We show that classical chaotic scattering has experimentally measurable consequences for the quantum conductance of semiconductor microstructures. These include the existence of conductance fluctuations—a sensitivity of the conductance to either Fermi energy or magnetic field—and weak‐localization—a change in the average conductance upon applying a magnetic field. We develop a semiclassical theory and present numerical results for these two effects in which we model the microstructures by billiards attached to leads. We find that the difference between chaotic and regular classical scattering produces a qualitative difference in the fluctuation spectrum and weak‐localization lineshape of chaotic and nonchaotic structures. While the semiclassical theory within the diagonal approximation accounts well for the weak‐localization lineshape and for the spectrum of the fluctuations, we uncover a surprising failure of the semiclassical diagonal‐approximation theory in describing the magnitude of these quantum transport effects.
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October 1993
Research Article|
October 01 1993
Quantum‐chaotic scattering effects in semiconductor microstructures
Harold U. Baranger;
Harold U. Baranger
AT&T Bell Laboratories 1D‐230, 600 Mountain Avenue, Murray Hill, New Jersey 07974‐0636
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Rodolfo A. Jalabert;
Rodolfo A. Jalabert
Division de Physique Théorique,a) Institut de Physique Nucléaire, F‐91406 Orsay Cedex, France
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A. Douglas Stone
A. Douglas Stone
Applied Physics, Yale University, P.O. Box 208284, New Haven, Connecticut 06520‐8284
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Chaos 3, 665–682 (1993)
Article history
Received:
July 30 1993
Accepted:
October 13 1993
Citation
Harold U. Baranger, Rodolfo A. Jalabert, A. Douglas Stone; Quantum‐chaotic scattering effects in semiconductor microstructures. Chaos 1 October 1993; 3 (4): 665–682. https://doi.org/10.1063/1.165928
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