Skip Nav Destination
Issues
23 July 2007
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
Lasing characteristics of a GaN photonic crystal nanocavity light source
Chun-Feng Lai; Peichen Yu; Te-Chung Wang; Hao-Chung Kuo; Tien-Chang Lu; Shing-Chung Wang; Chao-Kuei Lee
Appl. Phys. Lett. 91, 041101 (2007)
https://doi.org/10.1063/1.2759467
Laser microfixation of highly ordered aggregates on a glass substrate
Appl. Phys. Lett. 91, 041102 (2007)
https://doi.org/10.1063/1.2759468
Spatially confined light output of a crystalline zinc oxide nanonet laser
Appl. Phys. Lett. 91, 041103 (2007)
https://doi.org/10.1063/1.2759473
Geiger-mode operation of back-illuminated GaN avalanche photodiodes
Appl. Phys. Lett. 91, 041104 (2007)
https://doi.org/10.1063/1.2759980
Switchable nonlinear metalloferroelectric photonic crystals
E. Mishina; A. Zaitsev; N. Ilyin; N. Sherstyuk; A. Sigov; Yu. Golovko; V. Muhortov; A. Kolesnikov; Yu. Lozovik; M. Yemtsova; Th. Rasing
Appl. Phys. Lett. 91, 041107 (2007)
https://doi.org/10.1063/1.2762284
Tunable and movable liquid microlens in situ fabricated within microfluidic channels
Appl. Phys. Lett. 91, 041109 (2007)
https://doi.org/10.1063/1.2759469
Polarization control of vertical-cavity surface-emitting lasers using autocloned photonic crystal polarizer
Appl. Phys. Lett. 91, 041110 (2007)
https://doi.org/10.1063/1.2763972
In-plane Littrow lasing of broad photonic crystal waveguides
Appl. Phys. Lett. 91, 041111 (2007)
https://doi.org/10.1063/1.2763977
Measurement of carrier lifetime and interface recombination velocity in Si–Ge waveguides
Appl. Phys. Lett. 91, 041112 (2007)
https://doi.org/10.1063/1.2760133
Loss reduction in fully contacted organic laser waveguides using modes
Appl. Phys. Lett. 91, 041113 (2007)
https://doi.org/10.1063/1.2757598
High speed single photon detection in the near infrared
Appl. Phys. Lett. 91, 041114 (2007)
https://doi.org/10.1063/1.2760135
Temperature-power dependence of catastrophic optical damage in AlGaInP laser diodes
M. Bou Sanayeh; P. Brick; W. Schmid; B. Mayer; M. Müller; M. Reufer; K. Streubel; J. W. Tomm; G. Bacher
Appl. Phys. Lett. 91, 041115 (2007)
https://doi.org/10.1063/1.2760143
Electrically excited oxygen generator produces 30% transfer from into with 40% electrical efficiency
Appl. Phys. Lett. 91, 041116 (2007)
https://doi.org/10.1063/1.2764555
Near-field optical study of highly dense laterally coupled InAs single quantum dots
Appl. Phys. Lett. 91, 041117 (2007)
https://doi.org/10.1063/1.2760151
Deoxyribonucleic acid-based photochromic material for fast dynamic holography
Appl. Phys. Lett. 91, 041118 (2007)
https://doi.org/10.1063/1.2760169
PLASMAS AND ELECTRICAL DISCHARGES
Controlled formation of metallic nanoballs during plasma electrolysis
Appl. Phys. Lett. 91, 041501 (2007)
https://doi.org/10.1063/1.2760042
Microwave guiding and intense plasma generation at subcutoff dimensions for focused ion beams
Appl. Phys. Lett. 91, 041503 (2007)
https://doi.org/10.1063/1.2764445
Ion generation from a solidified Ne target for a laser ion source
Appl. Phys. Lett. 91, 041504 (2007)
https://doi.org/10.1063/1.2760147
Measurements of and velocities near the sheath boundary of Ar–Xe plasma using two diode lasers
Appl. Phys. Lett. 91, 041505 (2007)
https://doi.org/10.1063/1.2760149
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
Bulk metallic glasses based on binary cerium and lanthanum elements
Appl. Phys. Lett. 91, 041901 (2007)
https://doi.org/10.1063/1.2766656
Growth of polycrystalline thin films using a radio frequency-cracked Se-radical beam source and application for photovoltaic devices
Shogo Ishizuka; Hajime Shibata; Akimasa Yamada; Paul Fons; Keiichiro Sakurai; Koji Matsubara; Shigeru Niki
Appl. Phys. Lett. 91, 041902 (2007)
https://doi.org/10.1063/1.2766669
Measurement of the clustering energy for manganese silicide islands on Si(001) by Ostwald ripening
Appl. Phys. Lett. 91, 041903 (2007)
https://doi.org/10.1063/1.2766681
Electrochemical corrosion behavior of a Zr-based bulk-metallic glass
Appl. Phys. Lett. 91, 041904 (2007)
https://doi.org/10.1063/1.2762282
Annealing effects on the optical properties of a GaInNAs double barrier quantum well infrared photodetector
Appl. Phys. Lett. 91, 041905 (2007)
https://doi.org/10.1063/1.2762290
Sequential thermal treatments of SiC in NO and : Atomic transport and electrical characteristics
Appl. Phys. Lett. 91, 041906 (2007)
https://doi.org/10.1063/1.2763966
Self-propagating high temperature synthesis of yellow-emitting phosphors for white light-emitting diodes
Appl. Phys. Lett. 91, 041908 (2007)
https://doi.org/10.1063/1.2760038
Nonlinear optical properties of semiconductor quantum wells under intense terahertz radiation
Appl. Phys. Lett. 91, 041909 (2007)
https://doi.org/10.1063/1.2760040
Evolution process of luminescent Si nanostructures in annealed thin films probed by photoconductivity measurements
Appl. Phys. Lett. 91, 041910 (2007)
https://doi.org/10.1063/1.2764441
Near-infrared intersubband absorption in nonpolar cubic superlattices
Appl. Phys. Lett. 91, 041911 (2007)
https://doi.org/10.1063/1.2764557
Excimer laser fabrication of microbumps on platinum thin films
Appl. Phys. Lett. 91, 041912 (2007)
https://doi.org/10.1063/1.2760148
Change of the kinetics of solidification and microstructure formation induced by convection in the Ni–Al system
Appl. Phys. Lett. 91, 041913 (2007)
https://doi.org/10.1063/1.2760154
Nonpolar AlBN and films grown on SiC substrates
Appl. Phys. Lett. 91, 041914 (2007)
https://doi.org/10.1063/1.2766665
Effect of internal electrostatic fields in InGaN quantum wells on the properties of green light emitting diodes
Appl. Phys. Lett. 91, 041915 (2007)
https://doi.org/10.1063/1.2760160
All-optical reversible switching of local magnetization
Appl. Phys. Lett. 91, 041916 (2007)
https://doi.org/10.1063/1.2760163
Dielectric functions and electronic structure of films on InP
Appl. Phys. Lett. 91, 041917 (2007)
https://doi.org/10.1063/1.2766682
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
Energy gaps in zero-dimensional graphene nanoribbons
Appl. Phys. Lett. 91, 042101 (2007)
https://doi.org/10.1063/1.2761531
Effect of interfacial oxynitride layer on the band alignment and thermal stability of films on SiGe
Appl. Phys. Lett. 91, 042102 (2007)
https://doi.org/10.1063/1.2762277
Detection of field-induced single-acceptor ionization in Si by single-hole-tunneling transistor
Appl. Phys. Lett. 91, 042103 (2007)
https://doi.org/10.1063/1.2762278
Mobility enhancement in strained quantum wells
Appl. Phys. Lett. 91, 042104 (2007)
https://doi.org/10.1063/1.2762279
and diffusion barriers for contacts to
Appl. Phys. Lett. 91, 042105 (2007)
https://doi.org/10.1063/1.2762280
Fully epitaxial junction and its tunnel magnetoresistance
Appl. Phys. Lett. 91, 042106 (2007)
https://doi.org/10.1063/1.2762297
Bimetallic oxide nanoparticles as charge trapping layer for nonvolatile memory device applications
Appl. Phys. Lett. 91, 042107 (2007)
https://doi.org/10.1063/1.2763962
Aligned carbon nanotubes for through-wafer interconnects
Appl. Phys. Lett. 91, 042108 (2007)
https://doi.org/10.1063/1.2759989
Improvement of Pt Schottky contacts to -type ZnO by KrF excimer laser irradiation
Appl. Phys. Lett. 91, 042109 (2007)
https://doi.org/10.1063/1.2764436
Study of InAs quantum dots in heterostructure by ballistic electron emission microscopy/spectroscopy
Appl. Phys. Lett. 91, 042110 (2007)
https://doi.org/10.1063/1.2760134
Ni-imprint induced solid-phase crystallization in (: 0–1) on insulator
Appl. Phys. Lett. 91, 042111 (2007)
https://doi.org/10.1063/1.2764447
Polarization-induced valence-band alignments at cation- and anion-polar heterojunctions
Appl. Phys. Lett. 91, 042112 (2007)
https://doi.org/10.1063/1.2764448
Organic thin-film transistors using suspended source/drain electrode structure
Appl. Phys. Lett. 91, 042113 (2007)
https://doi.org/10.1063/1.2760142
Fast electrical detection of Hg(II) ions with high electron mobility transistors
Hung-Ta Wang; B. S. Kang; T. F. Chancellor, Jr.; T. P. Lele; Y. Tseng; F. Ren; S. J. Pearton; W. J. Johnson; P. Rajagopal; J. C. Roberts; E. L. Piner; K. J. Linthicum
Appl. Phys. Lett. 91, 042114 (2007)
https://doi.org/10.1063/1.2764554
Degradation of hole injection at the contact between a conducting polymer and a fluorene copolymer
Appl. Phys. Lett. 91, 042116 (2007)
https://doi.org/10.1063/1.2760170
On the electric-dipole contribution to the valence-band offsets in semiconductor-oxide heterostructures
Appl. Phys. Lett. 91, 042117 (2007)
https://doi.org/10.1063/1.2760176
MAGNETISM AND SUPERCONDUCTIVITY
Formation of the Bi-2212 phase in a BiSrCaO thick film screen printed on substrate
Appl. Phys. Lett. 91, 042501 (2007)
https://doi.org/10.1063/1.2754639
Multicontact measurements of a superconducting Sn nanowire
Appl. Phys. Lett. 91, 042502 (2007)
https://doi.org/10.1063/1.2759471
Magnetodielectric effect in double perovskite thin films
Appl. Phys. Lett. 91, 042504 (2007)
https://doi.org/10.1063/1.2762292
Preparation of aligned nanorods and their steplike magnetization
Appl. Phys. Lett. 91, 042505 (2007)
https://doi.org/10.1063/1.2764443
Third-order intermodulation in two-pole -band microstrip filters
Appl. Phys. Lett. 91, 042506 (2007)
https://doi.org/10.1063/1.2764444
Slow relaxation of spin reorientation following ultrafast optical excitation
Appl. Phys. Lett. 91, 042508 (2007)
https://doi.org/10.1063/1.2760152
DIELECTRICS AND FERROELECTRICITY
Morphotropic phase boundary in : phase coexistence region and unusually large tetragonality
Appl. Phys. Lett. 91, 042903 (2007)
https://doi.org/10.1063/1.2766657
Gate oxide scaling down in metal-oxide-semiconductor capacitor using germanium interfacial passivation layer
Appl. Phys. Lett. 91, 042904 (2007)
https://doi.org/10.1063/1.2762291
High permittivity and low dielectric loss in ceramics with the nominal compositions of
Appl. Phys. Lett. 91, 042905 (2007)
https://doi.org/10.1063/1.2762293
Large ferroelectric polarization in antiferromagnetic epitaxial films
Appl. Phys. Lett. 91, 042906 (2007)
https://doi.org/10.1063/1.2763964
Sign reversals in the dielectric anisotropy as functions of temperature and frequency in phase
Appl. Phys. Lett. 91, 042907 (2007)
https://doi.org/10.1063/1.2763982
Observation of room-temperature ferroelectricity in tetragonal strontium titanate thin films on (001) substrates
Appl. Phys. Lett. 91, 042908 (2007)
https://doi.org/10.1063/1.2764437
Anomalous polarization switching in organic ferroelectric field effect transistors
Appl. Phys. Lett. 91, 042909 (2007)
https://doi.org/10.1063/1.2757092
NANOSCALE SCIENCE AND DESIGN
Electrically switchable nonreciprocal transmission of plasmonic nanorods with liquid crystal
Appl. Phys. Lett. 91, 043101 (2007)
https://doi.org/10.1063/1.2759463
Micropatterning metal electrode of organic light emitting devices using rapid polydimethylsiloxane lift-off
Appl. Phys. Lett. 91, 043102 (2007)
https://doi.org/10.1063/1.2759466
Shape transformation during overgrowth of quantum rings
Appl. Phys. Lett. 91, 043103 (2007)
https://doi.org/10.1063/1.2760191
Surface energy transfer from rhodamine 6G to gold nanoparticles: A spectroscopic ruler
Appl. Phys. Lett. 91, 043104 (2007)
https://doi.org/10.1063/1.2762283
Self-organized metal nanostructures through laser-interference driven thermocapillary convection
Appl. Phys. Lett. 91, 043105 (2007)
https://doi.org/10.1063/1.2762294
Stabilizing excited-state silicon nanoparticle by surface oxidation
Appl. Phys. Lett. 91, 043106 (2007)
https://doi.org/10.1063/1.2762296
Superior flexibility of super carbon nanotubes: Molecular dynamics simulations
Appl. Phys. Lett. 91, 043108 (2007)
https://doi.org/10.1063/1.2760039
Ink-jet printed ZnO nanowire field effect transistors
Appl. Phys. Lett. 91, 043109 (2007)
https://doi.org/10.1063/1.2760041
Microwave absorption properties of hollow microsphere/titania/-type Ba ferrite nanocomposites
Appl. Phys. Lett. 91, 043110 (2007)
https://doi.org/10.1063/1.2764440
Highly hydrophilic conversion on oriented thin films synthesized by a facile spin-coating method
Appl. Phys. Lett. 91, 043111 (2007)
https://doi.org/10.1063/1.2760132
Unconventional photoluminescence upconversion from PbS quantum dots
Appl. Phys. Lett. 91, 043112 (2007)
https://doi.org/10.1063/1.2760140
detection by adsorption induced work function changes in thin films
Appl. Phys. Lett. 91, 043113 (2007)
https://doi.org/10.1063/1.2760168
Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors
Appl. Phys. Lett. 91, 043114 (2007)
https://doi.org/10.1063/1.2766680
Resetting single nanoparticle structural phase with nanosecond pulses
Appl. Phys. Lett. 91, 043115 (2007)
https://doi.org/10.1063/1.2760174
DEVICE PHYSICS
dc electric field tunable bulk acoustic wave solidly mounted resonator using
Appl. Phys. Lett. 91, 043501 (2007)
https://doi.org/10.1063/1.2759464
quantum well waveguide optical isolator with wide wavelength operational bandwidth
Appl. Phys. Lett. 91, 043502 (2007)
https://doi.org/10.1063/1.2759465
Interaction of electron irradiation with nitrogen-related deep levels in InGaAsN
Appl. Phys. Lett. 91, 043503 (2007)
https://doi.org/10.1063/1.2759950
Hole-transporting-layer-free high-efficiency fluorescent blue organic light-emitting diodes
Appl. Phys. Lett. 91, 043504 (2007)
https://doi.org/10.1063/1.2759984
Ambipolar organic field-effect transistors based on a low band gap semiconductor with balanced hole and electron mobilities
Masayuki Chikamatsu; Takefumi Mikami; Jiro Chisaka; Yuji Yoshida; Reiko Azumi; Kiyoshi Yase; Akihiro Shimizu; Takashi Kubo; Yasushi Morita; Kazuhiro Nakasuji
Appl. Phys. Lett. 91, 043506 (2007)
https://doi.org/10.1063/1.2766696
Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with amorphous silicon interface passivation layer and thin gate oxide
F. Zhu; S. Koveshnikov; I. Ok; H. S. Kim; M. Zhang; T. Lee; G. Thareja; L. Yu; J. C. Lee; W. Tsai; V. Tokranov; M. Yakimov; S. Oktyabrsky
Appl. Phys. Lett. 91, 043507 (2007)
https://doi.org/10.1063/1.2762295
Effect of acceptor on efficiencies of exciplex-type organic light emitting diodes
Appl. Phys. Lett. 91, 043508 (2007)
https://doi.org/10.1063/1.2762298
Gate insulation and drain current saturation mechanism in metal-oxide-semiconductor high-electron-mobility transistors
G. Pozzovivo; J. Kuzmik; S. Golka; W. Schrenk; G. Strasser; D. Pogany; K. Čičo; M. Ťapajna; K. Fröhlich; J.-F. Carlin; M. Gonschorek; E. Feltin; N. Grandjean
Appl. Phys. Lett. 91, 043509 (2007)
https://doi.org/10.1063/1.2763956
Semiconducting polymer coated single wall nanotube field-effect transistors discriminate holes from electrons
Appl. Phys. Lett. 91, 043510 (2007)
https://doi.org/10.1063/1.2763961
Submicron pentacene-based organic thin film transistors on flexible substrates
Appl. Phys. Lett. 91, 043511 (2007)
https://doi.org/10.1063/1.2763973
Micromachined cascade virtual impactor with a flow rate distributor for wide range airborne particle classification
Appl. Phys. Lett. 91, 043512 (2007)
https://doi.org/10.1063/1.2763975
structure based on type-II strained layer superlattices
Appl. Phys. Lett. 91, 043514 (2007)
https://doi.org/10.1063/1.2760153
INTERDISCIPLINARY AND GENERAL PHYSICS
Photocatalytic nanoparticle deposition on nanodomain patterns via photovoltaic effect
Appl. Phys. Lett. 91, 044101 (2007)
https://doi.org/10.1063/1.2759472
Acquisition of a nuclear magnetic resonance signal using an electric field detection technique
Appl. Phys. Lett. 91, 044103 (2007)
https://doi.org/10.1063/1.2762276
Proximity electron lithography using permeable electron windows
Appl. Phys. Lett. 91, 044104 (2007)
https://doi.org/10.1063/1.2762281
Quantitative analysis of ternary vapor mixtures using a microcantilever-based electronic nose
Appl. Phys. Lett. 91, 044105 (2007)
https://doi.org/10.1063/1.2763965
COMMENTS
Response to “Comment on ‘Ultrathin low-temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition’” [Appl. Phys. Lett. 90, 092108 (2007)]
T. H. Loh; H. S. Nguyen; C. H. Tung; A. D. Trigg; G. Q. Lo; N. Balasubramanian; D. L. Kwong; S. Tripathy
Appl. Phys. Lett. 91, 046102 (2007)
https://doi.org/10.1063/1.2760137
Comment on “Size-dependent modifications of the Raman spectrum of rutile ” [Appl. Phys. Lett. 89, 163118 (2006)]
Appl. Phys. Lett. 91, 046103 (2007)
https://doi.org/10.1063/1.2759949
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Superconducting flip-chip devices using indium microspheres on Au-passivated Nb or NbN as under-bump metallization layer
Achintya Paradkar, Paul Nicaise, et al.