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Issues
8 March 2010
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes
Hee Jin Kim; Suk Choi; Seong-Soo Kim; Jae-Hyun Ryou; P. Douglas Yoder; Russell D. Dupuis; Alec M. Fischer; Kewei Sun; Fernando A. Ponce
Appl. Phys. Lett. 96, 101102 (2010)
https://doi.org/10.1063/1.3353995
All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip
Appl. Phys. Lett. 96, 101103 (2010)
https://doi.org/10.1063/1.3357427
Uniform-field transverse electroreflectance using a mode-locked laser and a radio-frequency bias
Appl. Phys. Lett. 96, 101104 (2010)
https://doi.org/10.1063/1.3354078
An electrically injected quantum dot spin polarized single photon source
Appl. Phys. Lett. 96, 101105 (2010)
https://doi.org/10.1063/1.3357426
Phase-locked arrays of surface-emitting terahertz quantum-cascade lasers
Appl. Phys. Lett. 96, 101106 (2010)
https://doi.org/10.1063/1.3358134
High performance tunnel injection quantum dot comb laser
Appl. Phys. Lett. 96, 101107 (2010)
https://doi.org/10.1063/1.3358142
Dielectrophoretically tuneable optical waveguides using nanoparticles in microfluidics
Appl. Phys. Lett. 96, 101108 (2010)
https://doi.org/10.1063/1.3358384
Efficient low-power terahertz generation via on-chip triply-resonant nonlinear frequency mixing
Appl. Phys. Lett. 96, 101110 (2010)
https://doi.org/10.1063/1.3359429
High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes
Appl. Phys. Lett. 96, 101112 (2010)
https://doi.org/10.1063/1.3340945
Electronic and optical properties of CdZnO quantum well structures with electric field and polarization effects
Appl. Phys. Lett. 96, 101113 (2010)
https://doi.org/10.1063/1.3340946
Photogated transistor of III-nitride nanorods
Appl. Phys. Lett. 96, 101114 (2010)
https://doi.org/10.1063/1.3330876
Directional and controllable edge-emitting ZnO ultraviolet random laser diodes
Appl. Phys. Lett. 96, 101116 (2010)
https://doi.org/10.1063/1.3356221
Nanogap quantum dot photodetectors with high sensitivity and bandwidth
Appl. Phys. Lett. 96, 101118 (2010)
https://doi.org/10.1063/1.3356224
PLASMAS AND ELECTRICAL DISCHARGES
Plasma effects on subcellular structures
Appl. Phys. Lett. 96, 101501 (2010)
https://doi.org/10.1063/1.3352316
Strong drive compression of a gas-cooled positron plasma
Appl. Phys. Lett. 96, 101502 (2010)
https://doi.org/10.1063/1.3354005
Evolution of electron temperature in low pressure magnetized capacitive plasma
Appl. Phys. Lett. 96, 101504 (2010)
https://doi.org/10.1063/1.3309589
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
The transition from smooth modification to nanograting in fused silica
Appl. Phys. Lett. 96, 101903 (2010)
https://doi.org/10.1063/1.3358120
Limitations to band gap tuning in nitride semiconductor alloys
Appl. Phys. Lett. 96, 101907 (2010)
https://doi.org/10.1063/1.3357419
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
Effects of barrier layers on device performance of high mobility metal-oxide-semiconductor field-effect-transistors
Appl. Phys. Lett. 96, 102101 (2010)
https://doi.org/10.1063/1.3350893
AlGaN-based ultraviolet photodetector with micropillar structures
Appl. Phys. Lett. 96, 102104 (2010)
https://doi.org/10.1063/1.3354018
Single-electron pumping from a quantum dot into an electrode
Appl. Phys. Lett. 96, 102105 (2010)
https://doi.org/10.1063/1.3319497
Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors
Sang-Yun Sung; Jun Hyuk Choi; Un Bin Han; Ki Chang Lee; Joon-Hyung Lee; Jeong-Joo Kim; Wantae Lim; S. J. Pearton; D. P. Norton; Young-Woo Heo
Appl. Phys. Lett. 96, 102107 (2010)
https://doi.org/10.1063/1.3357431
Electronic structure and contact resistance at an open-end carbon nanotube and copper interface
Appl. Phys. Lett. 96, 102108 (2010)
https://doi.org/10.1063/1.3354077
Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates
J. H. Leach; M. Wu; X. Ni; X. Li; J. Xie; Ü. Özgür; H. Morkoç; T. Paskova; E. Preble; K. R. Evans; Chang-Zhi Lu
Appl. Phys. Lett. 96, 102109 (2010)
https://doi.org/10.1063/1.3358192
Low temperature germanium to silicon direct wafer bonding using free radical exposure
Appl. Phys. Lett. 96, 102110 (2010)
https://doi.org/10.1063/1.3360201
Low defect-mediated reverse-bias leakage in (0001) GaN via high-temperature molecular beam epitaxy
Appl. Phys. Lett. 96, 102111 (2010)
https://doi.org/10.1063/1.3360227
MAGNETISM AND SUPERCONDUCTIVITY
Grain--oriented anisotropy in the bonded giant magnetostrictive material
Appl. Phys. Lett. 96, 102501 (2010)
https://doi.org/10.1063/1.3350891
Temperature induced in-plane/out-of-plane magnetization transition in ferromagnetic thin films
Appl. Phys. Lett. 96, 102502 (2010)
https://doi.org/10.1063/1.3353997
Ferrimagnetism in zigzag graphene nanoribbons induced by main-group adatoms
Appl. Phys. Lett. 96, 102503 (2010)
https://doi.org/10.1063/1.3327884
Thin film dielectric microstrip kinetic inductance detectors
Benjamin A. Mazin; Daniel Sank; Sean McHugh; Erik A. Lucero; Andrew Merrill; Jiansong Gao; David Pappas; David Moore; Jonas Zmuidzinas
Appl. Phys. Lett. 96, 102504 (2010)
https://doi.org/10.1063/1.3314281
Heat assisted spin torque switching of quasistable nanomagnets across a vacuum gap
Appl. Phys. Lett. 96, 102505 (2010)
https://doi.org/10.1063/1.3354023
Readout for phase qubits without Josephson junctions
Matthias Steffen; Shwetank Kumar; David DiVincenzo; George Keefe; Mark Ketchen; Mary Beth Rothwell; Jim Rozen
Appl. Phys. Lett. 96, 102506 (2010)
https://doi.org/10.1063/1.3354089
Modification of magnetic properties through the control of growth orientation and epitaxial strain in thin films
Appl. Phys. Lett. 96, 102507 (2010)
https://doi.org/10.1063/1.3334727
Spin-torque driven magnetic vortex self-oscillations in perpendicular magnetic fields
Appl. Phys. Lett. 96, 102508 (2010)
https://doi.org/10.1063/1.3358387
Nonmagnetic Fe-site doping of multiferroic ceramics
Appl. Phys. Lett. 96, 102509 (2010)
https://doi.org/10.1063/1.3327885
Efficient spin injection into GaAs quantum well across spin filter
Appl. Phys. Lett. 96, 102510 (2010)
https://doi.org/10.1063/1.3357436
Thermomagnetically patterned micromagnets
F. Dumas-Bouchiat; L. F. Zanini; M. Kustov; N. M. Dempsey; R. Grechishkin; K. Hasselbach; J. C. Orlianges; C. Champeaux; A. Catherinot; D. Givord
Appl. Phys. Lett. 96, 102511 (2010)
https://doi.org/10.1063/1.3341190
in epitaxial thin films with biaxial compressive strain
E. Bellingeri; I. Pallecchi; R. Buzio; A. Gerbi; D. Marrè; M. R. Cimberle; M. Tropeano; M. Putti; A. Palenzona; C. Ferdeghini
Appl. Phys. Lett. 96, 102512 (2010)
https://doi.org/10.1063/1.3358148
Fabrication of bulk nanocomposite magnets via severe plastic deformation and warm compaction
Appl. Phys. Lett. 96, 102513 (2010)
https://doi.org/10.1063/1.3358390
DIELECTRICS AND FERROELECTRICITY
Strain relaxation in epitaxial thin films on substrates
Appl. Phys. Lett. 96, 102901 (2010)
https://doi.org/10.1063/1.3357435
Thermally mediated multiferroic composites for the magnetoelectric materials
S. G. Lu; Z. Fang; E. Furman; Y. Wang; Q. M. Zhang; Y. Mudryk; K. A. Gschneidner, Jr.; V. K. Pecharsky; C. W. Nan
Appl. Phys. Lett. 96, 102902 (2010)
https://doi.org/10.1063/1.3358133
Giant flexoelectricity in bent-core nematic liquid crystal elastomers
Appl. Phys. Lett. 96, 102907 (2010)
https://doi.org/10.1063/1.3358391
Effect of gate dielectrics on the device performance of nanowire field effect transistors
Appl. Phys. Lett. 96, 102908 (2010)
https://doi.org/10.1063/1.3357432
Pressure effects on multiferroic
Appl. Phys. Lett. 96, 102909 (2010)
https://doi.org/10.1063/1.3360211
Analysis of trap state densities at interfaces
Appl. Phys. Lett. 96, 102910 (2010)
https://doi.org/10.1063/1.3360221
NANOSCALE SCIENCE AND DESIGN
Effects of atomic-scale surface morphology on carbon nanotube alignment on thermally oxidized silicon surface
Appl. Phys. Lett. 96, 103102 (2010)
https://doi.org/10.1063/1.3354009
Correlating structural and resistive changes in Ti:NiO resistive memory elements
Appl. Phys. Lett. 96, 103103 (2010)
https://doi.org/10.1063/1.3355546
Microwave switching of graphene field effect transistor at and far from the Dirac point
Appl. Phys. Lett. 96, 103105 (2010)
https://doi.org/10.1063/1.3358124
Self-assembled nanoripples on Si(1 1 10) substrates
Appl. Phys. Lett. 96, 103107 (2010)
https://doi.org/10.1063/1.3358132
Quantum transport in graphene nanoribbons patterned by metal masks
Appl. Phys. Lett. 96, 103109 (2010)
https://doi.org/10.1063/1.3352559
Roles of lattice cooling on local heating in metal-molecule-metal junctions
Appl. Phys. Lett. 96, 103110 (2010)
https://doi.org/10.1063/1.3353969
Experimental evidence of enhanced electro-optic control on a lithium niobate photonic crystal superprism
Appl. Phys. Lett. 96, 103111 (2010)
https://doi.org/10.1063/1.3359421
Codoping of magnesium with oxygen in gallium nitride nanowires
Appl. Phys. Lett. 96, 103112 (2010)
https://doi.org/10.1063/1.3318462
Raman scattering from surface optical phonon in diameter modulated AlN nanotips
Appl. Phys. Lett. 96, 103113 (2010)
https://doi.org/10.1063/1.3337112
Metal ion-doped ordered porous films and their strong gas sensing selectivity
Appl. Phys. Lett. 96, 103115 (2010)
https://doi.org/10.1063/1.3358389
Design constraints and guidelines for CdS/CdTe nanopillar based photovoltaics
Appl. Phys. Lett. 96, 103116 (2010)
https://doi.org/10.1063/1.3340938
A photoresponsive single electron transistor prepared from oligothiophene molecules and gold nanoparticles in a nanogap electrode
Hidehiro Yamaguchi; Toshifumi Terui; Yutaka Noguchi; Rieko Ueda; Keiro Nasu; Akira Otomo; Kenji Matsuda
Appl. Phys. Lett. 96, 103117 (2010)
https://doi.org/10.1063/1.3359424
Chiral angle dependence of resonance window widths in families of single-walled carbon nanotubes
Ya-Ping Hsieh; Mario Hofmann; Hootan Farhat; Eduardo B. Barros; Martin Kalbac; Jing Kong; Chi-Te Liang; Yang-Fang Chen; Mildred S. Dresselhaus
Appl. Phys. Lett. 96, 103118 (2010)
https://doi.org/10.1063/1.3359427
Calculating Kelvin force microscopy signals from static force fields
Appl. Phys. Lett. 96, 103119 (2010)
https://doi.org/10.1063/1.3323098
ORGANIC ELECTRONICS AND PHOTONICS
Enhanced charge collection via nanoporous morphology in polymer solar cells
Appl. Phys. Lett. 96, 103304 (2010)
https://doi.org/10.1063/1.3359425
Anomalous current transients in organic field-effect transistors
Appl. Phys. Lett. 96, 103306 (2010)
https://doi.org/10.1063/1.3339879
High-mobility bio-organic field effect transistors with photoreactive DNAs as gate insulators
Appl. Phys. Lett. 96, 103307 (2010)
https://doi.org/10.1063/1.3299022
DEVICE PHYSICS
Electrical characterization of devices based on carbon nanotube films
Appl. Phys. Lett. 96, 103501 (2010)
https://doi.org/10.1063/1.3350892
Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in gate stacks
C. L. Hinkle; R. V. Galatage; R. A. Chapman; E. M. Vogel; H. N. Alshareef; C. Freeman; E. Wimmer; H. Niimi; A. Li-Fatou; J. B. Shaw; J. J. Chambers
Appl. Phys. Lett. 96, 103502 (2010)
https://doi.org/10.1063/1.3353993
Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis
Appl. Phys. Lett. 96, 103504 (2010)
https://doi.org/10.1063/1.3330870
Critical oxygen concentration in hydrogenated amorphous silicon solar cells dependent on the contamination source
Appl. Phys. Lett. 96, 103505 (2010)
https://doi.org/10.1063/1.3357424
Fluorinated gate dielectric engineering on metal-oxide-semiconductor field-effect-transistors
Appl. Phys. Lett. 96, 103506 (2010)
https://doi.org/10.1063/1.3357434
Amplified spontaneous emission in the cyano-substituted oligo(p-phenylenevinylene) organic crystals: Effect of excitation wavelength
Hong-Hua Fang; Qi-Dai Chen; Jie Yang; Lei Wang; Ying Jiang; Hong Xia; Jing Feng; Yu-Guang Ma; Hai-Yu Wang; Hong-Bo Sun
Appl. Phys. Lett. 96, 103508 (2010)
https://doi.org/10.1063/1.3359848
INTERDISCIPLINARY AND GENERAL PHYSICS
Morphology and bonding states of chemical vapor deposition diamond films nucleation surface
Appl. Phys. Lett. 96, 104101 (2010)
https://doi.org/10.1063/1.3352108
An efficient, low profile, electrically small, three-dimensional, very high frequency magnetic EZ antenna
Appl. Phys. Lett. 96, 104102 (2010)
https://doi.org/10.1063/1.3357430
Bidirectional electrowetting actuation with voltage polarity dependence
Appl. Phys. Lett. 96, 104103 (2010)
https://doi.org/10.1063/1.3353990
Analysis of the power dependent tuning of a varactor-loaded metamaterial at microwave frequencies
Appl. Phys. Lett. 96, 104104 (2010)
https://doi.org/10.1063/1.3356223
Rotary motion driven by a direct current electric field
Appl. Phys. Lett. 96, 104105 (2010)
https://doi.org/10.1063/1.3358385
Pulse formation in nonlinear left-handed transmission line media
Appl. Phys. Lett. 96, 104106 (2010)
https://doi.org/10.1063/1.3355548
ERRATA
3.3 kV-class NiO/β-Ga2O3 heterojunction diode and its off-state leakage mechanism
Jiangbin Wan, Hengyu Wang, et al.
Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K
Jie Zhou, Daniel Vincent, et al.
Phonon thermal transport in two-dimensional gallium nitride: Role of higher-order phonon–phonon and phonon–electron scattering
Jianshi Sun, Xiangjun Liu, et al.