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LASERS, OPTICS, AND OPTOELECTRONICS

Localization of surface plasmon polaritons in hexagonal arrays of Moiré cavities

Sinan Balci; Askin Kocabas; Coskun Kocabas; Atilla Aydinli

Appl. Phys. Lett. 98, 031101 (2011) https://doi.org/10.1063/1.3529469

Abstract

View articletitled, Localization of surface plasmon polaritons in hexagonal arrays of Moiré cavities

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Design and theoretical analysis of resonant cavity for second-harmonic generation with high efficiency

Sidong Lei; Yao Yao; Zhaosheng Li; Tao Yu; Zhigang Zou

Appl. Phys. Lett. 98, 031102 (2011) https://doi.org/10.1063/1.3544056

Abstract

View articletitled, Design and theoretical analysis of resonant cavity for second-harmonic generation with high efficiency

Supplementary Material

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Controllable assembly and cycling conversion of various supramolecular aggregates of a cyanine dye

Hongxia Sun; Junfeng Xiang; Qianfan Yang; Qian Shang; Qiuju Zhou; Yanxia Zhang; Guangzhi Xu; Yalin Tang

Appl. Phys. Lett. 98, 031103 (2011) https://doi.org/10.1063/1.3535980

Abstract

View articletitled, Controllable assembly and cycling conversion of various supramolecular aggregates of a cyanine dye

Supplementary Material

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Strong pulse asymmetry in quantum-dot mode-locked semiconductor lasers

Mindaugas Radziunas; Andrei G. Vladimirov; Evgeny A. Viktorov; Gerrit Fiol; Holger Schmeckebier; Dieter Bimberg

Appl. Phys. Lett. 98, 031104 (2011) https://doi.org/10.1063/1.3544579

Abstract

View articletitled, Strong pulse asymmetry in quantum-dot mode-locked semiconductor lasers

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Strain distribution in bent ZnO microwires

C. P. Dietrich; M. Lange; F. J. Klüpfel; H. von Wenckstern; R. Schmidt-Grund; M. Grundmann

Appl. Phys. Lett. 98, 031105 (2011) https://doi.org/10.1063/1.3544939

Abstract

View articletitled, Strain distribution in bent ZnO microwires

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Room temperature photoluminescence of Ge multiple quantum wells with Ge-rich barriers

E. Gatti; E. Grilli; M. Guzzi; D. Chrastina; G. Isella; H. von Känel

Appl. Phys. Lett. 98, 031106 (2011) https://doi.org/10.1063/1.3541782

Abstract

View articletitled, Room temperature photoluminescence of Ge multiple quantum wells with Ge-rich barriers

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On the role of evanescent modes and group index tapering in slow light photonic crystal waveguide coupling efficiency

Amir Hosseini; Xiaochuan Xu; David N. Kwong; Harish Subbaraman; Wei Jiang; Ray T. Chen

Appl. Phys. Lett. 98, 031107 (2011) https://doi.org/10.1063/1.3548557

Abstract

View articletitled, On the role of evanescent modes and group index tapering in slow light photonic crystal waveguide coupling efficiency

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PLASMAS AND ELECTRICAL DISCHARGES

Making a geometrically asymmetric capacitive rf discharge electrically symmetric

Julian Schulze; Edmund Schüngel; Uwe Czarnetzki; Markus Gebhardt; Ralf Peter Brinkmann; Thomas Mussenbrock

Appl. Phys. Lett. 98, 031501 (2011) https://doi.org/10.1063/1.3544541

Abstract

View articletitled, Making a geometrically asymmetric capacitive rf discharge electrically symmetric

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Atomic packing in ${Mg}_{61} {Cu}_{28} {Gd}_{11}$ bulk metallic glass

X. D. Wang; H. B. Lou; S. G. Wang; J. Xu; J. Z. Jiang

Appl. Phys. Lett. 98, 031901 (2011) https://doi.org/10.1063/1.3544049

Abstract

View articletitled, Atomic packing in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Mg</mtext></mrow><mrow><mn>61</mn></mrow></msub><msub><mrow><mtext>Cu</mtext></mrow><mrow><mn>28</mn></mrow></msub><msub><mrow><mtext>Gd</mtext></mrow><mrow><mn>11</mn></mrow></msub></mrow></math> bulk metallic glass

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Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths

F. B. Naranjo; P. K. Kandaswamy; S. Valdueza-Felip; V. Calvo; M. González-Herráez; S. Martín-López; P. Corredera; J. A. Méndez; G. R. Mutta; B. Lacroix; P. Ruterana; E. Monroy

Appl. Phys. Lett. 98, 031902 (2011) https://doi.org/10.1063/1.3535609

Abstract

View articletitled, Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths

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Strong in-plane anisotropy of magneto-optical Kerr effect in corrugated cobalt films deposited on highly ordered two-dimensional colloidal crystals

Z. L. Han; J. H. Ai; P. Zhan; J. Du; H. F. Ding; Z. L. Wang

Appl. Phys. Lett. 98, 031903 (2011) https://doi.org/10.1063/1.3544582

Abstract

View articletitled, Strong in-plane anisotropy of magneto-optical Kerr effect in corrugated cobalt films deposited on highly ordered two-dimensional colloidal crystals

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Probing the atomic structure of amorphous ${Ta}_{2} O_{5}$ coatings

R. Bassiri; K. B. Borisenko; D. J. H. Cockayne; J. Hough; I. MacLaren; S. Rowan

Appl. Phys. Lett. 98, 031904 (2011) https://doi.org/10.1063/1.3535982

Abstract

View articletitled, Probing the atomic structure of amorphous <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Ta</mtext></mrow><mn>2</mn></msub><msub><mtext>O</mtext><mn>5</mn></msub></mrow></math> coatings

Supplementary Material

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Enhanced optical constants of nanocrystalline yttrium oxide thin films

C. V. Ramana; V. H. Mudavakkat; K. Kamala Bharathi; V. V. Atuchin; L. D. Pokrovsky; V. N. Kruchinin

Appl. Phys. Lett. 98, 031905 (2011) https://doi.org/10.1063/1.3524202

Abstract

View articletitled, Enhanced optical constants of nanocrystalline yttrium oxide thin films

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Thermal annealing and grain boundary effects on ferromagnetism in $Y_{2} O_{3} : Co$ diluted magnetic oxide nanocrystals

Y. L. Soo; T. S. Wu; C. S. Wang; S. L. Chang; H. Y. Lee; P. P. Chu; C. Y. Chen; L. J. Chou; T. S. Chan; C. A. Hsieh; J. F. Lee; J. Kwo; M. Hong

Appl. Phys. Lett. 98, 031906 (2011) https://doi.org/10.1063/1.3544059

Abstract

View articletitled, Thermal annealing and grain boundary effects on ferromagnetism in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mtext>Y</mtext><mn>2</mn></msub><msub><mtext>O</mtext><mn>3</mn></msub><mo>:</mo><mtext>Co</mtext></mrow></math> diluted magnetic oxide nanocrystals

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Extreme low-temperature molecular beam epitaxy of ZnO-based quantum structures

S. Blumstengel; S. Sadofev; H. Kirmse; F. Henneberger

Appl. Phys. Lett. 98, 031907 (2011) https://doi.org/10.1063/1.3544575

Abstract

View articletitled, Extreme low-temperature molecular beam epitaxy of ZnO-based quantum structures

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Vacancy-mediated diffusion in biaxially strained Si

Damien Caliste; Konstantin Z. Rushchanskii; Pascal Pochet

Appl. Phys. Lett. 98, 031908 (2011) https://doi.org/10.1063/1.3548547

Abstract

View articletitled, Vacancy-mediated diffusion in biaxially strained Si

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Ductility of bulk metallic glass composites: Microstructural effects

F. Abdeljawad; M. Fontus; M. Haataja

Appl. Phys. Lett. 98, 031909 (2011) https://doi.org/10.1063/1.3531660

Abstract

View articletitled, Ductility of bulk metallic glass composites: Microstructural effects

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Uniaxial strain-modulated conductivity in manganite superlattice $({LaMnO}_{3} / {SrMnO}_{3})$

Dan Cao; Meng-Qiu Cai; Wang-Yu Hu; Jun Peng; Yue Zheng; Hai-Tao Huang

Appl. Phys. Lett. 98, 031910 (2011) https://doi.org/10.1063/1.3548675

Abstract

View articletitled, Uniaxial strain-modulated conductivity in manganite superlattice <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mo>(</mo><mrow><msub><mrow><mtext>LaMnO</mtext></mrow><mn>3</mn></msub><mo>/</mo><msub><mrow><mtext>SrMnO</mtext></mrow><mn>3</mn></msub></mrow><mo>)</mo></mrow></mrow></math>

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Creation of charged excitons with two-color excitation method and initialization of electron spin qubit in quantum dots

Hideki Gotoh; Haruki Sanada; Hidehiko Kamada; Hiroshi Yamaguchi; Tetsuomi Sogawa

Appl. Phys. Lett. 98, 032101 (2011) https://doi.org/10.1063/1.3543841

Abstract

View articletitled, Creation of charged excitons with two-color excitation method and initialization of electron spin qubit in quantum dots

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Correlation between structure and electrical transport in ion-irradiated graphene grown on Cu foils

Grant Buchowicz; Peter R. Stone; Jeremy T. Robinson; Cory D. Cress; Jeffrey W. Beeman; Oscar D. Dubon

Appl. Phys. Lett. 98, 032102 (2011) https://doi.org/10.1063/1.3536529

Abstract

View articletitled, Correlation between structure and electrical transport in ion-irradiated graphene grown on Cu foils

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Anisotropic transport of two-dimensional electron gas modulated by embedded elongated GaSb/GaAs quantum dots

Guodong Li; Chao Jiang; Qinsheng Zhu; Hiroyuki Sakaki

Appl. Phys. Lett. 98, 032103 (2011) https://doi.org/10.1063/1.3541882

Abstract

View articletitled, Anisotropic transport of two-dimensional electron gas modulated by embedded elongated GaSb/GaAs quantum dots

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Bandstructure line-up of epitaxial Fe/MgO/Ge heterostructures: A combined x-ray photoelectron spectroscopy and transport study

M. Cantoni; D. Petti; C. Rinaldi; R. Bertacco

Appl. Phys. Lett. 98, 032104 (2011) https://doi.org/10.1063/1.3543851

Abstract

View articletitled, Bandstructure line-up of epitaxial Fe/MgO/Ge heterostructures: A combined x-ray photoelectron spectroscopy and transport study

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Nonvolatile resistive switching in ${Pr}_{0.7} {Ca}_{0.3} {MnO}_{3}$ devices using multilayer graphene electrodes

Wootae Lee; Gunho Jo; Sangchul Lee; Jubong Park; Minseok Jo; Joonmyoung Lee; Seungjae Jung; Seonghyun Kim; Jungho Shin; Sangsu Park; Takhee Lee; Hyunsang Hwang

Appl. Phys. Lett. 98, 032105 (2011) https://doi.org/10.1063/1.3544051

Abstract

View articletitled, Nonvolatile resistive switching in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Pr</mtext></mrow><mrow><mn>0.7</mn></mrow></msub><msub><mrow><mtext>Ca</mtext></mrow><mrow><mn>0.3</mn></mrow></msub><msub><mrow><mtext>MnO</mtext></mrow><mn>3</mn></msub></mrow></math> devices using multilayer graphene electrodes

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Spin current generation by adiabatic pumping in monolayer graphene

Qingtian Zhang; K. S. Chan; Zijing Lin

Appl. Phys. Lett. 98, 032106 (2011) https://doi.org/10.1063/1.3544581

Abstract

View articletitled, Spin current generation by adiabatic pumping in monolayer graphene

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Direct observation of the $1 / E$ dependence of time dependent dielectric breakdown in the presence of copper

Larry Zhao; Zsolt Tőkei; Kristof Croes; Christopher J. Wilson; Mikhail Baklanov; Gerald P. Beyer; Cor Claeys

Appl. Phys. Lett. 98, 032107 (2011) https://doi.org/10.1063/1.3543850

Abstract

View articletitled, Direct observation of the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>1</mn><mo>/</mo><mi>E</mi></mrow></math> dependence of time dependent dielectric breakdown in the presence of copper

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Inelastic electron tunneling study of crystallization effects and defect energies in hafnium oxide gate dielectrics

Eun Ji Kim; Michael Shandalov; Krishna C. Saraswat; Paul C. McIntyre

Appl. Phys. Lett. 98, 032108 (2011) https://doi.org/10.1063/1.3527977

Abstract

View articletitled, Inelastic electron tunneling study of crystallization effects and defect energies in hafnium oxide gate dielectrics

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Disorder induced Coulomb gaps in graphene constrictions with different aspect ratios

B. Terrés; J. Dauber; C. Volk; S. Trellenkamp; U. Wichmann; C. Stampfer

Appl. Phys. Lett. 98, 032109 (2011) https://doi.org/10.1063/1.3544580

Abstract

View articletitled, Disorder induced Coulomb gaps in graphene constrictions with different aspect ratios

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Nanowatt logic stochastic resonance in branched resonant tunneling diodes

F. Hartmann; A. Forchel; I. Neri; L. Gammaitoni; L. Worschech

Appl. Phys. Lett. 98, 032110 (2011) https://doi.org/10.1063/1.3548539

Abstract

View articletitled, Nanowatt logic stochastic resonance in branched resonant tunneling diodes

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Phonon-limited and effective low-field mobility in $n$ - and $p$ -type [100]-, [110]-, and [111]-oriented Si nanowire transistors

Mathieu Luisier

Appl. Phys. Lett. 98, 032111 (2011) https://doi.org/10.1063/1.3540689

Abstract

View articletitled, Phonon-limited and effective low-field mobility in <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math>- and <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-type [100]-, [110]-, and [111]-oriented Si nanowire transistors

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MAGNETISM AND SUPERCONDUCTIVITY

Cooling electrons from 1 to 0.4 K with V-based nanorefrigerators

O. Quaranta; P. Spathis; F. Beltram; F. Giazotto

Appl. Phys. Lett. 98, 032501 (2011) https://doi.org/10.1063/1.3544058

Abstract

View articletitled, Cooling electrons from 1 to 0.4 K with V-based nanorefrigerators

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DIELECTRICS AND FERROELECTRICITY

High dielectric permittivity and low percolation threshold in polymer composites based on SiC-carbon nanotubes micro/nano hybrid

Jin-Kai Yuan; Wei-Long Li; Sheng-Hong Yao; You-Qin Lin; Alain Sylvestre; Jinbo Bai

Appl. Phys. Lett. 98, 032901 (2011) https://doi.org/10.1063/1.3544942

Abstract

View articletitled, High dielectric permittivity and low percolation threshold in polymer composites based on SiC-carbon nanotubes micro/nano hybrid

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NANOSCALE SCIENCE AND DESIGN

Epitaxial growth and structural property of graphene on Pt(111)

M. Gao; Y. Pan; L. Huang; H. Hu; L. Z. Zhang; H. M. Guo; S. X. Du; H.-J. Gao

Appl. Phys. Lett. 98, 033101 (2011) https://doi.org/10.1063/1.3543624

Abstract

View articletitled, Epitaxial growth and structural property of graphene on Pt(111)

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Highly selective spectral response with enhanced responsivity of $n -ZnO / p -Si$ radial heterojunction nanowire photodiodes

Han-Don Um; Syed Abdul Moiz; Kwang-Tae Park; Jin-Young Jung; Sang-Won Jee; Cheol Hyoun Ahn; Dong Chan Kim; Hyung Koun Cho; Dong-Wook Kim; Jung-Ho Lee

Appl. Phys. Lett. 98, 033102 (2011) https://doi.org/10.1063/1.3543845

Abstract

View articletitled, Highly selective spectral response with enhanced responsivity of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>n</mi><mtext>-ZnO</mtext><mo>/</mo><mi>p</mi><mtext>-Si</mtext></mrow></math> radial heterojunction nanowire photodiodes

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Behind the change of the photoluminescence property of metal-coated ZnO nanowire arrays

Y. J. Fang; J. Sha; Z. L. Wang; Y. T. Wan; W. W. Xia; Y. W. Wang

Appl. Phys. Lett. 98, 033103 (2011) https://doi.org/10.1063/1.3543902

Abstract

View articletitled, Behind the change of the photoluminescence property of metal-coated ZnO nanowire arrays

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Energy and matter-efficient size-selective growth of thin quantum wires in a plasma

K. Ostrikov; H. Mehdipour

Appl. Phys. Lett. 98, 033104 (2011) https://doi.org/10.1063/1.3540645

Abstract

View articletitled, Energy and matter-efficient size-selective growth of thin quantum wires in a plasma

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Air-gap heterostructures

Ch. Heyn; M. Schmidt; S. Schwaiger; A. Stemmann; S. Mendach; W. Hansen

Appl. Phys. Lett. 98, 033105 (2011) https://doi.org/10.1063/1.3544047

Abstract

View articletitled, Air-gap heterostructures

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Direct image of a molecular orientation of a liquid crystal using directional polymerization of photoreactive mesogen

You-Jin Lee; Chang-Jae Yu; Young-Ki Kim; Soo In Jo; Jae-Hoon Kim

Appl. Phys. Lett. 98, 033106 (2011) https://doi.org/10.1063/1.3537959

Abstract

View articletitled, Direct image of a molecular orientation of a liquid crystal using directional polymerization of photoreactive mesogen

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Influence of hydrogen functionalization on thermal conductivity of graphene: Nonequilibrium molecular dynamics simulations

Shih-Kai Chien; Yue-Tzu Yang; Cha’o-Kuang Chen

Appl. Phys. Lett. 98, 033107 (2011) https://doi.org/10.1063/1.3543622

Abstract

View articletitled, Influence of hydrogen functionalization on thermal conductivity of graphene: Nonequilibrium molecular dynamics simulations

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Growth and electrical properties of Al-catalyzed Si nanowires

Seok-Youl Choi (최석열); Wayne Y. Fung; Wei Lu

Appl. Phys. Lett. 98, 033108 (2011) https://doi.org/10.1063/1.3544933

Abstract

View articletitled, Growth and electrical properties of Al-catalyzed Si nanowires

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ORGANIC ELECTRONICS AND PHOTONICS

Improving optical performance of low bandgap polymer solar cells by the two-mode moderate microcavity

Yongbing Long (龙拥兵)

Appl. Phys. Lett. 98, 033301 (2011) https://doi.org/10.1063/1.3541960

Abstract

View articletitled, Improving optical performance of low bandgap polymer solar cells by the two-mode moderate microcavity

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Efficient organic light-emitting devices with platinum-complex emissive layer

Xiaohui Yang; Fang-Iy Wu; Hanna Haverinen; Jian Li; Chien-Hong Cheng; Ghassan E. Jabbour

Appl. Phys. Lett. 98, 033302 (2011) https://doi.org/10.1063/1.3541447

Abstract

View articletitled, Efficient organic light-emitting devices with platinum-complex emissive layer

Supplementary Material

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Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures

R. Kalbitz; P. Frübing; R. Gerhard; D. M. Taylor

Appl. Phys. Lett. 98, 033303 (2011) https://doi.org/10.1063/1.3543632

Abstract

View articletitled, Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures

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Mobility determination using frequency dependence of imaginary part of impedance (Im Z) for organic and polymeric thin films

Durgesh C. Tripathi; Awnish K. Tripathi; Y. N. Mohapatra

Appl. Phys. Lett. 98, 033304 (2011) https://doi.org/10.1063/1.3544935

Abstract

View articletitled, Mobility determination using frequency dependence of imaginary part of impedance (Im Z) for organic and polymeric thin films

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DEVICE PHYSICS

Constant voltage stress induced charge trapping and detrapping characteristics of the ${Si}_{3} N_{4}$ uniaxial strained n-channel metal-oxide-semiconductor field-effect-transistor with fluorinated ${HfO}_{2} / SiON$ gate stack

Yung-Yu Chen; Chih-Ren Hsieh; Fang-Yu Chiu

Appl. Phys. Lett. 98, 033501 (2011) https://doi.org/10.1063/1.3541878

Abstract

View articletitled, Constant voltage stress induced charge trapping and detrapping characteristics of the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Si</mtext></mrow><mn>3</mn></msub><msub><mtext>N</mtext><mn>4</mn></msub></mrow></math> uniaxial strained n-channel metal-oxide-semiconductor field-effect-transistor with fluorinated <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>HfO</mtext></mrow><mn>2</mn></msub><mo>/</mo><mtext>SiON</mtext></mrow></math> gate stack

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Interface-modified random circuit breaker network model applicable to both bipolar and unipolar resistance switching

S. B. Lee; J. S. Lee; S. H. Chang; H. K. Yoo; B. S. Kang; B. Kahng; M.-J. Lee; C. J. Kim; T. W. Noh

Appl. Phys. Lett. 98, 033502 (2011) https://doi.org/10.1063/1.3543776

Abstract

View articletitled, Interface-modified random circuit breaker network model applicable to both bipolar and unipolar resistance switching

Supplementary Material

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Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors

J. Noborisaka; K. Nishiguchi; Y. Ono; H. Kageshima; A. Fujiwara

Appl. Phys. Lett. 98, 033503 (2011) https://doi.org/10.1063/1.3543849

Abstract

View articletitled, Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors

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Transition of dominant instability mechanism depending on negative gate bias under illumination in amorphous In-Ga-Zn-O thin film transistor

Himchan Oh; Sung-Min Yoon; Min Ki Ryu; Chi-Sun Hwang; Shinhyuk Yang; Sang-Hee Ko Park

Appl. Phys. Lett. 98, 033504 (2011) https://doi.org/10.1063/1.3540500

Abstract

View articletitled, Transition of dominant instability mechanism depending on negative gate bias under illumination in amorphous In-Ga-Zn-O thin film transistor

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Diagnosis of low-frequency noise sources in contact resistance of staggered organic transistors

Y. Xu; R. Gwoziecki; R. Coppard; M. Benwadih; T. Minari; K. Tsukagoshi; J. A. Chroboczek; F. Balestra; G. Ghibaudo

Appl. Phys. Lett. 98, 033505 (2011) https://doi.org/10.1063/1.3544583

Abstract

View articletitled, Diagnosis of low-frequency noise sources in contact resistance of staggered organic transistors

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On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

Qi Dai; Qifeng Shan; Jaehee Cho; E. Fred Schubert; Mary H. Crawford; Daniel D. Koleske; Min-Ho Kim; Yongjo Park

Appl. Phys. Lett. 98, 033506 (2011) https://doi.org/10.1063/1.3544584

Abstract

View articletitled, On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

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Low noise and wide bandwidth of NbN hot-electron bolometer mixers

Ivan Tretyakov; Sergey Ryabchun; Matvey Finkel; Anna Maslennikova; Natalia Kaurova; Anastasia Lobastova; Boris Voronov; Gregory Gol’tsman

Appl. Phys. Lett. 98, 033507 (2011) https://doi.org/10.1063/1.3544050

Abstract

View articletitled, Low noise and wide bandwidth of NbN hot-electron bolometer mixers

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INTERDISCIPLINARY AND GENERAL PHYSICS

Ultrafast three-dimensional x-ray computed tomography

Martina Bieberle; Frank Barthel; Hans-Jürgen Menz; Hans-Georg Mayer; Uwe Hampel

Appl. Phys. Lett. 98, 034101 (2011) https://doi.org/10.1063/1.3534806

Abstract

View articletitled, Ultrafast three-dimensional x-ray computed tomography

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COMMENTS

Comment on “The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN-InGaN photovoltaic devices” [Appl. Phys. Lett. 96, 051107 (2010)]

Jih-Yuan Chang (張誌原); Yen-Kuang Kuo (郭艷光)

Appl. Phys. Lett. 98, 036101 (2011) https://doi.org/10.1063/1.3544929

Extract

View articletitled, Comment on “The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN-InGaN photovoltaic devices” [Appl. Phys. Lett. 96, 051107 (2010)]

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

ORGANIC ELECTRONICS AND PHOTONICS

DEVICE PHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

COMMENTS

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