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Defects in Semiconductors 2022

Understanding defects and their complexes in semiconductors and low-dimensional structures is an important challenge for modern technology and physics. This endeavor is supported by advances in thin-film growth, microscopy, spectroscopy, and theory. Applications include electronic circuit components and chips, power electronics, solar cells, light-emitting diodes and laser diodes, as well as quantum computing. This Special Topic on Defects in Semiconductors provides a valuable forum where researchers studying the fundamentals of defects in semiconductors can share their most recent and novel findings.

Guest Editors: Lasse Vines, Andrej Yu. Kuznetsov, and Eduard Monakhov

EDITORIALS

Defects in semiconductors

L. Vines; E. Monakhov; A. Kuznetsov

10.1063/5.0127714

Physics of Semiconductors

The restricted random dislocation distribution model to describe ensembles of dislocations with a screw component in ZnO layers with a mosaic structure

R. Schifano; A. Wierzbicka; P. Dluzewski; J. Z. Domagala; W. Wozniak; B. Kurowska; C. Bazioti; E. Guziewicz

10.1063/5.0086295

PERSPECTIVES

Perspective on atomic scale investigation of point and extended defects in gallium oxide

Hsien-Lien Huang; Christopher Chae; Jinwoo Hwang

10.1063/5.0087053

Thin Films, Interfaces, and Surfaces

External charge compensation in etched gallium nitride measured by x-ray photoelectron spectroscopy

Kevin A. Hatch; Daniel C. Messina; Houqiang Fu; Kai Fu; Yuji Zhao; Robert J. Nemanich

10.1063/5.0085529

Physics of Materials, Including Electrical, Thermal, Mechanical and Other Properties

Electronic transport properties of Pb(Bi_1−xSb_x)₂(Te_1−ySe_y)₄ topological insulator

Yuki Tokumoto; Kyoichi Sugimoto; Yuya Hattori; Keiichi Edagawa

10.1063/5.0077002

Physics of Semiconductors

Compensation of p-type doping in Al-doped 4H-SiC

Yuanchao Huang; Rong Wang; Yiqiang Zhang; Deren Yang; Xiaodong Pi

10.1063/5.0085510

Physics of Semiconductors

Maximizing the electronic charge carriers in donor-doped hematite under oxygen-rich conditions via doping and co-doping strategies revealed by density functional theory calculations

Hoda El-Gibally; Shehab Shousha; Nageh K. Allam; Mostafa Youssef

10.1063/5.0077108

PERSPECTIVES

Characterization methods for defects and devices in silicon carbide

M. E. Bathen; C. T.-K. Lew; J. Woerle; C. Dorfer; U. Grossner; S. Castelletto; B. C. Johnson

10.1063/5.0077299

PERSPECTIVES

Quantum information processing with integrated silicon carbide photonics

Sridhar Majety; Pranta Saha; Victoria A. Norman; Marina Radulaski

10.1063/5.0077045

Physics of Semiconductors

Fine core structure and spectral luminescence features of freshly introduced dislocations in Fe-doped GaN

S. Shapenkov; O. Vyvenko; E. Ubyivovk; V. Mikhailovskii

10.1063/5.0080381

Physics of Devices and Sensors

Transport properties of a thin GaN channel formed in an Al_0.9Ga_0.1N/GaN heterostructure grown on AlN/sapphire template

Julien Bassaler; Rémi Comyn; Catherine Bougerol; Yvon Cordier; Farid Medjdoub; Philippe Ferrandis

10.1063/5.0077107

Physics of Semiconductors

Electron- and proton irradiation of strongly doped silicon of p-type: Formation and annealing of boron-related defects

Vadim Emtsev; Nikolay Abrosimov; Vitalii Kozlovski; Stanislav Lastovskii; Gagik Oganesyan; Dmitrii Poloskin

10.1063/5.0078043

Physics of Semiconductors

Thermal annealing of GaN implanted with Be

M. A. Reshchikov; O. Andrieiev; M. Vorobiov; D. Ye; D. O. Demchenko; K. Sierakowski; M. Bockowski; B. McEwen; V. Meyers; F. Shahedipour-Sandvik

10.1063/5.0080060

Physics of Semiconductors

Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide

S. B. Kjeldby; A. Azarov; P. D. Nguyen; V. Venkatachalapathy; R. Mikšová; A. Macková; A. Kuznetsov; Ø. Prytz; L. Vines

10.1063/5.0083858

Physics of Semiconductors

Investigation of wurtzite formation in MOVPE-grown zincblende GaN epilayers on Al_xGa_1−xN nucleation layers

Abhiram Gundimeda; Martin Frentrup; Simon M. Fairclough; Menno J. Kappers; David J. Wallis; Rachel A. Oliver

10.1063/5.0077186

Physics of Semiconductors

Influence of heat treatments in H 2 and Ar on the E₁ center in β-Ga₂O₃

Amanda Langørgen; Christian Zimmermann; Ymir Kalmann Frodason; Espen Førdestrøm Verhoeven; Philip Michael Weiser; Robert Michael Karsthof; Joel Basile Varley; Lasse Vines

10.1063/5.0083861

Physics of Semiconductors