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LASERS, OPTICS, AND OPTOELECTRONICS

Tunable plasma wave resonant detection of optical beating in high electron mobility transistor

J. Torres; P. Nouvel; A. Akwoue-Ondo; L. Chusseau; F. Teppe; A. Shchepetov; S. Bollaert

Appl. Phys. Lett. 89, 201101 (2006) https://doi.org/10.1063/1.2388142

Abstract

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Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature

J. S. Xia; Y. Ikegami; Y. Shiraki; N. Usami; Y. Nakata

Appl. Phys. Lett. 89, 201102 (2006) https://doi.org/10.1063/1.2386915

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Single-mode operation in the slow-light regime using oscillatory waves in generalized left-handed heterostructures

Kosmas L. Tsakmakidis; Andreas Klaedtke; Durga P. Aryal; Cécile Jamois; Ortwin Hess

Appl. Phys. Lett. 89, 201103 (2006) https://doi.org/10.1063/1.2387873

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Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers

C. H. Kuo; C. M. Chen; C. W. Kuo; C. J. Tun; C. J. Pan; B. J. Pong; G. C. Chi

Appl. Phys. Lett. 89, 201104 (2006) https://doi.org/10.1063/1.2387941

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Near-infrared imprinted distributed feedback lasers

P. Del Carro; A. Camposeo; R. Stabile; E. Mele; L. Persano; R. Cingolani; D. Pisignano

Appl. Phys. Lett. 89, 201105 (2006) https://doi.org/10.1063/1.2387974

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Optical probes based on optical fibers and single-walled carbon nanotubes for hydrogen detection at cryogenic temperatures

A. Cusano; M. Consales; A. Cutolo; M. Penza; P. Aversa; M. Giordano; A. Guemes

Appl. Phys. Lett. 89, 201106 (2006) https://doi.org/10.1063/1.2370292

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Area-tunable micromirror based on electrowetting actuation of liquid-metal droplets

Zhiliang Wan; Hongjun Zeng; Alan Feinerman

Appl. Phys. Lett. 89, 201107 (2006) https://doi.org/10.1063/1.2388943

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Low threshold blue conjugated polymer lasers with first- and second-order distributed feedback

C. Karnutsch; C. Gýrtner; V. Haug; U. Lemmer; T. Farrell; B. S. Nehls; U. Scherf; J. Wang; T. Weimann; G. Heliotis; C. Pflumm; J. C. deMello; D. D. C. Bradley

Appl. Phys. Lett. 89, 201108 (2006) https://doi.org/10.1063/1.2390644

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Analysis of defects in an electric and photonic double-layer substrate made by separation-by-implanted-oxygen three-dimensional sculpting

Koichiro Kishima

Appl. Phys. Lett. 89, 201109 (2006) https://doi.org/10.1063/1.2388882

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Temperature mapping and thermal lensing in large-mode, high-power laser diodes

P. K. L. Chan; K. P. Pipe; J. J. Plant; R. B. Swint; P. W. Juodawlkis

Appl. Phys. Lett. 89, 201110 (2006) https://doi.org/10.1063/1.2388884

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Single-mode room-temperature emission with a silicon rod lattice

B. Cluzel; V. Calvo; T. Charvolin; E. Picard; P. Noé; E. Hadji

Appl. Phys. Lett. 89, 201111 (2006) https://doi.org/10.1063/1.2364876

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Lowering lasing threshold in ferroelectric liquid crystal sandwiched between dielectric multilayers

Yuko Matsuhisa; Wolfgang Haase; Akihiko Fujii; Masanori Ozaki

Appl. Phys. Lett. 89, 201112 (2006) https://doi.org/10.1063/1.2369539

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Compact, low-cost, and high-resolution interrogation unit for optical sensors

Peter Kiesel; Oliver Schmidt; Setu Mohta; Noble Johnson; Stefan Malzer

Appl. Phys. Lett. 89, 201113 (2006) https://doi.org/10.1063/1.2390650

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Room-temperature $In As Sb P ∕ In As$ light emitting diodes by liquid phase epitaxy for midinfrared $(3 - 5 μ m)$ dynamic scene projection

V. K. Malyutenko; O. Yu. Malyutenko; A. V. Zinovchuk

Appl. Phys. Lett. 89, 201114 (2006) https://doi.org/10.1063/1.2390655

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Photoluminescence and bowing parameters of $In As Sb ∕ In As$ multiple quantum wells grown by molecular beam epitaxy

Po-Wei Liu; G. Tsai; H. H. Lin; A. Krier; Q. D. Zhuang; M. Stone

Appl. Phys. Lett. 89, 201115 (2006) https://doi.org/10.1063/1.2388879

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Sensitivity characteristics in nanosized coated long period gratings

Andrea Cusano; Agostino Iadicicco; Pierluigi Pilla; Antonello Cutolo; Michele Giordano; Stefania Campopiano

Appl. Phys. Lett. 89, 201116 (2006) https://doi.org/10.1063/1.2388885

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High performance InP-based quantum cascade distributed feedback lasers with deeply etched lateral gratings

K. Kennedy; A. B. Krysa; J. S. Roberts; K. M. Groom; R. A. Hogg; D. G. Revin; L. R. Wilson; J. W. Cockburn

Appl. Phys. Lett. 89, 201117 (2006) https://doi.org/10.1063/1.2388887

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Photoluminescence oscillations in porous alumina films

K. Huang; L. Pu; Y. Shi; P. Han; R. Zhang; Y. D. Zheng

Appl. Phys. Lett. 89, 201118 (2006) https://doi.org/10.1063/1.2390645

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Broadband solid state optical amplifier based on a semiconducting polymer

D. Amarasinghe; A. Ruseckas; A. E. Vasdekis; M. Goossens; G. A. Turnbull; I. D. W. Samuel

Appl. Phys. Lett. 89, 201119 (2006) https://doi.org/10.1063/1.2390649

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Terahertz-wave near-field imaging with subwavelength resolution using surface-wave-assisted bow-tie aperture

Kunihiko Ishihara; Keishi Ohashi; Tomofumi Ikari; Hiroaki Minamide; Hiroyuki Yokoyama; Jun-ichi Shikata; Hiromasa Ito

Appl. Phys. Lett. 89, 201120 (2006) https://doi.org/10.1063/1.2387984

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PLASMAS AND ELECTRICAL DISCHARGES

Monte Carlo simulation of high power microwave window breakdown at atmospheric conditions

John T. Krile; Andreas A. Neuber; Hermann G. Krompholz; Thomas L. Gibson

Appl. Phys. Lett. 89, 201501 (2006) https://doi.org/10.1063/1.2388877

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Method to determine argon metastable number density and plasma electron temperature from spectral emission originating from four $4 p$ argon levels

Davide Mariotti; Yoshiki Shimizu; Takeshi Sasaki; Naoto Koshizaki

Appl. Phys. Lett. 89, 201502 (2006) https://doi.org/10.1063/1.2390631

Abstract

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Structural and electrical properties of low pressure metalorganic chemical vapor deposition grown ${Eu}_{2} O_{3}$ films on Si(100)

M. P. Singh; K. Shalini; S. A. Shivashankar; G. C. Deepak; N. Bhat

Appl. Phys. Lett. 89, 201901 (2006) https://doi.org/10.1063/1.2388128

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Oxygen-assisted control of surface morphology in nonepitaxial sputter growth of Ag

J. M. Riveiro; P. S. Normile; J. P. Andrés; J. A. González; J. A. De Toro; T. Muñoz; P. Muñiz

Appl. Phys. Lett. 89, 201902 (2006) https://doi.org/10.1063/1.2388140

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Depth-resolved optical studies of excitonic and phonon-assisted transitions in ZnO epilayers

Yong-Hoon Cho; Ji-Young Kim; Ho-Sang Kwack; Bong-Joon Kwon; Le Si Dang; Hang-Ju Ko; Takafumi Yao

Appl. Phys. Lett. 89, 201903 (2006) https://doi.org/10.1063/1.2388252

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Role of Ti in the reversible dehydrogenation of Ti-doped sodium alanate

Kewu Bai; Ping Wu

Appl. Phys. Lett. 89, 201904 (2006) https://doi.org/10.1063/1.2388865

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Remarkable solute trapping within rapidly growing dendrites

H. P. Wang; W. J. Yao; B. Wei

Appl. Phys. Lett. 89, 201905 (2006) https://doi.org/10.1063/1.2387971

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Brewster angle phenomenon in two-dimensional metallic photonic crystals and its application to polarization beam splitting

Xinhua Hu; Kai-Ming Ho

Appl. Phys. Lett. 89, 201906 (2006) https://doi.org/10.1063/1.2387981

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Visible band-gap ZnCdO heterostructures grown by molecular beam epitaxy

S. Sadofev; S. Blumstengel; J. Cui; J. Puls; S. Rogaschewski; P. Schäfer; F. Henneberger

Appl. Phys. Lett. 89, 201907 (2006) https://doi.org/10.1063/1.2388250

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Mechanism for Ohmic contact formation on ${Si}_{3} N_{4}$ passivated $Al Ga N ∕ Ga N$ high-electron-mobility transistors

B. Van Daele; G. Van Tendeloo; J. Derluyn; P. Shrivastava; A. Lorenz; M. R. Leys; M. Germain

Appl. Phys. Lett. 89, 201908 (2006) https://doi.org/10.1063/1.2388889

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Role of shear stiffening in reducing hydrogenation in intermetallic compounds

I. Jacob; M. Bereznitsky; O. Yeheskel; R. G. Leisure

Appl. Phys. Lett. 89, 201909 (2006) https://doi.org/10.1063/1.2390635

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Structural basis for the fast phase change of ${Ge}_{2} {Sb}_{2} {Te}_{5}$ ⁠: Ring statistics analogy between the crystal and amorphous states

Shinji Kohara; Kenichi Kato; Shigeru Kimura; Hitoshi Tanaka; Takeshi Usuki; Kentaro Suzuya; Hiroshi Tanaka; Yutaka Moritomo; Toshiyuki Matsunaga; Noboru Yamada; Yoshihito Tanaka; Hiroyoshi Suematsu; Masaki Takata

Appl. Phys. Lett. 89, 201910 (2006) https://doi.org/10.1063/1.2387870

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Supplementary Material

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Generation of misfit dislocations by basal-plane slip in $In Ga N ∕ Ga N$ heterostructures

R. Liu; J. Mei; S. Srinivasan; F. A. Ponce; H. Omiya; Y. Narukawa; T. Mukai

Appl. Phys. Lett. 89, 201911 (2006) https://doi.org/10.1063/1.2388895

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Protective layer formation during oxidation of ${Cu}_{3} Au (100)$ using hyperthermal $O_{2}$ molecular beam

Michio Okada; Michihiro Hashinokuchi; Masayuki Fukuoka; Toshio Kasai; Kousuke Moritani; Yuden Teraoka

Appl. Phys. Lett. 89, 201912 (2006) https://doi.org/10.1063/1.2390672

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

InGaAs quantum dot molecules around self-assembled GaAs nanomound templates

J. H. Lee; Zh. M. Wang; N. W. Strom; Yu. I. Mazur; G. J. Salamo

Appl. Phys. Lett. 89, 202101 (2006) https://doi.org/10.1063/1.2388049

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$p$ -type ${Zn}_{1 - x} {Mg}_{x} O$ films with Sb doping by radio-frequency magnetron sputtering

Peng Wang; Nuofu Chen; Zhigang Yin; Ruixuan Dai; Yiming Bai

Appl. Phys. Lett. 89, 202102 (2006) https://doi.org/10.1063/1.2388254

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Mechanism analysis of periodicity and weakening surge of GaAs photoconductive semiconductor switches

Wei Shi; Liqiang Tian

Appl. Phys. Lett. 89, 202103 (2006) https://doi.org/10.1063/1.2387120

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Realization of high hole concentrations in Mg doped semipolar $(10 \bar{1} \bar{1})$ GaN

J. F. Kaeding; H. Asamizu; H. Sato; M. Iza; T. E. Mates; S. P. DenBaars; J. S. Speck; S. Nakamura

Appl. Phys. Lett. 89, 202104 (2006) https://doi.org/10.1063/1.2378486

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Temperature dependence of the GaAsN conduction band structure

A. Grau; T. Passow; M. Hetterich

Appl. Phys. Lett. 89, 202105 (2006) https://doi.org/10.1063/1.2387973

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Magnetic field dependence of valley splitting in realistic $Si ∕ Si Ge$ quantum wells

Mark Friesen; M. A. Eriksson; S. N. Coppersmith

Appl. Phys. Lett. 89, 202106 (2006) https://doi.org/10.1063/1.2387975

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Energy-band alignments at $La Al O_{3}$ and Ge interfaces

Y. Y. Mi; S. J. Wang; J. W. Chai; J. S. Pan; A. C. H. Huan; M. Ning; C. K. Ong

Appl. Phys. Lett. 89, 202107 (2006) https://doi.org/10.1063/1.2387986

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High-performance microscale single-crystal transistors by lithography on an elastomer dielectric

Colin Reese; Wook-Jin Chung; Mang-mang Ling; Mark Roberts; Zhenan Bao

Appl. Phys. Lett. 89, 202108 (2006) https://doi.org/10.1063/1.2388151

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$p$ -type semiconducting dendrimers bearing thiophenyl peripheral moieties for organic field effect transistors

Kyung Hwan Kim; Zhenguo Chi; Min Ju Cho; Dong Hoon Choi; Han Saem Kang; Mi Yeon Cho; Jin-Soo Joo

Appl. Phys. Lett. 89, 202109 (2006) https://doi.org/10.1063/1.2388244

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Transition from electron accumulation to depletion at InGaN surfaces

T. D. Veal; P. H. Jefferson; L. F. J. Piper; C. F. McConville; T. B. Joyce; P. R. Chalker; L. Considine; Hai Lu; W. J. Schaff

Appl. Phys. Lett. 89, 202110 (2006) https://doi.org/10.1063/1.2387976

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Gate-controlled nuclear magnetic resonance in an $Al Ga As ∕ Ga As$ quantum Hall device

S. Masubuchi; K. Hamaya; T. Machida

Appl. Phys. Lett. 89, 202111 (2006) https://doi.org/10.1063/1.2387895

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Effect of hydrogenation on the memory properties of Si nanocrystals obtained by inductively coupled plasma chemical vapor deposition

Young-Kwan Cha; Sangjin Park; Youngsoo Park; In-Kyeong Yoo; Daigil Cha; Jung H. Shin; Suk-Ho Choi

Appl. Phys. Lett. 89, 202112 (2006) https://doi.org/10.1063/1.2388144

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Measurement of the GaSb surface band bending potential from the magnetotransport characteristics of GaSb–InAs–AlSb quantum wells

P. A. Folkes; Godfrey Gumbs; Wen Xu; M. Taysing-Lara

Appl. Phys. Lett. 89, 202113 (2006) https://doi.org/10.1063/1.2388147

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Deep level transient spectroscopy study of Pd and Pt sputtering damage in $n$ -type germanium

E. Simoen; K. Opsomer; C. Claeys; K. Maex; C. Detavernier; R. L. Van Meirhaeghe; P. Clauws

Appl. Phys. Lett. 89, 202114 (2006) https://doi.org/10.1063/1.2388869

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Extended microtunnels in GaN prepared by wet chemical etch

Hsin-Hsiung Huang; Hung-Yu Zeng; Chi-Ling Lee; Shih-Chang Lee; Wei-I Lee

Appl. Phys. Lett. 89, 202115 (2006) https://doi.org/10.1063/1.2374841

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Intermolecular and interlayer interactions in copper phthalocyanine films as measured with microspot photoemission spectroscopy

Takeharu Sugiyama; Toshihide Sasaki; Satoshi Kera; Nobuo Ueno; Toshiaki Munakata

Appl. Phys. Lett. 89, 202116 (2006) https://doi.org/10.1063/1.2388922

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Hot phonons in Si-doped GaN

J. Liberis; M. Ramonas; O. Kiprijanovic; A. Matulionis; N. Goel; J. Simon; K. Wang; H. Xing; D. Jena

Appl. Phys. Lett. 89, 202117 (2006) https://doi.org/10.1063/1.2388866

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Critical thickness of heavily boron-doped silicon-germanium alloys

Saurabh Chopra; Mehmet C. Ozturk; Veena Misra; Kris McGuire; L. E. McNeil

Appl. Phys. Lett. 89, 202118 (2006) https://doi.org/10.1063/1.2374870

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MAGNETISM AND SUPERCONDUCTIVITY

Enhancement of ferromagnetic properties of NiO:Fe thin film by Li doping

Yuan-Hua Lin; Rongjuan Zhao; Ce-Wen Nan; Minghao Ying; M. Kobayashi; Y. Ooki; A. Fujimori

Appl. Phys. Lett. 89, 202501 (2006) https://doi.org/10.1063/1.2388130

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Over 70% tunneling magnetoresistance at room temperature for a CoFe and $Al O_{x}$ based magnetic tunnel junction

J. Joshua Yang; Chengxiang Ji; Y. Austin Chang; Xianglin Ke; M. S. Rzchowski

Appl. Phys. Lett. 89, 202502 (2006) https://doi.org/10.1063/1.2387568

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High-pressure synthesis of giant magnetostrictive $\Pr_{x} {Tb}_{1 - x} {Fe}_{1.9}$ alloys

Y. G. Shi; S. L. Tang; R. L. Wang; H. L. Su; Z. D. Han; L. Y. Lv; Y. W. Du

Appl. Phys. Lett. 89, 202503 (2006) https://doi.org/10.1063/1.2387865

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Magnetic field processing to enhance critical current densities of $Mg B_{2}$ superconductors

S. X. Dou; W. K. Yeoh; O. Shcherbakova; J. Horvat; J. H. Kim; A. V. Pan; D. Wexler; Y. Li; W. X. Li; Z. M. Ren; P. Munroe; J. Z. Cui

Appl. Phys. Lett. 89, 202504 (2006) https://doi.org/10.1063/1.2388126

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Domain overlap in antiferromagnetically coupled $[Co ∕ Pt] ∕ Ni O ∕ [Co ∕ Pt]$ multilayers

A. Baruth; L. Yuan; J. D. Burton; K. Janicka; E. Y. Tsymbal; S. H. Liou; S. Adenwalla

Appl. Phys. Lett. 89, 202505 (2006) https://doi.org/10.1063/1.2388892

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Swift-heavy-ion-irradiation-induced enhancement in electrical conductivity of chemical solution deposited ${La}_{0.7} {Ba}_{0.3} Mn O_{3}$ thin films

R. N. Parmar; J. H. Markna; D. G. Kuberkar; Ravi Kumar; D. S. Rana; Vivas C. Bagve; S. K. Malik

Appl. Phys. Lett. 89, 202506 (2006) https://doi.org/10.1063/1.2359291

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Magnetic properties of hydrogenated Li and Co doped ZnO nanoparticles

O. D. Jayakumar; I. K. Gopalakrishnan; K. Shashikala; S. K. Kulshreshtha; C. Sudakar

Appl. Phys. Lett. 89, 202507 (2006) https://doi.org/10.1063/1.2387877

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Magnetoelectric exchange bias systems in spintronics

Xi Chen; Andreas Hochstrat; Pavel Borisov; Wolfgang Kleemann

Appl. Phys. Lett. 89, 202508 (2006) https://doi.org/10.1063/1.2388149

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Diluted magnetic semiconductors with high Curie temperature based on $C 1_{b}$ compounds: $Co {Ti}_{1 - x} {Fe}_{x} Sb$

Kristian Kroth; Benjamin Balke; Gerhard H. Fecher; Vadim Ksenofontov; Claudia Felser; Hong-Ji Lin

Appl. Phys. Lett. 89, 202509 (2006) https://doi.org/10.1063/1.2388876

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Transition metal doping and clustering in Ge

A. Continenza; G. Profeta; S. Picozzi

Appl. Phys. Lett. 89, 202510 (2006) https://doi.org/10.1063/1.2388894

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Giant coercivity nanodots and fractals in CoPt films grown on (001) $Sr Ti O_{3}$ using pulsed laser deposition

R. K. Rakshit; S. K. Bose; R. Sharma; R. C. Budhani

Appl. Phys. Lett. 89, 202511 (2006) https://doi.org/10.1063/1.2388859

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Magneto-optical study of magnetization reversal asymmetry in exchange bias

A. Tillmanns; S. Oertker; B. Beschoten; G. Güntherodt; C. Leighton; Ivan K. Schuller; J. Nogués

Appl. Phys. Lett. 89, 202512 (2006) https://doi.org/10.1063/1.2392283

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Degradation-free interfaces in $Mg B_{2}$ /insulator/Pb Josephson tunnel junctions

Y. Cui; Ke Chen; Qi Li; X. X. Xi; J. M. Rowell

Appl. Phys. Lett. 89, 202513 (2006) https://doi.org/10.1063/1.2388891

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Enhanced flux pinning properties of $Y {Ba}_{2} {Cu}_{3} O_{y}$ by dilute impurity doping for CuO chain

Yui Ishii; Jun-ichi Shimoyama; Yoshiaki Tazaki; Takayoshi Nakashima; Shigeru Horii; Kohji Kishio

Appl. Phys. Lett. 89, 202514 (2006) https://doi.org/10.1063/1.2387979

Abstract

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Enhancement and inverse behaviors of magnetoimpedance in a magnetotunneling junction by driving frequency

W. C. Chien; C. K. Lo; L. C. Hsieh; Y. D. Yao; X. F. Han; Z. M. Zeng; T. Y. Peng; P. Lin

Appl. Phys. Lett. 89, 202515 (2006) https://doi.org/10.1063/1.2374807

Abstract

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Perfluorocyclobutane containing polymeric gate dielectric for organic thin film transistors with high on/off ratio

Jieun Ghim; Kang-Jun Baeg; Yong-Young Noh; Seok-Ju Kang; Jang Jo; Dong-Yu Kim; Shinuk Cho; Jonathan Yuen; Kwanghee Lee; Alan J. Heeger

Appl. Phys. Lett. 89, 202516 (2006) https://doi.org/10.1063/1.2390663

Abstract

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DIELECTRICS AND FERROELECTRICITY

Improvement on the temperature coefficient of resonant frequency of hexagonal perovskites through intergrowth structures

Fei Zhao; Zhenxing Yue; Jing Pei; Hao Zhuang; Zhilun Gui; Longtu Li

Appl. Phys. Lett. 89, 202901 (2006) https://doi.org/10.1063/1.2388141

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Enhanced piezoresistive characteristics of ${Nb}_{2} O_{5}$ modified ${La}_{0.8} {Sr}_{0.2} Mn O_{3}$ ceramics

Vaneet Sharma; Maria R. Hossu; Woo Ho Lee; Ali R. Koymen; Shashank Priya

Appl. Phys. Lett. 89, 202902 (2006) https://doi.org/10.1063/1.2387567

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Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide

Ming Zhu; Chih-Hang Tung; Yee-Chia Yeo

Appl. Phys. Lett. 89, 202903 (2006) https://doi.org/10.1063/1.2388246

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Effects of O vacancies and C doping on dielectric properties of $Zr O_{2}$ ⁠: A first-principles study

Gargi Dutta; K. P. S. S. Hembram; G. Mohan Rao; Umesh V. Waghmare

Appl. Phys. Lett. 89, 202904 (2006) https://doi.org/10.1063/1.2388146

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High performance Aurivillius phase sodium-potassium bismuth titanate lead-free piezoelectric ceramics with lithium and cerium modification

Chun-Ming Wang; Jin-Feng Wang

Appl. Phys. Lett. 89, 202905 (2006) https://doi.org/10.1063/1.2388253

Abstract

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Resistive hystersis effects in perovskite oxide-based heterostructure junctions

M. P. Singh; L. Méchin; W. Prellier; M. Maglione

Appl. Phys. Lett. 89, 202906 (2006) https://doi.org/10.1063/1.2388145

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Impact of thin $Sr Ti O_{3}$ seed layer to achieve low-temperature crystallization below $300 ° C$ and ferroelectricity of lead zirconate titanate thin film

Ji-Won Moon; Shogo Tazawa; Kazuo Shinozaki; Naoki Wakiya; Nobuyasu Mizutani

Appl. Phys. Lett. 89, 202907 (2006) https://doi.org/10.1063/1.2390671

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Low leakage current—stacked $Mg O ∕ {Bi}_{1.5} {Zn}_{1.0} {Nb}_{1.5} O_{7}$ gate insulator— for low voltage ZnO thin film transistors

Mi-Hwa Lim; KyongTae Kang; Ho-Gi Kim; Il-Doo Kim; YongWoo Choi; Harry L. Tuller

Appl. Phys. Lett. 89, 202908 (2006) https://doi.org/10.1063/1.2387985

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Internal photoemission of electrons at interfaces of metals with low- $κ$ insulators

S. Shamuilia; V. V. Afanas’ev; P. Somers; A. Stesmans; Y.-L. Li; Zs. Tőkei; G. Groeseneken; K. Maex

Appl. Phys. Lett. 89, 202909 (2006) https://doi.org/10.1063/1.2360893

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Nanocrystalline barium titanate films on flexible plastic substrates via pulsed laser annealing

Evangelos D. Tsagarakis; Connie Lew; Michael O. Thompson; Emmanuel P. Giannelis

Appl. Phys. Lett. 89, 202910 (2006) https://doi.org/10.1063/1.2387964

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NANOSCALE SCIENCE AND DESIGN

Electrostatic and structural properties of GaN nanorods/nanowires from first principles

M.-H. Tsai; Z.-F. Jhang; J.-Y. Jiang; Y.-H. Tang; L. W. Tu

Appl. Phys. Lett. 89, 203101 (2006) https://doi.org/10.1063/1.2388129

Abstract

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Fluorescence in nanostructured fulleride films

R. F. M. Lobo; M. S. Costa; J. H. F. Ribeiro; C. A. C. Sequeira; P. Pereira

Appl. Phys. Lett. 89, 203102 (2006) https://doi.org/10.1063/1.2388245

Abstract

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Stable, three layered organic memory devices from $C_{60}$ molecules and insulating polymers

Alokik Kanwal; Manish Chhowalla

Appl. Phys. Lett. 89, 203103 (2006) https://doi.org/10.1063/1.2388131

Abstract

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${Si}_{1 - y} C_{y}$ surface alloys used as self-patterned templates for the growth of Ge dots

L. Simon; D. Aubel; L. Kubler

Appl. Phys. Lett. 89, 203104 (2006) https://doi.org/10.1063/1.2387113

Abstract

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Semiclassical approach for determination of the intergranular energy barrier height in very-fine nanograins

V. Guidi; C. Malagù; G. Martinelli; S. Cozzolino; M. Padula

Appl. Phys. Lett. 89, 203105 (2006) https://doi.org/10.1063/1.2388247

Abstract

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Highly efficient top-emitting organic light-emitting diodes with self-assembed monolayer-modified Ag as anodes

Ming-Chin Hung; Kun-Yang Wu; Yu-Tai Tao; Hung-Wei Huang

Appl. Phys. Lett. 89, 203106 (2006) https://doi.org/10.1063/1.2388880

Abstract

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Comparison of performance limits for carbon nanoribbon and carbon nanotube transistors

Yijian Ouyang; Youngki Yoon; James K. Fodor; Jing Guo

Appl. Phys. Lett. 89, 203107 (2006) https://doi.org/10.1063/1.2387876

Abstract

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Atomic scale observation of corner-voiding effects in advanced interconnects

C. Guedj; J. P. Barnes; A. M. Papon

Appl. Phys. Lett. 89, 203108 (2006) https://doi.org/10.1063/1.2372690

Abstract

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Doping and hydrogen passivation of boron in silicon nanowires synthesized by laser ablation

N. Fukata; J. Chen; T. Sekiguchi; N. Okada; K. Murakami; T. Tsurui; S. Ito

Appl. Phys. Lett. 89, 203109 (2006) https://doi.org/10.1063/1.2372698

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Size-dependent photoluminescence of hexagonal nanopillars with single $In Ga As ∕ Ga As$ quantum wells fabricated by selective-area metal organic vapor phase epitaxy

L. Yang; J. Motohisa; J. Takeda; K. Tomioka; T. Fukui

Appl. Phys. Lett. 89, 203110 (2006) https://doi.org/10.1063/1.2372710

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Simulation of a carbon nanotube-based compliant parallel-guiding mechanism: A nanomechanical building block

Martin L. Culpepper; Christopher M. DiBiasio; Robert M. Panas; Spencer Magleby; Larry L. Howell

Appl. Phys. Lett. 89, 203111 (2006) https://doi.org/10.1063/1.2388143

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$La B_{6}$ tip-modified multiwalled carbon nanotube as high quality field emission electron source

Wei Wei; Kaili Jiang; Yang Wei; Peng Liu; Kai Liu; Lina Zhang; Qunqing Li; Shoushan Fan

Appl. Phys. Lett. 89, 203112 (2006) https://doi.org/10.1063/1.2388862

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Dependence of resonant coupling between surface plasmons and an InGaN quantum well on metallic structure

Cheng-Yen Chen; Dong-Ming Yeh; Yen-Cheng Lu; C. C. Yang

Appl. Phys. Lett. 89, 203113 (2006) https://doi.org/10.1063/1.2390639

Abstract

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Surface contamination effects on resistance of gold nanowires

Carmen M. Lilley; Qiaojian Huang

Appl. Phys. Lett. 89, 203114 (2006) https://doi.org/10.1063/1.2388133

Abstract

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Enhanced elastic interactions between conical quantum dots

Simon P. A. Gill

Appl. Phys. Lett. 89, 203115 (2006) https://doi.org/10.1063/1.2390651

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Formation and optical characteristics of strain-relieved and densely stacked $Ga Sb ∕ Ga As$ quantum dots

J. Tatebayashi; A. Khoshakhlagh; S. H. Huang; L. R. Dawson; G. Balakrishnan; D. L. Huffaker

Appl. Phys. Lett. 89, 203116 (2006) https://doi.org/10.1063/1.2390654

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Determination of carrier density of ZnO nanowires by electrochemical techniques

Iván Mora-Seró; Francisco Fabregat-Santiago; Benjamin Denier; Juan Bisquert; Ramón Tena-Zaera; Jamil Elias; Claude Lévy-Clément

Appl. Phys. Lett. 89, 203117 (2006) https://doi.org/10.1063/1.2390667

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Planar nanoscale architecture for organic thin-film field-effect transistors

Daniel Fine; Liang Wang; Deepak Sharma; Ananth Dodabalapur

Appl. Phys. Lett. 89, 203118 (2006) https://doi.org/10.1063/1.2388569

Abstract

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Self-assembly of ultrafine nanolines upon Ho reaction with the Ge(001) surface

C. Bonet; S. P. Tear

Appl. Phys. Lett. 89, 203119 (2006) https://doi.org/10.1063/1.2390636

Abstract

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Synthesis of high quality $n$ -type CdS nanobelts and their applications in nanodevices

R. M. Ma; L. Dai; H. B. Huo; W. Q. Yang; G. G. Qin; P. H. Tan; C. H. Huang; J. Zheng

Appl. Phys. Lett. 89, 203120 (2006) https://doi.org/10.1063/1.2387982

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Anisotropic broadening of Cu nanorods during glancing angle deposition

S. V. Kesapragada; D. Gall

Appl. Phys. Lett. 89, 203121 (2006) https://doi.org/10.1063/1.2388861

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Time-dependent quantum transport and nonquasistatic effects in carbon nanotube transistors

Yupeng Chen; Yijian Ouyang; Jing Guo; Thomas X. Wu

Appl. Phys. Lett. 89, 203122 (2006) https://doi.org/10.1063/1.2388881

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DEVICE PHYSICS

Electrolyte-gated charge accumulation in organic single crystals

Hidekazu Shimotani; Haruhiko Asanuma; Jun Takeya; Yoshihiro Iwasa

Appl. Phys. Lett. 89, 203501 (2006) https://doi.org/10.1063/1.2387884

Abstract

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Pentacene devices and logic gates fabricated by organic vapor phase deposition

Cédric Rolin; Soeren Steudel; Kris Myny; David Cheyns; Stijn Verlaak; Jan Genoe; Paul Heremans

Appl. Phys. Lett. 89, 203502 (2006) https://doi.org/10.1063/1.2388864

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Trapping mechanism on oxygen-terminated diamond surfaces

Yutaka Itoh; Yu Sumikawa; Hitoshi Umezawa; Hiroshi Kawarada

Appl. Phys. Lett. 89, 203503 (2006) https://doi.org/10.1063/1.2387983

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Wavelength tunable device for neutron radiography and tomography

W. Treimer; M. Strobl; N. Kardjilov; A. Hilger; I. Manke

Appl. Phys. Lett. 89, 203504 (2006) https://doi.org/10.1063/1.2384801

Abstract

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Improvements in the device characteristics of random-network single-walled carbon nanotube transistors by using high- $κ$ gate insulators

Megumi Ohishi; Masashi Shiraishi; Kenji Ochi; Yoshihiro Kubozono; Hiromichi Kataura

Appl. Phys. Lett. 89, 203505 (2006) https://doi.org/10.1063/1.2388150

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Organic tandem solar cells comprising polymer and small-molecule subcells

Alexander Colsmann; Johannes Junge; Christian Kayser; Uli Lemmer

Appl. Phys. Lett. 89, 203506 (2006) https://doi.org/10.1063/1.2388938

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Polarization-independent liquid crystal grating on azo-dye film fabricated through intensity holography

Xuemin Lu; Qinghua Lu; Fuk Kay Lee; Ophelia K. C. Tsui

Appl. Phys. Lett. 89, 203507 (2006) https://doi.org/10.1063/1.2388940

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Hot carrier type exchange in inorganic electroluminescent thin films

Katsu Tanaka; Shinji Okamoto

Appl. Phys. Lett. 89, 203508 (2006) https://doi.org/10.1063/1.2388942

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Influence of contact effect on the performance of microcrystalline silicon thin-film transistors

Kah-Yoong Chan; Eerke Bunte; Helmut Stiebig; Dietmar Knipp

Appl. Phys. Lett. 89, 203509 (2006) https://doi.org/10.1063/1.2390634

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Metal electrode effects on spin-orbital coupling and magnetoresistance in organic semiconductor devices

Yue Wu; Bin Hu

Appl. Phys. Lett. 89, 203510 (2006) https://doi.org/10.1063/1.2387118

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Increasing the $Q$ factor in the constant-excitation mode of frequency-modulation atomic force microscopy in liquid

D. Ebeling; H. Hölscher; B. Anczykowski

Appl. Phys. Lett. 89, 203511 (2006) https://doi.org/10.1063/1.2387122

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Thermally actuated untethered impact-driven locomotive microdevices

O. J. Sul; M. R. Falvo; R. M. Taylor, II; S. Washburn; R. Superfine

Appl. Phys. Lett. 89, 203512 (2006) https://doi.org/10.1063/1.2388135

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Cryogenic sapphire oscillator with exceptionally high long-term frequency stability

J. G. Hartnett; C. R. Locke; E. N. Ivanov; M. E. Tobar; P. L. Stanwix

Appl. Phys. Lett. 89, 203513 (2006) https://doi.org/10.1063/1.2387969

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APPLIED BIOPHYSICS

Refractive index measurement of single living cells using on-chip Fabry-Pérot cavity

W. Z. Song; X. M. Zhang; A. Q. Liu; C. S. Lim; P. H. Yap; Habib Mir M. Hosseini

Appl. Phys. Lett. 89, 203901 (2006) https://doi.org/10.1063/1.2387965

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Detection of electrical characteristics of DNA strands immobilized on self-assembled multilayer gold nanoparticles

Chien-Ying Tsai; Tien-Li Chang; Long-Sheng Kuo; Ping-Hei Chen

Appl. Phys. Lett. 89, 203902 (2006) https://doi.org/10.1063/1.2390653

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INTERDISCIPLINARY AND GENERAL PHYSICS

Hollow core photonic crystal fiber surface-enhanced Raman probe

He Yan; Claire Gu; Changxi Yang; Jie Liu; Guofan Jin; Jiatao Zhang; Lantian Hou; Yuan Yao

Appl. Phys. Lett. 89, 204101 (2006) https://doi.org/10.1063/1.2388937

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Improvement of the thermoelectric characteristics of Fe-doped misfit-layered ${Ca}_{3} {Co}_{4 - x} {Fe}_{x} O_{9 + δ}$ (⁠ $x =$ ⁠, 0.05, 0.1, and 0.2)

Chia-Jyi Liu; Li-Chen Huang; Jung-Sheng Wang

Appl. Phys. Lett. 89, 204102 (2006) https://doi.org/10.1063/1.2390666

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ERRATA

Erratum: “Strong electric field and nonuniformity effects in $GaN ∕ AlN$ quantum dots revealed by high pressure studies” [Appl. Phys. Lett. 89, 051902 (2006)]

H. Teisseyre; T. Suski; S. P. Łepkowski; P. Perlin; G. Jurczak; P. Dłużewski; B. Daudin; N. Grandjean

Appl. Phys. Lett. 89, 209901 (2006) https://doi.org/10.1063/1.2382722

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

APPLIED BIOPHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

ERRATA

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