In the last few years, organic–inorganic hybrid perovskites (OIHPs) have attracted immense research and industry attention for their application as light absorbers in solar cells and light-emitting diodes. Characterizing OIHP materials and optoelectronic devices using transmission electron microscopy (TEM)-based techniques has played a large role in understanding their structural, compositional, and electronic properties. However, the highly energetic and electrically charged electron beam radiation used in TEM can result in damage to the pristine structure, as OIHPs are unstable and highly sensitive to electron beams. This damage potentially obscures intrinsic information and leads to a serious misunderstanding of the microscopic structure–property–performance relationship for OIHP optoelectronic devices. To address this issue, we first review the electron and ion beam-induced degradation mechanism of OIHPs, followed by a review of the development of ultra-low-dose TEM techniques that can able to minimize this damage, thus can able to obtain reliable, intrinsic structural information about OIHPs from the atomic to micrometer length scales. Finally, we suggest a protocol for appropriate TEM specimen preparation and characterization techniques. This protocol can help ensure that future TEM studies of OIHPs give reliable information, thereby enabling a deeper understanding and optimization of the performance and long-term stability of OIHP optoelectronic devices.
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