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LASERS, OPTICS, AND OPTOELECTRONICS

Drawn metamaterials with plasmonic response at terahertz frequencies

A. Tuniz; B. T. Kuhlmey; R. Lwin; A. Wang; J. Anthony; R. Leonhardt; S. C. Fleming

Appl. Phys. Lett. 96, 191101 (2010) https://doi.org/10.1063/1.3428576

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Dual wavelength GaSb based type I quantum well mid-infrared light emitting diodes

Seungyong Jung; Sergey Suchalkin; Gela Kipshidze; David Westerfeld; Eric Golden; Donald Snyder; Gregory Belenky

Appl. Phys. Lett. 96, 191102 (2010) https://doi.org/10.1063/1.3425899

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Linear polarization rotators based on dye-doped liquid crystal cells

Chia-Yi Huang; Hong-Yi Tsai; Yi-Hong Wang; Chong-Ming Huang; Kuang-Yao Lo; Chia-Rong Lee

Appl. Phys. Lett. 96, 191103 (2010) https://doi.org/10.1063/1.3428773

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Ultrafast laser inscription of bistable and reversible waveguides in strontium barium niobate crystals

D. Jaque; N. D. Psaila; R. R. Thomson; F. Chen; L. M. Maestro; A. Ródenas; D. T. Reid; A. K. Kar

Appl. Phys. Lett. 96, 191104 (2010) https://doi.org/10.1063/1.3429584

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On ternary nitride substrates for visible semiconductor light-emitters

T. K. Sharma; E. Towe

Appl. Phys. Lett. 96, 191105 (2010) https://doi.org/10.1063/1.3425885

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Two-photon absorption photocurrent in p-i-n diode embedded silicon microdisk resonators

Hui Chen; Andrew W. Poon

Appl. Phys. Lett. 96, 191106 (2010) https://doi.org/10.1063/1.3430548

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Evolution of locally excited avalanches in semiconductors

Z. L. Yuan; J. F. Dynes; A. W. Sharpe; A. J. Shields

Appl. Phys. Lett. 96, 191107 (2010) https://doi.org/10.1063/1.3425737

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Three-dimensional surface current loops in terahertz responsive microarrays

Jatinder S. Randhawa; Saumya S. Gurbani; Michael D. Keung; Devin P. Demers; Megan R. Leahy-Hoppa; David H. Gracias

Appl. Phys. Lett. 96, 191108 (2010) https://doi.org/10.1063/1.3428657

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High-power surface emission from terahertz distributed feedback lasers with a dual-slit unit cell

Lukas Mahler; Alessandro Tredicucci; Fabio Beltram; Christoph Walther; Jérôme Faist; Harvey E. Beere; David A. Ritchie

Appl. Phys. Lett. 96, 191109 (2010) https://doi.org/10.1063/1.3430522

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Adiabatic compression of terahertz waves using metal flares

Michael Theuer; René Beigang; Daniel R. Grischkowsky

Appl. Phys. Lett. 96, 191110 (2010) https://doi.org/10.1063/1.3430740

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PLASMAS AND ELECTRICAL DISCHARGES

Pressure-independent point in current-voltage characteristics of coplanar electrode microplasma devices operated in neon

Lingguo Meng; Jianping Xing; Zhihu Liang; Chunliang Liu; Zhaojun Lin

Appl. Phys. Lett. 96, 191501 (2010) https://doi.org/10.1063/1.3428789

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Generation of ultrahigh frequency air microplasma in a magnetic loop and effects of pulse modulation on operation

Mazdak Taghioskoui; Joshua Perlow; Mona Zaghloul; Akbar Montaser

Appl. Phys. Lett. 96, 191502 (2010) https://doi.org/10.1063/1.3429093

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Characterization and mechanism studies of dielectric barrier discharges generated at atmospheric pressure

Jie Tang; Yixiang Duan; Wei Zhao

Appl. Phys. Lett. 96, 191503 (2010) https://doi.org/10.1063/1.3430008

Abstract

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Viability of using near infrared PbS quantum dots as active materials in luminescent solar concentrators

G. V. Shcherbatyuk; R. H. Inman; C. Wang; R. Winston; S. Ghosh

Appl. Phys. Lett. 96, 191901 (2010) https://doi.org/10.1063/1.3422485

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Biexciton emission from sol-gel ZnMgO nanopowders

C. H. Chia; Y. J. Lai; W. L. Hsu; T. C. Han; J. W. Chiou; Y. M. Hu; Y. C. Lin; W. C. Fan; W. C. Chou

Appl. Phys. Lett. 96, 191902 (2010) https://doi.org/10.1063/1.3428780

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Influence of the ${As}_{2} / {As}_{4}$ growth modes on the formation of quantum dot-like InAs islands grown on InAlGaAs/InP (100)

C. Gilfert; E.-M. Pavelescu; J. P. Reithmaier

Appl. Phys. Lett. 96, 191903 (2010) https://doi.org/10.1063/1.3428956

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The effect of nanocrystallite size in monoclinic ${HfO}_{2}$ films on lattice expansion and near-edge optical absorption

M. C. Cisneros-Morales; C. R. Aita

Appl. Phys. Lett. 96, 191904 (2010) https://doi.org/10.1063/1.3428965

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Structural defects working as active oxygen-reduction sites in partially oxidized Ta-carbonitride core-shell particles probed by using surface-sensitive conversion-electron-yield x-ray absorption spectroscopy

Hideto Imai; Masashi Matsumoto; Takashi Miyazaki; Shinji Fujieda; Akimitsu Ishihara; Motoko Tamura; Ken-ichiro Ota

Appl. Phys. Lett. 96, 191905 (2010) https://doi.org/10.1063/1.3430543

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Kinetic roughening of a ZnO grain boundary

Sung Bo Lee; Young-Min Kim; Dong-Su Ko; Tae-Young Ahn; Young-Woon Kim; Jucheol Park

Appl. Phys. Lett. 96, 191906 (2010) https://doi.org/10.1063/1.3428369

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Thermal kinetics of ${OH}^{-}$ ions in ${LiNbO}_{3} : Mg$ crystals above the photorefractive threshold

K. Lengyel; L. Kovács; Á. Péter; K. Polgár; G. Corradi; A. Baraldi; R. Capelletti

Appl. Phys. Lett. 96, 191907 (2010) https://doi.org/10.1063/1.3428772

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Radiation-induced metastable ordered phase in gallium nitride

Manabu Ishimaru

Appl. Phys. Lett. 96, 191908 (2010) https://doi.org/10.1063/1.3430046

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Optical and microstructural properties versus indium content in ${In}_{x} {Ga}_{1 - x} N$ films grown by metal organic chemical vapor deposition

A. Gokarna; A. Gauthier-Brun; W. Liu; Y. Androussi; E. Dumont; E. Dogheche; J. H. Teng; S. J. Chua; D. Decoster

Appl. Phys. Lett. 96, 191909 (2010) https://doi.org/10.1063/1.3425761

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Epitaxial graphene on cubic SiC(111)/Si(111) substrate

A. Ouerghi; A. Kahouli; D. Lucot; M. Portail; L. Travers; J. Gierak; J. Penuelas; P. Jegou; A. Shukla; T. Chassagne; M. Zielinski

Appl. Phys. Lett. 96, 191910 (2010) https://doi.org/10.1063/1.3427406

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Photoluminescence studies of high-quality InAlN layer lattice-matched to GaN grown by metal organic chemical vapor deposition

Z. T. Chen; Y. Sakai; T. Egawa

Appl. Phys. Lett. 96, 191911 (2010) https://doi.org/10.1063/1.3430737

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Interface effect on the photocurrent: A comparative study on Pt sandwiched $({Bi}_{3.7} {Nd}_{0.3}) {Ti}_{3} O_{12}$ and $Pb ({Zr}_{0.2} {Ti}_{0.8}) O_{3}$ films

Dawei Cao; Jie Xu; Liang Fang; Wen Dong; Fengang Zheng; Mingrong Shen

Appl. Phys. Lett. 96, 192101 (2010) https://doi.org/10.1063/1.3427500

Abstract

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Thin-film transistors based on p-type ${Cu}_{2} O$ thin films produced at room temperature

Elvira Fortunato; Vitor Figueiredo; Pedro Barquinha; Elangovan Elamurugu; Raquel Barros; Gonçalo Gonçalves; Sang-Hee Ko Park; Chi-Sun Hwang; Rodrigo Martins

Appl. Phys. Lett. 96, 192102 (2010) https://doi.org/10.1063/1.3428434

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Thermal shot noise in top-gated single carbon nanotube field effect transistors

J. Chaste; E. Pallecchi; P. Morfin; G. Fève; T. Kontos; J.-M. Berroir; P. Hakonen; B. Plaçais

Appl. Phys. Lett. 96, 192103 (2010) https://doi.org/10.1063/1.3425889

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High-temperature electrical transport behaviors of the layered ${Ca}_{2} {Co}_{2} O_{5}$ -based ceramics

Jinle Lan; Yuan-Hua Lin; Guo-jing Li; Shaoliang Xu; Yong Liu; Ce-Wen Nan; Shu-Jin Zhao

Appl. Phys. Lett. 96, 192104 (2010) https://doi.org/10.1063/1.3425891

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Selective atomic layer deposition of ${HfO}_{2}$ on copper patterned silicon substrates

Qian Tao; Gregory Jursich; Christos Takoudis

Appl. Phys. Lett. 96, 192105 (2010) https://doi.org/10.1063/1.3428771

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Charge detrapping and dielectric breakdown of nanocrystalline zinc oxide embedded zirconium-doped hafnium oxide high- $k$ dielectrics for nonvolatile memories

Chia-Han Yang; Yue Kuo; Chen-Han Lin

Appl. Phys. Lett. 96, 192106 (2010) https://doi.org/10.1063/1.3429590

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Nanoscale chemical state analysis of resistance random access memory device reacting with Ti

Hisashi Shima; Takashi Nakano; Hiro Akinaga

Appl. Phys. Lett. 96, 192107 (2010) https://doi.org/10.1063/1.3373594

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$p$ -type conduction in sputtered indium oxide films

Jolanta Stankiewicz; Francisco Villuendas; Rafael Alcalá

Appl. Phys. Lett. 96, 192108 (2010) https://doi.org/10.1063/1.3430035

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Two-dimensional electron or hole gas at ZnO/6H-SiC interface

Y. H. Lu; B. Xu; R. Q. Wu; Y. P. Feng

Appl. Phys. Lett. 96, 192109 (2010) https://doi.org/10.1063/1.3425667

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Group-II acceptors in wurtzite AlN: A screened hybrid density functional study

Áron Szabó; Ngyen Tien Son; Erik Janzén; Adam Gali

Appl. Phys. Lett. 96, 192110 (2010) https://doi.org/10.1063/1.3429086

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Transport properties of ${LaTiO}_{3} / {SrTiO}_{3}$ heterostructures

R. Ohtsuka; M. Matvejeff; K. Nishio; R. Takahashi; M. Lippmaa

Appl. Phys. Lett. 96, 192111 (2010) https://doi.org/10.1063/1.3430006

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Spin-filtering transport and switching effect of MnCu single-molecule magnet

H. Hao; X. H. Zheng; Z. X. Dai; Z. Zeng

Appl. Phys. Lett. 96, 192112 (2010) https://doi.org/10.1063/1.3430063

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Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms

H. Y. Peng; G. P. Li; J. Y. Ye; Z. P. Wei; Z. Zhang; D. D. Wang; G. Z. Xing; T. Wu

Appl. Phys. Lett. 96, 192113 (2010) https://doi.org/10.1063/1.3428365

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Physical and chemical characterization of combinatorial metal gate electrode Ta–C–N library film

K.-S. Chang; M. L. Green; I. Levin; J. R. Hattrick-Simpers; C. Jaye; D. A. Fischer; I. Takeuchi; S. De Gendt

Appl. Phys. Lett. 96, 192114 (2010) https://doi.org/10.1063/1.3428788

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High-mobility low-temperature ZnO transistors with low-voltage operation

Hyojin Bong; Wi Hyoung Lee; Dong Yun Lee; Beom Joon Kim; Jeong Ho Cho; Kilwon Cho

Appl. Phys. Lett. 96, 192115 (2010) https://doi.org/10.1063/1.3428357

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MAGNETISM AND SUPERCONDUCTIVITY

Vortex manipulation in a superconducting matrix with view on applications

M. V. Milošević; F. M. Peeters

Appl. Phys. Lett. 96, 192501 (2010) https://doi.org/10.1063/1.3425672

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Flexural deformation in a compositionally stepped ferrite and magnetoelectric effects in a composite with piezoelectrics

S. K. Mandal; G. Sreenivasulu; V. M. Petrov; G. Srinivasan

Appl. Phys. Lett. 96, 192502 (2010) https://doi.org/10.1063/1.3428774

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The effect of trapping superparamagnetic beads on domain wall motion

Matthew T. Bryan; Julian Dean; Thomas Schrefl; Faye E. Thompson; John Haycock; Dan A. Allwood

Appl. Phys. Lett. 96, 192503 (2010) https://doi.org/10.1063/1.3428775

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Electric-field-control of magnetic remanence of ${NiFe}_{2} O_{4}$ thin film epitaxially grown on $Pb ({Mg}_{1 / 3} {Nb}_{2 / 3}) O_{3} - {PbTiO}_{3}$

Jung Hwan Park; Young Kyu Jeong; Sangwoo Ryu; Jong Yeog Son; Hyun Myung Jang

Appl. Phys. Lett. 96, 192504 (2010) https://doi.org/10.1063/1.3427311

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Neutron scattering measurements of magnetic excitations in Gd/Y superlattices

A. T. D. Grünwald; A. R. Wildes; W. Schmidt; E. V. Tartakovskaya; G. Nowak; K. Theis-Bröhl; A. Schreyer

Appl. Phys. Lett. 96, 192505 (2010) https://doi.org/10.1063/1.3428425

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Simulation of magnetization switching by electric-field manipulation of magnetic anisotropy

D. Chiba; Y. Nakatani; F. Matsukura; H. Ohno

Appl. Phys. Lett. 96, 192506 (2010) https://doi.org/10.1063/1.3428959

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Tunnel magnetoresistance properties and film structures of double MgO barrier magnetic tunnel junctions

H. D. Gan; S. Ikeda; W. Shiga; J. Hayakawa; K. Miura; H. Yamamoto; H. Hasegawa; F. Matsukura; T. Ohkubo; K. Hono; H. Ohno

Appl. Phys. Lett. 96, 192507 (2010) https://doi.org/10.1063/1.3429594

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Current-induced switching of magnetic vortex core in ferromagnetic elliptical disks

Keisuke Yamada; Shinya Kasai; Yoshinobu Nakatani; Kensuke Kobayashi; Teruo Ono

Appl. Phys. Lett. 96, 192508 (2010) https://doi.org/10.1063/1.3428792

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Nonlocal injection of spin current into a superconducting Nb wire

K. Ohnishi; T. Kimura; Y. Otani

Appl. Phys. Lett. 96, 192509 (2010) https://doi.org/10.1063/1.3427483

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Controllable magnetic property of SiC by anion-cation codoping

Hui Pan; Yong-Wei Zhang; Vivek Shenoy; Huajian Gao

Appl. Phys. Lett. 96, 192510 (2010) https://doi.org/10.1063/1.3428428

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DIELECTRICS AND FERROELECTRICITY

Tunable band gap in $Bi ({Fe}_{1 - x} {Mn}_{x}) O_{3}$ films

X. S. Xu; J. F. Ihlefeld; J. H. Lee; O. K. Ezekoye; E. Vlahos; R. Ramesh; V. Gopalan; X. Q. Pan; D. G. Schlom; J. L. Musfeldt

Appl. Phys. Lett. 96, 192901 (2010) https://doi.org/10.1063/1.3427499

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Direct measurement of giant electrocaloric effect in ${BaTiO}_{3}$ multilayer thick film structure beyond theoretical prediction

Yang Bai; Guangping Zheng; Sanqiang Shi

Appl. Phys. Lett. 96, 192902 (2010) https://doi.org/10.1063/1.3430045

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Piezoelectric activity of relaxor- ${PbTiO}_{3}$ based single crystals and polycrystalline ceramics at cryogenic temperatures: Intrinsic and extrinsic contributions

Fei Li; Shujun Zhang; Zhuo Xu; Xiaoyong Wei; Jun Luo; Thomas R. Shrout

Appl. Phys. Lett. 96, 192903 (2010) https://doi.org/10.1063/1.3430059

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Effects of vacuum ultraviolet and ultraviolet irradiation on ultrathin hafnium-oxide dielectric layers on (100)Si as measured with electron-spin resonance

H. Ren; S. L. Cheng; Y. Nishi; J. L. Shohet

Appl. Phys. Lett. 96, 192904 (2010) https://doi.org/10.1063/1.3430570

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Electric energy storage properties of poly(vinylidene fluoride)

Wenjing Li (李文静); Qingjie Meng (孟庆杰); Yuansuo Zheng (郑元锁); Zhicheng Zhang (张志成); Weimin Xia (夏卫民); Zhuo Xu (徐卓)

Appl. Phys. Lett. 96, 192905 (2010) https://doi.org/10.1063/1.3428656

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NANOSCALE SCIENCE AND DESIGN

Strain engineering in Si via closely stacked, site-controlled SiGe islands

J. J. Zhang; N. Hrauda; H. Groiss; A. Rastelli; J. Stangl; F. Schäffler; O. G. Schmidt; G. Bauer

Appl. Phys. Lett. 96, 193101 (2010) https://doi.org/10.1063/1.3425776

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Dielectric constants of atomically thin silicon channels with double gate

Hiroyuki Kageshima; Akira Fujiwara

Appl. Phys. Lett. 96, 193102 (2010) https://doi.org/10.1063/1.3427364

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Tunable fishnet metamaterials infiltrated by liquid crystals

Alexander Minovich; Dragomir N. Neshev; David A. Powell; Ilya V. Shadrivov; Yuri S. Kivshar

Appl. Phys. Lett. 96, 193103 (2010) https://doi.org/10.1063/1.3427429

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Incorporation of the dopants Si and Be into GaAs nanowires

M. Hilse; M. Ramsteiner; S. Breuer; L. Geelhaar; H. Riechert

Appl. Phys. Lett. 96, 193104 (2010) https://doi.org/10.1063/1.3428358

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Exchange bias in single-crystalline CuO nanowires

C. Díaz-Guerra; M. Vila; J. Piqueras

Appl. Phys. Lett. 96, 193105 (2010) https://doi.org/10.1063/1.3428658

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Large scale computer simulations of strain distribution and electron effective masses in silicon $⟨ 100 ⟩$ nanowires

Christian Tuma; Alessandro Curioni

Appl. Phys. Lett. 96, 193106 (2010) https://doi.org/10.1063/1.3428660

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Effective recombination velocity of textured surfaces

Kanglin Xiong; Shulong Lu; Desheng Jiang; Jianrong Dong; Hui Yang

Appl. Phys. Lett. 96, 193107 (2010) https://doi.org/10.1063/1.3396078

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Ultraviolet optical near-fields of microspheres imprinted in phase change films

J. Siegel; D. Puerto; J. Solis; F. J. García de Abajo; C. N. Afonso; M. Longo; C. Wiemer; M. Fanciulli; P. Kühler; M. Mosbacher; P. Leiderer

Appl. Phys. Lett. 96, 193108 (2010) https://doi.org/10.1063/1.3428582

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Electrical current flow at conductive nanowires formed in GaN thin films by a dislocation template technique

Shin-ichi Amma; Yuki Tokumoto; Keiichi Edagawa; Naoya Shibata; Teruyasu Mizoguchi; Takahisa Yamamoto; Yuichi Ikuhara

Appl. Phys. Lett. 96, 193109 (2010) https://doi.org/10.1063/1.3429604

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Cyclotron resonance of two-dimensional electron system affected by neighboring quantum dot layer

K. Takehana; Y. Imanaka; T. Takamasu; M. Henini

Appl. Phys. Lett. 96, 193110 (2010) https://doi.org/10.1063/1.3430062

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Transversal electrostatic strength of patterned collector affecting alignment of electrospun nanofibers

Marek Pokorny; Krzysztof Niedoba; Vladimir Velebny

Appl. Phys. Lett. 96, 193111 (2010) https://doi.org/10.1063/1.3430507

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Defect reduction in silicon nanoparticles by low-temperature vacuum annealing

S. Niesar; A. R. Stegner; R. N. Pereira; M. Hoeb; H. Wiggers; M. S. Brandt; M. Stutzmann

Appl. Phys. Lett. 96, 193112 (2010) https://doi.org/10.1063/1.3428359

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Nanoelectromechanical torsion switch of low operation voltage for nonvolatile memory application

Wenfeng Xiang; Chengkuo Lee

Appl. Phys. Lett. 96, 193113 (2010) https://doi.org/10.1063/1.3428781

Abstract

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Simple modeling of self-oscillations in nanoelectromechanical systems

A. Lazarus; T. Barois; S. Perisanu; P. Poncharal; P. Manneville; E. de Langre; S. T. Purcell; P. Vincent; A. Ayari

Appl. Phys. Lett. 96, 193114 (2010) https://doi.org/10.1063/1.3396191

Abstract

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Two-dimensional graphene superlattice made with partial hydrogenation

Ming Yang; Argo Nurbawono; Chun Zhang; Yuan Ping Feng; Ariando

Appl. Phys. Lett. 96, 193115 (2010) https://doi.org/10.1063/1.3425664

Abstract

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ZnO–ZnTe nanocone heterojunctions

Sang Hyun Lee; X.-G. Zhang; Barton Smith; Sung Seok A. Seo; Zane W. Bell; Jun Xu

Appl. Phys. Lett. 96, 193116 (2010) https://doi.org/10.1063/1.3430604

Abstract

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Using graded barriers to control the optical properties of $ZnO / {Zn}_{0.7} {Mg}_{0.3} O$ quantum wells with an intrinsic internal electric field

C. R. Hall; L. V. Dao; K. Koike; S. Sasa; H. H. Tan; M. Inoue; M. Yano; C. Jagadish; J. A. Davis

Appl. Phys. Lett. 96, 193117 (2010) https://doi.org/10.1063/1.3428430

Abstract

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ORGANIC ELECTRONICS AND PHOTONICS

Charge carrier densities in chemically doped organic semiconductors verified by two independent techniques

M. Lehnhardt; S. Hamwi; M. Hoping; J. Reinker; T. Riedl; W. Kowalsky

Appl. Phys. Lett. 96, 193301 (2010) https://doi.org/10.1063/1.3427416

Abstract

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Charge generation layers comprising transition metal-oxide/organic interfaces: Electronic structure and charge generation mechanism

J. Meyer; M. Kröger; S. Hamwi; F. Gnam; T. Riedl; W. Kowalsky; A. Kahn

Appl. Phys. Lett. 96, 193302 (2010) https://doi.org/10.1063/1.3427430

Abstract

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Semicrystalline woodpile photonic crystals without complicated alignment via soft lithography

Jae-Hwang Lee; Ping Kuang; Wai Leung; Yong-Sung Kim; Joong-Mok Park; Henry Kang; Kristen Constant; Kai-Ming Ho

Appl. Phys. Lett. 96, 193303 (2010) https://doi.org/10.1063/1.3425756

Abstract

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Spatial redistribution of the optical field intensity in inverted polymer solar cells

Fang-Chung Chen; Jyh-Lih Wu; Yi Hung

Appl. Phys. Lett. 96, 193304 (2010) https://doi.org/10.1063/1.3430060

Abstract

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DEVICE PHYSICS

Tungsten oxide as a buffer layer inserted at the ${SnO}_{2} / p - a -SiC$ interface of pin-type amorphous silicon based solar cells

Liang Fang; Seung Jae Baik; Koeng Su Lim; Seung Hyup Yoo; Myung Soo Seo; Sang Jung Kang; Jung Won Seo

Appl. Phys. Lett. 96, 193501 (2010) https://doi.org/10.1063/1.3427396

Abstract

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Resistance switching of $Cu / {SiO}_{2}$ memory cells studied under voltage and current-driven modes

Y. Bernard; P. Gonon; V. Jousseaume

Appl. Phys. Lett. 96, 193502 (2010) https://doi.org/10.1063/1.3428779

Abstract

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The effect of traps on the performance of graphene field-effect transistors

J. Zhu; R. Jhaveri; J. C. S. Woo

Appl. Phys. Lett. 96, 193503 (2010) https://doi.org/10.1063/1.3428785

Abstract

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Acoustic electromechanical energy loss mechanism for suspended micro- and nanoelectromechanical resonators

André Gusso

Appl. Phys. Lett. 96, 193504 (2010) https://doi.org/10.1063/1.3428786

Abstract

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Nonpolar resistive switching in the Pt/MgO/Pt nonvolatile memory device

Hsin-Hung Huang; Wen-Chieh Shih; Chih-Huang Lai

Appl. Phys. Lett. 96, 193505 (2010) https://doi.org/10.1063/1.3429024

Abstract

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The impact of ${SiN}_{x}$ gate insulators on amorphous indium-gallium-zinc oxide thin film transistors under bias-temperature-illumination stress

Ji Sim Jung; Kyoung Seok Son; Kwang-Hee Lee; Joon Seok Park; Tae Sang Kim; Jang-Yeon Kwon; Kwun-Bum Chung; Jin-Seong Park; Bonwon Koo; Sangyun Lee

Appl. Phys. Lett. 96, 193506 (2010) https://doi.org/10.1063/1.3429588

Abstract

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BIOPHYSICS AND BIO-INSPIRED SYSTEMS

Droplet electric separator microfluidic device for cell sorting

Feng Guo; Xing-Hu Ji; Kan Liu; Rong-Xiang He; Li-Bo Zhao; Zhi-Xiao Guo; Wei Liu; Shi-Shang Guo; Xing-Zhong Zhao

Appl. Phys. Lett. 96, 193701 (2010) https://doi.org/10.1063/1.3360812

Abstract

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INTERDISCIPLINARY AND GENERAL PHYSICS

Charge-induced wetting of aerosols

Byung Mook Weon; Jung Ho Je

Appl. Phys. Lett. 96, 194101 (2010) https://doi.org/10.1063/1.3430007

Abstract

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Threshold-variation-enhanced adaptability of response in a nanowire field-effect transistor network

Seiya Kasai; Kensuke Miura; Yuta Shiratori

Appl. Phys. Lett. 96, 194102 (2010) https://doi.org/10.1063/1.3428784

Abstract

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A high frequency GaN Lamb-wave sensor device

A. K. Pantazis; E. Gizeli; G. Konstantinidis

Appl. Phys. Lett. 96, 194103 (2010) https://doi.org/10.1063/1.3427484

Abstract

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Terahertz emission from metal-organic chemical vapor deposition grown Fe:InGaAs using 830 nm to $1.55 μ m$ excitation

C. D. Wood; O. Hatem; J. E. Cunningham; E. H. Linfield; A. G. Davies; P. J. Cannard; M. J. Robertson; D. G. Moodie

Appl. Phys. Lett. 96, 194104 (2010) https://doi.org/10.1063/1.3427191

Abstract

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COMMENTS

Comment on “Complete sets of elastic, dielectric, and piezoelectric properties of flux-grown [011]-poled $Pb ({Mg}_{1 / 3} {Nb}_{2 / 3}) O_{3} - (28 - 32) %$ ${PbTiO}_{3}$ single crystals” [Appl. Phys. Lett. 92, 142906 (2008)]

V. Yu. Topolov

Appl. Phys. Lett. 96, 196101 (2010) https://doi.org/10.1063/1.3429603

Extract

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

ORGANIC ELECTRONICS AND PHOTONICS

DEVICE PHYSICS

BIOPHYSICS AND BIO-INSPIRED SYSTEMS

INTERDISCIPLINARY AND GENERAL PHYSICS

COMMENTS

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