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LASERS, OPTICS, AND OPTOELECTRONICS

Three-dimensional nanoscale subsurface optical imaging of silicon circuits

E. Ramsay; K. A. Serrels; M. J. Thomson; A. J. Waddie; M. R. Taghizadeh; R. J. Warburton; D. T. Reid

Appl. Phys. Lett. 90, 131101 (2007) https://doi.org/10.1063/1.2716344

Abstract

View articletitled, Three-dimensional nanoscale subsurface optical imaging of silicon circuits

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Er:Yb-doped oxyfluoride silicate glass waveguide amplifier fabricated using femtosecond laser inscription

N. D. Psaila; R. R. Thomson; H. T. Bookey; A. K. Kar; N. Chiodo; R. Osellame; G. Cerullo; A. Jha; S. Shen

Appl. Phys. Lett. 90, 131102 (2007) https://doi.org/10.1063/1.2716866

Abstract

View articletitled, Er:Yb-doped oxyfluoride silicate glass waveguide amplifier fabricated using femtosecond laser inscription

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Simple voltage tunable liquid crystal laser

L. M. Blinov; G. Cipparrone; A. Mazzulla; P. Pagliusi; V. V. Lazarev; S. P. Palto

Appl. Phys. Lett. 90, 131103 (2007) https://doi.org/10.1063/1.2717083

Abstract

View articletitled, Simple voltage tunable liquid crystal laser

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Improved organic semiconductor lasers based on a mixed-order distributed feedback resonator design

C. Karnutsch; C. Pflumm; G. Heliotis; J. C. deMello; D. D. C. Bradley; J. Wang; T. Weimann; V. Haug; C. Gärtner; U. Lemmer

Appl. Phys. Lett. 90, 131104 (2007) https://doi.org/10.1063/1.2717518

Abstract

View articletitled, Improved organic semiconductor lasers based on a mixed-order distributed feedback resonator design

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Near-diffraction-limited passively $Q$ -switched $Yb : Y_{3} {Al}_{5} O_{12}$ ceramic lasers with peak power $> 150 kW$

Jun Dong; Akira Shirakawa; Ken-ichi Ueda; Hideki Yagi; Takagimi Yanagitani; Alexander A. Kaminskii

Appl. Phys. Lett. 90, 131105 (2007) https://doi.org/10.1063/1.2717519

Abstract

View articletitled, Near-diffraction-limited passively <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">Q</mi></math>-switched <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Yb</mi><mo>:</mo><msub><mi mathvariant="normal">Y</mi><mn>3</mn></msub><msub><mi mathvariant="normal">Al</mi><mn>5</mn></msub><msub><mi mathvariant="normal">O</mi><mn>12</mn></msub></mrow></math> ceramic lasers with peak power <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mo>></mo><mn>150</mn><mspace width="0.3em"></mspace><mi>kW</mi></mrow></math>

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Improving spatial resolution of two-photon microfabrication by using photoinitiator with high initiating efficiency

Jin-Feng Xing; Xian-Zi Dong; Wei-Qiang Chen; Xuan-Ming Duan; Nobuyuki Takeyasu; Takuo Tanaka; Satoshi Kawata

Appl. Phys. Lett. 90, 131106 (2007) https://doi.org/10.1063/1.2717532

Abstract

View articletitled, Improving spatial resolution of two-photon microfabrication by using photoinitiator with high initiating efficiency

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Enhanced light output from aligned micropit InGaN-based light emitting diodes using wet-etch sapphire patterning

T. V. Cuong; H. S. Cheong; H. G. Kim; H. Y. Kim; C.-H. Hong; E. K. Suh; H. K. Cho; B. H. Kong

Appl. Phys. Lett. 90, 131107 (2007) https://doi.org/10.1063/1.2714203

Abstract

View articletitled, Enhanced light output from aligned micropit InGaN-based light emitting diodes using wet-etch sapphire patterning

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Single-shot characterization of independent femtosecond extreme ultraviolet free electron and infrared laser pulses

P. Radcliffe; S. Düsterer; A. Azima; H. Redlin; J. Feldhaus; J. Dardis; K. Kavanagh; H. Luna; J. Pedregosa Gutierrez; P. Yeates; E. T. Kennedy; J. T. Costello; A. Delserieys; C. L. S. Lewis; R. Taïeb; A. Maquet; D. Cubaynes; M. Meyer

Appl. Phys. Lett. 90, 131108 (2007) https://doi.org/10.1063/1.2716360

Abstract

View articletitled, Single-shot characterization of independent femtosecond extreme ultraviolet free electron and infrared laser pulses

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Length characterization of DNA-wrapped carbon nanotubes using Raman spectroscopy

S. G. Chou; H. Son; J. Kong; A. Jorio; R. Saito; M. Zheng; G. Dresselhaus; M. S. Dresselhaus

Appl. Phys. Lett. 90, 131109 (2007) https://doi.org/10.1063/1.2713121

Abstract

View articletitled, Length characterization of DNA-wrapped carbon nanotubes using Raman spectroscopy

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Improved surface and structural properties of $In As ∕ Ga Sb$ superlattices on (001) GaSb substrate by introducing an InAsSb layer at interfaces

X. B. Zhang; J. H. Ryou; R. D. Dupuis; C. Xu; S. Mou; A. Petschke; K. C. Hsieh; S. L. Chuang

Appl. Phys. Lett. 90, 131110 (2007) https://doi.org/10.1063/1.2717524

Abstract

View articletitled, Improved surface and structural properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">In</mi><mi mathvariant="normal">As</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">Sb</mi></mrow></math> superlattices on (001) GaSb substrate by introducing an InAsSb layer at interfaces

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Laser-induced fluorescence within subwavelength metallic arrays of nanoholes indicating minimal dependence on hole periodicity

Je Hong Kim; Patrick J. Moyer

Appl. Phys. Lett. 90, 131111 (2007) https://doi.org/10.1063/1.2713771

Abstract

View articletitled, Laser-induced fluorescence within subwavelength metallic arrays of nanoholes indicating minimal dependence on hole periodicity

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High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature

H. Lim; S. Tsao; W. Zhang; M. Razeghi

Appl. Phys. Lett. 90, 131112 (2007) https://doi.org/10.1063/1.2719160

Abstract

View articletitled, High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature

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Fabrication and characterization of femtosecond laser written waveguides in chalcogenide glass

M. Hughes; W. Yang; D. Hewak

Appl. Phys. Lett. 90, 131113 (2007) https://doi.org/10.1063/1.2718486

Abstract

View articletitled, Fabrication and characterization of femtosecond laser written waveguides in chalcogenide glass

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Subsurface probing of terahertz particle plasmons

K. J. Chau; K. M. Rieckmann; A. Y. Elezzabi

Appl. Phys. Lett. 90, 131114 (2007) https://doi.org/10.1063/1.2718504

Abstract

View articletitled, Subsurface probing of terahertz particle plasmons

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Excitonic ultraviolet lasing in ZnO-based light emitting devices

Y. R. Ryu; J. A. Lubguban; T. S. Lee; H. W. White; T. S. Jeong; C. J. Youn; B. J. Kim

Appl. Phys. Lett. 90, 131115 (2007) https://doi.org/10.1063/1.2718516

Abstract

View articletitled, Excitonic ultraviolet lasing in ZnO-based light emitting devices

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Intense ultraviolet emission from ${Tb}^{3 +}$ and ${Yb}^{3 +}$ codoped glass ceramic containing $Ca F_{2}$ nanocrystals

Lihui Huang; Tatsuya Yamashita; Rajan Jose; Yusuke Arai; Takenobu Suzuki; Yasutake Ohishi

Appl. Phys. Lett. 90, 131116 (2007) https://doi.org/10.1063/1.2719028

Abstract

View articletitled, Intense ultraviolet emission from <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Tb</mi><mrow><mn>3</mn><mo>+</mo></mrow></msup></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Yb</mi><mrow><mn>3</mn><mo>+</mo></mrow></msup></math> codoped glass ceramic containing <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ca</mi><msub><mi mathvariant="normal">F</mi><mn>2</mn></msub></mrow></math> nanocrystals

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PLASMAS AND ELECTRICAL DISCHARGES

Distinction between nonthermal plasma and thermal desorptions for $N O_{x}$ and $C O_{2}$

Keiichiro Yoshida; Masaaki Okubo; Toshiaki Yamamoto

Appl. Phys. Lett. 90, 131501 (2007) https://doi.org/10.1063/1.2716210

Abstract

View articletitled, Distinction between nonthermal plasma and thermal desorptions for <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">N</mi><msub><mi mathvariant="normal">O</mi><mi>x</mi></msub></mrow></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">C</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math>

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Investigation of dielectric barrier discharge dependence on permittivity of barrier materials

Ruixing Li; Qing Tang; Shu Yin; Tsugio Sato

Appl. Phys. Lett. 90, 131502 (2007) https://doi.org/10.1063/1.2716848

Abstract

View articletitled, Investigation of dielectric barrier discharge dependence on permittivity of barrier materials

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Dependence of ion sheath collapse on secondary electron emission in plasma immersion ion implantation

Dixon T. K. Kwok; Shihao Pu; Ricky K. Y. Fu; Fanya Jin; Paul K. Chu

Appl. Phys. Lett. 90, 131503 (2007) https://doi.org/10.1063/1.2717082

Abstract

View articletitled, Dependence of ion sheath collapse on secondary electron emission in plasma immersion ion implantation

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Self-limiting growth of tantalum oxide thin films by pulsed plasma-enhanced chemical vapor deposition

Michael Seman; Joshua J. Robbins; Sumit Agarwal; Colin A. Wolden

Appl. Phys. Lett. 90, 131504 (2007) https://doi.org/10.1063/1.2716310

Abstract

View articletitled, Self-limiting growth of tantalum oxide thin films by pulsed plasma-enhanced chemical vapor deposition

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Switching characteristics of microplasmas in a planar electrode gap

Hasibur Rahaman; Byung-Joon Lee; Isfried Petzenhauser; Klaus Frank; Jürgen Urban; Robert Stark

Appl. Phys. Lett. 90, 131505 (2007) https://doi.org/10.1063/1.2718490

Abstract

View articletitled, Switching characteristics of microplasmas in a planar electrode gap

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Annealing kinetics of nanoindentation-induced polycrystalline high pressure phases in crystalline silicon

S. Ruffell; J. E. Bradby; J. S. Williams

Appl. Phys. Lett. 90, 131901 (2007) https://doi.org/10.1063/1.2716854

Abstract

View articletitled, Annealing kinetics of nanoindentation-induced polycrystalline high pressure phases in crystalline silicon

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Ultrasonic attenuation properties of glassy alloys in views of complex viscoelasticity

Mikio Fukuhara; Wei Zhang; Dmitri V. Louzguine-Luzgin; Akihisa Inoue; Nobuyuki Nishiyama

Appl. Phys. Lett. 90, 131902 (2007) https://doi.org/10.1063/1.2716862

Abstract

View articletitled, Ultrasonic attenuation properties of glassy alloys in views of complex viscoelasticity

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Photoluminescence of Si-rich silicon nitride: Defect-related states and silicon nanoclusters

Minghua Wang; Dongsheng Li; Zhizhong Yuan; Deren Yang; Duanlin Que

Appl. Phys. Lett. 90, 131903 (2007) https://doi.org/10.1063/1.2717014

Abstract

View articletitled, Photoluminescence of Si-rich silicon nitride: Defect-related states and silicon nanoclusters

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Molecular statics calculation of the formation enthalpy for ternary metal systems based on the long-range empirical interatomic potentials

X. D. Dai; J. H. Li; B. X. Liu

Appl. Phys. Lett. 90, 131904 (2007) https://doi.org/10.1063/1.2716361

Abstract

View articletitled, Molecular statics calculation of the formation enthalpy for ternary metal systems based on the long-range empirical interatomic potentials

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Conduction band offset for ${Ga}_{0.62} {In}_{0.38} N_{x} {As}_{0.991 - x} {Sb}_{0.009} ∕ Ga N_{y} {As}_{1 - y} ∕ Ga As$ systems with the ground state transition at $1.5 - 1.65 μ m$

R. Kudrawiec; S. R. Bank; H. B. Yuen; H. Bae; M. A. Wistey; L. L. Goddard; James S. Harris, Jr.; M. Gladysiewicz; M. Motyka; J. Misiewicz

Appl. Phys. Lett. 90, 131905 (2007) https://doi.org/10.1063/1.2716366

Abstract

View articletitled, Conduction band offset for <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>Ga</mi><mn>0.62</mn></msub><msub><mi>In</mi><mn>0.38</mn></msub><msub><mi mathvariant="normal">N</mi><mi>x</mi></msub><msub><mi>As</mi><mrow><mn>0.991</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mi>Sb</mi><mn>0.009</mn></msub><mo>∕</mo><mi>Ga</mi><msub><mi mathvariant="normal">N</mi><mi>y</mi></msub><msub><mi>As</mi><mrow><mn>1</mn><mo>−</mo><mi>y</mi></mrow></msub><mo>∕</mo><mi>Ga</mi><mi>As</mi></mrow></math> systems with the ground state transition at <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>1.5</mn><mo>–</mo><mn>1.65</mn><mspace width="0.3em"></mspace><mi>μ</mi><mi mathvariant="normal">m</mi></mrow></math>

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Measurement of carrier concentration captured by $In As ∕ Ga As$ quantum dots using terahertz time-domain spectroscopy

Seung Jae Oh; Chul Kang; Inhee Maeng; Joo-Hiuk Son; Nam Ki Cho; Jin Dong Song; Won Jun Choi; Woon-Jo Cho; Jung Il Lee

Appl. Phys. Lett. 90, 131906 (2007) https://doi.org/10.1063/1.2716859

Abstract

View articletitled, Measurement of carrier concentration captured by <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">In</mi><mi mathvariant="normal">As</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi></mrow></math> quantum dots using terahertz time-domain spectroscopy

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Well-width-dependent carrier lifetime in $Al Ga N ∕ Al Ga N$ quantum wells

J. Mickevičius; G. Tamulaitis; E. Kuokštis; K. Liu; M. S. Shur; J. P. Zhang; R. Gaska

Appl. Phys. Lett. 90, 131907 (2007) https://doi.org/10.1063/1.2717145

Abstract

View articletitled, Well-width-dependent carrier lifetime in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Al</mi><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi><mo>∕</mo><mi mathvariant="normal">Al</mi><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi></mrow></math> quantum wells

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Direct comparison of optical characteristics of InGaN-based laser diode structures grown on pendeo epitaxial GaN and sapphire substrates

J. S. Hwang; A. Gokarna; Yong-Hoon Cho; J. K. Son; S. N. Lee; T. Sakong; H. S. Paek; O. H. Nam; Y. Park

Appl. Phys. Lett. 90, 131908 (2007) https://doi.org/10.1063/1.2716313

Abstract

View articletitled, Direct comparison of optical characteristics of InGaN-based laser diode structures grown on pendeo epitaxial GaN and sapphire substrates

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Plasma-assisted molecular-beam epitaxy of $Al N (11 \bar{2} 2)$ on $m$ sapphire

L. Lahourcade; E. Bellet-Amalric; E. Monroy; M. Abouzaid; P. Ruterana

Appl. Phys. Lett. 90, 131909 (2007) https://doi.org/10.1063/1.2716375

Abstract

View articletitled, Plasma-assisted molecular-beam epitaxy of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Al</mi><mi mathvariant="normal">N</mi><mrow><mo>(</mo><mn>11</mn><mover><mn>2</mn><mo>¯</mo></mover><mn>2</mn><mo>)</mo></mrow></mrow></math> on <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">m</mi></math> sapphire

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Mechanism for the ablation of Si⟨111⟩ with pairs of ultrashort laser pulses

Zhan Hu; Sima Singha; Yaoming Liu; Robert J. Gordon

Appl. Phys. Lett. 90, 131910 (2007) https://doi.org/10.1063/1.2716838

Abstract

View articletitled, Mechanism for the ablation of Si⟨111⟩ with pairs of ultrashort laser pulses

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Real-time observation of oxidation and photo-oxidation of rubrene thin films by spectroscopic ellipsometry

M. Kytka; A. Gerlach; F. Schreiber; J. Kováč

Appl. Phys. Lett. 90, 131911 (2007) https://doi.org/10.1063/1.2717561

Abstract

View articletitled, Real-time observation of oxidation and photo-oxidation of rubrene thin films by spectroscopic ellipsometry

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Deformation of glass forming metallic liquids: Configurational changes and their relation to elastic softening

John S. Harmon; Marios D. Demetriou; William L. Johnson; Min Tao

Appl. Phys. Lett. 90, 131912 (2007) https://doi.org/10.1063/1.2717017

Abstract

View articletitled, Deformation of glass forming metallic liquids: Configurational changes and their relation to elastic softening

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Existence of tetrahedral site symmetry about Ge atoms in a single-crystal film of ${Ge}_{2} {Sb}_{2} {Te}_{5}$ found by x-ray fluorescence holography

S. Hosokawa; T. Ozaki; K. Hayashi; N. Happo; M. Fujiwara; K. Horii; P. Fons; A. V. Kolobov; J. Tominaga

Appl. Phys. Lett. 90, 131913 (2007) https://doi.org/10.1063/1.2717094

Abstract

View articletitled, Existence of tetrahedral site symmetry about Ge atoms in a single-crystal film of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Ge</mi><mn>2</mn></msub><msub><mi mathvariant="normal">Sb</mi><mn>2</mn></msub><msub><mi mathvariant="normal">Te</mi><mn>5</mn></msub></mrow></math> found by x-ray fluorescence holography

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Effect of nitrogen content in ${Hf}_{x} {Ta}_{y} N$ metal gate on work function and thermal stability of advanced metal-oxide-semiconductor devices

Ping-Hung Tsai; Kuei-Shu Chang-Liao; Tzu-Cheng Wang; Tien-Ko Wang; Chuen-Horng Tsai; Chin-Lung Cheng

Appl. Phys. Lett. 90, 132101 (2007) https://doi.org/10.1063/1.2716311

Abstract

View articletitled, Effect of nitrogen content in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Hf</mi><mi>x</mi></msub><msub><mi mathvariant="normal">Ta</mi><mi>y</mi></msub><mi mathvariant="normal">N</mi></mrow></math> metal gate on work function and thermal stability of advanced metal-oxide-semiconductor devices

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Memory characteristics of Co nanocrystal memory device with $Hf O_{2}$ as blocking oxide

F. M. Yang; T. C. Chang; P. T. Liu; P. H. Yeh; Y. C. Yu; J. Y. Lin; S. M. Sze; J. C. Lou

Appl. Phys. Lett. 90, 132102 (2007) https://doi.org/10.1063/1.2716845

Abstract

View articletitled, Memory characteristics of Co nanocrystal memory device with <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Hf</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> as blocking oxide

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Persistent photoconductivity in $p$ -type ZnO(N) grown by molecular beam epitaxy

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; A. I. Belogorokhov; E. A. Kozhukhova; A. V. Markov; A. Osinsky; J. W. Dong; S. J. Pearton

Appl. Phys. Lett. 90, 132103 (2007) https://doi.org/10.1063/1.2717089

Abstract

View articletitled, Persistent photoconductivity in <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-type ZnO(N) grown by molecular beam epitaxy

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Effects of the permanent dipoles of self-assembled monolayer-treated insulator surfaces on the field-effect mobility of a pentacene thin-film transistor

Yunseok Jang; Jeong Ho Cho; Do Hwan Kim; Yeong Don Park; Minkyu Hwang; Kilwon Cho

Appl. Phys. Lett. 90, 132104 (2007) https://doi.org/10.1063/1.2457776

Abstract

View articletitled, Effects of the permanent dipoles of self-assembled monolayer-treated insulator surfaces on the field-effect mobility of a pentacene thin-film transistor

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Valence band offset of $In N ∕ Al N$ heterojunctions measured by x-ray photoelectron spectroscopy

P. D. C. King; T. D. Veal; P. H. Jefferson; C. F. McConville; T. Wang; P. J. Parbrook; Hai Lu; W. J. Schaff

Appl. Phys. Lett. 90, 132105 (2007) https://doi.org/10.1063/1.2716994

Abstract

View articletitled, Valence band offset of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">In</mi><mi mathvariant="normal">N</mi><mo>∕</mo><mi mathvariant="normal">Al</mi><mi mathvariant="normal">N</mi></mrow></math> heterojunctions measured by x-ray photoelectron spectroscopy

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Solution-processable pentacene microcrystal arrays for high performance organic field-effect transistors

Wi Hyoung Lee; Do Hwan Kim; Yunseok Jang; Jeong Ho Cho; Minkyu Hwang; Yeong Don Park; Yong Hoon Kim; Jeong In Han; Kilwon Cho

Appl. Phys. Lett. 90, 132106 (2007) https://doi.org/10.1063/1.2717087

Abstract

View articletitled, Solution-processable pentacene microcrystal arrays for high performance organic field-effect transistors

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Schottky barrier modulation on silicon nanowires

J. Piscator; O. Engström

Appl. Phys. Lett. 90, 132107 (2007) https://doi.org/10.1063/1.2717088

Abstract

View articletitled, Schottky barrier modulation on silicon nanowires

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Vertically coupled quantum wires in a longitudinal magnetic field

Lev G. Mourokh; Anatoly Yu. Smirnov; Saskia F. Fischer

Appl. Phys. Lett. 90, 132108 (2007) https://doi.org/10.1063/1.2717147

Abstract

View articletitled, Vertically coupled quantum wires in a longitudinal magnetic field

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Subsurface enrichment of Co in Si (100) at initial stages of growth at room temperature: A study by high-resolution Rutherford backscattering

S. P. Dash; D. Goll; H. D. Carstanjen

Appl. Phys. Lett. 90, 132109 (2007) https://doi.org/10.1063/1.2717525

Abstract

View articletitled, Subsurface enrichment of Co in Si (100) at initial stages of growth at room temperature: A study by high-resolution Rutherford backscattering

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Electrical and Raman characterization of silicon and germanium-filled microstructured optical fibers

C. E. Finlayson; A. Amezcua-Correa; P. J. A. Sazio; N. F. Baril; J. V. Badding

Appl. Phys. Lett. 90, 132110 (2007) https://doi.org/10.1063/1.2713755

Abstract

View articletitled, Electrical and Raman characterization of silicon and germanium-filled microstructured optical fibers

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Temperature-dependent study of $n - Zn O ∕ p - Ga N$ diodes

Kuang-Po Hsueh; Shou-Chien Huang; Ching-Tai Li; Yue-Ming Hsin; Jinn-Kong Sheu; Wei-Chih Lai; Chun-Ju Tun

Appl. Phys. Lett. 90, 132111 (2007) https://doi.org/10.1063/1.2716324

Abstract

View articletitled, Temperature-dependent study of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>n</mi><mtext>-</mtext><mi mathvariant="normal">Zn</mi><mi mathvariant="normal">O</mi><mo>∕</mo><mi>p</mi><mtext>-</mtext><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi></mrow></math> diodes

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Full-band study of current across silicon nanowire transistors

K. Nehari; N. Cavassilas; F. Michelini; M. Bescond; J. L. Autran; M. Lannoo

Appl. Phys. Lett. 90, 132112 (2007) https://doi.org/10.1063/1.2716351

Abstract

View articletitled, Full-band study of current across silicon nanowire transistors

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Photoluminescence and built-in electric field in $Zn O ∕ {Mg}_{0.1} {Zn}_{0.9} O$ quantum wells

B. P. Zhang; B. L. Liu; J. Z. Yu; Q. M. Wang; C. Y. Liu; Y. C. Liu; Y. Segawa

Appl. Phys. Lett. 90, 132113 (2007) https://doi.org/10.1063/1.2716367

Abstract

View articletitled, Photoluminescence and built-in electric field in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Zn</mi><mi mathvariant="normal">O</mi><mo>∕</mo><msub><mi mathvariant="normal">Mg</mi><mn>0.1</mn></msub><msub><mi mathvariant="normal">Zn</mi><mn>0.9</mn></msub><mi mathvariant="normal">O</mi></mrow></math> quantum wells

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Regrowth-related defect formation and evolution in $1 MeV$ amorphized (001) Ge

D. P. Hickey; Z. L. Bryan; K. S. Jones; R. G. Elliman; E. E. Haller

Appl. Phys. Lett. 90, 132114 (2007) https://doi.org/10.1063/1.2717538

Abstract

View articletitled, Regrowth-related defect formation and evolution in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>1</mn><mspace width="0.3em"></mspace><mi>MeV</mi></mrow></math> amorphized (001) Ge

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Engineering carrier transport across organic heterojunctions by interface doping

S. W. Tsang; Z. H. Lu; Y. Tao

Appl. Phys. Lett. 90, 132115 (2007) https://doi.org/10.1063/1.2718273

Abstract

View articletitled, Engineering carrier transport across organic heterojunctions by interface doping

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Optical investigations of InN nanodots capped by GaN at different temperatures

C. S. Ku; W. C. Chou; M. C. Lee

Appl. Phys. Lett. 90, 132116 (2007) https://doi.org/10.1063/1.2716347

Abstract

View articletitled, Optical investigations of InN nanodots capped by GaN at different temperatures

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Hydrogen equilibration in polycrystalline silicon

K. von Maydell; N. H. Nickel

Appl. Phys. Lett. 90, 132117 (2007) https://doi.org/10.1063/1.2716348

Abstract

View articletitled, Hydrogen equilibration in polycrystalline silicon

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Deposition of ${In}_{2} S_{3}$ on $Cu (In, Ga) {(S, Se)}_{2}$ thin film solar cell absorbers by spray ion layer gas reaction: Evidence of strong interfacial diffusion

M. Bär; N. Allsop; I. Lauermann; Ch.-H. Fischer

Appl. Phys. Lett. 90, 132118 (2007) https://doi.org/10.1063/1.2717534

Abstract

View articletitled, Deposition of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">In</mi><mn>2</mn></msub><msub><mi mathvariant="normal">S</mi><mn>3</mn></msub></mrow></math> on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mo>(</mo><mi mathvariant="normal">In</mi><mo>,</mo><mi mathvariant="normal">Ga</mi><mo>)</mo></mrow><msub><mrow><mo>(</mo><mi mathvariant="normal">S</mi><mo>,</mo><mi mathvariant="normal">Se</mi><mo>)</mo></mrow><mn>2</mn></msub></mrow></math> thin film solar cell absorbers by spray ion layer gas reaction: Evidence of strong interfacial diffusion

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Current-induced magnetoresistance oscillations in two-dimensional electron systems

X. L. Lei

Appl. Phys. Lett. 90, 132119 (2007) https://doi.org/10.1063/1.2717572

Abstract

View articletitled, Current-induced magnetoresistance oscillations in two-dimensional electron systems

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Amorphous $Si ∕ Au$ wafer bonding

P. H. Chen; C. L. Lin; C. Y. Liu

Appl. Phys. Lett. 90, 132120 (2007) https://doi.org/10.1063/1.2719025

Abstract

View articletitled, Amorphous <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><mo>∕</mo><mi mathvariant="normal">Au</mi></mrow></math> wafer bonding

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Thickness-dependent energy level alignment of rubrene adsorbed on Au(111)

Li Wang; Shi Chen; Lei Liu; Dongchen Qi; Xingyu Gao; Andrew T. S. Wee

Appl. Phys. Lett. 90, 132121 (2007) https://doi.org/10.1063/1.2719033

Abstract

View articletitled, Thickness-dependent energy level alignment of rubrene adsorbed on Au(111)

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Graphene-based resonant-tunneling structures

J. Milton Pereira, Jr.; P. Vasilopoulos; F. M. Peeters

Appl. Phys. Lett. 90, 132122 (2007) https://doi.org/10.1063/1.2717092

Abstract

View articletitled, Graphene-based resonant-tunneling structures

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Band diagrams of spin tunneling junctions ${La}_{0.6} {Sr}_{0.4} Mn O_{3} ∕ Nb : Sr Ti O_{3}$ and $Sr Ru O_{3} ∕ Nb : Sr Ti O_{3}$ determined by in situ photoemission spectroscopy

M. Minohara; I. Ohkubo; H. Kumigashira; M. Oshima

Appl. Phys. Lett. 90, 132123 (2007) https://doi.org/10.1063/1.2717517

Abstract

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Surface-induced large side-gating phenomenon in GaAs quantum wire transistors and its removal by surface passivation using Si interface control layer

Rui Jia; Seiya Kasai; Qing Wang; Shi Bing Long; Jie Bin Niu; Zhi Gang Li; Ming Liu

Appl. Phys. Lett. 90, 132124 (2007) https://doi.org/10.1063/1.2718275

Abstract

View articletitled, Surface-induced large side-gating phenomenon in GaAs quantum wire transistors and its removal by surface passivation using Si interface control layer

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MAGNETISM AND SUPERCONDUCTIVITY

Vortex motion in chilarity-controlled pair of magnetic disks

T. Kimura; Y. Otani; H. Masaki; T. Ishida; R. Antos; J. Shibata

Appl. Phys. Lett. 90, 132501 (2007) https://doi.org/10.1063/1.2716861

Abstract

View articletitled, Vortex motion in chilarity-controlled pair of magnetic disks

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Detection of weak $(\sim 0.5 - 300 nT)$ ⁠, low frequency $(5 - 100 Hz)$ magnetic fields at room temperature by kilohertz modulation of the magneto-optical hysteresis in rare earth–iron garnet films

J. M. Hafez; J. Gao; J. G. Eden

Appl. Phys. Lett. 90, 132502 (2007) https://doi.org/10.1063/1.2713144

Abstract

View articletitled, Detection of weak <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mo>(</mo><mo>∼</mo><mn>0.5</mn><mo>–</mo><mn>300</mn><mspace width="0.3em"></mspace><mi>nT</mi><mo>)</mo></mrow></math>⁠, low frequency <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mo>(</mo><mn>5</mn><mo>–</mo><mn>100</mn><mspace width="0.3em"></mspace><mi>Hz</mi><mo>)</mo></mrow></math> magnetic fields at room temperature by kilohertz modulation of the magneto-optical hysteresis in rare earth–iron garnet films

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X-ray photoemission study of $Co Fe B ∕ Mg O$ thin film bilayers

J. C. Read; P. G. Mather; R. A. Buhrman

Appl. Phys. Lett. 90, 132503 (2007) https://doi.org/10.1063/1.2717091

Abstract

View articletitled, X-ray photoemission study of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Co</mi><mi mathvariant="normal">Fe</mi><mi mathvariant="normal">B</mi><mo>∕</mo><mi mathvariant="normal">Mg</mi><mi mathvariant="normal">O</mi></mrow></math> thin film bilayers

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Saturation and intrinsic dynamics of fluxons in NbTi and $Mg B_{2}$

R. V. Chamberlin; N. Newman; R. Gandikota; R. K. Singh; B. H. Moeckly

Appl. Phys. Lett. 90, 132504 (2007) https://doi.org/10.1063/1.2717111

Abstract

View articletitled, Saturation and intrinsic dynamics of fluxons in NbTi and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Mg</mi><msub><mi mathvariant="normal">B</mi><mn>2</mn></msub></mrow></math>

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Synthetic antiferromagnet for hard layer of exchange coupled composite media

Stephanie Hernandez; Manish Kapoor; R. H Victora

Appl. Phys. Lett. 90, 132505 (2007) https://doi.org/10.1063/1.2716860

Abstract

View articletitled, Synthetic antiferromagnet for hard layer of exchange coupled composite media

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Spin torque and heating effects in current-induced domain wall motion probed by transmission electron microscopy

F. Junginger; M. Kläui; D. Backes; U. Rüdiger; T. Kasama; R. E. Dunin-Borkowski; L. J. Heyderman; C. A. F. Vaz; J. A. C. Bland

Appl. Phys. Lett. 90, 132506 (2007) https://doi.org/10.1063/1.2709989

Abstract

View articletitled, Spin torque and heating effects in current-induced domain wall motion probed by transmission electron microscopy

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Perpendicular magnetization of $L 1_{}$ -ordered FePt films in the thinnest limit

S. Imada; A. Yamasaki; S. Suga; T. Shima; K. Takanashi

Appl. Phys. Lett. 90, 132507 (2007) https://doi.org/10.1063/1.2717516

Abstract

View articletitled, Perpendicular magnetization of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>L</mi><msub><mn>1</mn><mn></mn></msub></mrow></math>-ordered FePt films in the thinnest limit

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Spin transfer switching in dual MgO magnetic tunnel junctions

Zhitao Diao; Alex Panchula; Yunfei Ding; Mahendra Pakala; Shengyuan Wang; Zhanjie Li; Dmytro Apalkov; Hideyasu Nagai; Alexander Driskill-Smith; Lien-Chang Wang; Eugene Chen; Yiming Huai

Appl. Phys. Lett. 90, 132508 (2007) https://doi.org/10.1063/1.2717556

Abstract

View articletitled, Spin transfer switching in dual MgO magnetic tunnel junctions

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On the latent heat of high-temperature spin reorientation transitions

Michael D. Kuz’min; Manuel Richter

Appl. Phys. Lett. 90, 132509 (2007) https://doi.org/10.1063/1.2718271

Abstract

View articletitled, On the latent heat of high-temperature spin reorientation transitions

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On the formation of voids in internal tin ${Nb}_{3} Sn$ superconductors

C. Scheuerlein; M. Di Michiel; A. Haibel

Appl. Phys. Lett. 90, 132510 (2007) https://doi.org/10.1063/1.2716346

Abstract

View articletitled, On the formation of voids in internal tin <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Nb</mi><mn>3</mn></msub><mi mathvariant="normal">Sn</mi></mrow></math> superconductors

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Magnetic properties of Ni-doped MgO diluted magnetic insulators

S. Ramachandran; J. Narayan; J. T. Prater

Appl. Phys. Lett. 90, 132511 (2007) https://doi.org/10.1063/1.2717574

Abstract

View articletitled, Magnetic properties of Ni-doped MgO diluted magnetic insulators

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Structural and magnetic properties of epitaxially grown ${Ge}_{1 - x} {Fe}_{x}$ thin films: Fe concentration dependence

Yusuke Shuto; Masaaki Tanaka; Satoshi Sugahara

Appl. Phys. Lett. 90, 132512 (2007) https://doi.org/10.1063/1.2718270

Abstract

View articletitled, Structural and magnetic properties of epitaxially grown <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Ge</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mi mathvariant="normal">Fe</mi><mi>x</mi></msub></mrow></math> thin films: Fe concentration dependence

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$I ‐ V$ characteristics of ${La}_{1.84} {Sr}_{0.16} Cu O_{4} ∕ Nb$ -doped $Sr Ti O_{3}$ heterojunction

X. Q. Xiang; J. F. Qu; Y. Q. Zhang; X. L. Lu; T. F. Zhou; G. Li; X. G. Li

Appl. Phys. Lett. 90, 132513 (2007) https://doi.org/10.1063/1.2719154

Abstract

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DIELECTRICS AND FERROELECTRICITY

Electric energy density of dielectric nanocomposites

J. Y. Li; L. Zhang; Stephen Ducharme

Appl. Phys. Lett. 90, 132901 (2007) https://doi.org/10.1063/1.2716847

Abstract

View articletitled, Electric energy density of dielectric nanocomposites

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Thickness dependence of in-plane dielectric and ferroelectric properties of ${Ba}_{0.7} {Sr}_{0.3} Ti O_{3}$ thin films epitaxially grown on $La Al O_{3}$

X. Y. Zhou; D. Y. Wang; R. K. Zheng; H. Y. Tian; J. Q. Qi; H. L. W. Chan; C. L. Choy; Y. Wang

Appl. Phys. Lett. 90, 132902 (2007) https://doi.org/10.1063/1.2716865

Abstract

View articletitled, Thickness dependence of in-plane dielectric and ferroelectric properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Ba</mi><mn>0.7</mn></msub><msub><mi mathvariant="normal">Sr</mi><mn>0.3</mn></msub><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> thin films epitaxially grown on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">La</mi><mi mathvariant="normal">Al</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math>

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Band gap and Schottky barrier heights of multiferroic $Bi Fe O_{3}$

S. J. Clark; J. Robertson

Appl. Phys. Lett. 90, 132903 (2007) https://doi.org/10.1063/1.2716868

Abstract

View articletitled, Band gap and Schottky barrier heights of multiferroic <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Bi</mi><mi mathvariant="normal">Fe</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math>

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Critical temperatures of $70 % Pb ({Mg}_{1 ∕ 3} {Nb}_{2 ∕ 3}) O_{3} - 30 % Pb Ti O_{3}$ thin films investigated by dielectric, ferroelectric, and structural measurements

X. J. Meng; D. Rémiens; M. Detalle; B. Dkhil; J. L. Sun; J. H. Chu

Appl. Phys. Lett. 90, 132904 (2007) https://doi.org/10.1063/1.2716312

Abstract

View articletitled, Critical temperatures of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>70</mn><mo>%</mo><mi mathvariant="normal">Pb</mi><mrow><mo>(</mo><msub><mi mathvariant="normal">Mg</mi><mrow><mn>1</mn><mo>∕</mo><mn>3</mn></mrow></msub><msub><mi mathvariant="normal">Nb</mi><mrow><mn>2</mn><mo>∕</mo><mn>3</mn></mrow></msub><mo>)</mo></mrow><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub><mo>–</mo><mn>30</mn><mo>%</mo><mi mathvariant="normal">Pb</mi><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> thin films investigated by dielectric, ferroelectric, and structural measurements

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$(1 - x) Ba Ti O_{3} - x ({Na}_{0.5} K_{0.5}) Nb O_{3}$ ceramics for multilayer ceramic capacitors

Chang-Hak Choi; Cheol-Woo Ahn; Sahn Nahm; Jung-Oh Hong; Jung-Soo Lee

Appl. Phys. Lett. 90, 132905 (2007) https://doi.org/10.1063/1.2717559

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mo>(</mo><mn>1</mn><mo>−</mo><mi>x</mi><mo>)</mo></mrow><mi mathvariant="normal">Ba</mi><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub><mo>−</mo><mi>x</mi><mrow><mo>(</mo><msub><mi mathvariant="normal">Na</mi><mn>0.5</mn></msub><msub><mi mathvariant="normal">K</mi><mn>0.5</mn></msub><mo>)</mo></mrow><mi mathvariant="normal">Nb</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> ceramics for multilayer ceramic capacitors

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Thickness effects on the electrical characteristics of ${Ba}_{0.7} {Sr}_{0.3} Ti O_{3}$ capacitors with nano-Cr interlayer

Chia-Cheng Ho; Bi-Shiou Chiou; Li-Chun Chang

Appl. Phys. Lett. 90, 132906 (2007) https://doi.org/10.1063/1.2717553

Abstract

View articletitled, Thickness effects on the electrical characteristics of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Ba</mi><mn>0.7</mn></msub><msub><mi mathvariant="normal">Sr</mi><mn>0.3</mn></msub><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> capacitors with nano-Cr interlayer

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Ferrite with extraordinary electric and dielectric properties prepared from self-combustion technique

Qian Chen; Piyi Du; Wenyan Huang; Lu Jin; Wenjian Weng; Gaorong Han

Appl. Phys. Lett. 90, 132907 (2007) https://doi.org/10.1063/1.2718482

Abstract

View articletitled, Ferrite with extraordinary electric and dielectric properties prepared from self-combustion technique

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Precise control of phase transformation process in lead zirconate titanate thin films by focused line-beam scanning

Jang-Sik Lee; Jung-Kun Lee; Seung-Ki Joo

Appl. Phys. Lett. 90, 132908 (2007) https://doi.org/10.1063/1.2719636

Abstract

View articletitled, Precise control of phase transformation process in lead zirconate titanate thin films by focused line-beam scanning

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NANOSCALE SCIENCE AND DESIGN

Erasing diffraction orders: Opal versus Langmuir-Blodgett colloidal crystals

S. G. Romanov; M. Bardosova; D. E. Whitehead; I. M. Povey; M. Pemble; C. M. Sotomayor Torres

Appl. Phys. Lett. 90, 133101 (2007) https://doi.org/10.1063/1.2714198

Abstract

View articletitled, Erasing diffraction orders: Opal versus Langmuir-Blodgett colloidal crystals

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Capturing and depositing one nanoobject at a time: Single particle dip-pen nanolithography

Ying Wang; Yi Zhang; Bin Li; Junhong Lü; Jun Hu

Appl. Phys. Lett. 90, 133102 (2007) https://doi.org/10.1063/1.2714287

Abstract

View articletitled, Capturing and depositing one nanoobject at a time: Single particle dip-pen nanolithography

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Coaxial nanocable: Carbon nanotube core sheathed with boron nitride nanotube

Zhuhua Zhang; Wanlin Guo; Guo’an Tai

Appl. Phys. Lett. 90, 133103 (2007) https://doi.org/10.1063/1.2714997

Abstract

View articletitled, Coaxial nanocable: Carbon nanotube core sheathed with boron nitride nanotube

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Experimental observation of a band gap in individual ${Mn}_{12}$ molecules on Au(111)

S. Voss; M. Fonin; U. Rüdiger; M. Burgert; U. Groth

Appl. Phys. Lett. 90, 133104 (2007) https://doi.org/10.1063/1.2716867

Abstract

View articletitled, Experimental observation of a band gap in individual <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Mn</mi><mn>12</mn></msub></math> molecules on Au(111)

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Flow behavior of an Eyring fluid in a nanotube: The effect of the slip boundary condition

Fuqian Yang

Appl. Phys. Lett. 90, 133105 (2007) https://doi.org/10.1063/1.2717019

Abstract

View articletitled, Flow behavior of an Eyring fluid in a nanotube: The effect of the slip boundary condition

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Investigation of multilayer local tilt within long portion of single $Co ∕ Cu$ nanowires

D. Pullini; G. Innocenti; D. Busquets; A. Ruotolo

Appl. Phys. Lett. 90, 133106 (2007) https://doi.org/10.1063/1.2715121

Abstract

View articletitled, Investigation of multilayer local tilt within long portion of single <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Co</mi><mo>∕</mo><mi mathvariant="normal">Cu</mi></mrow></math> nanowires

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Ferroelectric domains and piezoelectricity in monocrystalline $Pb (Zr, Ti) O_{3}$ nanowires

J. Wang; C. S. Sandu; E. Colla; Y. Wang; W. Ma; R. Gysel; H. J. Trodahl; N. Setter; M. Kuball

Appl. Phys. Lett. 90, 133107 (2007) https://doi.org/10.1063/1.2716842

Abstract

View articletitled, Ferroelectric domains and piezoelectricity in monocrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Pb</mi><mrow><mo>(</mo><mi mathvariant="normal">Zr</mi><mo>,</mo><mi mathvariant="normal">Ti</mi><mo>)</mo></mrow><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> nanowires

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Laser direct writing carbon nanotube arrays on transparent substrates

Zhuo Chen; Yang Wei; Chunxiang Luo; Kaili Jiang; Lina Zhang; Qunqing Li; Shoushan Fan; Jiancun Gao

Appl. Phys. Lett. 90, 133108 (2007) https://doi.org/10.1063/1.2717530

Abstract

View articletitled, Laser direct writing carbon nanotube arrays on transparent substrates

Supplementary Material

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Self-breaking in planar few-atom Au constrictions for nanometer-spaced electrodes

K. O’Neill; E. A. Osorio; H. S. J. van der Zant

Appl. Phys. Lett. 90, 133109 (2007) https://doi.org/10.1063/1.2716989

Abstract

View articletitled, Self-breaking in planar few-atom Au constrictions for nanometer-spaced electrodes

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Local force gradients on Si(111) during simultaneous scanning tunneling/atomic force microscopy

H. Özgür Özer; Simon J. O’Brien; John B. Pethica

Appl. Phys. Lett. 90, 133110 (2007) https://doi.org/10.1063/1.2717115

Abstract

View articletitled, Local force gradients on Si(111) during simultaneous scanning tunneling/atomic force microscopy

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Epitaxial growth of manganese silicide nanowires on $Si (111) - 7 \times 7$ surfaces

Z.-Q. Zou; H. Wang; D. Wang; Q.-K. Wang; J.-J. Mao; X.-Y. Kong

Appl. Phys. Lett. 90, 133111 (2007) https://doi.org/10.1063/1.2717580

Abstract

View articletitled, Epitaxial growth of manganese silicide nanowires on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><mrow><mo>(</mo><mn>111</mn><mo>)</mo></mrow><mtext>-</mtext><mn>7</mn><mo>×</mo><mn>7</mn></mrow></math> surfaces

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Auger recombination and intraband absorption of two-photon-excited carriers in colloidal CdSe quantum dots

Yingli Qu; Wei Ji; Yuangang Zheng; Jackie Y. Ying

Appl. Phys. Lett. 90, 133112 (2007) https://doi.org/10.1063/1.2716067

Abstract

View articletitled, Auger recombination and intraband absorption of two-photon-excited carriers in colloidal CdSe quantum dots

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Three-photon absorption in ZnSe and $Zn Se ∕ Zn S$ quantum dots

Amit D. Lad; P. Prem Kiran; G. Ravindra Kumar; Shailaja Mahamuni

Appl. Phys. Lett. 90, 133113 (2007) https://doi.org/10.1063/1.2714994

Abstract

View articletitled, Three-photon absorption in ZnSe and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Zn</mi><mi mathvariant="normal">Se</mi><mo>∕</mo><mi mathvariant="normal">Zn</mi><mi mathvariant="normal">S</mi></mrow></math> quantum dots

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Large-area two-dimensional photonic crystals of metallic nanocylinders based on colloidal gold nanoparticles

Xinping Zhang; Baoquan Sun; Hongcang Guo; Nicolas Tetreault; Harald Giessen; Richard H. Friend

Appl. Phys. Lett. 90, 133114 (2007) https://doi.org/10.1063/1.2717567

Abstract

View articletitled, Large-area two-dimensional photonic crystals of metallic nanocylinders based on colloidal gold nanoparticles

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Magnetic alignment of ZnO nanowires for optoelectronic device applications

Sang-Won Lee; Min-Chang Jeong; Jae-Min Myoung; Gee-Sung Chae; In-Jae Chung

Appl. Phys. Lett. 90, 133115 (2007) https://doi.org/10.1063/1.2717575

Abstract

View articletitled, Magnetic alignment of ZnO nanowires for optoelectronic device applications

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Encapsulation of segmented Pd–Co nanocomposites into vertically aligned carbon nanotubes by plasma-hydrogen-induced demixing

Takeshi Fujita; Yasuhiko Hayashi; Tomoharu Tokunaga; T. Butler; N. L. Rupesinghe; K. B. K. Teo; G. A. J. Amaratunga

Appl. Phys. Lett. 90, 133116 (2007) https://doi.org/10.1063/1.2718268

Abstract

View articletitled, Encapsulation of segmented Pd–Co nanocomposites into vertically aligned carbon nanotubes by plasma-hydrogen-induced demixing

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Dispersion of magnetic metals on expanded graphite for the shielding of electromagnetic radiations

Yuan Huang; Zheng Xu; Jianyi Shen; Tao Tang; Runsheng Huang

Appl. Phys. Lett. 90, 133117 (2007) https://doi.org/10.1063/1.2718269

Abstract

View articletitled, Dispersion of magnetic metals on expanded graphite for the shielding of electromagnetic radiations

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Effect of grain size and pores on the dielectric constant of nanocrystalline diamond films

Z. L. Wang; J. J. Li; Z. H. Sun; Y. L. Li; Q. Luo; C. Z. Gu; Z. Cui

Appl. Phys. Lett. 90, 133118 (2007) https://doi.org/10.1063/1.2718484

Abstract

View articletitled, Effect of grain size and pores on the dielectric constant of nanocrystalline diamond films

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Mechanics of precisely controlled thin film buckling on elastomeric substrate

Hanqing Jiang; Yugang Sun; John A. Rogers; Yonggang Huang

Appl. Phys. Lett. 90, 133119 (2007) https://doi.org/10.1063/1.2719027

Abstract

View articletitled, Mechanics of precisely controlled thin film buckling on elastomeric substrate

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Pulsed ion-beam induced nucleation and growth of Ge nanocrystals on $Si O_{2}$

N. P. Stepina; A. V. Dvurechenskii; V. A. Armbrister; V. G. Kesler; P. L. Novikov; A. K. Gutakovskii; V. V. Kirienko; Zh. V. Smagina; R. Groetzschel

Appl. Phys. Lett. 90, 133120 (2007) https://doi.org/10.1063/1.2719163

Abstract

View articletitled, Pulsed ion-beam induced nucleation and growth of Ge nanocrystals on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math>

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Bias-induced local heating in atom-sized metal contacts at $77 K$

Makusu Tsutsui; Shu Kurokawa; Akira Sakai

Appl. Phys. Lett. 90, 133121 (2007) https://doi.org/10.1063/1.2719682

Abstract

View articletitled, Bias-induced local heating in atom-sized metal contacts at <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>77</mn><mspace width="0.3em"></mspace><mi mathvariant="normal">K</mi></mrow></math>

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Free vibration analysis of fluid-conveying single-walled carbon nanotubes

C. D. Reddy; C. Lu; S. Rajendran; K. M. Liew

Appl. Phys. Lett. 90, 133122 (2007) https://doi.org/10.1063/1.2717554

Abstract

View articletitled, Free vibration analysis of fluid-conveying single-walled carbon nanotubes

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Coercivity and nanostructure in magnetic spinel $Mg {(Mn, Fe)}_{2} O_{4}$

C. L. Zhang; S. Yeo; Y. Horibe; Y. J. Choi; S. Guha; M. Croft; S.-W. Cheong; S. Mori

Appl. Phys. Lett. 90, 133123 (2007) https://doi.org/10.1063/1.2717568

Abstract

View articletitled, Coercivity and nanostructure in magnetic spinel <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Mg</mi><msub><mrow><mo>(</mo><mi mathvariant="normal">Mn</mi><mo>,</mo><mi mathvariant="normal">Fe</mi><mo>)</mo></mrow><mn>2</mn></msub><msub><mi mathvariant="normal">O</mi><mn>4</mn></msub></mrow></math>

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Coupling interaction in 1-3-type multiferroic composite thin films

XiaoYan Lu; Biao Wang; Yue Zheng; Earle Ryba

Appl. Phys. Lett. 90, 133124 (2007) https://doi.org/10.1063/1.2717585

Abstract

View articletitled, Coupling interaction in 1-3-type multiferroic composite thin films

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DEVICE PHYSICS

Capacitance-voltage characterization of electron beam induced surface cross-linked functional monomers

Santosh Mahapatra; V. N. Bhoraskar; S. A. Gangal; Dhananjay Bodas

Appl. Phys. Lett. 90, 133501 (2007) https://doi.org/10.1063/1.2716839

Abstract

View articletitled, Capacitance-voltage characterization of electron beam induced surface cross-linked functional monomers

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Charge carrier generation and electron blocking at interlayers in polymer solar cells

Chunhong Yin; Björn Pieper; Burkhard Stiller; Thomas Kietzke; Dieter Neher

Appl. Phys. Lett. 90, 133502 (2007) https://doi.org/10.1063/1.2715029

Abstract

View articletitled, Charge carrier generation and electron blocking at interlayers in polymer solar cells

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Hysteresis and threshold voltage shift of pentacene thin-film transistors and inverters with ${Al}_{2} O_{3}$ gate dielectric

Jae Bon Koo; Chan Hoe Ku; Sang Chul Lim; Seong Hyun Kim; Jung Hun Lee

Appl. Phys. Lett. 90, 133503 (2007) https://doi.org/10.1063/1.2717015

Abstract

View articletitled, Hysteresis and threshold voltage shift of pentacene thin-film transistors and inverters with <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Al</mi><mn>2</mn></msub><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> gate dielectric

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Optimum charge carrier mobility in organic solar cells

M. M. Mandoc; L. J. A. Koster; P. W. M. Blom

Appl. Phys. Lett. 90, 133504 (2007) https://doi.org/10.1063/1.2711534

Abstract

View articletitled, Optimum charge carrier mobility in organic solar cells

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Magnetic-fluid optical-fiber modulators via magnetic modulation

J. J. Chieh; S. Y. Yang; H. E. Horng; Chin-Yih Hong; H. C. Yang

Appl. Phys. Lett. 90, 133505 (2007) https://doi.org/10.1063/1.2716365

Abstract

View articletitled, Magnetic-fluid optical-fiber modulators via magnetic modulation

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Fermi energy pinning at the surface of high mobility ${In}_{0.53} {Ga}_{0.47} As ∕ {In}_{0.52} {Al}_{0.48} As$ modulation doped field effect transistor structures

E. Skuras; C. R. Stanley

Appl. Phys. Lett. 90, 133506 (2007) https://doi.org/10.1063/1.2716844

Abstract

View articletitled, Fermi energy pinning at the surface of high mobility <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">In</mi><mn>0.53</mn></msub><msub><mi mathvariant="normal">Ga</mi><mn>0.47</mn></msub><mi mathvariant="normal">As</mi><mo>∕</mo><msub><mi mathvariant="normal">In</mi><mn>0.52</mn></msub><msub><mi mathvariant="normal">Al</mi><mn>0.48</mn></msub><mi mathvariant="normal">As</mi></mrow></math> modulation doped field effect transistor structures

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Electronic switching device based on gate-controlled conductivity anisotropy

O. Bierwagen; W. T. Masselink

Appl. Phys. Lett. 90, 133507 (2007) https://doi.org/10.1063/1.2717523

Abstract

View articletitled, Electronic switching device based on gate-controlled conductivity anisotropy

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High-efficiency low operation voltage organic light-emitting diodes

Chong-an Di; Gui Yu; Yunqi Liu; Xinjun Xu; Yabin Song; Daoben Zhu

Appl. Phys. Lett. 90, 133508 (2007) https://doi.org/10.1063/1.2718274

Abstract

View articletitled, High-efficiency low operation voltage organic light-emitting diodes

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Enhanced photovoltaic response of organic solar cell by singlet-to-triplet exciton conversion

Chia-Ming Yang; Chi-Hui Wu; Hua-Hsin Liao; Kuei-Yuan Lai; Hong-Ping Cheng; Sheng-Fu Horng; Hsin-Fei Meng; Jow-Tsong Shy

Appl. Phys. Lett. 90, 133509 (2007) https://doi.org/10.1063/1.2716209

Abstract

View articletitled, Enhanced photovoltaic response of organic solar cell by singlet-to-triplet exciton conversion

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Isotopic labeling study of the oxygen diffusion in $Hf O_{2} ∕ Si O_{2} ∕ Si$

Ming Zhao; Kaoru Nakajima; Motofumi Suzuki; Kenji Kimura; Masashi Uematsu; Kazuyoshi Torii; Satoshi Kamiyama; Yasuo Nara; Heiji Watanabe; Kenji Shiraishi; Toyohiro Chikyow; Keisaku Yamada

Appl. Phys. Lett. 90, 133510 (2007) https://doi.org/10.1063/1.2717539

Abstract

View articletitled, Isotopic labeling study of the oxygen diffusion in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Hf</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub><mo>∕</mo><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub><mo>∕</mo><mi mathvariant="normal">Si</mi></mrow></math>

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Air stable, high performance pentacene thin-film transistor fabricated on $Si O_{2}$ gate insulator treated with $β$ -phenethyltrichlorosilane

Daisuke Kumaki; Masayuki Yahiro; Youji Inoue; Shizuo Tokito

Appl. Phys. Lett. 90, 133511 (2007) https://doi.org/10.1063/1.2717552

Abstract

View articletitled, Air stable, high performance pentacene thin-film transistor fabricated on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> gate insulator treated with <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">β</mi></math>-phenethyltrichlorosilane

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Noise characteristics of $100 nm$ scale $Ga As ∕ {Al}_{x} {Ga}_{1 - x} As$ scanning Hall probes

C. W. Hicks; L. Luan; K. A. Moler; E. Zeldov; H. Shtrikman

Appl. Phys. Lett. 90, 133512 (2007) https://doi.org/10.1063/1.2717565

Abstract

View articletitled, Noise characteristics of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>100</mn><mspace width="0.3em"></mspace><mi>nm</mi></mrow></math> scale <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi><mo>∕</mo><msub><mi mathvariant="normal">Al</mi><mi>x</mi></msub><msub><mi mathvariant="normal">Ga</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><mi mathvariant="normal">As</mi></mrow></math> scanning Hall probes

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Control of reverse twist domain near a pixel edge using strong vertical electric field in the fringe-field switching liquid crystal device

Mi Sook Kim; Seung Min Seen; Seung Hee Lee

Appl. Phys. Lett. 90, 133513 (2007) https://doi.org/10.1063/1.2715494

Abstract

View articletitled, Control of reverse twist domain near a pixel edge using strong vertical electric field in the fringe-field switching liquid crystal device

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Organic thin-film transistor integration using silicon nitride gate dielectric

Flora M. Li; Arokia Nathan; Yiliang Wu; Beng S. Ong

Appl. Phys. Lett. 90, 133514 (2007) https://doi.org/10.1063/1.2718505

Abstract

View articletitled, Organic thin-film transistor integration using silicon nitride gate dielectric

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Optical geometries for fiber-based organic photovoltaics

Jiwen Liu; Manoj A. G. Namboothiry; David L. Carroll

Appl. Phys. Lett. 90, 133515 (2007) https://doi.org/10.1063/1.2716864

Abstract

View articletitled, Optical geometries for fiber-based organic photovoltaics

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Temperature dependence of Hall effects in organic thin-film transistors on plastic films

Yasushi Takamatsu; Tsuyoshi Sekitani; Takao Someya

Appl. Phys. Lett. 90, 133516 (2007) https://doi.org/10.1063/1.2717144

Abstract

View articletitled, Temperature dependence of Hall effects in organic thin-film transistors on plastic films

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APPLIED BIOPHYSICS

Analysis of soft cantilevers as force transducers

Yu Xiang; David A. LaVan

Appl. Phys. Lett. 90, 133901 (2007) https://doi.org/10.1063/1.2716376

Abstract

View articletitled, Analysis of soft cantilevers as force transducers

Supplementary Material

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INTERDISCIPLINARY AND GENERAL PHYSICS

Piezoelectric/ultrananocrystalline diamond heterostructures for high-performance multifunctional micro/nanoelectromechanical systems

S. Srinivasan; J. Hiller; B. Kabius; O. Auciello

Appl. Phys. Lett. 90, 134101 (2007) https://doi.org/10.1063/1.2679209

Abstract

View articletitled, Piezoelectric/ultrananocrystalline diamond heterostructures for high-performance multifunctional micro/nanoelectromechanical systems

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Surface recombination velocity in GaAs and ${In}_{0.15} {Ga}_{0.85} As$ thin films

Guy Brammertz; Marc Heyns; Marc Meuris; Matty Caymax; Dehuai Jiang; Yves Mols; Stefan Degroote; Maarten Leys; Gustaaf Borghs

Appl. Phys. Lett. 90, 134102 (2007) https://doi.org/10.1063/1.2717533

Abstract

View articletitled, Surface recombination velocity in GaAs and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">In</mi><mn>0.15</mn></msub><msub><mi mathvariant="normal">Ga</mi><mn>0.85</mn></msub><mi mathvariant="normal">As</mi></mrow></math> thin films

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Rectified elongational streaming due to asymmetric electro-osmosis induced by ac polarization

Jie-Tang Wu; Jiong-Rong Du; Yi-Je Juang; Hsien-Hung Wei

Appl. Phys. Lett. 90, 134103 (2007) https://doi.org/10.1063/1.2717146

Abstract

View articletitled, Rectified elongational streaming due to asymmetric electro-osmosis induced by ac polarization

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Real-time optical monitoring of thin film growth by in situ pyrometry through multiple layers and effective media approximation modeling

F. Bénédic; P. Bruno; Ph. Pigeat

Appl. Phys. Lett. 90, 134104 (2007) https://doi.org/10.1063/1.2717558

Abstract

View articletitled, Real-time optical monitoring of thin film growth by in situ pyrometry through multiple layers and effective media approximation modeling

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COMMENTS

Comment on “High $T_{c}$ superconducting quantum interference devices made by ion irradiation” [Appl. Phys. Lett. 89, 112515 (2006)]

S. S. Tinchev

Appl. Phys. Lett. 90, 136101 (2007) https://doi.org/10.1063/1.2713233

Extract

View articletitled, Comment on “High <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>T</mi><mi>c</mi></msub></math> superconducting quantum interference devices made by ion irradiation” [Appl. Phys. Lett. 89, 112515 (2006)]

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Response to “Comment on ‘High $T_{c}$ superconducting quantum interference devices made by ion irradiation’ ” [Appl. Phys. Lett. 90, 136101 (2007)]

N. Bergeal; M. Sirena; J. Lesueur; G. Faini; M. Aprili; J. P. Contour

Appl. Phys. Lett. 90, 136102 (2007) https://doi.org/10.1063/1.2713234

Extract

View articletitled, Response to “Comment on ‘High <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>T</mi><mi>c</mi></msub></math> superconducting quantum interference devices made by ion irradiation’ ” [Appl. Phys. Lett. 90, 136101 (2007)]

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

APPLIED BIOPHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

COMMENTS

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