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LASERS, OPTICS, AND OPTOELECTRONICS

Surface wave Cherenkov maser based on a periodic lattice

I. V. Konoplev; L. Fisher; A. W. Cross; A. D. R. Phelps; K. Ronald; C. W. Robertson

Appl. Phys. Lett. 96, 261101 (2010) https://doi.org/10.1063/1.3456618

Abstract

View articletitled, Surface wave Cherenkov maser based on a periodic lattice

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Free-standing ${Al}_{x} {Ga}_{1 - x} As$ heterostructures by gas-phase etching of germanium

Garrett D. Cole; Yu Bai; Markus Aspelmeyer; Eugene A. Fitzgerald

Appl. Phys. Lett. 96, 261102 (2010) https://doi.org/10.1063/1.3455104

Abstract

View articletitled, Free-standing <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Al</mtext></mrow><mtext>x</mtext></msub><msub><mrow><mtext>Ga</mtext></mrow><mrow><mn>1</mn><mo>−</mo><mtext>x</mtext></mrow></msub><mtext>As</mtext></mrow></math> heterostructures by gas-phase etching of germanium

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Femtosecond laser near-field nanoablation patterning using Mie resonance high dielectric constant particle with small size parameter

Yuto Tanaka; Go Obara; Akira Zenidaka; Mitsuhiro Terakawa; Minoru Obara

Appl. Phys. Lett. 96, 261103 (2010) https://doi.org/10.1063/1.3458704

Abstract

View articletitled, Femtosecond laser near-field nanoablation patterning using Mie resonance high dielectric constant particle with small size parameter

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Reduction in the efficiency droop effect of a light-emitting diode through surface plasmon coupling

Chih-Feng Lu; Che-Hao Liao; Chih-Yen Chen; Chieh Hsieh; Yean-Woei Kiang; C. C. Yang

Appl. Phys. Lett. 96, 261104 (2010) https://doi.org/10.1063/1.3459151

Abstract

View articletitled, Reduction in the efficiency droop effect of a light-emitting diode through surface plasmon coupling

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Enhancement of electroluminescence in GaN-based light-emitting diodes by metallic nanoparticles

Jun-Ho Sung; Jeong Su Yang; Bo-Soon Kim; Chul-Hyun Choi; Min-Woo Lee; Seung-Gol Lee; Se-Geun Park; El-Hang Lee; Beom-Hoan O

Appl. Phys. Lett. 96, 261105 (2010) https://doi.org/10.1063/1.3457349

Abstract

View articletitled, Enhancement of electroluminescence in GaN-based light-emitting diodes by metallic nanoparticles

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High power single-lateral-mode operation of InAs quantum dot based ridge type laser diodes by utilizing a double bend waveguide structure

Kyoung Chan Kim; Il Ki Han; Jung Il Lee; Tae Geun Kim

Appl. Phys. Lett. 96, 261106 (2010) https://doi.org/10.1063/1.3459150

Abstract

View articletitled, High power single-lateral-mode operation of InAs quantum dot based ridge type laser diodes by utilizing a double bend waveguide structure

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Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates

E. Cicek; Z. Vashaei; R. McClintock; C. Bayram; M. Razeghi

Appl. Phys. Lett. 96, 261107 (2010) https://doi.org/10.1063/1.3457783

Abstract

View articletitled, Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates

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Nanopyramid surface plasmon resonance sensors

Pei-Yu Chung; Tzung-Hua Lin; Gregory Schultz; Christopher Batich; Peng Jiang

Appl. Phys. Lett. 96, 261108 (2010) https://doi.org/10.1063/1.3460273

Abstract

View articletitled, Nanopyramid surface plasmon resonance sensors

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Effective light trapping in polycrystalline silicon thin-film solar cells by means of rear localized surface plasmons

Zi Ouyang; Supriya Pillai; Fiona Beck; Oliver Kunz; Sergey Varlamov; Kylie R. Catchpole; Patrick Campbell; Martin A. Green

Appl. Phys. Lett. 96, 261109 (2010) https://doi.org/10.1063/1.3460288

Abstract

View articletitled, Effective light trapping in polycrystalline silicon thin-film solar cells by means of rear localized surface plasmons

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Spatially resolved ultrafast transport current in GaAs photoswitches

L. Prechtel; S. Manus; D. Schuh; W. Wegscheider; A. W. Holleitner

Appl. Phys. Lett. 96, 261110 (2010) https://doi.org/10.1063/1.3458819

Abstract

View articletitled, Spatially resolved ultrafast transport current in GaAs photoswitches

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Directional dependence of the second harmonic response in two-dimensional nonlinear photonic crystals

P. Molina; M. O. Ramírez; B. J. García; L. E. Bausá

Appl. Phys. Lett. 96, 261111 (2010) https://doi.org/10.1063/1.3459975

Abstract

View articletitled, Directional dependence of the second harmonic response in two-dimensional nonlinear photonic crystals

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PLASMAS AND ELECTRICAL DISCHARGES

Heating dynamics and extreme ultraviolet radiation emission of laser-produced Sn plasmas

S. Yuspeh; K. L. Sequoia; Y. Tao; M. S. Tillack; R. A. Burdt; F. Najmabadi

Appl. Phys. Lett. 96, 261501 (2010) https://doi.org/10.1063/1.3458696

Abstract

View articletitled, Heating dynamics and extreme ultraviolet radiation emission of laser-produced Sn plasmas

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Size controlled synthesis of Ge nanocrystals in ${SiO}_{2}$ at temperatures below $400 ° C$ using magnetron sputtering

B. Zhang; S. Shrestha; M. A. Green; G. Conibeer

Appl. Phys. Lett. 96, 261901 (2010) https://doi.org/10.1063/1.3457864

Abstract

View articletitled, Size controlled synthesis of Ge nanocrystals in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>SiO</mtext></mrow><mn>2</mn></msub></mrow></math> at temperatures below <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>400</mn><mtext> </mtext><mo>°</mo><mtext>C</mtext></mrow></math> using magnetron sputtering

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Diaspore crystal structure and compressibility at high pressures and high temperature

Ming Li; Karim Snoussi; Lixin Li; Huixin Wang; Wuming Yang; Chunxiao Gao

Appl. Phys. Lett. 96, 261902 (2010) https://doi.org/10.1063/1.3457919

Abstract

View articletitled, Diaspore crystal structure and compressibility at high pressures and high temperature

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In situ evolution of stress gradients in Cu films induced by capping layers

Conal E. Murray; Paul R. Besser; Christian Witt; Michael Toney

Appl. Phys. Lett. 96, 261903 (2010) https://doi.org/10.1063/1.3458864

Abstract

View articletitled, In situ evolution of stress gradients in Cu films induced by capping layers

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Composition measurement of the Ni-silicide transient phase by atom probe tomography

K. Hoummada; I. Blum; D. Mangelinck; A. Portavoce

Appl. Phys. Lett. 96, 261904 (2010) https://doi.org/10.1063/1.3457995

Abstract

View articletitled, Composition measurement of the Ni-silicide transient phase by atom probe tomography

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Evidence of graphene-like electronic signature in silicene nanoribbons

Paola De Padova; Claudio Quaresima; Carlo Ottaviani; Polina M. Sheverdyaeva; Paolo Moras; Carlo Carbone; Dinesh Topwal; Bruno Olivieri; Abdelkader Kara; Hamid Oughaddou; Bernard Aufray; Guy Le Lay

Appl. Phys. Lett. 96, 261905 (2010) https://doi.org/10.1063/1.3459143

Abstract

View articletitled, Evidence of graphene-like electronic signature in silicene nanoribbons

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$M_{N + 1} {A X}_{N} (M = Ti, A = Al, X = H)$ phase class materials with hydrogen: ${Ti}_{4} {AlH}_{3}$ and ${Ti}_{3} {AlH}_{2}$

M. Ramzan; R. Ahuja

Appl. Phys. Lett. 96, 261906 (2010) https://doi.org/10.1063/1.3459960

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>M</mi><mrow><mi>N</mi><mo>+</mo><mn>1</mn></mrow></msub><msub><mrow><mi>A</mi><mi>X</mi></mrow><mi>N</mi></msub><mrow><mo>(</mo><mrow><mi>M</mi><mo>=</mo><mtext>Ti</mtext><mo>,</mo><mi>A</mi><mo>=</mo><mtext>Al</mtext><mo>,</mo><mi>X</mi><mo>=</mo><mtext>H</mtext></mrow><mo>)</mo></mrow></mrow></math> phase class materials with hydrogen: <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Ti</mtext></mrow><mn>4</mn></msub><msub><mrow><mtext>AlH</mtext></mrow><mn>3</mn></msub></mrow></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Ti</mtext></mrow><mn>3</mn></msub><msub><mrow><mtext>AlH</mtext></mrow><mn>2</mn></msub></mrow></math>

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Magnified hard x-ray image in one dimension

James Britten; Zhechuan Feng; Gu Xu

Appl. Phys. Lett. 96, 261907 (2010) https://doi.org/10.1063/1.3459969

Abstract

View articletitled, Magnified hard x-ray image in one dimension

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Optical switching of a metamaterial by temperature controlling

Wan-xia Huang; Xiao-gang Yin; Cheng-ping Huang; Qian-jin Wang; Teng-fei Miao; Yong-yuan Zhu

Appl. Phys. Lett. 96, 261908 (2010) https://doi.org/10.1063/1.3458706

Abstract

View articletitled, Optical switching of a metamaterial by temperature controlling

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Band alignment at ${Sb}_{2} S_{3} / Cu (In, Ga) {Se}_{2}$ heterojunctions and electronic characteristics of solar cell devices based on them

D. Kieven; A. Grimm; I. Lauermann; T. Rissom; R. Klenk

Appl. Phys. Lett. 96, 262101 (2010) https://doi.org/10.1063/1.3457439

Abstract

View articletitled, Band alignment at <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Sb</mtext></mrow><mn>2</mn></msub><msub><mtext>S</mtext><mn>3</mn></msub><mo>/</mo><mtext>Cu</mtext><mrow><mo>(</mo><mrow><mtext>In</mtext><mo>,</mo><mtext>Ga</mtext></mrow><mo>)</mo></mrow><msub><mrow><mtext>Se</mtext></mrow><mn>2</mn></msub></mrow></math> heterojunctions and electronic characteristics of solar cell devices based on them

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Growth, electrical rectification, and gate control in axial in situ doped p-n junction germanium nanowires

Son T. Le; P. Jannaty; A. Zaslavsky; S. A. Dayeh; S. T. Picraux

Appl. Phys. Lett. 96, 262102 (2010) https://doi.org/10.1063/1.3457862

Abstract

View articletitled, Growth, electrical rectification, and gate control in axial in situ doped p-n junction germanium nanowires

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High thermoelectric power factor in Fe-substituted ${Mo}_{3} {Sb}_{7}$

C. Candolfi; B. Lenoir; A. Dauscher; B. Malaman; E. Guilmeau; J. Hejtmanek; J. Tobola

Appl. Phys. Lett. 96, 262103 (2010) https://doi.org/10.1063/1.3457920

Abstract

View articletitled, High thermoelectric power factor in Fe-substituted <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Mo</mtext></mrow><mn>3</mn></msub><msub><mrow><mtext>Sb</mtext></mrow><mn>7</mn></msub></mrow></math>

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Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress

Yu-Chun Chen; Ting-Chang Chang; Hung-Wei Li; Shih-Ching Chen; Jin Lu; Wan-Fang Chung; Ya-Hsiang Tai; Tseung-Yuen Tseng

Appl. Phys. Lett. 96, 262104 (2010) https://doi.org/10.1063/1.3457996

Abstract

View articletitled, Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress

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Intrinsic carrier mobility in amorphous In–Ga–Zn–O thin-film transistors determined by combined field-effect technique

Mutsumi Kimura; Toshio Kamiya; Takashi Nakanishi; Kenji Nomura; Hideo Hosono

Appl. Phys. Lett. 96, 262105 (2010) https://doi.org/10.1063/1.3455072

Abstract

View articletitled, Intrinsic carrier mobility in amorphous In–Ga–Zn–O thin-film transistors determined by combined field-effect technique

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Evidence for surface states in a single 3 nm diameter ${Co}_{3} O_{4}$ nanowire

Yi Sun; Ji-Yong Yang; Rui Xu; Lin He; Rui-Fen Dou; Jia-Cai Nie

Appl. Phys. Lett. 96, 262106 (2010) https://doi.org/10.1063/1.3457449

Abstract

View articletitled, Evidence for surface states in a single 3 nm diameter <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Co</mtext></mrow><mn>3</mn></msub><msub><mtext>O</mtext><mn>4</mn></msub></mrow></math> nanowire

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Enhanced retention characteristic of ${NiSi}_{2} / {SiN}_{x}$ compound nanocrystal memory

Jin Lu (闾锦); Ting-Chang Chang (張鼎張); Yu-Ting Chen (陳侑廷); Jheng-Jie Huang; Po-Chun Yang; Shih-Ching Chen; Hui-Chun Huang; Der-Shin Gan; New-Jin Ho; Yi Shi; Ann-Kuo Chu

Appl. Phys. Lett. 96, 262107 (2010) https://doi.org/10.1063/1.3457870

Abstract

View articletitled, Enhanced retention characteristic of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>NiSi</mtext></mrow><mn>2</mn></msub><mo>/</mo><msub><mrow><mtext>SiN</mtext></mrow><mtext>x</mtext></msub></mrow></math> compound nanocrystal memory

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Photoexcited charge current for the presence of pure spin current

Yu Liu; Yonghai Chen; Zhanguo Wang

Appl. Phys. Lett. 96, 262108 (2010) https://doi.org/10.1063/1.3455887

Abstract

View articletitled, Photoexcited charge current for the presence of pure spin current

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The influence of ${SiO}_{x}$ and ${SiN}_{x}$ passivation on the negative bias stability of Hf–In–Zn–O thin film transistors under illumination

Joon Seok Park; Tae Sang Kim; Kyoung Seok Son; Kwang-Hee Lee; Wan-Joo Maeng; Hyun-Suk Kim; Eok Su Kim; Kyung-Bae Park; Jong-Baek Seon; Woong Choi; Myung Kwan Ryu; Sang Yoon Lee

Appl. Phys. Lett. 96, 262109 (2010) https://doi.org/10.1063/1.3435482

Abstract

View articletitled, The influence of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>SiO</mtext></mrow><mtext>x</mtext></msub></mrow></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>SiN</mtext></mrow><mtext>x</mtext></msub></mrow></math> passivation on the negative bias stability of Hf–In–Zn–O thin film transistors under illumination

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Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

Min-Chen Chen; Ting-Chang Chang; Chih-Tsung Tsai; Sheng-Yao Huang; Shih-Ching Chen; Chih-Wei Hu; Simon M. Sze; Ming-Jinn Tsai

Appl. Phys. Lett. 96, 262110 (2010) https://doi.org/10.1063/1.3456379

Abstract

View articletitled, Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

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Crystallographic orientation engineering in silicon-on-insulator substrates

T. Signamarcheix; B. Biasse; A.-M. Papon; E. Nolot; F. Mazen; J. Leveneur; O. Faynot; L. Clavelier; B. Ghyselen

Appl. Phys. Lett. 96, 262111 (2010) https://doi.org/10.1063/1.3459966

Abstract

View articletitled, Crystallographic orientation engineering in silicon-on-insulator substrates

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Direct-search deep level photothermal spectroscopy: An enhanced reliability method for overlapped semiconductor defect state characterization

Jun Xia; Andreas Mandelis

Appl. Phys. Lett. 96, 262112 (2010) https://doi.org/10.1063/1.3458827

Abstract

View articletitled, Direct-search deep level photothermal spectroscopy: An enhanced reliability method for overlapped semiconductor defect state characterization

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Different nonvolatile memory effects in epitaxial $Pt / {PbZr}_{0.3} {Ti}_{0.7} O_{3} / LSCO$ heterostructures

Jinsik Choi; Jin-Soo Kim; Inrok Hwang; Sahwan Hong; Ik-Su Byun; Seung-Woong Lee; Sung-Oong Kang; Bae Ho Park

Appl. Phys. Lett. 96, 262113 (2010) https://doi.org/10.1063/1.3460141

Abstract

View articletitled, Different nonvolatile memory effects in epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mtext>Pt</mtext><mo>/</mo><msub><mrow><mtext>PbZr</mtext></mrow><mrow><mn>0.3</mn></mrow></msub><msub><mrow><mtext>Ti</mtext></mrow><mrow><mn>0.7</mn></mrow></msub><msub><mtext>O</mtext><mn>3</mn></msub><mo>/</mo><mtext>LSCO</mtext></mrow></math> heterostructures

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Control of transmission in disordered graphene nanojunctions through stochastic resonance

Luo-Luo Jiang; Liang Huang; Rui Yang; Ying-Cheng Lai

Appl. Phys. Lett. 96, 262114 (2010) https://doi.org/10.1063/1.3460291

Abstract

View articletitled, Control of transmission in disordered graphene nanojunctions through stochastic resonance

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MAGNETISM AND SUPERCONDUCTIVITY

Boron diffusion in magnetic tunnel junctions with MgO (001) barriers and CoFeB electrodes

H. Kurt; K. Rode; K. Oguz; M. Boese; C. C. Faulkner; J. M. D. Coey

Appl. Phys. Lett. 96, 262501 (2010) https://doi.org/10.1063/1.3457475

Abstract

View articletitled, Boron diffusion in magnetic tunnel junctions with MgO (001) barriers and CoFeB electrodes

Supplementary Material

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Tuning of magnetism in ferromagnetic thin films by reversing the functional groups of molecular underlayer

Jung-Chi Tai; Jang-Chang Huang; Yin-Ming Chang; Kai-Shin Li; Jhen-Yong Hong; Sheng-Syun Wong; Wen-Chung Chiang; Minn-Tsong Lin

Appl. Phys. Lett. 96, 262502 (2010) https://doi.org/10.1063/1.3457907

Abstract

View articletitled, Tuning of magnetism in ferromagnetic thin films by reversing the functional groups of molecular underlayer

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Interfacial barrier in manganite junctions with different crystallographic orientations

W. W. Gao; A. D. Wei; J. R. Sun; D. S. Shang; J. Wang; T. Y. Zhao; B. G. Shen

Appl. Phys. Lett. 96, 262503 (2010) https://doi.org/10.1063/1.3447797

Abstract

View articletitled, Interfacial barrier in manganite junctions with different crystallographic orientations

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Reduced room-temperature ferromagnetism in intermediate conducting regime of V doped ZnO

S. H. Liu; H. S. Hsu; G. Venkataiah; X. Qi; C. R. Lin; J. F. Lee; K. S. Liang; J. C. A. Huang

Appl. Phys. Lett. 96, 262504 (2010) https://doi.org/10.1063/1.3456381

Abstract

View articletitled, Reduced room-temperature ferromagnetism in intermediate conducting regime of V doped ZnO

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Influence of edges on the exchange bias properties of ferromagnetic/antiferromagnetic nanodots

V. Baltz; G. Gaudin; P. Somani; B. Dieny

Appl. Phys. Lett. 96, 262505 (2010) https://doi.org/10.1063/1.3449123

Abstract

View articletitled, Influence of edges on the exchange bias properties of ferromagnetic/antiferromagnetic nanodots

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Tunneling processes in thin MgO magnetic junctions

J. M. Teixeira; J. Ventura; J. P. Araujo; J. B. Sousa; P. Wisniowski; P. P. Freitas

Appl. Phys. Lett. 96, 262506 (2010) https://doi.org/10.1063/1.3458701

Abstract

View articletitled, Tunneling processes in thin MgO magnetic junctions

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Nature of short-range ferromagnetic ordered state above $T_{C}$ in double perovskite ${La}_{2} {NiMnO}_{6}$

S. M. Zhou; Y. Q. Guo; J. Y. Zhao; S. Y. Zhao; L. Shi

Appl. Phys. Lett. 96, 262507 (2010) https://doi.org/10.1063/1.3459141

Abstract

View articletitled, Nature of short-range ferromagnetic ordered state above <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>T</mi><mi>C</mi></msub></mrow></math> in double perovskite <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>La</mtext></mrow><mn>2</mn></msub><msub><mrow><mtext>NiMnO</mtext></mrow><mn>6</mn></msub></mrow></math>

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In situ tunneling measurements in a transmission electron microscope on nanomagnetic tunnel junctions

J. W. Lau; P. Morrow; J. C. Read; V. Höink; W. F. Egelhoff; L. Huang; Y. Zhu

Appl. Phys. Lett. 96, 262508 (2010) https://doi.org/10.1063/1.3446841

Abstract

View articletitled, In situ tunneling measurements in a transmission electron microscope on nanomagnetic tunnel junctions

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Effect of structural relaxation and oxidation conditions on interlayer exchange coupling in $Fe | MgO | Fe$ tunnel junctions

H. X. Yang; M. Chshiev; A. Kalitsov; A. Schuhl; W. H. Butler

Appl. Phys. Lett. 96, 262509 (2010) https://doi.org/10.1063/1.3459148

Abstract

View articletitled, Effect of structural relaxation and oxidation conditions on interlayer exchange coupling in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mtext>Fe</mtext><mrow><mo>|</mo><mrow><mtext>MgO</mtext></mrow><mo>|</mo></mrow><mtext>Fe</mtext></mrow></math> tunnel junctions

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Asymmetric magnetic NOT gate and shift registers for high density data storage

Huang T. Zeng; D. Read; L. O’Brien; J. Sampaio; E. R. Lewis; D. Petit; R. P. Cowburn

Appl. Phys. Lett. 96, 262510 (2010) https://doi.org/10.1063/1.3457998

Abstract

View articletitled, Asymmetric magnetic NOT gate and shift registers for high density data storage

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Direct-write, focused ion beam-deposited, 7 K superconducting C–Ga–O nanowire

Pashupati Dhakal; G. McMahon; S. Shepard; T. Kirkpatrick; J. I. Oh; M. J. Naughton

Appl. Phys. Lett. 96, 262511 (2010) https://doi.org/10.1063/1.3458863

Abstract

View articletitled, Direct-write, focused ion beam-deposited, 7 K superconducting C–Ga–O nanowire

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High magnetomechanical coupling on magnetic microwire for sensors with biological applications

P. Marín; M. Marcos; A. Hernando

Appl. Phys. Lett. 96, 262512 (2010) https://doi.org/10.1063/1.3459140

Abstract

View articletitled, High magnetomechanical coupling on magnetic microwire for sensors with biological applications

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DIELECTRICS AND FERROELECTRICITY

Transition of stable rectification to resistive-switching in $Ti / {TiO}_{2} / Pt$ oxide diode

Jiun-Jia Huang; Chih-Wei Kuo; Wei-Chen Chang; Tuo-Hung Hou

Appl. Phys. Lett. 96, 262901 (2010) https://doi.org/10.1063/1.3457866

Abstract

View articletitled, Transition of stable rectification to resistive-switching in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mtext>Ti</mtext><mo>/</mo><msub><mrow><mtext>TiO</mtext></mrow><mn>2</mn></msub><mo>/</mo><mtext>Pt</mtext></mrow></math> oxide diode

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Effect of electrode configurations on the process-induced imprint behavior of epitaxial $Pb ({Zr}_{0.52} {Ti}_{0.48}) O_{3}$ capacitors

Feng Chen; Xuelian Tan; Zhen Huang; Xiaofeng Xuan; Wenbin Wu

Appl. Phys. Lett. 96, 262902 (2010) https://doi.org/10.1063/1.3458599

Abstract

View articletitled, Effect of electrode configurations on the process-induced imprint behavior of epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mtext>Pb</mtext><mrow><mo>(</mo><mrow><msub><mrow><mtext>Zr</mtext></mrow><mrow><mn>0.52</mn></mrow></msub><msub><mrow><mtext>Ti</mtext></mrow><mrow><mn>0.48</mn></mrow></msub></mrow><mo>)</mo></mrow><msub><mtext>O</mtext><mn>3</mn></msub></mrow></math> capacitors

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Temperature-dependent Raman scattering of ${KTa}_{1 - x} {Nb}_{x} O_{3}$ thin films

A. Bartasyte; J. Kreisel; W. Peng; M. Guilloux-Viry

Appl. Phys. Lett. 96, 262903 (2010) https://doi.org/10.1063/1.3455326

Abstract

View articletitled, Temperature-dependent Raman scattering of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>KTa</mtext></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mrow><mtext>Nb</mtext></mrow><mi>x</mi></msub><msub><mtext>O</mtext><mn>3</mn></msub></mrow></math> thin films

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Effects of electrical stress on the leakage current characteristics of multilayer capacitor structures

Soon-Wook Kim; Sung Kyun Lee; Young Do Kim; Sibum Kim

Appl. Phys. Lett. 96, 262904 (2010) https://doi.org/10.1063/1.3456731

Abstract

View articletitled, Effects of electrical stress on the leakage current characteristics of multilayer capacitor structures

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Adsorption-controlled growth of ${BiMnO}_{3}$ films by molecular-beam epitaxy

J. H. Lee; X. Ke; R. Misra; J. F. Ihlefeld; X. S. Xu; Z. G. Mei; T. Heeg; M. Roeckerath; J. Schubert; Z. K. Liu; J. L. Musfeldt; P. Schiffer; D. G. Schlom

Appl. Phys. Lett. 96, 262905 (2010) https://doi.org/10.1063/1.3457786

Abstract

View articletitled, Adsorption-controlled growth of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>BiMnO</mtext></mrow><mn>3</mn></msub></mrow></math> films by molecular-beam epitaxy

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NANOSCALE SCIENCE AND DESIGN

Adiabatic embedment of nanomechanical resonators in photonic microring cavities

Chi Xiong; Wolfram Pernice; Mo Li; Michael Rooks; Hong X. Tang

Appl. Phys. Lett. 96, 263101 (2010) https://doi.org/10.1063/1.3458692

Abstract

View articletitled, Adiabatic embedment of nanomechanical resonators in photonic microring cavities

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Nanofluidic diode in a suspended nanoparticle crystal

Yinhua Lei; Wei Wang; Wengang Wu; Zhihong Li

Appl. Phys. Lett. 96, 263102 (2010) https://doi.org/10.1063/1.3456563

Abstract

View articletitled, Nanofluidic diode in a suspended nanoparticle crystal

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Anisotropic and enhanced absorptive nonlinearities in a macroscopic film induced by aligned gold nanorods

Jiafang Li; Siyun Liu; Ye Liu; Fei Zhou; Zhi-Yuan Li

Appl. Phys. Lett. 96, 263103 (2010) https://doi.org/10.1063/1.3458693

Abstract

View articletitled, Anisotropic and enhanced absorptive nonlinearities in a macroscopic film induced by aligned gold nanorods

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Hydrothermal synthesis of ordered single-crystalline rutile ${TiO}_{2}$ nanorod arrays on different substrates

Hong-En Wang; Zhenhua Chen; Yu Hang Leung; Chunyan Luan; Chaoping Liu; Yongbing Tang; Ce Yan; Wenjun Zhang; Juan Antonio Zapien; Igor Bello; Shuit-Tong Lee

Appl. Phys. Lett. 96, 263104 (2010) https://doi.org/10.1063/1.3442913

Abstract

View articletitled, Hydrothermal synthesis of ordered single-crystalline rutile <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>TiO</mtext></mrow><mn>2</mn></msub></mrow></math> nanorod arrays on different substrates

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A simple alcohol-chemical vapor deposition synthesis of single-layer graphenes using flash cooling

Yasumitsu Miyata; Keiichi Kamon; Kazunori Ohashi; Ryo Kitaura; Masamichi Yoshimura; Hisanori Shinohara

Appl. Phys. Lett. 96, 263105 (2010) https://doi.org/10.1063/1.3458797

Abstract

View articletitled, A simple alcohol-chemical vapor deposition synthesis of single-layer graphenes using flash cooling

Supplementary Material

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Anisotropic surface plasmon excitation in Au/silica nanowire

Chien-Ting Wu; Ming-Wen Chu; Sheng-Bo Wang; Ming-Shien Hu; Kuei-Hsien Chen; Li-Chyong Chen; Chun-Wei Chen; Cheng-Hsuan Chen

Appl. Phys. Lett. 96, 263106 (2010) https://doi.org/10.1063/1.3456529

Abstract

View articletitled, Anisotropic surface plasmon excitation in Au/silica nanowire

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Current anisotropy of carbon nanotube diodes: Voltage and work function dependence

David J. Perello; Seong Chu Lim; Seung Jin Chae; Innam Lee; Moon. J. Kim; Young Hee Lee; Minhee Yun

Appl. Phys. Lett. 96, 263107 (2010) https://doi.org/10.1063/1.3458818

Abstract

View articletitled, Current anisotropy of carbon nanotube diodes: Voltage and work function dependence

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Nanoscale modulation of electronic states across unit cell steps on the surface of an epitaxial colossal magnetoresistance manganite film

Abhimanyu Rana; Kashinath Bogle; Onkar Game; Shankar Patil; Nagarajan Valanoor; Satishchandra Ogale

Appl. Phys. Lett. 96, 263108 (2010) https://doi.org/10.1063/1.3455886

Abstract

View articletitled, Nanoscale modulation of electronic states across unit cell steps on the surface of an epitaxial colossal magnetoresistance manganite film

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Nanostructured interfaces in polymer solar cells

W. Wiedemann; L. Sims; A. Abdellah; A. Exner; R. Meier; K. P. Musselman; J. L. MacManus-Driscoll; P. Müller-Buschbaum; G. Scarpa; P. Lugli; L. Schmidt-Mende

Appl. Phys. Lett. 96, 263109 (2010) https://doi.org/10.1063/1.3458809

Abstract

View articletitled, Nanostructured interfaces in polymer solar cells

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Ambipolar graphene field effect transistors by local metal side gates

J. F. Tian; L. A. Jauregui; G. Lopez; H. Cao; Y. P. Chen

Appl. Phys. Lett. 96, 263110 (2010) https://doi.org/10.1063/1.3459136

Abstract

View articletitled, Ambipolar graphene field effect transistors by local metal side gates

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Ion-sculpting of nanopores in amorphous metals, semiconductors, and insulators

H. Bola George; David P. Hoogerheide; Charbel S. Madi; David C. Bell; Jene A. Golovchenko; Michael J. Aziz

Appl. Phys. Lett. 96, 263111 (2010) https://doi.org/10.1063/1.3441406

Abstract

View articletitled, Ion-sculpting of nanopores in amorphous metals, semiconductors, and insulators

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Nanoscale space charge generation in local oxidation nanolithography

Marco Chiesa; Ricardo Garcia

Appl. Phys. Lett. 96, 263112 (2010) https://doi.org/10.1063/1.3459976

Abstract

View articletitled, Nanoscale space charge generation in local oxidation nanolithography

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Phonon wave-packet interference and phonon tunneling based energy transport across nanostructured thin films

Z. T. Tian; B. E. White, Jr.; Y. Sun

Appl. Phys. Lett. 96, 263113 (2010) https://doi.org/10.1063/1.3458831

Abstract

View articletitled, Phonon wave-packet interference and phonon tunneling based energy transport across nanostructured thin films

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Simultaneous force and current mapping of the $Si (111) - (7 \times 7)$ surface by dynamic force microscopy

Yoshiaki Sugimoto; Insook Yi; Ken-ichi Morita; Masayuki Abe; Seizo Morita

Appl. Phys. Lett. 96, 263114 (2010) https://doi.org/10.1063/1.3457997

Abstract

View articletitled, Simultaneous force and current mapping of the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mtext>Si</mtext><mrow><mo>(</mo><mrow><mn>111</mn></mrow><mo>)</mo></mrow><mtext>-</mtext><mrow><mo>(</mo><mrow><mn>7</mn><mo>×</mo><mn>7</mn></mrow><mo>)</mo></mrow></mrow></math> surface by dynamic force microscopy

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High extraction efficiency GaN-based light-emitting diodes on embedded ${SiO}_{2}$ nanorod array and nanoscale patterned sapphire substrate

Hung-Wen Huang; Jhi-Kai Huang; Shou-Yi Kuo; Kang-Yuan Lee; Hao-Chung Kuo

Appl. Phys. Lett. 96, 263115 (2010) https://doi.org/10.1063/1.3456385

Abstract

View articletitled, High extraction efficiency GaN-based light-emitting diodes on embedded <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>SiO</mtext></mrow><mn>2</mn></msub></mrow></math> nanorod array and nanoscale patterned sapphire substrate

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ORGANIC ELECTRONICS AND PHOTONICS

Solvent-free, direct printing of organic semiconductors in atmosphere

Shaurjo Biswas; Kevin P. Pipe; Max Shtein

Appl. Phys. Lett. 96, 263301 (2010) https://doi.org/10.1063/1.3455840

Abstract

View articletitled, Solvent-free, direct printing of organic semiconductors in atmosphere

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Light-emitting dendrimer film morphology: A neutron reflectivity study

S. V. Vickers; H. Barcena; K. A. Knights; R. K. Thomas; J.-C. Ribierre; S. Gambino; I. D. W. Samuel; P. L. Burn; Giovanna Fragneto

Appl. Phys. Lett. 96, 263302 (2010) https://doi.org/10.1063/1.3457438

Abstract

View articletitled, Light-emitting dendrimer film morphology: A neutron reflectivity study

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Intense photoluminescence from pentacene monolayers

Rui He; Nancy G. Tassi; Graciela B. Blanchet; Aron Pinczuk

Appl. Phys. Lett. 96, 263303 (2010) https://doi.org/10.1063/1.3458816

Abstract

View articletitled, Intense photoluminescence from pentacene monolayers

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Surface-emitting dye-doped polymer laser coupled with stimulated resonant Raman scattering

Hisao Yanagi; Hidetaka Miyamoto; Atsushi Ishizumi; Satoshi Tomita; Kenichi Yamashita; Kunishige Oe

Appl. Phys. Lett. 96, 263304 (2010) https://doi.org/10.1063/1.3459967

Abstract

View articletitled, Surface-emitting dye-doped polymer laser coupled with stimulated resonant Raman scattering

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DEVICE PHYSICS

Self-aligned imprint lithography for top-gate amorphous silicon thin-film transistor fabrication

E. Lausecker; Y. Huang; T. Fromherz; J. C. Sturm; S. Wagner

Appl. Phys. Lett. 96, 263501 (2010) https://doi.org/10.1063/1.3457446

Abstract

View articletitled, Self-aligned imprint lithography for top-gate amorphous silicon thin-film transistor fabrication

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Acoustic far-field focusing effect for two-dimensional graded negative refractive-index sonic crystals

Shasha Peng; Zhaojian He; Han Jia; Anqi Zhang; Chunyin Qiu; Manzhu Ke; Zhengyou Liu

Appl. Phys. Lett. 96, 263502 (2010) https://doi.org/10.1063/1.3457447

Abstract

View articletitled, Acoustic far-field focusing effect for two-dimensional graded negative refractive-index sonic crystals

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Mechanism for excess noise in mixed tunneling and avalanche breakdown of silicon

Andrew Pan; Dee-Son Pan; Chi On Chui

Appl. Phys. Lett. 96, 263503 (2010) https://doi.org/10.1063/1.3457468

Abstract

View articletitled, Mechanism for excess noise in mixed tunneling and avalanche breakdown of silicon

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Electrical nanocharacterization of copper tetracyanoquinodimethane layers dedicated to resistive random access memories

Damien Deleruyelle; Christophe Muller; Julien Amouroux; Robert Müller

Appl. Phys. Lett. 96, 263504 (2010) https://doi.org/10.1063/1.3458596

Abstract

View articletitled, Electrical nanocharacterization of copper tetracyanoquinodimethane layers dedicated to resistive random access memories

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Stochastic base doping and quantum-well enhancement of recombination in an n-p-n light-emitting transistor or transistor laser

H. W. Then; C. H. Wu; M. Feng; N. Holonyak, Jr.; G. Walter

Appl. Phys. Lett. 96, 263505 (2010) https://doi.org/10.1063/1.3458708

Abstract

View articletitled, Stochastic base doping and quantum-well enhancement of recombination in an n-p-n light-emitting transistor or transistor laser

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Effects of cathode buffer layers on the efficiency of bulk-heterojunction solar cells

Ching-Chun Chang; Chi-Feng Lin; Jian-Ming Chiou; Tzung-Han Ho; Yian Tai; Jiun-Haw Lee; Yang-Fang Chen; Juen-Kai Wang; Li-Chyong Chen; Kuei-Hsien Chen

Appl. Phys. Lett. 96, 263506 (2010) https://doi.org/10.1063/1.3456530

Abstract

View articletitled, Effects of cathode buffer layers on the efficiency of bulk-heterojunction solar cells

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Back-junction back-contact $n$ -type silicon solar cells with screen-printed aluminum-alloyed emitter

Robert Bock; Susanne Mau; Jan Schmidt; Rolf Brendel

Appl. Phys. Lett. 96, 263507 (2010) https://doi.org/10.1063/1.3456536

Abstract

View articletitled, Back-junction back-contact <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math>-type silicon solar cells with screen-printed aluminum-alloyed emitter

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Nonequilibrium carrier distribution in semiconductor photodetectors: Surface leakage channel under illumination

Hao Yin; Tian-xin Li; Wei-da Hu; Wen-juan Wang; Ning Li; Xiao-shuang Chen; Wei Lu

Appl. Phys. Lett. 96, 263508 (2010) https://doi.org/10.1063/1.3457872

Abstract

View articletitled, Nonequilibrium carrier distribution in semiconductor photodetectors: Surface leakage channel under illumination

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Three-dimensionally stacked flexible integrated circuit: Amorphous oxide/polymer hybrid complementary inverter using $n$ -type a-In–Ga–Zn–O and $p$ -type poly-(9,9-dioctylfluorene-co-bithiophene) thin-film transistors

Kenji Nomura; Takashi Aoki; Kiyoshi Nakamura; Toshio Kamiya; Takashi Nakanishi; Takayuki Hasegawa; Mutsumi Kimura; Takeo Kawase; Masahiro Hirano; Hideo Hosono

Appl. Phys. Lett. 96, 263509 (2010) https://doi.org/10.1063/1.3458799

Abstract

View articletitled, Three-dimensionally stacked flexible integrated circuit: Amorphous oxide/polymer hybrid complementary inverter using <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math>-type a-In–Ga–Zn–O and <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-type poly-(9,9-dioctylfluorene-co-bithiophene) thin-film transistors

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Wigner crystallization due to electrons localized at deep traps in two-dimensional amorphous dielectric

S. S. Shaimeev; V. A. Gritsenko; Hei Wong

Appl. Phys. Lett. 96, 263510 (2010) https://doi.org/10.1063/1.3458832

Abstract

View articletitled, Wigner crystallization due to electrons localized at deep traps in two-dimensional amorphous dielectric

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High-speed phonon imaging using frequency-multiplexed kinetic inductance detectors

L. J. Swenson; A. Cruciani; A. Benoit; M. Roesch; C. S. Yung; A. Bideaud; A. Monfardini

Appl. Phys. Lett. 96, 263511 (2010) https://doi.org/10.1063/1.3459142

Abstract

View articletitled, High-speed phonon imaging using frequency-multiplexed kinetic inductance detectors

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Correlation between kink and cathodoluminescence spectra in AlGaN/GaN high electron mobility transistors

G. Meneghesso; F. Rossi; G. Salviati; M. J. Uren; E. Muñoz; E. Zanoni

Appl. Phys. Lett. 96, 263512 (2010) https://doi.org/10.1063/1.3459968

Abstract

View articletitled, Correlation between kink and cathodoluminescence spectra in AlGaN/GaN high electron mobility transistors

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Detection of mechanical resonance of a single-electron transistor by direct current

Yu. A. Pashkin; T. F. Li; J. P. Pekola; O. Astafiev; D. A. Knyazev; F. Hoehne; H. Im; Y. Nakamura; J. S. Tsai

Appl. Phys. Lett. 96, 263513 (2010) https://doi.org/10.1063/1.3455880

Abstract

View articletitled, Detection of mechanical resonance of a single-electron transistor by direct current

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Comparison on the electroluminescence of Si-rich ${SiN}_{x}$ and ${SiO}_{x}$ based light-emitting diodes

Gong-Ru Lin; Yi-Hao Pai; Cheng-Tao Lin; Chun-Chieh Chen

Appl. Phys. Lett. 96, 263514 (2010) https://doi.org/10.1063/1.3459144

Abstract

View articletitled, Comparison on the electroluminescence of Si-rich <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>SiN</mtext></mrow><mtext>x</mtext></msub></mrow></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>SiO</mtext></mrow><mtext>x</mtext></msub></mrow></math> based light-emitting diodes

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Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors

C. Ostermaier; G. Pozzovivo; B. Basnar; W. Schrenk; M. Schmid; L. Tóth; B. Pécz; J.-F. Carlin; M. Gonschorek; N. Grandjean; G. Strasser; D. Pogany; J. Kuzmik

Appl. Phys. Lett. 96, 263515 (2010) https://doi.org/10.1063/1.3458700

Abstract

View articletitled, Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors

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BIOPHYSICS AND BIO-INSPIRED SYSTEMS

Biosensor regeneration via substrate electric potential: A physical mechanism

Rui-Bin Jiang; U. Lei

Appl. Phys. Lett. 96, 263701 (2010) https://doi.org/10.1063/1.3457473

Abstract

View articletitled, Biosensor regeneration via substrate electric potential: A physical mechanism

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Electron transfer mechanism of cytochrome $c$ at graphene electrode

Subbiah Alwarappan; Rakesh K. Joshi; Manoj K. Ram; Ashok Kumar

Appl. Phys. Lett. 96, 263702 (2010) https://doi.org/10.1063/1.3458698

Abstract

View articletitled, Electron transfer mechanism of cytochrome <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">c</mi></math> at graphene electrode

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INTERDISCIPLINARY AND GENERAL PHYSICS

Droplet actuation on a liquid layer due to thermocapillary motion: Shape effect

Ehsan Yakhshi-Tafti; Hyoung J. Cho; Ranganathan Kumar

Appl. Phys. Lett. 96, 264101 (2010) https://doi.org/10.1063/1.3456391

Abstract

View articletitled, Droplet actuation on a liquid layer due to thermocapillary motion: Shape effect

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Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation

B. C. Johnson; G. C. Tettamanzi; A. D. C. Alves; S. Thompson; C. Yang; J. Verduijn; J. A. Mol; R. Wacquez; M. Vinet; M. Sanquer; S. Rogge; D. N. Jamieson

Appl. Phys. Lett. 96, 264102 (2010) https://doi.org/10.1063/1.3458783

Abstract

View articletitled, Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation

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COMMENTS

Comment on “Network analysis of human heartbeat dynamics” [Appl. Phys. Lett. 96, 073703 (2010)]

Zhao Dong; Xiang Li

Appl. Phys. Lett. 96, 266101 (2010) https://doi.org/10.1063/1.3458811

Extract

View articletitled, Comment on “Network analysis of human heartbeat dynamics” [Appl. Phys. Lett. 96, 073703 (2010)]

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ERRATA

Erratum: “Measurement of the hot electron attenuation length of copper” [Appl. Phys. Lett. 96, 062105 (2010)]

J. J. Garramone; J. R. Abel; I. L. Sitnitsky; L. Zhao; I. Appelbaum; V. P. LaBella

Appl. Phys. Lett. 96, 269901 (2010) https://doi.org/10.1063/1.3458697

Extract

View articletitled, Erratum: “Measurement of the hot electron attenuation length of copper” [Appl. Phys. Lett. 96, 062105 (2010)]

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Retraction: “Nonvolatile memory with $Co - {SiO}_{2}$ core-shell nanocrystals as charge storage nodes in floating gate” [Appl. Phys. Lett. 95, 203112 (2009)]

Hai Liu; Domingo A. Ferrer; Fahmida Ferdousi; Sanjay K. Banerjee

Appl. Phys. Lett. 96, 269902 (2010) https://doi.org/10.1063/1.3456728

Extract

View articletitled, Retraction: “Nonvolatile memory with <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mtext>Co</mtext><mo>–</mo><msub><mrow><mtext>SiO</mtext></mrow><mn>2</mn></msub></mrow></math> core-shell nanocrystals as charge storage nodes in floating gate” [Appl. Phys. Lett. 95, 203112 (2009)]

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

ORGANIC ELECTRONICS AND PHOTONICS

DEVICE PHYSICS

BIOPHYSICS AND BIO-INSPIRED SYSTEMS

INTERDISCIPLINARY AND GENERAL PHYSICS

COMMENTS

ERRATA

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