The exfoliation and identification of the two-dimensional (2D) single atomic layer of carbon have opened the opportunity to explore graphene and related 2D materials due to their unique properties. 2D materials are regarded as one of the most exciting solutions for next generation electronics and optoelectronics in the technological evolution of semiconductor technology. In this review, we focus on the core concept of “structure-property relationships” to explain the state-of-the-art of 2D materials and summarize the unique electrical and light-matter interaction properties in 2D materials. Based on this, we discuss and analyze the structural properties of 2D materials, such as defects and dopants, the number of layers, composition, phase, strain, and other structural characteristics, which could significantly alter the properties of 2D materials and hence affect the performance of semiconductor devices. In particular, the building blocks principles and potential electronic and optoelectronic applications based on 2D materials are explained and illustrated. Indeed, 2D materials and related heterostructures offer the promise for challenging the existing technologies and providing the chance to have social impact. More efforts are expected to propel this exciting field forward.
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June 2017
Review Article|
June 06 2017
Graphene and related two-dimensional materials: Structure-property relationships for electronics and optoelectronics Available to Purchase
Xinming Li
;
Xinming Li
1Department of Electronic Engineering,
The Chinese University of Hong Kong
, Hong Kong, China
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Li Tao
;
Li Tao
b)
1Department of Electronic Engineering,
The Chinese University of Hong Kong
, Hong Kong, China
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Zefeng Chen;
Zefeng Chen
b)
1Department of Electronic Engineering,
The Chinese University of Hong Kong
, Hong Kong, China
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Hui Fang;
Hui Fang
2Department of Electrical and Computer Engineering,
Northeastern University
, Boston, Massachusetts 02115, USA
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Xuesong Li;
Xuesong Li
3State Key Laboratory of Electronic Thin Films and Integrated Devices and School of Microelectronics and Solid State Electronics,
University of Electronic Science and Technology of China
, Chengdu 610054, China
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Xinran Wang;
Xinran Wang
4National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures,
Nanjing University
, Nanjing 210093, China
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Jian-Bin Xu
;
Jian-Bin Xu
a)
1Department of Electronic Engineering,
The Chinese University of Hong Kong
, Hong Kong, China
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Hongwei Zhu
Hongwei Zhu
a)
5State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering,
Tsinghua University
, Beijing 100084, China
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Xinming Li
1
Li Tao
1,b)
Zefeng Chen
1,b)
Hui Fang
2
Xuesong Li
3
Xinran Wang
4
Jian-Bin Xu
1,a)
Hongwei Zhu
5,a)
1Department of Electronic Engineering,
The Chinese University of Hong Kong
, Hong Kong, China
2Department of Electrical and Computer Engineering,
Northeastern University
, Boston, Massachusetts 02115, USA
3State Key Laboratory of Electronic Thin Films and Integrated Devices and School of Microelectronics and Solid State Electronics,
University of Electronic Science and Technology of China
, Chengdu 610054, China
4National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures,
Nanjing University
, Nanjing 210093, China
5State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering,
Tsinghua University
, Beijing 100084, China
a)
Authors to whom correspondence should be addressed: [email protected]; [email protected]; and [email protected]
b)
X. M. Li, L. Tao, and Z. F. Chen contributed equally to this work.
Appl. Phys. Rev. 4, 021306 (2017)
Article history
Received:
December 20 2016
Accepted:
May 03 2017
Citation
Xinming Li, Li Tao, Zefeng Chen, Hui Fang, Xuesong Li, Xinran Wang, Jian-Bin Xu, Hongwei Zhu; Graphene and related two-dimensional materials: Structure-property relationships for electronics and optoelectronics. Appl. Phys. Rev. 1 June 2017; 4 (2): 021306. https://doi.org/10.1063/1.4983646
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