Dielectric capacitors are widely used in pulsed power electronic devices due to their ultrahigh power densities and extremely fast charge/discharge speed. To achieve enhanced energy storage density, maximum polarization (Pmax) and breakdown strength (Eb) need to be improved simultaneously. However, these two key parameters are inversely correlated. In this study, order–disorder transition induced polar nanoregions have been achieved in PbZrO3 thin films by making use of the low-energy ion implantation, enabling us to overcome the trade-off between high polarizability and breakdown strength, which leads to the tripling of the energy storage density from 20.5 to 62.3 J/cm3 as well as the great enhancement of breakdown strength. This approach could be extended to other dielectric oxides to improve the energy storage performance, providing a new pathway for tailoring the oxide functionalities.
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March 2023
Research Article|
January 05 2023
Tripling energy storage density through order–disorder transition induced polar nanoregions in PbZrO3 thin films by ion implantation
Special Collection:
Energy Storage and Conversion
Yongjian Luo
;
Yongjian Luo
(Investigation, Writing – original draft)
1
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University
, Guangzhou 510006, China
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Changan Wang
;
Changan Wang
(Methodology)
2
Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research
, Dresden 01328, Germany
3
Institute of Semiconductors, Guangdong Academy of Sciences
, Guangzhou 510650, China
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Chao Chen;
Chao Chen
(Investigation)
1
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University
, Guangzhou 510006, China
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Yuan Gao
;
Yuan Gao
(Investigation)
4
State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University
, Beijing 100871, China
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Fei Sun;
Fei Sun
(Methodology)
1
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University
, Guangzhou 510006, China
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Caiwen Li;
Caiwen Li
(Investigation)
1
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University
, Guangzhou 510006, China
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Xiaozhe Yin;
Xiaozhe Yin
(Investigation)
1
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University
, Guangzhou 510006, China
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Chunlai Luo;
Chunlai Luo
(Investigation)
1
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University
, Guangzhou 510006, China
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Ulrich Kentsch
;
Ulrich Kentsch
(Methodology)
2
Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research
, Dresden 01328, Germany
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Xiangbin Cai
;
Xiangbin Cai
(Methodology)
5
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University
, Singapore 637371, Singapore
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Mei Bai;
Mei Bai
(Investigation)
6
Frontier Institute of Science and Technology, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University
, Xi'an, 710049, China
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Zhen Fan
;
Zhen Fan
(Supervision)
1
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University
, Guangzhou 510006, China
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Minghui Qin
;
Minghui Qin
(Supervision)
1
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University
, Guangzhou 510006, China
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Min Zeng
;
Min Zeng
(Supervision)
1
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University
, Guangzhou 510006, China
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Jiyan Dai
;
Jiyan Dai
(Supervision)
7
Department of Applied Physics, The Hong Kong Polytechnic University
, Hung Hom, Kowloon, Hong Kong, China
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Guofu Zhou;
Guofu Zhou
(Supervision)
8
National Center for International Research on Green Optoelectronics, South China Normal University
, Guangzhou 510006, China
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Xubing Lu
;
Xubing Lu
(Supervision)
1
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University
, Guangzhou 510006, China
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Xiaojie Lou
;
Xiaojie Lou
(Supervision)
6
Frontier Institute of Science and Technology, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University
, Xi'an, 710049, China
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Shengqiang Zhou
;
Shengqiang Zhou
(Methodology, Supervision)
2
Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research
, Dresden 01328, Germany
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Xingsen Gao
;
Xingsen Gao
(Supervision)
1
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University
, Guangzhou 510006, China
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Deyang Chen
;
Deyang Chen
a)
(Funding acquisition, Investigation, Project administration, Supervision, Writing – original draft, Writing – review & editing)
1
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University
, Guangzhou 510006, China
a)Author to whom correspondence should be addressed: deyangchen@m.scnu.edu.cn
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Jun-Ming Liu
Jun-Ming Liu
(Supervision)
1
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University
, Guangzhou 510006, China
9
Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University
, Nanjing 210093, China
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a)Author to whom correspondence should be addressed: deyangchen@m.scnu.edu.cn
Note: This paper is part of the special collection on Energy Storage and Conversion.
Appl. Phys. Rev. 10, 011403 (2023)
Article history
Received:
June 13 2022
Accepted:
November 28 2022
Citation
Yongjian Luo, Changan Wang, Chao Chen, Yuan Gao, Fei Sun, Caiwen Li, Xiaozhe Yin, Chunlai Luo, Ulrich Kentsch, Xiangbin Cai, Mei Bai, Zhen Fan, Minghui Qin, Min Zeng, Jiyan Dai, Guofu Zhou, Xubing Lu, Xiaojie Lou, Shengqiang Zhou, Xingsen Gao, Deyang Chen, Jun-Ming Liu; Tripling energy storage density through order–disorder transition induced polar nanoregions in PbZrO3 thin films by ion implantation. Appl. Phys. Rev. 1 March 2023; 10 (1): 011403. https://doi.org/10.1063/5.0102882
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