Two-dimensional transition metal dichalcogenides (TMDs) are potential candidates for next generation channel materials owing to their atomically thin structure and high carrier mobility, which allow for the ultimate scaling of nanoelectronics. However, TMDs-based field-effect transistors are still far from delivering the expected performance, which is mainly attributed to their high contact resistance and low saturation velocity (vsat). In this work, we report high-performance short-channel WS2 transistors based on bandgap engineering. The bilayer WS2 channel not only shows a higher average field-effect mobility (μFE) than the monolayer channel but also exhibits excellent metal-Ohmic contact using a regular physical vapor deposition deposited Ni/Au contact, reducing the Rc value to a record low value of 0.38 kΩ · μm without any intentional doping. The bilayer WS2 device of the 80 nm channel exhibits a high on-state current of 346 μA/μm at Vds = 1 V, near-zero drain-induced barrier lowering, and a record high Ion/Ioff ratio over 109. Furthermore, a record high on-state current of 635 μA/μm at Vds = 1 V and a record high vsat of 3.8 × 106 cm/s have been achieved for a shorter 18 nm channel device, much higher than previous WS2 transistors. This work reveals the intrinsically robust nature of bilayer WS2 crystals with promising potential for integration with conventional fabrication processes.
Skip Nav Destination
Article navigation
March 2023
Research Article|
January 25 2023
Ultrashort channel chemical vapor deposited bilayer WS2 field-effect transistors
Xinhang Shi
;
Xinhang Shi
(Investigation)
1
Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology
, Wuhan 430074, China
Search for other works by this author on:
Xuefei Li
;
Xuefei Li
a)
(Investigation, Supervision, Writing – review & editing)
1
Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology
, Wuhan 430074, China
Search for other works by this author on:
Qi Guo
;
Qi Guo
(Investigation)
1
Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology
, Wuhan 430074, China
Search for other works by this author on:
Min Zeng
;
Min Zeng
(Investigation)
1
Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology
, Wuhan 430074, China
Search for other works by this author on:
Xin Wang;
Xin Wang
(Investigation)
1
Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology
, Wuhan 430074, China
Search for other works by this author on:
Yanqing Wu
Yanqing Wu
a)
(Supervision, Writing – review & editing)
1
Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology
, Wuhan 430074, China
2
School of Integrated Circuits, Peking University
, Beijing 100871, China
Search for other works by this author on:
Appl. Phys. Rev. 10, 011405 (2023)
Article history
Received:
August 08 2022
Accepted:
January 04 2023
Citation
Xinhang Shi, Xuefei Li, Qi Guo, Min Zeng, Xin Wang, Yanqing Wu; Ultrashort channel chemical vapor deposited bilayer WS2 field-effect transistors. Appl. Phys. Rev. 1 March 2023; 10 (1): 011405. https://doi.org/10.1063/5.0119375
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Pay-Per-View Access
$40.00
Citing articles via
Roadmap for focused ion beam technologies
Katja Höflich, Gerhard Hobler, et al.
Continuous-variable quantum key distribution system: Past, present, and future
Yichen Zhang, Yiming Bian, et al.
Sagnac interference in integrated photonics
Hamed Arianfard, Saulius Juodkazis, et al.
Related Content
Enhanced electrical performance in graphene field-effect transistors through post-annealing of high-k HfLaO gate dielectrics
APL Mater. (August 2024)
Spatio-temporal characterization of ultrashort vector pulses
APL Photonics (November 2021)
Spectrally tunable ultrashort monochromatized extreme ultraviolet pulses at 100 kHz
APL Photonics (May 2023)
Coherent staking of ultrashort laser pulses in coherent external Fabry-Pérot cavity
AIP Conf. Proc. (January 2020)
Study of the two-temperature heat transfer model in metal nanofilms exposed to ultrashort laser pulses
AIP Conf. Proc. (September 2020)