The topological phenomenon has been extensively studied in condensed matter physics and has attracted much attention in many different fields. Like electrons, phonons can also be studied using critical theorems and topology concepts, giving impetus to the birth of topological phonons. Among the topological phonons, the topological nodal line phonons in crystalline materials have emerged as a new area of rapid development in both experiment and theory. Researchers have been hunting for realistic materials with nodal line phonons for the last four years. To date, however, a timely review of recent advances in topological nodal line phonons, and especially their material realization, is still lacking. Considering the classification of the nodal line states, in this review, we will first review the identification of the materials hosting the nodal line phonons with different degeneracies, different types of dispersion, and different geometric shapes in theory. Moreover, we will review and discuss the reasons for the appearance of the nodal line phonons from the viewpoint of symmetry. Second, we will review the case where the nodal line appears in the projected surface phonon states instead of the bulk phonon states. Third, we will review the experimental material realization of nodal line phonons. Finally, we will present a summary, outlook, and additional notes. We believe that this review will contribute to a more advanced understanding of topological nodal line phonons in solid materials and will offer new perspectives on this rapidly expanding field.
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December 2022
Review Article|
November 04 2022
Topological nodal line phonons: Recent advances in materials realization
Xiaotian Wang
;
Xiaotian Wang
a)
(Conceptualization, Writing – original draft, Writing – review & editing)
1
School of Physical Science and Technology, Southwest University
, Chongqing 400715, China
2
Institute for Superconducting and Electronic Materials (ISEM), University of Wollongong
, Wollongong 2500, Australia
a)Authors to whom correspondence should be addressed: cheng@uow.edu.au, zzy@mail.buct.edu.cn, and zhangg@ihpc.a-star.edu.sg
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Tie Yang
;
Tie Yang
(Writing – original draft)
1
School of Physical Science and Technology, Southwest University
, Chongqing 400715, China
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Zhenxiang Cheng
;
Zhenxiang Cheng
a)
(Conceptualization, Supervision, Writing – review & editing)
2
Institute for Superconducting and Electronic Materials (ISEM), University of Wollongong
, Wollongong 2500, Australia
a)Authors to whom correspondence should be addressed: cheng@uow.edu.au, zzy@mail.buct.edu.cn, and zhangg@ihpc.a-star.edu.sg
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Gokhan Surucu
;
Gokhan Surucu
(Writing – original draft)
3
Department of Energy Systems Engineering, Gazi University
, Ankara 06500, Turkey
4
Department of Electrics and Energy, Ahi Evran University
, Kirsehir 40100, Turkey
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Jianhua Wang;
Jianhua Wang
(Writing – original draft)
1
School of Physical Science and Technology, Southwest University
, Chongqing 400715, China
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Feng Zhou;
Feng Zhou
(Writing – original draft)
1
School of Physical Science and Technology, Southwest University
, Chongqing 400715, China
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Zeying Zhang
;
Zeying Zhang
a)
(Supervision, Writing – review & editing)
5
College of Science, Beijing University of Chemical Technology
, Beijing 100029, China
a)Authors to whom correspondence should be addressed: cheng@uow.edu.au, zzy@mail.buct.edu.cn, and zhangg@ihpc.a-star.edu.sg
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Gang Zhang
Gang Zhang
a)
(Supervision, Writing – review & editing)
6
Institute of High Performance Computing, Agency for Science, Technology and Research (A*STAR)
, Singapore
138632a)Authors to whom correspondence should be addressed: cheng@uow.edu.au, zzy@mail.buct.edu.cn, and zhangg@ihpc.a-star.edu.sg
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a)Authors to whom correspondence should be addressed: cheng@uow.edu.au, zzy@mail.buct.edu.cn, and zhangg@ihpc.a-star.edu.sg
Appl. Phys. Rev. 9, 041304 (2022)
Article history
Received:
April 09 2022
Accepted:
September 30 2022
Citation
Xiaotian Wang, Tie Yang, Zhenxiang Cheng, Gokhan Surucu, Jianhua Wang, Feng Zhou, Zeying Zhang, Gang Zhang; Topological nodal line phonons: Recent advances in materials realization. Appl. Phys. Rev. 1 December 2022; 9 (4): 041304. https://doi.org/10.1063/5.0095281
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