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LASERS, OPTICS, AND OPTOELECTRONICS

Organic diodes as monolithically integrated surface plasmon polariton detectors

H. Ditlbacher; F. R. Aussenegg; J. R. Krenn; B. Lamprecht; G. Jakopic; G. Leising

Appl. Phys. Lett. 89, 161101 (2006) https://doi.org/10.1063/1.2362975

Abstract

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Low threshold current density distributed feedback quantum cascade lasers with deep top gratings

Gangyi Xu; Aizhen Li; Yaoyao Li; Lin Wei; Yonggang Zhang; Chun Lin; Hua Li

Appl. Phys. Lett. 89, 161102 (2006) https://doi.org/10.1063/1.2362580

Abstract

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Conditions for designing single-mode air-core waveguides in three-dimensional photonic crystals

Virginie Lousse; Jonghwa Shin; Shanhui Fan

Appl. Phys. Lett. 89, 161103 (2006) https://doi.org/10.1063/1.2362983

Abstract

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III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs

G. Balakrishnan; J. Tatebayashi; A. Khoshakhlagh; S. H. Huang; A. Jallipalli; L. R. Dawson; D. L. Huffaker

Appl. Phys. Lett. 89, 161104 (2006) https://doi.org/10.1063/1.2362999

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Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template

D. S. Wuu; W. K. Wang; K. S. Wen; S. C. Huang; S. H. Lin; S. Y. Huang; C. F. Lin; R. H. Horng

Appl. Phys. Lett. 89, 161105 (2006) https://doi.org/10.1063/1.2363148

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Interband cascade laser operating cw to $257 K$ at $λ = 3.7 μ m$

W. W. Bewley; J. A. Nolde; D. C. Larrabee; C. L. Canedy; C. S. Kim; M. Kim; I. Vurgaftman; J. R. Meyer

Appl. Phys. Lett. 89, 161106 (2006) https://doi.org/10.1063/1.2363169

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Locating hexagonal and cubic phases in boron nitride using wavelength-selective optically detected x-ray absorption spectroscopy

D. A. Evans; A. R. Vearey-Roberts; N. R. J. Poolton

Appl. Phys. Lett. 89, 161107 (2006) https://doi.org/10.1063/1.2360910

Abstract

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High intensity light propagation in InAs

Srinivasan Krishnamurthy; Zhi Gang Yu; Shekhar Guha; Leo Gonzalez

Appl. Phys. Lett. 89, 161108 (2006) https://doi.org/10.1063/1.2363970

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Fiber Bragg grating microphone system

Lipi Mohanty; Liang Mong Koh; Swee Chuan Tjin

Appl. Phys. Lett. 89, 161109 (2006) https://doi.org/10.1063/1.2363977

Abstract

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Microdroplet deposition of copper film by femtosecond laser-induced forward transfer

Li Yang; Ching-yue Wang; Xiao-chang Ni; Zhi-jun Wang; Wei Jia; Lu Chai

Appl. Phys. Lett. 89, 161110 (2006) https://doi.org/10.1063/1.2364457

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Highly efficient optical pumping of photonic crystal nanocavity lasers using cavity resonant excitation

Masahiro Nomura; Satoshi Iwamoto; Masao Nishioka; Satomi Ishida; Yasuhiko Arakawa

Appl. Phys. Lett. 89, 161111 (2006) https://doi.org/10.1063/1.2369543

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Highly sensitive organic ultraviolet optical sensor based on phosphorescent Cu (I) complex

Zhiguo Kong; Wenlian Li; Guangbo Che; Bei Chu; Defeng Bi; Liangliang Han; Lili Chen; Zhizhi Hu; Zhiqiang Zhang

Appl. Phys. Lett. 89, 161112 (2006) https://doi.org/10.1063/1.2364156

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Low loss contacts for organic semiconductor lasers

P. Görrn; T. Rabe; T. Riedl; W. Kowalsky; F. Galbrecht; U. Scherf

Appl. Phys. Lett. 89, 161113 (2006) https://doi.org/10.1063/1.2360936

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Diffraction-aided laser-induced microstructuring of thin $Ti O_{2}$ films on glass

O. Van Overschelde; M. Wautelet

Appl. Phys. Lett. 89, 161114 (2006) https://doi.org/10.1063/1.2364462

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Large electro-optic effect in tensile strained Ge-on-Si films

Samerkhae Jongthammanurak; Jifeng Liu; Kazumi Wada; Douglas D. Cannon; David T. Danielson; Dong Pan; Lionel C. Kimerling; Jurgen Michel

Appl. Phys. Lett. 89, 161115 (2006) https://doi.org/10.1063/1.2363948

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PLASMAS AND ELECTRICAL DISCHARGES

Electron energy distribution function close to the mode transition region in an inductively coupled gaseous electronics conference reference cell

S. V. Singh; P. Kempkes; H. Soltwisch

Appl. Phys. Lett. 89, 161501 (2006) https://doi.org/10.1063/1.2362599

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Characteristics of radio-frequency, atmospheric-pressure glow discharges with air using bare metal electrodes

Hua-Bo Wang; Wen-Ting Sun; He-Ping Li; Cheng-Yu Bao; Xiao-Zhang Zhang

Appl. Phys. Lett. 89, 161502 (2006) https://doi.org/10.1063/1.2363040

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Anomalous cross field electron transport in a Hall effect thruster

C. Boniface; L. Garrigues; G. J. M. Hagelaar; J. P. Boeuf; D. Gawron; S. Mazouffre

Appl. Phys. Lett. 89, 161503 (2006) https://doi.org/10.1063/1.2360182

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Discharge characteristics of atmospheric-pressure radio-frequency glow discharges with argon/nitrogen

Hua-Bo Wang; Wen-Ting Sun; He-Ping Li; Cheng-Yu Bao; Xing Gao; Hui-Ying Luo

Appl. Phys. Lett. 89, 161504 (2006) https://doi.org/10.1063/1.2362631

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Submicrosecond pulsed atmospheric glow discharges sustained without dielectric barriers at kilohertz frequencies

J. L. Walsh; J. J. Shi; M. G. Kong

Appl. Phys. Lett. 89, 161505 (2006) https://doi.org/10.1063/1.2361274

Abstract

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Driving frequency effect on the electron energy distribution function in capacitive discharge under constant discharge power condition

S. K. Ahn; S. J. You; H. Y. Chang

Appl. Phys. Lett. 89, 161506 (2006) https://doi.org/10.1063/1.2363945

Abstract

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Deformation around a nanosized elliptical hole with surface effect

G. F. Wang; T. J. Wang

Appl. Phys. Lett. 89, 161901 (2006) https://doi.org/10.1063/1.2362988

Abstract

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Ultrahigh damping in $R$ -phase state of Ti–Ni–Fe alloy

Genlian Fan; Yumei Zhou; Kazuhiro Otsuka; Xiaobing Ren

Appl. Phys. Lett. 89, 161902 (2006) https://doi.org/10.1063/1.2363173

Abstract

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Determination of polarization charge density on interface of $Al Ga N ∕ Ga N$ heterostructure by electroreflectance

Dong-Po Wang; Chi-Chang Wu; Chia-Chun Wu

Appl. Phys. Lett. 89, 161903 (2006) https://doi.org/10.1063/1.2360909

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Evidences of an intermediate rodlike defect during the transformation of {113} defects into dislocation loops

S. Boninelli; N. Cherkashin; A. Claverie; F. Cristiano

Appl. Phys. Lett. 89, 161904 (2006) https://doi.org/10.1063/1.2361178

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Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence

N. Pauc; M. R. Phillips; V. Aimez; D. Drouin

Appl. Phys. Lett. 89, 161905 (2006) https://doi.org/10.1063/1.2357881

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Structural stability and elastic property of the $L 1_{2}$ ordered ${Co}_{3} (Al, W)$ precipitate

Q. Yao; H. Xing; J. Sun

Appl. Phys. Lett. 89, 161906 (2006) https://doi.org/10.1063/1.2362574

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Direct strain measurement in a $65 nm$ node strained silicon transistor by convergent-beam electron diffraction

Peng Zhang; Andrei A. Istratov; Eicke R. Weber; Christian Kisielowski; Haifeng He; Chris Nelson; John C. H. Spence

Appl. Phys. Lett. 89, 161907 (2006) https://doi.org/10.1063/1.2362978

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Effect of uniaxial strain on anisotropic diffusion in silicon

Ming-Jer Chen; Yi-Ming Sheu

Appl. Phys. Lett. 89, 161908 (2006) https://doi.org/10.1063/1.2362980

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Nanocluster formation in Fe implanted GaN

G. Talut; H. Reuther; A. Mücklich; F. Eichhorn; K. Potzger

Appl. Phys. Lett. 89, 161909 (2006) https://doi.org/10.1063/1.2363960

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Rapid solid-phase crystallization of high-rate, hot-wire chemical-vapor-deposited hydrogenated amorphous silicon

David L. Young; Paul Stradins; Yueqin Xu; Lynn Gedvilas; Bob Reedy; A. H. Mahan; Howard M. Branz; Qi Wang; D. L. Williamson

Appl. Phys. Lett. 89, 161910 (2006) https://doi.org/10.1063/1.2361163

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Thermal conductivity contrast measurement of fused silica exposed to low-energy femtosecond laser pulses

Yves Bellouard; Mark Dugan; Ali A. Said; Philippe Bado

Appl. Phys. Lett. 89, 161911 (2006) https://doi.org/10.1063/1.2363957

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Room temperature photoluminescence from ZnO quantum wells grown on (0001) sapphire using buffer assisted pulsed laser deposition

P. Misra; T. K. Sharma; S. Porwal; L. M. Kukreja

Appl. Phys. Lett. 89, 161912 (2006) https://doi.org/10.1063/1.2360222

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Dephasing of Bloch oscillating electrons in GaAs-based superlattices due to interface roughness scattering

T. Unuma; N. Sekine; K. Hirakawa

Appl. Phys. Lett. 89, 161913 (2006) https://doi.org/10.1063/1.2360911

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Gas-phase synthesis of magnesium nanoparticles: A high-resolution transmission electron microscopy study

B. J. Kooi; G. Palasantzas; J. Th. M. De Hosson

Appl. Phys. Lett. 89, 161914 (2006) https://doi.org/10.1063/1.2358860

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Indium adsorption on GaN under metal-organic chemical vapor deposition conditions

F. Jiang; R.-V. Wang; A. Munkholm; S. K. Streiffer; G. B. Stephenson; P. H. Fuoss; K. Latifi; Carol Thompson

Appl. Phys. Lett. 89, 161915 (2006) https://doi.org/10.1063/1.2364060

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Mechanisms and control of phase transition in thermally grown aluminas

B. W. Veal; A. P. Paulikas; R. C. Birtcher

Appl. Phys. Lett. 89, 161916 (2006) https://doi.org/10.1063/1.2364124

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Effect of the surface coating on the magnetic nanoparticle smectic-A liquid crystal interaction

L. J. Martínez-Miranda; Kevin McCarthy; L. K Kurihara; Jason J. Harry; Alexis Noel

Appl. Phys. Lett. 89, 161917 (2006) https://doi.org/10.1063/1.2359430

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Molded electromechanical shift register memories

Gary M. McClelland; Bayu Atmaja

Appl. Phys. Lett. 89, 161918 (2006) https://doi.org/10.1063/1.2364458

Abstract

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Supplementary Material

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Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory

P. Rinke; M. Scheffler; A. Qteish; M. Winkelnkemper; D. Bimberg; J. Neugebauer

Appl. Phys. Lett. 89, 161919 (2006) https://doi.org/10.1063/1.2364469

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Temperature dependence of Raman scattering in GaMnN

L. L. Guo; Y. H. Zhang; W. Z. Shen

Appl. Phys. Lett. 89, 161920 (2006) https://doi.org/10.1063/1.2364472

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Thermal conductivity of diamond-like carbon films

M. Shamsa; W. L. Liu; A. A. Balandin; C. Casiraghi; W. I. Milne; A. C. Ferrari

Appl. Phys. Lett. 89, 161921 (2006) https://doi.org/10.1063/1.2362601

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Cracking of III-nitride layers with strain gradients

A. E. Romanov; G. E. Beltz; P. Cantu; F. Wu; S. Keller; S. P. DenBaars; J. S. Speck

Appl. Phys. Lett. 89, 161922 (2006) https://doi.org/10.1063/1.2352043

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Formation of a body-centered-cubic Fe-based alloy at the $Fe ∕ Ga As (001)$ interface

P. Schieffer; A. Guivarc’h; C. Lallaizon; B. Lépine; D. Sébilleau; P. Turban; G. Jézéquel

Appl. Phys. Lett. 89, 161923 (2006) https://doi.org/10.1063/1.2364063

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In situ observation of the grain growth of the copper electrodeposits for ultralarge scale integration

Hyo-Jong Lee; Heung Nam Han; Do Hyun Kim; Ui-hyoung Lee; Kyu Hwan Oh; Pil-Ryung Cha

Appl. Phys. Lett. 89, 161924 (2006) https://doi.org/10.1063/1.2364119

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Growth of long wavelength ${In}_{x} {Ga}_{1 - x} {As}_{y} {Sb}_{1 - y}$ layers on GaAs from liquid phase

A. Kumar; P. S. Dutta

Appl. Phys. Lett. 89, 162101 (2006) https://doi.org/10.1063/1.2360899

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High resolution photoemission spectroscopy: Evidence for strong chemical interaction between Mg and 3,4,9,10-perylene-tetracarboxylic dianhydride

G. Gavrila; D. R. T. Zahn; W. Braun

Appl. Phys. Lett. 89, 162102 (2006) https://doi.org/10.1063/1.2356305

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Magnetotransport properties of Ge channels with extremely high compressive strain

K. Sawano; Y. Kunishi; Y. Shiraki; K. Toyama; T. Okamoto; N. Usami; K. Nakagawa

Appl. Phys. Lett. 89, 162103 (2006) https://doi.org/10.1063/1.2354467

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Electron transport in semiconducting chiral carbon nanotubes

M. Z. Kauser; P. P. Ruden

Appl. Phys. Lett. 89, 162104 (2006) https://doi.org/10.1063/1.2362973

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Improved memory window for Ge nanocrystals embedded in SiON layer

Chun-Hao Tu; Ting-Chang Chang; Po-Tsun Liu; Hsin-Chou Liu; Simon M. Sze; Chun-Yen Chang

Appl. Phys. Lett. 89, 162105 (2006) https://doi.org/10.1063/1.2362972

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Bias dependent inversion of tunneling magnetoresistance in $Fe ∕ Ga As ∕ Fe$ tunnel junctions

J. Moser; M. Zenger; C. Gerl; D. Schuh; R. Meier; P. Chen; G. Bayreuther; W. Wegscheider; D. Weiss; C.-H. Lai; R.-T. Huang; M. Kosuth; H. Ebert

Appl. Phys. Lett. 89, 162106 (2006) https://doi.org/10.1063/1.2364163

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Electrode-molecular semiconductor contacts: Work-function-dependent hole injection barriers versus Fermi-level pinning

N. Koch; A. Vollmer

Appl. Phys. Lett. 89, 162107 (2006) https://doi.org/10.1063/1.2364166

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Charge-injection-induced dynamic screening and origin of hysteresis in field-modulated transport in single-wall carbon nanotubes

Aravind Vijayaraghavan; Swastik Kar; Caterina Soldano; Saikat Talapatra; Omkaram Nalamasu; Pulickel M. Ajayan

Appl. Phys. Lett. 89, 162108 (2006) https://doi.org/10.1063/1.2362586

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Intrinsic ferromagnetic properties of ${Ti}_{0.94} {Fe}_{0.06} O_{2} ∕ {Ti}_{0.94} {Mn}_{0.06} O_{2}$ superlattice films for dilute magnetic semiconductor applications

Nak-Jin Seong; Soon-Gil Yoon; Young-Hun Jo; Myung-Hwa Jung; Chae-Ryong Cho; Jun-Mo Yang; Dong-Jun Park; Jae-Wook Lee; Jeong-Yong Lee

Appl. Phys. Lett. 89, 162109 (2006) https://doi.org/10.1063/1.2360234

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Effect of dislocation scattering on the transport properties of InN grown on GaN substrates by molecular beam epitaxy

Kejia (Albert) Wang; Yu Cao; John Simon; Jing Zhang; Alexander Mintairov; James Merz; Douglas Hall; Thomas Kosel; Debdeep Jena

Appl. Phys. Lett. 89, 162110 (2006) https://doi.org/10.1063/1.2364456

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Validity/invalidity of Schottky-Mott rules for Schottky contacts to III-V nitride semiconductor heterostructures

Changzhi Lu; S. Noor Mohammad

Appl. Phys. Lett. 89, 162111 (2006) https://doi.org/10.1063/1.2358956

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MAGNETISM AND SUPERCONDUCTIVITY

Influence of annealing on the bias voltage dependence of tunneling magnetoresistance in MgO double-barrier magnetic tunnel junctions with CoFeB electrodes

Gen Feng; Sebastiaan van Dijken; J. M. D. Coey

Appl. Phys. Lett. 89, 162501 (2006) https://doi.org/10.1063/1.2362977

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Magnetic glassy phase in ${Zn}_{0.85} {Fe}_{0.15} O$ diluted magnetic semiconducting nanoparticles

S. K. Mandal; T. K. Nath; A. Das; R. K. Kremer

Appl. Phys. Lett. 89, 162502 (2006) https://doi.org/10.1063/1.2363140

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Large magnetoresistance in single-crystalline ${Ni}_{50} {Mn}_{50 - x} {In}_{x}$ alloys $(x = 14 - 16)$ upon martensitic transformation

S. Y. Yu; Z. H. Liu; G. D. Liu; J. L. Chen; Z. X. Cao; G. H. Wu; B. Zhang; X. X. Zhang

Appl. Phys. Lett. 89, 162503 (2006) https://doi.org/10.1063/1.2362581

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Grain size reduction in $Co Cr Pt : Si O_{2}$ perpendicular recording media with oxide-based intermediate layers

S. N. Piramanayagam; C. K. Pock; L. Lu; C. Y. Ong; J. Z. Shi; C. S. Mah

Appl. Phys. Lett. 89, 162504 (2006) https://doi.org/10.1063/1.2362643

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Electric-field control of ferromagnetism in (Ga,Mn)As

D. Chiba; F. Matsukura; H. Ohno

Appl. Phys. Lett. 89, 162505 (2006) https://doi.org/10.1063/1.2362971

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Large tunnel magnetoresistance in tunnel junctions with ${Co}_{2} Mn Si ∕ {Co}_{2} Fe Si$ multilayer electrode

D. Ebke; J. Schmalhorst; N.-N. Liu; A. Thomas; G. Reiss; A. Hütten

Appl. Phys. Lett. 89, 162506 (2006) https://doi.org/10.1063/1.2363939

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Ultralow resistance-area product of $0.4 Ω {(μ m)}^{2}$ and high magnetoresistance above 50% in $Co Fe B ∕ Mg O ∕ Co Fe B$ magnetic tunnel junctions

Yoshinori Nagamine; Hiroki Maehara; Koji Tsunekawa; David D. Djayaprawira; Naoki Watanabe; Shinji Yuasa; Koji Ando

Appl. Phys. Lett. 89, 162507 (2006) https://doi.org/10.1063/1.2352046

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Ultrasonic study on magnetic-field-induced stripe order in ${La}_{1.88} {Sr}_{0.12 - x} {Ba}_{x} Cu O_{4}$

J. F. Qu; Y. Q. Zhang; X. L. Lu; X. Q. Xiang; Y. L. Liao; G. Li; X. G. Li

Appl. Phys. Lett. 89, 162508 (2006) https://doi.org/10.1063/1.2364120

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Analytical electron microscopy study of growth mechanism for smoothing of metallic multilayer thin films

O. Ozatay; K. A. Mkhoyan; M. G. Thomas; G. D. Fuchs; J. Silcox; R. A. Buhrman

Appl. Phys. Lett. 89, 162509 (2006) https://doi.org/10.1063/1.2358958

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Stacking faults in $Y {Ba}_{2} {Cu}_{3} O_{7 - x}$ ⁠: Measurement using x-ray diffraction and effects on critical current

E. D. Specht; A. Goyal; J. Li; P. M. Martin; X. Li; M. W. Rupich

Appl. Phys. Lett. 89, 162510 (2006) https://doi.org/10.1063/1.2364185

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Anisotropic Sm–Fe–N magnets produced by compression shearing method

Tetsuji Saito; Hisanobu Sato; Hiroyuku Takeishi; Noboru Nakayama

Appl. Phys. Lett. 89, 162511 (2006) https://doi.org/10.1063/1.2362589

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DIELECTRICS AND FERROELECTRICITY

Scaling behavior of dynamic hysteresis in soft lead zirconate titanate bulk ceramics

Rattikorn Yimnirun; Yongyut Laosiritaworn; Supattra Wongsaenmai; Supon Ananta

Appl. Phys. Lett. 89, 162901 (2006) https://doi.org/10.1063/1.2363143

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Phase transition and high dielectric constant of bulk dense nanograin barium titanate ceramics

Xiaohui Wang; Xiangyun Deng; Hai Wen; Longtu Li

Appl. Phys. Lett. 89, 162902 (2006) https://doi.org/10.1063/1.2363930

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Reduction of gate leakage current of HfSiON dielectrics through enhanced phonon-energy coupling

Chandan B. Samantaray; Zhi Chen

Appl. Phys. Lett. 89, 162903 (2006) https://doi.org/10.1063/1.2363139

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Antiferroelectricity in multiferroic $Bi Cr O_{3}$ epitaxial films

Dae Ho Kim; Ho Nyung Lee; Maria Varela; Hans M. Christen

Appl. Phys. Lett. 89, 162904 (2006) https://doi.org/10.1063/1.2362585

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Quantum chemical study of the initial surface reactions of $Hf O_{2}$ atomic layer deposition on the hydroxylated $Ga As (001) - 4 \times 2$ surface

Hong-Liang Lu; Min Xu; Shi-Jin Ding; Wei Chen; David Wei Zhang; Li-Kang Wang

Appl. Phys. Lett. 89, 162905 (2006) https://doi.org/10.1063/1.2370425

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Mn-doped $0.71 Pb ({Mg}_{1 ∕ 3} {Nb}_{2 ∕ 3}) O_{3} - 0.29 Pb Ti O_{3}$ pyroelectric crystals for uncooled infrared focal plane arrays applications

Yanxue Tang; Laihui Luo; Yanmin Jia; Haosu Luo; Xiangyong Zhao; Haiqing Xu; Di Lin; Jinglan Sun; Xiangjian Meng; Junhao Zhu; Mohammed Es-Souni

Appl. Phys. Lett. 89, 162906 (2006) https://doi.org/10.1063/1.2363149

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Correlation between grain size and domain size distributions in ferroelectric media for probe storage applications

Yunseok Kim; Youngsang Cho; Seungbum Hong; Simon Bühlmann; Hongsik Park; Dong-Ki Min; Seung-Hyun Kim; Kwangsoo No

Appl. Phys. Lett. 89, 162907 (2006) https://doi.org/10.1063/1.2363942

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Surface core-level shifts of strontium observed in photoemission of barium strontium titanate thin films

J. D. Baniecki; M. Ishii; T. Shioga; K. Kurihara; S. Miyahara

Appl. Phys. Lett. 89, 162908 (2006) https://doi.org/10.1063/1.2357880

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Ultraviolet driven negative current and rectifier effect in self-assembled green fluorescent protein device

Z. G. Chiragwandi; K. Gillespie; Q. X. Zhao; M. Willander; I. Panas

Appl. Phys. Lett. 89, 162909 (2006) https://doi.org/10.1063/1.2357893

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Experimental technique for characterizing arbitrary aspect ratio piezoelectric resonators

Moojoon Kim; Jungsoon Kim; Wenwu Cao

Appl. Phys. Lett. 89, 162910 (2006) https://doi.org/10.1063/1.2364465

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Spatial and energetic distribution of border traps in the dual-layer $Hf O_{2} ∕ Si O_{2}$ high- $k$ gate stack by low-frequency capacitance-voltage measurement

Wei-Hao Wu; Bing-Yue Tsui; Mao-Chieh Chen; Yong-Tian Hou; Yin Jin; Hun-Jan Tao; Shih-Chang Chen; Mong-Song Liang

Appl. Phys. Lett. 89, 162911 (2006) https://doi.org/10.1063/1.2364064

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Influence of carrier injection on resistive switching of $Ti O_{2}$ thin films with Pt electrodes

Kyung Min Kim; Byung Joon Choi; Doo Seok Jeong; Cheol Seong Hwang; Seungwu Han

Appl. Phys. Lett. 89, 162912 (2006) https://doi.org/10.1063/1.2361268

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NANOSCALE SCIENCE AND DESIGN

Nanowire-based multiple quantum dot memory

Henrik A. Nilsson; Claes Thelander; Linus E. Fröberg; Jakob B. Wagner; Lars Samuelson

Appl. Phys. Lett. 89, 163101 (2006) https://doi.org/10.1063/1.2362594

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Tunable room temperature low-field spin polarized tunneling magnetoresistance of ${La}_{0.7} {Sr}_{0.3} Mn O_{3}$ nanoparticles

P. Dey; T. K. Nath

Appl. Phys. Lett. 89, 163102 (2006) https://doi.org/10.1063/1.2362595

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Distance dependent interaction as the limiting factor for Si nanocluster to Er energy transfer in silica

B. Garrido; C. García; P. Pellegrino; D. Navarro-Urrios; N. Daldosso; L. Pavesi; F. Gourbilleau; R. Rizk

Appl. Phys. Lett. 89, 163103 (2006) https://doi.org/10.1063/1.2362600

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Phonon transport through a three-dimensional abrupt junction

Wen-Xia Li; Tianyu Liu; Changlong Liu

Appl. Phys. Lett. 89, 163104 (2006) https://doi.org/10.1063/1.2362970

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Two-color upconversion in rare-earth-ion-doped $Zr O_{2}$ nanocrystals

G. Y. Chen; Y. G. Zhang; G. Somesfalean; Z. G. Zhang; Q. Sun; F. P. Wang

Appl. Phys. Lett. 89, 163105 (2006) https://doi.org/10.1063/1.2363146

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Photoelectrochemical water splitting at titanium dioxide nanotubes coated with tungsten trioxide

Jong Hyeok Park; O Ok Park; Sungwook Kim

Appl. Phys. Lett. 89, 163106 (2006) https://doi.org/10.1063/1.2357878

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Visible light emission from single layer Si nanodots fabricated by laser irradiation method

Zhanhong Cen; Jun Xu; Yansong Liu; Wei Li; Ling Xu; Zhongyuan Ma; Xinfan Huang; Kunji Chen

Appl. Phys. Lett. 89, 163107 (2006) https://doi.org/10.1063/1.2362577

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Noncontact tuning fork position sensing for hollow-pyramid near-field cantilevered probes

A. Ambrosio; E. Cefalì; S. Spadaro; S. Patanè; M. Allegrini; D. Albert; E. Oesterschulze

Appl. Phys. Lett. 89, 163108 (2006) https://doi.org/10.1063/1.2362588

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Instabilities of switching processes in synthetic antiferromagnets

A. N. Bogdanov; U. K. Rößler

Appl. Phys. Lett. 89, 163109 (2006) https://doi.org/10.1063/1.2363177

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Ordered arrays of Ag nanoparticles grown by constrained self-organization

Pradeep Sharma; C. Y. Liu; Chen-Feng Hsu; N. W. Liu; Y. L. Wang

Appl. Phys. Lett. 89, 163110 (2006) https://doi.org/10.1063/1.2355475

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High-conductance states of single benzenedithiol molecules

Makusu Tsutsui; Yumi Teramae; Shu Kurokawa; Akira Sakai

Appl. Phys. Lett. 89, 163111 (2006) https://doi.org/10.1063/1.2363995

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Multiple reference Fourier transform holography with soft x rays

W. F. Schlotter; R. Rick; K. Chen; A. Scherz; J. Stöhr; J. Lüning; S. Eisebitt; Ch. Günther; W. Eberhardt; O. Hellwig; I. McNulty

Appl. Phys. Lett. 89, 163112 (2006) https://doi.org/10.1063/1.2364259

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Fabrication of sub- $50 nm$ $(La, Ba) Mn O_{3}$ ferromagnetic nanochannels by atomic force microscopy lithography and their electrical properties

Motoyuki Hirooka; Yoshihiko Yanagisawa; Teruo Kanki; Hidekazu Tanaka; Tomoji Kawai

Appl. Phys. Lett. 89, 163113 (2006) https://doi.org/10.1063/1.2360208

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Controlled two-dimensional coated nanostructures for bulk thermoelectric composites

B. Zhang; J. He; X. Ji; Terry M. Tritt; Amar Kumbhar

Appl. Phys. Lett. 89, 163114 (2006) https://doi.org/10.1063/1.2363954

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Internanotube friction

Sen-Hong Syue; Sheng-Yi Lu; Wen-Kuang Hsu; Han-Chang Shih

Appl. Phys. Lett. 89, 163115 (2006) https://doi.org/10.1063/1.2369721

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Enhanced low-temperature protonic conductivity in fully dense nanometric cubic zirconia

Umberto Anselmi-Tamburini; Filippo Maglia; Gaetano Chiodelli; Pietro Riello; Stefania Bucella; Zuhair A. Munir

Appl. Phys. Lett. 89, 163116 (2006) https://doi.org/10.1063/1.2360934

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Nanopatterning of multiferroic $Bi Fe O_{3}$ using “soft” electron beam lithography

Tao Sun; Zixiao Pan; Vinayak P. Dravid; Zhaoyu Wang; Min-Feng Yu; Jin Wang

Appl. Phys. Lett. 89, 163117 (2006) https://doi.org/10.1063/1.2364117

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Size-dependent modifications of the Raman spectrum of rutile $Ti O_{2}$

Varghese Swamy; Barry C. Muddle; Qing Dai

Appl. Phys. Lett. 89, 163118 (2006) https://doi.org/10.1063/1.2364123

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Magnetic field sensing scheme using $Co Fe B ∕ Mg O ∕ Co Fe B$ tunneling junction with superparamagnetic CoFeB layer

Youngman Jang; Chunghee Nam; J. Y. Kim; B. K. Cho; Y. J. Cho; T. W. Kim

Appl. Phys. Lett. 89, 163119 (2006) https://doi.org/10.1063/1.2370876

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Contact transfer of aligned carbon nanotube arrays onto conducting substrates

Ashavani Kumar; Victor L. Pushparaj; Swastik Kar; Omkaram Nalamasu; Pulickel M. Ajayan; Rajashree Baskaran

Appl. Phys. Lett. 89, 163120 (2006) https://doi.org/10.1063/1.2356899

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Transport in carbon nanotube $p - i - n$ diodes

Ken Bosnick; Nathan Gabor; Paul McEuen

Appl. Phys. Lett. 89, 163121 (2006) https://doi.org/10.1063/1.2360895

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Surface polarization enhancement in $({Pb}_{0.25} {Ba}_{0.15} {Sr}_{0.6}) Ti O_{3}$ nanotubes

Wei Liu; Xiaohua Sun; Hongwei Han; Meiya Li; Xing-Zhong Zhao

Appl. Phys. Lett. 89, 163122 (2006) https://doi.org/10.1063/1.2364454

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High-performance, hysteresis-free carbon nanotube field-effect transistors via directed assembly

Stephen A. McGill; Saleem G. Rao; Pradeep Manandhar; Peng Xiong; Seunghun Hong

Appl. Phys. Lett. 89, 163123 (2006) https://doi.org/10.1063/1.2364461

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Origin of high oscillator strength in green-emitting $In Ga N ∕ Ga N$ nanocolumns

Y. Kawakami; S. Suzuki; A. Kaneta; M. Funato; A. Kikuchi; K. Kishino

Appl. Phys. Lett. 89, 163124 (2006) https://doi.org/10.1063/1.2363958

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In situ studies of semiconductor nanowire growth using optical reflectometry

T. Clement; S. Ingole; S. Ketharanathan; Jeff Drucker; S. T. Picraux

Appl. Phys. Lett. 89, 163125 (2006) https://doi.org/10.1063/1.2364121

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Localization of electrons in multiple layers of self-assembled $Ge Si ∕ Si$ islands

A. I. Yakimov; A. I. Nikiforov; A. V. Dvurechenskii

Appl. Phys. Lett. 89, 163126 (2006) https://doi.org/10.1063/1.2358962

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Luminescence properties of wurtzite AlN nanotips

Shih-Chen Shi; Chia Fu Chen; Surojit Chattopadhyay; Kuei-Hsien Chen; Bo-Wen Ke; Li-Chyong Chen; Laima Trinkler; Baiba Berzina

Appl. Phys. Lett. 89, 163127 (2006) https://doi.org/10.1063/1.2364158

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Controlled selective growth of ZnO nanorod and microrod arrays on Si substrates by a wet chemical method

Yong-Jin Kim; Chul-Ho Lee; Young Joon Hong; Gyu-Chul Yi; Sung Soo Kim; Hyeonsik Cheong

Appl. Phys. Lett. 89, 163128 (2006) https://doi.org/10.1063/1.2364162

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DEVICE PHYSICS

On the function of a bathocuproine buffer layer in organic photovoltaic cells

M. Vogel; S. Doka; Ch. Breyer; M. Ch. Lux-Steiner; K. Fostiropoulos

Appl. Phys. Lett. 89, 163501 (2006) https://doi.org/10.1063/1.2362624

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Production of a microbeam of slow highly charged ions with a tapered glass capillary

Tokihiro Ikeda; Yasuyuki Kanai; Takao M. Kojima; Yoshio Iwai; Tadashi Kambara; Yasunori Yamazaki; Masamitsu Hoshino; Takuya Nebiki; Tadashi Narusawa

Appl. Phys. Lett. 89, 163502 (2006) https://doi.org/10.1063/1.2362642

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Separate domain formation in ${Ge}_{2} {Sb}_{2} {Te}_{5} - Si O_{x}$ mixed layer

Tae-Yon Lee; Sung-Soo Yim; Dongbok Lee; Min-Hyun Lee; Dong-Ho Ahn; Ki-Bum Kim

Appl. Phys. Lett. 89, 163503 (2006) https://doi.org/10.1063/1.2362981

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Silicon light-emitting transistor for on-chip optical interconnection

Shin-ichi Saito; Digh Hisamoto; Haruka Shimizu; Hirotaka Hamamura; Ryuta Tsuchiya; Yuichi Matsui; Toshiyuki Mine; Tadashi Arai; Nobuyuki Sugii; Kazuyoshi Torii; Shin’ichiro Kimura; Takahiro Onai

Appl. Phys. Lett. 89, 163504 (2006) https://doi.org/10.1063/1.2360783

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Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors

J. H. Seo; D. S. Park; S. W. Cho; C. Y. Kim; W. C. Jang; C. N. Whang; K.-H. Yoo; G. S. Chang; T. Pedersen; A. Moewes; K. H. Chae; S. J. Cho

Appl. Phys. Lett. 89, 163505 (2006) https://doi.org/10.1063/1.2363940

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Nonconductive polymer microresonators actuated by the Kelvin polarization force

Silvan Schmid; Michael Wendlandt; David Junker; Christofer Hierold

Appl. Phys. Lett. 89, 163506 (2006) https://doi.org/10.1063/1.2362590

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Quantitative analysis of ferroelectric domain imaging with piezoresponse force microscopy

Tobias Jungk; Ákos Hoffmann; Elisabeth Soergel

Appl. Phys. Lett. 89, 163507 (2006) https://doi.org/10.1063/1.2362984

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Effective suppression of Fermi level pinning in polycrystalline-silicon/high- $k$ gate stack by using polycrystalline-silicon-germanium gate electrode

Xiongfei Yu; Chunxiang Zhu; Mingbin Yu

Appl. Phys. Lett. 89, 163508 (2006) https://doi.org/10.1063/1.2363144

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Superconducting memory based on ferromagnetism

R. Held; J. Xu; A. Schmehl; C. W. Schneider; J. Mannhart; M. R. Beasley

Appl. Phys. Lett. 89, 163509 (2006) https://doi.org/10.1063/1.2362870

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Formation and characterization of silicon/carbon nanotube/silicon heterojunctions by local synthesis and assembly

Takeshi Kawano; Dane Christensen; Supin Chen; Chung Yeung Cho; Liwei Lin

Appl. Phys. Lett. 89, 163510 (2006) https://doi.org/10.1063/1.2364151

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Recombination zone in mixed-host organic light-emitting devices

Chih-Hung Hsiao; Yan-Hau Chen; Tien-Chun Lin; Chia-Chiang Hsiao; Jiun-Haw Lee

Appl. Phys. Lett. 89, 163511 (2006) https://doi.org/10.1063/1.2361266

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High-mobility transistors based on nanoassembled carbon nanotube semiconducting layer and $Si O_{2}$ nanoparticle dielectric layer

Wei Xue; Yi Liu; Tianhong Cui

Appl. Phys. Lett. 89, 163512 (2006) https://doi.org/10.1063/1.2361278

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Lateral reduction of random percolative networks formed by nanocrystals: Possibilities for a new concept electronic device?

Giovanni Pennelli

Appl. Phys. Lett. 89, 163513 (2006) https://doi.org/10.1063/1.2361282

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Extraction of nitride trap density from stress induced leakage current in silicon-oxide-nitride-oxide-silicon flash memory

Shaw-Hung Gu; Tahui Wang; Wen-Pin Lu; Yen-Hui Joseph Ku; Chih-Yuan Lu

Appl. Phys. Lett. 89, 163514 (2006) https://doi.org/10.1063/1.2360180

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Application of metal-doped organic layer both as exciton blocker and optical spacer for organic photovoltaic devices

M. Y. Chan; S. L. Lai; K. M. Lau; C. S. Lee; S. T. Lee

Appl. Phys. Lett. 89, 163515 (2006) https://doi.org/10.1063/1.2362974

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Air-stable $n$ -channel copper hexachlorophthalocyanine for field-effect transistors

Mang-Mang Ling; Zhenan Bao; Peter Erk

Appl. Phys. Lett. 89, 163516 (2006) https://doi.org/10.1063/1.2362976

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InGaAs metal-oxide-semiconductor capacitors with $Hf O_{2}$ gate dielectric grown by atomic-layer deposition

N. Goel; P. Majhi; C. O. Chui; W. Tsai; D. Choi; J. S. Harris

Appl. Phys. Lett. 89, 163517 (2006) https://doi.org/10.1063/1.2363959

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Physics of ultrathin photovoltaics

V. G. Karpov; M. L. C. Cooray; Diana Shvydka

Appl. Phys. Lett. 89, 163518 (2006) https://doi.org/10.1063/1.2364136

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APPLIED BIOPHYSICS

Label-free DNA sequence detection using oligonucleotide functionalized optical fiber

Xingwei Wang; Kristie L. Cooper; Anbo Wang; Juncheng Xu; Zhuang Wang; Yan Zhang; Zhijian Tu

Appl. Phys. Lett. 89, 163901 (2006) https://doi.org/10.1063/1.2364459

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Dielectrophoretic force and torque on a sphere in an arbitrary time varying electric field

C. Y. Yang; U. Lei

Appl. Phys. Lett. 89, 163902 (2006) https://doi.org/10.1063/1.2364468

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Discrimination of microbiological samples using femtosecond laser-induced breakdown spectroscopy

Matthieu Baudelet; Jin Yu; Myriam Bossu; Julien Jovelet; Jean-Pierre Wolf; Tanguy Amodeo; Emeric Fréjafon; Patrick Laloi

Appl. Phys. Lett. 89, 163903 (2006) https://doi.org/10.1063/1.2361270

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INTERDISCIPLINARY AND GENERAL PHYSICS

Microhand for biological applications

Yen-Wen Lu; Chang-Jin(CJ) Kim

Appl. Phys. Lett. 89, 164101 (2006) https://doi.org/10.1063/1.2362602

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Feedback control and characterization of a microcantilever using optical radiation pressure

David M. Weld; Aharon Kapitulnik

Appl. Phys. Lett. 89, 164102 (2006) https://doi.org/10.1063/1.2362598

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Combined electron and focused ion beam system for improvement of secondary ion yield in secondary ion mass spectrometry instrument

L. Ji; Q. Ji; K.-N. Leung; R. A. Gough

Appl. Phys. Lett. 89, 164103 (2006) https://doi.org/10.1063/1.2362996

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Flory-Huggins swelling of polymer Bragg mirrors

Wolfgang Mönch; Jan Dehnert; Ewald Jaufmann; Hans Zappe

Appl. Phys. Lett. 89, 164104 (2006) https://doi.org/10.1063/1.2358811

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Microfluidic circuits with tunable flow resistances

Eric W. Lam; Gregory A. Cooksey; Bruce A. Finlayson; Albert Folch

Appl. Phys. Lett. 89, 164105 (2006) https://doi.org/10.1063/1.2363931

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Second inflection point of water surface tension

Y. J. Lü; B. Wei

Appl. Phys. Lett. 89, 164106 (2006) https://doi.org/10.1063/1.2364167

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Enhancement of quantum well intermixing on $In P ∕ In Ga As ∕ In Ga As P$ heterostructures using titanium oxide surface stressors to induce forced point defect diffusion

A. François; V. Aimez; J. Beauvais; M. Gendry; P. Regreny

Appl. Phys. Lett. 89, 164107 (2006) https://doi.org/10.1063/1.2364058

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Effects of interfacial organic layers on thin film nucleation in atomic layer deposition

Abhishek Dube; Manish Sharma; Paul F. Ma; J. R. Engstrom

Appl. Phys. Lett. 89, 164108 (2006) https://doi.org/10.1063/1.2360902

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ERRATA

Erratum: “Green fluorescent organic light-emitting device with external quantum efficiency of nearly 10%” [Appl. Phys. Lett. 89, 063504 (2006)]

Kenji Okumoto; Hiroshi Kanno; Yuji Hamada; Hisakazu Takahashi; Kenichi Shibata

Appl. Phys. Lett. 89, 169901 (2006) https://doi.org/10.1063/1.2359696

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Erratum: “Annealing-time dependence in interfacial reaction between poly-Si electrode and ${HfO}_{2} ∕ Si$ gate stack studied by synchrotron radiation photoemission and x-ray absorption spectroscopy” [Appl. Phys. Lett. 89, 012102 (2006)]

H. Takahashi; J. Okabayashi; S. Toyoda; H. Kumigashira; M. Oshima; K. Ikeda; G. L. Liu; Z. Liu; K. Usuda

Appl. Phys. Lett. 89, 169902 (2006) https://doi.org/10.1063/1.2364452

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