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Issues
1 August 2011
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
O-band excited state quantum dot bilayer lasers
Appl. Phys. Lett. 99, 051101 (2011)
https://doi.org/10.1063/1.3605590
Room temperature spin relaxation length in spin light-emitting diodes
Henning Soldat; Mingyuan Li; Nils C. Gerhardt; Martin R. Hofmann; Arne Ludwig; Astrid Ebbing; Dirk Reuter; Andreas D. Wieck; Frank Stromberg; Werner Keune; Heiko Wende
Appl. Phys. Lett. 99, 051102 (2011)
https://doi.org/10.1063/1.3622662
On the optical polarization properties of semipolar InGaN quantum wells
Appl. Phys. Lett. 99, 051103 (2011)
https://doi.org/10.1063/1.3618676
1 × 12 Unequally spaced waveguide array for actively tuned optical phased array on a silicon nanomembrane
Appl. Phys. Lett. 99, 051104 (2011)
https://doi.org/10.1063/1.3619847
A microfiber cavity with minimal-volume confinement
Appl. Phys. Lett. 99, 051105 (2011)
https://doi.org/10.1063/1.3621836
Ultralow power all-optical diode in photonic crystal heterostructures with broken spatial inversion symmetry
Appl. Phys. Lett. 99, 051107 (2011)
https://doi.org/10.1063/1.3617433
Subwavelength lateral confinement of microwave surface waves
Appl. Phys. Lett. 99, 051108 (2011)
https://doi.org/10.1063/1.3622646
High optical polarization ratio from semipolar () blue-green InGaN/GaN light-emitting diodes
Yuji Zhao; Shinichi Tanaka; Qimin Yan; Chia-Yen Huang; Roy B. Chung; Chih-Chien Pan; Kenji Fujito; Daniel Feezell; Chris G. Van de Walle; James S. Speck; Steven P. DenBaars; Shuji Nakamura
Appl. Phys. Lett. 99, 051109 (2011)
https://doi.org/10.1063/1.3619826
Strong coupling between surface plasmon polariton and laser dye rhodamine 800
Appl. Phys. Lett. 99, 051110 (2011)
https://doi.org/10.1063/1.3619845
Angular emission properties of a layer of rare-earth based nanophosphors embedded in one-dimensional photonic crystal coatings
O. Sánchez-Sobrado; A. M. Yacomotti; M. E. Calvo; O. E. Martínez; M. Ocaña; N. Núñez; J. A. Levenson; H. Míguez
Appl. Phys. Lett. 99, 051111 (2011)
https://doi.org/10.1063/1.3619814
The methods to detect vacuum polarization by evanescent modes
Appl. Phys. Lett. 99, 051112 (2011)
https://doi.org/10.1063/1.3617421
PLASMAS AND ELECTRICAL DISCHARGES
MeV negative ion generation from ultra-intense laser interaction with a water spray
S. Ter-Avetisyan; B. Ramakrishna; M. Borghesi; D. Doria; M. Zepf; G. Sarri; L. Ehrentraut; A. Andreev; P. V. Nickles; S. Steinke; W. Sandner; M. Schnürer; V. Tikhonchuk
Appl. Phys. Lett. 99, 051501 (2011)
https://doi.org/10.1063/1.3622664
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
Collateral evidence for an excellent radiative performance of AlxGa1−xN alloy films of high AlN mole fractions
Appl. Phys. Lett. 99, 051902 (2011)
https://doi.org/10.1063/1.3615681
Stress changed damping and associated transforming behavior in a Ti48.5Ni51.5 strain glass
Appl. Phys. Lett. 99, 051905 (2011)
https://doi.org/10.1063/1.3619830
Photoinduced mass-transport based holographic recording of surface relief gratings in amorphous selenium films
Appl. Phys. Lett. 99, 051906 (2011)
https://doi.org/10.1063/1.3614432
High frequency elastic losses in LaAlO3 and its importance for LaAlO3/SrTiO3 heterojunctions
Appl. Phys. Lett. 99, 051907 (2011)
https://doi.org/10.1063/1.3622305
Mo- and N-doped BiNbO4 for photocatalysis applications
Appl. Phys. Lett. 99, 051909 (2011)
https://doi.org/10.1063/1.3622659
73 mm-diameter bulk metallic glass rod by copper mould casting
Appl. Phys. Lett. 99, 051910 (2011)
https://doi.org/10.1063/1.3621862
Three dimensional distributions of arsenic and platinum within NiSi contact and gate of an n-type transistor
Appl. Phys. Lett. 99, 051911 (2011)
https://doi.org/10.1063/1.3616150
Response of graphene to femtosecond high-intensity laser irradiation
Adam Roberts; Daniel Cormode; Collin Reynolds; Ty Newhouse-Illige; Brian J. LeRoy; Arvinder S. Sandhu
Appl. Phys. Lett. 99, 051912 (2011)
https://doi.org/10.1063/1.3623760
Conducted growth of SrRuO3 nanodot arrays on self-ordered La0.18Sr0.82Al0.59Ta0.41O3(001) surfaces
Appl. Phys. Lett. 99, 051914 (2011)
https://doi.org/10.1063/1.3622140
Surface acoustic wave response to ambient humidity in graphite oxide structures
Appl. Phys. Lett. 99, 051915 (2011)
https://doi.org/10.1063/1.3624476
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
Sub-nm equivalent oxide thickness on Si-passivated GaAs capacitors with low Dit
M. El Kazzi; L. Czornomaz; D. J. Webb; C. Rossel; D. Caimi; H. Siegwart; J. Fompeyrine; C. Marchiori
Appl. Phys. Lett. 99, 052102 (2011)
https://doi.org/10.1063/1.3615680
Modulation of atomic-layer-deposited Al2O3 film passivation of silicon surface by rapid thermal processing
Appl. Phys. Lett. 99, 052103 (2011)
https://doi.org/10.1063/1.3616145
Three-dimensional PN junction capacitor for passive integration
Huijuan Wang; Lixi Wan; Daquan Yu; Daniel Guidotti; Ran He; Fengwei Dai; Liqiang Cao; Xia Zhang; Ning Zhao; Xueping Guo
Appl. Phys. Lett. 99, 052104 (2011)
https://doi.org/10.1063/1.3610489
Unipolar resistive switching mechanism speculated from irreversible low resistance state of Cu2O films
Appl. Phys. Lett. 99, 052105 (2011)
https://doi.org/10.1063/1.3619833
Interaction between hydrogen and the Fe-B pair in boron-doped p-type silicon
Appl. Phys. Lett. 99, 052106 (2011)
https://doi.org/10.1063/1.3619848
Transport and thermoelectric properties in Copper intercalated TiS2 chalcogenide
Appl. Phys. Lett. 99, 052107 (2011)
https://doi.org/10.1063/1.3621834
Atomic-layer-deposited Al2O3 on Bi2Te3 for topological insulator field-effect transistors
Appl. Phys. Lett. 99, 052108 (2011)
https://doi.org/10.1063/1.3622306
Dual-donor codoping approach to realize low-resistance n-type ZnS semiconductor
Appl. Phys. Lett. 99, 052109 (2011)
https://doi.org/10.1063/1.3624531
MAGNETISM AND SUPERCONDUCTIVITY
Linewidth reduction in a spin-torque nano-oscillator caused by non-conservative current-induced coupling between magnetic layers
D. Gusakova; M. Quinsat; J. F. Sierra; U. Ebels; B. Dieny; L. D. Buda-Prejbeanu; M.-C. Cyrille; V. Tiberkevich; A. N. Slavin
Appl. Phys. Lett. 99, 052501 (2011)
https://doi.org/10.1063/1.3615283
d ferromagnetism in undoped sphalerite ZnS nanoparticles
Appl. Phys. Lett. 99, 052502 (2011)
https://doi.org/10.1063/1.3622303
Magnetic phase separation in SrCoOx (2.5 ≤ x ≤ 3)
Appl. Phys. Lett. 99, 052503 (2011)
https://doi.org/10.1063/1.3622644
Effects of nanocrystal formation on the soft magnetic properties of Fe-based bulk metallic glasses
Appl. Phys. Lett. 99, 052504 (2011)
https://doi.org/10.1063/1.3621832
Ferromagnetism in C-doped SnO2 thin films
Appl. Phys. Lett. 99, 052505 (2011)
https://doi.org/10.1063/1.3617439
Spin exchange interactions in hexagonal manganites RMnO3 (R = Tb, Dy, Ho, Er) epitaxial thin films
Appl. Phys. Lett. 99, 052506 (2011)
https://doi.org/10.1063/1.3622768
Magnetization reversal in composition-controlled Gd1–xCox ferrimagnetic films close to compensation composition
Appl. Phys. Lett. 99, 052507 (2011)
https://doi.org/10.1063/1.3609860
High-power rf oscillation induced in half-metallic Co2MnSi layer by spin-transfer torque
Appl. Phys. Lett. 99, 052510 (2011)
https://doi.org/10.1063/1.3624470
Slow magnetization dynamics and energy barriers near vortex state nucleation in circular permalloy dots
G. N. Kakazei; M. Ilyn; O. Chubykalo-Fesenko; J. Gonzalez; A. A. Serga; A. V. Chumak; P. A. Beck; B. Laegel; B. Hillebrands; K. Y. Guslienko
Appl. Phys. Lett. 99, 052512 (2011)
https://doi.org/10.1063/1.3619846
Oxygen enhanced ferromagnetism in Cr-doped ZnO films
Appl. Phys. Lett. 99, 052513 (2011)
https://doi.org/10.1063/1.3624589
Restoration of bulk magnetic properties by strain engineering in epitaxial CoFe2O4 (001) ultrathin films
S. Matzen; J.-B. Moussy; R. Mattana; F. Petroff; C. Gatel; B. Warot-Fonrose; J. C. Cezar; A. Barbier; M.-A. Arrio; Ph. Sainctavit
Appl. Phys. Lett. 99, 052514 (2011)
https://doi.org/10.1063/1.3622307
DIELECTRICS AND FERROELECTRICITY
Effects of ferroelectric dead layer on the electron transport in ferroelectric tunneling junctions
Appl. Phys. Lett. 99, 052901 (2011)
https://doi.org/10.1063/1.3619841
Elastic relaxation and correlation of local strain gradients with ferroelectric domains in (001) BiFeO3 nanostructures
Jeffrey A. Klug; Martin V. Holt; Ramesh Nath Premnath; Alexandra Joshi-Imre; Seungbum Hong; Ram S. Katiyar; Michael J. Bedzyk; Orlando Auciello
Appl. Phys. Lett. 99, 052902 (2011)
https://doi.org/10.1063/1.3605594
Phase-field simulation of domain structures in epitaxial BiFeO3 films on vicinal substrates
Appl. Phys. Lett. 99, 052903 (2011)
https://doi.org/10.1063/1.3605674
Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices
Shaoren Deng; Qi Xie; Davy Deduytsche; Marc Schaekers; Dennis Lin; Matty Caymax; Annelies Delabie; Sven Van den Berghe; Xinping Qu; Christophe Detavernier
Appl. Phys. Lett. 99, 052906 (2011)
https://doi.org/10.1063/1.3622649
Ferroelectric phase transition in polycrystalline KTaO3 thin film revealed by terahertz spectroscopy
Appl. Phys. Lett. 99, 052908 (2011)
https://doi.org/10.1063/1.3624710
NANOSCALE SCIENCE AND DESIGN
Non-contact and all-electrical method for monitoring the motion of semiconducting nanowires
Appl. Phys. Lett. 99, 053101 (2011)
https://doi.org/10.1063/1.3614562
Patterning of silver nanoparticles on visible light-sensitive Mn-doped lithium niobate photogalvanic crystals
Appl. Phys. Lett. 99, 053102 (2011)
https://doi.org/10.1063/1.3622654
Transparent interconnections formed by rapid single-step fabrication of graphene patterns
J. B. Park; W. Xiong; Z. Q. Xie; Y. Gao; M. Qian; M. Mitchell; M. Mahjouri-Samani; Y. S. Zhou; L. Jiang; Y. F. Lu
Appl. Phys. Lett. 99, 053103 (2011)
https://doi.org/10.1063/1.3622660
Identification of embedded charge defects in suspended silicon nanowires using a carbon-nanotube cantilever gate
Appl. Phys. Lett. 99, 053104 (2011)
https://doi.org/10.1063/1.3619177
Origin of the n-type transport behavior of azafullerene encapsulated single-walled carbon nanotubes
Nguyen Thanh Cuong; Minoru Otani; Yoko Iizumi; Toshiya Okazaki; Georgios Rotas; Nikos Tagmatarchis; Yongfeng Li; Toshiro Kaneko; Rikizo Hatakeyama; Susumu Okada
Appl. Phys. Lett. 99, 053105 (2011)
https://doi.org/10.1063/1.3619828
Measuring the short-range force field above a single molecule with atomic resolution
Appl. Phys. Lett. 99, 053106 (2011)
https://doi.org/10.1063/1.3619829
Molecular dynamics simulations of oxide memristors: Crystal field effects
Appl. Phys. Lett. 99, 053108 (2011)
https://doi.org/10.1063/1.3622665
On the role of acoustic waves (phonons) in equilibrium heat exchange across a vacuum gap
Appl. Phys. Lett. 99, 053109 (2011)
https://doi.org/10.1063/1.3623433
From microns to kissing contact: Dynamic positioning of two nano-systems
Appl. Phys. Lett. 99, 053110 (2011)
https://doi.org/10.1063/1.3623437
Diffusion limited current in very high aspect ratio Pt needle electrodes
Appl. Phys. Lett. 99, 053113 (2011)
https://doi.org/10.1063/1.3621875
Tailoring oxidation degrees of graphene oxide by simple chemical reactions
Appl. Phys. Lett. 99, 053114 (2011)
https://doi.org/10.1063/1.3622637
Self-assembled Si/SiO2 superlattice in Si-rich oxide films
Chu-Yun Hsiao (蕭竹芸); Chuan-Feng Shih (施權峰); Kuan-Wei Su (蘇冠瑋); Hui-Ju Chen (陳惠茹); Sheng-Wen Fu (傅聖文)
Appl. Phys. Lett. 99, 053115 (2011)
https://doi.org/10.1063/1.3624706
Origin of the high p-doping in F intercalated graphene on SiC
Appl. Phys. Lett. 99, 053117 (2011)
https://doi.org/10.1063/1.3623484
Electrical power dissipation in semiconducting carbon nanotubes on single crystal quartz and amorphous SiO2
Appl. Phys. Lett. 99, 053120 (2011)
https://doi.org/10.1063/1.3622769
Transition-metal-molecular sandwich nanowires as magnetic on/off switch
Appl. Phys. Lett. 99, 053121 (2011)
https://doi.org/10.1063/1.3624458
On the importance of optical phonons to thermal conductivity in nanostructures
Appl. Phys. Lett. 99, 053122 (2011)
https://doi.org/10.1063/1.3615709
Influence of the local environment on Zn acceptors in the GaAs(110) surface
Appl. Phys. Lett. 99, 053124 (2011)
https://doi.org/10.1063/1.3624535
Controlling the function of carbon nanotube devices with re-writable charge patterns
Appl. Phys. Lett. 99, 053125 (2011)
https://doi.org/10.1063/1.3622138
Increased carrier generation rate in Si nanocrystals in SiO2 investigated by induced absorption
Appl. Phys. Lett. 99, 053126 (2011)
https://doi.org/10.1063/1.3622308
ORGANIC ELECTRONICS AND PHOTONICS
An organic p-i-n homojunction as ultra violet light emitting diode and visible-blind photodiode in one
Appl. Phys. Lett. 99, 053301 (2011)
https://doi.org/10.1063/1.3617427
Role of oxygen-bonds in the degradation process of phosphorescent organic light emitting diodes
Appl. Phys. Lett. 99, 053302 (2011)
https://doi.org/10.1063/1.3617459
Two-dimensional orientation control of organic semiconducting amorphous films by mechanical brushing
Appl. Phys. Lett. 99, 053303 (2011)
https://doi.org/10.1063/1.3608315
Effect of light scattering on the transmission spectra of organic nanocrystals
Appl. Phys. Lett. 99, 053304 (2011)
https://doi.org/10.1063/1.3623434
Organic photovoltaic power conversion efficiency improved by AC electric field alignment during fabrication
Appl. Phys. Lett. 99, 053305 (2011)
https://doi.org/10.1063/1.3623477
Conductance switching in organic ferroelectric field-effect transistors
Appl. Phys. Lett. 99, 053306 (2011)
https://doi.org/10.1063/1.3621857
Electrical properties and non-volatile memory effect of the [Fe(HB(pz)3)2] spin crossover complex integrated in a microelectrode device
Tarik Mahfoud; Gábor Molnár; Saioa Cobo; Lionel Salmon; Christophe Thibault; Christophe Vieu; Philippe Demont; Azzedine Bousseksou
Appl. Phys. Lett. 99, 053307 (2011)
https://doi.org/10.1063/1.3616147
Orientation of organic molecules in a monolayer vis-à-vis their molecular orbitals and transport gap
Appl. Phys. Lett. 99, 053308 (2011)
https://doi.org/10.1063/1.3623441
DEVICE PHYSICS
On inhibiting Auger intraband relaxation in InAs/GaAs quantum dot intermediate band solar cells
Appl. Phys. Lett. 99, 053504 (2011)
https://doi.org/10.1063/1.3621876
Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects
Appl. Phys. Lett. 99, 053505 (2011)
https://doi.org/10.1063/1.3622121
BIOPHYSICS AND BIO-INSPIRED SYSTEMS
Probing the physiology of ASH neuron in Caenorhabditis elegans using electric current stimulation
Appl. Phys. Lett. 99, 053702 (2011)
https://doi.org/10.1063/1.3615821
INTERDISCIPLINARY AND GENERAL PHYSICS
Optically activated core flow shifting within a focused flow
Appl. Phys. Lett. 99, 054102 (2011)
https://doi.org/10.1063/1.3623443
ERRATA
Erratum: “Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy” [Appl. Phys. Lett. 98, 242110 (2011)]
E. A. Douglas; A. Scheurmann; R. P. Davies; B. P. Gila; Hyun Cho; V. Craciun; E. S. Lambers; S. J. Pearton; F. Ren
Appl. Phys. Lett. 99, 059901 (2011)
https://doi.org/10.1063/1.3617417
Erratum: “Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy” [Appl. Phys. Lett. 95, 071905 (2009)]
Th. Kehagias; G. P. Dimitrakopulos; J. Kioseoglou; H. Kirmse; C. Giesen; M. Heuken; A. Georgakilas; W. Neumann; Th. Karakostas; Ph. Komninou
Appl. Phys. Lett. 99, 059902 (2011)
https://doi.org/10.1063/1.3623430
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer
Mritunjay Kumar, Vishal Khandelwal, et al.