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Issues
25 May 2009
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
The impact of intermediate reflectors on light absorption in tandem solar cells with randomly textured surfaces
Appl. Phys. Lett. 94, 211101 (2009)
https://doi.org/10.1063/1.3142421
Donor-related cathodoluminescence of -AlGaN electron blocking layer embedded in ultraviolet laser diode structure
Rui Li; Jingming Zhang; Li Chen; Huabo Zhao; Ziwen Yang; Tao Yu; Ding Li; Zhicheng Liu; Weihua Chen; Zhijian Yang; Guoyi Zhang; Zizhao Gan; Xiaodong Hu; Qiyuan Wei; Ti Li; F. A. Ponce
Appl. Phys. Lett. 94, 211103 (2009)
https://doi.org/10.1063/1.3143606
Integrated quantum cascade laser-modulator using vertically coupled cavities
Appl. Phys. Lett. 94, 211105 (2009)
https://doi.org/10.1063/1.3138779
Polarization sensitive terahertz time-domain spectroscopy for birefringent materials
Appl. Phys. Lett. 94, 211106 (2009)
https://doi.org/10.1063/1.3143613
Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields
Appl. Phys. Lett. 94, 211107 (2009)
https://doi.org/10.1063/1.3142386
PLASMAS AND ELECTRICAL DISCHARGES
Reconstruction of ion energy distribution function in a capacitive rf discharge
Appl. Phys. Lett. 94, 211503 (2009)
https://doi.org/10.1063/1.3147216
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
Time-resolved photoluminescence spectroscopy of the initial oxidation stage of small silicon nanocrystals
Appl. Phys. Lett. 94, 211903 (2009)
https://doi.org/10.1063/1.3141481
Dynamics of strain relaxation studied by in situ x-ray diffraction immediately after layer heteroepitaxy
Appl. Phys. Lett. 94, 211905 (2009)
https://doi.org/10.1063/1.3143630
Structural heterogeneity and homogeneous nucleation of glass
Appl. Phys. Lett. 94, 211907 (2009)
https://doi.org/10.1063/1.3142394
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
Spray deposited molybdenum doped indium oxide thin films with high near infrared transparency and carrier mobility
Appl. Phys. Lett. 94, 212101 (2009)
https://doi.org/10.1063/1.3142424
Resistance switching at the anode interface
Appl. Phys. Lett. 94, 212102 (2009)
https://doi.org/10.1063/1.3139761
First-principles calculations of electron mobilities in silicon: Phonon and Coulomb scattering
Appl. Phys. Lett. 94, 212103 (2009)
https://doi.org/10.1063/1.3147189
Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O
Appl. Phys. Lett. 94, 212106 (2009)
https://doi.org/10.1063/1.3147856
Spin polarized tunneling magnetoresistance in the self-doped manganite
Appl. Phys. Lett. 94, 212107 (2009)
https://doi.org/10.1063/1.3147873
Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes
Yu-Lin Wang; F. Ren; U. Zhang; Q. Sun; C. D. Yerino; T. S. Ko; Y. S. Cho; I. H. Lee; J. Han; S. J. Pearton
Appl. Phys. Lett. 94, 212108 (2009)
https://doi.org/10.1063/1.3148369
MAGNETISM AND SUPERCONDUCTIVITY
The structural force arising from magnetic interactions in polydisperse ferrofluids
Appl. Phys. Lett. 94, 212501 (2009)
https://doi.org/10.1063/1.3141487
Subnanosecond time response of large-area superconducting stripline detectors for keV molecular ions
Appl. Phys. Lett. 94, 212502 (2009)
https://doi.org/10.1063/1.3142419
Electric field manipulation of magnetization at room temperature in multiferroic heterostructures
Appl. Phys. Lett. 94, 212504 (2009)
https://doi.org/10.1063/1.3143622
Direct measurement of thin-film thermoelectric figure of merit
Rajeev Singh; Zhixi Bian; Ali Shakouri; Gehong Zeng; Je-Hyeong Bahk; John E. Bowers; Joshua M. O. Zide; Arthur C. Gossard
Appl. Phys. Lett. 94, 212508 (2009)
https://doi.org/10.1063/1.3094880
Optical band gap and magnetic properties of unstrained films
J. H. Lee; X. Ke; N. J. Podraza; L. Fitting Kourkoutis; T. Heeg; M. Roeckerath; J. W. Freeland; C. J. Fennie; J. Schubert; D. A. Muller; P. Schiffer; D. G. Schlom
Appl. Phys. Lett. 94, 212509 (2009)
https://doi.org/10.1063/1.3133351
Magnetic and transport properties of -type Fe-doped ferromagnetic thin films
Appl. Phys. Lett. 94, 212510 (2009)
https://doi.org/10.1063/1.3147190
DIELECTRICS AND FERROELECTRICITY
Band alignment of atomic layer deposited gate dielectrics on Si (100)
Dahlang Tahir; Eun Kyoung Lee; Suhk Kun Oh; Tran Thi Tham; Hee Jae Kang; Hua Jin; Sung Heo; Ju Chul Park; Jae Gwan Chung; Jae Cheol Lee
Appl. Phys. Lett. 94, 212902 (2009)
https://doi.org/10.1063/1.3143223
The influence of point defects and inhomogeneous strain on the functional behavior of thin film ferroelectrics
Appl. Phys. Lett. 94, 212905 (2009)
https://doi.org/10.1063/1.3132583
Separation of piezoelectric grain resonance and domain wall dispersion in ceramics
Appl. Phys. Lett. 94, 212906 (2009)
https://doi.org/10.1063/1.3147166
Capacitance-voltage and retention characteristics of structures with various buffer layer thickness
Appl. Phys. Lett. 94, 212907 (2009)
https://doi.org/10.1063/1.3147859
NANOSCALE SCIENCE AND DESIGN
nanoarchitecture light emitting diode microarrays
Chul-Ho Lee; Jinkyoung Yoo; Young Joon Hong; Jeonghui Cho; Yong-Jin Kim; Seong-Ran Jeon; Jong Hyeob Baek; Gyu-Chul Yi
Appl. Phys. Lett. 94, 213101 (2009)
https://doi.org/10.1063/1.3139865
High angular tolerant color filter using subwavelength grating
Byoung-Ho Cheong; O. N. Prudnikov; Eunhyoung Cho; Hae-Sung Kim; Jaeho Yu; Young-Sang Cho; Hwan-Young Choi; Sung Tae Shin
Appl. Phys. Lett. 94, 213104 (2009)
https://doi.org/10.1063/1.3139058
Real-time in situ spectroscopic ellipsometry of GaSb nanostructures during sputtering
Appl. Phys. Lett. 94, 213105 (2009)
https://doi.org/10.1063/1.3133350
Behavior of a chemically doped graphene junction
Appl. Phys. Lett. 94, 213106 (2009)
https://doi.org/10.1063/1.3142865
Growth of alloy nanowires in a separated -field by microwave processing
Appl. Phys. Lett. 94, 213107 (2009)
https://doi.org/10.1063/1.3143232
Thermoelectric performance of silicon nanowires
Appl. Phys. Lett. 94, 213108 (2009)
https://doi.org/10.1063/1.3143616
Self-assembled nanoparticle spirals from two-dimensional compositional banding in thin films
Appl. Phys. Lett. 94, 213110 (2009)
https://doi.org/10.1063/1.3143666
Order-disorder transition and Curie transition in nanoalloy
Appl. Phys. Lett. 94, 213112 (2009)
https://doi.org/10.1063/1.3143610
Enhanced ultraviolet emission from hybrid structures of single-walled carbon nanotubes/ZnO films
Appl. Phys. Lett. 94, 213113 (2009)
https://doi.org/10.1063/1.3148646
ORGANIC ELECTRONICS AND PHOTONICS
Aluminum doped zinc oxide for organic photovoltaics
Appl. Phys. Lett. 94, 213301 (2009)
https://doi.org/10.1063/1.3142423
Dual luminescence from organic/inorganic hybrid junction light-emitting diodes
Appl. Phys. Lett. 94, 213302 (2009)
https://doi.org/10.1063/1.3148635
DEVICE PHYSICS
Hot-electron characteristics in chemically resolved electrical measurements of thin silica and SiON layers
Appl. Phys. Lett. 94, 213501 (2009)
https://doi.org/10.1063/1.3141454
Endurance enhancement of Cu-oxide based resistive switching memory with Al top electrode
Hangbing Lv; Ming Wang; Haijun Wan; Yali Song; Wenjing Luo; Peng Zhou; Tingao Tang; Yinyin Lin; R. Huang; S. Song; J. G. Wu; H. M. Wu; M. H. Chi
Appl. Phys. Lett. 94, 213502 (2009)
https://doi.org/10.1063/1.3142392
Improved performance of InAlN-based Schottky solar-blind photodiodes
Appl. Phys. Lett. 94, 213504 (2009)
https://doi.org/10.1063/1.3142870
Pressure dependent resonant frequency of micromechanical drumhead resonators
Appl. Phys. Lett. 94, 213506 (2009)
https://doi.org/10.1063/1.3141731
The conductance method in a bottom-up approach applied on hafnium oxide/silicon interfaces
Appl. Phys. Lett. 94, 213507 (2009)
https://doi.org/10.1063/1.3138125
double-heterostructure light-emitting diodes achieving electroluminescence of 0.4 mW at room temperature
Appl. Phys. Lett. 94, 213509 (2009)
https://doi.org/10.1063/1.3147168
A spatial light modulator for terahertz beams
Wai Lam Chan; Hou-Tong Chen; Antoinette J. Taylor; Igal Brener; Michael J. Cich; Daniel M. Mittleman
Appl. Phys. Lett. 94, 213511 (2009)
https://doi.org/10.1063/1.3147221
High responsivity -plane GaN-based metal-semiconductor-metal photodetectors for polarization-sensitive applications
Appl. Phys. Lett. 94, 213512 (2009)
https://doi.org/10.1063/1.3143230
Hybrid electro-optic polymer/sol-gel waveguide directional coupler switches
Appl. Phys. Lett. 94, 213513 (2009)
https://doi.org/10.1063/1.3141452
INTERDISCIPLINARY AND GENERAL PHYSICS
ERRATA
Erratum: “High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays” [Appl. Phys. Lett. 94, 141111 (2009)]
Ya-Ju Lee; Shawn-Yu Lin; Ching-Hua Chiu; Tien-Chang Lu; Hao-Chung Kuo; Shing-Chung Wang; Sameer Chhajed; Jong Kyu Kim; E. Fred Schubert
Appl. Phys. Lett. 94, 219901 (2009)
https://doi.org/10.1063/1.3144242
Erratum: “Switchable magnetic dipole induced guided vortex motion” [Appl. Phys. Lett. 93, 022507 (2008)]
Appl. Phys. Lett. 94, 219903 (2009)
https://doi.org/10.1063/1.3141403
Erratum: “The unsaturated photocurrent controlled by two-dimensional barrier geometry of a single ZnO nanowire Schottky photodiode” [Appl. Phys. Lett. 93, 123103 (2008)]
Gang Cheng; Zhaohan Li; Shujie Wang; Hechun Gong; Ke Cheng; Xiaohong Jiang; Shaomin Zhou; Zuliang Du; Tian Cui; Guangtian Zou
Appl. Phys. Lett. 94, 219904 (2009)
https://doi.org/10.1063/1.3131783
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer
Mritunjay Kumar, Vishal Khandelwal, et al.