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Issues
7 February 2011
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
Intersubband gain without global inversion through dilute nitride band engineering
Appl. Phys. Lett. 98, 061101 (2011)
https://doi.org/10.1063/1.3552204
Multifrequency terahertz lasing from codoped silicon crystals
Appl. Phys. Lett. 98, 061102 (2011)
https://doi.org/10.1063/1.3553769
Tunable single mode lasing from an on-chip optofluidic ring resonator laser
Appl. Phys. Lett. 98, 061103 (2011)
https://doi.org/10.1063/1.3554362
Ultrashort pulses characterization by nonlinear diffraction from virtual beam
Appl. Phys. Lett. 98, 061104 (2011)
https://doi.org/10.1063/1.3554370
Electroluminescence from amorphous- multilayers using lateral carrier injection
Appl. Phys. Lett. 98, 061105 (2011)
https://doi.org/10.1063/1.3553778
Two-color terahertz response in bilayer graphene nanoribbons with spin-orbit coupling
Appl. Phys. Lett. 98, 061107 (2011)
https://doi.org/10.1063/1.3555631
Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy
Appl. Phys. Lett. 98, 061108 (2011)
https://doi.org/10.1063/1.3555439
Direct gap electroluminescence from heterostructure diodes
Appl. Phys. Lett. 98, 061109 (2011)
https://doi.org/10.1063/1.3554747
Single-mode quantum cascade lasers based on a folded Fabry-Perot cavity
Appl. Phys. Lett. 98, 061110 (2011)
https://doi.org/10.1063/1.3554757
A terahertz pulse emitter monolithically integrated with a quantum cascade laser
Appl. Phys. Lett. 98, 061112 (2011)
https://doi.org/10.1063/1.3553021
PLASMAS AND ELECTRICAL DISCHARGES
Measurement of the valence band structure in dielectric films by a focused ion beam
Appl. Phys. Lett. 98, 061501 (2011)
https://doi.org/10.1063/1.3554433
Highly collimated electron beams from double-gate field emitter arrays with large collimation gate apertures
Appl. Phys. Lett. 98, 061502 (2011)
https://doi.org/10.1063/1.3551541
Experimental demonstration of Smith–Purcell radiation enhancement by frequency multiplication in open cavity
Appl. Phys. Lett. 98, 061503 (2011)
https://doi.org/10.1063/1.3554435
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
An analytical model of strain isolation for stretchable and flexible electronics
Appl. Phys. Lett. 98, 061902 (2011)
https://doi.org/10.1063/1.3553020
Selective control of polarized emission from patterned GaN/AlN quantum dot ensembles on Si(111)
Appl. Phys. Lett. 98, 061903 (2011)
https://doi.org/10.1063/1.3554371
Metamagnetic phase transformation in polycrystalline alloy
Appl. Phys. Lett. 98, 061904 (2011)
https://doi.org/10.1063/1.3554423
The enhanced binding energy for biexcitons in InAs quantum dots
Appl. Phys. Lett. 98, 061905 (2011)
https://doi.org/10.1063/1.3554425
Phonon deformation potentials in wurtzite GaN and ZnO determined by uniaxial pressure dependent Raman measurements
Appl. Phys. Lett. 98, 061906 (2011)
https://doi.org/10.1063/1.3554434
A comparative study of photoluminescence of Zn-polar and O-polar faces in single crystal ZnO using moment analysis
Appl. Phys. Lett. 98, 061907 (2011)
https://doi.org/10.1063/1.3554722
Triaxial stress distributions in Cu/low-k interconnect features
Appl. Phys. Lett. 98, 061908 (2011)
https://doi.org/10.1063/1.3549876
Carrier dynamics between delocalized and localized states in type-II GaAsSb/GaAs quantum wells
Appl. Phys. Lett. 98, 061910 (2011)
https://doi.org/10.1063/1.3548544
InGaN/GaN quantum wells on self-organized faceted GaN islands: Growth and luminescence studies
Appl. Phys. Lett. 98, 061911 (2011)
https://doi.org/10.1063/1.3554421
Realization of optimal bandgaps in solid-solid, solid-air, and hybrid solid-air-solid phononic crystal slabs
Appl. Phys. Lett. 98, 061912 (2011)
https://doi.org/10.1063/1.3543848
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
The p-type ZnO film realized by a hydrothermal treatment method
Appl. Phys. Lett. 98, 062102 (2011)
https://doi.org/10.1063/1.3549304
Direct measurement of the band gap and Fermi level position at
Ph. Ebert; S. Schaafhausen; A. Lenz; A. Sabitova; L. Ivanova; M. Dähne; Y.-L. Hong; S. Gwo; H. Eisele
Appl. Phys. Lett. 98, 062103 (2011)
https://doi.org/10.1063/1.3553022
Theory of quasiballistic transport through nanocrystalline silicon dots
Appl. Phys. Lett. 98, 062104 (2011)
https://doi.org/10.1063/1.3553501
Metastable properties of with and without sodium
Appl. Phys. Lett. 98, 062105 (2011)
https://doi.org/10.1063/1.3553783
Sub-100-nm negative bend resistance ballistic sensors for high spatial resolution magnetic field detection
A. M. Gilbertson; D. Benstock; M. Fearn; A. Kormányos; S. Ladak; M. T. Emeny; C. J. Lambert; T. Ashley; S. A. Solin; L. F. Cohen
Appl. Phys. Lett. 98, 062106 (2011)
https://doi.org/10.1063/1.3554427
Experimental demonstration of field effect transistors with scalable nonalloyed source/drain contacts
Appl. Phys. Lett. 98, 062107 (2011)
https://doi.org/10.1063/1.3553192
Attainment of low interfacial trap density absent of a large midgap peak in by passivation
C. A. Lin; H. C. Chiu; T. H. Chiang; T. D. Lin; Y. H. Chang; W. H. Chang; Y. C. Chang; W.-E. Wang; J. Dekoster; T. Y. Hoffmann; M. Hong; J. Kwo
Appl. Phys. Lett. 98, 062108 (2011)
https://doi.org/10.1063/1.3554375
MAGNETISM AND SUPERCONDUCTIVITY
Dynamics of two coupled vortices in a spin valve nanopillar excited by spin transfer torque
N. Locatelli; V. V. Naletov; J. Grollier; G. de Loubens; V. Cros; C. Deranlot; C. Ulysse; G. Faini; O. Klein; A. Fert
Appl. Phys. Lett. 98, 062501 (2011)
https://doi.org/10.1063/1.3553771
DIELECTRICS AND FERROELECTRICITY
High-resolution core-level photoemission study of -treated gate dielectric on Ge probed by synchrotron radiation
T.-W. Pi (皮敦文); M. L. Huang (黃懋霖); W. C. Lee (李威縉); L. K. Chu (朱龍琨); T. D. Lin (林宗達); T. H. Chiang (江宗鴻); Y. C. Wang (王貽樟); Y. D. Wu (吳彥達); M. Hong (洪銘輝); J. Kwo (郭瑞年)
Appl. Phys. Lett. 98, 062903 (2011)
https://doi.org/10.1063/1.3551726
Humidity effects on (001) single crystal surface water adsorption
Appl. Phys. Lett. 98, 062905 (2011)
https://doi.org/10.1063/1.3544586
NANOSCALE SCIENCE AND DESIGN
Dynamic ripples in single layer graphene
Appl. Phys. Lett. 98, 063101 (2011)
https://doi.org/10.1063/1.3551574
Raman study of interfacial load transfer in graphene nanocomposites
Appl. Phys. Lett. 98, 063102 (2011)
https://doi.org/10.1063/1.3552685
All-printed infrared sensor based on multiwalled carbon nanotubes
Appl. Phys. Lett. 98, 063103 (2011)
https://doi.org/10.1063/1.3552686
Amplified spontaneous emission from core and shell transitions in CdSe/CdS nanorods fabricated by seeded growth
Appl. Phys. Lett. 98, 063105 (2011)
https://doi.org/10.1063/1.3549298
junction transition in InAs self-assembled quantum dot coupled with SQUID
S. Kim; R. Ishiguro; M. Kamio; Y. Doda; E. Watanabe; D. Tsuya; K. Shibata; K. Hirakawa; H. Takayanagi
Appl. Phys. Lett. 98, 063106 (2011)
https://doi.org/10.1063/1.3552715
Influence of gas rarefaction on the lateral resolution achievable by thermocapillary patterning
Appl. Phys. Lett. 98, 063107 (2011)
https://doi.org/10.1063/1.3551535
Motional modes in bulk powder and few-molecule clusters of tris(8-hydroxyquinoline aluminum) and their relation to spin dephasing
Lopamudra Das; Jennette Mateo; Saumil Bandyopadhyay; Supriyo Bandyopadhyay; Jarrod D. Edwards; John Anderson
Appl. Phys. Lett. 98, 063109 (2011)
https://doi.org/10.1063/1.3554753
The mechanical resonances of electrostatically coupled nanocantilevers
Appl. Phys. Lett. 98, 063110 (2011)
https://doi.org/10.1063/1.3553779
ORGANIC ELECTRONICS AND PHOTONICS
Imbalanced mobilities causing S-shaped IV curves in planar heterojunction organic solar cells
Appl. Phys. Lett. 98, 063301 (2011)
https://doi.org/10.1063/1.3553764
Photoluminescence enhancement and quenching in metal-semiconductor quantum dot hybrid arrays
Appl. Phys. Lett. 98, 063305 (2011)
https://doi.org/10.1063/1.3553766
Photoinduced magnetoresistance in organic field-effect transistors
Appl. Phys. Lett. 98, 063307 (2011)
https://doi.org/10.1063/1.3554388
DEVICE PHYSICS
Room-temperature semiconductor coherent Smith–Purcell terahertz sources
Appl. Phys. Lett. 98, 063501 (2011)
https://doi.org/10.1063/1.3554364
Temperature effect on negative bias-induced instability of HfInZnO amorphous oxide thin film transistor
Dae Woong Kwon; Jang Hyun Kim; Ji Soo Chang; Sang Wan Kim; Wandong Kim; Jae Chul Park; Ihun Song; Chang Jung Kim; U In Jung; Byung-Gook Park
Appl. Phys. Lett. 98, 063502 (2011)
https://doi.org/10.1063/1.3549180
Diameter-dependent analytical model for light spot movement in carbon nanotube array transistors
Appl. Phys. Lett. 98, 063503 (2011)
https://doi.org/10.1063/1.3549769
Fast polarization switching panel with high brightness and contrast ratio for three-dimensional display
Appl. Phys. Lett. 98, 063505 (2011)
https://doi.org/10.1063/1.3548863
Material anisotropy unveiled by random scattering of surface acoustic waves
Appl. Phys. Lett. 98, 063506 (2011)
https://doi.org/10.1063/1.3554424
Ambient field effects on the current-voltage characteristics of nanowire field effect transistors
Appl. Phys. Lett. 98, 063508 (2011)
https://doi.org/10.1063/1.3555426
INTERDISCIPLINARY AND GENERAL PHYSICS
Electric response of a cell of hydrogel: Role of the electrodes
Appl. Phys. Lett. 98, 064101 (2011)
https://doi.org/10.1063/1.3553502
COMMENTS
Comment on “Ultrahigh secondary electron emission of carbon nanotubes” [Appl. Phys. Lett. 96, 213113 (2010)]
Appl. Phys. Lett. 98, 066101 (2011)
https://doi.org/10.1063/1.3552975
ERRATA
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Superconducting flip-chip devices using indium microspheres on Au-passivated Nb or NbN as under-bump metallization layer
Achintya Paradkar, Paul Nicaise, et al.
Special issue APL organic and hybrid photodetectors
Karl Leo, Canek Fuentes-Hernandez, et al.