Ti3C2Tx MXene as a representative material in the emerging two-dimensional (2D) MXene family with high conductivity, abundant functional surface terminals, and large layer spacing is supposed to show specific semiconducting properties like other 2D graphene or transition metal dichalcogenides, thus extending Moore's law beyond silicon. However, despite extensive efforts, the design of Ti3C2Tx MXene based semiconductor materials often depends on the availability of traditional semiconductors to form heterojunctions, where Ti3C2Tx MXene is still in metallic characters and is not in dominant status in the heterojunctions. Here, we demonstrate semiconducting Ti3C2Tx MXene modified with dodecyl (−C12H26) groups, as functionalized Ti3C2Tx MXene possesses opened and typical layer-dependent bandgap. The new arising characteristics, red-shift of characteristic peaks, and intensity ratio of the A1g(C)/A1g(Ti, C, Tx) in Raman spectroscopy suggested the successful grafting of the −C12H26 groups on the Ti3C2Tx MXenes. In addition, the theoretical calculations by density functional theory, photoluminescence spectrum, together with photoelectric measurements of Ti3C2Tx-C12H26 MXene on different layers, show a tunable bandgap of 0.49–2.15 eV and superior photoresponse properties in fabricating near infrared photodetectors.
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June 2023
Research Article|
April 03 2023
Functionalized Ti3C2Tx MXene with layer-dependent band gap for flexible NIR photodetectors
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Special Collection:
Flexible and Smart Electronics
Chuqiao Hu
;
Chuqiao Hu
(Data curation, Formal analysis, Investigation, Writing – original draft)
1
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences
, Beijing 100083, China
and Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences
, Beijing 100049, China
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Zhijian Du
;
Zhijian Du
(Data curation, Formal analysis)
2
School of Integrated Circuits and Electronics, Beijing Institute of Technology
, Beijing 100081, China
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Zhongming Wei
;
Zhongming Wei
(Resources, Writing – review & editing)
1
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences
, Beijing 100083, China
and Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences
, Beijing 100049, China
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La Li
;
La Li
a)
(Formal analysis, Investigation, Writing – original draft, Writing – review & editing)
2
School of Integrated Circuits and Electronics, Beijing Institute of Technology
, Beijing 100081, China
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Guozhen Shen
Guozhen Shen
a)
(Funding acquisition, Supervision, Writing – original draft, Writing – review & editing)
1
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences
, Beijing 100083, China
and Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences
, Beijing 100049, China
2
School of Integrated Circuits and Electronics, Beijing Institute of Technology
, Beijing 100081, China
Search for other works by this author on:
Chuqiao Hu
1
Zhijian Du
2
Zhongming Wei
1
La Li
2,a)
Guozhen Shen
1,2,a)
1
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences
, Beijing 100083, China
and Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences
, Beijing 100049, China
2
School of Integrated Circuits and Electronics, Beijing Institute of Technology
, Beijing 100081, China
Note: This paper is part of the special collection on Flexible and Smart Electronics.
Appl. Phys. Rev. 10, 021402 (2023)
Article history
Received:
December 31 2022
Accepted:
March 16 2023
Citation
Chuqiao Hu, Zhijian Du, Zhongming Wei, La Li, Guozhen Shen; Functionalized Ti3C2Tx MXene with layer-dependent band gap for flexible NIR photodetectors. Appl. Phys. Rev. 1 June 2023; 10 (2): 021402. https://doi.org/10.1063/5.0140861
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