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Issues
26 April 2010
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating
Yu-Lian Cao (曹玉莲); Tao Yang (杨涛); Peng-Fei Xu (徐鹏飞); Hai-Ming Ji (季海铭); Yong-Xian Gu (谷永先); Xiao-Dong Wang (王晓东); Qing Wang (王青); Wen-Quan Ma (马文全); Liang-Hui Chen (陈良惠)
Appl. Phys. Lett. 96, 171101 (2010)
https://doi.org/10.1063/1.3418647
Large near-infrared lateral photovoltaic effect observed in Co/Si metal-semiconductor structures
Appl. Phys. Lett. 96, 171102 (2010)
https://doi.org/10.1063/1.3419903
Porous silicon structures for low-cost diffraction-based biosensing
Appl. Phys. Lett. 96, 171103 (2010)
https://doi.org/10.1063/1.3421545
Lensfree on-chip imaging using nanostructured surfaces
Bahar Khademhosseinieh; Ikbal Sencan; Gabriel Biener; Ting-Wei Su; Ahmet F. Coskun; Derek Tseng; Aydogan Ozcan
Appl. Phys. Lett. 96, 171106 (2010)
https://doi.org/10.1063/1.3405719
PLASMAS AND ELECTRICAL DISCHARGES
Supersonic regimes of plasma expansion during optical breakdown in air
Appl. Phys. Lett. 96, 171501 (2010)
https://doi.org/10.1063/1.3421537
Temporary-resolved measurement of electron density in small atmospheric plasmas
Appl. Phys. Lett. 96, 171502 (2010)
https://doi.org/10.1063/1.3389496
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
Optical and electronic properties of post-annealed ZnO:Al thin films
Appl. Phys. Lett. 96, 171902 (2010)
https://doi.org/10.1063/1.3419859
Structural transformation induced changes in the optical properties of nanocrystalline tungsten oxide thin films
Appl. Phys. Lett. 96, 171903 (2010)
https://doi.org/10.1063/1.3421540
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
Quantum cascade detectors for very long wave infrared detection
Appl. Phys. Lett. 96, 172101 (2010)
https://doi.org/10.1063/1.3409139
Electron energy band alignment at the interface
Appl. Phys. Lett. 96, 172105 (2010)
https://doi.org/10.1063/1.3413960
Space-charge-limited hole current in poly(9,9-dioctylfluorene) diodes
Appl. Phys. Lett. 96, 172107 (2010)
https://doi.org/10.1063/1.3391668
Electron and hole spin cooling efficiency in InAs quantum dots: The role of nuclear field
P. Desfonds; B. Eble; F. Fras; C. Testelin; F. Bernardot; M. Chamarro; B. Urbaszek; T. Amand; X. Marie; J. M. Gérard; V. Thierry-Mieg; A. Miard; A. Lemaître
Appl. Phys. Lett. 96, 172108 (2010)
https://doi.org/10.1063/1.3394010
Tunneling magnetoresistance on the surface of a topological insulator with periodic magnetic modulations
Appl. Phys. Lett. 96, 172109 (2010)
https://doi.org/10.1063/1.3421536
Stochastic resonance in a nanoscale Y-branch switch
Appl. Phys. Lett. 96, 172110 (2010)
https://doi.org/10.1063/1.3425669
MAGNETISM AND SUPERCONDUCTIVITY
Microstrip superconducting quantum interference device amplifier: Conditional stability
Appl. Phys. Lett. 96, 172501 (2010)
https://doi.org/10.1063/1.3377898
Anomalous magnetic field effects during pulsed injection metal-organic chemical vapor deposition of magnetite films
Appl. Phys. Lett. 96, 172502 (2010)
https://doi.org/10.1063/1.3418622
Giant magnetocaloric effects by tailoring the phase transitions
Appl. Phys. Lett. 96, 172504 (2010)
https://doi.org/10.1063/1.3399773
DIELECTRICS AND FERROELECTRICITY
Role of oxygen vacancies in -based gate stack breakdown
Appl. Phys. Lett. 96, 172901 (2010)
https://doi.org/10.1063/1.3416912
NANOSCALE SCIENCE AND DESIGN
Transport properties of corrugated graphene nanoribbons
Appl. Phys. Lett. 96, 173101 (2010)
https://doi.org/10.1063/1.3419821
Crystallization and high temperature shape memory behavior of sputter-deposited NiMnCoIn thin films
Appl. Phys. Lett. 96, 173102 (2010)
https://doi.org/10.1063/1.3407670
Crystallographic orientation dependence of compositional transition and valence band offset at interface formed using oxygen radicals
T. Suwa; A. Teramoto; Y. Kumagai; K. Abe; X. Li; Y. Nakao; M. Yamamoto; Y. Kato; T. Muro; T. Kinoshita; T. Ohmi; T. Hattori
Appl. Phys. Lett. 96, 173103 (2010)
https://doi.org/10.1063/1.3407515
A high-performance top-gate graphene field-effect transistor based frequency doubler
Appl. Phys. Lett. 96, 173104 (2010)
https://doi.org/10.1063/1.3413959
Temperature-dependent energy gap variation in InAs/GaAs quantum dots
Appl. Phys. Lett. 96, 173105 (2010)
https://doi.org/10.1063/1.3396986
Femtosecond pump-probe studies of reduced graphene oxide thin films
Appl. Phys. Lett. 96, 173106 (2010)
https://doi.org/10.1063/1.3421541
ORGANIC ELECTRONICS AND PHOTONICS
Electron spin resonance observation of field-induced charge carriers in ultrathin-film transistors of regioregular poly(3-hexylthiophene) with controlled in-plane chain orientation
Shun-ichiro Watanabe; Hisaaki Tanaka; Shin-ichi Kuroda; Akio Toda; Shusaku Nagano; Takahiro Seki; Atsushi Kimoto; Jiro Abe
Appl. Phys. Lett. 96, 173302 (2010)
https://doi.org/10.1063/1.3421538
DEVICE PHYSICS
Cantilever deflection measurement and actuation by an interdigitated transducer
Appl. Phys. Lett. 96, 173505 (2010)
https://doi.org/10.1063/1.3407516
The electric field enhancements by single-walled carbon nanotubes in photoelectrochemical solar cells
Appl. Phys. Lett. 96, 173506 (2010)
https://doi.org/10.1063/1.3405674
Phototransistor with nanocrystalline Si/amorphous Si bilayer channel
Appl. Phys. Lett. 96, 173507 (2010)
https://doi.org/10.1063/1.3422479
BIOPHYSICS AND BIO-INSPIRED SYSTEMS
INTERDISCIPLINARY AND GENERAL PHYSICS
Concurrent structural and mechanical characterization of forming colloidal film by ultrasound and light
Appl. Phys. Lett. 96, 174102 (2010)
https://doi.org/10.1063/1.3387814
Low-frequency ac electro-flow-focusing microfluidic emulsification
Appl. Phys. Lett. 96, 174103 (2010)
https://doi.org/10.1063/1.3424791
Strong size-dependent photoacoustic effect on gold nanoparticles by laser-induced nanobubbles
Appl. Phys. Lett. 96, 174104 (2010)
https://doi.org/10.1063/1.3387890
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer
Mritunjay Kumar, Vishal Khandelwal, et al.