Publishers Note: “Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport” [Appl. Phys. Rev. 1, 011102 (2014)]

Tanaka, Masaaki; Ohya, Shinobu; Nam Hai, Pham

doi:10.1063/1.4863688

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Correction| January 22 2014

Publishers Note: “Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport” [Appl. Phys. Rev. 1, 011102 (2014)]

Masaaki Tanaka;

Masaaki Tanaka ^a)

1

Department of Electrical Engineering and Information Systems, The University of Tokyo

, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656,

Japan

2

Institute for Nano Quantum Electronics, The University of Tokyo

, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505,

Japan

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Shinobu Ohya;

Shinobu Ohya ^b)

1

Department of Electrical Engineering and Information Systems, The University of Tokyo

, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656,

Japan

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Pham Nam Hai

Pham Nam Hai ^c)

1

Department of Electrical Engineering and Information Systems, The University of Tokyo

, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656,

Japan

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Author & Article Information

^a)

Author to whom correspondence should be addressed. Electronic mail: [email protected]

^b)

[email protected]

^c)

[email protected]

Appl. Phys. Rev. 1, 019901 (2014)

https://doi.org/10.1063/1.4863688

This article was originally published online on 8 January 2014 with typographical errors. AIP Publishing apologizes for these errors. All online versions of the article were corrected on 15 January 2014.

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Publishers Note: “Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport” [Appl. Phys. Rev. 1, 011102 (2014)]

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