Floating-gate devices occupy a pivotal position in contemporary electronic systems, owing to their versatile capabilities in nonvolatile memory storage, analog circuit design, and emerging applications in neuromorphic computing. These devices leverage a distinctive floating-gate structure isolated from the surrounding circuitry, enabling the storage and manipulation of charge. The ability to retain charges even without external power makes them ideal for the applications requiring persistent data storage. This review explores the fundamental principles of floating-gate devices, focusing on their application in emerging logic devices combining floating-gate structures such as (i) reconfigurable logics, (ii) multi-valued logics, (iii) neuromorphic logics, and (iv) in-sensor computing. Various types of floating-gate devices for these new concept logics are examined, highlighting their key characteristics and advantages. Potential solutions and future research directions are also discussed. Based on the comprehensive review of recent three-year studies, we aim to provide an overview of floating-gate-based logic devices, emphasizing their significance in modern electronics and their potential to enable innovative applications in the fields of logic and memory devices.
Skip Nav Destination
Article navigation
September 2024
Review Article|
August 09 2024
Exploring new logic devices: Unlocking potential with floating-gate transistor
Special Collection:
Flexible and Smart Electronics
Chungryeol Lee
;
Chungryeol Lee
(Conceptualization, Writing – original draft)
1
Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST)
, 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
Search for other works by this author on:
Junhwan Choi
;
Junhwan Choi
(Conceptualization, Writing – original draft)
2
Department of Chemical Engineering, Dankook University
, 152 Jukjeon-ro, Suji-gu, Yongin, Gyeonggi-do 16890, Republic of Korea
Search for other works by this author on:
Changhyeon Lee
;
Changhyeon Lee
(Writing – original draft)
1
Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST)
, 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
Search for other works by this author on:
Hocheon Yoo
;
Hocheon Yoo
a)
(Conceptualization, Funding acquisition, Supervision, Writing – review & editing)
3
Department of Electronic Engineering, Gachon University
1342 Seongnam-daero, Sujeong-gu, Seongnam, Gyeonggi-do 13120, Republic of Korea
Search for other works by this author on:
Sung Gap Im
Sung Gap Im
a)
(Conceptualization, Funding acquisition, Supervision, Writing – review & editing)
1
Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST)
, 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
4
KAIST Institute for NanoCentury (KINC) Korea Advanced Institute of Science and Technology (KAIST)
, 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
Search for other works by this author on:
Appl. Phys. Rev. 11, 031317 (2024)
Article history
Received:
January 10 2024
Accepted:
July 17 2024
Citation
Chungryeol Lee, Junhwan Choi, Changhyeon Lee, Hocheon Yoo, Sung Gap Im; Exploring new logic devices: Unlocking potential with floating-gate transistor. Appl. Phys. Rev. 1 September 2024; 11 (3): 031317. https://doi.org/10.1063/5.0196918
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Pay-Per-View Access
$40.00
356
Views
Citing articles via
Continuous-variable quantum key distribution system: Past, present, and future
Yichen Zhang, Yiming Bian, et al.
Roadmap for focused ion beam technologies
Katja Höflich, Gerhard Hobler, et al.
Precise Fermi level engineering in a topological Weyl semimetal via fast ion implantation
Manasi Mandal, Abhijatmedhi Chotrattanapituk, et al.