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LASERS, OPTICS, AND OPTOELECTRONICS

Exciton and electron-hole plasma lasing in ZnO dodecagonal whispering-gallery-mode microcavities at room temperature

J. Dai; C. X. Xu; P. Wu; J. Y. Guo; Z. H. Li; Z. L. Shi

Appl. Phys. Lett. 97, 011101 (2010) https://doi.org/10.1063/1.3460281

Abstract

View articletitled, Exciton and electron-hole plasma lasing in ZnO dodecagonal whispering-gallery-mode microcavities at room temperature

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Optically induced fast wavelength modulation in a quantum cascade laser

Gang Chen; Rainer Martini; Seong-wook Park; Clyde G. Bethea; I.-Chun A. Chen; P. D. Grant; R. Dudek; H. C. Liu

Appl. Phys. Lett. 97, 011102 (2010) https://doi.org/10.1063/1.3457871

Abstract

View articletitled, Optically induced fast wavelength modulation in a quantum cascade laser

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InGaN/GaN self-organized quantum dot green light emitting diodes with reduced efficiency droop

Meng Zhang; Pallab Bhattacharya; Wei Guo

Appl. Phys. Lett. 97, 011103 (2010) https://doi.org/10.1063/1.3460921

Abstract

View articletitled, InGaN/GaN self-organized quantum dot green light emitting diodes with reduced efficiency droop

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Long exciton spin relaxation in coupled quantum wells

K. Kowalik-Seidl; X. P. Vögele; B. N. Rimpfl; S. Manus; J. P. Kotthaus; D. Schuh; W. Wegscheider; A. W. Holleitner

Appl. Phys. Lett. 97, 011104 (2010) https://doi.org/10.1063/1.3458703

Abstract

View articletitled, Long exciton spin relaxation in coupled quantum wells

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Characterization of sensing capability of optofluidic ring resonator biosensors

Hao Li; Xudong Fan

Appl. Phys. Lett. 97, 011105 (2010) https://doi.org/10.1063/1.3462296

Abstract

View articletitled, Characterization of sensing capability of optofluidic ring resonator biosensors

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Polarization based control of optical hysteresis in coupled GaAs microdisks

S. N. Ghosh; B. B. Buckley; C. G. L. Ferri; X. Li; F. M. Mendoza; Y. K. Verma; N. Samarth; D. D. Awschalom; S. Ghosh

Appl. Phys. Lett. 97, 011106 (2010) https://doi.org/10.1063/1.3462309

Abstract

View articletitled, Polarization based control of optical hysteresis in coupled GaAs microdisks

Supplementary Material

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Laser initiated thermal tuning of a cholesteric liquid crystal

Lalgudi V. Natarajan; Timothy J. White; Jeremy M. Wofford; Vincent P. Tondiglia; Richard L. Sutherland; Stephen A. Siwecki; Timothy J. Bunning

Appl. Phys. Lett. 97, 011107 (2010) https://doi.org/10.1063/1.3459957

Abstract

View articletitled, Laser initiated thermal tuning of a cholesteric liquid crystal

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Interacting waves on chains of split-ring resonators in the presence of retardation

V. Lomanets; O. Zhuromskyy; G. Onishchukov; O. Sydoruk; E. Tatartschuk; E. Shamonina; G. Leuchs; U. Peschel

Appl. Phys. Lett. 97, 011108 (2010) https://doi.org/10.1063/1.3462314

Abstract

View articletitled, Interacting waves on chains of split-ring resonators in the presence of retardation

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Experimental determination of the quadratic nonlinear magnetic susceptibility of a varactor-loaded split ring resonator metamaterial

Stéphane Larouche; Alec Rose; Ekaterina Poutrina; Da Huang; David R. Smith

Appl. Phys. Lett. 97, 011109 (2010) https://doi.org/10.1063/1.3460919

Abstract

View articletitled, Experimental determination of the quadratic nonlinear magnetic susceptibility of a varactor-loaded split ring resonator metamaterial

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PLASMAS AND ELECTRICAL DISCHARGES

Removal of floating dust in glow discharge using plasma jet

C. M. Ticoş; I. Jepu; C. P. Lungu; P. Chiru; V. Zaroschi; A. M. Lungu

Appl. Phys. Lett. 97, 011501 (2010) https://doi.org/10.1063/1.3460293

Abstract

View articletitled, Removal of floating dust in glow discharge using plasma jet

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Evidence of atomic adsorption on ${TiO}_{2}$ under plasma exposure and related $C_{2} H_{2}$ surface reactivity

O. Guaitella; C. Lazzaroni; D. Marinov; A. Rousseau

Appl. Phys. Lett. 97, 011502 (2010) https://doi.org/10.1063/1.3462295

Abstract

View articletitled, Evidence of atomic adsorption on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>TiO</mtext></mrow><mn>2</mn></msub></mrow></math> under plasma exposure and related <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mtext>C</mtext><mn>2</mn></msub><msub><mtext>H</mtext><mn>2</mn></msub></mrow></math> surface reactivity

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Enhancement of a laminar premixed methane/oxygen/nitrogen flame speed using femtosecond-laser-induced plasma

Xin Yu; Jiangbo Peng; Peng Yang; Rui Sun; Yachao Yi; Yongpeng Zhao; Deying Chen; Junhua Yu

Appl. Phys. Lett. 97, 011503 (2010) https://doi.org/10.1063/1.3457384

Abstract

View articletitled, Enhancement of a laminar premixed methane/oxygen/nitrogen flame speed using femtosecond-laser-induced plasma

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Pressure dependence of plasma structure in microwave gas breakdown at 110 GHz

Alan Cook; Michael Shapiro; Richard Temkin

Appl. Phys. Lett. 97, 011504 (2010) https://doi.org/10.1063/1.3462320

Abstract

View articletitled, Pressure dependence of plasma structure in microwave gas breakdown at 110 GHz

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Electric field controlled Faraday rotation in an electro-optic/magneto-optic bilayer

Yu. S. Dadoenkova; I. L. Lyubchanskii; Y. P. Lee; Th. Rasing

Appl. Phys. Lett. 97, 011901 (2010) https://doi.org/10.1063/1.3456534

Abstract

View articletitled, Electric field controlled Faraday rotation in an electro-optic/magneto-optic bilayer

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Active waveguide effects from porous anodic alumina: An optical sensor proposition

F. Trivinho-Strixino; H. A. Guerreiro; C. S. Gomes; E. C. Pereira; F. E. G. Guimarães

Appl. Phys. Lett. 97, 011902 (2010) https://doi.org/10.1063/1.3447375

Abstract

View articletitled, Active waveguide effects from porous anodic alumina: An optical sensor proposition

Supplementary Material

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Two-photon spectral hole burning spectroscopy of InAs/GaAs quantum dots

T. Moldaschl; W. Parz; T. Müller; S. Golka; G. Strasser; K. Unterrainer

Appl. Phys. Lett. 97, 011903 (2010) https://doi.org/10.1063/1.3460527

Abstract

View articletitled, Two-photon spectral hole burning spectroscopy of InAs/GaAs quantum dots

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A high refractive index metamaterial at visible frequencies formed by stacked cut-wire plasmonic structures

Xingzhan Wei; Haofei Shi; Xiaochun Dong; Yueguang Lu; Chunlei Du

Appl. Phys. Lett. 97, 011904 (2010) https://doi.org/10.1063/1.3453477

Abstract

View articletitled, A high refractive index metamaterial at visible frequencies formed by stacked cut-wire plasmonic structures

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Enhanced optical transmission through metal-dielectric multilayer gratings

Lin Zhou; Cheng-ping Huang; Shan Wu; Xiao-gang Yin; Yu-min Wang; Qian-jin Wang; Yong-yuan Zhu

Appl. Phys. Lett. 97, 011905 (2010) https://doi.org/10.1063/1.3458702

Abstract

View articletitled, Enhanced optical transmission through metal-dielectric multilayer gratings

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High force sensitivity in $Q$ -controlled phase-modulation atomic force microscopy

Naritaka Kobayashi; Yan Jun Li; Yoshitaka Naitoh; Masami Kageshima; Yasuhiro Sugawara

Appl. Phys. Lett. 97, 011906 (2010) https://doi.org/10.1063/1.3457431

Abstract

View articletitled, High force sensitivity in <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">Q</mi></math>-controlled phase-modulation atomic force microscopy

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Nonlinear optical conductance in a graphene pn junction in the terahertz regime

X. G. Xu; S. Sultan; C. Zhang; J. C. Cao

Appl. Phys. Lett. 97, 011907 (2010) https://doi.org/10.1063/1.3462972

Abstract

View articletitled, Nonlinear optical conductance in a graphene pn junction in the terahertz regime

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Interfacial thermal conductance in spun-cast polymer films and polymer brushes

Mark D. Losego; Lionel Moh; Kevin A. Arpin; David G. Cahill; Paul V. Braun

Appl. Phys. Lett. 97, 011908 (2010) https://doi.org/10.1063/1.3458802

Abstract

View articletitled, Interfacial thermal conductance in spun-cast polymer films and polymer brushes

Supplementary Material

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Ge quantum dot tunneling diode with room temperature negative differential resistance

M. Oehme; A. Karmous; M. Sarlija; J. Werner; E. Kasper; J. Schulze

Appl. Phys. Lett. 97, 012101 (2010) https://doi.org/10.1063/1.3462069

Abstract

View articletitled, Ge quantum dot tunneling diode with room temperature negative differential resistance

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Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates

Hayato Takita; Norihiko Hashimoto; Cong Thanh Nguyen; Masahiro Kudo; Masashi Akabori; Toshi-kazu Suzuki

Appl. Phys. Lett. 97, 012102 (2010) https://doi.org/10.1063/1.3459137

Abstract

View articletitled, Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates

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High temperature conductance characteristics of ${LaAlO}_{3} / {SrTiO}_{3}$ -heterostructures under equilibrium oxygen atmospheres

F. Gunkel; S. Hoffmann-Eifert; R. Dittmann; S. B. Mi; C. L. Jia; P. Meuffels; R. Waser

Appl. Phys. Lett. 97, 012103 (2010) https://doi.org/10.1063/1.3457386

Abstract

View articletitled, High temperature conductance characteristics of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>LaAlO</mtext></mrow><mn>3</mn></msub><mo>/</mo><msub><mrow><mtext>SrTiO</mtext></mrow><mn>3</mn></msub></mrow></math>-heterostructures under equilibrium oxygen atmospheres

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Band-gap narrowing of ${TiO}_{2}$ doped with Ce probed with x-ray absorption spectroscopy

S. W. Chen; J. M. Lee; K. T. Lu; C. W. Pao; J. F. Lee; T. S. Chan; J. M. Chen

Appl. Phys. Lett. 97, 012104 (2010) https://doi.org/10.1063/1.3460916

Abstract

View articletitled, Band-gap narrowing of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>TiO</mtext></mrow><mn>2</mn></msub></mrow></math> doped with Ce probed with x-ray absorption spectroscopy

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End-of-range defects in germanium and their role in boron deactivation

F. Panciera; P. F. Fazzini; M. Collet; J. Boucher; E. Bedel; F. Cristiano

Appl. Phys. Lett. 97, 012105 (2010) https://doi.org/10.1063/1.3456537

Abstract

View articletitled, End-of-range defects in germanium and their role in boron deactivation

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High performance atomic-layer-deposited ${LaLuO}_{3} / Ge$ -on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown ${GeO}_{2}$ as interfacial passivation layer

J. J. Gu; Y. Q. Liu; M. Xu; G. K. Celler; R. G. Gordon; P. D. Ye

Appl. Phys. Lett. 97, 012106 (2010) https://doi.org/10.1063/1.3462303

Abstract

View articletitled, High performance atomic-layer-deposited <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>LaLuO</mtext></mrow><mn>3</mn></msub><mo>/</mo><mtext>Ge</mtext></mrow></math>-on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>GeO</mtext></mrow><mn>2</mn></msub></mrow></math> as interfacial passivation layer

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Dramatic mobility enhancements in doped ${SrTiO}_{3}$ thin films by defect management

Y. Kozuka; Y. Hikita; C. Bell; H. Y. Hwang

Appl. Phys. Lett. 97, 012107 (2010) https://doi.org/10.1063/1.3457994

Abstract

View articletitled, Dramatic mobility enhancements in doped <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>SrTiO</mtext></mrow><mn>3</mn></msub></mrow></math> thin films by defect management

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Ion versus $p H$ sensitivity of ungated AlGaN/GaN heterostructure-based devices

Anna Podolska; Martin Kocan; Alex M. Garces Cabezas; Timothy D. Wilson; Gilberto A. Umana-Membreno; Brett D. Nener; Giacinta Parish; Stacia Keller; Umesh K. Mishra

Appl. Phys. Lett. 97, 012108 (2010) https://doi.org/10.1063/1.3462323

Abstract

View articletitled, Ion versus <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>p</mi><mtext>H</mtext></mrow></math> sensitivity of ungated AlGaN/GaN heterostructure-based devices

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MAGNETISM AND SUPERCONDUCTIVITY

Influence of tetragonal distortion on the magnetic and electronic properties of the Heusler compound ${Co}_{2} TiSn$ from first principles

Markus Meinert; Jan-Michael Schmalhorst; Günter Reiss

Appl. Phys. Lett. 97, 012501 (2010) https://doi.org/10.1063/1.3459145

Abstract

View articletitled, Influence of tetragonal distortion on the magnetic and electronic properties of the Heusler compound <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Co</mtext></mrow><mn>2</mn></msub><mtext>TiSn</mtext></mrow></math> from first principles

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Direct observation of giant Barkhausen jumps in magnetic microwires

A. Chizhik; A. Stupakiewicz; A. Maziewski; A. Zhukov; J. Gonzalez; J. M. Blanco

Appl. Phys. Lett. 97, 012502 (2010) https://doi.org/10.1063/1.3460292

Abstract

View articletitled, Direct observation of giant Barkhausen jumps in magnetic microwires

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Conductance asymmetry in point-contacts on epitaxial thin films of $Ba {({Fe}_{0.92} {Co}_{0.08})}_{2} {As}_{2}$

Manan Mehta; Goutam Sheet; D. A. Dikin; S. Lee; C. W. Bark; J. Jiang; J. D. Weiss; E. E. Hellstrom; M. S. Rzchowski; C. B. Eom; V. Chandrasekhar

Appl. Phys. Lett. 97, 012503 (2010) https://doi.org/10.1063/1.3460274

Abstract

View articletitled, Conductance asymmetry in point-contacts on epitaxial thin films of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mtext>Ba</mtext><msub><mrow><mrow><mo>(</mo><mrow><msub><mrow><mtext>Fe</mtext></mrow><mrow><mn>0.92</mn></mrow></msub><msub><mrow><mtext>Co</mtext></mrow><mrow><mn>0.08</mn></mrow></msub></mrow><mo>)</mo></mrow></mrow><mn>2</mn></msub><msub><mrow><mtext>As</mtext></mrow><mn>2</mn></msub></mrow></math>

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Spin-orbit coupling in double-sided doped InAs quantum well structures

Kyung-Ho Kim; Hyung-jun Kim; Hyun Cheol Koo; Joonyeon Chang; Suk-Hee Han

Appl. Phys. Lett. 97, 012504 (2010) https://doi.org/10.1063/1.3462325

Abstract

View articletitled, Spin-orbit coupling in double-sided doped InAs quantum well structures

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Magnetostatic control of vortex chirality in Co thin film rings

Chunghee Nam; M. D. Mascaro; C. A. Ross

Appl. Phys. Lett. 97, 012505 (2010) https://doi.org/10.1063/1.3459973

Abstract

View articletitled, Magnetostatic control of vortex chirality in Co thin film rings

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Enhancement of room temperature ferromagnetism in N-doped ${TiO}_{2 - x}$ rutile: Correlation with the local electronic properties

G. Drera; M. C. Mozzati; P. Galinetto; Y. Diaz-Fernandez; L. Malavasi; F. Bondino; M. Malvestuto; L. Sangaletti

Appl. Phys. Lett. 97, 012506 (2010) https://doi.org/10.1063/1.3458699

Abstract

View articletitled, Enhancement of room temperature ferromagnetism in N-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>TiO</mtext></mrow><mrow><mn>2</mn><mo>−</mo><mi>x</mi></mrow></msub></mrow></math> rutile: Correlation with the local electronic properties

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Enhanced spin accumulation obtained by inserting low-resistance MgO interface in metallic lateral spin valves

Y. Fukuma; L. Wang; H. Idzuchi; Y. Otani

Appl. Phys. Lett. 97, 012507 (2010) https://doi.org/10.1063/1.3460909

Abstract

View articletitled, Enhanced spin accumulation obtained by inserting low-resistance MgO interface in metallic lateral spin valves

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DIELECTRICS AND FERROELECTRICITY

Band structure and electrical properties of Gd-doped ${HfO}_{2}$ high $k$ gate dielectric

Yuhua Xiong; Hailing Tu; Jun Du; Mei Ji; Xinqiang Zhang; Lei Wang

Appl. Phys. Lett. 97, 012901 (2010) https://doi.org/10.1063/1.3460277

Abstract

View articletitled, Band structure and electrical properties of Gd-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>HfO</mtext></mrow><mn>2</mn></msub></mrow></math> high <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">k</mi></math> gate dielectric

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Memristive behaviors of ${LiNbO}_{3}$ ferroelectric diodes

Haitao Li; Yidong Xia; Bo Xu; Hongxuan Guo; Jiang Yin; Zhiguo Liu

Appl. Phys. Lett. 97, 012902 (2010) https://doi.org/10.1063/1.3462067

Abstract

View articletitled, Memristive behaviors of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>LiNbO</mtext></mrow><mn>3</mn></msub></mrow></math> ferroelectric diodes

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Defect structure and materials “hardening” in ${Fe}_{2} O_{3}$ -doped $[{Bi}_{0.5} {Na}_{0.5}] {TiO}_{3}$ ferroelectrics

Elena Aksel; Emre Erdem; Peter Jakes; Jacob L. Jones; Rüdiger-A. Eichel

Appl. Phys. Lett. 97, 012903 (2010) https://doi.org/10.1063/1.3455888

Abstract

View articletitled, Defect structure and materials “hardening” in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Fe</mtext></mrow><mn>2</mn></msub><msub><mtext>O</mtext><mn>3</mn></msub></mrow></math>-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mo>[</mo><mrow><msub><mrow><mtext>Bi</mtext></mrow><mrow><mn>0.5</mn></mrow></msub><msub><mrow><mtext>Na</mtext></mrow><mrow><mn>0.5</mn></mrow></msub></mrow><mo>]</mo></mrow><msub><mrow><mtext>TiO</mtext></mrow><mn>3</mn></msub></mrow></math> ferroelectrics

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Electrostatic topology of ferroelectric domains in ${YMnO}_{3}$

Tobias Jungk; Ákos Hoffmann; Manfred Fiebig; Elisabeth Soergel

Appl. Phys. Lett. 97, 012904 (2010) https://doi.org/10.1063/1.3460286

Abstract

View articletitled, Electrostatic topology of ferroelectric domains in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>YMnO</mtext></mrow><mn>3</mn></msub></mrow></math>

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Impact of applied strain on the electron transport through ferroelectric tunnel junctions

Xin Luo; S. P. Lin; Biao Wang; Yue Zheng

Appl. Phys. Lett. 97, 012905 (2010) https://doi.org/10.1063/1.3462070

Abstract

View articletitled, Impact of applied strain on the electron transport through ferroelectric tunnel junctions

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Metal-oxide-high- $k$ -oxide-silicon memory structure incorporating a ${Tb}_{2} O_{3}$ charge trapping layer

Tung-Ming Pan; Ji-Shing Jung; Fa-Hsyang Chen

Appl. Phys. Lett. 97, 012906 (2010) https://doi.org/10.1063/1.3462321

Abstract

View articletitled, Metal-oxide-high-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">k</mi></math>-oxide-silicon memory structure incorporating a <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Tb</mtext></mrow><mn>2</mn></msub><msub><mtext>O</mtext><mn>3</mn></msub></mrow></math> charge trapping layer

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NANOSCALE SCIENCE AND DESIGN

Color tunable light-emitting diodes based on $p^{+} -Si / p {-CuAlO}_{2} / n -ZnO$ nanorod array heterojunctions

Bo Ling; Jun Liang Zhao; Xiao Wei Sun; Swee Tiam Tan; Aung Ko Ko Kyaw; Yoga Divayana; Zhi Li Dong

Appl. Phys. Lett. 97, 013101 (2010) https://doi.org/10.1063/1.3459963

Abstract

View articletitled, Color tunable light-emitting diodes based on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msup><mi>p</mi><mo>+</mo></msup><mtext>-Si</mtext><mo>/</mo><mi>p</mi><msub><mrow><mtext>-CuAlO</mtext></mrow><mn mathvariant="bold">2</mn></msub><mo>/</mo><mi>n</mi><mtext>-ZnO</mtext></mrow></math> nanorod array heterojunctions

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Nanoscale rectification at the ${LaAlO}_{3} / {SrTiO}_{3}$ interface

Daniela F. Bogorin; Chung Wung Bark; Ho Won Jang; Cheng Cen; Chad M. Folkman; Chang-Beom Eom; Jeremy Levy

Appl. Phys. Lett. 97, 013102 (2010) https://doi.org/10.1063/1.3459138

Abstract

View articletitled, Nanoscale rectification at the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>LaAlO</mtext></mrow><mn>3</mn></msub><mo>/</mo><msub><mrow><mtext>SrTiO</mtext></mrow><mn>3</mn></msub></mrow></math> interface

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Graphene field-effect transistors with self-aligned gates

Damon B. Farmer; Yu-Ming Lin; Phaedon Avouris

Appl. Phys. Lett. 97, 013103 (2010) https://doi.org/10.1063/1.3459972

Abstract

View articletitled, Graphene field-effect transistors with self-aligned gates

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Infrared photovoltaic solar cells based on $C_{60}$ fullerene encapsulated single-walled carbon nanotubes

R. Hatakeyama; Y. F. Li; T. Y. Kato; T. Kaneko

Appl. Phys. Lett. 97, 013104 (2010) https://doi.org/10.1063/1.3462313

Abstract

View articletitled, Infrared photovoltaic solar cells based on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mtext>C</mtext><mrow><mn>60</mn></mrow></msub></mrow></math> fullerene encapsulated single-walled carbon nanotubes

Supplementary Material

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Local electronic and magnetic studies of an artificial ${La}_{2} {FeCrO}_{6}$ double perovskite

Benjamin Gray; Ho Nyung Lee; Jian Liu; J. Chakhalian; J. W. Freeland

Appl. Phys. Lett. 97, 013105 (2010) https://doi.org/10.1063/1.3455323

Abstract

View articletitled, Local electronic and magnetic studies of an artificial <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>La</mtext></mrow><mn>2</mn></msub><msub><mrow><mtext>FeCrO</mtext></mrow><mn>6</mn></msub></mrow></math> double perovskite

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Graphene spin capacitor for magnetic field sensing

Y. G. Semenov; J. M. Zavada; K. W. Kim

Appl. Phys. Lett. 97, 013106 (2010) https://doi.org/10.1063/1.3462297

Abstract

View articletitled, Graphene spin capacitor for magnetic field sensing

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Hybrid conjugated polymer solar cells using patterned GaAs nanopillars

Giacomo Mariani; Ramesh B. Laghumavarapu; Bertrand Tremolet de Villers; Joshua Shapiro; Pradeep Senanayake; Andrew Lin; Benjamin J. Schwartz; Diana L. Huffaker

Appl. Phys. Lett. 97, 013107 (2010) https://doi.org/10.1063/1.3459961

Abstract

View articletitled, Hybrid conjugated polymer solar cells using patterned GaAs nanopillars

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Highly-directional emission patterns based on near single guided mode extraction from GaN-based ultrathin microcavity light-emitting diodes with photonic crystals

Chun-Feng Lai; Hao-Chung Kuo; Peichen Yu; Tien-Chang Lu; Chia-Hsin Chao; Hsi-Hsuan Yen; Wen-Yung Yeh

Appl. Phys. Lett. 97, 013108 (2010) https://doi.org/10.1063/1.3459970

Abstract

View articletitled, Highly-directional emission patterns based on near single guided mode extraction from GaN-based ultrathin microcavity light-emitting diodes with photonic crystals

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ORGANIC ELECTRONICS AND PHOTONICS

High-power and high-speed organic three-dimensional transistors with submicrometer channels

M. Uno; Y. Hirose; T. Uemura; K. Takimiya; Y. Nakazawa; J. Takeya

Appl. Phys. Lett. 97, 013301 (2010) https://doi.org/10.1063/1.3458867

Abstract

View articletitled, High-power and high-speed organic three-dimensional transistors with submicrometer channels

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Electro-optic measurement of carrier mobility in an organic thin-film transistor

E. G. Bittle; J. W. Brill; J. E. Anthony

Appl. Phys. Lett. 97, 013302 (2010) https://doi.org/10.1063/1.3460526

Abstract

View articletitled, Electro-optic measurement of carrier mobility in an organic thin-film transistor

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Single carrier devices with electrical doped layers for the characterization of charge-carrier transport in organic thin-films

Matthias Schober; Selina Olthof; Mauro Furno; Björn Lüssem; Karl Leo

Appl. Phys. Lett. 97, 013303 (2010) https://doi.org/10.1063/1.3460528

Abstract

View articletitled, Single carrier devices with electrical doped layers for the characterization of charge-carrier transport in organic thin-films

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Carrier transport mechanisms of organic bistable devices fabricated utilizing colloidal ZnO quantum dot-polymethylmethacrylate polymer nanocomposites

Dong Ick Son; Chan Ho You; Jae Hun Jung; Tae Whan Kim

Appl. Phys. Lett. 97, 013304 (2010) https://doi.org/10.1063/1.3454774

Abstract

View articletitled, Carrier transport mechanisms of organic bistable devices fabricated utilizing colloidal ZnO quantum dot-polymethylmethacrylate polymer nanocomposites

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Relation between the barrier interface and the built-in potential in pentacene/ $C_{60}$ solar cell

J. C. Nolasco; Antonio Sánchez-Díaz; R. Cabré; J. Ferré-Borrull; L. F. Marsal; E. Palomares; J. Pallarès

Appl. Phys. Lett. 97, 013305 (2010) https://doi.org/10.1063/1.3456393

Abstract

View articletitled, Relation between the barrier interface and the built-in potential in pentacene/<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mtext>C</mtext><mrow><mn>60</mn></mrow></msub></mrow></math> solar cell

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Negative differential resistance in hydrated deoxyribonucleic acid thin films mediated by diffusion-limited water redox reactions

H.-K. Lee; M. H.-C. Jin

Appl. Phys. Lett. 97, 013306 (2010) https://doi.org/10.1063/1.3458810

Abstract

View articletitled, Negative differential resistance in hydrated deoxyribonucleic acid thin films mediated by diffusion-limited water redox reactions

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Threshold voltage control in organic thin film transistors with dielectric layer modified by a genetically engineered polypeptide

Alex Dezieck; Orb Acton; Kirsty Leong; Ersin Emre Oren; Hong Ma; Candan Tamerler; Mehmet Sarikaya; Alex K.-Y. Jen

Appl. Phys. Lett. 97, 013307 (2010) https://doi.org/10.1063/1.3459978

Abstract

View articletitled, Threshold voltage control in organic thin film transistors with dielectric layer modified by a genetically engineered polypeptide

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Comparison of ultraviolet- and charge-induced degradation phenomena in blue fluorescent organic light emitting diodes

Ruben Seifert; Sebastian Scholz; Björn Lüssem; Karl Leo

Appl. Phys. Lett. 97, 013308 (2010) https://doi.org/10.1063/1.3460285

Abstract

View articletitled, Comparison of ultraviolet- and charge-induced degradation phenomena in blue fluorescent organic light emitting diodes

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DEVICE PHYSICS

Nitrogen doped ${Mg}_{x} {Zn}_{1 - x} O / ZnO$ single heterostructure ultraviolet light-emitting diodes on ZnO substrates

K. Nakahara; S. Akasaka; H. Yuji; K. Tamura; T. Fujii; Y. Nishimoto; D. Takamizu; A. Sasaki; T. Tanabe; H. Takasu; H. Amaike; T. Onuma; S. F. Chichibu; A. Tsukazaki; A. Ohtomo; M. Kawasaki

Appl. Phys. Lett. 97, 013501 (2010) https://doi.org/10.1063/1.3459139

Abstract

View articletitled, Nitrogen doped <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Mg</mtext></mrow><mi>x</mi></msub><msub><mrow><mtext>Zn</mtext></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><mtext>O</mtext><mo>/</mo><mtext>ZnO</mtext></mrow></math> single heterostructure ultraviolet light-emitting diodes on ZnO substrates

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Inverted ${Al}_{0.25} {Ga}_{0.75} N / GaN$ ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy

Kuo-Hua Chang; Jinn-Kong Sheu; Ming-Lun Lee; Shang-Ju Tu; Chih-Ciao Yang; Huan-Shao Kuo; J. H. Yang; Wei-Chih Lai

Appl. Phys. Lett. 97, 013502 (2010) https://doi.org/10.1063/1.3462294

Abstract

View articletitled, Inverted <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Al</mtext></mrow><mrow><mn>0.25</mn></mrow></msub><msub><mrow><mtext>Ga</mtext></mrow><mrow><mn>0.75</mn></mrow></msub><mtext>N</mtext><mo>/</mo><mtext>GaN</mtext></mrow></math> ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy

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p-Si nanowires/ ${SiO}_{2}$ /n-ZnO heterojunction photodiodes

Chun-Ying Huang; Ying-Jay Yang; Ju-Ying Chen; Chun-Hsiung Wang; Yang-Fang Chen; Lu-Sheng Hong; Chie-Sheng Liu; Chia-Yin Wu

Appl. Phys. Lett. 97, 013503 (2010) https://doi.org/10.1063/1.3462319

Abstract

View articletitled, p-Si nanowires/<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>SiO</mtext></mrow><mn>2</mn></msub></mrow></math>/n-ZnO heterojunction photodiodes

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Interface defect-assisted single electron charging (and discharging) dynamics in Ge nanocrystals memories

J. S. de Sousa; R. Peibst; G. A. Farias; J.-P. Leburton; K. R. Hofmann

Appl. Phys. Lett. 97, 013504 (2010) https://doi.org/10.1063/1.3455899

Abstract

View articletitled, Interface defect-assisted single electron charging (and discharging) dynamics in Ge nanocrystals memories

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Nonlinear $p H$ sensitivity of molecular modified transistors

Hila Einati; Roman Novitski; Yosi Shacham-Diamand

Appl. Phys. Lett. 97, 013505 (2010) https://doi.org/10.1063/1.3462318

Abstract

View articletitled, Nonlinear <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>p</mi><mtext>H</mtext></mrow></math> sensitivity of molecular modified transistors

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Integration of ${HfO}_{2}$ on Si/SiC heterojunctions for the gate architecture of SiC power devices

P. M. Gammon; A. Pérez-Tomás; M. R. Jennings; O. J. Guy; N. Rimmer; J. Llobet; N. Mestres; P. Godignon; M. Placidi; M. Zabala; J. A. Covington; P. A. Mawby

Appl. Phys. Lett. 97, 013506 (2010) https://doi.org/10.1063/1.3462932

Abstract

View articletitled, Integration of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>HfO</mtext></mrow><mn>2</mn></msub></mrow></math> on Si/SiC heterojunctions for the gate architecture of SiC power devices

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Planar Hall effect bridge magnetic field sensors

A. D. Henriksen; B. T. Dalslet; D. H. Skieller; K. H. Lee; F. Okkels; M. F. Hansen

Appl. Phys. Lett. 97, 013507 (2010) https://doi.org/10.1063/1.3460290

Abstract

View articletitled, Planar Hall effect bridge magnetic field sensors

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BIOPHYSICS AND BIO-INSPIRED SYSTEMS

Driving method of microtool by horizontally arranged permanent magnets for single cell manipulation

Masaya Hagiwara; Tomohiro Kawahara; Yoko Yamanishi; Fumihito Arai

Appl. Phys. Lett. 97, 013701 (2010) https://doi.org/10.1063/1.3459040

Abstract

View articletitled, Driving method of microtool by horizontally arranged permanent magnets for single cell manipulation

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INTERDISCIPLINARY AND GENERAL PHYSICS

Hysteresis and unusual magnetic properties in the singular Heusler alloy ${Ni}_{45} {Co}_{5} {Mn}_{40} {Sn}_{10}$

Vijay Srivastava; Xian Chen; Richard D. James

Appl. Phys. Lett. 97, 014101 (2010) https://doi.org/10.1063/1.3456562

Abstract

View articletitled, Hysteresis and unusual magnetic properties in the singular Heusler alloy <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Ni</mtext></mrow><mrow><mn>45</mn></mrow></msub><msub><mrow><mtext>Co</mtext></mrow><mn>5</mn></msub><msub><mrow><mtext>Mn</mtext></mrow><mrow><mn>40</mn></mrow></msub><msub><mrow><mtext>Sn</mtext></mrow><mrow><mn>10</mn></mrow></msub></mrow></math>

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Finite element simulation for ultraviolet excimer laser processing of patterned Si/SiGe/Si(100) heterostructures

J. C. Conde; E. Martín; S. Chiussi; F. Gontad; C. Serra; P. González

Appl. Phys. Lett. 97, 014102 (2010) https://doi.org/10.1063/1.3452341

Abstract

View articletitled, Finite element simulation for ultraviolet excimer laser processing of patterned Si/SiGe/Si(100) heterostructures

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Elastocapillary fabrication of three-dimensional microstructures

J. W. van Honschoten; J. W. Berenschot; T. Ondarçuhu; R. G. P. Sanders; J. Sundaram; M. Elwenspoek; N. R. Tas

Appl. Phys. Lett. 97, 014103 (2010) https://doi.org/10.1063/1.3462302

Abstract

View articletitled, Elastocapillary fabrication of three-dimensional microstructures

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Piezoelectric conversion and energy harvesting enhancement by initial energy injection

Mickaël Lallart; Daniel Guyomar

Appl. Phys. Lett. 97, 014104 (2010) https://doi.org/10.1063/1.3462304

Abstract

View articletitled, Piezoelectric conversion and energy harvesting enhancement by initial energy injection

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COMMENTS

Comment on “Observation of space-charge-limited current due to charge generation at interface of molybdenum dioxide and organic layer” [Appl. Phys. Lett. 95, 203306 (2009)]

Yeonjin Yi; Sang Wan Cho; Seong Jun Kang

Appl. Phys. Lett. 97, 016101 (2010) https://doi.org/10.1063/1.3459962

Extract

View articletitled, Comment on “Observation of space-charge-limited current due to charge generation at interface of molybdenum dioxide and organic layer” [Appl. Phys. Lett. 95, 203306 (2009)]

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ERRATA

Erratum: “A complete set of material properties of single domain $0.26 Pb ({In}_{1 / 2} {Nb}_{1 / 2}) O_{3} - 0.46 Pb ({Mg}_{1 / 3} {Nb}_{2 / 3}) O_{3} - 0.28 {PbTiO}_{3}$ single crystals” [Appl. Phys. Lett. 96, 012907 (2010)]

Xiaozhou Liu; Shujun Zhang; Jun Luo; Thomas R. Shrout; Wenwu Cao

Appl. Phys. Lett. 97, 019901 (2010) https://doi.org/10.1063/1.3459974

Extract

View articletitled, Erratum: “A complete set of material properties of single domain <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>0.26</mn><mtext>Pb</mtext><mrow><mo>(</mo><mrow><msub><mrow><mtext>In</mtext></mrow><mrow><mn>1</mn><mo>/</mo><mn>2</mn></mrow></msub><msub><mrow><mtext>Nb</mtext></mrow><mrow><mn>1</mn><mo>/</mo><mn>2</mn></mrow></msub></mrow><mo>)</mo></mrow><msub><mtext>O</mtext><mn>3</mn></msub><mo>–</mo><mn>0.46</mn><mtext>Pb</mtext><mrow><mo>(</mo><mrow><msub><mrow><mtext>Mg</mtext></mrow><mrow><mn>1</mn><mo>/</mo><mn>3</mn></mrow></msub><msub><mrow><mtext>Nb</mtext></mrow><mrow><mn>2</mn><mo>/</mo><mn>3</mn></mrow></msub></mrow><mo>)</mo></mrow><msub><mtext>O</mtext><mn>3</mn></msub><mo>–</mo><mn>0.28</mn><msub><mrow><mtext>PbTiO</mtext></mrow><mn>3</mn></msub></mrow></math> single crystals” [Appl. Phys. Lett. 96, 012907 (2010)]

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

ORGANIC ELECTRONICS AND PHOTONICS

DEVICE PHYSICS

BIOPHYSICS AND BIO-INSPIRED SYSTEMS

INTERDISCIPLINARY AND GENERAL PHYSICS

COMMENTS

ERRATA

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