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Plasma Physics and Science in Current and Next Generation Semiconductor Process

This Special Topic collects invited articles from the International Conference on Microelectronics and Plasma Technology (ICMAP). This collection is devoted to understanding plasma source, plasma parameters, plasma-surface interaction, and processing results in semiconductor process, and to bring new insight from theory and experiment for the next generation plasma process.

Guest editor: Hyo-Chang Lee

Hyo-Chang Lee
10.1063/5.0093975
Aixian Zhang; Min-Seok Kim; Young-Hun Hong; Jun-Hyeon Moon; Kyung-Hyun Kim; Chin-Wook Chung
10.1063/5.0064438
J. Moreno; A. Khodaee; D. Okerstrom; M. P. Bradley; L. Couëdel
10.1063/5.0063610
Seolhye Park; Jaegu Seong; Yeongil Noh; Yoona Park; Yongsuk Jang; Taeyoung Cho; Jae-Ho Yang; Gon-Ho Kim
10.1063/5.0048963
Xiao-Long Wang; Shu-Han Gao; Yuan-Tao Zhang
10.1063/5.0048966
Min Young Yoon; H. J. Yeom; Jung Hyung Kim; Won Chegal; Yong Jai Cho; Deuk-Chul Kwon; Jong-Ryul Jeong; Hyo-Chang Lee
10.1063/5.0047811
Lei Tong; Yu-Ru Zhang; Jia-Wei Huang; Ming-Liang Zhao; De-Qi Wen; Yuan-Hong Song; You-Nian Wang
10.1063/5.0048522
Yue Liu; Jan Trieschmann; Birk Berger; Julian Schulze; Thomas Mussenbrock
10.1063/5.0045947
Yan Feng; Wei Li; C. Reichhardt; C. J. O. Reichhardt; M. S. Murillo
10.1063/5.0044382
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