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Issues

Volume 95, Issue 12
21 September 2009
Applied Physics Letters Cover Image for Volume 95, Issue 12
All Issues
ISSN 0003-6951
EISSN 1077-3118

LASERS, OPTICS, AND OPTOELECTRONICS

Experimental measurement of negative index in an all-dielectric metamaterial
T. Lepetit; É. Akmansoy; J.-P. Ganne
Appl. Phys. Lett. 95, 121101 (2009) https://doi.org/10.1063/1.3232222
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Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature
S. Faure; C. Brimont; T. Guillet; T. Bretagnon; B. Gil; F. Médard; D. Lagarde; P. Disseix; J. Leymarie; J. Zúñiga-Pérez; M. Leroux; E. Frayssinet; J. C. Moreno; F. Semond; S. Bouchoule
Appl. Phys. Lett. 95, 121102 (2009) https://doi.org/10.1063/1.3232228
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Transmission interference tuned by an external static magnetic field in a two-slit structure
Bin Hu; Ben-Yuan Gu; Yan Zhang; Ming Liu
Appl. Phys. Lett. 95, 121103 (2009) https://doi.org/10.1063/1.3232227
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Enhancement of light energy extraction from elliptical microcavity using external magnetic field for switching applications
E. H. Khoo; I. Ahmed; E. P. Li
Appl. Phys. Lett. 95, 121104 (2009) https://doi.org/10.1063/1.3231448
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Metallic nanoparticles as intermediate reflectors in tandem solar cells
Stephan Fahr; Carsten Rockstuhl; Falk Lederer
Appl. Phys. Lett. 95, 121105 (2009) https://doi.org/10.1063/1.3232230
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Enhanced absorption of metals over ultrabroad electromagnetic spectrum
A. Y. Vorobyev; A. N. Topkov; O. V. Gurin; V. A. Svich; Chunlei Guo
Appl. Phys. Lett. 95, 121106 (2009) https://doi.org/10.1063/1.3227668
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Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes
X. Li; X. Ni; J. Lee; M. Wu; Ü. Özgür; H. Morkoç; T. Paskova; G. Mulholland; K. R. Evans
Appl. Phys. Lett. 95, 121107 (2009) https://doi.org/10.1063/1.3236538
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Nanoscale optical tomography using volume-scanning near-field microscopy
Jin Sun; John C. Schotland; Rainer Hillenbrand; P. Scott Carney
Appl. Phys. Lett. 95, 121108 (2009) https://doi.org/10.1063/1.3224177
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Mach–Zehnder–Fano interferometer
Andrey E. Miroshnichenko; Yuri S. Kivshar
Appl. Phys. Lett. 95, 121109 (2009) https://doi.org/10.1063/1.3232224
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The effect of absorber doping on electrical and optical properties of nBn based type-II InAs/GaSb strained layer superlattice infrared detectors
Stephen Myers; Elena Plis; Arezou Khoshakhlagh; Ha Sul Kim; Yagya Sharma; Ralph Dawson; Sanjay Krishna; Aaron Gin
Appl. Phys. Lett. 95, 121110 (2009) https://doi.org/10.1063/1.3230069
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Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN
Qimin Yan; Patrick Rinke; Matthias Scheffler; Chris G. Van de Walle
Appl. Phys. Lett. 95, 121111 (2009) https://doi.org/10.1063/1.3236533
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Photocarrier recombination dynamics in highly excited SrTiO3 studied by transient absorption and photoluminescence spectroscopy
Yasuhiro Yamada; Hideki Yasuda; Takeshi Tayagaki; Yoshihiko Kanemitsu
Appl. Phys. Lett. 95, 121112 (2009) https://doi.org/10.1063/1.3238269
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PLASMAS AND ELECTRICAL DISCHARGES

Branched carbon treelike structures grown in direct current plasmas
F. Ding; X. D. Zhu; R. J. Zhan; T. L. Ni; B. Ke; H. Y. Zhou; M. D. Chen; X. H. Wen
Appl. Phys. Lett. 95, 121501 (2009) https://doi.org/10.1063/1.3232229
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High average power second harmonic generation in air
Martynas Beresna; Peter G. Kazansky; Yuri Svirko; Martynas Barkauskas; Romas Danielius
Appl. Phys. Lett. 95, 121502 (2009) https://doi.org/10.1063/1.3232235
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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Selecting a single orientation for millimeter sized graphene sheets
R. van Gastel; A. T. N’Diaye; D. Wall; J. Coraux; C. Busse; N. M. Buckanie; F.-J. Meyer zu Heringdorf; M. Horn von Hoegen; T. Michely; B. Poelsema
Appl. Phys. Lett. 95, 121901 (2009) https://doi.org/10.1063/1.3225554
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Stress influence on band-edge luminescence properties of 4H-AlN
Y. C. Cheng; X. L. Wu; S. H. Li; Paul K. Chu
Appl. Phys. Lett. 95, 121902 (2009) https://doi.org/10.1063/1.3232218
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Time-resolved photoluminescence analysis of two-peak emission behavior in Sr2Si5N8:Eu2+
Kee-Sun Sohn; Sangjun Lee; Rong-Jun Xie; Naoto Hirosaki
Appl. Phys. Lett. 95, 121903 (2009) https://doi.org/10.1063/1.3233972
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Lightweight sodium alanate thin films grown by reactive sputtering
M. Filippi; J. H. Rector; R. Gremaud; M. J. van Setten; B. Dam
Appl. Phys. Lett. 95, 121904 (2009) https://doi.org/10.1063/1.3236525
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The strong influence of heat losses on the accurate measurement of thermal diffusivity using lock-in thermography
Agustín Salazar; Arantza Mendioroz; Raquel Fuente
Appl. Phys. Lett. 95, 121905 (2009) https://doi.org/10.1063/1.3236782
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Study of the free energy of the La1−xCaxMnO3 manganites based on the temperature dependence of the crystal cell volume
G. D. Tang; S. P. Liu; X. Zhao; Y. G. Zhang; D. H. Ji; Y. F. Li; W. H. Qi; W. Chen; D. L. Hou
Appl. Phys. Lett. 95, 121906 (2009) https://doi.org/10.1063/1.3233934
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In-depth resolved Raman scattering analysis of secondary phases in Cu-poor CuInSe2 based thin films
X. Fontané; V. Izquierdo-Roca; L. Calvo-Barrio; J. Álvarez-Garcia; A. Pérez-Rodríguez; J. R. Morante; W. Witte
Appl. Phys. Lett. 95, 121907 (2009) https://doi.org/10.1063/1.3236770
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Orientation control and self-assembled nanopyramid structure of LaFeO3 films epitaxially grown on SrTiO3(001) substrates
Lei Bi; Hyun-Suk Kim; Gerald F. Dionne; C. A. Ross; Hanjong Paik; Yun Chang Park
Appl. Phys. Lett. 95, 121908 (2009) https://doi.org/10.1063/1.3222912
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A superlens for the deep ultraviolet
Alina Schilling; Joerg Schilling; Carsten Reinhardt; Boris Chichkov
Appl. Phys. Lett. 95, 121909 (2009) https://doi.org/10.1063/1.3226101
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Nitridating r-plane sapphire to improve crystal qualities and surface morphologies of a-plane GaN grown by metalorganic vapor phase epitaxy
Bei Ma; Weiguo Hu; Hideto Miyake; Kazumasa Hiramatsu
Appl. Phys. Lett. 95, 121910 (2009) https://doi.org/10.1063/1.3237164
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Structural relaxation and crystallization of NiTi thin film metallic glasses
Xu Huang; A. G. Ramirez
Appl. Phys. Lett. 95, 121911 (2009) https://doi.org/10.1063/1.3236544
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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Theoretical design of GaN/ferroelectric heterostructure: Toward a strained semiconductor on ferroelectrics
Jihua Zhang (张继华); Chuanren Yang (杨传仁); Song Wu (吴松); Ying Liu (刘颖); Hongwei Chen (陈宏伟); Wanli Zhang (张万里); Yanrong Li (李言荣)
Appl. Phys. Lett. 95, 122101 (2009) https://doi.org/10.1063/1.3231072
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Hall effect mobility of epitaxial graphene grown on silicon carbide
J. L. Tedesco; B. L. VanMil; R. L. Myers-Ward; J. M. McCrate; S. A. Kitt; P. M. Campbell; G. G. Jernigan; J. C. Culbertson; C. R. Eddy, Jr.; D. K. Gaskill
Appl. Phys. Lett. 95, 122102 (2009) https://doi.org/10.1063/1.3224887
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Evidence for existence of deep acceptor levels in SiGe-on-insulator substrate fabricated using Ge condensation technique
Haigui Yang; Dong Wang; Hiroshi Nakashima
Appl. Phys. Lett. 95, 122103 (2009) https://doi.org/10.1063/1.3234373
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Chemical structure of the (Zn1−x,Mgx)O/CuIn(S,Se)2 interface in thin film solar cells
F. Erfurth; B. Hußmann; A. Schöll; F. Reinert; A. Grimm; I. Lauermann; M. Bär; Th. Niesen; J. Palm; S. Visbeck; L. Weinhardt; E. Umbach
Appl. Phys. Lett. 95, 122104 (2009) https://doi.org/10.1063/1.3230071
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Application of secondary electron potential contrast on junction leakage isolation
Po-Tsun Liu; Jeng-Han Lee; Y. S. Huan; David Su
Appl. Phys. Lett. 95, 122105 (2009) https://doi.org/10.1063/1.3233963
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Electrical and thermoelectrical properties of SnTe-based films and superlattices
Akihiro Ishida; Tomohiro Yamada; Takuro Tsuchiya; Yoku Inoue; Sadao Takaoka; Takuji Kita
Appl. Phys. Lett. 95, 122106 (2009) https://doi.org/10.1063/1.3236541
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Enhanced charge-transport in surfactant-free PbSe quantum dot films grown by a laser-assisted spray process
G. Dedigamuwa; J. Lewis; J. Zhang; X. Jiang; P. Mukherjee; S. Witanachchi
Appl. Phys. Lett. 95, 122107 (2009) https://doi.org/10.1063/1.3233926
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Three-dimensional simulations of a thin film heterojunction solar cell with a point contact/defect passivation structure at the heterointerface
N. Allsop; R. Nürnberg; M. Ch. Lux-Steiner; Th. Schedel-Niedrig
Appl. Phys. Lett. 95, 122108 (2009) https://doi.org/10.1063/1.3233962
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Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures
K. Sawano; K. Toyama; R. Masutomi; T. Okamoto; N. Usami; K. Arimoto; K. Nakagawa; Y. Shiraki
Appl. Phys. Lett. 95, 122109 (2009) https://doi.org/10.1063/1.3229998
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Phonons in Ge nanowires
H. Peelaers; B. Partoens; F. M. Peeters
Appl. Phys. Lett. 95, 122110 (2009) https://doi.org/10.1063/1.3236526
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Quantum pumping with adiabatically modulated barriers in graphene
Rui Zhu; Huiming Chen
Appl. Phys. Lett. 95, 122111 (2009) https://doi.org/10.1063/1.3236785
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Large 1/f noise of unipolar resistance switching and its percolating nature
S. B. Lee; S. Park; J. S. Lee; S. C. Chae; S. H. Chang; M. H. Jung; Y. Jo; B. Kahng; B. S. Kang; M.-J. Lee; T. W. Noh
Appl. Phys. Lett. 95, 122112 (2009) https://doi.org/10.1063/1.3237167
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Homogeneous linewidth of the P31 bound exciton transition in silicon
A. Yang; M. Steger; T. Sekiguchi; M. L. W. Thewalt; J. W. Ager, III; E. E. Haller
Appl. Phys. Lett. 95, 122113 (2009) https://doi.org/10.1063/1.3238268
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MAGNETISM AND SUPERCONDUCTIVITY

Magnetic tunnel junction based microwave detector
X. Fan; R. Cao; T. Moriyama; W. Wang; H. W. Zhang; John Q. Xiao
Appl. Phys. Lett. 95, 122501 (2009) https://doi.org/10.1063/1.3231874
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Room-temperature ferromagnetism observed in Mo-doped indium oxide films
Chang-Yup Park; Soon-Gil Yoon; Young-Hun Jo; Sung-Chul Shin
Appl. Phys. Lett. 95, 122502 (2009) https://doi.org/10.1063/1.3232243
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Enhanced tunneling spin polarization from ultrathin layers of amorphous CoFe
Li Gao; Xin Jiang; Philip M. Rice; Stuart S. P. Parkin
Appl. Phys. Lett. 95, 122503 (2009) https://doi.org/10.1063/1.3216050
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Barnett effect in thin magnetic films and nanostructures
Stefan Bretzel; Gerrit E. W. Bauer; Yaroslav Tserkovnyak; Arne Brataas
Appl. Phys. Lett. 95, 122504 (2009) https://doi.org/10.1063/1.3232221
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Epitaxial growth and characterization of Eu0.5Sr0.5CoO3 thin films by off-axis sputtering
Daeyoung Kwon; Youngsu Wu; Bongju Kim; Bog G. Kim; Harold Y. Hwang
Appl. Phys. Lett. 95, 122505 (2009) https://doi.org/10.1063/1.3234372
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Current manipulation of a vortex confined in a micron-sized Fe19Ni81 disk
Akinobu Yamaguchi; Keiichi Motoi; Hideki Miyajima; Atsufumi Hirohata; Takehiro Yamaoka; Tsuyoshi Uchiyama; Yuichi Utsumi
Appl. Phys. Lett. 95, 122506 (2009) https://doi.org/10.1063/1.3236693
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Current-driven transitions in ferromagnetic/insulator/superconductor narrow stripes
S. Hacohen-Gourgy; B. Almog; G. Leibovitch; R. G. Mints; G. Deutscher
Appl. Phys. Lett. 95, 122507 (2009) https://doi.org/10.1063/1.3236780
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Highly asymmetric magnetic behavior in exchange biased systems induced by noncollinear field cooling
E. Jiménez; J. Camarero; J. Sort; J. Nogués; A. Hoffmann; F. J. Teran; P. Perna; J. M. García-Martín; B. Dieny; R. Miranda
Appl. Phys. Lett. 95, 122508 (2009) https://doi.org/10.1063/1.3236768
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Low temperature hydrothermal epitaxy and Raman study of heteroepitaxial BiFeO3 film
Dibyaranjan Rout; Seung Ho Han; Kyoung-Seok Moon; Ho Gi Kim; Chae Il Cheon; Suk-Joong L. Kang
Appl. Phys. Lett. 95, 122509 (2009) https://doi.org/10.1063/1.3237160
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Diffraction of spin waves from a submicrometer-size defect in a microwaveguide
Daniel R. Birt; Brian O’Gorman; Maxim Tsoi; Xiaoqin Li; Vladislav E. Demidov; Sergej O. Demokritov
Appl. Phys. Lett. 95, 122510 (2009) https://doi.org/10.1063/1.3237168
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DIELECTRICS AND FERROELECTRICITY

Hydrothermal synthesis of vertically aligned lead zirconate titanate nanowire arrays
Yirong Lin; Yingtao Liu; Henry A. Sodano
Appl. Phys. Lett. 95, 122901 (2009) https://doi.org/10.1063/1.3237170
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Thermally induced permittivity enhancement in La-doped ZrO2 grown by atomic layer deposition on Ge(100)
L. Lamagna; C. Wiemer; S. Baldovino; A. Molle; M. Perego; S. Schamm-Chardon; P. E. Coulon; M. Fanciulli
Appl. Phys. Lett. 95, 122902 (2009) https://doi.org/10.1063/1.3227669
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Maxwell–Wagner instability in bilayer dielectric stacks
K. B. Jinesh; Y. Lamy; J. H. Klootwijk; W. F. A. Besling
Appl. Phys. Lett. 95, 122903 (2009) https://doi.org/10.1063/1.3236532
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Tuning the remanent polarization of epitaxial ferroelectric thin films with strain
J. X. Zhang; D. G. Schlom; L. Q. Chen; C. B. Eom
Appl. Phys. Lett. 95, 122904 (2009) https://doi.org/10.1063/1.3231444
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NANOSCALE SCIENCE AND DESIGN

Transient drain current characteristics of ZnO nanowire field effect transistors
Jongsun Maeng; Woojin Park; Minhyeok Choe; Gunho Jo; Yung Ho Kahng; Takhee Lee
Appl. Phys. Lett. 95, 123101 (2009) https://doi.org/10.1063/1.3232203
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Enhanced yield strength of materials: The thinness effect
N. M. Jennett; R. Ghisleni; J. Michler
Appl. Phys. Lett. 95, 123102 (2009) https://doi.org/10.1063/1.3226106
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Conductive atomic force microscopy study of InAs growth kinetics on vicinal GaAs (110)
Paloma Tejedor; Laura Díez-Merino; Igor Beinik; Christian Teichert
Appl. Phys. Lett. 95, 123103 (2009) https://doi.org/10.1063/1.3232234
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Synthesis of GaAs nanowires with very small diameters and their optical properties with the radial quantum-confinement effect
Guoqiang Zhang; Kouta Tateno; Haruki Sanada; Takehiko Tawara; Hideki Gotoh; Hidetoshi Nakano
Appl. Phys. Lett. 95, 123104 (2009) https://doi.org/10.1063/1.3229886
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Electronic properties of graphene nanoribbons embedded in boron nitride sheets
Yi Ding; Yanli Wang; Jun Ni
Appl. Phys. Lett. 95, 123105 (2009) https://doi.org/10.1063/1.3234374
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Upper bound for the conductivity of nanotube networks
L. F. C. Pereira; C. G. Rocha; A. Latgé; J. N. Coleman; M. S. Ferreira
Appl. Phys. Lett. 95, 123106 (2009) https://doi.org/10.1063/1.3236534
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Structure of YSi2 nanowires from scanning tunneling spectroscopy and first principles
V. Iancu; P. R. C. Kent; C. G. Zeng; H. H. Weitering
Appl. Phys. Lett. 95, 123107 (2009) https://doi.org/10.1063/1.3236778
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Scanning Kelvin-probe study of the hydrogen-terminated diamond surface in ultrahigh vacuum
C. I. Pakes; D. Hoxley; J. R. Rabeau; M. T. Edmonds; R. Kalish; S. Prawer
Appl. Phys. Lett. 95, 123108 (2009) https://doi.org/10.1063/1.3222864
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Impurity induced spin filtering in graphene nanoribbons
X. H. Zheng; R. N. Wang; L. L. Song; Z. X. Dai; X. L. Wang; Z. Zeng
Appl. Phys. Lett. 95, 123109 (2009) https://doi.org/10.1063/1.3237165
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Electrical measurements of the polarization in a moving magnetic vortex
Jun-ichiro Ohe; Stewart E. Barnes; Hyun-Woo Lee; Sadamichi Maekawa
Appl. Phys. Lett. 95, 123110 (2009) https://doi.org/10.1063/1.3237166
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Ultrafast dynamics of femtosecond laser-induced nanostructure formation on metals
Taek Yong Hwang; A. Y. Vorobyev; Chunlei Guo
Appl. Phys. Lett. 95, 123111 (2009) https://doi.org/10.1063/1.3222937
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Negative differential resistance in PtIr/ZnO ribbon/sexithiophen hybrid double diodes
Ya Yang; Junjie Qi; Qingliang Liao; Wen Guo; Yishu Wang; Yue Zhang
Appl. Phys. Lett. 95, 123112 (2009) https://doi.org/10.1063/1.3232220
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Lithographic positioning of fluorescent molecules on high-Q photonic crystal cavities
Kelley Rivoire; Anika Kinkhabwala; Fariba Hatami; W. Ted Masselink; Yuri Avlasevich; Klaus Müllen; W. E. Moerner; Jelena Vučković
Appl. Phys. Lett. 95, 123113 (2009) https://doi.org/10.1063/1.3232233
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Improved precision in strain measurement using nanobeam electron diffraction
A. Béché; J. L. Rouvière; L. Clément; J. M. Hartmann
Appl. Phys. Lett. 95, 123114 (2009) https://doi.org/10.1063/1.3224886
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Large area few-layer graphene/graphite films as transparent thin conducting electrodes
Weiwei Cai; Yanwu Zhu; Xuesong Li; Richard D. Piner; Rodney S. Ruoff
Appl. Phys. Lett. 95, 123115 (2009) https://doi.org/10.1063/1.3220807
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Controlling the nonlinearity of silicon nanowire resonators using active feedback
John M. Nichol; Eric R. Hemesath; Lincoln J. Lauhon; Raffi Budakian
Appl. Phys. Lett. 95, 123116 (2009) https://doi.org/10.1063/1.3232232
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Fixed-angle observation of surface plasmon coupled chemiluminescence from palladium thin films
Kadir Aslan; Micah Weisenberg; Elinor Hortle; Chris D. Geddes
Appl. Phys. Lett. 95, 123117 (2009) https://doi.org/10.1063/1.3236773
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The performance volatility of carbon nanotube-based devices: Impact of ambient oxygen
Gugang Chen; Tereza M. Paronyan; Elena M. Pigos; Gamini U. Sumanasekera; Avetik R. Harutyunyan
Appl. Phys. Lett. 95, 123118 (2009) https://doi.org/10.1063/1.3236779
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Adsorption-induced magnetic properties and metallic behavior of graphene
Y. G. Zhou; X. T. Zu; F. Gao; H. F. Lv; H. Y. Xiao
Appl. Phys. Lett. 95, 123119 (2009) https://doi.org/10.1063/1.3236783
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Enhanced light extraction in nitride light-emitting diodes by epitaxially grown photonic-crystal nanopyramid arrays
P. A. Shields; C. Liu; M. Nasir; D. W. E. Allsopp; W. N. Wang
Appl. Phys. Lett. 95, 123120 (2009) https://doi.org/10.1063/1.3236784
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Meso-origami: Folding multilayer graphene sheets
Steven Cranford; Dipanjan Sen; Markus J. Buehler
Appl. Phys. Lett. 95, 123121 (2009) https://doi.org/10.1063/1.3223783
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Carbon nanotube volatile organic liquid sensor
Youngsik Song; Jaewu Choi
Appl. Phys. Lett. 95, 123122 (2009) https://doi.org/10.1063/1.3238325
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Facet formation during solid phase epitaxy regrowth: A lattice kinetic Monte Carlo model
Ignacio Martin-Bragado; Victor Moroz
Appl. Phys. Lett. 95, 123123 (2009) https://doi.org/10.1063/1.3236535
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ORGANIC ELECTRONICS AND PHOTONICS

Role of the deep-lying electronic states of MoO3 in the enhancement of hole-injection in organic thin films
M. Kröger; S. Hamwi; J. Meyer; T. Riedl; W. Kowalsky; A. Kahn
Appl. Phys. Lett. 95, 123301 (2009) https://doi.org/10.1063/1.3231928
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On the long time holographic grating recording process in azo-polymer
Anna Sobolewska; Stanislaw Bartkiewicz
Appl. Phys. Lett. 95, 123302 (2009) https://doi.org/10.1063/1.3232223
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Varying polymer crystallinity in nanofiber poly(3-alkylthiophene): PCBM solar cells: Influence on charge-transfer state energy and open-circuit voltage
Koen Vandewal; Wibren D. Oosterbaan; Sabine Bertho; Veerle Vrindts; Abay Gadisa; Laurence Lutsen; Dirk Vanderzande; Jean V. Manca
Appl. Phys. Lett. 95, 123303 (2009) https://doi.org/10.1063/1.3232242
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Organic-based sensor for chemical detection in aqueous solution
A. Caboni; E. Orgiu; E. Scavetta; M. Barbaro; A. Bonfiglio
Appl. Phys. Lett. 95, 123304 (2009) https://doi.org/10.1063/1.3232252
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Organic field-effect transistors fabricated with N,N′-substituted dialkyl-1,3,8,10-tetramethylquinacridone compounds
Zong-Xiang Xu; Hai-Feng Xiang; V. A. L. Roy; Stephen Sin-Yin Chui; Yue Wang; P. T. Lai; Chi-Ming Che
Appl. Phys. Lett. 95, 123305 (2009) https://doi.org/10.1063/1.3233961
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Inversion of magnetic field effects on electrical current and electroluminescence in tri-(8-hydroxyquinoline)-aluminum based light-emitting diodes
Linyuan Xin; Chuannan Li; Feng Li; Shiyong Liu; Bin Hu
Appl. Phys. Lett. 95, 123306 (2009) https://doi.org/10.1063/1.3233973
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Influence of interlayer on the performance of stacked white organic light-emitting devices
Ping Chen; Qin Xue; Wenfa Xie; Guohua Xie; Yu Duan; Yi Zhao; Shiyong Liu; Liying Zhang; Bin Li
Appl. Phys. Lett. 95, 123307 (2009) https://doi.org/10.1063/1.3234379
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Band dispersion of quasi-single crystal thin film phase pentacene monolayer studied by angle-resolved photoelectron spectroscopy
Manabu Ohtomo; Tadamasa Suzuki; Toshihiro Shimada; Tetsuya Hasegawa
Appl. Phys. Lett. 95, 123308 (2009) https://doi.org/10.1063/1.3232205
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Tilted bulk heterojunction organic photovoltaic cells grown by oblique angle deposition
Ning Li; Stephen R. Forrest
Appl. Phys. Lett. 95, 123309 (2009) https://doi.org/10.1063/1.3236838
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DEVICE PHYSICS

Efficient black silicon solar cell with a density-graded nanoporous surface: Optical properties, performance limitations, and design rules
Hao-Chih Yuan; Vernon E. Yost; Matthew R. Page; Paul Stradins; Daniel L. Meier; Howard M. Branz
Appl. Phys. Lett. 95, 123501 (2009) https://doi.org/10.1063/1.3231438
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The influence of the gate dielectrics on threshold voltage instability in amorphous indium-gallium-zinc oxide thin film transistors
Jaeseob Lee; Jin-Seong Park; Young Shin Pyo; Dong Bum Lee; Eun Hyun Kim; Denis Stryakhilev; Tae Woong Kim; Dong Un Jin; Yeon-Gon Mo
Appl. Phys. Lett. 95, 123502 (2009) https://doi.org/10.1063/1.3232179
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Selective liquid crystal molecule orientation on ion beam irradiated tantalum oxide ultrathin films
Ji-Hun Lim; Byeong-Yun Oh; Won-Kyu Lee; Kang-Min Lee; Hyun-Jae Na; Byoung-Yong Kim; Dae-Shik Seo; Jeong-Min Han; Jeong-Yeon Hwang
Appl. Phys. Lett. 95, 123503 (2009) https://doi.org/10.1063/1.3232239
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Voltage-tunable two-color quantum-dot infrared photodetectors
Shih-Yen Lin; Wei-Hsun Lin; Chi-Che Tseng; Kuang-Ping Chao; Shu-Cheng Mai
Appl. Phys. Lett. 95, 123504 (2009) https://doi.org/10.1063/1.3236543
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Impact of device configuration on the temperature instability of Al–Zn–Sn–O thin film transistors
Jae Kyeong Jeong; Shinhyuk Yang; Doo-Hee Cho; Sang-Hee Ko Park; Chi-Sun Hwang; Kyoung Ik Cho
Appl. Phys. Lett. 95, 123505 (2009) https://doi.org/10.1063/1.3236694
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Reduction of surface acoustic wave resonator normal acceleration sensitivity using piezoelectric actuators
X. Y. Shan; Y. T. Hu; J. S. Yang
Appl. Phys. Lett. 95, 123506 (2009) https://doi.org/10.1063/1.3236750
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A mechanical Kerr effect in deformable photonic media
W. H. P. Pernice; Mo Li; H. X. Tang
Appl. Phys. Lett. 95, 123507 (2009) https://doi.org/10.1063/1.3236530
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Role of shallow Si/SiO2 interface states on high frequency channel noise in n-channel metal-oxide-semiconductor field effect transistors
Hao Su (苏浩); Hong Wang (汪宏); Tao Xu (徐涛); Rong Zeng (曾嵘)
Appl. Phys. Lett. 95, 123508 (2009) https://doi.org/10.1063/1.3231924
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A high-Q hybrid acoustic mode in thin film ZnO solidly mounted resonators
Adam D. Wathen; Farasat Munir; William D. Hunt
Appl. Phys. Lett. 95, 123509 (2009) https://doi.org/10.1063/1.3238265
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BIOPHYSICS AND BIO-INSPIRED SYSTEMS

Fabrication of the gating nanopore device
Masateru Taniguchi; Makusu Tsutsui; Kazumichi Yokota; Tomoji Kawai
Appl. Phys. Lett. 95, 123701 (2009) https://doi.org/10.1063/1.3236769
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Observation of polarization-gate based reconstruction quality improvement during the process of turbidity suppression by optical phase conjugation
Meng Cui; Emily J. McDowell; Changhuei Yang
Appl. Phys. Lett. 95, 123702 (2009) https://doi.org/10.1063/1.3236836
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Structures and physiological functions of silica bodies in the epidermis of rice plants
Shigeru Yamanaka; Hiroyuki Takeda; Satoshi Komatsubara; Fuyu Ito; Hisanao Usami; Eiji Togawa; Katsumi Yoshino
Appl. Phys. Lett. 95, 123703 (2009) https://doi.org/10.1063/1.3232204
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INTERDISCIPLINARY AND GENERAL PHYSICS

⟨100⟩ n-type metal-oxide-semiconductor field-effect transistor-embedded microcantilever sensor for observing the kinetics of chemical molecules interaction
Jian Wang; Wengang Wu; Ying Huang; Yilong Hao
Appl. Phys. Lett. 95, 124101 (2009) https://doi.org/10.1063/1.3231074
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Observation of pressure stimulated voltages in rocks using an electric potential sensor
A. Aydin; R. J. Prance; H. Prance; C. J. Harland
Appl. Phys. Lett. 95, 124102 (2009) https://doi.org/10.1063/1.3236774
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Mesoporous silica films with varying porous volume fraction: Direct correlation between ortho-positronium annihilation decay and escape yield into vacuum
L. Liszkay; C. Corbel; L. Raboin; J.-P. Boilot; P. Perez; A. Brunet-Bruneau; P. Crivelli; U. Gendotti; A. Rubbia; T. Ohdaira; R. Suzuki
Appl. Phys. Lett. 95, 124103 (2009) https://doi.org/10.1063/1.3234381
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Tunable magnetoelastic phononic crystals
J.-F. Robillard; O. Bou Matar; J. O. Vasseur; P. A. Deymier; M. Stippinger; A.-C. Hladky-Hennion; Y. Pennec; B. Djafari-Rouhani
Appl. Phys. Lett. 95, 124104 (2009) https://doi.org/10.1063/1.3236537
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The influence of Saffman lift force on nanoparticle concentration distribution near a wall
Xu Zheng; Zhanhua Silber-Li
Appl. Phys. Lett. 95, 124105 (2009) https://doi.org/10.1063/1.3237159
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COMMENTS

Comment on “Influence of growth mode on the structural, optical, and electrical properties of In-doped ZnO nanorods” [Appl. Phys. Lett. 94, 041906 (2009)]
C. W. Zou; J. M. Bian
Appl. Phys. Lett. 95, 126101 (2009) https://doi.org/10.1063/1.3234375
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ERRATA

Publisher's Note: “X-ray absorption study of the electronic structure of Mn-doped amorphous Si” [Appl. Phys. Lett. 92, 142503 (2008)]
Li Zeng; A. Huegel; E. Helgren; F. Hellman; C. Piamonteze; E. Arenholz
Appl. Phys. Lett. 95, 129901 (2009) https://doi.org/10.1063/1.3238103
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Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer
Mritunjay Kumar, Vishal Khandelwal, et al.
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