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Issues

Volume 96, Issue 21
24 May 2010
Applied Physics Letters Cover Image for Volume 96, Issue 21
All Issues
ISSN 0003-6951
EISSN 1077-3118

LASERS, OPTICS, AND OPTOELECTRONICS

Operating quantum waveguide circuits with superconducting single-photon detectors
C. M. Natarajan; A. Peruzzo; S. Miki; M. Sasaki; Z. Wang; B. Baek; S. Nam; R. H. Hadfield; J. L. O’Brien
Appl. Phys. Lett. 96, 211101 (2010) https://doi.org/10.1063/1.3413948
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Photoacoustic measurement of liquid viscosity
Cunguang Lou; Da Xing
Appl. Phys. Lett. 96, 211102 (2010) https://doi.org/10.1063/1.3435462
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An all optically driven integrated deformable mirror device
V. Mathur; S. R. Vangala; X. Qian; W. D. Goodhue; B. Haji-Saeed; J. Khoury
Appl. Phys. Lett. 96, 211103 (2010) https://doi.org/10.1063/1.3430568
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Dependence of emission of terahertz radiation on geometrical parameters of dipole photoconductive antennas
Fumiaki Miyamaru; Yu Saito; Kohji Yamamoto; Takashi Furuya; Seizi Nishizawa; Masahiko Tani
Appl. Phys. Lett. 96, 211104 (2010) https://doi.org/10.1063/1.3436724
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Sub-100 attoseconds stability optics-to-microwave synchronization
W. Zhang; Z. Xu; M. Lours; R. Boudot; Y. Kersalé; G. Santarelli; Y. Le Coq
Appl. Phys. Lett. 96, 211105 (2010) https://doi.org/10.1063/1.3431299
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Broadband quantum cascade laser gain medium based on a “continuum-to-bound” active region design
Yu Yao; William O. Charles; Tracy Tsai; Jianxin Chen; Gerard Wysocki; Claire F. Gmachl
Appl. Phys. Lett. 96, 211106 (2010) https://doi.org/10.1063/1.3431577
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Electrically enhanced infrared photoluminescence in Cr:ZnSe
Julien Jaeck; Riad Haidar; Fabrice Pardo; Jean-Luc Pelouard; Emmanuel Rosencher
Appl. Phys. Lett. 96, 211107 (2010) https://doi.org/10.1063/1.3431663
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Strain-enhanced photoluminescence from Ge direct transition
T.-H. Cheng; K.-L. Peng; C.-Y. Ko; C.-Y. Chen; H.-S. Lan; Y.-R. Wu; C. W. Liu; H.-H. Tseng
Appl. Phys. Lett. 96, 211108 (2010) https://doi.org/10.1063/1.3429085
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Resonance behavior of single ultrathin slot antennas on finite dielectric substrates in terahertz regime
H. R. Park; S. M. Koo; O. K. Suwal; Y. M. Park; J. S. Kyoung; M. A. Seo; S. S. Choi; N. K. Park; D. S. Kim; K. J. Ahn
Appl. Phys. Lett. 96, 211109 (2010) https://doi.org/10.1063/1.3437091
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Pulse width narrowing due to dual ground state emission in quantum dot passively mode locked lasers
Charis Mesaritakis; Christos Simos; Hercules Simos; Spiros Mikroulis; Igor Krestnikov; Dimitris Syvridis
Appl. Phys. Lett. 96, 211110 (2010) https://doi.org/10.1063/1.3432076
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Particle-size effects on the terahertz transmittance of metallic particle ensembles: Comparison with effective medium theory
Y. Zheng; A. Johnson; E. Pyde; K. J. Chau
Appl. Phys. Lett. 96, 211111 (2010) https://doi.org/10.1063/1.3430547
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Storing light in active optical waveguides with single-negative materials
W. T. Lu (陆文韬); Y. J. Huang (黄永坚); B. D. F. Casse; R. K. Banyal; S. Sridhar
Appl. Phys. Lett. 96, 211112 (2010) https://doi.org/10.1063/1.3431574
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Terahertz emission from a dc-biased two-color femtosecond laser-induced filament in air
Tie-Jun Wang; Claude Marceau; Yanping Chen; Shuai Yuan; Francis Théberge; Marc Châteauneuf; Jacques Dubois; See Leang Chin
Appl. Phys. Lett. 96, 211113 (2010) https://doi.org/10.1063/1.3441004
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Terahertz chemical microscope for label-free detection of protein complex
Toshihiko Kiwa; Yousuke Kondo; Yuji Minami; Iwao Kawayama; Masayoshi Tonouchi; Keiji Tsukada
Appl. Phys. Lett. 96, 211114 (2010) https://doi.org/10.1063/1.3441408
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Electric field control of a quantum dot molecule through optical excitation
Mauricio Garrido; Kushal C. Wijesundara; Swati Ramanathan; E. A. Stinaff; A. S. Bracker; D. Gammon
Appl. Phys. Lett. 96, 211115 (2010) https://doi.org/10.1063/1.3430506
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Extraordinary transmission from high-gain nanoaperture antennas
Edward C. Kinzel; Pornsak Srisungsitthisunti; Yan Li; Arvind Raman; Xianfan Xu
Appl. Phys. Lett. 96, 211116 (2010) https://doi.org/10.1063/1.3436726
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Single photon emission from positioned GaAs/AlGaAs photonic nanowires
J. Heinrich; A. Huggenberger; T. Heindel; S. Reitzenstein; S. Höfling; L. Worschech; A. Forchel
Appl. Phys. Lett. 96, 211117 (2010) https://doi.org/10.1063/1.3440967
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Terahertz photoluminescence from GaAs doped with shallow donors at interband excitation
A. O. Zakhar’in; A. V. Andrianov; A. Yu. Egorov; N. N. Zinov’ev
Appl. Phys. Lett. 96, 211118 (2010) https://doi.org/10.1063/1.3441401
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Oscillator-free atomic clock using a multimode laser
Sin Hyuk Yim; D. Cho
Appl. Phys. Lett. 96, 211119 (2010) https://doi.org/10.1063/1.3435474
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Modulation of 1.5 μm dislocation-related luminescence emitted from a direct silicon bonded interface by external bias
Xuegong Yu; Lihui Song; Deren Yang; Martin Kittler; George A. Rozgonyi
Appl. Phys. Lett. 96, 211120 (2010) https://doi.org/10.1063/1.3431580
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Experimental observation of the trapped rainbow
Vera N. Smolyaninova; Igor I. Smolyaninov; Alexander V. Kildishev; Vladimir M. Shalaev
Appl. Phys. Lett. 96, 211121 (2010) https://doi.org/10.1063/1.3442501
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Radiative and nonradiative recombination in an ultraviolet GaN/AlGaN multiple-quantum-well laser diode
Harumasa Yoshida; Masakazu Kuwabara; Yoji Yamashita; Kazuya Uchiyama; Hirofumi Kan
Appl. Phys. Lett. 96, 211122 (2010) https://doi.org/10.1063/1.3442918
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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Silicon nanocrystals dispersed in water: Photosensitizers for molecular oxygen
B. Goller; S. Polisski; H. Wiggers; D. Kovalev
Appl. Phys. Lett. 96, 211901 (2010) https://doi.org/10.1063/1.3432349
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Hyperfine fields in nanocrystalline Fe–Zr–B probed by F57e nuclear magnetic resonance spectroscopy
Marcel Miglierini; Adriana Lančok; Jaroslav Kohout
Appl. Phys. Lett. 96, 211902 (2010) https://doi.org/10.1063/1.3431612
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Stress control in polycrystalline thin films—reduction in adatoms diffusion into grain boundaries via surfactants
Yi Yang; Hanchen Huang; S. K. Xiang; Eric Chason
Appl. Phys. Lett. 96, 211903 (2010) https://doi.org/10.1063/1.3435473
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Ultrafast dynamics of excitons in delafossite CuScO2 thin films
Fucai Liu; T. Makino; H. Hiraga; T. Fukumura; Yongfa Kong; M. Kawasaki
Appl. Phys. Lett. 96, 211904 (2010) https://doi.org/10.1063/1.3436548
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The role of Zn interstitials in cobalt-doped ZnO diluted magnetic semiconductors
Tongfei Shi; Zhenguo Xiao; Zhijun Yin; Xinhua Li; Yuqi Wang; Hongtao He; Jiannong Wang; Wenshen Yan; Shiqiang Wei
Appl. Phys. Lett. 96, 211905 (2010) https://doi.org/10.1063/1.3437082
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Polarization control of electroluminescence from vertically stacked InAs/GaAs quantum dots
Tomoya Inoue; Masaki Asada; Nami Yasuoka; Osamu Kojima; Takashi Kita; Osamu Wada
Appl. Phys. Lett. 96, 211906 (2010) https://doi.org/10.1063/1.3441403
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Dispersion measurements of a 1.3 μm quantum dot semiconductor optical amplifier over 120 nm of spectral bandwidth
M. Bagnell; J. Davila-Rodriguez; A. Ardey; P. J. Delfyett
Appl. Phys. Lett. 96, 211907 (2010) https://doi.org/10.1063/1.3430742
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Surface-passivation effects on the photoluminescence enhancement in ZnS:Mn nanoparticles by ultraviolet irradiation with oxygen bubbling
Dae-Ryong Jung; Jongmin Kim; Byungwoo Park
Appl. Phys. Lett. 96, 211908 (2010) https://doi.org/10.1063/1.3431267
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Near infrared optical materials from polymeric amorphous carbon synthesized by collisional plasma process
M. Rybachuk; A. Hertwig; M. Weise; M. Sahre; M. Männ; U. Beck; J. M. Bell
Appl. Phys. Lett. 96, 211909 (2010) https://doi.org/10.1063/1.3431292
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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Low-lying spectra of massless Dirac electron in magnetic dot and ring
C. M. Lee; Richard C. H. Lee; W. Y. Ruan; M. Y. Chou
Appl. Phys. Lett. 96, 212101 (2010) https://doi.org/10.1063/1.3435478
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Electrometry using the quantum Hall effect in a bilayer two-dimensional electron system
L. H. Ho; L. J. Taskinen; A. P. Micolich; A. R. Hamilton; P. Atkinson; D. A. Ritchie
Appl. Phys. Lett. 96, 212102 (2010) https://doi.org/10.1063/1.3428778
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Anisotropic conductivity of doped graphene due to short-range nonsymmetric scattering
F. T. Vasko
Appl. Phys. Lett. 96, 212103 (2010) https://doi.org/10.1063/1.3431667
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Metal-insulator transition in ZnO nanopowder during thermal cycling by impedance spectroscopy
M. Nadeem; Amina Farooq; T. J. Shin
Appl. Phys. Lett. 96, 212104 (2010) https://doi.org/10.1063/1.3431298
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AlGaN/GaN high electron mobility transistors based on InGaN/GaN multiquantum-well structures
K. H. Lee; P. C. Chang; S. J. Chang; Y. K. Su; C. L. Yu
Appl. Phys. Lett. 96, 212105 (2010) https://doi.org/10.1063/1.3421392
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Transverse-optical phonons excited in Si using a high-numerical-aperture lens
Daisuke Kosemura; Atsushi Ogura
Appl. Phys. Lett. 96, 212106 (2010) https://doi.org/10.1063/1.3441042
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Proposal for efficient generation of spin-polarized current in silicon
L. K. Castelano; L. J. Sham
Appl. Phys. Lett. 96, 212107 (2010) https://doi.org/10.1063/1.3441407
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Topological confinement in graphene bilayer quantum rings
L. J. P. Xavier; J. M. Pereira, Jr.; Andrey Chaves; G. A. Farias; F. M. Peeters
Appl. Phys. Lett. 96, 212108 (2010) https://doi.org/10.1063/1.3431618
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Addition of aluminum to solution processed conductive indium tin oxide thin film for an oxide thin film transistor
J. H. Jeon; Y. H. Hwang; B. S. Bae; H. L. Kwon; H. J. Kang
Appl. Phys. Lett. 96, 212109 (2010) https://doi.org/10.1063/1.3442482
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Pinning of recombination-enhanced dislocation motion in 4H–SiC: Role of Cu and EH1 complex
Bin Chen; Hirofumi Matsuhata; Takashi Sekiguchi; Takasumi Ohyanagi; Akimasa Kinoshita; Hajime Okumura
Appl. Phys. Lett. 96, 212110 (2010) https://doi.org/10.1063/1.3442907
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MAGNETISM AND SUPERCONDUCTIVITY

Bulk and interfacial scatterings in current-perpendicular-to-plane giant magnetoresistance with Co2Fe(Al0.5Si0.5) Heusler alloy layers and Ag spacer
T. M. Nakatani; T. Furubayashi; S. Kasai; H. Sukegawa; Y. K. Takahashi; S. Mitani; K. Hono
Appl. Phys. Lett. 96, 212501 (2010) https://doi.org/10.1063/1.3432070
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Defect-enhanced ferromagnetism in Gd- and Si-coimplanted GaN
R. P. Davies; B. P. Gila; C. R. Abernathy; S. J. Pearton; C. J. Stanton
Appl. Phys. Lett. 96, 212502 (2010) https://doi.org/10.1063/1.3437085
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Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40Fe40B20/Ta structures
M. Endo; S. Kanai; S. Ikeda; F. Matsukura; H. Ohno
Appl. Phys. Lett. 96, 212503 (2010) https://doi.org/10.1063/1.3429592
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Perpendicular spin-torque switching with a synthetic antiferromagnetic reference layer
Ioan Tudosa; J. A. Katine; S. Mangin; Eric E. Fullerton
Appl. Phys. Lett. 96, 212504 (2010) https://doi.org/10.1063/1.3441402
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Tunnel magnetoresistance with improved bias voltage dependence in lattice-matched Fe/spinel MgAl2O4/Fe(001) junctions
Hiroaki Sukegawa; Huixin Xiu; Tadakatsu Ohkubo; Takao Furubayashi; Tomohiko Niizeki; Wenhong Wang; Shinya Kasai; Seiji Mitani; Koichiro Inomata; Kazuhiro Hono
Appl. Phys. Lett. 96, 212505 (2010) https://doi.org/10.1063/1.3441409
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A differential dual spin valve with high pinning stability
G. C. Han; J. J. Qiu; C. C. Wang; V. Ko; Z. B. Guo
Appl. Phys. Lett. 96, 212506 (2010) https://doi.org/10.1063/1.3441412
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Nonuniformity of a planar polarizer for spin-transfer-induced vortex oscillations at zero field
A. V. Khvalkovskiy; J. Grollier; N. Locatelli; Ya. V. Gorbunov; K. A. Zvezdin; V. Cros
Appl. Phys. Lett. 96, 212507 (2010) https://doi.org/10.1063/1.3441405
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Synthesis, anisotropy, and superconducting properties of LiFeAs single crystal
Yoo Jang Song; Jin Soo Ghim; Byeong Hun Min; Yong Seung Kwon; Myung Hwa Jung; Jong-Soo Rhyee
Appl. Phys. Lett. 96, 212508 (2010) https://doi.org/10.1063/1.3435472
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DIELECTRICS AND FERROELECTRICITY

Structural and electrical properties of fully strained (In,Ga)As field effect transistors with in situ deposited gate stacks
C. Marchiori; E. Kiewra; J. Fompeyrine; C. Gerl; C. Rossel; M. Richter; J.-P. Locquet; T. Smets; M. Sousa; C. Andersson; D. J. Webb
Appl. Phys. Lett. 96, 212901 (2010) https://doi.org/10.1063/1.3430572
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Polarization reversal behavior in the Pt/Pb(Zr,Ti)O3/Pt and Pt/Al2O3/Pb(Zr,Ti)O3/Pt capacitors for different reversal directions
Hyun Ju Lee; Gun Hwan Kim; Min Hyuk Park; An-Quan Jiang; Cheol Seong Hwang
Appl. Phys. Lett. 96, 212902 (2010) https://doi.org/10.1063/1.3435484
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Capacitance-voltage characteristics of SrTiO3/LaVO3 epitaxial heterostructures
Woong Choi; Sang Yoon Lee; Timothy D. Sands
Appl. Phys. Lett. 96, 212903 (2010) https://doi.org/10.1063/1.3441400
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Tunable thin film bulk acoustic wave resonators with improved Q-factor
A. Vorobiev; S. Gevorgian
Appl. Phys. Lett. 96, 212904 (2010) https://doi.org/10.1063/1.3441413
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NANOSCALE SCIENCE AND DESIGN

Uniaxial strain modulated band gap of ZnO nanostructures
S. Li; Q. Jiang; G. W. Yang
Appl. Phys. Lett. 96, 213101 (2010) https://doi.org/10.1063/1.3435479
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Enhanced photoluminescence efficiency of mid-infrared InAsSb nanostructures using a carrier blocking layer
W. Lei; H. H. Tan; C. Jagadish
Appl. Phys. Lett. 96, 213102 (2010) https://doi.org/10.1063/1.3436562
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A symmetry-breaking electromechanical detector
I. Mahboob; C. Froitier; H. Yamaguchi
Appl. Phys. Lett. 96, 213103 (2010) https://doi.org/10.1063/1.3429589
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Surface transfer hole doping of epitaxial graphene using MoO3 thin film
Zhenyu Chen; Iman Santoso; Rui Wang; Lan Fei Xie; Hong Ying Mao; Han Huang; Yu Zhan Wang; Xing Yu Gao; Zhi Kuan Chen; Dongge Ma; Andrew Thye Shen Wee; Wei Chen
Appl. Phys. Lett. 96, 213104 (2010) https://doi.org/10.1063/1.3441263
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Flexible room-temperature NO2 gas sensors based on carbon nanotubes/reduced graphene hybrid films
Hu Young Jeong; Dae-Sik Lee; Hong Kyw Choi; Duck Hyun Lee; Ji-Eun Kim; Jeong Yong Lee; Won Jong Lee; Sang Ouk Kim; Sung-Yool Choi
Appl. Phys. Lett. 96, 213105 (2010) https://doi.org/10.1063/1.3432446
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Nanoscale imaging and control of resistance switching in VO2 at room temperature
Jeehoon Kim; Changhyun Ko; Alex Frenzel; Shriram Ramanathan; Jennifer E. Hoffman
Appl. Phys. Lett. 96, 213106 (2010) https://doi.org/10.1063/1.3435466
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High-performance organic charge trap flash memory devices based on ink-jet printed 6,13-bis(triisopropylsilylethynyl) pentacene transistors
Young-Su Park; Seungjun Chung; Soo-Jin Kim; Si-Hoon Lyu; Jae-Wan Jang; Soon-Ki Kwon; Yongtaek Hong; Jang-Sik Lee
Appl. Phys. Lett. 96, 213107 (2010) https://doi.org/10.1063/1.3435470
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Growth direction determination of a single RuO2 nanowire by polarized Raman spectroscopy
Myung Hwa Kim; Jeong Min Baik; Seung Joon Lee; Hae-Young Shin; Jaeyeon Lee; Seokhyun Yoon; Galen D. Stucky; Martin Moskovits; Alec M. Wodtke
Appl. Phys. Lett. 96, 213108 (2010) https://doi.org/10.1063/1.3435475
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Thermophysical property-related comparison criteria for nanofluid heat transfer enhancement in turbulent flow
W. Yu; D. M. France; E. V. Timofeeva; D. Singh; J. L. Routbort
Appl. Phys. Lett. 96, 213109 (2010) https://doi.org/10.1063/1.3435487
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Imaging dielectric relaxation in nanostructured polymers by frequency modulation electrostatic force microscopy
C. Riedel; R. Sweeney; N. E. Israeloff; R. Arinero; G. A. Schwartz; A. Alegria; Ph. Tordjeman; J. Colmenero
Appl. Phys. Lett. 96, 213110 (2010) https://doi.org/10.1063/1.3431288
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Defect-induced activation of symmetry forbidden infrared resonances in individual metallic nanorods
F. Neubrech; A. Garcia-Etxarri; D. Weber; J. Bochterle; H. Shen; M. Lamy de la Chapelle; G. W. Bryant; J. Aizpurua; A. Pucci
Appl. Phys. Lett. 96, 213111 (2010) https://doi.org/10.1063/1.3437093
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Electronic structure study of Li+/OH− modified single-walled carbon nanotubes by soft-x-ray absorption and resonant emission spectroscopy
Jun Zhong; Li Song; Jauwern Chiou; Chungli Dong; Xianqing Liang; Dongliang Chen; Sishen Xie; Way-Faung Pong; Chinglin Chang; Jinghua Guo; Ziyu Wu
Appl. Phys. Lett. 96, 213112 (2010) https://doi.org/10.1063/1.3441027
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Ultrahigh secondary electron emission of carbon nanotubes
Jun Luo; Jamie H. Warner; Chaoqun Feng; Yagang Yao; Zhong Jin; Huiliang Wang; Caofeng Pan; Sheng Wang; Leijing Yang; Yan Li; Jin Zhang; Andrew A. R. Watt; Lian-mao Peng; Jing Zhu; G. Andrew D. Briggs
Appl. Phys. Lett. 96, 213113 (2010) https://doi.org/10.1063/1.3442491
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Comparison of thermal conductivity in nanodot nanocomposites and nanograined nanocomposites
Chanyoung Kang; Hyoungjoon Kim; Sung-Geun Park; Woochul Kim
Appl. Phys. Lett. 96, 213114 (2010) https://doi.org/10.1063/1.3436568
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A synthesis route of gold nanoparticles without using a reducing agent
C. Vargas-Hernandez; M. M. Mariscal; R. Esparza; M. J. Yacaman
Appl. Phys. Lett. 96, 213115 (2010) https://doi.org/10.1063/1.3442479
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Optical identification of atomically thin dichalcogenide crystals
A Castellanos-Gomez; N Agraït; G Rubio-Bollinger
Appl. Phys. Lett. 96, 213116 (2010) https://doi.org/10.1063/1.3442495
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Electronic structures of fully fluorinated and semifluorinated zinc oxide sheets
Yanli Wang; Yi Ding; Jun Ni; Siqi Shi; Chaorong Li; Jianjun Shi
Appl. Phys. Lett. 96, 213117 (2010) https://doi.org/10.1063/1.3442506
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ORGANIC ELECTRONICS AND PHOTONICS

White luminescence from single-layer devices of nonresonant polymer blends
Sergio Brovelli; Hao Guan; Gustaf Winroth; Oliver Fenwick; Francesco Di Stasio; Rusli Daik; W. James Feast; Francesco Meinardi; Franco Cacialli
Appl. Phys. Lett. 96, 213301 (2010) https://doi.org/10.1063/1.3387816
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A metallic molybdenum suboxide buffer layer for organic electronic devices
M. T. Greiner; M. G. Helander; Z. B. Wang; W. M. Tang; J. Qiu; Z. H. Lu
Appl. Phys. Lett. 96, 213302 (2010) https://doi.org/10.1063/1.3432447
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Photochemical control of the carrier mobility in pentacene-based organic thin-film transistors
Marco Marchl; Andrej W. Golubkov; Matthias Edler; Thomas Griesser; Peter Pacher; Anja Haase; Barbara Stadlober; Maria R. Belegratis; Gregor Trimmel; Egbert Zojer
Appl. Phys. Lett. 96, 213303 (2010) https://doi.org/10.1063/1.3432672
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Role of diffusion in two-dimensional bimolecular recombination
A. V. Nenashev; F. Jansson; S. D. Baranovskii; R. Österbacka; A. V. Dvurechenskii; F. Gebhard
Appl. Phys. Lett. 96, 213304 (2010) https://doi.org/10.1063/1.3435469
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Distinct electronic switching behaviors of triphenylamine-containing polyimide memories with different bottom electrodes
Qisheng Liu; Kejian Jiang; Lihua Wang; Yongqiang Wen; Jingxia Wang; Ying Ma; Yanlin Song
Appl. Phys. Lett. 96, 213305 (2010) https://doi.org/10.1063/1.3431658
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Dependence of Meyer–Neldel energy on energetic disorder in organic field effect transistors
Mujeeb Ullah; I. I. Fishchuk; A. Kadashchuk; P. Stadler; A. Pivrikas; C. Simbrunner; V. N. Poroshin; N. S. Sariciftci; H. Sitter
Appl. Phys. Lett. 96, 213306 (2010) https://doi.org/10.1063/1.3435477
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DEVICE PHYSICS

Conduction band discontinuity and electron confinement at the SixGe1−x/Ge interface
G. Mazzeo; E. Yablonovitch; H. W. Jiang; Y. Bai; E. A. Fitzgerald
Appl. Phys. Lett. 96, 213501 (2010) https://doi.org/10.1063/1.3432066
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Carrier dynamics of terahertz emission based on strained SiGe/Si single quantum well
K. M. Hung; J.-Y. Kuo; C. C. Hong; H. H. Cheng; G. Sun; R. A. Soref
Appl. Phys. Lett. 96, 213502 (2010) https://doi.org/10.1063/1.3432075
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Enhanced conversion efficiencies for pillar array solar cells fabricated from crystalline silicon with short minority carrier diffusion lengths
Heayoung P. Yoon; Yu A. Yuwen; Chito E. Kendrick; Greg D. Barber; Nikolas J. Podraza; Joan M. Redwing; Thomas E. Mallouk; Christopher R. Wronski; Theresa S. Mayer
Appl. Phys. Lett. 96, 213503 (2010) https://doi.org/10.1063/1.3432449
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Efficient light management scheme for thin film silicon solar cells via transparent random nanostructures fabricated by nanoimprinting
Corsin Battaglia; Karin Söderström; Jordi Escarré; Franz-Josef Haug; Didier Dominé; Peter Cuony; Mathieu Boccard; Grégory Bugnon; Céline Denizot; Matthieu Despeisse; Andrea Feltrin; Christophe Ballif
Appl. Phys. Lett. 96, 213504 (2010) https://doi.org/10.1063/1.3432739
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Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application
Jiayong Zhang; Xiaofeng Wang; Xiaodong Wang; Huili Ma; Kaifang Cheng; Zhongchao Fan; Yan Li; An Ji; Fuhua Yang
Appl. Phys. Lett. 96, 213505 (2010) https://doi.org/10.1063/1.3431297
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Enhanced dissociation of charge-transfer states in narrow band gap polymer:fullerene solar cells processed with 1,8-octanedithiol
D. J. D. Moet; M. Lenes; M. Morana; H. Azimi; C. J. Brabec; P. W. M. Blom
Appl. Phys. Lett. 96, 213506 (2010) https://doi.org/10.1063/1.3435468
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Pretilt angle control and multidomain alignment of liquid crystals by using polyimide mixed with liquid crystalline prepolymer
Ki-Han Kim; Jong-In Baek; Byoung-Ho Cheong; Hwan-Young Choi; Sung Tae Shin; Jae Chang Kim; Tae-Hoon Yoon
Appl. Phys. Lett. 96, 213507 (2010) https://doi.org/10.1063/1.3435483
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Photocurrent increase in n-i-p thin film silicon solar cells by guided mode excitation via grating coupler
Karin Söderström; Franz-Josef Haug; Jordi Escarré; Oscar Cubero; Christophe Ballif
Appl. Phys. Lett. 96, 213508 (2010) https://doi.org/10.1063/1.3435481
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Light-powered micromotor driven by geometry-assisted, asymmetric photon-heating and subsequent gas convection
Li-Hsin Han; Shaomin Wu; J. Christopher Condit; Nate J. Kemp; Thomas E. Milner; Marc D. Feldman; Shaochen Chen
Appl. Phys. Lett. 96, 213509 (2010) https://doi.org/10.1063/1.3431741
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Digital circuits using self-shunted Nb/NbxSi1−x/Nb Josephson junctions
David Olaya; Paul D. Dresselhaus; Samuel P. Benz; Anna Herr; Quentin P. Herr; Alexander G. Ioannidis; Donald L. Miller; A. W. Kleinsasser
Appl. Phys. Lett. 96, 213510 (2010) https://doi.org/10.1063/1.3432065
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Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer
Shinhyuk Yang; Doo-Hee Cho; Min Ki Ryu; Sang-Hee Ko Park; Chi-Sun Hwang; Jin Jang; Jae Kyeong Jeong
Appl. Phys. Lett. 96, 213511 (2010) https://doi.org/10.1063/1.3432445
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Current-induced degradation of high performance deep ultraviolet light emitting diodes
Craig G. Moe; Meredith L. Reed; Gregory A. Garrett; Anand V. Sampath; Troy Alexander; Hongen Shen; Michael Wraback; Yuriy Bilenko; Maxim Shatalov; Jinwei Yang; Wenhong Sun; Jianyu Deng; Remis Gaska
Appl. Phys. Lett. 96, 213512 (2010) https://doi.org/10.1063/1.3435485
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Channel stress measurements of 45 nm node transistors with embedded silicon-germanium source and drain using ultraviolet Raman spectroscopy
C. P. Wong; J. Kasim; J. P. Liu; A. See; Z. X. Shen
Appl. Phys. Lett. 96, 213513 (2010) https://doi.org/10.1063/1.3431295
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Modeling the capacitance-voltage response of In 0.53 Ga 0.47 As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections
T. P. O’Regan; P. K. Hurley; B. Sorée; M. V. Fischetti
Appl. Phys. Lett. 96, 213514 (2010) https://doi.org/10.1063/1.3436645
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Influence of uniaxial mechanical stress on the high frequency performance of metal-oxide-semiconductor field effect transistors on (100) Si wafer
Younggun Han; Masaaki Koganemaru; Toru Ikeda; Noriyuki Miyazaki; Woon Choi; Hajime Tomokage
Appl. Phys. Lett. 96, 213515 (2010) https://doi.org/10.1063/1.3428793
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Improvement of infrared detection using Ge quantum dots multilayer structure
M. Kolahdouz; A. Afshar Farniya; L. Di Benedetto; H. H. Radamson
Appl. Phys. Lett. 96, 213516 (2010) https://doi.org/10.1063/1.3441120
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BIOPHYSICS AND BIO-INSPIRED SYSTEMS

Single DNA molecule detection in an optical trap using surface-enhanced Raman scattering
Satish Rao; Saurabh Raj; Stefan Balint; Carlota Bardina Fons; Susana Campoy; Montserrat Llagostera; Dmitri Petrov
Appl. Phys. Lett. 96, 213701 (2010) https://doi.org/10.1063/1.3431628
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Optical sensing of square lattice photonic crystal point-shifted nanocavity for protein adsorption detection
Tsan-Wen Lu; Pin-Tso Lin; Kuan-Un Sio; Po-Tsung Lee
Appl. Phys. Lett. 96, 213702 (2010) https://doi.org/10.1063/1.3436550
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Biocompatibility of single crystalline Fe70Pd30 ferromagnetic shape memory films
Y. Ma; M. Zink; S. G. Mayr
Appl. Phys. Lett. 96, 213703 (2010) https://doi.org/10.1063/1.3435260
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Quantitatively linking collagen alteration and epithelial tumor progression by second harmonic generation microscopy
Shuangmu Zhuo; Jianxin Chen; Guizhu Wu; Shusen Xie; Liqin Zheng; Xingshan Jiang; Xiaoqin Zhu
Appl. Phys. Lett. 96, 213704 (2010) https://doi.org/10.1063/1.3441337
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Single cell contractility studies based on compact moiré system over periodic gratings
Xiaoyu Zheng; Howard Surks; Xin Zhang
Appl. Phys. Lett. 96, 213705 (2010) https://doi.org/10.1063/1.3432448
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Improved stability of free-standing lipid bilayers based on nanoporous alumina films
Ayumi Hirano-Iwata; Tasuku Taira; Azusa Oshima; Yasuo Kimura; Michio Niwano
Appl. Phys. Lett. 96, 213706 (2010) https://doi.org/10.1063/1.3441298
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INTERDISCIPLINARY AND GENERAL PHYSICS

Model for thermoacoustic emission from solids
Hanping Hu; Tao Zhu; Jun Xu
Appl. Phys. Lett. 96, 214101 (2010) https://doi.org/10.1063/1.3435429
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Triple-junction contribution to diffusion in nanocrystalline Si
A. Portavoce; L. Chow; J. Bernardini
Appl. Phys. Lett. 96, 214102 (2010) https://doi.org/10.1063/1.3435476
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Magnetopiezoelastic energy harvesting driven by random excitations
G. Litak; M. I. Friswell; S. Adhikari
Appl. Phys. Lett. 96, 214103 (2010) https://doi.org/10.1063/1.3436553
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Electromagnetic control of coupled droplets
Bernard A. Malouin, Jr.; Michael J. Vogel; Amir H. Hirsa
Appl. Phys. Lett. 96, 214104 (2010) https://doi.org/10.1063/1.3428787
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COMMENTS

Comment on “Direct measurement of minority carriers diffusion length using Kelvin probe force microscopy” [Appl. Phys. Lett. 75, 2435 (1999)]
Mohammed Shahriar Sabuktagin
Appl. Phys. Lett. 96, 216101 (2010) https://doi.org/10.1063/1.3431743
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Response to “Comment on ‘Direct measurement of minority carriers diffusion length using Kelvin probe force microscopy’ ” [Appl. Phys. Lett. 96, 216101 (2010)]
R. Shikler; Y. Rosenwaks
Appl. Phys. Lett. 96, 216102 (2010) https://doi.org/10.1063/1.3431744
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ERRATA

Publisher's Note: “Study on the electrical conduction mechanism of bipolar resistive switching TiO2 thin films using impedance spectroscopy” [Appl. Phys. Lett. 96, 152909 (2010)]
Min Hwan Lee; Kyung Min Kim; Gun Hwan Kim; Jun Yeong Seok; Seul Ji Song; Jung Ho Yoon; Cheol Seong Hwang
Appl. Phys. Lett. 96, 219901 (2010) https://doi.org/10.1063/1.3446646
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Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer
Mritunjay Kumar, Vishal Khandelwal, et al.
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