As a wide bandgap semiconductor, diamond holds both excellent electrical and thermal properties, making it highly promising in the electrical industry. However, its hole mobility is relatively low and dramatically decreases with increasing temperature, which severely limits further applications. Herein, we proposed that the hole mobility can be efficiently enhanced via slight compressive shear strain along the [100] direction, while the improvement via shear strain along the [111] direction is marginal. This impressive distinction is attributed to the deformation potential and the elastic compliance matrix. The shear strain breaks the symmetry of the crystalline structure and lifts the band degeneracy near the valence band edge, resulting in a significant suppression of interband electron–phonon scattering. Moreover, the hole mobility becomes less temperature-dependent due to the decrease of electron scatterings from high-frequency acoustic phonons. Remarkably, the in-plane hole mobility of diamond is increased by at 800 K with a 2% compressive shear strain along the [100] direction. The efficient shear strain strategy can be further extended to other semiconductors with face-centered cubic geometry.
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Unlocking high hole mobility in diamond over a wide temperature range via efficient shear strain
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March 2025
Research Article|
February 04 2025
Unlocking high hole mobility in diamond over a wide temperature range via efficient shear strain
Jianshi Sun
;
Jianshi Sun
(Formal analysis, Investigation, Writing – original draft)
1
Institute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, Donghua University
, Shanghai 201620, China
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Shouhang Li
;
Shouhang Li
a)
(Conceptualization, Funding acquisition, Methodology, Project administration, Supervision, Writing – original draft, Writing – review & editing)
1
Institute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, Donghua University
, Shanghai 201620, China
2
Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay
, 10 Boulevard Thomas Gobert, Palaiseau 91120, France
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Cheng Shao
;
Cheng Shao
(Writing – review & editing)
3
Thermal Science Research Center, Shandong Institute of Advanced Technology
, Jinan, Shandong 250103, China
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Zhen Tong;
Zhen Tong
(Writing – review & editing)
4
School of Advanced Energy, Sun Yat-Sen University
, Shenzhen 518107, China
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Meng An
;
Meng An
(Writing – review & editing)
5
Department of Mechanical Engineering, The University of Tokyo
, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Yuhang Yao;
Yuhang Yao
(Writing – review & editing)
1
Institute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, Donghua University
, Shanghai 201620, China
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Yue Hu;
Yue Hu
(Writing – review & editing)
6
CTG Wuhan Science and Technology Innovation Park, China Three Gorges Corporation
, Wuhan 430010, China
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Xiongfei Zhu;
Xiongfei Zhu
(Writing – review & editing)
1
Institute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, Donghua University
, Shanghai 201620, China
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Yifan Liu;
Yifan Liu
(Writing – review & editing)
1
Institute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, Donghua University
, Shanghai 201620, China
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Renzong Wang
;
Renzong Wang
(Writing – review & editing)
1
Institute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, Donghua University
, Shanghai 201620, China
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Xiangjun Liu
;
Xiangjun Liu
b)
(Project administration, Supervision, Writing – review & editing)
1
Institute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, Donghua University
, Shanghai 201620, China
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Thomas Frauenheim
Thomas Frauenheim
(Writing – review & editing)
7
School of Science, Constructor University
, Bremen 28759, Germany
8
Institute for Advanced Study, Chengdu University
, Chengdu 610106, China
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b)
Electronic mail: [email protected]
Appl. Phys. Rev. 12, 011408 (2025)
Article history
Received:
October 29 2024
Accepted:
January 06 2025
Citation
Jianshi Sun, Shouhang Li, Cheng Shao, Zhen Tong, Meng An, Yuhang Yao, Yue Hu, Xiongfei Zhu, Yifan Liu, Renzong Wang, Xiangjun Liu, Thomas Frauenheim; Unlocking high hole mobility in diamond over a wide temperature range via efficient shear strain. Appl. Phys. Rev. 1 March 2025; 12 (1): 011408. https://doi.org/10.1063/5.0245795
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