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Perspective: New process technologies required for future devices and scaling
LETTERS
Synthesis and electronic properties of Fe2TiO5 epitaxial thin films
APL Mater. 6, 056101 (2018)
https://doi.org/10.1063/1.5025569
Spontaneous Hall effects in the electron system at the SmTiO3/EuTiO3 interface
APL Mater. 6, 056102 (2018)
https://doi.org/10.1063/1.5025169
Less severe processing improves carbon nanotube photovoltaic performance
APL Mater. 6, 056104 (2018)
https://doi.org/10.1063/1.5026853
Carrier density control of magnetism and Berry phases in doped EuTiO3
APL Mater. 6, 056105 (2018)
https://doi.org/10.1063/1.5025317
SPECIAL TOPIC: MATERIALS, METROLOGY, AND MODELING FOR A FUTURE BEYOND CMOS TECHNOLOGY
Preface for SPECIAL TOPIC: Materials, Metrology, and Modeling for a Future Beyond CMOS Technology
Preface: Materials, metrology, and modeling for a future beyond CMOS technology
In Special Collection:
Materials, Metrology, and Modeling for a Future Beyond CMOS Technology
APL Mater. 6, 058001 (2018)
https://doi.org/10.1063/1.5037331
Invited Research Updates
Invited Perspectives
Perspective: Optical measurement of feature dimensions and shapes by scatterometry
In Special Collection:
Materials, Metrology, and Modeling for a Future Beyond CMOS Technology
APL Mater. 6, 058201 (2018)
https://doi.org/10.1063/1.5018310
Perspective: 2D for beyond CMOS
In Special Collection:
Materials, Metrology, and Modeling for a Future Beyond CMOS Technology
APL Mater. 6, 058202 (2018)
https://doi.org/10.1063/1.5022769
Perspective: New process technologies required for future devices and scaling
In Special Collection:
Materials, Metrology, and Modeling for a Future Beyond CMOS Technology
APL Mater. 6, 058203 (2018)
https://doi.org/10.1063/1.5026805
Invited Letters
Relation between film thickness and surface doping of MoS2 based field effect transistors
In Special Collection:
Materials, Metrology, and Modeling for a Future Beyond CMOS Technology
APL Mater. 6, 058301 (2018)
https://doi.org/10.1063/1.4996425
Thermal conductivity and thermal boundary resistance of atomic layer deposited high-k dielectric aluminum oxide, hafnium oxide, and titanium oxide thin films on silicon
In Special Collection:
Materials, Metrology, and Modeling for a Future Beyond CMOS Technology
APL Mater. 6, 058302 (2018)
https://doi.org/10.1063/1.5021044
Contributed Letters
In-line metrology for roll-to-roll UV assisted nanoimprint lithography using diffractometry
In Special Collection:
Materials, Metrology, and Modeling for a Future Beyond CMOS Technology
APL Mater. 6, 058502 (2018)
https://doi.org/10.1063/1.5011740
A graphene integrated highly transparent resistive switching memory device
In Special Collection:
Materials, Metrology, and Modeling for a Future Beyond CMOS Technology
APL Mater. 6, 058503 (2018)
https://doi.org/10.1063/1.5021099
Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium
In Special Collection:
Materials, Metrology, and Modeling for a Future Beyond CMOS Technology
APL Mater. 6, 058504 (2018)
https://doi.org/10.1063/1.5022876
