The development of big data and artificial intelligence technology is increasing the need for electronic devices to become smaller, cheaper, and more energy efficient, while also having enhanced functionalities. However, the miniaturization of silicon chip technology is approaching its Moore's law (i.e., physical) limits. Thus, the application of three-dimensional integrated circuits (3D ICs), in which multiple chips are stacked vertically, provides the most achievable approach for the advancement of post-Moore electronics. In the recent decade, various key techniques have been developed for stacking chips vertically such as through-silicon vias, micro-bumps, low melting point tin–bismuth solders, redistribution layers, and copper-to-copper direct bonding. However, the need for high current densities in these structures results in severe Joule heating, making electromigration (EM) an increasingly challenging problem. This paper reviews studies on EM failures, mechanisms, and potential solutions for the key components of 3D IC packaging.
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June 2023
Review Article|
May 16 2023
Electromigration in three-dimensional integrated circuits
Zesheng Shen
;
Zesheng Shen
(Writing – original draft)
1
Department of System Engineering, City University of Hong Kong
, Hong Kong SAR, China
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Siyi Jing;
Siyi Jing
(Writing – original draft)
2
Department of Materials Science and Engineering, City University of Hong Kong
, Hong Kong SAR, China
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Yiyuan Heng
;
Yiyuan Heng
(Writing – original draft)
2
Department of Materials Science and Engineering, City University of Hong Kong
, Hong Kong SAR, China
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Yifan Yao
;
Yifan Yao
(Writing – original draft)
2
Department of Materials Science and Engineering, City University of Hong Kong
, Hong Kong SAR, China
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K. N. Tu
;
K. N. Tu
(Writing – review & editing)
1
Department of System Engineering, City University of Hong Kong
, Hong Kong SAR, China
2
Department of Materials Science and Engineering, City University of Hong Kong
, Hong Kong SAR, China
3
Department of Electrical Engineering, City University of Hong Kong
, Hong Kong SAR, China
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Yingxia Liu
Yingxia Liu
a)
(Writing – review & editing)
1
Department of System Engineering, City University of Hong Kong
, Hong Kong SAR, China
a)Author to whom correspondence should be addressed: yingxliu@cityu.edu.hk
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a)Author to whom correspondence should be addressed: yingxliu@cityu.edu.hk
Appl. Phys. Rev. 10, 021309 (2023)
Article history
Received:
December 22 2022
Accepted:
March 15 2023
Connected Content
A companion article has been published:
Addressing Electromigration Challenges in 3D Integrated Circuits
Citation
Zesheng Shen, Siyi Jing, Yiyuan Heng, Yifan Yao, K. N. Tu, Yingxia Liu; Electromigration in three-dimensional integrated circuits. Appl. Phys. Rev. 1 June 2023; 10 (2): 021309. https://doi.org/10.1063/5.0139658
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