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LASERS, OPTICS, AND OPTOELECTRONICS

Observation of phase shifts in a vertical cavity quantum dot switch

C. Y. Jin; O. Kojima; T. Kita; O. Wada; M. Hopkinson

Appl. Phys. Lett. 98, 231101 (2011) https://doi.org/10.1063/1.3596704

Abstract

View articletitled, Observation of phase shifts in a vertical cavity quantum dot switch

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High-performance quantum cascade lasers with wide electroluminescence $(\sim 600 {cm}^{- 1})$ ⁠, operating in continuous-wave above $100 ° C$

Kazuue Fujita; Shinichi Furuta; Atsushi Sugiyama; Takahide Ochiai; Akio Ito; Tatsuo Dougakiuchi; Tadataka Edamura; Masamichi Yamanishi

Appl. Phys. Lett. 98, 231102 (2011) https://doi.org/10.1063/1.3596706

Abstract

View articletitled, High-performance quantum cascade lasers with wide electroluminescence <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mo>(</mo><mrow><mo>∼</mo><mn>600</mn><mtext> </mtext><msup><mrow><mtext>cm</mtext></mrow><mrow><mo>−</mo><mn>1</mn></mrow></msup></mrow><mo>)</mo></mrow></mrow></math>⁠, operating in continuous-wave above <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>100</mn><mtext> </mtext><mo>°</mo><mtext>C</mtext></mrow></math>

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Real time demonstration of high bitrate quantum random number generation with coherent laser light

T. Symul; S. M. Assad; P. K. Lam

Appl. Phys. Lett. 98, 231103 (2011) https://doi.org/10.1063/1.3597793

Abstract

View articletitled, Real time demonstration of high bitrate quantum random number generation with coherent laser light

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Resilience of gated avalanche photodiodes against bright illumination attacks in quantum cryptography

Z. L. Yuan; J. F. Dynes; A. J. Shields

Appl. Phys. Lett. 98, 231104 (2011) https://doi.org/10.1063/1.3597221

Abstract

View articletitled, Resilience of gated avalanche photodiodes against bright illumination attacks in quantum cryptography

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Tuneable polaritonics at room temperature with strongly coupled Tamm plasmon polaritons in metal/air-gap microcavities

C. Grossmann; C. Coulson; G. Christmann; I. Farrer; H. E. Beere; D. A. Ritchie; J. J. Baumberg

Appl. Phys. Lett. 98, 231105 (2011) https://doi.org/10.1063/1.3597304

Abstract

View articletitled, Tuneable polaritonics at room temperature with strongly coupled Tamm plasmon polaritons in metal/air-gap microcavities

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81 fJ/bit energy-to-data ratio of 850 nm vertical-cavity surface-emitting lasers for optical interconnects

P. Moser; W. Hofmann; P. Wolf; J. A. Lott; G. Larisch; A. Payusov; N. N. Ledentsov; D. Bimberg

Appl. Phys. Lett. 98, 231106 (2011) https://doi.org/10.1063/1.3597799

Abstract

View articletitled, 81 fJ/bit energy-to-data ratio of 850 nm vertical-cavity surface-emitting lasers for optical interconnects

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Type-II core/shell nanoparticle induced photorefractivity

Xiangping Li; Joel Van Embden; Richard A. Evans; Min Gu

Appl. Phys. Lett. 98, 231107 (2011) https://doi.org/10.1063/1.3596437

Abstract

View articletitled, Type-II core/shell nanoparticle induced photorefractivity

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Electrical injection, continuous wave operation of subwavelength-metallic-cavity lasers at 260 K

Kang Ding; Zhicheng Liu; Leijun Yin; Hua Wang; Ruibin Liu; Martin T. Hill; Milan J. H. Marell; Peter J. van Veldhoven; Richard Nötzel; C. Z. Ning

Appl. Phys. Lett. 98, 231108 (2011) https://doi.org/10.1063/1.3598961

Abstract

View articletitled, Electrical injection, continuous wave operation of subwavelength-metallic-cavity lasers at 260 K

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High-resolution heterodyne spectroscopy using a tunable quantum cascade laser around 3.5 THz

Y. Ren; J. N. Hovenier; R. Higgins; J. R. Gao; T. M. Klapwijk; S. C. Shi; B. Klein; T.-Y. Kao; Q. Hu; J. L. Reno

Appl. Phys. Lett. 98, 231109 (2011) https://doi.org/10.1063/1.3599518

Abstract

View articletitled, High-resolution heterodyne spectroscopy using a tunable quantum cascade laser around 3.5 THz

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Cascaded third harmonic generation in lithium niobate nanowaveguides

Alexander S. Solntsev; Andrey A. Sukhorukov; Dragomir N. Neshev; Rumen Iliew; Reinhard Geiss; Thomas Pertsch; Yuri S. Kivshar

Appl. Phys. Lett. 98, 231110 (2011) https://doi.org/10.1063/1.3597627

Abstract

View articletitled, Cascaded third harmonic generation in lithium niobate nanowaveguides

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To realize the optimal probe pulse length for detection of pulsed terahertz signal with spectral-encoding technique

Xiao-Yu Peng; Xin-Hai Zhang; Jing-Hua Teng; Hong-Cheng Guo; Yong-Lim Foo

Appl. Phys. Lett. 98, 231111 (2011) https://doi.org/10.1063/1.3598405

Abstract

View articletitled, To realize the optimal probe pulse length for detection of pulsed terahertz signal with spectral-encoding technique

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Low temperature near-field scanning optical microscopy on infrared and terahertz photonic-crystal quantum cascade lasers

I. C. Moldovan-Doyen; G. Xu; L. Greusard; G. Sevin; E. Strupiechonski; G. Beaudoin; I. Sagnes; S. P. Khanna; E. H. Linfield; A. G. Davies; R. Colombelli; Y. De Wilde

Appl. Phys. Lett. 98, 231112 (2011) https://doi.org/10.1063/1.3597411

Abstract

View articletitled, Low temperature near-field scanning optical microscopy on infrared and terahertz photonic-crystal quantum cascade lasers

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The transition from a TEM-like mode to a plasmonic mode in parallel-plate waveguides

Jingbo Liu; Rajind Mendis; Daniel M. Mittleman

Appl. Phys. Lett. 98, 231113 (2011) https://doi.org/10.1063/1.3598404

Abstract

View articletitled, The transition from a TEM-like mode to a plasmonic mode in parallel-plate waveguides

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Transition from strong to ultrastrong coupling regime in mid-infrared metal-dielectric-metal cavities

P. Jouy; A. Vasanelli; Y. Todorov; A. Delteil; G. Biasiol; L. Sorba; C. Sirtori

Appl. Phys. Lett. 98, 231114 (2011) https://doi.org/10.1063/1.3598432

Abstract

View articletitled, Transition from strong to ultrastrong coupling regime in mid-infrared metal-dielectric-metal cavities

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Reduction in thermal boundary conductance due to proton implantation in silicon and sapphire

Patrick E. Hopkins; Khalid Hattar; Thomas Beechem; Jon F. Ihlefeld; Douglas L. Medlin; Edward S. Piekos

Appl. Phys. Lett. 98, 231901 (2011) https://doi.org/10.1063/1.3592822

Abstract

View articletitled, Reduction in thermal boundary conductance due to proton implantation in silicon and sapphire

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The surface boundary conditions in GaN/AlGaN/GaN transistor heterostructures

M. Gladysiewicz; R. Kudrawiec; J. Misiewicz; G. Cywinski; M. Siekacz; P. Wolny; C. Skierbiszewski

Appl. Phys. Lett. 98, 231902 (2011) https://doi.org/10.1063/1.3592801

Abstract

View articletitled, The surface boundary conditions in GaN/AlGaN/GaN transistor heterostructures

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Induced magnetic anisotropy in lifted (Ga,Mn)As thin films

F. Greullet; L. Ebel; F. Münzhuber; S. Mark; G. V. Astakhov; T. Kießling; C. Schumacher; C. Gould; K. Brunner; W. Ossau; L. W. Molenkamp

Appl. Phys. Lett. 98, 231903 (2011) https://doi.org/10.1063/1.3597301

Abstract

View articletitled, Induced magnetic anisotropy in lifted (Ga,Mn)As thin films

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Surface damage on diamond membranes fabricated by ion implantation and lift-off

V. S. Drumm; A. D. C. Alves; B. A. Fairchild; K. Ganesan; J. C. McCallum; D. N. Jamieson; S. Prawer; S. Rubanov; R. Kalish; L. C. Feldman

Appl. Phys. Lett. 98, 231904 (2011) https://doi.org/10.1063/1.3597223

Abstract

View articletitled, Surface damage on diamond membranes fabricated by ion implantation and lift-off

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In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: Initial growth of ${HfO}_{2}$ on Si and Ge substrates

K. Devloo-Casier; J. Dendooven; K. F. Ludwig; G. Lekens; J. D’Haen; C. Detavernier

Appl. Phys. Lett. 98, 231905 (2011) https://doi.org/10.1063/1.3598433

Abstract

View articletitled, In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: Initial growth of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>HfO</mtext></mrow><mn>2</mn></msub></mrow></math> on Si and Ge substrates

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Medium-range icosahedral order in quasicrystal-forming ${Zr}_{2} Pd$ binary metallic glass

Li Huang; X. W. Fang; C. Z. Wang; M. J. Kramer; Z. J. Ding; K. M. Ho

Appl. Phys. Lett. 98, 231906 (2011) https://doi.org/10.1063/1.3597302

Abstract

View articletitled, Medium-range icosahedral order in quasicrystal-forming <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Zr</mtext></mrow><mn>2</mn></msub><mtext>Pd</mtext></mrow></math> binary metallic glass

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Effect of doping on global and local order in crystalline GeTe

Xavier Biquard; Milos Krbal; Alexander V. Kolobov; Paul Fons; Robert E. Simpson; Bérangère Hyot; Bernard André; Junji Tominaga; Tomoya Uruga

Appl. Phys. Lett. 98, 231907 (2011) https://doi.org/10.1063/1.3598384

Abstract

View articletitled, Effect of doping on global and local order in crystalline GeTe

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Ultrathin $(1 \times 2)$ -Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides

P. Laukkanen; M. P. J. Punkkinen; J. Lång; M. Tuominen; M. Kuzmin; V. Tuominen; J. Dahl; J. Adell; J. Sadowski; J. Kanski; V. Polojärvi; J. Pakarinen; K. Kokko; M. Guina; M. Pessa; I. J. Väyrynen

Appl. Phys. Lett. 98, 231908 (2011) https://doi.org/10.1063/1.3596702

Abstract

View articletitled, Ultrathin <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mo>(</mo><mrow><mn>1</mn><mo>×</mo><mn>2</mn></mrow><mo>)</mo></mrow></mrow></math>-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides

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Enhancement of the magneto-optical performance of $Sr ({Ti}_{0.6 - x} {Ga}_{x} {Fe}_{0.4}) O_{3}$ perovskite films by Ga substitution

Peng Jiang; Lei Bi; Dong Hun Kim; G. F. Dionne; C. A. Ross

Appl. Phys. Lett. 98, 231909 (2011) https://doi.org/10.1063/1.3595337

Abstract

View articletitled, Enhancement of the magneto-optical performance of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mtext>Sr</mtext><mrow><mo>(</mo><mrow><msub><mrow><mtext>Ti</mtext></mrow><mrow><mn>0.6</mn><mo>−</mo><mtext>x</mtext></mrow></msub><msub><mrow><mtext>Ga</mtext></mrow><mtext>x</mtext></msub><msub><mrow><mtext>Fe</mtext></mrow><mrow><mn>0.4</mn></mrow></msub></mrow><mo>)</mo></mrow><msub><mtext>O</mtext><mn>3</mn></msub></mrow></math> perovskite films by Ga substitution

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Phase change behavior in titanium-doped ${Ge}_{2} {Sb}_{2} {Te}_{5}$ films

S. J. Wei; H. F. Zhu; K. Chen; D. Xu; J. Li; F. X. Gan; X. Zhang; Y. J. Xia; G. H. Li

Appl. Phys. Lett. 98, 231910 (2011) https://doi.org/10.1063/1.3597617

Abstract

View articletitled, Phase change behavior in titanium-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Ge</mtext></mrow><mn>2</mn></msub><msub><mrow><mtext>Sb</mtext></mrow><mn>2</mn></msub><msub><mrow><mtext>Te</mtext></mrow><mn>5</mn></msub></mrow></math> films

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Determination of the anisotropic elastic properties of ${Ge}_{1} {Sb}_{2} {Te}_{4}$

Arnaud Marmier; Krisztian Kohary; C. David Wright

Appl. Phys. Lett. 98, 231911 (2011) https://doi.org/10.1063/1.3598934

Abstract

View articletitled, Determination of the anisotropic elastic properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Ge</mtext></mrow><mn>1</mn></msub><msub><mrow><mtext>Sb</mtext></mrow><mn>2</mn></msub><msub><mrow><mtext>Te</mtext></mrow><mn>4</mn></msub></mrow></math>

Supplementary Material

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Impact of carbon coimplantation on boron behavior in silicon: Carbon–boron coclustering and suppression of boron diffusion

Y. Shimizu; H. Takamizawa; K. Inoue; T. Toyama; Y. Nagai; N. Okada; M. Kato; H. Uchida; F. Yano; T. Tsunomura; A. Nishida; T. Mogami

Appl. Phys. Lett. 98, 232101 (2011) https://doi.org/10.1063/1.3597303

Abstract

View articletitled, Impact of carbon coimplantation on boron behavior in silicon: Carbon–boron coclustering and suppression of boron diffusion

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Correlation of the change in transfer characteristics with the interfacial trap densities of amorphous In–Ga–Zn–O thin film transistors under light illumination

Jeong Hwan Kim; Un Ki Kim; Yoon Jang Chung; Cheol Seong Hwang

Appl. Phys. Lett. 98, 232102 (2011) https://doi.org/10.1063/1.3597299

Abstract

View articletitled, Correlation of the change in transfer characteristics with the interfacial trap densities of amorphous In–Ga–Zn–O thin film transistors under light illumination

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Tuning laser-induced band gaps in graphene

Hernán L. Calvo; Horacio M. Pastawski; Stephan Roche; Luis E. F. Foa Torres

Appl. Phys. Lett. 98, 232103 (2011) https://doi.org/10.1063/1.3597412

Abstract

View articletitled, Tuning laser-induced band gaps in graphene

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Band alignment between GeTe and ${SiO}_{2}$ /metals for characterization of junctions in nonvolatile resistance change elements

E. K. Chua; L. P. Shi; M. H. Li; R. Zhao; T. C. Chong; T. E. Schlesinger; J. A. Bain

Appl. Phys. Lett. 98, 232104 (2011) https://doi.org/10.1063/1.3599057

Abstract

View articletitled, Band alignment between GeTe and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>SiO</mtext></mrow><mn>2</mn></msub></mrow></math>/metals for characterization of junctions in nonvolatile resistance change elements

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Charge modulated interfacial conductivity in ${SrTiO}_{3}$ -based oxide heterostructures

Y. Z. Chen; E. Stamate; N. Pryds; J. R. Sun; B. G. Shen; S. Linderoth

Appl. Phys. Lett. 98, 232105 (2011) https://doi.org/10.1063/1.3598391

Abstract

View articletitled, Charge modulated interfacial conductivity in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>SrTiO</mtext></mrow><mn>3</mn></msub></mrow></math>-based oxide heterostructures

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Stress evolution in surrounding silicon of Cu-filled through-silicon via undergoing thermal annealing by multiwavelength micro-Raman spectroscopy

W. S. Kwon; D. T. Alastair; K. H. Teo; S. Gao; T. Ueda; T. Ishigaki; K. T. Kang; W. S. Yoo

Appl. Phys. Lett. 98, 232106 (2011) https://doi.org/10.1063/1.3596443

Abstract

View articletitled, Stress evolution in surrounding silicon of Cu-filled through-silicon via undergoing thermal annealing by multiwavelength micro-Raman spectroscopy

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XPS study of Sb-/In-doping and surface pinning effects on the Fermi level in ${SnO}_{2}$ (101) thin films

T. Nagata; O. Bierwagen; M. E. White; M. Y. Tsai; Y. Yamashita; H. Yoshikawa; N. Ohashi; K. Kobayashi; T. Chikyow; J. S. Speck

Appl. Phys. Lett. 98, 232107 (2011) https://doi.org/10.1063/1.3596449

Abstract

View articletitled, XPS study of Sb-/In-doping and surface pinning effects on the Fermi level in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>SnO</mtext></mrow><mn>2</mn></msub></mrow></math> (101) thin films

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A physical model for bipolar oxide-based resistive switching memory based on ion-transport-recombination effect

Bin Gao; Jinfeng Kang; Lifeng Liu; Xiaoyan Liu; Bin Yu

Appl. Phys. Lett. 98, 232108 (2011) https://doi.org/10.1063/1.3599490

Abstract

View articletitled, A physical model for bipolar oxide-based resistive switching memory based on ion-transport-recombination effect

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Suppression of in-plane tunneling anisotropic magnetoresistance effect in ${Co}_{2} MnSi / MgO / n$ -GaAs and CoFe/MgO/n-GaAs junctions by inserting a MgO barrier

Takafumi Akiho; Tetsuya Uemura; Masanobu Harada; Ken-ichi Matsuda; Masafumi Yamamoto

Appl. Phys. Lett. 98, 232109 (2011) https://doi.org/10.1063/1.3595311

Abstract

View articletitled, Suppression of in-plane tunneling anisotropic magnetoresistance effect in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Co</mtext></mrow><mn>2</mn></msub><mtext>MnSi</mtext><mo>/</mo><mtext>MgO</mtext><mo>/</mo><mtext>n</mtext></mrow></math>-GaAs and CoFe/MgO/n-GaAs junctions by inserting a MgO barrier

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Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and $c + a$ during the physical vapor transport growth of 4H–SiC

M. Dudley; F. Wu; H. Wang; S. Byrappa; B. Raghothamachar; G. Choi; S. Sun; E. K. Sanchez; D. Hansen; R. Drachev; S. G. Mueller; M. J. Loboda

Appl. Phys. Lett. 98, 232110 (2011) https://doi.org/10.1063/1.3597226

Abstract

View articletitled, Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mtext>c</mtext><mo>+</mo><mtext>a</mtext></mrow></math> during the physical vapor transport growth of 4H–SiC

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Correction factor in nondiffusive Hall magnetometry

M. Cerchez; T. Heinzel

Appl. Phys. Lett. 98, 232111 (2011) https://doi.org/10.1063/1.3597619

Abstract

View articletitled, Correction factor in nondiffusive Hall magnetometry

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Acceptors in ZnO nanocrystals

S. T. Teklemichael; W. M. Hlaing Oo; M. D. McCluskey; E. D. Walter; D. W. Hoyt

Appl. Phys. Lett. 98, 232112 (2011) https://doi.org/10.1063/1.3598411

Abstract

View articletitled, Acceptors in ZnO nanocrystals

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Sulfur passivation effect on ${HfO}_{2} / GaAs$ interface: A first-principles study

Weichao Wang; Cheng Gong; Bin Shan; Robert M. Wallace; Kyeongjae Cho

Appl. Phys. Lett. 98, 232113 (2011) https://doi.org/10.1063/1.3597219

Abstract

View articletitled, Sulfur passivation effect on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>HfO</mtext></mrow><mn>2</mn></msub><mo>/</mo><mtext>GaAs</mtext></mrow></math> interface: A first-principles study

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First principles calculation of polarization induced interfacial charges in GaN/AlN heterostructures

Rohan Mishra; Oscar D. Restrepo; Siddharth Rajan; Wolfgang Windl

Appl. Phys. Lett. 98, 232114 (2011) https://doi.org/10.1063/1.3598399

Abstract

View articletitled, First principles calculation of polarization induced interfacial charges in GaN/AlN heterostructures

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Radiation induced control of electric field in Au/CdTe/In structures

J. Franc; V. Dědič; P. J. Sellin; R. Grill; P. Veeramani

Appl. Phys. Lett. 98, 232115 (2011) https://doi.org/10.1063/1.3598414

Abstract

View articletitled, Radiation induced control of electric field in Au/CdTe/In structures

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Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system

Chongyun Jiang; Yonghai Chen; Hui Ma; Jinling Yu; Yu Liu

Appl. Phys. Lett. 98, 232116 (2011) https://doi.org/10.1063/1.3596467

Abstract

View articletitled, Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system

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MAGNETISM AND SUPERCONDUCTIVITY

Epitaxial growth of the high temperature ferromagnetic semiconductor ${Fe}_{1.5} {Ti}_{0.5} O_{3}$ on silicon-compatible substrate

Ali Hamie; Elena Popova; Yves Dumont; Ekaterina Chikoidze; Bénédicte Warot-Fonrose; Bruno Berini; Niels Keller

Appl. Phys. Lett. 98, 232501 (2011) https://doi.org/10.1063/1.3595271

Abstract

View articletitled, Epitaxial growth of the high temperature ferromagnetic semiconductor <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Fe</mtext></mrow><mrow><mn>1.5</mn></mrow></msub><msub><mrow><mtext>Ti</mtext></mrow><mrow><mn>0.5</mn></mrow></msub><msub><mtext>O</mtext><mn>3</mn></msub></mrow></math> on silicon-compatible substrate

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Anisotropy induced large exchange bias behavior in ball milled Ni–Co–Mn–Sb alloys

Ajaya K. Nayak; Roshnee Sahoo; K. G. Suresh; A. K. Nigam; X. Chen; R. V. Ramanujan

Appl. Phys. Lett. 98, 232502 (2011) https://doi.org/10.1063/1.3597305

Abstract

View articletitled, Anisotropy induced large exchange bias behavior in ball milled Ni–Co–Mn–Sb alloys

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Significant spin polarization of ${Co}_{2} MnGa$ Heusler thin films on MgO(100) measured by ultraviolet photoemission spectroscopy

Michaela Hahn; Gerd Schönhense; Elena Arbelo Jorge; Martin Jourdan

Appl. Phys. Lett. 98, 232503 (2011) https://doi.org/10.1063/1.3597315

Abstract

View articletitled, Significant spin polarization of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Co</mtext></mrow><mn>2</mn></msub><mtext>MnGa</mtext></mrow></math> Heusler thin films on MgO(100) measured by ultraviolet photoemission spectroscopy

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Finite tunnel magnetoresistance at the compensation point of ${Sm}_{1 - x} {Gd}_{x} {Al}_{2}$ ⁠, a ferromagnetic electrode with zero magnetization

M. Da Silva; K. Dumesnil; C. Dufour; M. Hehn; D. Pierre; D. Lacour; F. Montaigne; G. Lengaigne; S. Robert

Appl. Phys. Lett. 98, 232504 (2011) https://doi.org/10.1063/1.3597625

Abstract

View articletitled, Finite tunnel magnetoresistance at the compensation point of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Sm</mtext></mrow><mrow><mn>1</mn><mo>−</mo><mtext>x</mtext></mrow></msub><msub><mrow><mtext>Gd</mtext></mrow><mtext>x</mtext></msub><msub><mrow><mtext>Al</mtext></mrow><mn>2</mn></msub></mrow></math>⁠, a ferromagnetic electrode with zero magnetization

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Power generation transducer from magnetostrictive materials

Hui Zhang

Appl. Phys. Lett. 98, 232505 (2011) https://doi.org/10.1063/1.3597222

Abstract

View articletitled, Power generation transducer from magnetostrictive materials

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Enhanced magnetoresistance in naturally oxidized MgO-based magnetic tunnel junctions with ferromagnetic CoFe/CoFeB bilayers

D. K. Schreiber; Y-S Choi; Yuzi Liu; Ann N. Chiaramonti; David N. Seidman; A. K. Petford-Long

Appl. Phys. Lett. 98, 232506 (2011) https://doi.org/10.1063/1.3597224

Abstract

View articletitled, Enhanced magnetoresistance in naturally oxidized MgO-based magnetic tunnel junctions with ferromagnetic CoFe/CoFeB bilayers

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Coercivity of ordered arrays of magnetic Co nanowires with controlled variable lengths

L. G. Vivas; R. Yanes; O. Chubykalo-Fesenko; M. Vazquez

Appl. Phys. Lett. 98, 232507 (2011) https://doi.org/10.1063/1.3597227

Abstract

View articletitled, Coercivity of ordered arrays of magnetic Co nanowires with controlled variable lengths

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Strongly quadrature-dependent noise in superconducting microresonators measured at the vacuum-noise limit

J. Gao; L. R. Vale; J. A. B. Mates; D. R. Schmidt; G. C. Hilton; K. D. Irwin; F. Mallet; M. A. Castellanos-Beltran; K. W. Lehnert; J. Zmuidzinas; H. G. Leduc

Appl. Phys. Lett. 98, 232508 (2011) https://doi.org/10.1063/1.3597156

Abstract

View articletitled, Strongly quadrature-dependent noise in superconducting microresonators measured at the vacuum-noise limit

Supplementary Material

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Magnetocaloric effect in layered ${NdMn}_{2} {Ge}_{0.4} {Si}_{1.6}$

J. L. Wang; S. J. Campbell; J. M. Cadogan; A. J. Studer; R. Zeng; S. X. Dou

Appl. Phys. Lett. 98, 232509 (2011) https://doi.org/10.1063/1.3599456

Abstract

View articletitled, Magnetocaloric effect in layered <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>NdMn</mtext></mrow><mn>2</mn></msub><msub><mrow><mtext>Ge</mtext></mrow><mrow><mn>0.4</mn></mrow></msub><msub><mrow><mtext>Si</mtext></mrow><mrow><mn>1.6</mn></mrow></msub></mrow></math>

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Large change in perpendicular magnetic anisotropy induced by an electric field in FePd ultrathin films

F. Bonell; S. Murakami; Y. Shiota; T. Nozaki; T. Shinjo; Y. Suzuki

Appl. Phys. Lett. 98, 232510 (2011) https://doi.org/10.1063/1.3599492

Abstract

View articletitled, Large change in perpendicular magnetic anisotropy induced by an electric field in FePd ultrathin films

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Direct observation of antiferromagnetically oriented spin vortex states in magnetic multilayer elements

S. Wintz; T. Strache; M. Körner; M. Fritzsche; D. Markó; I. Mönch; R. Mattheis; J. Raabe; C. Quitmann; J. McCord; A. Erbe; J. Fassbender

Appl. Phys. Lett. 98, 232511 (2011) https://doi.org/10.1063/1.3597297

Abstract

View articletitled, Direct observation of antiferromagnetically oriented spin vortex states in magnetic multilayer elements

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Asymmetric domain wall depinning under current in spin valves with perpendicular anisotropy

S. Park; N. M. Nguyen; C. Burrowes; E. E. Fullerton; C. Chappert; L. Prejebeanu; F. Garcia-Sanchez; D. Ravelosona

Appl. Phys. Lett. 98, 232512 (2011) https://doi.org/10.1063/1.3592844

Abstract

View articletitled, Asymmetric domain wall depinning under current in spin valves with perpendicular anisotropy

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Switching of saturation magnetization by carrier injection in ${YBa}_{2} {Cu}_{3} O_{7 - δ} / α {-Fe}_{2} O_{3} / Nb - {SrTiO}_{3}$ junctions

Yuansha Chen; Guijun Lian; Guangcheng Xiong; T. Venkatesan

Appl. Phys. Lett. 98, 232513 (2011) https://doi.org/10.1063/1.3589351

Abstract

View articletitled, Switching of saturation magnetization by carrier injection in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>YBa</mtext></mrow><mn>2</mn></msub><msub><mrow><mtext>Cu</mtext></mrow><mn>3</mn></msub><msub><mtext>O</mtext><mrow><mn>7</mn><mo>−</mo><mi>δ</mi></mrow></msub><mo>/</mo><mi>α</mi><msub><mrow><mtext>-Fe</mtext></mrow><mn>2</mn></msub><msub><mtext>O</mtext><mn>3</mn></msub><mo>/</mo><mtext>Nb</mtext><mo>–</mo><msub><mrow><mtext>SrTiO</mtext></mrow><mn>3</mn></msub></mrow></math> junctions

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DIELECTRICS AND FERROELECTRICITY

Reduced leakage current in ${BiFeO}_{3}$ thin films with rectifying contacts

Yao Shuai; Shengqiang Zhou; Stephan Streit; Helfried Reuther; Danilo Bürger; Stefan Slesazeck; Thomas Mikolajick; Manfred Helm; Heidemarie Schmidt

Appl. Phys. Lett. 98, 232901 (2011) https://doi.org/10.1063/1.3597794

Abstract

View articletitled, Reduced leakage current in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>BiFeO</mtext></mrow><mn>3</mn></msub></mrow></math> thin films with rectifying contacts

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Bias controlled electrostrictive longitudinal resonance in X-cut lithium niobate thin films resonator

M. Pijolat; C. Deguet; C. Billard; D. Mercier; A. Reinhardt; M. Aïd; S. Ballandras; E. Defay

Appl. Phys. Lett. 98, 232902 (2011) https://doi.org/10.1063/1.3598410

Abstract

View articletitled, Bias controlled electrostrictive longitudinal resonance in X-cut lithium niobate thin films resonator

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Direct trap observation in stressed ${SiO}_{2}$ with electrically detected magnetic resonance

Yoshiki Yonamoto; Naotoshi Akamatsu

Appl. Phys. Lett. 98, 232903 (2011) https://doi.org/10.1063/1.3595316

Abstract

View articletitled, Direct trap observation in stressed <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>SiO</mtext></mrow><mn>2</mn></msub></mrow></math> with electrically detected magnetic resonance

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Direct and converse effect in magnetoelectric laminate composites

Kyung-Hoon Cho; Shashank Priya

Appl. Phys. Lett. 98, 232904 (2011) https://doi.org/10.1063/1.3584863

Abstract

View articletitled, Direct and converse effect in magnetoelectric laminate composites

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Compositional dependence of trap density and origin in thin silicon oxynitride film investigated using spin dependent Poole–Frenkel current

Yoshiki Yonamoto; Yutaka Inaba; Naotoshi Akamatsu

Appl. Phys. Lett. 98, 232905 (2011) https://doi.org/10.1063/1.3598393

Abstract

View articletitled, Compositional dependence of trap density and origin in thin silicon oxynitride film investigated using spin dependent Poole–Frenkel current

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Detection of nitrogen related traps in nitrided/reoxidized silicon dioxide films with thermally stimulated current and maximum entropy method

Yoshiki Yonamoto; Yutaka Inaba; Naotosih Akamatsu

Appl. Phys. Lett. 98, 232906 (2011) https://doi.org/10.1063/1.3596455

Abstract

View articletitled, Detection of nitrogen related traps in nitrided/reoxidized silicon dioxide films with thermally stimulated current and maximum entropy method

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NANOSCALE SCIENCE AND DESIGN

Single InGaN nanodisk light emitting diodes as full-color subwavelength light sources

Yu-Jung Lu (呂宥蓉); Hon-Way Lin (林弘偉); Hung-Ying Chen (陳虹穎); Yu-Chen Yang (楊右丞); Shangjr Gwo (果尚志)

Appl. Phys. Lett. 98, 233101 (2011) https://doi.org/10.1063/1.3597211

Abstract

View articletitled, Single InGaN nanodisk light emitting diodes as full-color subwavelength light sources

Supplementary Material

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Dispersion of electron $g$ -factor with optical transition energy in (In,Ga)As/GaAs self-assembled quantum dots

A. Schwan; B.-M. Meiners; A. B. Henriques; A. D. B. Maia; A. A. Quivy; S. Spatzek; S. Varwig; D. R. Yakovlev; M. Bayer

Appl. Phys. Lett. 98, 233102 (2011) https://doi.org/10.1063/1.3588413

Abstract

View articletitled, Dispersion of electron <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">g</mi></math>-factor with optical transition energy in (In,Ga)As/GaAs self-assembled quantum dots

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Ultrafast spectroscopy with a scanning tunneling microscope

Ian Moult; Marie Herve; Yan Pennec

Appl. Phys. Lett. 98, 233103 (2011) https://doi.org/10.1063/1.3597351

Abstract

View articletitled, Ultrafast spectroscopy with a scanning tunneling microscope

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In situ compression study of taper-free metallic glass nanopillars

O. V. Kuzmin; Y. T. Pei; J. T. M. De Hosson

Appl. Phys. Lett. 98, 233104 (2011) https://doi.org/10.1063/1.3598400

Abstract

View articletitled, In situ compression study of taper-free metallic glass nanopillars

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Force mode dip-pen nanolithography on soft polydimethylsiloxane surface

Haijun Yang; Guangxia Shen; Shouwu Guo

Appl. Phys. Lett. 98, 233105 (2011) https://doi.org/10.1063/1.3597158

Abstract

View articletitled, Force mode dip-pen nanolithography on soft polydimethylsiloxane surface

Supplementary Material

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Three-dimensional nanojunction device models for photovoltaics

Artit Wangperawong; Stacey F. Bent

Appl. Phys. Lett. 98, 233106 (2011) https://doi.org/10.1063/1.3595411

Abstract

View articletitled, Three-dimensional nanojunction device models for photovoltaics

Supplementary Material

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Single-wire photodetectors based on InGaN/GaN radial quantum wells in GaN wires grown by catalyst-free metal-organic vapor phase epitaxy

A. De Luna Bugallo; L. Rigutti; G. Jacopin; F. H. Julien; C. Durand; X. J. Chen; D. Salomon; J. Eymery; M. Tchernycheva

Appl. Phys. Lett. 98, 233107 (2011) https://doi.org/10.1063/1.3596446

Abstract

View articletitled, Single-wire photodetectors based on InGaN/GaN radial quantum wells in GaN wires grown by catalyst-free metal-organic vapor phase epitaxy

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Tunable metal–insulator transitions in bilayer graphene by thermal annealing

Gopinadhan Kalon; Young Jun Shin; Hyunsoo Yang

Appl. Phys. Lett. 98, 233108 (2011) https://doi.org/10.1063/1.3598403

Abstract

View articletitled, Tunable metal–insulator transitions in bilayer graphene by thermal annealing

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{111} local configurations: The main source of silicon defects during solid phase epitaxial regrowth modeled by lattice kinetic Monte Carlo

Ignacio Martin-Bragado

Appl. Phys. Lett. 98, 233109 (2011) https://doi.org/10.1063/1.3596466

Abstract

View articletitled, {111} local configurations: The main source of silicon defects during solid phase epitaxial regrowth modeled by lattice kinetic Monte Carlo

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Nanopatterning on rough surfaces using optically trapped microspheres

Y.-C. Tsai; R. Fardel; C. B. Arnold

Appl. Phys. Lett. 98, 233110 (2011) https://doi.org/10.1063/1.3598427

Abstract

View articletitled, Nanopatterning on rough surfaces using optically trapped microspheres

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On the thermal conductivity of particulate nanocomposites

J. Ordonez-Miranda; Ronggui Yang; J. J. Alvarado-Gil

Appl. Phys. Lett. 98, 233111 (2011) https://doi.org/10.1063/1.3593387

Abstract

View articletitled, On the thermal conductivity of particulate nanocomposites

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ORGANIC ELECTRONICS AND PHOTONICS

Polarization splitting in polariton electroluminescence from an organic semiconductor microcavity with metallic reflectors

Grant H. Lodden; Russell J. Holmes

Appl. Phys. Lett. 98, 233301 (2011) https://doi.org/10.1063/1.3599058

Abstract

View articletitled, Polarization splitting in polariton electroluminescence from an organic semiconductor microcavity with metallic reflectors

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Theoretical analysis of carrier mobility in organic field-effect transistors

Yong Xu; Francis Balestra; Gerard Ghibaudo

Appl. Phys. Lett. 98, 233302 (2011) https://doi.org/10.1063/1.3599485

Abstract

View articletitled, Theoretical analysis of carrier mobility in organic field-effect transistors

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Low-loss asymmetric strip-loaded slot waveguides in silicon-on-insulator

Ran Ding; Tom Baehr-Jones; Woo-Joong Kim; Bryan Boyko; Richard Bojko; Alexander Spott; Andrew Pomerene; Craig Hill; Wesley Reinhardt; Michael Hochberg

Appl. Phys. Lett. 98, 233303 (2011) https://doi.org/10.1063/1.3597798

Abstract

View articletitled, Low-loss asymmetric strip-loaded slot waveguides in silicon-on-insulator

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Diindenoperylene as ambipolar semiconductor: Influence of electrode materials and mobility asymmetry in organic field-effect transistors

Matthias Horlet; Michael Kraus; Wolfgang Brütting; Andreas Opitz

Appl. Phys. Lett. 98, 233304 (2011) https://doi.org/10.1063/1.3598423

Abstract

View articletitled, Diindenoperylene as ambipolar semiconductor: Influence of electrode materials and mobility asymmetry in organic field-effect transistors

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DEVICE PHYSICS

Theoretical investigation of kinetics of a ${Cu}_{2} S$ -based gap-type atomic switch

Alpana Nayak; Tohru Tsuruoka; Kazuya Terabe; Tsuyoshi Hasegawa; Masakazu Aono

Appl. Phys. Lett. 98, 233501 (2011) https://doi.org/10.1063/1.3597154

Abstract

View articletitled, Theoretical investigation of kinetics of a <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Cu</mtext></mrow><mn>2</mn></msub><mtext>S</mtext></mrow></math>-based gap-type atomic switch

Supplementary Material

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Spectroscopic charge pumping investigation of the amphoteric nature of $Si / {SiO}_{2}$ interface states

J. T. Ryan; L. C. Yu; J. H. Han; J. J. Kopanski; K. P. Cheung; F. Zhang; C. Wang; J. P. Campbell; J. S. Suehle

Appl. Phys. Lett. 98, 233502 (2011) https://doi.org/10.1063/1.3597298

Abstract

View articletitled, Spectroscopic charge pumping investigation of the amphoteric nature of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mtext>Si</mtext><mo>/</mo><msub><mrow><mtext>SiO</mtext></mrow><mn>2</mn></msub></mrow></math> interface states

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Detection of organophosphorus compound based on a sol–gel silica planar waveguide doped with a green fluorescent protein and an organophosphorus hydrolase

Y. Enami; K. Tsuchiya; S. Suye

Appl. Phys. Lett. 98, 233503 (2011) https://doi.org/10.1063/1.3596448

Abstract

View articletitled, Detection of organophosphorus compound based on a sol–gel silica planar waveguide doped with a green fluorescent protein and an organophosphorus hydrolase

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Diffraction less and strongly confined surface acoustic waves in domain inverted ${LiNbO}_{3}$ superlattices

Didit Yudistira; Sarah Benchabane; Davide Janner; Valerio Pruneri

Appl. Phys. Lett. 98, 233504 (2011) https://doi.org/10.1063/1.3599569

Abstract

View articletitled, Diffraction less and strongly confined surface acoustic waves in domain inverted <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>LiNbO</mtext></mrow><mn>3</mn></msub></mrow></math> superlattices

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A ZnO cross-bar array resistive random access memory stacked with heterostructure diodes for eliminating the sneak current effect

Jung Won Seo; Seung Jae Baik; Sang Jung Kang; Yun Ho Hong; Ji Hwan Yang; Koeng Su Lim

Appl. Phys. Lett. 98, 233505 (2011) https://doi.org/10.1063/1.3599707

Abstract

View articletitled, A ZnO cross-bar array resistive random access memory stacked with heterostructure diodes for eliminating the sneak current effect

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Extraction of additional interfacial states of silicon nanowire field-effect transistors

Soshi Sato; Wei Li; Kuniyuki Kakushima; Kenji Ohmori; Kenji Natori; Keisaku Yamada; Hiroshi Iwai

Appl. Phys. Lett. 98, 233506 (2011) https://doi.org/10.1063/1.3598402

Abstract

View articletitled, Extraction of additional interfacial states of silicon nanowire field-effect transistors

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BIOPHYSICS AND BIO-INSPIRED SYSTEMS

Photothermolysis of immobilized bacteria on gold nanograil arrays

Soo Kyung Kim; Chul-Joon Heo; Jong Young Choi; Su Yeon Lee; Se Gyu Jang; Jae Won Shim; Tae Seok Seo; Seung-Man Yang

Appl. Phys. Lett. 98, 233701 (2011) https://doi.org/10.1063/1.3598445

Abstract

View articletitled, Photothermolysis of immobilized bacteria on gold nanograil arrays

Supplementary Material

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INTERDISCIPLINARY AND GENERAL PHYSICS

Development of a magnetic resonance microscope using a high $T_{c}$ bulk superconducting magnet

Kyohei Ogawa; Takashi Nakamura; Yasuhiko Terada; Katsumi Kose; Tomoyuki Haishi

Appl. Phys. Lett. 98, 234101 (2011) https://doi.org/10.1063/1.3598440

Abstract

View articletitled, Development of a magnetic resonance microscope using a high <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>T</mi><mi>c</mi></msub></mrow></math> bulk superconducting magnet

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Steering of an ultrarelativistic proton beam by a bent germanium crystal

D. De Salvador; E. Bagli; O. Lytovchenko; A. Mazzolari; S. Carturan; G. Della Mea; V. Guidi; M. Bazzan; N. Argiolas; A. Carnera; D. Bolognini; S. Hasan; M. Prest; E. Vallazza

Appl. Phys. Lett. 98, 234102 (2011) https://doi.org/10.1063/1.3596709

Abstract

View articletitled, Steering of an ultrarelativistic proton beam by a bent germanium crystal

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Observation of band gaps in the gigahertz range and deaf bands in a hypersonic aluminum nitride phononic crystal slab

M. Gorisse; S. Benchabane; G. Teissier; C. Billard; A. Reinhardt; V. Laude; E. Defaÿ; M. Aïd

Appl. Phys. Lett. 98, 234103 (2011) https://doi.org/10.1063/1.3598425

Abstract

View articletitled, Observation of band gaps in the gigahertz range and deaf bands in a hypersonic aluminum nitride phononic crystal slab

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Strategies for dynamic soft-landing in capacitive microelectromechanical switches

Ankit Jain; Pradeep R. Nair; Muhammad A. Alam

Appl. Phys. Lett. 98, 234104 (2011) https://doi.org/10.1063/1.3598960

Abstract

View articletitled, Strategies for dynamic soft-landing in capacitive microelectromechanical switches

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ERRATA

Erratum: “Atom probe analysis of interfacial abruptness and clustering within a single ${In}_{x} {Ga}_{1 - x} N$ quantum well device on semipolar $(10_{\bar{1} \bar{1}})$ GaN substrate” [Appl. Phys. Lett. 98, 191903 (2011)]

T. J. Prosa; P. H. Clifton; H. Zhong; A. Tyagi; R. Shivaraman; S. P. DenBaars; S. Nakamura; J. S. Speck

Appl. Phys. Lett. 98, 239901 (2011) https://doi.org/10.1063/1.3598937

Extract

View articletitled, Erratum: “Atom probe analysis of interfacial abruptness and clustering within a single <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>In</mtext></mrow><mtext>x</mtext></msub><msub><mrow><mtext>Ga</mtext></mrow><mrow><mn>1</mn><mo>−</mo><mtext>x</mtext></mrow></msub><mtext>N</mtext></mrow></math> quantum well device on semipolar <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mo>(</mo><mrow><msub><mrow><mn>10</mn></mrow><mrow><mover accent="true"><mn>1</mn><mo stretchy="false">¯</mo></mover><mover accent="true"><mn>1</mn><mo stretchy="false">¯</mo></mover></mrow></msub></mrow><mo>)</mo></mrow></mrow></math> GaN substrate” [Appl. Phys. Lett. 98, 191903 (2011)]

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Addendum: “Attachment losses of high Q oscillators” [Appl. Phys. Lett. 85, 482 (2004)]

Douglas M. Photiadis

Appl. Phys. Lett. 98, 239902 (2011) https://doi.org/10.1063/1.3598940

Extract

View articletitled, Addendum: “Attachment losses of high Q oscillators” [Appl. Phys. Lett. 85, 482 (2004)]

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Erratum: “Temperature dependent x-ray diffraction study of lightly doped ${Na}_{x} {WO}_{3}$ ” [Appl. Phys. Lett. 98, 121910 (2011)]

Sanhita Paul; G. D. Mukherjee; Anirudha Ghosh; S. Oishi; Satyabrata Raj

Appl. Phys. Lett. 98, 239903 (2011) https://doi.org/10.1063/1.3599705

Extract

View articletitled, Erratum: “Temperature dependent x-ray diffraction study of lightly doped <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Na</mtext></mrow><mi>x</mi></msub><msub><mrow><mtext>WO</mtext></mrow><mn>3</mn></msub></mrow></math>” [Appl. Phys. Lett. 98, 121910 (2011)]

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

ORGANIC ELECTRONICS AND PHOTONICS

DEVICE PHYSICS

BIOPHYSICS AND BIO-INSPIRED SYSTEMS

INTERDISCIPLINARY AND GENERAL PHYSICS

ERRATA

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