This study utilized co-sputtering to fabricate Mo-doped VO2 films and identified an optimal concentration exhibiting a lower phase transition temperature (Th = 55.8 °C) and a broader hysteresis window ( T = 13.6 °C). At the atomistic scale, it is demonstrated that Mo dopant-induced localized strain accelerates the phase transition, which leads to the relaxation of the tetragonal structure. Furthermore, the effects of Mo doping on the phase transition process and electrical properties are characterized at the nanoscale using conductive atomic force microscopy and Kelvin probe force microscopy, and the potential application in selectors can be evaluated. The results indicated that Mo doping destabilizes the M1 phase by introducing a high density of electrons, thereby significantly reducing the electron–electron interactions as per the Mott model. Moreover, the device exhibited stable threshold and memristive properties at room temperature, quickly switching from high to low-resistance states at a threshold voltage of 2.37 V and maintaining stability over more than 1000 cycles with a selectivity >102. The present work not only highlights the role of Mo doping in enhancing the functional properties of VO2 but also demonstrates its feasibility in high-performance selectors devices.
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Nanoscale insights on phase transition dynamics of doped VO2 for memristor devices
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March 2025
Research Article|
January 27 2025
Nanoscale insights on phase transition dynamics of doped VO2 for memristor devices
Lin Wang (王林)
;
Lin Wang (王林)
(Conceptualization, Data curation, Formal analysis, Writing – original draft)
1
Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University
, Shanghai 200241, China
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Li Chen (陈立);
Li Chen (陈立)
(Formal analysis, Investigation)
1
Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University
, Shanghai 200241, China
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Xionghu Xu (许雄虎);
Xionghu Xu (许雄虎)
(Formal analysis)
1
Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University
, Shanghai 200241, China
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Zhangchen Hou (侯张晨)
;
Zhangchen Hou (侯张晨)
(Formal analysis)
1
Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University
, Shanghai 200241, China
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Yafang Li (李亚芳);
Yafang Li (李亚芳)
(Formal analysis)
1
Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University
, Shanghai 200241, China
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Liyan Shang (商丽燕)
;
Liyan Shang (商丽燕)
(Formal analysis)
1
Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University
, Shanghai 200241, China
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Jinzhong Zhang (张金中)
;
Jinzhong Zhang (张金中)
(Formal analysis)
1
Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University
, Shanghai 200241, China
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Liangqing Zhu (朱亮清)
;
Liangqing Zhu (朱亮清)
(Formal analysis)
1
Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University
, Shanghai 200241, China
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Yawei Li (李亚巍)
;
Yawei Li (李亚巍)
(Formal analysis)
1
Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University
, Shanghai 200241, China
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Fei Cao (曹菲);
Fei Cao (曹菲)
(Validation)
2
The State Key Lab of High Performance Ceramics and Superfine Microstructure & The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences
, 200050 Shanghai, China
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Genshui Wang (王根水)
;
Genshui Wang (王根水)
(Formal analysis)
2
The State Key Lab of High Performance Ceramics and Superfine Microstructure & The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences
, 200050 Shanghai, China
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Junhao Chu (褚君浩);
Junhao Chu (褚君浩)
(Supervision)
1
Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University
, Shanghai 200241, China
3
Collaborative Innovation Center of Extreme Optics, Shanxi University
, Taiyuan, Shanxi 030006, China
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Zhigao Hu (胡志高)
Zhigao Hu (胡志高)
a)
(Conceptualization, Funding acquisition, Project administration, Supervision, Writing – review & editing)
1
Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University
, Shanghai 200241, China
3
Collaborative Innovation Center of Extreme Optics, Shanxi University
, Taiyuan, Shanxi 030006, China
a)Author to whom correspondence should be addressed: [email protected]
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a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Rev. 12, 011406 (2025)
Article history
Received:
August 24 2024
Accepted:
December 10 2024
Citation
Lin Wang, Li Chen, Xionghu Xu, Zhangchen Hou, Yafang Li, Liyan Shang, Jinzhong Zhang, Liangqing Zhu, Yawei Li, Fei Cao, Genshui Wang, Junhao Chu, Zhigao Hu; Nanoscale insights on phase transition dynamics of doped VO2 for memristor devices. Appl. Phys. Rev. 1 March 2025; 12 (1): 011406. https://doi.org/10.1063/5.0235030
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