberto; J. M. Gil; P. W. Mengyan; M. Kauk-Kuusik; J. S. Lord; A. Weidinger

https://doi.org/10.1063/5.0205837

Physics of Semiconductors

Defect behavior during growth of heavily phosphorus-doped Czochralski silicon crystals. I. Experimental study

Masataka Hourai; Yasuhito Narushima; Kazuhisa Torigoe; Naoya Nonaka; Koutaro Koga; Toshiaki Ono; Hiroshi Horie; Koji Sueoka

https://doi.org/10.1063/5.0216898

Physics of nanoscale, 2D materials, and low-dimensional systems

Vanadium embedded in monolayer silicene: Energetics and proximity-induced magnetism

A. T. Raji; D. P. A. Maboe; E. M. Benecha; M. Dongho-Nguimdo; E. Igumbor; E. B. Lombardi

https://doi.org/10.1063/5.0205918

Physics of Semiconductors

Deep level traps in (010) β-Ga₂O₃ epilayers grown by metal organic chemical vapor deposition on Sn-doped β-Ga₂O₃ substrates

C. A. Dawe; V. P. Markevich; M. P. Halsall; I. D. Hawkins; A. R. Peaker; A. Nandi; I. Sanyal; M. Kuball

https://doi.org/10.1063/5.0202581

Physics of Semiconductors

The effect of shear on nucleation and movement of basal plane dislocations in 4H-SiC

Yanwei Yang; Keqiang Li; Zhouyu Tong; Xiaodong Pi; Deren Yang; Yuanchao Huang

https://doi.org/10.1063/5.0212043

Physics of Semiconductors

Influence of Xe⁺ and Ga⁺ milling species on the cathodoluminescence of wurtzite and zincblende GaN

K. Loeto; S. M. Fairclough; I. Griffiths; G. Kusch; S. Ghosh; M. J. Kappers; N. Young; R. A. Oliver

https://doi.org/10.1063/5.0211529

Physics of Matter under Extreme Conditions

Synchrotron-based x-ray diffraction analysis of energetic ion-induced strain in GaAs and 4H-SiC

Anusmita Chakravorty; Alexandre Boulle; Aurélien Debelle; Gouranga Manna; Pinku Saha; D. Kanjilal; Debdulal Kabiraj

https://doi.org/10.1063/5.0205284

Physics of Semiconductors

Quantification of the strong, phonon-induced Urbach tails in β-Ga₂O₃ and their implications on electrical breakdown

Ariful Islam; Nathan David Rock; Michael A. Scarpulla

https://doi.org/10.1063/5.0211588

Physics of Materials, Including Electrical, Thermal, Mechanical and Other Properties

Probing electronic and dielectric properties of ultrathin Ga₂O₃/Al₂O₃ atomic layer stacks made with in vacuo atomic layer deposition

Aafiya; Angelo Marshall; Berg Dodson; Ryan Goul; Sierra Seacat; Hartwin Peelaers; Kevin Bray; Dan Ewing; Michael Walsh; Judy Z. Wu

https://doi.org/10.1063/5.0208590

Physics of Materials, Including Electrical, Thermal, Mechanical and Other Properties

Structural characterization of threading dislocation in α-Ga₂O₃ thin films on c- and m-plane sapphire substrates

Hitoshi Takane; Shinya Konishi; Yuichiro Hayasaka; Ryo Ota; Takeru Wakamatsu; Yuki Isobe; Kentaro Kaneko; Katsuhisa Tanaka

https://doi.org/10.1063/5.0206863

Thin Films, Interfaces, and Surfaces

Impact of oxygen vacancy on luminescence properties of dysprosium-doped zinc oxide thin films

Animesh Mandal; Arun G. Banpurkar; Shashikant D. Shinde; Suhas M. Jejurikar

https://doi.org/10.1063/5.0205885

Physics of Semiconductors

Observation of temperature-dependent capture cross section for main deep-levels in β-Ga₂O₃

A. A. Vasilev; A. I. Kochkova; A. Y. Polyakov; A. A. Romanov; N. R. Matros; L. A. Alexanyan; I. V. Shchemerov; S. J. Pearton

https://doi.org/10.1063/5.0209322

Physics of Semiconductors

Improvement of linearity in trap-rich substrates for radio frequency applications: Which of donor and acceptor trap is the best?

Justine Philippe; Jean-François Robillard; Daniel Gloria; Emmanuel Dubois

https://doi.org/10.1063/5.0205853

Physics of Semiconductors

Investigating the initialization and readout of relative populations of NV⁻ and NV⁰ defects in diamond

Rodrick Kuate Defo; Steven L. Richardson

https://doi.org/10.1063/5.0205476

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Defects in Semiconductors 2024

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Defects in Semiconductors 2024

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