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Issues

Volume 97, Issue 22
29 November 2010
Applied Physics Letters Cover Image for Volume 97, Issue 22
All Issues
ISSN 0003-6951
EISSN 1077-3118

LASERS, OPTICS, AND OPTOELECTRONICS

Chemical coating of large-area Au nanoparticle two-dimensional arrays as plasmon-resonant optics
Katsuhiro Isozaki; Takao Ochiai; Tomoya Taguchi; Koh-ichi Nittoh; Kazushi Miki
Appl. Phys. Lett. 97, 221101 (2010) https://doi.org/10.1063/1.3518469
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Direct laser writing of three-dimensional submicron structures using a continuous-wave laser at 532 nm
M. Thiel; J. Fischer; G. von Freymann; M. Wegener
Appl. Phys. Lett. 97, 221102 (2010) https://doi.org/10.1063/1.3521464
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Quantitative NO2 molecular tagging velocimetry at 500 kHz frame rate
Naibo Jiang; Munetake Nishihara; Walter R. Lempert
Appl. Phys. Lett. 97, 221103 (2010) https://doi.org/10.1063/1.3522654
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Surface plasmon enhanced UV emission in AlGaN/GaN quantum well
J. Lin; A. Mohammadizia; A. Neogi; H. Morkoc; M. Ohtsu
Appl. Phys. Lett. 97, 221104 (2010) https://doi.org/10.1063/1.3515419
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Surface localized exciton emission from undoped SnO2 nanocrystal films
S. S. Pan; Y. H. Tian; Y. Y. Luo; Y. X. Zhang; S. Wang; G. H. Li
Appl. Phys. Lett. 97, 221105 (2010) https://doi.org/10.1063/1.3524196
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Midwave infrared quantum dot avalanche photodiode
David A. Ramirez; Jiayi Shao; Majeed M. Hayat; Sanjay Krishna
Appl. Phys. Lett. 97, 221106 (2010) https://doi.org/10.1063/1.3520519
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Lensfree sensing on a microfluidic chip using plasmonic nanoapertures
Bahar Khademhosseinieh; Gabriel Biener; Ikbal Sencan; Ting-Wei Su; Ahmet F. Coskun; Aydogan Ozcan
Appl. Phys. Lett. 97, 221107 (2010) https://doi.org/10.1063/1.3521390
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Electrical control of fine-structure splitting in self-assembled quantum dots for entangled photon pair creation
J. D. Mar; X. L. Xu; J. S. Sandhu; A. C. Irvine; M. Hopkinson; D. A. Williams
Appl. Phys. Lett. 97, 221108 (2010) https://doi.org/10.1063/1.3522655
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Midinfrared electroluminescence from InAs/InP quantum dashes
V. Liverini; A. Bismuto; L. Nevou; M. Beck; J. Faist
Appl. Phys. Lett. 97, 221109 (2010) https://doi.org/10.1063/1.3524213
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Cantilever biosensor reader using a common-path, holographic optical interferometer
Henrik C. Pedersen; Michael L. Jakobsen; Steen G. Hanson; Carsten Dam-Hansen; Tom Olesen; Poul Hansen
Appl. Phys. Lett. 97, 221110 (2010) https://doi.org/10.1063/1.3522888
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Dielectric gratings for wide-angle, broadband absorption by thin film photovoltaic cells
R. Esteban; M. Laroche; J. J. Greffet
Appl. Phys. Lett. 97, 221111 (2010) https://doi.org/10.1063/1.3512898
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InSb1−xNx/InSb/GaAs alloys by thermal annealing for midinfrared photodetection
K. P. Lim; H. T. Pham; S. F. Yoon; K. H. Tan; C. Y. Ngo
Appl. Phys. Lett. 97, 221112 (2010) https://doi.org/10.1063/1.3524228
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Strongly enhanced tunable photoluminescence in polymorphous silicon carbon thin films via excitation-transfer mechanism
Junzhuan Wang; V. Suendo; A. Abramov; Linwei Yu; Pere Roca i Cabarrocas
Appl. Phys. Lett. 97, 221113 (2010) https://doi.org/10.1063/1.3521280
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Scattering processes in terahertz InGaAs/InAlAs quantum cascade lasers
M. Fischer; G. Scalari; K. Celebi; M. Amanti; Ch. Walther; M. Beck; J. Faist
Appl. Phys. Lett. 97, 221114 (2010) https://doi.org/10.1063/1.3504251
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PLASMAS AND ELECTRICAL DISCHARGES

Ion acceleration and cooling in gasless self-sputtering
David Horwat; André Anders
Appl. Phys. Lett. 97, 221501 (2010) https://doi.org/10.1063/1.3521264
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Sharp rise of excitation temperature in the periphery of lamp arcs measured from the 254 nm resonance line of mercury
E. Drakakis; D. Karabourniotis
Appl. Phys. Lett. 97, 221502 (2010) https://doi.org/10.1063/1.3524212
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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Permeation measurements and modeling of highly defective Al2O3 thin films grown by atomic layer deposition on polymers
P. F. Carcia; R. S. McLean; M. H. Reilly
Appl. Phys. Lett. 97, 221901 (2010) https://doi.org/10.1063/1.3519476
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Indirect excitation of Er3+ ions in silicon nitride films prepared by reactive evaporation
E. Steveler; H. Rinnert; X. Devaux; M. Dossot; M. Vergnat
Appl. Phys. Lett. 97, 221902 (2010) https://doi.org/10.1063/1.3521279
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Interfacial slippage of inorganic electronic materials on plastic substrates
Longchao Dai; Xue Feng; Bin Liu; Daining Fang
Appl. Phys. Lett. 97, 221903 (2010) https://doi.org/10.1063/1.3517488
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Measurement of the thermal conductance of the graphene/SiO2 interface
Kin Fai Mak; Chun Hung Lui; Tony F. Heinz
Appl. Phys. Lett. 97, 221904 (2010) https://doi.org/10.1063/1.3511537
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Terahertz conductivity of the metal-insulator transition in a nanogranular VO2 film
T. L. Cocker; L. V. Titova; S. Fourmaux; H. -C. Bandulet; D. Brassard; J. -C. Kieffer; M. A. El Khakani; F. A. Hegmann
Appl. Phys. Lett. 97, 221905 (2010) https://doi.org/10.1063/1.3518482
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Probing the electron density in undoped, Si-doped, and Mg-doped InN nanowires by means of Raman scattering
R. Cuscó; N. Domènech-Amador; L. Artús; T. Gotschke; K. Jeganathan; T. Stoica; R. Calarco
Appl. Phys. Lett. 97, 221906 (2010) https://doi.org/10.1063/1.3520643
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Invar effects of (Fe71.2B24Y4.8)96Nb4 alloy in different structural states
Qiang Hu; Xie-Rong Zeng; Ming-Wang Fu
Appl. Phys. Lett. 97, 221907 (2010) https://doi.org/10.1063/1.3524199
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First principles study of Ag, Au, and Cu surface segregation in FePt-L1
Roman V. Chepulskii; Stefano Curtarolo
Appl. Phys. Lett. 97, 221908 (2010) https://doi.org/10.1063/1.3522652
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Observation of excited states of graphene on Ni(111) by secondary electron spectroscopy
P. Riccardi; A. Cupolillo; M. Pisarra; A. Sindona; L. S. Caputi
Appl. Phys. Lett. 97, 221909 (2010) https://doi.org/10.1063/1.3522891
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Stokes–Einstein relation in dense metallic glass-forming melts
S. M. Chathoth; K. Samwer
Appl. Phys. Lett. 97, 221910 (2010) https://doi.org/10.1063/1.3523361
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High-pressure hydrogen materials compatibility of piezoelectric films
K. J. Alvine; V. Shutthanandan; W. D. Bennett; C. C. Bonham; D. Skorski; S. G. Pitman; M. E. Dahl; C. H. Henager, Jr.
Appl. Phys. Lett. 97, 221911 (2010) https://doi.org/10.1063/1.3517445
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Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon
J. Mathews; R. T. Beeler; J. Tolle; C. Xu; R. Roucka; J. Kouvetakis; J. Menéndez
Appl. Phys. Lett. 97, 221912 (2010) https://doi.org/10.1063/1.3521391
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Ga induced superstructures as templates for lattice matched hetroepitaxial growth of GaN on Si(111) substrate
Praveen Kumar; Jithesh Kuyyalil; S. M. Shivaprasad
Appl. Phys. Lett. 97, 221913 (2010) https://doi.org/10.1063/1.3522830
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Conformal GaP layers on Si wire arrays for solar energy applications
Adele C. Tamboli; Manav Malhotra; Gregory M. Kimball; Daniel B. Turner-Evans; Harry A. Atwater
Appl. Phys. Lett. 97, 221914 (2010) https://doi.org/10.1063/1.3522895
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Single-mode waveguiding in bundles of self-assembled semiconductor nanowires
J. Zhang; A. A. Lutich; A. S. Susha; A. L. Rogach; F. Jäckel; J. Feldmann
Appl. Phys. Lett. 97, 221915 (2010) https://doi.org/10.1063/1.3524219
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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Investigation on the formation mechanism of p-type Li–N dual-doped ZnO
B. Y. Zhang; B. Yao; Y. F. Li; Z. Z. Zhang; B. H. Li; C. X. Shan; D. X. Zhao; D. Z. Shen
Appl. Phys. Lett. 97, 222101 (2010) https://doi.org/10.1063/1.3518059
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Effect of top metal contact on electrical transport through individual multiwalled carbon nanotubes
Neha Kulshrestha; Abhishek Misra; Senthil Srinivasan; Kiran Shankar Hazra; Reeti Bajpai; Soumyendu Roy; Gayatri Vaidya; D. S. Misra
Appl. Phys. Lett. 97, 222102 (2010) https://doi.org/10.1063/1.3518063
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Trapping effect evaluation of gateless AlGaN/GaN heterojunction field-effect transistors using transmission-line-model method
Cheng-Yu Hu (胡成余); Tamotsu Hashizume (橋詰保); Kota Ohi (大井幸多); Masafumi Tajima (田島正文)
Appl. Phys. Lett. 97, 222103 (2010) https://doi.org/10.1063/1.3506583
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Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures
Masataka Higashiwaki; Srabanti Chowdhury; Brian L. Swenson; Umesh K. Mishra
Appl. Phys. Lett. 97, 222104 (2010) https://doi.org/10.1063/1.3522649
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Schottky and tunneling behavior of Fe/MgO/Ge(100) structures
J.-B. Laloë; M. C. Hickey; J. Chang; J. S. Moodera
Appl. Phys. Lett. 97, 222105 (2010) https://doi.org/10.1063/1.3518071
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Trapping of electrons in metal oxide-polymer memory diodes in the initial stage of electroforming
Benjamin F. Bory; Stefan C. J. Meskers; René A. J. Janssen; Henrique L. Gomes; Dago M. de Leeuw
Appl. Phys. Lett. 97, 222106 (2010) https://doi.org/10.1063/1.3520517
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Dual dielectric tunnel barrier in silicon-rich silicon nitride charge-trap nonvolatile memory
Eunkyeom Kim; Taekyung Yim; Seungman An; Won-Ju Cho; Kyoungwan Park
Appl. Phys. Lett. 97, 222107 (2010) https://doi.org/10.1063/1.3521260
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Mechanism of ultrahigh Mn concentration in epitaxially grown wurtzite Ga1−xMnxN
Z. T. Chen; L. Wang; X. L. Yang; C. D. Wang; G. Y. Zhang
Appl. Phys. Lett. 97, 222108 (2010) https://doi.org/10.1063/1.3521278
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Fabrication of p-channel thin-film transistors using CuO active layers deposited at low temperature
Sang-Yun Sung; Se-Yun Kim; Kwang-Min Jo; Joon-Hyung Lee; Jeong-Joo Kim; Sang-Gon Kim; Kyoung-Hoon Chai; S. J. Pearton; D. P. Norton; Young-Woo Heo
Appl. Phys. Lett. 97, 222109 (2010) https://doi.org/10.1063/1.3521310
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High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers
Guowang Li; Yu Cao; Huili Grace Xing; Debdeep Jena
Appl. Phys. Lett. 97, 222110 (2010) https://doi.org/10.1063/1.3523358
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18.7% efficient laser-doped solar cell on p-type Czochralski silicon
Z. Hameiri; L. Mai; A. Sproul; S. R. Wenham
Appl. Phys. Lett. 97, 222111 (2010) https://doi.org/10.1063/1.3515866
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Room temperature single-electron memory and light sensor with three-dimensionally positioned InAs quantum dots
S. Göpfert; L. Worschech; S. Lingemann; C. Schneider; D. Press; S. Höfling; A. Forchel
Appl. Phys. Lett. 97, 222112 (2010) https://doi.org/10.1063/1.3520522
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p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents
Christophe A. Hurni; Oliver Bierwagen; Jordan R. Lang; Brian M. McSkimming; Chad S. Gallinat; Erin C. Young; David A. Browne; Umesh K. Mishra; James S. Speck
Appl. Phys. Lett. 97, 222113 (2010) https://doi.org/10.1063/1.3521388
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Anomalous Hall mobility kink observed in Mg-doped InN: Demonstration of p-type conduction
N. Ma; X. Q. Wang; F. J. Xu; N. Tang; B. Shen; Y. Ishitani; A. Yoshikawa
Appl. Phys. Lett. 97, 222114 (2010) https://doi.org/10.1063/1.3522892
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Enhancing the electron mobility via delta-doping in SrTiO3
Y. Kozuka; M. Kim; H. Ohta; Y. Hikita; C. Bell; H. Y. Hwang
Appl. Phys. Lett. 97, 222115 (2010) https://doi.org/10.1063/1.3524198
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Polarization-mediated remote surface roughness scattering in ultrathin barrier GaN high-electron mobility transistors
Yu Cao; Huili Xing; Debdeep Jena
Appl. Phys. Lett. 97, 222116 (2010) https://doi.org/10.1063/1.3521258
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Ultrafast resistive switching in SrTiO3:Nb single crystal
X. T. Zhang; Q. X. Yu; Y. P. Yao; X. G. Li
Appl. Phys. Lett. 97, 222117 (2010) https://doi.org/10.1063/1.3524216
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MAGNETISM AND SUPERCONDUCTIVITY

Current induced effective magnetic field and magnetization reversal in uniaxial anisotropy (Ga,Mn)As
M. Endo; F. Matsukura; H. Ohno
Appl. Phys. Lett. 97, 222501 (2010) https://doi.org/10.1063/1.3520514
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Observation of coupled vortex gyrations by 70-ps-time- and 20-nm-space-resolved full-field magnetic transmission soft x-ray microscopy
Hyunsung Jung; Young-Sang Yu; Ki-Suk Lee; Mi-Young Im; Peter Fischer; Lars Bocklage; Andreas Vogel; Markus Bolte; Guido Meier; Sang-Koog Kim
Appl. Phys. Lett. 97, 222502 (2010) https://doi.org/10.1063/1.3517496
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Control of vortex chirality in regular polygonal nanomagnets using in-plane magnetic field
S. Yakata; M. Miyata; S. Nonoguchi; H. Wada; T. Kimura
Appl. Phys. Lett. 97, 222503 (2010) https://doi.org/10.1063/1.3521407
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Large enhancement of the anomalous Hall effect in Co/Pt multilayers sandwiched by MgO layers
S. L. Zhang; J. Teng; J. Y. Zhang; Y. Liu; J. W. Li; G. H. Yu; S. G. Wang
Appl. Phys. Lett. 97, 222504 (2010) https://doi.org/10.1063/1.3522653
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Measurement of the attempt frequency in antiferromagnets
G. Vallejo-Fernandez; N. P. Aley; J. N. Chapman; K. O’Grady
Appl. Phys. Lett. 97, 222505 (2010) https://doi.org/10.1063/1.3522887
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Three-dimensional nanoscale superconducting quantum interference device pickup loops
E. J. Romans; E. J. Osley; L. Young; P. A. Warburton; W. Li
Appl. Phys. Lett. 97, 222506 (2010) https://doi.org/10.1063/1.3521262
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Metamagnetic transitions and magnetocaloric effect in epitaxial Ni–Co–Mn–In films
R. Niemann; O. Heczko; L. Schultz; S. Fähler
Appl. Phys. Lett. 97, 222507 (2010) https://doi.org/10.1063/1.3517443
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A superconducting 180° hybrid ring coupler for circuit quantum electrodynamics
E. Hoffmann; F. Deppe; T. Niemczyk; T. Wirth; E. P. Menzel; G. Wild; H. Huebl; M. Mariantoni; T. Weißl; A. Lukashenko; A. P. Zhuravel; A. V. Ustinov; A. Marx; R. Gross
Appl. Phys. Lett. 97, 222508 (2010) https://doi.org/10.1063/1.3522650
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DIELECTRICS AND FERROELECTRICITY

Thickness-dependent structural and magnetic properties of BiFeO3 films prepared by metal organic decomposition method
Fengzhen Huang; Xiaomei Lu; Weiwei Lin; Yi Kan; Junting Zhang; Qingdong Chen; Zhe Wang; Liben Li; Jinsong Zhu
Appl. Phys. Lett. 97, 222901 (2010) https://doi.org/10.1063/1.3519986
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Ultrathin GeOxNy interlayer formed by in situ NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices
Qi Xie; Jan Musschoot; Marc Schaekers; Matty Caymax; Annelies Delabie; Xin-Ping Qu; Yu-Long Jiang; Sven Van den Berghe; Junhu Liu; Christophe Detavernier
Appl. Phys. Lett. 97, 222902 (2010) https://doi.org/10.1063/1.3524208
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Extrinsic screening of ferroelectric domains in Pb(Zr0.48Ti0.52)O3
I. Krug; N. Barrett; A. Petraru; A. Locatelli; T. O. Mentes; M. A. Niño; K. Rahmanizadeh; G. Bihlmayer; C. M. Schneider
Appl. Phys. Lett. 97, 222903 (2010) https://doi.org/10.1063/1.3523359
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Dielectric, magnetic, and magnetoelectric properties of La and Ti codoped BiFeO3
Y. F. Cui; Y. G. Zhao; L. B. Luo; J. J. Yang; H. Chang; M. H. Zhu; D. Xie; T. L. Ren
Appl. Phys. Lett. 97, 222904 (2010) https://doi.org/10.1063/1.3524225
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Crystalline properties dependence of dielectric and energy storage properties of poly(vinylidene fluoride-chlorotrifluoroethylene)
Weimin Xia (夏卫民); Zhuo Xu (徐卓); Fei Wen (汶飞); Wenjing Li (李文静); Zhicheng Zhang (张志成)
Appl. Phys. Lett. 97, 222905 (2010) https://doi.org/10.1063/1.3518921
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NANOSCALE SCIENCE AND DESIGN

Demonstration of laser action in a pseudorandom medium
Jin-Kyu Yang; Svetlana V. Boriskina; Heeso Noh; Michael J. Rooks; Glenn S. Solomon; Luca Dal Negro; Hui Cao
Appl. Phys. Lett. 97, 223101 (2010) https://doi.org/10.1063/1.3519844
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Electromechanical robustness of monolayer graphene with extreme bending
Benjamin D. Briggs; Bhaskar Nagabhirava; Gayathri Rao; Robert Geer; Haiyuan Gao; Yang Xu; Bin Yu
Appl. Phys. Lett. 97, 223102 (2010) https://doi.org/10.1063/1.3519982
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Compensation mechanism in silicon-doped gallium arsenide nanowires
B. Ketterer; E. Mikheev; E. Uccelli; A. Fontcuberta i Morral
Appl. Phys. Lett. 97, 223103 (2010) https://doi.org/10.1063/1.3517254
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Probing the existence of energetically degenerate cluster isomers by chemical tagging
Qian Wang; Qiang Sun; Puru Jena
Appl. Phys. Lett. 97, 223104 (2010) https://doi.org/10.1063/1.3521282
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Reconstructing solid state nanopore shape from electrical measurements
Yael Liebes; Maria Drozdov; Yotam Y. Avital; Yaron Kauffmann; Hanna Rapaport; Wayne D. Kaplan; Nurit Ashkenasy
Appl. Phys. Lett. 97, 223105 (2010) https://doi.org/10.1063/1.3521411
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Titania nanostructure arrays from lithographically defined templates
Deying Xia; Ying-Bing Jiang; Xiang He; S. R. J. Brueck
Appl. Phys. Lett. 97, 223106 (2010) https://doi.org/10.1063/1.3521462
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Flexible piezoresistive strain sensor based on single Sb-doped ZnO nanobelts
Ya Yang; Wen Guo; Junjie Qi; Yue Zhang
Appl. Phys. Lett. 97, 223107 (2010) https://doi.org/10.1063/1.3522885
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Strain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes: Effect of deposition thickness and composition
W. Lei; H. H. Tan; C. Jagadish; Q. J. Ren; J. Lu; Z. H. Chen
Appl. Phys. Lett. 97, 223108 (2010) https://doi.org/10.1063/1.3522889
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Epitaxial growth of a silicene sheet
Boubekeur Lalmi; Hamid Oughaddou; Hanna Enriquez; Abdelkader Kara; Sébastien Vizzini; Bénidicte Ealet; Bernard Aufray
Appl. Phys. Lett. 97, 223109 (2010) https://doi.org/10.1063/1.3524215
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Self-assembled In0.5Ga0.5As quantum dots on GaP
Yuncheng Song; Paul J. Simmonds; Minjoo Larry Lee
Appl. Phys. Lett. 97, 223110 (2010) https://doi.org/10.1063/1.3522647
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Enhanced photocatalytic activity of TiO2 nanobarbed fibers treated with atmospheric pressure plasma using O2 gas
Hyun-Uk Lee; Kyun Ahn; Se-Young Jeong; Chae-Ryong Cho; Jong-Pil Kim; Jong-Seong Bae; Hyun-Gyu Kim; Se-Hun Kwon; Hyung Woo Lee
Appl. Phys. Lett. 97, 223111 (2010) https://doi.org/10.1063/1.3524210
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Chiral self-assemblies of amino-acid molecules: D- and L-methionine on Au(111) surface
A. Naitabdi; V. Humblot
Appl. Phys. Lett. 97, 223112 (2010) https://doi.org/10.1063/1.3524229
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Self-powered ultraviolet photodetector based on a single Sb-doped ZnO nanobelt
Ya Yang; Wen Guo; Junjie Qi; Jing Zhao; Yue Zhang
Appl. Phys. Lett. 97, 223113 (2010) https://doi.org/10.1063/1.3524231
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Indium oxide octahedra optical microcavities
Hongxing Dong; Liaoxin Sun; Shulin Sun; Wei Xie; Lei Zhou; Xuechu Shen; Zhanghai Chen
Appl. Phys. Lett. 97, 223114 (2010) https://doi.org/10.1063/1.3521266
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ORGANIC ELECTRONICS AND PHOTONICS

Liquid crystal-ZnO nanoparticle photovoltaics: Role of nanoparticles in ordering the liquid crystal
L. J. Martínez-Miranda; Kaitlin M. Traister; Iriselies Meléndez-Rodríguez; Lourdes Salamanca-Riba
Appl. Phys. Lett. 97, 223301 (2010) https://doi.org/10.1063/1.3511736
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Efficiency dependence on alkali metal compound/Al bilayer cathode in organic light-emitting diodes
D. Y. Zhou; S. D. Cai; W. Gu; L. S. Liao; S. T. Lee
Appl. Phys. Lett. 97, 223302 (2010) https://doi.org/10.1063/1.3522883
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Light out-coupling enhancement of organic light-emitting devices with microlens array
J. P. Yang; Q. Y. Bao; Z. Q. Xu; Y. Q. Li; J. X. Tang; S. Shen
Appl. Phys. Lett. 97, 223303 (2010) https://doi.org/10.1063/1.3521413
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Spin-polarized charge carrier injection by tunneling from ferromagnetic contacts into organic semiconductors
M. Yunus; P. P. Ruden; D. L. Smith
Appl. Phys. Lett. 97, 223304 (2010) https://doi.org/10.1063/1.3522657
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Enhanced performance of inverted polymer solar cells with cathode interfacial tuning via water-soluble polyfluorenes
Seok-In Na; Tae-Soo Kim; Seung-Hwan Oh; Junkyung Kim; Seok-Soon Kim; Dong-Yu Kim
Appl. Phys. Lett. 97, 223305 (2010) https://doi.org/10.1063/1.3522893
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Thermal nonlinear effects in hybrid optical microresonators
Hong Seok Choi; Andrea M. Armani
Appl. Phys. Lett. 97, 223306 (2010) https://doi.org/10.1063/1.3520467
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Polymer space-charge-limited transistor as a solid-state vacuum tube triode
Yu-Chiang Chao; Ming-Che Ku; Wu-Wei Tsai; Hsiao-Wen Zan; Hsin-Fei Meng; Hung-Kuo Tsai; Sheng-Fu Horng
Appl. Phys. Lett. 97, 223307 (2010) https://doi.org/10.1063/1.3513334
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DEVICE PHYSICS

Extreme dielectric strength in boron doped homoepitaxial diamond
Pierre-Nicolas Volpe; Pierre Muret; Julien Pernot; Franck Omnès; Tokuyuki Teraji; Yasuo Koide; François Jomard; Dominique Planson; Pierre Brosselard; Nicolas Dheilly; Bertrand Vergne; Sigo Scharnholz
Appl. Phys. Lett. 97, 223501 (2010) https://doi.org/10.1063/1.3520140
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Field-induced strain degradation of AlGaN/GaN high electron mobility transistors on a nanometer scale
Chung-Han Lin; D. R. Doutt; U. K. Mishra; T. A. Merz; L. J. Brillson
Appl. Phys. Lett. 97, 223502 (2010) https://doi.org/10.1063/1.3521392
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Strain response of La0.7Sr0.3CoO3 epitaxial thin films probed by SrTiO3 crystalline microcantilevers
M. Biasotti; L. Pellegrino; E. Bellingeri; N. Manca; A. S. Siri; D. Marrè
Appl. Phys. Lett. 97, 223503 (2010) https://doi.org/10.1063/1.3519478
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Nonpropagating X-shaped acoustic waves in sonic crystals without defects
Wei-Wei Kan; Bin Liang; Xue-Feng Zhu; Juan Tu; Xin-Ye Zou; Jian-Chun Cheng
Appl. Phys. Lett. 97, 223504 (2010) https://doi.org/10.1063/1.3522896
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Development and characterization of high temperature stable Ta–W–Si–C amorphous metal gates
Melody E. Grubbs; Xiao Zhang; Michael Deal; Yoshio Nishi; Bruce M. Clemens
Appl. Phys. Lett. 97, 223505 (2010) https://doi.org/10.1063/1.3508952
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Charge detection in phosphorus-doped silicon double quantum dots
A. Rossi; T. Ferrus; G. J. Podd; D. A. Williams
Appl. Phys. Lett. 97, 223506 (2010) https://doi.org/10.1063/1.3524490
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Carbon-doped single-crystalline SiGe/Si thermistor with high temperature coefficient of resistance and low noise level
H. H. Radamson; M. Kolahdouz; S. Shayestehaminzadeh; A. Afshar Farniya; S. Wissmar
Appl. Phys. Lett. 97, 223507 (2010) https://doi.org/10.1063/1.3524211
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BIOPHYSICS AND BIO-INSPIRED SYSTEMS

High frequency asynchronous magnetic bead rotation for improved biosensors
Paivo Kinnunen; Irene Sinn; Brandon H. McNaughton; Raoul Kopelman
Appl. Phys. Lett. 97, 223701 (2010) https://doi.org/10.1063/1.3505492
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In vivo and simultaneous multimodal imaging: Integrated multiplex coherent anti-Stokes Raman scattering and two-photon microscopy
Dong Li; Wei Zheng; Yan Zeng; Jianan Y. Qu
Appl. Phys. Lett. 97, 223702 (2010) https://doi.org/10.1063/1.3521415
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Study of single particle charge and Brownian motions with surface plasmon resonance
Xiaonan Shan; Shaopeng Wang; Nongjian Tao
Appl. Phys. Lett. 97, 223703 (2010) https://doi.org/10.1063/1.3519364
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Resonant waveguide grating imager for live cell sensing
Ann M. Ferrie; Qi Wu; Ye Fang
Appl. Phys. Lett. 97, 223704 (2010) https://doi.org/10.1063/1.3522894
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Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer
Mritunjay Kumar, Vishal Khandelwal, et al.
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