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LASERS, OPTICS, AND OPTOELECTRONICS

Direct-gap exciton and optical absorption in the Ge/SiGe quantum well system

Yu-Hsuan Kuo; Yin-Shun Li

Appl. Phys. Lett. 94, 121101 (2009) https://doi.org/10.1063/1.3106621

Abstract

View articletitled, Direct-gap exciton and optical absorption in the Ge/SiGe quantum well system

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Scalable implementation of strongly coupled cavity-quantum dot devices

A. Dousse; J. Suffczyński; R. Braive; A. Miard; A. Lemaître; I. Sagnes; L. Lanco; J. Bloch; P. Voisin; P. Senellart

Appl. Phys. Lett. 94, 121102 (2009) https://doi.org/10.1063/1.3100781

Abstract

View articletitled, Scalable implementation of strongly coupled cavity-quantum dot devices

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Acoustoelectric luminescence from a field-effect $n - i - p$ lateral junction

Giorgio De Simoni; Vincenzo Piazza; Lucia Sorba; Giorgio Biasiol; Fabio Beltram

Appl. Phys. Lett. 94, 121103 (2009) https://doi.org/10.1063/1.3106108

Abstract

View articletitled, Acoustoelectric luminescence from a field-effect <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>n</mi><mtext>-</mtext><mi>i</mi><mtext>-</mtext><mi>p</mi></mrow></math> lateral junction

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High-speed switching of spin polarization for proposed spin-photon memory

V. Zayets; K. Ando

Appl. Phys. Lett. 94, 121104 (2009) https://doi.org/10.1063/1.3106637

Abstract

View articletitled, High-speed switching of spin polarization for proposed spin-photon memory

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Mid-infrared tunable two-dimensional Talbot array illuminator

P. Maddaloni; M. Paturzo; P. Ferraro; P. Malara; P. De Natale; M. Gioffrè; G. Coppola; M. Iodice

Appl. Phys. Lett. 94, 121105 (2009) https://doi.org/10.1063/1.3109794

Abstract

View articletitled, Mid-infrared tunable two-dimensional Talbot array illuminator

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High quality factor photonic crystal nanobeam cavities

Parag B. Deotare; Murray W. McCutcheon; Ian W. Frank; Mughees Khan; Marko Lončar

Appl. Phys. Lett. 94, 121106 (2009) https://doi.org/10.1063/1.3107263

Abstract

View articletitled, High quality factor photonic crystal nanobeam cavities

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PLASMAS AND ELECTRICAL DISCHARGES

Influence of a transverse magnetic field on arc root movements in a dc plasma torch: Diamagnetic effect of arc column

Keun Su Kim

Appl. Phys. Lett. 94, 121501 (2009) https://doi.org/10.1063/1.3109782

Abstract

View articletitled, Influence of a transverse magnetic field on arc root movements in a dc plasma torch: Diamagnetic effect of arc column

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

An acoustic emission study of the effect of a magnetic field on the martensitic transition in ${Ni}_{2} MnGa$

Benno Ludwig; Christian Strothkaemper; Uwe Klemradt; Xavier Moya; Lluís Mañosa; Eduard Vives; Antoni Planes

Appl. Phys. Lett. 94, 121901 (2009) https://doi.org/10.1063/1.3103289

Abstract

View articletitled, An acoustic emission study of the effect of a magnetic field on the martensitic transition in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Ni</mtext></mrow><mn>2</mn></msub><mtext>MnGa</mtext></mrow></math>

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Pulsed metal-organic chemical vapor deposition of high-quality AlN/GaN superlattices for near-infrared intersubband transitions

C. Bayram; N. Péré-laperne; R. McClintock; B. Fain; M. Razeghi

Appl. Phys. Lett. 94, 121902 (2009) https://doi.org/10.1063/1.3104857

Abstract

View articletitled, Pulsed metal-organic chemical vapor deposition of high-quality AlN/GaN superlattices for near-infrared intersubband transitions

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On the anisotropic shear resistance of hard transition metal nitrides TMN $(TM = Ti, Zr, Hf)$

R. F. Zhang; S. H. Sheng; S. Veprek

Appl. Phys. Lett. 94, 121903 (2009) https://doi.org/10.1063/1.3105990

Abstract

View articletitled, On the anisotropic shear resistance of hard transition metal nitrides TMN <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mo>(</mo><mrow><mtext>TM</mtext><mo>=</mo><mtext>Ti</mtext><mo>,</mo><mtext> </mtext><mtext>Zr</mtext><mo>,</mo><mtext> </mtext><mtext>Hf</mtext></mrow><mo>)</mo></mrow></mrow></math>

Supplementary Material

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Correlations between elastic moduli and molar volume in metallic glasses

J. Q. Wang; W. H. Wang; H. B. Yu; H. Y. Bai

Appl. Phys. Lett. 94, 121904 (2009) https://doi.org/10.1063/1.3106110

Abstract

View articletitled, Correlations between elastic moduli and molar volume in metallic glasses

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Conditions to cancel the laser polarization dependence of a subwavelength tip

J. Houard; A. Vella; F. Vurpillot; B. Deconihout

Appl. Phys. Lett. 94, 121905 (2009) https://doi.org/10.1063/1.3095829

Abstract

View articletitled, Conditions to cancel the laser polarization dependence of a subwavelength tip

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Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy

Scott A. Newman; Derrick S. Kamber; Troy J. Baker; Yuan Wu; Feng Wu; Zhen Chen; Shuji Namakura; James S. Speck; Steven P. DenBaars

Appl. Phys. Lett. 94, 121906 (2009) https://doi.org/10.1063/1.3089253

Abstract

View articletitled, Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy

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Growth of deformation twins in room-temperature rolled nanocrystalline nickel

X. Y. Zhang; X. L. Wu; A. W. Zhu

Appl. Phys. Lett. 94, 121907 (2009) https://doi.org/10.1063/1.3104858

Abstract

View articletitled, Growth of deformation twins in room-temperature rolled nanocrystalline nickel

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Introduction of molecular scale porosity into semicrystalline polymer thin films using supercritical carbon dioxide

Peter Gin; Mitsunori Asada; Maya K. Endoh; Cynthia Gedelian; Toh-Ming Lu; Tadanori Koga

Appl. Phys. Lett. 94, 121908 (2009) https://doi.org/10.1063/1.3104851

Abstract

View articletitled, Introduction of molecular scale porosity into semicrystalline polymer thin films using supercritical carbon dioxide

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Polarization field mapping of ${Al}_{0.85} {In}_{0.15} N / AlN / GaN$ heterostructure

Lin Zhou; David A. Cullen; David J. Smith; Martha R. McCartney; Anas Mouti; M. Gonschorek; E. Feltin; J. F. Carlin; N. Grandjean

Appl. Phys. Lett. 94, 121909 (2009) https://doi.org/10.1063/1.3108084

Abstract

View articletitled, Polarization field mapping of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Al</mtext></mrow><mrow><mn>0.85</mn></mrow></msub><msub><mrow><mtext>In</mtext></mrow><mrow><mn>0.15</mn></mrow></msub><mtext>N</mtext><mo>/</mo><mtext>AlN</mtext><mo>/</mo><mtext>GaN</mtext></mrow></math> heterostructure

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Formation energies of antisite defects in $Y_{3} {Al}_{5} O_{12}$ ⁠: A first-principles study

Bo Liu; Mu Gu; Xiaolin Liu; Shiming Huang; Chen Ni

Appl. Phys. Lett. 94, 121910 (2009) https://doi.org/10.1063/1.3109799

Abstract

View articletitled, Formation energies of antisite defects in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mtext>Y</mtext><mn>3</mn></msub><msub><mrow><mtext>Al</mtext></mrow><mn>5</mn></msub><msub><mtext>O</mtext><mrow><mn>12</mn></mrow></msub></mrow></math>⁠: A first-principles study

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Electron transport properties of irradiated polyimide thin films in single track regime

Pandiyan Murugaraj; David Mainwaring; Rainer Siegele

Appl. Phys. Lett. 94, 122101 (2009) https://doi.org/10.1063/1.3106602

Abstract

View articletitled, Electron transport properties of irradiated polyimide thin films in single track regime

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Polarity-dependent photoemission spectra of wurtzite-type zinc oxide

Naoki Ohashi; Yutaka Adachi; Takeo Ohsawa; Kenji Matsumoto; Isao Sakaguchi; Hajime Haneda; Shigenori Ueda; Hideki Yoshikawa; Keisuke Kobayashi

Appl. Phys. Lett. 94, 122102 (2009) https://doi.org/10.1063/1.3103271

Abstract

View articletitled, Polarity-dependent photoemission spectra of wurtzite-type zinc oxide

Supplementary Material

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Thermoelectric properties of tetrahedrally bonded wide-gap stannite compounds ${Cu}_{2} {ZnSn}_{1 - x} {In}_{x} {Se}_{4}$

X. Y. Shi; F. Q. Huang; M. L. Liu; L. D. Chen

Appl. Phys. Lett. 94, 122103 (2009) https://doi.org/10.1063/1.3103604

Abstract

View articletitled, Thermoelectric properties of tetrahedrally bonded wide-gap stannite compounds <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Cu</mtext></mrow><mn>2</mn></msub><msub><mrow><mtext>ZnSn</mtext></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mrow><mtext>In</mtext></mrow><mi>x</mi></msub><msub><mrow><mtext>Se</mtext></mrow><mn>4</mn></msub></mrow></math>

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Solid state nanogaps for differential measurements of molecular properties

Benjamin Moody; Gregory S. McCarty

Appl. Phys. Lett. 94, 122104 (2009) https://doi.org/10.1063/1.3103616

Abstract

View articletitled, Solid state nanogaps for differential measurements of molecular properties

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Fabrication and characterization of low temperature polycrystalline silicon thin film transistors by ink-jet printed nickel-mediated lateral crystallization

Jang-Sik Lee; Min-Sun Kim; Dongjo Kim; Yong-Mu Kim; Jooho Moon; Seung-Ki Joo

Appl. Phys. Lett. 94, 122105 (2009) https://doi.org/10.1063/1.3105983

Abstract

View articletitled, Fabrication and characterization of low temperature polycrystalline silicon thin film transistors by ink-jet printed nickel-mediated lateral crystallization

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Electrical spin injection into Si: A comparison between Fe/Si Schottky and $Fe / {Al}_{2} O_{3}$ tunnel contacts

G. Kioseoglou; A. T. Hanbicki; R. Goswami; O. M. J. van ‘t Erve; C. H. Li; G. Spanos; P. E. Thompson; B. T. Jonker

Appl. Phys. Lett. 94, 122106 (2009) https://doi.org/10.1063/1.3099049

Abstract

View articletitled, Electrical spin injection into Si: A comparison between Fe/Si Schottky and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mtext>Fe</mtext><mo>/</mo><msub><mrow><mtext>Al</mtext></mrow><mn>2</mn></msub><msub><mtext>O</mtext><mn>3</mn></msub></mrow></math> tunnel contacts

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Epitaxial ZnO films on (111) Si substrates with ${Sc}_{2} O_{3}$ buffer layers

W. Guo; M. B. Katz; C. T. Nelson; T. Heeg; D. G. Schlom; B. Liu; Y. Che; X. Q. Pan

Appl. Phys. Lett. 94, 122107 (2009) https://doi.org/10.1063/1.3095506

Abstract

View articletitled, Epitaxial ZnO films on (111) Si substrates with <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Sc</mtext></mrow><mn>2</mn></msub><msub><mtext>O</mtext><mn>3</mn></msub></mrow></math> buffer layers

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Nucleation mechanism of dislocation half-loop arrays in $4 H$ -silicon carbide homoepitaxial layers

N. Zhang; Y. Chen; Y. Zhang; M. Dudley; R. E. Stahlbush

Appl. Phys. Lett. 94, 122108 (2009) https://doi.org/10.1063/1.3105944

Abstract

View articletitled, Nucleation mechanism of dislocation half-loop arrays in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>4</mn><mi>H</mi></mrow></math>-silicon carbide homoepitaxial layers

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The conical shape filament growth model in unipolar resistance switching of ${TiO}_{2}$ thin film

Kyung Min Kim; Cheol Seong Hwang

Appl. Phys. Lett. 94, 122109 (2009) https://doi.org/10.1063/1.3108088

Abstract

View articletitled, The conical shape filament growth model in unipolar resistance switching of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>TiO</mtext></mrow><mn>2</mn></msub></mrow></math> thin film

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Direct imaging of GaN $p - n$ junction by cross-sectional scanning photoelectron microscopy and spectroscopy

Cheng-Tai Kuo (郭承泰); Hong-Mao Lee (李弘貿); Hung-Wei Shiu (許紘瑋); Chia-Hao Chen (陳家浩); Shangjr Gwo (果尚志)

Appl. Phys. Lett. 94, 122110 (2009) https://doi.org/10.1063/1.3109778

Abstract

View articletitled, Direct imaging of GaN <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>p</mi><mtext>-</mtext><mi>n</mi></mrow></math> junction by cross-sectional scanning photoelectron microscopy and spectroscopy

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Effects of edge passivation by hydrogen on electronic structure of armchair graphene nanoribbon and band gap engineering

Y. H. Lu; R. Q. Wu; L. Shen; M. Yang; Z. D. Sha; Y. Q. Cai; P. M. He; Y. P. Feng

Appl. Phys. Lett. 94, 122111 (2009) https://doi.org/10.1063/1.3103551

Abstract

View articletitled, Effects of edge passivation by hydrogen on electronic structure of armchair graphene nanoribbon and band gap engineering

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Vacancy phonon scattering in thermoelectric ${In}_{2} {Te}_{3} - InSb$ solid solutions

Yanzhong Pei; Donald T. Morelli

Appl. Phys. Lett. 94, 122112 (2009) https://doi.org/10.1063/1.3109788

Abstract

View articletitled, Vacancy phonon scattering in thermoelectric <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>In</mtext></mrow><mn>2</mn></msub><msub><mrow><mtext>Te</mtext></mrow><mn>3</mn></msub><mo>–</mo><mtext>InSb</mtext></mrow></math> solid solutions

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MAGNETISM AND SUPERCONDUCTIVITY

Transmission electron microscopy study on the crystallization and boron distribution of CoFeB/MgO/CoFeB magnetic tunnel junctions with various capping layers

Toyoo Miyajima; Takahiro Ibusuki; Shinjiro Umehara; Masashige Sato; Shin Eguchi; Mineharu Tsukada; Yuji Kataoka

Appl. Phys. Lett. 94, 122501 (2009) https://doi.org/10.1063/1.3106624

Abstract

View articletitled, Transmission electron microscopy study on the crystallization and boron distribution of CoFeB/MgO/CoFeB magnetic tunnel junctions with various capping layers

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Magnetization and magnetic anisotropy of metallophthalocyanine molecules from the first principles calculations

Junhua Wang; Yisheng Shi; Juexian Cao; Ruqian Wu

Appl. Phys. Lett. 94, 122502 (2009) https://doi.org/10.1063/1.3100783

Abstract

View articletitled, Magnetization and magnetic anisotropy of metallophthalocyanine molecules from the first principles calculations

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Epitaxial ${Mn}_{2.5} Ga$ thin films with giant perpendicular magnetic anisotropy for spintronic devices

Feng Wu; Shigemi Mizukami; Daisuke Watanabe; Hiroshi Naganuma; Mikihiko Oogane; Yasuo Ando; Terunobu Miyazaki

Appl. Phys. Lett. 94, 122503 (2009) https://doi.org/10.1063/1.3108085

Abstract

View articletitled, Epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Mn</mtext></mrow><mrow><mn>2.5</mn></mrow></msub><mtext>Ga</mtext></mrow></math> thin films with giant perpendicular magnetic anisotropy for spintronic devices

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Half-metallicity and Gilbert damping constant in ${Co}_{2} {Fe}_{x} {Mn}_{1 - x} Si$ Heusler alloys depending on the film composition

Takahide Kubota; Sumito Tsunegi; Mikihiko Oogane; Shigemi Mizukami; Terunobu Miyazaki; Hiroshi Naganuma; Yasuo Ando

Appl. Phys. Lett. 94, 122504 (2009) https://doi.org/10.1063/1.3105982

Abstract

View articletitled, Half-metallicity and Gilbert damping constant in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Co</mtext></mrow><mn>2</mn></msub><msub><mrow><mtext>Fe</mtext></mrow><mi>x</mi></msub><msub><mrow><mtext>Mn</mtext></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><mtext>Si</mtext></mrow></math> Heusler alloys depending on the film composition

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Magnetic semiconducting diode of $p {-Ge}_{1 - x} {Mn}_{x} / n -Ge$ layers on silicon substrate

S. Majumdar; A. K. Das; S. K. Ray

Appl. Phys. Lett. 94, 122505 (2009) https://doi.org/10.1063/1.3097235

Abstract

View articletitled, Magnetic semiconducting diode of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>p</mi><msub><mrow><mtext>-Ge</mtext></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mrow><mtext>Mn</mtext></mrow><mi>x</mi></msub><mo>/</mo><mi>n</mi><mtext>-Ge</mtext></mrow></math> layers on silicon substrate

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Enhancement of synchronized vortex lattice motion in hybrid magnetic/amorphous superconducting nanostructures

D. Perez de Lara; A. A. Alija; E. M. Gonzalez; J. I. Martin; M. Velez; J. M. Colino; J. V. Anguita; J. L. Vicent

Appl. Phys. Lett. 94, 122506 (2009) https://doi.org/10.1063/1.3103560

Abstract

View articletitled, Enhancement of synchronized vortex lattice motion in hybrid magnetic/amorphous superconducting nanostructures

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Enhanced magnetic properties of FeCo ribbons nanocrystallized in magnetic field

P. Marín; A. Hernando

Appl. Phys. Lett. 94, 122507 (2009) https://doi.org/10.1063/1.3091401

Abstract

View articletitled, Enhanced magnetic properties of FeCo ribbons nanocrystallized in magnetic field

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Reduction of the spin-torque critical current by partially canceling the free layer demagnetization field

Luqiao Liu; Takahiro Moriyama; D. C. Ralph; R. A. Buhrman

Appl. Phys. Lett. 94, 122508 (2009) https://doi.org/10.1063/1.3107262

Abstract

View articletitled, Reduction of the spin-torque critical current by partially canceling the free layer demagnetization field

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Magnetization reversal dominated by domain wall pinning in FePt based spin valves

A. P. Mihai; J. P. Attané; L. Vila; C. Beigné; J. C. Pillet; A. Marty

Appl. Phys. Lett. 94, 122509 (2009) https://doi.org/10.1063/1.3106605

Abstract

View articletitled, Magnetization reversal dominated by domain wall pinning in FePt based spin valves

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Enhanced spin injection and detection in spin valves with integrated tunnel barriers

Andreas Vogel; Jeannette Wulfhorst; Guido Meier

Appl. Phys. Lett. 94, 122510 (2009) https://doi.org/10.1063/1.3109787

Abstract

View articletitled, Enhanced spin injection and detection in spin valves with integrated tunnel barriers

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Reduction in critical current of current induced switching in an inhomogeneous nanomagnet

M. C. Wu; A. Aziz; M. Ali; C. H. Marrows; B. J. Hickey; Z. H. Barber; M. G. Blamire

Appl. Phys. Lett. 94, 122511 (2009) https://doi.org/10.1063/1.3109790

Abstract

View articletitled, Reduction in critical current of current induced switching in an inhomogeneous nanomagnet

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Qubit dispersive readout scheme with a microstrip superconducting quantum interference device amplifier

S. Michotte

Appl. Phys. Lett. 94, 122512 (2009) https://doi.org/10.1063/1.3109793

Abstract

View articletitled, Qubit dispersive readout scheme with a microstrip superconducting quantum interference device amplifier

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DIELECTRICS AND FERROELECTRICITY

Charge-transition levels of oxygen vacancy as the origin of device instability in ${HfO}_{2}$ gate stacks through quasiparticle energy calculations

Eun-Ae Choi; K. J. Chang

Appl. Phys. Lett. 94, 122901 (2009) https://doi.org/10.1063/1.3106643

Abstract

View articletitled, Charge-transition levels of oxygen vacancy as the origin of device instability in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>HfO</mtext></mrow><mn>2</mn></msub></mrow></math> gate stacks through quasiparticle energy calculations

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In situ investigation of the stability field and relaxation behavior of nanodomain structures in morphotropic $Pb [{Zr}_{1 - x} {Ti}_{x}] O_{3}$ under variations in electric field and temperature

Kristin A. Schönau; Michael Knapp; Mario Maglione; Hartmut Fuess

Appl. Phys. Lett. 94, 122902 (2009) https://doi.org/10.1063/1.3098073

Abstract

View articletitled, In situ investigation of the stability field and relaxation behavior of nanodomain structures in morphotropic <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mtext>Pb</mtext><mrow><mo>[</mo><mrow><msub><mrow><mtext>Zr</mtext></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mrow><mtext>Ti</mtext></mrow><mi>x</mi></msub></mrow><mo>]</mo></mrow><msub><mtext>O</mtext><mn>3</mn></msub></mrow></math> under variations in electric field and temperature

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Colossal dielectric constant up to gigahertz at room temperature

S. Krohns; P. Lunkenheimer; Ch. Kant; A. V. Pronin; H. B. Brom; A. A. Nugroho; M. Diantoro; A. Loidl

Appl. Phys. Lett. 94, 122903 (2009) https://doi.org/10.1063/1.3105993

Abstract

View articletitled, Colossal dielectric constant up to gigahertz at room temperature

Supplementary Material

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Temperature- and field-dependent leakage current of epitaxial ${YMnO}_{3} / GaN$ heterostructure

H. Wu; J. Yuan; T. Peng; Y. Pan; T. Han; C. Liu

Appl. Phys. Lett. 94, 122904 (2009) https://doi.org/10.1063/1.3106635

Abstract

View articletitled, Temperature- and field-dependent leakage current of epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>YMnO</mtext></mrow><mn>3</mn></msub><mo>/</mo><mtext>GaN</mtext></mrow></math> heterostructure

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Systematic study on work-function-shift in metal/Hf-based high- $k$ gate stacks

Yuki Kita; Shinichi Yoshida; Takuji Hosoi; Takayoshi Shimura; Kenji Shiraishi; Yasuo Nara; Keisaku Yamada; Heiji Watanabe

Appl. Phys. Lett. 94, 122905 (2009) https://doi.org/10.1063/1.3103314

Abstract

View articletitled, Systematic study on work-function-shift in metal/Hf-based high-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">k</mi></math> gate stacks

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Ultralow dielectric losses in pyrochlore films of the $PbO - MgO - {Nb}_{2} O_{5} - {TiO}_{2}$ system

X. H. Zhu; E. Defaÿ; A. Suhm; E. Fribourg-blanc; M. Aïd

Appl. Phys. Lett. 94, 122906 (2009) https://doi.org/10.1063/1.3106107

Abstract

View articletitled, Ultralow dielectric losses in pyrochlore films of the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mtext>PbO</mtext><mo>–</mo><mtext>MgO</mtext><mo>–</mo><msub><mrow><mtext>Nb</mtext></mrow><mn>2</mn></msub><msub><mtext>O</mtext><mn>5</mn></msub><mo>–</mo><msub><mrow><mtext>TiO</mtext></mrow><mn>2</mn></msub></mrow></math> system

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Metal-oxide-semiconductor capacitors with erbium oxide dielectrics on ${In}_{0.53} {Ga}_{0.47} As$ channels

Yoontae Hwang; Mark A. Wistey; Joël Cagnon; Roman Engel-Herbert; Susanne Stemmer

Appl. Phys. Lett. 94, 122907 (2009) https://doi.org/10.1063/1.3106618

Abstract

View articletitled, Metal-oxide-semiconductor capacitors with erbium oxide dielectrics on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>In</mtext></mrow><mrow><mn>0.53</mn></mrow></msub><msub><mrow><mtext>Ga</mtext></mrow><mrow><mn>0.47</mn></mrow></msub><mtext>As</mtext></mrow></math> channels

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Domain growth dynamics in single-domain-like ${BiFeO}_{3}$ thin films

Y. C. Chen (陳宜君); Q. R. Lin (林其叡); Y. H. Chu (朱英豪)

Appl. Phys. Lett. 94, 122908 (2009) https://doi.org/10.1063/1.3109779

Abstract

View articletitled, Domain growth dynamics in single-domain-like <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>BiFeO</mtext></mrow><mn>3</mn></msub></mrow></math> thin films

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High piezoelectricity of $Pb (Zr, Ti) O_{3}$ -based ternary compound thin films on silicon substrates

Tao Zhang; Kiyotaka Wasa; Shu-yi Zhang; Zhao-jiang Chen; Feng-mei Zhou; Zhong-ning Zhang; Yue-tao Yang

Appl. Phys. Lett. 94, 122909 (2009) https://doi.org/10.1063/1.3103553

Abstract

View articletitled, High piezoelectricity of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mtext>Pb</mtext><mrow><mo>(</mo><mrow><mtext>Zr</mtext><mo>,</mo><mtext>Ti</mtext></mrow><mo>)</mo></mrow><msub><mtext>O</mtext><mn>3</mn></msub></mrow></math>-based ternary compound thin films on silicon substrates

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NANOSCALE SCIENCE AND DESIGN

Room temperature spontaneous emission enhancement from quantum dots in photonic crystal slab cavities in the telecommunications C band

R. Hostein; R. Braive; M. Larqué; K.-H. Lee; A. Talneau; L. Le Gratiet; I. Robert-Philip; I. Sagnes; A. Beveratos

Appl. Phys. Lett. 94, 123101 (2009) https://doi.org/10.1063/1.3104855

Abstract

View articletitled, Room temperature spontaneous emission enhancement from quantum dots in photonic crystal slab cavities in the telecommunications C band

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Resonant behavior observed in electron field emission from acid functionalized multiwall carbon nanotubes

S. M. Lyth; S. R. P. Silva

Appl. Phys. Lett. 94, 123102 (2009) https://doi.org/10.1063/1.3094755

Abstract

View articletitled, Resonant behavior observed in electron field emission from acid functionalized multiwall carbon nanotubes

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High-performance, fully transparent, and flexible zinc-doped indium oxide nanowire transistors

W. F. Zhang; Z. B. He; G. D. Yuan; J. S. Jie; L. B. Luo; X. J. Zhang; Z. H. Chen; C. S. Lee; W. J. Zhang; S. T. Lee

Appl. Phys. Lett. 94, 123103 (2009) https://doi.org/10.1063/1.3100194

Abstract

View articletitled, High-performance, fully transparent, and flexible zinc-doped indium oxide nanowire transistors

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Coherent diffraction tomography of nanoislands from grazing-incidence small-angle x-ray scattering

O. M. Yefanov; A. V. Zozulya; I. A. Vartanyants; J. Stangl; C. Mocuta; T. H. Metzger; G. Bauer; T. Boeck; M. Schmidbauer

Appl. Phys. Lett. 94, 123104 (2009) https://doi.org/10.1063/1.3103246

Abstract

View articletitled, Coherent diffraction tomography of nanoislands from grazing-incidence small-angle x-ray scattering

Supplementary Material

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Size and composition dependent electronic and optical properties of ${Ga}_{x} {Al}_{1 - x} As$ and ${Al}_{x} {Ga}_{1 - x} As$ alloyed nanocrystals

Chanchal Ghosh; Sougata Pal; Pranab Sarkar; Thomas Frauenheim

Appl. Phys. Lett. 94, 123105 (2009) https://doi.org/10.1063/1.3109783

Abstract

View articletitled, Size and composition dependent electronic and optical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Ga</mtext></mrow><mi>x</mi></msub><msub><mrow><mtext>Al</mtext></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><mtext>As</mtext></mrow></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Al</mtext></mrow><mi>x</mi></msub><msub><mrow><mtext>Ga</mtext></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><mtext>As</mtext></mrow></math> alloyed nanocrystals

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Directional light extraction enhancement from GaN-based film-transferred photonic crystal light-emitting diodes

Chun-Feng Lai; Chia-Hsin Chao; Hao-Chung Kuo; His-Hsuan Yen; Chia-En Lee; Wen-Yung Yeh

Appl. Phys. Lett. 94, 123106 (2009) https://doi.org/10.1063/1.3106109

Abstract

View articletitled, Directional light extraction enhancement from GaN-based film-transferred photonic crystal light-emitting diodes

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Atomic layer deposition of ${Cu}_{2} S$ for future application in photovoltaics

Alex B. F. Martinson; Jeffrey W. Elam; Michael J. Pellin

Appl. Phys. Lett. 94, 123107 (2009) https://doi.org/10.1063/1.3094131

Abstract

View articletitled, Atomic layer deposition of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Cu</mtext></mrow><mn>2</mn></msub><mtext>S</mtext></mrow></math> for future application in photovoltaics

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Room-temperature stability of Pt nanogaps formed by self-breaking

F. Prins; T. Hayashi; B. J. A. de Vos van Steenwijk; B. Gao; E. A. Osorio; K. Muraki; H. S. J. van der Zant

Appl. Phys. Lett. 94, 123108 (2009) https://doi.org/10.1063/1.3109784

Abstract

View articletitled, Room-temperature stability of Pt nanogaps formed by self-breaking

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Periodic alignment of Si quantum dots on hafnium oxide coated single wall carbon nanotubes

Mario Olmedo; Alfredo A. Martinez-Morales; Gang Liu; Emre Yengel; Cengiz S. Ozkan; Chun Ning Lau; Mihrimah Ozkan; Jianlin Liu

Appl. Phys. Lett. 94, 123109 (2009) https://doi.org/10.1063/1.3103547

Abstract

View articletitled, Periodic alignment of Si quantum dots on hafnium oxide coated single wall carbon nanotubes

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Dielectric breakdown of MgO magnetic tunnel junctions

D. V. Dimitrov; Zheng Gao; Xiaobin Wang; Wonjoon Jung; Xiaohua Lou; Olle G. Heinonen

Appl. Phys. Lett. 94, 123110 (2009) https://doi.org/10.1063/1.3109792

Abstract

View articletitled, Dielectric breakdown of MgO magnetic tunnel junctions

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Fast determination of phases in ${Li}_{x} {FePO}_{4}$ using low losses in electron energy-loss spectroscopy

P. Moreau; V. Mauchamp; F. Pailloux; F. Boucher

Appl. Phys. Lett. 94, 123111 (2009) https://doi.org/10.1063/1.3109777

Abstract

View articletitled, Fast determination of phases in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Li</mtext></mrow><mi>x</mi></msub><msub><mrow><mtext>FePO</mtext></mrow><mn>4</mn></msub></mrow></math> using low losses in electron energy-loss spectroscopy

Supplementary Material

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Mechanisms of interdot coupling in (In,Ga)As/GaAs quantum dot arrays

Yu. I. Mazur; V. G. Dorogan; E. Marega, Jr.; G. G. Tarasov; D. F. Cesar; V. Lopez-Richard; G. E. Marques; G. J. Salamo

Appl. Phys. Lett. 94, 123112 (2009) https://doi.org/10.1063/1.3103312

Abstract

View articletitled, Mechanisms of interdot coupling in (In,Ga)As/GaAs quantum dot arrays

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Anisotropic electron spins in self-assembled quantum dots

Weidong Sheng

Appl. Phys. Lett. 94, 123113 (2009) https://doi.org/10.1063/1.3109789

Abstract

View articletitled, Anisotropic electron spins in self-assembled quantum dots

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ORGANIC ELECTRONICS AND PHOTONICS

Interface resistivity and lifetime of thin film transistors exposed to ambient air

Andraž Petrović; Gvido Bratina

Appl. Phys. Lett. 94, 123301 (2009) https://doi.org/10.1063/1.3105984

Abstract

View articletitled, Interface resistivity and lifetime of thin film transistors exposed to ambient air

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Organic solar cells using few-walled carbon nanotubes electrode controlled by the balance between sheet resistance and the transparency

Yiyu Feng; Xiaohui Ju; Wei Feng; Hongbo Zhang; Yingwen Cheng; Jie Liu; Akihiko Fujii; Masanori Ozaki; Katsumi Yoshino

Appl. Phys. Lett. 94, 123302 (2009) https://doi.org/10.1063/1.3103557

Abstract

View articletitled, Organic solar cells using few-walled carbon nanotubes electrode controlled by the balance between sheet resistance and the transparency

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Nanoparticle-induced resonant tunneling behaviors in small molecule organic light-emitting devices

Tianhang Zheng; Wallace C. H. Choy; Yuxiu Sun

Appl. Phys. Lett. 94, 123303 (2009) https://doi.org/10.1063/1.3099038

Abstract

View articletitled, Nanoparticle-induced resonant tunneling behaviors in small molecule organic light-emitting devices

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Determining ionizing radiation using sensors based on organic semiconducting material

Harshil N. Raval; Shree Prakash Tiwari; Ramesh R. Navan; V. Ramgopal Rao

Appl. Phys. Lett. 94, 123304 (2009) https://doi.org/10.1063/1.3107266

Abstract

View articletitled, Determining ionizing radiation using sensors based on organic semiconducting material

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Rapid prototyping encapsulation for polymer light-emitting lasers

Luana Persano; Andrea Camposeo; Pompilio Del Carro; Pierpaolo Solaro; Roberto Cingolani; Patrizia Boffi; Dario Pisignano

Appl. Phys. Lett. 94, 123305 (2009) https://doi.org/10.1063/1.3100406

Abstract

View articletitled, Rapid prototyping encapsulation for polymer light-emitting lasers

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Effectiveness of $p$ -dopants in an organic hole transporting material

Jae-Hyun Lee; Dong-Seok Leem; Hyong-Jun Kim; Jang-Joo Kim

Appl. Phys. Lett. 94, 123306 (2009) https://doi.org/10.1063/1.3107267

Abstract

View articletitled, Effectiveness of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-dopants in an organic hole transporting material

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Electroluminescence from a pentacene based ambipolar organic field-effect transistor

Martin Schidleja; Christian Melzer; Heinz von Seggern

Appl. Phys. Lett. 94, 123307 (2009) https://doi.org/10.1063/1.3107268

Abstract

View articletitled, Electroluminescence from a pentacene based ambipolar organic field-effect transistor

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Micro-organic single crystalline phototransistors of 7,7,8,8-tetracyanoquinodimethane and tetrathiafulvalene

Hui Jiang; Xianjin Yang; Zhenduo Cui; Yongchang Liu; Hongxiang Li; Wenping Hu

Appl. Phys. Lett. 94, 123308 (2009) https://doi.org/10.1063/1.3109785

Abstract

View articletitled, Micro-organic single crystalline phototransistors of 7,7,8,8-tetracyanoquinodimethane and tetrathiafulvalene

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DEVICE PHYSICS

Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric

Arun Suresh; Steven Novak; Patrick Wellenius; Veena Misra; John F. Muth

Appl. Phys. Lett. 94, 123501 (2009) https://doi.org/10.1063/1.3106629

Abstract

View articletitled, Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric

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Metal-semiconductor-metal ${TiO}_{2}$ ultraviolet detectors with Ni electrodes

Xiangzi Kong; Caixia Liu; Wei Dong; Xindong Zhang; Chen Tao; Liang Shen; Jingran Zhou; Yongfeng Fei; Shengping Ruan

Appl. Phys. Lett. 94, 123502 (2009) https://doi.org/10.1063/1.3103288

Abstract

View articletitled, Metal-semiconductor-metal <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>TiO</mtext></mrow><mn>2</mn></msub></mrow></math> ultraviolet detectors with Ni electrodes

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Reliability analysis of the low resistance state stability of ${Ge}_{0.3} {Se}_{0.7}$ based solid electrolyte nonvolatile memory cells

R. Soni; P. Meuffels; H. Kohlstedt; C. Kügeler; R. Waser

Appl. Phys. Lett. 94, 123503 (2009) https://doi.org/10.1063/1.3103555

Abstract

View articletitled, Reliability analysis of the low resistance state stability of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Ge</mtext></mrow><mrow><mn>0.3</mn></mrow></msub><msub><mrow><mtext>Se</mtext></mrow><mrow><mn>0.7</mn></mrow></msub></mrow></math> based solid electrolyte nonvolatile memory cells

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Intradot dynamics of InAs quantum dot based electroabsorbers

Tomasz Piwonski; Jaroslaw Pulka; Gillian Madden; Guillaume Huyet; John Houlihan; Evgeny A. Viktorov; Thomas Erneux; Paul Mandel

Appl. Phys. Lett. 94, 123504 (2009) https://doi.org/10.1063/1.3106633

Abstract

View articletitled, Intradot dynamics of InAs quantum dot based electroabsorbers

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Spin selector by ferroelectric triple barrier resonant tunneling diode

M. K. Li; T. W. Kang; N. M. Kim

Appl. Phys. Lett. 94, 123505 (2009) https://doi.org/10.1063/1.3110048

Abstract

View articletitled, Spin selector by ferroelectric triple barrier resonant tunneling diode

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APPLIED BIOPHYSICS

Terahertz pulsed imaging of frozen biological tissues

Hiromichi Hoshina; Aya Hayashi; Norio Miyoshi; Fumiaki Miyamaru; Chiko Otani

Appl. Phys. Lett. 94, 123901 (2009) https://doi.org/10.1063/1.3106616

Abstract

View articletitled, Terahertz pulsed imaging of frozen biological tissues

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INTERDISCIPLINARY AND GENERAL PHYSICS

Investigation of hepatic fibrosis in rats with x-ray diffraction enhanced imaging

Hui Li; Lu Zhang; Xueyan Wang; Tailing Wang; Baoen Wang; Xinyan Zhao; Shuqian Luo

Appl. Phys. Lett. 94, 124101 (2009) https://doi.org/10.1063/1.3104860

Abstract

View articletitled, Investigation of hepatic fibrosis in rats with x-ray diffraction enhanced imaging

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Reverse osmosis desalination: Modeling and experiment

Naum Fraidenraich; Olga C. Vilela; Gilmário A. Lima; Jeffrey M. Gordon

Appl. Phys. Lett. 94, 124102 (2009) https://doi.org/10.1063/1.3109795

Abstract

View articletitled, Reverse osmosis desalination: Modeling and experiment

Supplementary Material

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ERRATA

Erratum: “Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy” [Appl. Phys. Lett. 94, 052101 (2009)]

A. L. Yang; H. P. Song; X. L. Liu; H. Y. Wei; Y. Guo; G. L. Zheng; C. M. Jiao; S. Y. Yang; Q. S. Zhu; Z. G. Wang

Appl. Phys. Lett. 94, 129901 (2009) https://doi.org/10.1063/1.3114995

Extract

View articletitled, Erratum: “Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy” [Appl. Phys. Lett. 94, 052101 (2009)]

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Retraction: “Observation of numerous $E_{2}$ mode phonon replicas in the room temperature photoluminescence spectra of ZnO nanowires: Evidence of strong deformation potential electron-phonon coupling” [Appl. Phys. Lett. 89, 143121 (2006)]

S. Ramanathan; S. Bandyopadhyay; L. K. Hussey; M. Muñoz

Appl. Phys. Lett. 94, 129902 (2009) https://doi.org/10.1063/1.3112563

Extract

View articletitled, Retraction: “Observation of numerous <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>E</mi><mn>2</mn></msub></mrow></math> mode phonon replicas in the room temperature photoluminescence spectra of ZnO nanowires: Evidence of strong deformation potential electron-phonon coupling” [Appl. Phys. Lett. 89, 143121 (2006)]

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Erratum: “Ferromagnetic spin-correlations in strained ${LaCoO}_{3}$ thin films” [Appl. Phys. Lett. 93, 212501 (2008)]

J. W. Freeland; J. X. Ma; J. Shi

Appl. Phys. Lett. 94, 129903 (2009) https://doi.org/10.1063/1.3097551

Extract

View articletitled, Erratum: “Ferromagnetic spin-correlations in strained <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>LaCoO</mtext></mrow><mn>3</mn></msub></mrow></math> thin films” [Appl. Phys. Lett. 93, 212501 (2008)]

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

ORGANIC ELECTRONICS AND PHOTONICS

DEVICE PHYSICS

APPLIED BIOPHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

ERRATA

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