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LASERS, OPTICS, AND OPTOELECTRONICS

Stimulated emission of near-infrared radiation by current injection into silicon (100) quantum well

S. Saito; Y. Suwa; H. Arimoto; N. Sakuma; D. Hisamoto; H. Uchiyama; J. Yamamoto; T. Sakamizu; T. Mine; S. Kimura; T. Sugawara; M. Aoki

Appl. Phys. Lett. 95, 241101 (2009) https://doi.org/10.1063/1.3273367

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Fabrication of high efficiency III-V quantum nanostructures at low thermal budget on Si

S. Bietti; C. Somaschini; S. Sanguinetti; N. Koguchi; G. Isella; D. Chrastina

Appl. Phys. Lett. 95, 241102 (2009) https://doi.org/10.1063/1.3273860

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Thermal emission from finite photonic crystals

Christian J. Schuler; Christian Wolff; Kurt Busch; Marian Florescu

Appl. Phys. Lett. 95, 241103 (2009) https://doi.org/10.1063/1.3275578

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Spin-dependent photoconductivity in nonmagnetic semiconductors at room temperature

F. Zhao; A. Balocchi; A. Kunold; J. Carrey; H. Carrère; T. Amand; N. Ben Abdallah; J. C. Harmand; X. Marie

Appl. Phys. Lett. 95, 241104 (2009) https://doi.org/10.1063/1.3273393

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Subwavelength direct laser writing by strong optical nonlinear absorption and melt-ablation threshold characteristics

Jingsong Wei; Jing Liu; Xinbing Jiao

Appl. Phys. Lett. 95, 241105 (2009) https://doi.org/10.1063/1.3272011

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Photocurrent in Ag–Si photodiodes modulated by plasmonic nanopatterns

Yumin Wang; Xiaodong Su; Yongyuan Zhu; Qianjin Wang; Dongliang Zhu; Junwei Zhao; San Chen; Wanxia Huang; Shan Wu

Appl. Phys. Lett. 95, 241106 (2009) https://doi.org/10.1063/1.3275708

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Mid-infrared PbTe vertical external cavity surface emitting laser on Si-substrate with above 1 W output power

M. Rahim; M. Fill; F. Felder; D. Chappuis; M. Corda; H. Zogg

Appl. Phys. Lett. 95, 241107 (2009) https://doi.org/10.1063/1.3275792

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Reconfigurable liquid crystal droplets using a dielectric force

Hongwen Ren; Seung Hee Lee; Shin Tson Wu

Appl. Phys. Lett. 95, 241108 (2009) https://doi.org/10.1063/1.3275795

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Improved performance of GaN-based blue light emitting diodes with InGaN/GaN multilayer barriers

Hun Jae Chung; Rak Jun Choi; Min Ho Kim; Jae Woong Han; Young Min Park; Yu Seung Kim; Ho Sun Paek; Cheol Soo Sone; Yong Jo Park; Jong Kyu Kim; E. Fred Schubert

Appl. Phys. Lett. 95, 241109 (2009) https://doi.org/10.1063/1.3276066

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Whispering gallery-mode lasing in ZnO microrods at room temperature

J. Dai; C. X. XU; K. Zheng; C. G. Lv; Y. P. Cui

Appl. Phys. Lett. 95, 241110 (2009) https://doi.org/10.1063/1.3276069

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Dual band terahertz metamaterial absorber: Design, fabrication, and characterization

Qi-Ye Wen; Huai-Wu Zhang; Yun-Song Xie; Qing-Hui Yang; Ying-Li Liu

Appl. Phys. Lett. 95, 241111 (2009) https://doi.org/10.1063/1.3276072

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

The effect of hydrogen charging on Ln-based amorphous materials

C. P. Chuang; J. H. Huang; W. Dmowski; P. K. Liaw; R. Li; T. Zhang; Y. Ren

Appl. Phys. Lett. 95, 241901 (2009) https://doi.org/10.1063/1.3266521

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Liquid ${Ge}_{2} {Sb}_{2} {Te}_{5}$ studied by extended x-ray absorption

A. V. Kolobov; P. Fons; M. Krbal; R. E. Simpson; S. Hosokawa; T. Uruga; H. Tanida; J. Tominaga

Appl. Phys. Lett. 95, 241902 (2009) https://doi.org/10.1063/1.3272680

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Comprehensive doping and temperature studies of spin relaxation in InSb

D. Guzun; E. A. DeCuir, Jr.; Vas. P. Kunets; Yu. I. Mazur; G. J. Salamo; S. Q. Murphy; P. A. R. Dilhani Jayathilaka; T. D. Mishima; M. B. Santos

Appl. Phys. Lett. 95, 241903 (2009) https://doi.org/10.1063/1.3274040

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Dominant recombination centers in Ga(In)NAs alloys: Ga interstitials

X. J. Wang; Y. Puttisong; C. W. Tu; Aaron J. Ptak; V. K. Kalevich; A. Yu. Egorov; L. Geelhaar; H. Riechert; W. M. Chen; I. A. Buyanova

Appl. Phys. Lett. 95, 241904 (2009) https://doi.org/10.1063/1.3275703

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Effect of annealing on atomic ordering of amorphous ZrTaTiNbSi alloy

Tsung-Han Yang; Rong-Tang Huang; Cheng-An Wu; Fu-Rong Chen; Jon-Yiew Gan; Jien-Wei Yeh; Jagdish Narayan

Appl. Phys. Lett. 95, 241905 (2009) https://doi.org/10.1063/1.3273387

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Photoluminescence induced by thermal annealing in ${SrTiO}_{3}$ thin film

JaeHoon Rho; SeungHun Jang; Young Dong Ko; SeungJin Kang; Dong-Wook Kim; J.-S. Chung; Miyoung Kim; Moonsup Han; Eunjip Choi

Appl. Phys. Lett. 95, 241906 (2009) https://doi.org/10.1063/1.3275707

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MnSe phase segregation during heteroepitaxy of Mn doped ${Ga}_{2} {Se}_{3}$ on Si(001)

T. C. Lovejoy; E. N. Yitamben; S. M. Heald; F. S. Ohuchi; M. A. Olmstead

Appl. Phys. Lett. 95, 241907 (2009) https://doi.org/10.1063/1.3273858

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Hole-electron electrical coupling in photorefractive materials

Ivan de Oliveira; Renata Montenegro; Jaime Frejlich

Appl. Phys. Lett. 95, 241908 (2009) https://doi.org/10.1063/1.3272681

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Observation of hypersonic phononic crystal effects in porous silicon superlattices

L. C. Parsons; G. T. Andrews

Appl. Phys. Lett. 95, 241909 (2009) https://doi.org/10.1063/1.3275742

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Effects of nanowire coalescence on their structural and optical properties on a local scale

V. Consonni; M. Knelangen; U. Jahn; A. Trampert; L. Geelhaar; H. Riechert

Appl. Phys. Lett. 95, 241910 (2009) https://doi.org/10.1063/1.3275793

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High pressure phase transformation in iron under fast compression

Marina Bastea; Sorin Bastea; Richard Becker

Appl. Phys. Lett. 95, 241911 (2009) https://doi.org/10.1063/1.3275797

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Metal organic vapor phase epitaxy growth of single crystalline GaN on planar Si(211) substrates

Roghaiyeh Ravash; Jürgen Bläsing; Thomas Hempel; Martin Noltemeyer; Armin Dadgar; Jürgen Christen; Alois Krost

Appl. Phys. Lett. 95, 242101 (2009) https://doi.org/10.1063/1.3272673

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Observation of the single-electron regime in a highly tunable silicon quantum dot

W. H. Lim; F. A. Zwanenburg; H. Huebl; M. Möttönen; K. W. Chan; A. Morello; A. S. Dzurak

Appl. Phys. Lett. 95, 242102 (2009) https://doi.org/10.1063/1.3272858

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Study of temporal current stability and fluctuations of field emitted electrons from ZnO nanostructure films

Kishore Uppireddi; Boqian Yang; Peter Xian Feng; Gerardo Morell

Appl. Phys. Lett. 95, 242103 (2009) https://doi.org/10.1063/1.3273383

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Graphene field effect transistors with parylene gate dielectric

S. S. Sabri; P. L. Lévesque; C. M. Aguirre; J. Guillemette; R. Martel; T. Szkopek

Appl. Phys. Lett. 95, 242104 (2009) https://doi.org/10.1063/1.3273396

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Selenium and tellurium: Elemental catalysts for conversion of graphite to diamond under high pressure and temperature

S. J. Lv; S. M. Hong; C. S. Yuan; Y. Hu

Appl. Phys. Lett. 95, 242105 (2009) https://doi.org/10.1063/1.3273855

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Monte Carlo simulation of the percolation in ${Ag}_{30} {Ge}_{17} {Se}_{53}$ amorphous electrolyte films

L. Chen; Q. C. Li; H. X. Guo; L. G. Gao; Y. D. Xia; J. Yin; Z. G. Liu

Appl. Phys. Lett. 95, 242106 (2009) https://doi.org/10.1063/1.3275701

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Compact silicon double and triple dots realized with only two gates

M. Pierre; R. Wacquez; B. Roche; X. Jehl; M. Sanquer; M. Vinet; E. Prati; M. Belli; M. Fanciulli

Appl. Phys. Lett. 95, 242107 (2009) https://doi.org/10.1063/1.3273857

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Zero field spin splitting in AlSb/InAs/AlSb quantum wells induced by surface proximity effects

Masaya Nishioka; Bruce A. Gurney; Ernesto E. Marinero; Francisco Mireles

Appl. Phys. Lett. 95, 242108 (2009) https://doi.org/10.1063/1.3274129

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Si Esaki diodes with high peak to valley current ratios

M. Oehme; D. Hähnel; J. Werner; M. Kaschel; O. Kirfel; E. Kasper; J. Schulze

Appl. Phys. Lett. 95, 242109 (2009) https://doi.org/10.1063/1.3274136

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Excess carrier recombination lifetime of bulk $n$ -type 3C-SiC

Vytautas Grivickas; Georgios Manolis; Karolis Gulbinas; Kęstutis Jarašiūnas; Masashi Kato

Appl. Phys. Lett. 95, 242110 (2009) https://doi.org/10.1063/1.3273382

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Interaction between Na and Li in ZnO

Pekka T. Neuvonen; Lasse Vines; Andrej Yu. Kuznetsov; Bengt G. Svensson; Xiaolong Du; Filip Tuomisto; Anders Hallén

Appl. Phys. Lett. 95, 242111 (2009) https://doi.org/10.1063/1.3270107

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Advanced impurity trap memory with atomic-scale Ti impurities on ${LaAlO}_{3}$ ⁠: Evidence for the origins of enhanced memory performance

Seungjae Jung; Hyejung Choi; Yongkyu Ju; Man Chang; Minseok Jo; Joonmyoung Lee; Jaesik Yoon; Choongman Lee; Hyunsang Hwang

Appl. Phys. Lett. 95, 242112 (2009) https://doi.org/10.1063/1.3270528

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Nonlinear current-voltage behavior and giant positive magnetoresistance in nonmagnetic Au/Yttria-stabilized zirconia/Si heterostructures

T. L. Qu; J. Li; Y. G. Zhao; J. W. Mei; X. Liu; H. F. Tian; J. P. Shi; S. M. Guo; J. Li; D. N. Zheng; J. Q. Li

Appl. Phys. Lett. 95, 242113 (2009) https://doi.org/10.1063/1.3274130

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Hole-based memory operation in an InAs/GaAs quantum dot heterostructure

A. Marent; T. Nowozin; J. Gelze; F. Luckert; D. Bimberg

Appl. Phys. Lett. 95, 242114 (2009) https://doi.org/10.1063/1.3275758

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MAGNETISM AND SUPERCONDUCTIVITY

In-situ characterization of rapid crystallization of amorphous CoFeB electrodes in CoFeB/MgO/CoFeB junctions during thermal annealing

W. G. Wang; J. Jordan-sweet; G. X. Miao; C. Ni; A. K. Rumaiz; L. R. Shah; X. Fan; P. Parsons; R. Stearrett; E. R. Nowak; J. S. Moodera; J. Q. Xiao

Appl. Phys. Lett. 95, 242501 (2009) https://doi.org/10.1063/1.3273397

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Magnetization reorientation in antiferromagnetically coupled Co films and (Co/Pd) multilayers

Rachid Sbiaa; S. N. Piramanayagam; Randall Law

Appl. Phys. Lett. 95, 242502 (2009) https://doi.org/10.1063/1.3273856

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GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier

Shinobu Ohya; Iriya Muneta; Pham Nam Hai; Masaaki Tanaka

Appl. Phys. Lett. 95, 242503 (2009) https://doi.org/10.1063/1.3254218

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Thermal stability and spin-transfer switchings in MgO-based magnetic tunnel junctions with ferromagnetically and antiferromagnetically coupled synthetic free layers

Satoshi Yakata; Hitoshi Kubota; Toru Sugano; Takayuki Seki; Kay Yakushiji; Akio Fukushima; Shinji Yuasa; Koji Ando

Appl. Phys. Lett. 95, 242504 (2009) https://doi.org/10.1063/1.3275753

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Magnetic properties and atomic structure of ${La}_{2 / 3} {Ca}_{1 / 3} {MnO}_{3} - {YBa}_{2} {Cu}_{3} O_{7}$ heterointerfaces

Z. L. Zhang; U. Kaiser; S. Soltan; H.-U. Habermeier; B. Keimer

Appl. Phys. Lett. 95, 242505 (2009) https://doi.org/10.1063/1.3274044

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DIELECTRICS AND FERROELECTRICITY

Ferroelectric polymer/silver nanocomposites with high dielectric constant and high thermal conductivity

Xingyi Huang; Pingkai Jiang; Liyuan Xie

Appl. Phys. Lett. 95, 242901 (2009) https://doi.org/10.1063/1.3273368

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Polarization switching characteristics of ${BiFeO}_{3}$ thin films epitaxially grown on Pt/MgO at a low temperature

Sangwoo Ryu; Jong Yeog Son; Young-Han Shin; Hyun M. Jang; James F. Scott

Appl. Phys. Lett. 95, 242902 (2009) https://doi.org/10.1063/1.3275012

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Predicted cooling powers for multilayer capacitors based on various electrocaloric and electrode materials

S. Kar-Narayan; N. D. Mathur

Appl. Phys. Lett. 95, 242903 (2009) https://doi.org/10.1063/1.3275013

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Ferroelectricity triggered in the quantum paraelectric ${AgTaO}_{3}$ by Li-substitution

Hwee Ping Soon; Hiroki Taniguchi; Mitsuru Itoh

Appl. Phys. Lett. 95, 242904 (2009) https://doi.org/10.1063/1.3275750

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Nanoparticle surface modification induced space charge suppression in linear low density polyethylene

Xingyi Huang; Pingkai Jiang; Yi Yin

Appl. Phys. Lett. 95, 242905 (2009) https://doi.org/10.1063/1.3275732

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Surface acoustic wave propagation properties in $0.67 Pb ({Mg}_{1 / 3} {Nb}_{2 / 3}) O_{3} - 0.33 {PbTiO}_{3}$ single crystal poled along ${[111]}_{c}$

Xiuming Li; Rui Zhang; Naixing Huang; Tianquan Lü; Wenwu Cao

Appl. Phys. Lett. 95, 242906 (2009) https://doi.org/10.1063/1.3271775

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NANOSCALE SCIENCE AND DESIGN

Depth resolved luminescence from oriented ZnO nanowires

R. A. Rosenberg; M. Abu Haija; K. Vijayalakshmi; J. Zhou; S. Xu; Z. L. Wang

Appl. Phys. Lett. 95, 243101 (2009) https://doi.org/10.1063/1.3275000

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Self-organized quantum dot arrays: Kinetic mapping of adatom capture

I. Levchenko; K. Ostrikov

Appl. Phys. Lett. 95, 243102 (2009) https://doi.org/10.1063/1.3273369

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Inducing chalcogenide phase change with ultra-narrow carbon nanotube heaters

Feng Xiong; Albert Liao; Eric Pop

Appl. Phys. Lett. 95, 243103 (2009) https://doi.org/10.1063/1.3273370

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Time dependent thermoelectric performance of a bundle of silicon nanowires for on-chip cooler applications

Gang Zhang; Qing-Xin Zhang; Devi Kavitha; Guo-Qiang Lo

Appl. Phys. Lett. 95, 243104 (2009) https://doi.org/10.1063/1.3273869

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Influence of metal work function on the position of the Dirac point of graphene field-effect transistors

Noejung Park; Bum-Kyu Kim; Jeong-O Lee; Ju-Jin Kim

Appl. Phys. Lett. 95, 243105 (2009) https://doi.org/10.1063/1.3274039

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Site-controlled InAs quantum dots grown on a 55 nm thick GaAs buffer layer

T. J. Pfau; A. Gushterov; J. P. Reithmaier; I. Cestier; G. Eisenstein; E. Linder; D. Gershoni

Appl. Phys. Lett. 95, 243106 (2009) https://doi.org/10.1063/1.3265918

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Independent tuning of quantum dots in a photonic crystal cavity

Hyochul Kim; Susanna M. Thon; Pierre M. Petroff; Dirk Bouwmeester

Appl. Phys. Lett. 95, 243107 (2009) https://doi.org/10.1063/1.3275002

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Strong size-dependent characteristics of carrier injection in quantum-confined silicon nanocrystals

Chang-Hee Cho; Sang-Kyun Kim; Baek-Hyun Kim; Seong-Ju Park

Appl. Phys. Lett. 95, 243108 (2009) https://doi.org/10.1063/1.3273861

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Carbon nanofiber supercapacitors with large areal capacitances

James R. McDonough; Jang Wook Choi; Yuan Yang; Fabio La Mantia; Yuegang Zhang; Yi Cui

Appl. Phys. Lett. 95, 243109 (2009) https://doi.org/10.1063/1.3273864

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Ab initio study of noncovalent sidewall functionalization of carbon nanotubes

Seokho Lim; Noejung Park

Appl. Phys. Lett. 95, 243110 (2009) https://doi.org/10.1063/1.3274041

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Chemical composition anomalies of nanotubes stretched from Au-Si(Ge) liquid alloy by an intense electric field

P. Joyes; J. Van de Walle; R.-J. Tarento

Appl. Phys. Lett. 95, 243111 (2009) https://doi.org/10.1063/1.3275011

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Gas sensing properties of single crystalline porous silicon nanowires

Kui-Qing Peng; Xin Wang; Shuit-Tong Lee

Appl. Phys. Lett. 95, 243112 (2009) https://doi.org/10.1063/1.3275794

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Design guidelines of periodic Si nanowire arrays for solar cell application

Junshuai Li; HongYu Yu; She Mein Wong; Xiaocheng Li; Gang Zhang; Patrick Guo-Qiang Lo; Dim-Lee Kwong

Appl. Phys. Lett. 95, 243113 (2009) https://doi.org/10.1063/1.3275798

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Coherent electronic grating cavity modes in corrugated ultrathin metal films

Y. Liu; T. Miller; T.-C. Chiang

Appl. Phys. Lett. 95, 243114 (2009) https://doi.org/10.1063/1.3275865

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ORGANIC ELECTRONICS AND PHOTONICS

Compact polarization-insensitive biopolymer multimode interference waveguide splitter

J. Zhou; Z. Y. Wang; E. Y. B. Pun

Appl. Phys. Lett. 95, 243301 (2009) https://doi.org/10.1063/1.3271680

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Low-voltage high-performance organic thin film transistors with a thermally annealed polystyrene/hafnium oxide dielectric

Ying Wang; Orb Acton; Guy Ting; Tobias Weidner; Hong Ma; David G. Castner; Alex K.-Y. Jen

Appl. Phys. Lett. 95, 243302 (2009) https://doi.org/10.1063/1.3268455

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Enhancement of electron transport by horizontal molecular orientation of oxadiazole planar molecules in organic amorphous films

Daisuke Yokoyama; Akio Sakaguchi; Michio Suzuki; Chihaya Adachi

Appl. Phys. Lett. 95, 243303 (2009) https://doi.org/10.1063/1.3274135

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Molecular structure and carrier distributions at semiconductor/dielectric interfaces in organic field-effect transistors studied with sum frequency generation microscopy

Ikuyo F. Nakai; Masaaki Tachioka; Akito Ugawa; Tadashi Ueda; Kazuya Watanabe; Yoshiyasu Matsumoto

Appl. Phys. Lett. 95, 243304 (2009) https://doi.org/10.1063/1.3275805

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Flexible pentacene organic thin film transistor circuits fabricated directly onto elastic silicone membranes

Ingrid M. Graz; Stéphanie P. Lacour

Appl. Phys. Lett. 95, 243305 (2009) https://doi.org/10.1063/1.3265737

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DEVICE PHYSICS

Extreme sensitivity displayed by single crystal diamond deep ultraviolet photoconductive devices

Mose Bevilacqua; Richard B Jackman

Appl. Phys. Lett. 95, 243501 (2009) https://doi.org/10.1063/1.3273378

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Mapping the Dirac point in gated bilayer graphene

A. Deshpande; W. Bao; Z. Zhao; C. N. Lau; B. J. LeRoy

Appl. Phys. Lett. 95, 243502 (2009) https://doi.org/10.1063/1.3275755

Abstract

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Theoretical modeling of the series resistance effect on dye-sensitized solar cell performance

Yang Huang; Songyuan Dai; Shuanghong Chen; Changneng Zhang; Yifeng Sui; Shangfeng Xiao; Linhua Hu

Appl. Phys. Lett. 95, 243503 (2009) https://doi.org/10.1063/1.3270532

Abstract

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Impact of $⟨ 110 ⟩$ uniaxial strain on n-channel ${In}_{0.15} {Ga}_{0.85} As$ high electron mobility transistors

Ling Xia; Jesús A. del Alamo

Appl. Phys. Lett. 95, 243504 (2009) https://doi.org/10.1063/1.3273028

Abstract

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INTERDISCIPLINARY AND GENERAL PHYSICS

Boundary-enhanced region-of-interest image reconstruction in propagation-based x-ray phase-contrast tomography

Mark A. Anastasio; Daxin Shi; Xiaochuan Pan

Appl. Phys. Lett. 95, 244101 (2009) https://doi.org/10.1063/1.3254235

Abstract

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COMMENTS

Comment on “Modification of graphene properties due to electron-beam irradiation” [Appl. Phys. Lett. 94, 013101 (2009)]

J. D. Jones; P. A. Ecton; Y. Mo; J. M. Perez

Appl. Phys. Lett. 95, 246101 (2009) https://doi.org/10.1063/1.3272954

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Response to “Comment on ‘Modification of graphene properties due to electron-beam irradiation’ ” [
Appl. Phys. Lett.

95
,
246101
(
2009
)]

D. Teweldebrhan; A. A. Balandin

Appl. Phys. Lett. 95, 246102 (2009) https://doi.org/10.1063/1.3272961

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

ORGANIC ELECTRONICS AND PHOTONICS

DEVICE PHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

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