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LASERS, OPTICS, AND OPTOELECTRONICS

Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes

Shih-Chun Ling; Tien-Chang Lu; Shih-Pang Chang; Jun-Rong Chen; Hao-Chung Kuo; Shing-Chung Wang

Appl. Phys. Lett. 96, 231101 (2010) https://doi.org/10.1063/1.3449557

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An alignment-free fiber-coupled microsphere resonator for gas sensing applications

Markus Gregor; Christoph Pyrlik; Rico Henze; Andreas Wicht; Achim Peters; Oliver Benson

Appl. Phys. Lett. 96, 231102 (2010) https://doi.org/10.1063/1.3430058

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High-performance quantum ring detector for the 1–3 terahertz range

S. Bhowmick; G. Huang; W. Guo; C. S. Lee; P. Bhattacharya; G. Ariyawansa; A. G. U. Perera

Appl. Phys. Lett. 96, 231103 (2010) https://doi.org/10.1063/1.3447364

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Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate

Hiroto Sekiguchi; Katsumi Kishino; Akihiko Kikuchi

Appl. Phys. Lett. 96, 231104 (2010) https://doi.org/10.1063/1.3443734

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Optical gain in carbon nanotubes

Etienne Gaufrès; Nicolas Izard; Xavier Le Roux; Delphine Marris-Morini; Saïd Kazaoui; Eric Cassan; Laurent Vivien

Appl. Phys. Lett. 96, 231105 (2010) https://doi.org/10.1063/1.3443634

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Extraction of the $β$ -factor for single quantum dots coupled to a photonic crystal waveguide

Henri Thyrrestrup; Luca Sapienza; Peter Lodahl

Appl. Phys. Lett. 96, 231106 (2010) https://doi.org/10.1063/1.3446873

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Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers

N. Gautam; H. S. Kim; M. N. Kutty; E. Plis; L. R. Dawson; S. Krishna

Appl. Phys. Lett. 96, 231107 (2010) https://doi.org/10.1063/1.3446967

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Enhancing optical switching with coherent control

Sunil Sandhu; Michelle L. Povinelli; Shanhui Fan

Appl. Phys. Lett. 96, 231108 (2010) https://doi.org/10.1063/1.3449572

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Increasing the hydrophobic property of poly (vinylidene fluoride) by KrF excimer laser irradiation

Ying Liu; Qi Wei; Yijian Jiang; Zuoren Nie

Appl. Phys. Lett. 96, 231109 (2010) https://doi.org/10.1063/1.3452343

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Increased photocurrent in quantum dot infrared photodetector by subwavelength hole array in metal thin film

S. Hellström; Z.-H. Chen; Y. Fu; M. Qiu; R. Soltanmoradi; Q. Wang; J. Y. Andersson

Appl. Phys. Lett. 96, 231110 (2010) https://doi.org/10.1063/1.3449117

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Surface-field cavity based on a two-dimensional cylindrical lattice

I. V. Konoplev; L. Fisher; K. Ronald; A. W. Cross; A. D. R. Phelps; C. W. Robertson; M. Thumm

Appl. Phys. Lett. 96, 231111 (2010) https://doi.org/10.1063/1.3428776

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Fresnel reflectance in refractive index estimation of light scattering solid particles in immersion liquid

J. Räty; I. Niskanen; K.-E. Peiponen

Appl. Phys. Lett. 96, 231112 (2010) https://doi.org/10.1063/1.3449127

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Low-threshold-current-density AlGaN-cladding-free $m$ -plane InGaN/GaN laser diodes

R. M. Farrell; P. S. Hsu; D. A. Haeger; K. Fujito; S. P. DenBaars; J. S. Speck; S. Nakamura

Appl. Phys. Lett. 96, 231113 (2010) https://doi.org/10.1063/1.3443719

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Upconversion of a relativistic Coulomb field terahertz pulse to the near infrared

S. P. Jamison; G. Berden; P. J. Phillips; W. A. Gillespie; A. M. MacLeod

Appl. Phys. Lett. 96, 231114 (2010) https://doi.org/10.1063/1.3449132

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Influence of index contrast in two dimensional photonic crystal lasers

Mette Marie Jørgensen; Sidsel Rübner Petersen; Mads Brøkner Christiansen; Thomas Buß; Cameron L. C. Smith; Anders Kristensen

Appl. Phys. Lett. 96, 231115 (2010) https://doi.org/10.1063/1.3443718

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II–VI semiconductor color converters for efficient green, yellow, and red light emitting diodes

M. A. Haase; J. Xie; T. A. Ballen; J. Zhang; B. Hao; Z. H. Yang; T. J. Miller; X. Sun; T. L. Smith; C. A. Leatherdale

Appl. Phys. Lett. 96, 231116 (2010) https://doi.org/10.1063/1.3453447

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PLASMAS AND ELECTRICAL DISCHARGES

The functionalization of graphene using electron-beam generated plasmas

M. Baraket; S. G. Walton; E. H. Lock; J. T. Robinson; F. K. Perkins

Appl. Phys. Lett. 96, 231501 (2010) https://doi.org/10.1063/1.3436556

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Prediction of atmospheric pressure glow discharge in dielectric-barrier system

Xiaoxi Duan; Feng He; Jiting Ouyang

Appl. Phys. Lett. 96, 231502 (2010) https://doi.org/10.1063/1.3453451

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Desktop megawatt superradiant free-electron laser at terahertz frequencies

Yen-Chieh Huang (黃衍介)

Appl. Phys. Lett. 96, 231503 (2010) https://doi.org/10.1063/1.3447928

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Nanoscale structural variation observed on the vicinal ${SrTiO}_{3} (001)$ surface

Susumu Shiraki; Masashi Nantoh; Satoshi Katano; Maki Kawai

Appl. Phys. Lett. 96, 231901 (2010) https://doi.org/10.1063/1.3447796

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Enhanced photoluminescence from self-organized rubrene single crystal surface structures

R. J. Stöhr; G. J. Beirne; P. Michler; R. Scholz; J. Wrachtrup; J. Pflaum

Appl. Phys. Lett. 96, 231902 (2010) https://doi.org/10.1063/1.3449124

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Enhancing magnetorheology with nonmagnetizable particles

John C. Ulicny; Keith S. Snavely; Mark A. Golden; Daniel J. Klingenberg

Appl. Phys. Lett. 96, 231903 (2010) https://doi.org/10.1063/1.3431608

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First principles prediction of the metastability of the ${Ge}_{2} Mn$ phase and its synthesis pathways

E. Arras; I. Slipukhina; M. Torrent; D. Caliste; T. Deutsch; P. Pochet

Appl. Phys. Lett. 96, 231904 (2010) https://doi.org/10.1063/1.3446837

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Planar semipolar $(10 \bar{1} 1)$ GaN on $(11 \bar{2} 3)$ sapphire

Stephan Schwaiger; Ilona Argut; Thomas Wunderer; Rudolf Rösch; Frank Lipski; Johannes Biskupek; Ute Kaiser; Ferdinand Scholz

Appl. Phys. Lett. 96, 231905 (2010) https://doi.org/10.1063/1.3442484

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Reduction of the transverse effective charge of optical phonons in ZnO under pressure

J. S. Reparaz; L. R. Muniz; M. R. Wagner; A. R. Goñi; M. I. Alonso; A. Hoffmann; B. K. Meyer

Appl. Phys. Lett. 96, 231906 (2010) https://doi.org/10.1063/1.3447798

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Origin of pyramidal hillocks on GaN thin films grown on free-standing $m$ -plane GaN substrates

R. M. Farrell; D. A. Haeger; X. Chen; C. S. Gallinat; R. W. Davis; M. Cornish; K. Fujito; S. Keller; S. P. DenBaars; S. Nakamura; J. S. Speck

Appl. Phys. Lett. 96, 231907 (2010) https://doi.org/10.1063/1.3447926

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Microstructure of gallium nitride films grown on silicon (110)

F. Ruiz-Zepeda; O. Contreras; A. Dadgar; A. Krost

Appl. Phys. Lett. 96, 231908 (2010) https://doi.org/10.1063/1.3449126

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The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization

R. Duffy; M. Shayesteh; M. White; J. Kearney; A.-M. Kelleher

Appl. Phys. Lett. 96, 231909 (2010) https://doi.org/10.1063/1.3452345

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Diffusion and growth mechanism of ${Nb}_{3} Sn$ superconductor grown by bronze technique

T. Laurila; V. Vuorinen; A. K. Kumar; A. Paul

Appl. Phys. Lett. 96, 231910 (2010) https://doi.org/10.1063/1.3453502

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Electromigration-driven surface morphological stabilization of a coherently strained epitaxial thin film on a substrate

Georgios I. Sfyris; M. Rauf Gungor; Dimitrios Maroudas

Appl. Phys. Lett. 96, 231911 (2010) https://doi.org/10.1063/1.3447371

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Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on $m$ -plane GaN

Feng Wu; You-Da Lin; Arpan Chakraborty; Hiroaki Ohta; Steven P. DenBaars; Shuji Nakamura; James S. Speck

Appl. Phys. Lett. 96, 231912 (2010) https://doi.org/10.1063/1.3447940

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Band gap of sphalerite and chalcopyrite phases of epitaxial ${ZnSnP}_{2}$

P. St-Jean; G. A. Seryogin; S. Francoeur

Appl. Phys. Lett. 96, 231913 (2010) https://doi.org/10.1063/1.3442917

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Striated surface morphology and crystal orientation of m-plane GaN films grown on $γ {-LiAlO}_{2} (100)$

K. R. Wang; M. Ramsteiner; C. Mauder; Q. Wan; T. Hentschel; H. T. Grahn; H. Kalisch; M. Heuken; R. H. Jansen; A. Trampert

Appl. Phys. Lett. 96, 231914 (2010) https://doi.org/10.1063/1.3449133

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${TiO}_{2}$ -coated carbon nanotubes: A redshift enhanced photocatalysis at visible light

Sheng-Yi Lu; Chiung-Wen Tang; Yu-Hsien Lin; Hsin-Fu Kuo; Yao-Cheng Lai; Meng-Yen Tsai; Hao Ouyang; Wen-Kuang Hsu

Appl. Phys. Lett. 96, 231915 (2010) https://doi.org/10.1063/1.3454908

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Band engineering of bilayer graphene by metal atoms: First-principles calculations

D.-H. Oh; B. G. Shin; J. R. Ahn

Appl. Phys. Lett. 96, 231916 (2010) https://doi.org/10.1063/1.3451465

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Absolute spectral gaps for infrared light and hypersound in three-dimensional metallodielectric phoxonic crystals

N. Papanikolaou; I. E. Psarobas; N. Stefanou

Appl. Phys. Lett. 96, 231917 (2010) https://doi.org/10.1063/1.3453448

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Semipolar GaN films on patterned $r$ -plane sapphire obtained by wet chemical etching

P. de Mierry; N. Kriouche; M. Nemoz; S. Chenot; G. Nataf

Appl. Phys. Lett. 96, 231918 (2010) https://doi.org/10.1063/1.3454278

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Correlation of band edge native defect state evolution to bulk mobility changes in ZnO thin films

Hyungtak Seo; Chan-Jun Park; Young-Je Cho; Young-Bae Kim; Duck-Kyun Choi

Appl. Phys. Lett. 96, 232101 (2010) https://doi.org/10.1063/1.3424790

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Small gap semiconducting organic charge-transfer interfaces

M. Nakano; H. Alves; A. S. Molinari; S. Ono; N. Minder; A. F. Morpurgo

Appl. Phys. Lett. 96, 232102 (2010) https://doi.org/10.1063/1.3449558

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Retardation of electromigration-induced Ni(P) consumption by an electroless Pd insertion layer

C. T. Lu; H. W. Tseng; C. H. Chang; T. S. Huang; C. Y. Liu

Appl. Phys. Lett. 96, 232103 (2010) https://doi.org/10.1063/1.3449119

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Suppression of thermal broadening via Zener tunneling in narrow-gap semiconductor double-quantum-wire structures

Ioanna Kyriakou; John H. Jefferson; Colin J. Lambert

Appl. Phys. Lett. 96, 232104 (2010) https://doi.org/10.1063/1.3436725

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Evolution of phase separation in In-rich InGaN alloys

B. N. Pantha; J. Li; J. Y. Lin; H. X. Jiang

Appl. Phys. Lett. 96, 232105 (2010) https://doi.org/10.1063/1.3453563

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Effect of humidity on hydrogen sensitivity of Pt-gated AlGaN/GaN high electron mobility transistor based sensors

C. F. Lo; C. Y. Chang; B. H. Chu; S. J. Pearton; A. Dabiran; P. P. Chow; F. Ren

Appl. Phys. Lett. 96, 232106 (2010) https://doi.org/10.1063/1.3454279

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MAGNETISM AND SUPERCONDUCTIVITY

Asymmetrical giant magnetoimpedance in exchange-biased NiFe

C. García; J. M. Florez; P. Vargas; C. A. Ross

Appl. Phys. Lett. 96, 232501 (2010) https://doi.org/10.1063/1.3446894

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Negative magnetoresistance in a $V^{3 +} / V^{4 +}$ mixed valent vanadate

A. Maignan; O. I. Lebedev; G. Van Tendeloo; C. Martin; S. Hébert

Appl. Phys. Lett. 96, 232502 (2010) https://doi.org/10.1063/1.3446892

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La-doped EuO: A rare earth ferromagnetic semiconductor with the highest Curie temperature

H. Miyazaki; H. J. Im; K. Terashima; S. Yagi; M. Kato; K. Soda; T. Ito; S. Kimura

Appl. Phys. Lett. 96, 232503 (2010) https://doi.org/10.1063/1.3416911

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Oxygen vacancy controlled tunable magnetic and electrical transport properties of (Li, Ni)-codoped ZnO thin films

E. Senthil kumar; S. Venkatesh; M. S. Ramachandra Rao

Appl. Phys. Lett. 96, 232504 (2010) https://doi.org/10.1063/1.3449122

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Room temperature ferromagnetism in pristine MgO thin films

C. Moyses Araujo; Mukes Kapilashrami; Xu Jun; O. D. Jayakumar; Sandeep Nagar; Yan Wu; Cecilia Århammar; Börje Johansson; Lyubov Belova; Rajeev Ahuja; Gillian A. Gehring; K. V. Rao

Appl. Phys. Lett. 96, 232505 (2010) https://doi.org/10.1063/1.3447376

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Impedance spectroscopy of micron sized magnetic tunnel junctions with MgO tunnel barrier

Snorri Ingvarsson; Mustafa Arikan; Matthew Carter; Weifeng Shen; Gang Xiao

Appl. Phys. Lett. 96, 232506 (2010) https://doi.org/10.1063/1.3449573

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Electron spin resonance probed suppressing of the cycloidal spin structure in doped bismuth ferrites

J. W. Lin; Y. H. Tang; C. S. Lue; J. G. Lin

Appl. Phys. Lett. 96, 232507 (2010) https://doi.org/10.1063/1.3451463

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Correlation between local structure distortions and martensitic transformation in Ni–Mn–In alloys

D. N. Lobo; K. R. Priolkar; P. A. Bhobe; D. Krishnamurthy; S. Emura

Appl. Phys. Lett. 96, 232508 (2010) https://doi.org/10.1063/1.3454277

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DIELECTRICS AND FERROELECTRICITY

Phase field model of dielectric and magnetic composites

Yu U. Wang

Appl. Phys. Lett. 96, 232901 (2010) https://doi.org/10.1063/1.3446842

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A modified Landau–Devonshire thermodynamic potential for strontium titanate

G. Sheng; Y. L. Li; J. X. Zhang; S. Choudhury; Q. X. Jia; V. Gopalan; D. G. Schlom; Z. K. Liu; L. Q. Chen

Appl. Phys. Lett. 96, 232902 (2010) https://doi.org/10.1063/1.3442915

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Impact of interface controlling layer of ${Al}_{2} O_{3}$ for improving the retention behaviors of In–Ga–Zn oxide-based ferroelectric memory transistor

Sung-Min Yoon; Shin-Hyuk Yang; Soon-Won Jung; Chun-Won Byun; Sang-Hee Ko Park; Chi-Sun Hwang; Gwang-Geun Lee; Eisuke Tokumitsu; Hiroshi Ishiwara

Appl. Phys. Lett. 96, 232903 (2010) https://doi.org/10.1063/1.3452339

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Phase diagram of ferroelectric nanowires and its mechanical force controllability

S. P. Lin; Yue Zheng; M. Q. Cai; Biao Wang

Appl. Phys. Lett. 96, 232904 (2010) https://doi.org/10.1063/1.3446854

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Large three-photon absorption in ${Ba}_{0.5} {Sr}_{0.5} {TiO}_{3}$ films studied using Z-scan technique

K. Venkata Saravanan; K. C. James Raju; M. Ghanashyam Krishna; Surya P. Tewari; S. Venugopal Rao

Appl. Phys. Lett. 96, 232905 (2010) https://doi.org/10.1063/1.3447930

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Density functional theory plus U study of vacancy formations in bismuth ferrite

Zhen Zhang; Ping Wu; Lang Chen; Junling Wang

Appl. Phys. Lett. 96, 232906 (2010) https://doi.org/10.1063/1.3447369

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NANOSCALE SCIENCE AND DESIGN

Contactless measurements of charge migration within single molecules

Kiyonobu Nagaya; Hiroshi Iwayama; Akinori Sugishima; Yoshinori Ohmasa; Makoto Yao

Appl. Phys. Lett. 96, 233101 (2010) https://doi.org/10.1063/1.3442483

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Tunable optical features from self-organized rhodium nanostructures

Bhaskar R. Sathe; Beena K. Balan; Vijayamohanan K. Pillai

Appl. Phys. Lett. 96, 233102 (2010) https://doi.org/10.1063/1.3447927

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Ni endohedral-doped $C_{60}$ with duality of magnetic moments

J. L. Li; G. W. Yang

Appl. Phys. Lett. 96, 233103 (2010) https://doi.org/10.1063/1.3447934

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Near-field light detection by conservative and dissipative force modulation methods using a piezoelectric cantilever

Nobuo Satoh; Takeshi Fukuma; Kei Kobayashi; Shunji Watanabe; Toru Fujii; Kazumi Matsushige; Hirofumi Yamada

Appl. Phys. Lett. 96, 233104 (2010) https://doi.org/10.1063/1.3449131

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UV-Raman imaging of the in-plane strain in single ultrathin strained silicon-on-insulator patterned structure

O. Moutanabbir; M. Reiche; A. Hähnel; W. Erfurth; M. Motohashi; A. Tarun; N. Hayazawa; S. Kawata

Appl. Phys. Lett. 96, 233105 (2010) https://doi.org/10.1063/1.3449135

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Thermal conductivities of ${Si}_{1 - x} {Ge}_{x}$ nanowires with different germanium concentrations and diameters

Hyoungjoon Kim; Ilsoo Kim; Heon-jin Choi; Woochul Kim

Appl. Phys. Lett. 96, 233106 (2010) https://doi.org/10.1063/1.3443707

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Enhancing the performance of quantum dots sensitized solar cell by ${SiO}_{2}$ surface coating

Zhifu Liu; Masahiro Miyauchi; Yu Uemura; Yan Cui; Kohjiro Hara; Zhigang Zhao; Kenji Sunahara; Akihiro Furube

Appl. Phys. Lett. 96, 233107 (2010) https://doi.org/10.1063/1.3447356

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Electrically reconfigurable nanophotonic hybrid grating lens array

Ranjith Rajasekharan; Christoph Bay; Qing Dai; Jon Freeman; Timothy D. Wilkinson

Appl. Phys. Lett. 96, 233108 (2010) https://doi.org/10.1063/1.3449130

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Alternating current-to-direct current power conversion by single-wall carbon nanotube diodes

Govind Mallick; Mark H. Griep; Pulickel M. Ajayan; Shashi P. Karna

Appl. Phys. Lett. 96, 233109 (2010) https://doi.org/10.1063/1.3429587

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Strain-mediated metal-insulator transition in epitaxial ultrathin films of ${NdNiO}_{3}$

Jian Liu; M. Kareev; B. Gray; J. W. Kim; P. Ryan; B. Dabrowski; J. W. Freeland; J. Chakhalian

Appl. Phys. Lett. 96, 233110 (2010) https://doi.org/10.1063/1.3451462

Abstract

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Work functions of capped (5, 5) and (9, 0) single-walled carbon nanotubes adsorbed with alkali-metal atoms

Shun-Fu Xu; Guang Yuan; Chun Li; Zhi-Jun Jia; Hitenori Mimura

Appl. Phys. Lett. 96, 233111 (2010) https://doi.org/10.1063/1.3449116

Abstract

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Surround-gated vertical nanowire quantum dots

M. H. M. van Weert; M. den Heijer; M. P. van Kouwen; R. E. Algra; E. P. A. M. Bakkers; L. P. Kouwenhoven; V. Zwiller

Appl. Phys. Lett. 96, 233112 (2010) https://doi.org/10.1063/1.3452346

Abstract

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Room temperature infrared photoresponse of self assembled Ge/Si (001) quantum dots grown by molecular beam epitaxy

R. K. Singha; S. Manna; S. Das; A. Dhar; S. K. Ray

Appl. Phys. Lett. 96, 233113 (2010) https://doi.org/10.1063/1.3446848

Abstract

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Effect of an interface charge density wave on surface plasmon resonance in ZnO/Ag/ZnO thin films

Dongyan Zhang (张东岩); Pangpang Wang (王胖胖); Ri-ichi Murakami (村上理一); Xiaoping Song (宋晓平)

Appl. Phys. Lett. 96, 233114 (2010) https://doi.org/10.1063/1.3442916

Abstract

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Controlled electronic transport in single-walled carbon nanotube networks: Selecting electron hopping and chemical doping mechanisms

Z. J. Han; K. Ostrikov

Appl. Phys. Lett. 96, 233115 (2010) https://doi.org/10.1063/1.3449118

Abstract

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ORGANIC ELECTRONICS AND PHOTONICS

Memory mechanisms of vertical organic memory transistors

Li-Zhen Yu; Hung-Chun Chen; Ching-Ting Lee

Appl. Phys. Lett. 96, 233301 (2010) https://doi.org/10.1063/1.3449120

Abstract

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Control of the charge transport properties in a solution-processible ambipolar quinoidal oligothiophene derivative by direct laser writing

J. C. Ribierre; T. Fujihara; T. Muto; T. Aoyama

Appl. Phys. Lett. 96, 233302 (2010) https://doi.org/10.1063/1.3449121

Abstract

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DEVICE PHYSICS

Modeling of flexoelectric effect on capacitor-voltage and memory window of metal-ferroelectric-insulator-silicon capacitor

Y. Q. Chen; X. J. Zheng; W. Li

Appl. Phys. Lett. 96, 233501 (2010) https://doi.org/10.1063/1.3446890

Abstract

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Frequency dependent rotation and translation of nanowires in liquid environment

Marcin Marczak; Djamila Hourlier; Thierry Mélin; Leszek Adamowicz; Heinrich Diesinger

Appl. Phys. Lett. 96, 233502 (2010) https://doi.org/10.1063/1.3430738

Abstract

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An infrared invisibility cloak composed of glass

Elena Semouchkina; Douglas H. Werner; George B. Semouchkin; Carlo Pantano

Appl. Phys. Lett. 96, 233503 (2010) https://doi.org/10.1063/1.3447794

Abstract

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Electrode oxygen-affinity influence on voltage nonlinearities in high-k metal-insulator-metal capacitors

C. Vallée; P. Gonon; C. Jorel; F. El Kamel

Appl. Phys. Lett. 96, 233504 (2010) https://doi.org/10.1063/1.3447795

Abstract

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Collimation of horizontally polarized shear waves by means of ridge grating supported Love modes

J. Christensen; L. Martín-Moreno; F. J. García-Vidal

Appl. Phys. Lett. 96, 233505 (2010) https://doi.org/10.1063/1.3447929

Abstract

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Metal-oxide-semiconductor tunneling photodiodes with enhanced deep depletion at edge by high- $k$ material

Jen-Yuan Cheng; Hui-Ting Lu; Jenn-Gwo Hwu

Appl. Phys. Lett. 96, 233506 (2010) https://doi.org/10.1063/1.3449128

Abstract

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Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors

Erik Lind; Yann-Michel Niquet; Hector Mera; Lars-Erik Wernersson

Appl. Phys. Lett. 96, 233507 (2010) https://doi.org/10.1063/1.3449559

Abstract

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Impact of secondary gas-phase reactions on microcrystalline silicon solar cells deposited at high rate

G. Parascandolo; R. Bartlome; G. Bugnon; T. Söderström; B. Strahm; A. Feltrin; C. Ballif

Appl. Phys. Lett. 96, 233508 (2010) https://doi.org/10.1063/1.3449571

Abstract

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Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors

Prashanth Makaram; Jungwoo Joh; Jesús A. del Alamo; Tomás Palacios; Carl V. Thompson

Appl. Phys. Lett. 96, 233509 (2010) https://doi.org/10.1063/1.3446869

Abstract

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Effects of the fluorine plasma treatment on the surface potential and Schottky barrier height of ${Al}_{x} {Ga}_{1 - x} N / GaN$ heterostructures

Sen Huang; Hongwei Chen; Kevin J. Chen

Appl. Phys. Lett. 96, 233510 (2010) https://doi.org/10.1063/1.3446895

Abstract

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Frequency-dependence of the acoustic rectifying efficiency of an acoustic diode model

Bin Liang; Xin-ye Zou; Bo Yuan; Jian-chun Cheng

Appl. Phys. Lett. 96, 233511 (2010) https://doi.org/10.1063/1.3447361

Abstract

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ZnO nanoparticle surface acoustic wave UV sensor

Venkata Chivukula; Daumantas Ciplys; Michael Shur; Partha Dutta

Appl. Phys. Lett. 96, 233512 (2010) https://doi.org/10.1063/1.3447932

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BIOPHYSICS AND BIO-INSPIRED SYSTEMS

On the feasibility of neurocurrent imaging by low-field nuclear magnetic resonance

Martin Burghoff; Hans-Helge Albrecht; Stefan Hartwig; Ingo Hilschenz; Rainer Körber; Nora Höfner; Hans-Jürgen Scheer; Jens Voigt; Lutz Trahms; Gabriel Curio

Appl. Phys. Lett. 96, 233701 (2010) https://doi.org/10.1063/1.3441410

Abstract

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INTERDISCIPLINARY AND GENERAL PHYSICS

The impact of nonlinearity on degenerate parametric amplifiers

Jeffrey F. Rhoads; Steven W. Shaw

Appl. Phys. Lett. 96, 234101 (2010) https://doi.org/10.1063/1.3446851

Abstract

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Generation of gigawatt level beat waves

Guolin Li; Ting Shu; Jun Zhang; Jianhua Yang; Chengwei Yuan

Appl. Phys. Lett. 96, 234102 (2010) https://doi.org/10.1063/1.3449134

Abstract

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Directed rebounding of droplets by microscale surface roughness gradients

Bernard A. Malouin, Jr.; Nikhil A. Koratkar; Amir H. Hirsa; Zuankai Wang

Appl. Phys. Lett. 96, 234103 (2010) https://doi.org/10.1063/1.3442500

Abstract

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Supplementary Material

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ERRATA

Erratum: “The effect of trapping superparamagnetic beads on domain wall motion” [Appl. Phys. Lett. 96, 192503 (2010)]

Matthew T. Bryan; Julian Dean; Thomas Schrefl; Faye E. Thompson; John W. Haycock; Dan A. Allwood

Appl. Phys. Lett. 96, 239901 (2010) https://doi.org/10.1063/1.3449138

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Erratum: “Thin-film transistors based on p-type ${Cu}_{2} O$ thin films produced at room temperature” [Appl. Phys. Lett. 96, 192102 (2010)]

Elvira Fortunato; Vitor Figueiredo; Pedro Barquinha; Elangovan Elamurugu; Raquel Barros; Gonçalo Gonçalves; Sang-Hee Ko Park; Chi-Sun Hwang; Rodrigo Martins

Appl. Phys. Lett. 96, 239902 (2010) https://doi.org/10.1063/1.3449139

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Erratum: “Electronic structure of Cs-doped tris(8-hydroxyquinoline) aluminum” [Appl. Phys. Lett. 86, 213508 (2005)]

Huanjun Ding; Yongli Gao

Appl. Phys. Lett. 96, 239903 (2010) https://doi.org/10.1063/1.3449137

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Erratum: “Spin-dependent photoconductivity in nonmagnetic semiconductors at room temperature” [Appl. Phys. Lett. 95, 241104 (2009)]

F. Zhao; A. Balocchi; A. Kunold; J. Carrey; H. Carrère; T. Amand; N. Ben Abdallah; J. C. Harmand; X. Marie

Appl. Phys. Lett. 96, 239904 (2010) https://doi.org/10.1063/1.3449140

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

ORGANIC ELECTRONICS AND PHOTONICS

DEVICE PHYSICS

BIOPHYSICS AND BIO-INSPIRED SYSTEMS

INTERDISCIPLINARY AND GENERAL PHYSICS

ERRATA

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