Manipulation and control of traveling surface acoustic waves (SAWs) are critical to the realization of high-performance integrated acousto-optic modulators (AOMs). In this paper, we present the chalcogenide glass (ChG) acoustic reflector-loaded thin-film lithium niobate (TFLN) Mach–Zehnder interferometer (MZI) AOMs with single-arm and single-finger configurations based on the forming mechanism of the acoustic standing wave. Through the engineering of dielectric acoustic reflectors, threefold modulation efficiency improvement is achieved for the TFLN MZI AOM with X–Z orientation, while twofold bandwidth extension is demonstrated for the counterpart with X–30°Y orientation. Propagation loss of the Rayleigh SAW around 0.85 GHz and the reflection coefficient of ChG acoustic grating are measured to be 3.04 dB/mm and 0.34, respectively. Introduction of dielectric acoustic reflectors opens a new pathway to the study of efficient and wideband acousto-optic interaction devices.

With the development of advanced photonic integrated circuits (PICs),1–6 integrated acousto-optic devices as an emerging branch have been accordingly demonstrated using opto-mechanical–electrical properties of the planar waveguide media.7,8 Representative acousto-optic modulators (AOMs) exhibit strong manipulation capabilities for both photons and phonons, resulting in integrated acousto-optic frequency shifters (AOFSs), deflectors,9,10 switches, isolators,11,12 filters,13 converters,14 and so on. Surface acoustic waves (SAWs) excited by an interdigital transducer (IDT) are utilized to accomplish the acousto-optic interactions in AOMs. To control and enhance acousto-optic interactions, the engineering of acoustic wave propagation as a key technique is continually concerned combining with the physical properties of piezoelectric materials and waveguide configurations.

Advancements in thin-film piezoelectric material fabrication technologies have led to the rise of integrated AOMs using various waveguide platforms, such as lithium niobate (LN),14,15 aluminum nitride (AlN),16,17 aluminum scandium nitride (AlScN),18 and gallium nitride (GaN).19 Thin-film lithium niobate (TFLN) as an attractive medium has been proven to be an ideal waveguide platform for fabricating high-efficiency, low-loss AOMs in qubit transduction, microwave-to-optical conversion, and frequency manipulation due to its favorable piezoelectric and photoelastic advantages.10,20–24 Limited by the low optomechanical and electromechanical coupling coefficients, weak acousto-optic modulation efficiency and narrow-bandwidth modulation characteristics have become both critical bottlenecks for pushing integrated TFLN AOMs into practical stage. To address the aforementioned problems, some acoustic cavities are commonly adopted to increase acousto-optic interaction in previous studies.25,26 A conventional acoustic cavity is composed of metal reflectors or suspended membrane.11,27 However, the precise fabrication of narrow-linewidth metal reflectors needs stringent process control, bringing great challenges for the large-scale applications of the metal reflectors. Similarly, the introduction of the suspended acoustic resonator also faces the complex fabrication recipe, meanwhile the modulation bandwidth of the device could be seriously decreased. Therefore, how to increase the modulation bandwidth under a single-finger IDT configuration while maintaining appropriate modulation efficiency on a non-suspended waveguide platform is worth pursuing for improving the stability and practicability of integrated TFLN AOMs.

Giving that the chalcogenide glass (ChG) has high mechanical reflectivity, large photoelastic coefficient, and low acoustic velocity, ChG waveguides combining with the hybrid-integration TFLN are expected to show excellent acoustic characteristics.28,29 In this paper, we propose and experimentally demonstrate efficient and wideband Mach–Zehnder interferometer (MZI) AOMs based on the dielectric acoustic reflectors and non-suspended TFLN–ChG hybrid waveguides. The loss and reflection characteristics of the Rayleigh SAW over the ChG-LN hybrid waveguide platform are investigated. Periodic ChG acoustic gratings are carefully designed to reflect specific acoustic waves within the acoustic band along the different propagation orientations to engineer modulation performance of the single-arm MZI AOMs. Compared with counterparts without acoustic reflectors, the modulation efficiency of one device with acoustic reflectors is enhanced under the X–Z orientation, while the modulation bandwidth of the other X–30°Y device is broadened. Demonstration of ChG acoustic reflectors thus provides new solutions for the flexible control and manipulation of acoustic wave propagation in integrated acousto-optics.

The schematic diagram of the proposed dielectric acoustic reflector-engineered MZI AOM is shown in Fig. 1(a). The AOM consists of a hybrid MZI, a pair of ChG acoustic reflectors, and a single-finger IDT on non-suspended TFLN–ChG hybrid waveguide platform. Acoustic reflectors are located on both sides of an IDT to confine acoustic waves. An 850 nm-thick (H) Ge25Sb10S65 (one of the ChGs) film is deposited on the X-cut TFLN with a thickness of 400 nm to form the hybrid MZI. The hybrid MZI ridge waveguide is made of the ChG rectangular waveguide and a TFLN slab. The Rayleigh SAWs are excited by an IDT at an angle θ relative to the crystal Y axis to explore the propagation behaviors of acoustic waves. The width of the ChG rectangular waveguide is set to be 1.6 μm (W), which matches the half acoustic wave's wavelength (Λ = 3.2 μm) for maximum acousto-optic overlap. The refractive indices of amorphous ChG and anisotropic LN are set to be n = 2.273 and ne = 2.13 (no = 2.2) at 1550 nm, respectively. The stresses resulting from the SAWs will deform the hybrid waveguide, leading to a change in the refractive index of the supported fundamental transverse electric mode (TE00), as shown in Fig. 1(b).

FIG. 1.

Design of single-arm MZI AOM. (a) Schematic diagram of the dielectric acoustic reflector-engineered MZI AOM based on the non-suspended ChG loaded TFLN waveguide platform. (b) Normalized electrical field of the fundamental TE mode in the hybrid waveguide. (c) Evolution of the effective electromechanical coupling coefficients with the variations of acoustic wave orientations on the X-cut TFLN. (d) Phonon bands of the dielectric acoustic reflector with X–Z orientation. (e) Normalized displacement fields of the anti-symmetric and symmetric acoustic modes of a unit acoustic reflector. (f) Normalized displacement field of an acoustic standing wave formed between one side of the IDT and reflectors with X–Z orientation.

FIG. 1.

Design of single-arm MZI AOM. (a) Schematic diagram of the dielectric acoustic reflector-engineered MZI AOM based on the non-suspended ChG loaded TFLN waveguide platform. (b) Normalized electrical field of the fundamental TE mode in the hybrid waveguide. (c) Evolution of the effective electromechanical coupling coefficients with the variations of acoustic wave orientations on the X-cut TFLN. (d) Phonon bands of the dielectric acoustic reflector with X–Z orientation. (e) Normalized displacement fields of the anti-symmetric and symmetric acoustic modes of a unit acoustic reflector. (f) Normalized displacement field of an acoustic standing wave formed between one side of the IDT and reflectors with X–Z orientation.

Close modal
The modulation efficiency and bandwidth of a TFLN AOM are closely related to the electromechanical coupling coefficient k2 eff, which characterizes the generation ability of acoustic waves over the different piezoelectric materials. The variations of k2 eff as a function of the propagation orientation θ of the SAW over the X-cut TFLN are theoretically calculated with 36 data points according to the series (fs) and parallel (fp) resonance frequencies in Eq. (1),30 as plotted in Fig. 1(c). Herein, we demonstrate two types of AOMs. Device A is oriented along the X–Z (θ = 90°) with a coupling coefficient of 0.51%. Device B has an X–30°Y (θ = 30°) orientation with a coupling coefficient of 4.7%, which is beneficial for wideband modulation. Due to strong acousto-optic interaction under the X–Z orientation,29 device A is designed to realize a modulation efficiency-enhanced AOM using one optimized acoustic reflector. Meanwhile, device B is designed to showcase the bandwidth expansion with the other X–30°Y acoustic reflectors. To explore the band of reflectors, we simulate the phonon bands of a unit acoustic grating along the X–Z orientation, as shown in Fig. 1(d). The bandgap is formed between the anti-symmetric and symmetric SAW modes to manipulate the reflection of acoustic waves, as presented in Fig. 1(e). The band varies upon the geometries and orientations of acoustic reflectors. To enhance the amplitude of a SAW within the optical waveguide, the acoustic reflector-derived standing wave is excited through optimizing the geometry and relative position of an acoustic grating. Figure 1(f) shows the normalized displacement field of an acoustic standing wave formed between one side of the IDT and the reflectors, which is obtained from the 2-dimensional finite element simulation corresponding to device A. The width of reflectors in device A (device B) is designed to be 1.2 μm (1.15 μm), and the gap between the adjacent reflectors is 1.1 μm (0.95 μm). It is apparent that the SAW is strongly reflected by the first three ChG acoustic gratings, resulting in the optical waveguide located at the anti-node of a standing wave and enhanced acousto-optic interaction. Increasing reflection units beyond the six has nearly no effect on the propagation and formation of excited acoustic standing waves,
(1)

To rigorously verify the effects of the dielectric acoustic reflectors in the engineering of single-arm MZI AOMs, both IDT configurations with and without acoustic reflectors are integrated on the same MZI waveguide, as shown in Fig. 2(a). The primary purpose of the configuration is to contrast their modulation performance. The detailed fabrication processes are illustrated in our previous study.29 The integrated AOM is characterized using a heterodyne detection setup, as shown in Fig. 2(b). In this setup, light emitted from a tunable laser (Santec, TSL-570) is split into 99:1 with a coupler to generate a signal light and a reference light. The signal light is coupled into the device under test via a lens fiber with a mode field diameter of 3 μm. A fiber polarization controller is employed to adjust the fundamental TE mode into the waveguide. The vector network analyzer (Keysight, N5231B) interfaces with the IDT via port 1 to excite the SAW. The output light generated from the device is converted into an electrical signal through a photodiode, thereafter being detected by port 2 of the vector network analyzer to observe the RF transmittance spectrum (S21). The reference light is coupled into an acousto-optic frequency shifter with a 120 MHz offset to enable the heterodyne detection via a photodiode with a responsivity of 450 V/W. The RF sideband spectra are measured using an electrical signal analyzer (Agilent, N9010A).

FIG. 2.

Device fabrication and characterization. (a) Partial optical microscope image and a zoomed-in view of a dielectric acoustic reflector-engineered MZI AOM with an acousto-optic interaction region. Inside the dashed box is the corresponding scanning electron microscope image of the acoustic grating area. (b) Measurement setup of an integrated MZI AOM. TL: tunable laser, PC: polarization controller, VNA: vector network analyzer, DUT: device under test, PD: photodiode, AOFS: acousto-optic frequency shifter, PM: powermeter, and ESA: electrical spectrum analyzer.

FIG. 2.

Device fabrication and characterization. (a) Partial optical microscope image and a zoomed-in view of a dielectric acoustic reflector-engineered MZI AOM with an acousto-optic interaction region. Inside the dashed box is the corresponding scanning electron microscope image of the acoustic grating area. (b) Measurement setup of an integrated MZI AOM. TL: tunable laser, PC: polarization controller, VNA: vector network analyzer, DUT: device under test, PD: photodiode, AOFS: acousto-optic frequency shifter, PM: powermeter, and ESA: electrical spectrum analyzer.

Close modal

Before conducting the measurements of the AOMs, we design experiments to explore the propagation behaviors of the Rayleigh SAW excited using an IDT, and the results are shown in Fig. 3. By measuring reflection (S11) and transmittance (S21) spectra of the SAWs over the X–Z TFLN, as presented in Fig. 3(a), it could be seen that there are two main acoustic modes with resonance frequencies of 0.857 and 0.899 GHz in the range of 1 GHz, corresponding to the Rayleigh and shear modes, respectively. By performing the inverse Fourier transform for the S21 spectrum, the system response |h| of the IDT group with a spacing of 500 μm is obtained, as shown in Fig. 3(b). Through linear fitting, the propagation loss of the Rayleigh SAW is determined to be 3.04 dB/mm. The propagation velocity of the Rayleigh SAW is calculated to be 2857 m/s; the detailed method can be obtained in Ref. 31.

FIG. 3.

Analysis of transmission characteristics of the SAWs. (a) S11 and S21 spectra of SAWs on X–Z TFLN. (b) Time domain response corresponding to the (a) configuration. (c) S11 and S21 spectra of SAWs on X–Z TFLN with an inserted ChG waveguide. (d) S11 and S21 spectra of SAWs on X–Z TFLN with an inserted ChG waveguide and 15 acoustic gratings at the different configurations. The insets correspond to schematic diagrams of SAW devices.

FIG. 3.

Analysis of transmission characteristics of the SAWs. (a) S11 and S21 spectra of SAWs on X–Z TFLN. (b) Time domain response corresponding to the (a) configuration. (c) S11 and S21 spectra of SAWs on X–Z TFLN with an inserted ChG waveguide. (d) S11 and S21 spectra of SAWs on X–Z TFLN with an inserted ChG waveguide and 15 acoustic gratings at the different configurations. The insets correspond to schematic diagrams of SAW devices.

Close modal

To quantitatively estimate the reflection characteristics of the ChG waveguides for the SAWs, a rectangular ChG waveguide with a width of 1.6 μm is first placed between both IDTs, and the S21 spectrum is characterized based on the same TFLN platform and IDT configurations, as shown in Fig. 3(c). The introduction of the ChG modulation waveguide alleviates the vibrations in the S21 spectrum resulting from the round trip SAW interference in Fig. 3(a). Subsequently, the ChG acoustic gratings with 15 periods are put on one side of the waveguide to influence SAWs through observing the variation of the S21 spectrum, as shown in Fig. 3(d). It could be clearly seen that the variation of S21 is small for an improper ChG acoustic reflector (w = 0.9 μm, gap = 1 μm). For a proper configuration (w = 0.9 μm, gap = 1.1 μm), serious reduction in S21 is observed. Finally, through the optimization, the S21 of SAWs significantly decreased by 20 dB because the corresponding Rayleigh SAWs are obviously reflected in comparison with the case of Fig. 3(c). Of course, a small part of acoustic energy is attenuated. However, the shear mode at 0.899 GHz outside the bandgap is nearly unaffected. The difference between the two S21 lies in whether they pass through the reflectors, and the average loss induced by a unit acoustic grating is calculated to be 1.33 dB. Then the reflection coefficient of the ChG acoustic grating is nearly calculated to be 0.34, as described in the  Appendix, approaching the reflection coefficients of some common metal gratings (e.g., aluminum ∼0.32 and gold ∼0.46).32–34 Therefore, the configuration of the dielectric acoustic grating is helpful to adjust and control the performance of an integrated MZI AOM.

To demonstrate the effect of the dielectric acoustic reflectors on the modulation efficiency, we measure the modulation characteristics of both single-arm X–Z MZI AOMs (device A) with and without acoustic reflectors, which are presented in Fig. 4. Compared with the configuration without acoustic reflectors [see Fig. 4(a)], the device featuring reflectors manifests a nearly 10 dB improvement in S21 (from −65.1 to −55.5 dB) at an acoustic frequency of 0.841 GHz under the RF power of 0 dBm [see Fig. 4(b)]. At the acoustic frequency of 0.845 GHz, the value of S21 has slight reduction due to energy distribution changes caused by acoustic reflectors (as shown in S11 spectra). The bias point of device A is chosen at 1560.58 nm (−21.27 dBm), and the modulation length is designed to be 120 μm. Utilizing these data and formula in Ref. 29, the half-wave-voltage Vπ is thus extracted to be 6.3 V (18.9 V) for the device A with acoustic reflectors (without acoustic reflectors), and the corresponding half-wave-voltage-length product VπL is calculated to be 0.075 V cm (0.22 V cm). Repeatable measurement results are shown in Table I. These results indicate that the configuration with reflectors obtains a twofold enhancement in modulation efficiency. The enhancement can be attributed to the strong reflection of acoustic waves within the bandgap and standing wave oscillation in the acoustic cavity.

FIG. 4.

Comparison of the modulation characteristics of device A under both configurations. Acoustic S11 and opto-acoustic S21 spectra of device A are shown in (a) (without reflectors) and (b) (with reflectors). The insets show zoomed-in areas marked by the dashed line boxes. (c) Measured RF sidebands of device A using a heterodyne detection setup. (d) Variations of intensities of the anti-stokes RF sideband at the different RF input powers.

FIG. 4.

Comparison of the modulation characteristics of device A under both configurations. Acoustic S11 and opto-acoustic S21 spectra of device A are shown in (a) (without reflectors) and (b) (with reflectors). The insets show zoomed-in areas marked by the dashed line boxes. (c) Measured RF sidebands of device A using a heterodyne detection setup. (d) Variations of intensities of the anti-stokes RF sideband at the different RF input powers.

Close modal
TABLE I.

Repeatability of measurement results of devices with acoustic reflectors.

Number of testsS21 (dB)Irec (dBm)Vπ (V)VπL (V cm)
No. 1_1st −57.15 −19.45 6.2 0.074 
No. 2_2nd −55.92 −21.27 6.6 0.079 
No. 2_3rd −55.53 −21.273 6.3 0.075 
Number of testsS21 (dB)Irec (dBm)Vπ (V)VπL (V cm)
No. 1_1st −57.15 −19.45 6.2 0.074 
No. 2_2nd −55.92 −21.27 6.6 0.079 
No. 2_3rd −55.53 −21.273 6.3 0.075 

To further reveal the difference of modulation characteristics of both configurations, we observe the evolutions of RF sidebands of the device using a heterodyne detection setup, as shown in Fig. 4(c). When the RF power is 15 dBm, up to second-order RF sidebands could be acquired for device A with acoustic reflectors. For device A without acoustic reflectors, only one-order RF sidebands could be obtained. We also explore the variations of intensities of the generated one-order RF sideband (anti-stokes signal) with RF power increased from −5 to 15 dBm for both configurations. The almost linear dependence indicates that the magnitude of the RF sideband is proportional to the amplitude of the acoustic wave. Crucially, the configuration with acoustic reflectors exhibits a superior modulation efficiency compared to that without reflectors as the RF power increases.

The introduction of dielectric acoustic reflectors can not only enhance the modulation efficiency of a MZI AOM but can also expand the modulation bandwidth of a device. To verify this point, we design a ChG acoustic grating-loaded single-arm MZI AOM (device B) with X–30°Y orientation aiming to explore the evolution of modulation bandwidth. Figures 5(a) and 5(b) show the acoustic S11 and opto-acoustic S21 spectra of device B under the configurations without and with acoustic reflectors, respectively. Different from the acoustic S11 of device A, device B presents many more acoustic modes within the range from 0.822 to 0.9 GHz, corresponding to the diverse peaks in opto-acoustic S21. Through estimating the profile of peaks in S21 spectra, the 3 dB bandwidth of device B is increased from 11.8 to 20.5 MHz (fractional BW of 2.45%) with the help of the acoustic reflectors, as shown in Figs. 5(a1) and 5(b1). Herein, the 3 dB bandwidth is defined as the frequency interval at half maximum, referring to Ref. 35. It could be observed that modulation abilities of the partial acoustic modes around the center resonance frequency (0.838 GHz) in S11 are enhanced, while some new acoustic modes are excited by the acoustic cavity to participate in the modulation. To clearly clarify the modulation mechanism, we analyze the evolutions of admittances corresponding to the acoustic S11 spectra of device B under both configurations, as shown in Fig. 5(c). Obvious fluctuations in admittance Y11 spectra verify the variations of parasitic modes within the acoustic bandgap that is induced using the acoustic reflectors. The presence of acoustic reflectors thus expands the bandwidth of device B, which is also demonstrated by the comparable RF sidebands measured at the four different S21 peaks under the RF power of 15 dBm [see Fig. 5(d)].

FIG. 5.

Comparison of the modulation characteristics of device B under both configurations. Acoustic S11 and opto-acoustic S21 spectra of device B are shown in (a) (without reflectors) and (b) (with reflectors). (a1) and (b1) show the zoomed-in areas marked by the dashed line boxes in (a) and (b). (c) Comparison of the admittance Y11 spectra of device B under both configurations. (d) Measured RF sidebands spectra at the four different acoustic frequencies corresponding to device B with reflectors.

FIG. 5.

Comparison of the modulation characteristics of device B under both configurations. Acoustic S11 and opto-acoustic S21 spectra of device B are shown in (a) (without reflectors) and (b) (with reflectors). (a1) and (b1) show the zoomed-in areas marked by the dashed line boxes in (a) and (b). (c) Comparison of the admittance Y11 spectra of device B under both configurations. (d) Measured RF sidebands spectra at the four different acoustic frequencies corresponding to device B with reflectors.

Close modal

Table II presents a comparative analysis of our acoustic reflector-engineered single-arm MZI AOMs with single-finger IDTs based on the non-suspended TFLN–ChG hybrid waveguides, against existing mainstream TFLN MZI AOMs. Compared with the MZI AOMs with metal reflectors,26,27 device A exhibits superior VπL up to 0.07 V cm, which is attributed to the creation of acoustic standing wave and increased amplitude of strain around the modulation waveguide. Although the introduction of a suspended acoustic cavity could significantly improve the VπL of the device in Ref. 7, the bandwidth (BW) of the device is distinctly compressed, as demonstrated in our previous study.29 Based on the choice of ChG acoustic reflectors, the BW of device B is broadened to 20.5 MHz in our work, while the VπL of device B is maintained at a suitable level. Given that there is a trade-off between the BW and VπL, BW divided by VπL as a figure-of-merit (FOM) is defined to estimate the modulation performance of a device. As shown in Table II, the FOMs of our proposed device A and device B with acoustic reflectors are calculated to be 41.3 and 89.1, respectively, verifying the good modulation characteristics of the proposed TFLN MZI AOMs under the single-arm and single-finger configurations. Of course, to further increase the BW of a device, a split IDT or a chirped IDT is preferred to manipulate the propagation of acoustic waves in combination with the engineering of acoustic reflectors. In addition, narrow-linewidth IDT is also pursued to increase the modulation rate of a device. Therefore, the introduction of the dielectric acoustic reflectors provides a new pathway to the development of efficient and wideband AOMs integrated on chip.

TABLE II.

Comparison of modulation merits of TFLN MZI AOMs with single-finger IDTs.

References/DeviceFrequency (GHz)Bandwidth (MHz)Qαp (rad/√mW)Lmod (μm)αp/Lmod [rad/(√mW mm)]VπL (V cm)Mismatch efficiency (%)BW(VπL)−1 [MHz·(V cm)−1]
7a 3.27 3600 0.27 100 2.7 0.046 64 19.6 
26a 0.11 0.09 1200 0.26 2400 0.11 0.94 95 0.09 
27a 0.11 0.062 1800 0.073 1200 0.061 2.5 42 0.02 
29  0.84 5.7 384 0.12 120 0.1 98 57 
Aa 0.841 3.1 302 0.161 120 1.34 0.075 80 41.3 
Ba 0.844 20.5 844 0.06 120 0.5 0.23 82 89.1 
References/DeviceFrequency (GHz)Bandwidth (MHz)Qαp (rad/√mW)Lmod (μm)αp/Lmod [rad/(√mW mm)]VπL (V cm)Mismatch efficiency (%)BW(VπL)−1 [MHz·(V cm)−1]
7a 3.27 3600 0.27 100 2.7 0.046 64 19.6 
26a 0.11 0.09 1200 0.26 2400 0.11 0.94 95 0.09 
27a 0.11 0.062 1800 0.073 1200 0.061 2.5 42 0.02 
29  0.84 5.7 384 0.12 120 0.1 98 57 
Aa 0.841 3.1 302 0.161 120 1.34 0.075 80 41.3 
Ba 0.844 20.5 844 0.06 120 0.5 0.23 82 89.1 
a

Devices with acoustic cavities.

The material type for Refs. 7 and 27 is LN. For Ref. 26, it is As2S3/LN. For Ref. 29 and this work, it is Ge25Sb10S65/LN.

In conclusion, we propose and demonstrate dielectric acoustic reflector-engineered MZI AOMs with single-arm configurations based on the non-suspended TFLN–ChG hybrid waveguide platform, which efficiently reveals the reflection mechanism and control capability of ChG acoustic gratings for the SAWs excited by the single-finger IDTs. Through the engineering of ChG acoustic reflectors, the VπL of device A is improved from 0.22 to 0.075 V cm, while the BW of device B is increased from 11.8 to 20.5 MHz. The propagation loss of traveling Rayleigh SAW near 0.85 GHz is estimated to be to be 3.04 dB/mm, and the propagation velocity of the Rayleigh SAW in the experiments is confirmed to be 2857 m/s. The reflection coefficient of the ChG acoustic grating is nearly demonstrated to be 0.34. These experimental results render the current devices appealing for future work in the development of high-performance acousto-optic devices, such as efficient and wideband AOMs, non-reciprocal photonic devices based on the stimulated Brillouin scattering, and qubit transduction devices.

This work was supported by the National Natural Science Foundation of China (Grant Nos. 62175095, 62335014, and 12134009), the Science Fund for Distinguished Young Scholars of Ningxia (Grant No. 2024AAC04003), the Natural Science Foundation of Ningxia (Grant No. 2022AAC03239), the Key Research and Development Program of Ningxia (Grant No. 2024BEH04093), the Open Project of State Key Laboratory of Photonics and Communications in Shanghai Jiao Tong University (Grant No. 2024GZKF002).

The authors have no conflicts to disclose.

Huilong Liu and Jiying Huang contributed equally to this work.

Huilong Liu: Investigation (equal). Jiying Huang: Investigation (equal); Writing – original draft (equal). Jiantao Jiang: Methodology (supporting). Hongyi Huang: Methodology (supporting). Huipeng Chen: Methodology (supporting). Chengyu Chen: Methodology (supporting). Haiwei La: Methodology (supporting). Huan Li: Data curation (supporting). Xiaochun Xu: Data curation (supporting). Yuping Chen: Supervision (equal). Zhaohui Li: Supervision (equal). Lei Wan: Project administration (equal); Supervision (equal); Writing – review & editing (equal).

The data that support the findings of this study are available from the corresponding authors upon reasonable request.

A. Establishment of dielectric acoustic reflector model

To analyze the propagation characteristics of SAWs in the reflector area, we adopt the following physical model, as shown in Fig. 6. Herein, R1, R2, β1, and β2 represent the acoustical impedance and wave number in different regions, respectively. Ain is the amplitude of the input SAW. Due to the discontinuous acoustic impedances, the acoustic wave will be reflected on both sides of a waveguide. The amplitude of the SAW reflected on the left side of the unit reflection grating is A (blue arrow) and on the right side is A+ (yellow arrow). They could be determined by the following formulas:
(A1)
where Γ and Γ+ represent the reflection coefficients of the left and right sides, respectively.
FIG. 6.

Schematic diagram of the ChG acoustic reflectors over lithium niobate on the insulator platform.

FIG. 6.

Schematic diagram of the ChG acoustic reflectors over lithium niobate on the insulator platform.

Close modal

B. Derivation of reflection coefficient: Γ

In our calculation, the group velocity of the Rayleigh SAW could be obtained by the finite element simulation. Therefore, we first simulate the phonon bands of TFLN and ChG–TFLN double layer films, respectively, as shown in Fig. 7. For the Rayleigh SAW modes (denoted by the green and red lines), the evolutions of phonon bands could be regarded as a linear curve around 0.84 GHz. By estimating the variations of the linear curves within a small range, the simulated SAW group velocity vg_ChG = 1976 m/s and vg_TFLN = 2714.6 m/s (experimental result vg_TFLN_exp = 2857 m/s) could be extracted from formula (A2). Then, the reflection coefficient of the ChG acoustic grating is calculated to be Γ = 0.34, combining formula (A3) and the experimental result. Herein, the acoustic impedance R = ρvg. The densities of the LN and ChG are 4628 and 3210 kg/m3, respectively.
(A2)
(A3)
FIG. 7.

Phonon bands of the TFLN and ChG–TFLN double layer films are shown in (a) and (b). The green and red curves correspond to the Rayleigh SAW modes in both configurations.

FIG. 7.

Phonon bands of the TFLN and ChG–TFLN double layer films are shown in (a) and (b). The green and red curves correspond to the Rayleigh SAW modes in both configurations.

Close modal
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