Skip Nav Destination
Issues
21 December 2009
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
Enhanced photoluminescence of strained Ge with a -doping SiGe layer on silicon and silicon-on-insulator
Appl. Phys. Lett. 95, 251102 (2009)
https://doi.org/10.1063/1.3275863
Emission wavelength tuning of interband cascade lasers in the spectral range
A. Bauer; F. Langer; M. Dallner; M. Kamp; M. Motyka; G. Sęk; K. Ryczko; J. Misiewicz; S. Höfling; A. Forchel
Appl. Phys. Lett. 95, 251103 (2009)
https://doi.org/10.1063/1.3270002
Ultrafast carrier capture in InGaAs quantum posts
D. Stehr; C. M. Morris; D. Talbayev; M. Wagner; H. C. Kim; A. J. Taylor; H. Schneider; P. M. Petroff; M. S. Sherwin
Appl. Phys. Lett. 95, 251105 (2009)
https://doi.org/10.1063/1.3275666
Terahertz metamaterials fabricated by inkjet printing
Appl. Phys. Lett. 95, 251107 (2009)
https://doi.org/10.1063/1.3276544
Hybrid states of Tamm plasmons and exciton polaritons
Appl. Phys. Lett. 95, 251108 (2009)
https://doi.org/10.1063/1.3266841
Ultrahigh contrast light valve driven by electrocapillarity of liquid gallium
Appl. Phys. Lett. 95, 251110 (2009)
https://doi.org/10.1063/1.3278441
Two-color quantum dot laser with tunable wavelength gap
Appl. Phys. Lett. 95, 251111 (2009)
https://doi.org/10.1063/1.3278594
PLASMAS AND ELECTRICAL DISCHARGES
Plume composition control in double pulse ultrafast laser ablation of metals
Appl. Phys. Lett. 95, 251501 (2009)
https://doi.org/10.1063/1.3276690
Magnetohydrodynamic energy conversion by using convexly divergent channel
Appl. Phys. Lett. 95, 251502 (2009)
https://doi.org/10.1063/1.3272014
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
On the symmetry of the morphotropic phase boundary in ferroelectric system
Appl. Phys. Lett. 95, 251901 (2009)
https://doi.org/10.1063/1.3268478
Altering the nucleation of thermally annealed hydrogenated amorphous silicon with laser processing
Appl. Phys. Lett. 95, 251902 (2009)
https://doi.org/10.1063/1.3259654
Tactile objects based on an amplitude disturbed diffraction pattern method
Appl. Phys. Lett. 95, 251904 (2009)
https://doi.org/10.1063/1.3276549
Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar GaN free standing substrates
Anurag Tyagi; Feng Wu; Erin C. Young; Arpan Chakraborty; Hiroaki Ohta; Rajaram Bhat; Kenji Fujito; Steven P. DenBaars; Shuji Nakamura; James S. Speck
Appl. Phys. Lett. 95, 251905 (2009)
https://doi.org/10.1063/1.3275717
Atomic structure evolution in bulk metallic glass under compressive stress
Appl. Phys. Lett. 95, 251906 (2009)
https://doi.org/10.1063/1.3276274
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
Characteristics of surface states and charge neutrality level in Ge
Appl. Phys. Lett. 95, 252101 (2009)
https://doi.org/10.1063/1.3270529
Enhancement of electroluminescence from heterostructure-based devices through engineering of oxygen vacancies in
Appl. Phys. Lett. 95, 252102 (2009)
https://doi.org/10.1063/1.3276547
Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors
Chang-Jung Kim; Sangwook Kim; Je-Hun Lee; Jin-Seong Park; Sunil Kim; Jaechul Park; Eunha Lee; Jaechul Lee; Youngsoo Park; Joo Han Kim; Sung Tae Shin; U-In Chung
Appl. Phys. Lett. 95, 252103 (2009)
https://doi.org/10.1063/1.3275801
Why nitrogen cannot lead to -type conductivity in ZnO
Appl. Phys. Lett. 95, 252105 (2009)
https://doi.org/10.1063/1.3274043
-type conduction in beryllium-implanted hexagonal boron nitride films
B. He; W. J. Zhang; Z. Q. Yao; Y. M. Chong; Y. Yang; Q. Ye; X. J. Pan; J. A. Zapien; I. Bello; S. T. Lee; I. Gerhards; H. Zutz; H. Hofsäss
Appl. Phys. Lett. 95, 252106 (2009)
https://doi.org/10.1063/1.3276065
Millisecond flash lamp annealing of shallow implanted layers in Ge
C. Wündisch; M. Posselt; B. Schmidt; V. Heera; T. Schumann; A. Mücklich; R. Grötzschel; W. Skorupa; T. Clarysse; E. Simoen; H. Hortenbach
Appl. Phys. Lett. 95, 252107 (2009)
https://doi.org/10.1063/1.3276770
Enhanced shot noise in carbon nanotube field-effect transistors
Appl. Phys. Lett. 95, 252108 (2009)
https://doi.org/10.1063/1.3274128
Polarity-dependent resistance switching in GeSbTe phase-change thin films: The importance of excess Sb in filament formation
Ramanathaswamy Pandian; Bart J. Kooi; Jasper L. M. Oosthoek; Pim van den Dool; George Palasantzas; Andrew Pauza
Appl. Phys. Lett. 95, 252109 (2009)
https://doi.org/10.1063/1.3276272
MAGNETISM AND SUPERCONDUCTIVITY
The influence of the antiferromagnetic boundary on the magnetic property of
Appl. Phys. Lett. 95, 252502 (2009)
https://doi.org/10.1063/1.3267053
Reducing extrinsic hysteresis in first-order magnetocaloric systems
Appl. Phys. Lett. 95, 252504 (2009)
https://doi.org/10.1063/1.3276565
The radio-frequency impedance of individual intrinsic Josephson junctions
Appl. Phys. Lett. 95, 252505 (2009)
https://doi.org/10.1063/1.3275741
Si segregation in polycrystalline films with grain-size control
Appl. Phys. Lett. 95, 252506 (2009)
https://doi.org/10.1063/1.3276073
DIELECTRICS AND FERROELECTRICITY
Photoinduced change of dielectric permittivity in molecular doped polymer layer
Appl. Phys. Lett. 95, 252901 (2009)
https://doi.org/10.1063/1.3275800
Ferroelectricity in glycine picrate: An astonishing observation in a centrosymmetric crystal
Appl. Phys. Lett. 95, 252902 (2009)
https://doi.org/10.1063/1.3275714
Evidences for the depletion region induced by the polarization of ferroelectric semiconductors
Appl. Phys. Lett. 95, 252904 (2009)
https://doi.org/10.1063/1.3268783
NANOSCALE SCIENCE AND DESIGN
A compact, high power, ultrafast laser mode-locked by carbon nanotubes
Appl. Phys. Lett. 95, 253102 (2009)
https://doi.org/10.1063/1.3275866
Thermophoretically driven carbon nanotube oscillators
Appl. Phys. Lett. 95, 253103 (2009)
https://doi.org/10.1063/1.3276546
Nuclear magnetic resonance-based study of ordered layering on the surface of alumina nanoparticles in water
Appl. Phys. Lett. 95, 253104 (2009)
https://doi.org/10.1063/1.3276551
An energetic stability predictor of hydrogen-terminated Si nanostructures
Appl. Phys. Lett. 95, 253106 (2009)
https://doi.org/10.1063/1.3276554
Crossbar heterojunction field effect transistors of CdSe:In nanowires and Si nanoribbons
Z. B. He; W. J. Zhang; Y. B. Tang; H. B. Wang; Y. L. Cao; H. S. Song; I. Bello; C. S. Lee; S. T. Lee
Appl. Phys. Lett. 95, 253107 (2009)
https://doi.org/10.1063/1.3275715
Mid-IR plasmonic antennas on silicon-rich oxinitride absorbing substrates: Nonlinear scaling of resonance wavelengths with antenna length
T. Šikola; R. D. Kekatpure; E. S. Barnard; J. S. White; P. Van Dorpe; L. Břínek; O. Tomanec; J. Zlámal; D. Y. Lei; Y. Sonnefraud; S. A. Maier; J. Humlíček; M. L. Brongersma
Appl. Phys. Lett. 95, 253109 (2009)
https://doi.org/10.1063/1.3278593
Self-ordering mechanism of nanocluster-chain on the functional vicinal surfaces
Appl. Phys. Lett. 95, 253110 (2009)
https://doi.org/10.1063/1.3276067
ORGANIC ELECTRONICS AND PHOTONICS
Chemically modified ink-jet printed silver electrodes for organic field-effect transistors
Appl. Phys. Lett. 95, 253302 (2009)
https://doi.org/10.1063/1.3276913
Hybrid junction light-emitting diodes based on sputtered ZnO and organic semiconductors
Appl. Phys. Lett. 95, 253303 (2009)
https://doi.org/10.1063/1.3275802
Improved performance of blue phosphorescent organic light-emitting diodes with a mixed host system
Appl. Phys. Lett. 95, 253304 (2009)
https://doi.org/10.1063/1.3276075
Proton migration mechanism for the instability of organic field-effect transistors
Appl. Phys. Lett. 95, 253305 (2009)
https://doi.org/10.1063/1.3275807
Low voltage active pressure sensor based on polymer space-charge-limited transistor
Appl. Phys. Lett. 95, 253306 (2009)
https://doi.org/10.1063/1.3266847
High-resolution transparent carbon electrodes for organic field-effect transistors patterned by laser sintering
Appl. Phys. Lett. 95, 253307 (2009)
https://doi.org/10.1063/1.3276771
Double wavelength ultraviolet light sensitive organic photodetector
Fei Yan; Huihui Liu; Wenlian Li; Bei Chu; Zisheng Su; Guang Zhang; Yiren Chen; Jianzhuo Zhu; Dongfang Yang; Junbo Wang
Appl. Phys. Lett. 95, 253308 (2009)
https://doi.org/10.1063/1.3266861
DEVICE PHYSICS
A theoretical study of the initial oxidation of the surface
Appl. Phys. Lett. 95, 253504 (2009)
https://doi.org/10.1063/1.3275737
BIOPHYSICS AND BIO-INSPIRED SYSTEMS
Quasistatic force and torque on a spherical particle under generalized dielectrophoresis in the vicinity of walls
Appl. Phys. Lett. 95, 253701 (2009)
https://doi.org/10.1063/1.3277157
Bioactive “self-sensing” optical systems
Appl. Phys. Lett. 95, 253702 (2009)
https://doi.org/10.1063/1.3275719
DNA-psoralen: Single-molecule experiments and first principles calculations
Appl. Phys. Lett. 95, 253703 (2009)
https://doi.org/10.1063/1.3276555
INTERDISCIPLINARY AND GENERAL PHYSICS
Localization of a breathing crack using nonlinear subharmonic response signals
Appl. Phys. Lett. 95, 254101 (2009)
https://doi.org/10.1063/1.3275705
To grate a liquid into tiny droplets by its impact on a hydrophobic microgrid
Appl. Phys. Lett. 95, 254102 (2009)
https://doi.org/10.1063/1.3275709
Integrated acoustic and magnetic separation in microfluidic channels
Appl. Phys. Lett. 95, 254103 (2009)
https://doi.org/10.1063/1.3275577
ERRATA
Erratum: Counting graphene layers on glass via optical reflection microscopy [Appl. Phys. Lett. 94, 143101 (2009)]
Appl. Phys. Lett. 95, 259901 (2009)
https://doi.org/10.1063/1.3271685
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Feedback cooling of an insulating high-Q diamagnetically levitated plate
S. Tian, K. Jadeja, et al.
Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices
Joachim Würfl, Tomás Palacios, et al.