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Issues
1 June 2009
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
Resonantly probing micropillar cavity modes by photocurrent spectroscopy
Appl. Phys. Lett. 94, 221103 (2009)
https://doi.org/10.1063/1.3147162
Time-resolved characterization of external-cavity quantum-cascade lasers
Appl. Phys. Lett. 94, 221105 (2009)
https://doi.org/10.1063/1.3142875
Observation of stimulated Raman scattering in silicon nanocomposites
Appl. Phys. Lett. 94, 221106 (2009)
https://doi.org/10.1063/1.3148669
Distortion of the intense terahertz signal measured by spectral-encoding technique
Appl. Phys. Lett. 94, 221107 (2009)
https://doi.org/10.1063/1.3148674
High-speed liquid lens with 2 ms response and 80.3 nm root-mean-square wavefront error
Appl. Phys. Lett. 94, 221108 (2009)
https://doi.org/10.1063/1.3143624
Low-noise GaN ultraviolet photodiodes on GaN substrates
Yun Zhang; Shyh-Chiang Shen; Hee Jin Kim; Suk Choi; Jae-Hyun Ryou; Russell D. Dupuis; Bravishma Narayan
Appl. Phys. Lett. 94, 221109 (2009)
https://doi.org/10.1063/1.3148812
High power efficiency in multilayer light emitting devices by bipolar direct tunneling
Appl. Phys. Lett. 94, 221110 (2009)
https://doi.org/10.1063/1.3147164
Impact of disorder on surface plasmons in two-dimensional arrays of metal nanoparticles
Appl. Phys. Lett. 94, 221111 (2009)
https://doi.org/10.1063/1.3152292
Enhanced directional lasing by the interference between stable and unstable periodic orbits
Appl. Phys. Lett. 94, 221112 (2009)
https://doi.org/10.1063/1.3148682
Optimal electro-optic sensor configuration for phase noise limited, remote field sensing applications
Appl. Phys. Lett. 94, 221113 (2009)
https://doi.org/10.1063/1.3152792
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
Local, submicron, strain gradients as the cause of Sn whisker growth
Appl. Phys. Lett. 94, 221901 (2009)
https://doi.org/10.1063/1.3147864
A reliable method of manufacturing metallic hierarchical superhydrophobic surfaces
Appl. Phys. Lett. 94, 221902 (2009)
https://doi.org/10.1063/1.3148363
Interface structure and the chemical states of Pt film on polar-ZnO single crystal
T. Nagata; J. Volk; Y. Yamashita; H. Yoshikawa; M. Haemori; R. Hayakawa; M. Yoshitake; S. Ueda; K. Kobayashi; T. Chikyow
Appl. Phys. Lett. 94, 221904 (2009)
https://doi.org/10.1063/1.3149701
Hydrogen sorption in Pd-decorated Mg–MgO core-shell nanoparticles
Appl. Phys. Lett. 94, 221905 (2009)
https://doi.org/10.1063/1.3147205
Influence of structural changes on diffusion in liquid germanium
Appl. Phys. Lett. 94, 221906 (2009)
https://doi.org/10.1063/1.3139753
Doping selective lateral electrochemical etching of GaN for chemical lift-off
Appl. Phys. Lett. 94, 221907 (2009)
https://doi.org/10.1063/1.3153116
Proximity gettering of Cu at a (110)/(001) grain boundary interface formed by direct silicon bonding
Appl. Phys. Lett. 94, 221909 (2009)
https://doi.org/10.1063/1.3151914
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
Modeling single-particle energy levels and resonance currents in a coherent electronic quantum dot mixer
Appl. Phys. Lett. 94, 222101 (2009)
https://doi.org/10.1063/1.3147196
Controlling the conductance and noise of driven carbon-based Fabry–Pérot devices
Appl. Phys. Lett. 94, 222103 (2009)
https://doi.org/10.1063/1.3147865
Tailoring the hole concentration in superlattices based on nitride alloys
Appl. Phys. Lett. 94, 222104 (2009)
https://doi.org/10.1063/1.3148244
Metal organic chemical vapor deposition of crack-free GaN-based light emitting diodes on Si (111) using a thin interlayer
William E. Fenwick; Andrew Melton; Tianming Xu; Nola Li; Christopher Summers; Muhammad Jamil; Ian T. Ferguson
Appl. Phys. Lett. 94, 222105 (2009)
https://doi.org/10.1063/1.3148328
Terahertz generation in GaN diodes operating in pulsed regime limited by self-heating
Appl. Phys. Lett. 94, 222106 (2009)
https://doi.org/10.1063/1.3147217
Reduction of native oxides on GaAs during atomic layer growth of
Hang Dong Lee; Tian Feng; Lei Yu; Daniel Mastrogiovanni; Alan Wan; Torgny Gustafsson; Eric Garfunkel
Appl. Phys. Lett. 94, 222108 (2009)
https://doi.org/10.1063/1.3148723
Electrical detection of spin precession in single layer graphene spin valves with transparent contacts
Appl. Phys. Lett. 94, 222109 (2009)
https://doi.org/10.1063/1.3147203
Thickness dependence of the mobility at the interface
Appl. Phys. Lett. 94, 222111 (2009)
https://doi.org/10.1063/1.3149695
Comparative study of electrical instabilities in top-gate InGaZnO thin film transistors with and gate dielectrics
Appl. Phys. Lett. 94, 222112 (2009)
https://doi.org/10.1063/1.3151865
Characterization of near-infrared -type -type Si heterojunction photodiodes at room temperature
Appl. Phys. Lett. 94, 222113 (2009)
https://doi.org/10.1063/1.3151915
Determination of wurtzite InN/cubic heterojunction band offset by x-ray photoelectron spectroscopy
H. P. Song; A. L. Yang; H. Y. Wei; Y. Guo; B. Zhang; G. L. Zheng; S. Y. Yang; X. L. Liu; Q. S. Zhu; Z. G. Wang; T. Y. Yang; H. H. Wang
Appl. Phys. Lett. 94, 222114 (2009)
https://doi.org/10.1063/1.3151956
Change in the resistivity of Ge-doped Sb phase change thin films grown by chemical vapor deposition according to their microstructures
Jin-Hyock Kim; Keun Lee; Su-Jin Chae; Il-Keoun Han; Jae-Sung Roh; Sung-Ki Park; Byung Joon Choi; Cheol Seong Hwang; Eunae Cho; Seungwu Han
Appl. Phys. Lett. 94, 222115 (2009)
https://doi.org/10.1063/1.3151959
MAGNETISM AND SUPERCONDUCTIVITY
“All-Heusler alloy” current-perpendicular-to-plane giant magnetoresistance
Konstantin Nikolaev; Paul Kolbo; Taras Pokhil; Xilin Peng; Yonghua Chen; Thomas Ambrose; Oleg Mryasov
Appl. Phys. Lett. 94, 222501 (2009)
https://doi.org/10.1063/1.3126962
Magnetocaloric effect in preferentially textured melt spun ribbons
Appl. Phys. Lett. 94, 222502 (2009)
https://doi.org/10.1063/1.3147875
Planar superconductor/ferromagnet hybrids: Anisotropy of resistivity induced by magnetic templates
Appl. Phys. Lett. 94, 222503 (2009)
https://doi.org/10.1063/1.3149698
DIELECTRICS AND FERROELECTRICITY
Locally induced charged states in single crystals
Appl. Phys. Lett. 94, 222901 (2009)
https://doi.org/10.1063/1.3147163
Temperature stability of lead-free piezoelectric ceramics
Appl. Phys. Lett. 94, 222902 (2009)
https://doi.org/10.1063/1.3153157
Visualization of a ferroelectric domain structure in the cut of a crystal using x-ray diffraction and topography
Appl. Phys. Lett. 94, 222903 (2009)
https://doi.org/10.1063/1.3151817
NANOSCALE SCIENCE AND DESIGN
Mode-locking nanoporous alumina membrane embedded with carbon nanotube saturable absorber
Appl. Phys. Lett. 94, 223102 (2009)
https://doi.org/10.1063/1.3147857
Optical properties of well-crystallized and size-tuned ZnO quantum dots
Appl. Phys. Lett. 94, 223103 (2009)
https://doi.org/10.1063/1.3147874
A scale-bridging method for nanoparticulate polymer nanocomposites and their nondilute concentration effect
Appl. Phys. Lett. 94, 223104 (2009)
https://doi.org/10.1063/1.3143669
Magnetic states of zigzag graphene nanoribbons from first principles
Appl. Phys. Lett. 94, 223105 (2009)
https://doi.org/10.1063/1.3147854
Superhydrophobic amorphous carbon/carbon nanotube nanocomposites
Appl. Phys. Lett. 94, 223106 (2009)
https://doi.org/10.1063/1.3148667
Structural and electronic properties of the planar C-skeleton polymers
Appl. Phys. Lett. 94, 223107 (2009)
https://doi.org/10.1063/1.3148722
The optimal Seebeck coefficient for obtaining the maximum power factor in thermoelectrics
Appl. Phys. Lett. 94, 223108 (2009)
https://doi.org/10.1063/1.3147186
Improving lateral resolution of electrostatic force microscopy by multifrequency method under ambient conditions
Appl. Phys. Lett. 94, 223109 (2009)
https://doi.org/10.1063/1.3147198
Ultralow-power hydrogen sensing with single palladium nanowires
Appl. Phys. Lett. 94, 223110 (2009)
https://doi.org/10.1063/1.3132064
Materials design of half-metallic graphene and graphene nanoribbons
Appl. Phys. Lett. 94, 223111 (2009)
https://doi.org/10.1063/1.3143611
Diluted chirality dependence in edge rough graphene nanoribbon field-effect transistors
Appl. Phys. Lett. 94, 223112 (2009)
https://doi.org/10.1063/1.3147187
Silver high-aspect-ratio micro- and nanoimprinting for optical applications
Appl. Phys. Lett. 94, 223115 (2009)
https://doi.org/10.1063/1.3142426
Thermal conductivity of bismuth telluride nanowire array-epoxy composite
Appl. Phys. Lett. 94, 223116 (2009)
https://doi.org/10.1063/1.3143221
Modulation doping in ZnO nanorods for electrical nanodevice applications
Appl. Phys. Lett. 94, 223117 (2009)
https://doi.org/10.1063/1.3148666
Assembly and magnetic properties of nickel nanoparticles on silicon nanowires
Appl. Phys. Lett. 94, 223118 (2009)
https://doi.org/10.1063/1.3148860
Enhanced broadband photoresponse of Ge/CdS nanowire radial heterostructures
Appl. Phys. Lett. 94, 223119 (2009)
https://doi.org/10.1063/1.3149704
Effect of 16-mercaptohexadecanoic acid modification on liquid transport in a nanoporous carbon
Appl. Phys. Lett. 94, 223120 (2009)
https://doi.org/10.1063/1.3149826
site-controlled quantum dot system offering both high uniformity and spectral purity
Appl. Phys. Lett. 94, 223121 (2009)
https://doi.org/10.1063/1.3147213
Nanoenabled microelectromechanical sensor for volatile organic chemical detection
Appl. Phys. Lett. 94, 223122 (2009)
https://doi.org/10.1063/1.3151919
ORGANIC ELECTRONICS AND PHOTONICS
Blue phosphorescent organic light-emitting device with double emitting layer
Appl. Phys. Lett. 94, 223301 (2009)
https://doi.org/10.1063/1.3147866
Method of determining the exciton diffusion length using optical interference effect in Schottky diode
Appl. Phys. Lett. 94, 223303 (2009)
https://doi.org/10.1063/1.3142869
Interface morphologies and interlayer diffusions in organic light emitting device by x-ray scattering
Appl. Phys. Lett. 94, 223305 (2009)
https://doi.org/10.1063/1.3148648
Enhanced hole injection in organic light-emitting devices by using as an anodic buffer layer
Dan-Dan Zhang; Jing Feng; Yue-Feng Liu; Yu-Qing Zhong; Yu Bai; Yu Jin; Guo-Hua Xie; Qin Xue; Yi Zhao; Shi-Yong Liu; Hong-Bo Sun
Appl. Phys. Lett. 94, 223306 (2009)
https://doi.org/10.1063/1.3148657
Improved bulk heterojunction organic solar cells employing fullerenes
Appl. Phys. Lett. 94, 223307 (2009)
https://doi.org/10.1063/1.3148664
Moderately anisotropic field-effect mobility in dinaphthothiophenothiophenes single-crystal transistors
Appl. Phys. Lett. 94, 223308 (2009)
https://doi.org/10.1063/1.3153119
Revisiting the origin of open circuit voltage in nanocrystalline-/polymer heterojunction solar cells
Appl. Phys. Lett. 94, 223309 (2009)
https://doi.org/10.1063/1.3153122
Low-lying lattice modes of highly uniform pentacene monolayers
Appl. Phys. Lett. 94, 223310 (2009)
https://doi.org/10.1063/1.3151867
Carbon nanotube and conducting polymer dual-layered films fabricated by microcontact printing
Jin Woo Huh; Jin Wook Jeong; Jin Woo Lee; Sang-Il Shin; Jae-Hong Kwon; Jinnil Choi; Ho Gyu Yoon; Gyeong-Ik Cho; In-Kyu You; Seung-Youl Kang; Byeong Kwon Ju
Appl. Phys. Lett. 94, 223311 (2009)
https://doi.org/10.1063/1.3137185
DEVICE PHYSICS
Horizontal position analysis of single acceptors in Si nanoscale field-effect transistors
Appl. Phys. Lett. 94, 223501 (2009)
https://doi.org/10.1063/1.3147209
Fermi edge singularity observed in GaN/AlGaN heterointerfaces
N. Akopian; A. Vardi; G. Bahir; V. Garber; E. Ehrenfreund; D. Gershoni; C. Poblenz; C. R. Elsass; I. P. Smorchkova; J. S. Speck
Appl. Phys. Lett. 94, 223502 (2009)
https://doi.org/10.1063/1.3147869
Sensing of atomized liquids through field effects of polarization and ionization induced by nanostructures
Appl. Phys. Lett. 94, 223503 (2009)
https://doi.org/10.1063/1.3138122
Current-matched triple-junction solar cell reaching 41.1% conversion efficiency under concentrated sunlight
Wolfgang Guter; Jan Schöne; Simon P. Philipps; Marc Steiner; Gerald Siefer; Alexander Wekkeli; Elke Welser; Eduard Oliva; Andreas W. Bett; Frank Dimroth
Appl. Phys. Lett. 94, 223504 (2009)
https://doi.org/10.1063/1.3148341
Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness
Appl. Phys. Lett. 94, 223505 (2009)
https://doi.org/10.1063/1.3140505
Vertical alignment of liquid crystals on a fully oxidized surface by ion bombardment
Appl. Phys. Lett. 94, 223507 (2009)
https://doi.org/10.1063/1.3126961
Aluminum/polyaniline/GaAs metal-insulator-semiconductor solar cell: Effect of tunneling on device performance
Appl. Phys. Lett. 94, 223509 (2009)
https://doi.org/10.1063/1.3149703
Impact of field-enhanced band-traps-band tunneling on the dark current generation in germanium photodetector
Appl. Phys. Lett. 94, 223515 (2009)
https://doi.org/10.1063/1.3151913
INTERDISCIPLINARY AND GENERAL PHYSICS
Growth rate enhancement by nitrogen in diamond chemical vapor deposition—a catalytic effect
Appl. Phys. Lett. 94, 224101 (2009)
https://doi.org/10.1063/1.3143631
Microcantilever array with embedded metal oxide semiconductor field effect transistor actuators for deflection control, deflection sensing, and high frequency oscillation
Stanley S. Chou; Yun Young Kim; Arvind Srivastava; Benjamin Murphy; Oluwaseyi Balogun; Soo-Hyun Tark; Gajendra Shekhawat; Vinayak P. Dravid
Appl. Phys. Lett. 94, 224103 (2009)
https://doi.org/10.1063/1.3133333
Mössbauer studies of complex materials: Energy versus time domain
N. Planckaert; R. Callens; J. Demeter; B. Laenens; J. Meersschaut; W. Sturhahn; S. Kharlamova; K. Temst; A. Vantomme
Appl. Phys. Lett. 94, 224104 (2009)
https://doi.org/10.1063/1.3147185
Synchronized locomotion of freely suspended disjoint microbeads pairs
Appl. Phys. Lett. 94, 224105 (2009)
https://doi.org/10.1063/1.3132582
Phase and strain distributions associated with reactive contaminants inside of a solid oxide fuel cell
Appl. Phys. Lett. 94, 224106 (2009)
https://doi.org/10.1063/1.3148362
Effect of spin frustration and spin-orbit coupling on the ferroelectric polarization in multiferroic
Appl. Phys. Lett. 94, 224107 (2009)
https://doi.org/10.1063/1.3151912
ERRATA
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Feedback cooling of an insulating high-Q diamagnetically levitated plate
S. Tian, K. Jadeja, et al.
Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices
Joachim Würfl, Tomás Palacios, et al.