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LASERS, OPTICS, AND OPTOELECTRONICS

Investigation of transition dynamics in a quantum-dot laser optically pumped by femtosecond pulses

E. U. Rafailov; A. D. McRobbie; M. A. Cataluna; L. O’Faolain; W. Sibbett; D. A. Livshits

Appl. Phys. Lett. 88, 041101 (2006) https://doi.org/10.1063/1.2166207

Abstract

View articletitled, Investigation of transition dynamics in a quantum-dot laser optically pumped by femtosecond pulses

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Pulsed- and continuous-mode operation at high temperature of strained quantum-cascade lasers grown by metalorganic vapor phase epitaxy

L. Diehl; D. Bour; S. Corzine; J. Zhu; G. Höfler; B. G. Lee; C. Y. Wang; M. Troccoli; F. Capasso

Appl. Phys. Lett. 88, 041102 (2006) https://doi.org/10.1063/1.2166206

Abstract

View articletitled, Pulsed- and continuous-mode operation at high temperature of strained quantum-cascade lasers grown by metalorganic vapor phase epitaxy

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Passive intracavity coherent addition of nine laser distributions

Liran Shimshi; Amiel A. Ishaaya; Vardit Ekhouse; Nir Davidson; Asher A. Friesem

Appl. Phys. Lett. 88, 041103 (2006) https://doi.org/10.1063/1.2167392

Abstract

View articletitled, Passive intracavity coherent addition of nine laser distributions

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Optically switchable twist nematic grating based on a dye-doped liquid crystal film

San-Yi Huang; Shing-Trong Wu; Andy Ying-Guey Fuh

Appl. Phys. Lett. 88, 041104 (2006) https://doi.org/10.1063/1.2167393

Abstract

View articletitled, Optically switchable twist nematic grating based on a dye-doped liquid crystal film

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Room temperature operation of epitaxial lead-telluride detectors monolithically integrated on midinfrared filters

M. Böberl; T. Fromherz; J. Roither; G. Pillwein; G. Springholz; W. Heiss

Appl. Phys. Lett. 88, 041105 (2006) https://doi.org/10.1063/1.2167396

Abstract

View articletitled, Room temperature operation of epitaxial lead-telluride detectors monolithically integrated on midinfrared filters

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Gain amplification and lasing properties of individual organic nanofibers

F. Quochi; F. Cordella; A. Mura; G. Bongiovanni; F. Balzer; H.-G. Rubahn

Appl. Phys. Lett. 88, 041106 (2006) https://doi.org/10.1063/1.2167397

Abstract

View articletitled, Gain amplification and lasing properties of individual organic nanofibers

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Engineering clusters for table-top acceleration of ions

J. Jha; D. Mathur; M. Krishnamurthy

Appl. Phys. Lett. 88, 041107 (2006) https://doi.org/10.1063/1.2164414

Abstract

View articletitled, Engineering clusters for table-top acceleration of ions

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Pi-cell liquid crystal displays at arbitrary pretilt angles

Fion S. Yeung; Y. W. Li; Hoi-Sing Kwok

Appl. Phys. Lett. 88, 041108 (2006) https://doi.org/10.1063/1.2165284

Abstract

View articletitled, Pi-cell liquid crystal displays at arbitrary pretilt angles

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Electric-field-coupled resonators for negative permittivity metamaterials

D. Schurig; J. J. Mock; D. R. Smith

Appl. Phys. Lett. 88, 041109 (2006) https://doi.org/10.1063/1.2166681

Abstract

View articletitled, Electric-field-coupled resonators for negative permittivity metamaterials

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Highly efficient stimulated Raman scattering of picosecond pulses in $K Ti O P O_{4}$

Valdas Pasiskevicius; Carlota Canalias; Fredrik Laurell

Appl. Phys. Lett. 88, 041110 (2006) https://doi.org/10.1063/1.2166683

Abstract

View articletitled, Highly efficient stimulated Raman scattering of picosecond pulses in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">K</mi><mi mathvariant="normal">Ti</mi><mi mathvariant="normal">O</mi><mi mathvariant="normal">P</mi><msub><mi mathvariant="normal">O</mi><mn>4</mn></msub></mrow></math>

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Room-temperature continuous-wave operation of quantum-cascade lasers at $λ \sim 4 μ m$

J. S. Yu; S. R. Darvish; A. Evans; J. Nguyen; S. Slivken; M. Razeghi

Appl. Phys. Lett. 88, 041111 (2006) https://doi.org/10.1063/1.2167394

Abstract

View articletitled, Room-temperature continuous-wave operation of quantum-cascade lasers at <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>λ</mi><mo>∼</mo><mn>4</mn><mspace width="0.3em"></mspace><mi>μ</mi><mi mathvariant="normal">m</mi></mrow></math>

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Ultrahigh- $Q$ photonic crystal nanocavities realized by the local width modulation of a line defect

Eiichi Kuramochi; Masaya Notomi; Satoshi Mitsugi; Akihiko Shinya; Takasumi Tanabe; Toshifumi Watanabe

Appl. Phys. Lett. 88, 041112 (2006) https://doi.org/10.1063/1.2167801

Abstract

View articletitled, Ultrahigh-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">Q</mi></math> photonic crystal nanocavities realized by the local width modulation of a line defect

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Nanoepitaxy of $In As ∕ In P$ quantum dots by metalorganic vapor phase epitaxy for $1.55 μ m$ emitters

J. M. Benoit; L. Le Gratiet; G. Beaudoin; A. Michon; G. Saint-Girons; R. Kuszelewicz; I. Sagnes

Appl. Phys. Lett. 88, 041113 (2006) https://doi.org/10.1063/1.2167804

Abstract

View articletitled, Nanoepitaxy of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">In</mi><mi mathvariant="normal">As</mi><mo>∕</mo><mi mathvariant="normal">In</mi><mi mathvariant="normal">P</mi></mrow></math> quantum dots by metalorganic vapor phase epitaxy for <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>1.55</mn><mspace width="0.3em"></mspace><mi>μ</mi><mi mathvariant="normal">m</mi></mrow></math> emitters

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Reflection-type pulsed terahertz imaging with a phase-retrieval algorithm

Y. Ino; J. B. Héroux; T. Mukaiyama; M. Kuwata-Gonokami

Appl. Phys. Lett. 88, 041114 (2006) https://doi.org/10.1063/1.2167805

Abstract

View articletitled, Reflection-type pulsed terahertz imaging with a phase-retrieval algorithm

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Third-order nonlinearity contribution to electro-optic activity in polymer materials in a constant bias field

Nishant Prakash Bhatambrekar; Larry Dalton; Jingdong Luo; Alex K.-Y. Jen; Antao Chen

Appl. Phys. Lett. 88, 041115 (2006) https://doi.org/10.1063/1.2166198

Abstract

View articletitled, Third-order nonlinearity contribution to electro-optic activity in polymer materials in a constant bias field

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Laser pulse transmission through the water breakdown plasma in laser shock peening

Benxin Wu; Yung C. Shin

Appl. Phys. Lett. 88, 041116 (2006) https://doi.org/10.1063/1.2168022

Abstract

View articletitled, Laser pulse transmission through the water breakdown plasma in laser shock peening

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Femtosecond time-resolved optical pump-probe spectroscopy at kilohertz-scan-rates over nanosecond-time-delays without mechanical delay line

A. Bartels; F. Hudert; C. Janke; T. Dekorsy; K. Köhler

Appl. Phys. Lett. 88, 041117 (2006) https://doi.org/10.1063/1.2167812

Abstract

View articletitled, Femtosecond time-resolved optical pump-probe spectroscopy at kilohertz-scan-rates over nanosecond-time-delays without mechanical delay line

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Traveling-wave photomixer with recessed interdigitated contacts on low-temperature-grown GaAs

M. Mikulics; E. A. Michael; R. Schieder; J. Stutzki; R. Güsten; M. Marso; A. van der Hart; H. P. Bochem; H. Lüth; P. Kordoš

Appl. Phys. Lett. 88, 041118 (2006) https://doi.org/10.1063/1.2168250

Abstract

View articletitled, Traveling-wave photomixer with recessed interdigitated contacts on low-temperature-grown GaAs

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Buffer-material dependence of InAs quantum dots on GaAs substrate

Hitoshi Shimizu; Shanmugam Saravanan

Appl. Phys. Lett. 88, 041119 (2006) https://doi.org/10.1063/1.2168262

Abstract

View articletitled, Buffer-material dependence of InAs quantum dots on GaAs substrate

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Fluidic lenses with variable focal length

Peter M. Moran; Saman Dharmatilleke; Aik Hau Khaw; Kok Wei Tan; Mei Lin Chan; Isabel Rodriguez

Appl. Phys. Lett. 88, 041120 (2006) https://doi.org/10.1063/1.2168245

Abstract

View articletitled, Fluidic lenses with variable focal length

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Anisotropy of domain broadening in periodically poled lithium niobate crystals

Yan Sheng; Ting Wang; Boqin Ma; E Qu; Bingying Cheng; Daozhong Zhang

Appl. Phys. Lett. 88, 041121 (2006) https://doi.org/10.1063/1.2168727

Abstract

View articletitled, Anisotropy of domain broadening in periodically poled lithium niobate crystals

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High performance optically pumped antimonide lasers operating in the $2.4 – 9.3 μ m$ wavelength range

R. Kaspi; A. P. Ongstad; G. C. Dente; J. R. Chavez; M. L. Tilton; D. M. Gianardi

Appl. Phys. Lett. 88, 041122 (2006) https://doi.org/10.1063/1.2170423

Abstract

View articletitled, High performance optically pumped antimonide lasers operating in the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>2.4</mn><mtext>–</mtext><mn>9.3</mn><mspace width="0.3em"></mspace><mi>μ</mi><mi mathvariant="normal">m</mi></mrow></math> wavelength range

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Single-shot, interferometric, high-resolution, terahertz field diagnostic

K. Y. Kim; B. Yellampalle; G. Rodriguez; R. D. Averitt; A. J. Taylor; J. H. Glownia

Appl. Phys. Lett. 88, 041123 (2006) https://doi.org/10.1063/1.2168897

Abstract

View articletitled, Single-shot, interferometric, high-resolution, terahertz field diagnostic

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Morphological and compositional changes in the $Si O_{2} ∕ Si C$ interface region induced by oxide thermal growth

G. V. Soares; C. Radtke; I. J. R. Baumvol; F. C. Stedile

Appl. Phys. Lett. 88, 041901 (2006) https://doi.org/10.1063/1.2167608

Abstract

View articletitled, Morphological and compositional changes in the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub><mo>∕</mo><mi mathvariant="normal">Si</mi><mi mathvariant="normal">C</mi></mrow></math> interface region induced by oxide thermal growth

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Flow-rate modulation epitaxy of wurtzite AlBN

Tetsuya Akasaka; Toshiki Makimoto

Appl. Phys. Lett. 88, 041902 (2006) https://doi.org/10.1063/1.2164900

Abstract

View articletitled, Flow-rate modulation epitaxy of wurtzite AlBN

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Band gap renormalization and carrier localization effects in $InGaN ∕ GaN$ quantum-wells light emitting diodes with Si doped barriers

Y. J. Wang; S. J. Xu; Q. Li; D. G. Zhao; H. Yang

Appl. Phys. Lett. 88, 041903 (2006) https://doi.org/10.1063/1.2168035

Abstract

View articletitled, Band gap renormalization and carrier localization effects in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>InGaN</mi><mo>∕</mo><mi>GaN</mi></mrow></math> quantum-wells light emitting diodes with Si doped barriers

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Correlation of growth stress and structural evolution during metalorganic chemical vapor deposition of GaN on (111) Si

Srinivasan Raghavan; Xiaojun Weng; Elizabeth Dickey; Joan M. Redwing

Appl. Phys. Lett. 88, 041904 (2006) https://doi.org/10.1063/1.2168020

Abstract

View articletitled, Correlation of growth stress and structural evolution during metalorganic chemical vapor deposition of GaN on (111) Si

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Enhanced low-temperature impact toughness of nanostructured Ti

V. V. Stolyarov; R. Z. Valiev; Y. T. Zhu

Appl. Phys. Lett. 88, 041905 (2006) https://doi.org/10.1063/1.2167800

Abstract

View articletitled, Enhanced low-temperature impact toughness of nanostructured Ti

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Growth of silicon bump induced by swift heavy ion at the silicon oxide-silicon interface

J. -F. Carlotti; A. D. Touboul; M. Ramonda; M. Caussanel; C. Guasch; J. Bonnet; J. Gasiot

Appl. Phys. Lett. 88, 041906 (2006) https://doi.org/10.1063/1.2166476

Abstract

View articletitled, Growth of silicon bump induced by swift heavy ion at the silicon oxide-silicon interface

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Low-temperature growth of crystalline GaN films using energetic neutral atomic-beam lithography/epitaxy

Alexander H. Mueller; Elshan A. Akhadov; Mark A. Hoffbauer

Appl. Phys. Lett. 88, 041907 (2006) https://doi.org/10.1063/1.2166485

Abstract

View articletitled, Low-temperature growth of crystalline GaN films using energetic neutral atomic-beam lithography/epitaxy

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Raman scattering in carbon-doped InAs

S. Najmi; X. Zhang; X. K. Chen; M. L. W. Thewalt; S. P. Watkins

Appl. Phys. Lett. 88, 041908 (2006) https://doi.org/10.1063/1.2168015

Abstract

View articletitled, Raman scattering in carbon-doped InAs

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Luminescence from colloidal 3C-SiC nanocrystals in different solvents

J. Y. Fan; X. L. Wu; H. X. Li; H. W. Liu; G. G. Siu; Paul K. Chu

Appl. Phys. Lett. 88, 041909 (2006) https://doi.org/10.1063/1.2168018

Abstract

View articletitled, Luminescence from colloidal 3C-SiC nanocrystals in different solvents

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Atomic force microscopy analysis of cleaved facets in III-nitride laser diodes grown on free-standing GaN substrates

T. M. Smeeton; V. Bousquet; S. E. Hooper; M. Kauer; J. Heffernan

Appl. Phys. Lett. 88, 041910 (2006) https://doi.org/10.1063/1.2167400

Abstract

View articletitled, Atomic force microscopy analysis of cleaved facets in III-nitride laser diodes grown on free-standing GaN substrates

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Evidence of surface acoustic wave band gaps in the phononic crystals created on thin plates

Xinya Zhang; Ted Jackson; Emmanuel Lafond; Pierre Deymier; Jerome Vasseur

Appl. Phys. Lett. 88, 041911 (2006) https://doi.org/10.1063/1.2167794

Abstract

View articletitled, Evidence of surface acoustic wave band gaps in the phononic crystals created on thin plates

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Thermal transport via surface phonon polaritons across a two-dimensional pore

James S. Hammonds, Jr.

Appl. Phys. Lett. 88, 041912 (2006) https://doi.org/10.1063/1.2167802

Abstract

View articletitled, Thermal transport via surface phonon polaritons across a two-dimensional pore

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Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique

Z. Yang; R. N. Wang; S. Jia; D. Wang; B. S. Zhang; K. M. Lau; K. J. Chen

Appl. Phys. Lett. 88, 041913 (2006) https://doi.org/10.1063/1.2167813

Abstract

View articletitled, Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique

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Crystal and electronic structures of ${LiNH}_{2}$

J. B. Yang; X. D. Zhou; Q. Cai; W. J. James; W. B. Yelon

Appl. Phys. Lett. 88, 041914 (2006) https://doi.org/10.1063/1.2163258

Abstract

View articletitled, Crystal and electronic structures of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>LiNH</mi><mn>2</mn></msub></mrow></math>

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Low-dislocation-density strain relaxation of SiGe on a $Si Ge ∕ Si Ge C$ buffer layer

L. H. Wong; J. P. Liu; C. Ferraris; C. C. Wong; M. C. Jonatan; T. J. White; L. Chan

Appl. Phys. Lett. 88, 041915 (2006) https://doi.org/10.1063/1.2165283

Abstract

View articletitled, Low-dislocation-density strain relaxation of SiGe on a <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><mi mathvariant="normal">Ge</mi><mo>∕</mo><mi mathvariant="normal">Si</mi><mi mathvariant="normal">Ge</mi><mi mathvariant="normal">C</mi></mrow></math> buffer layer

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Influence of the surrounding host in obtaining tunable and strong visible photoluminescence from silicon nanoparticles

G. Santana; B. M. Monroy; A. Ortiz; L. Huerta; J. C. Alonso; J. Fandiño; J. Aguilar-Hernández; E. Hoyos; F. Cruz-Gandarilla; G. Contreras-Puentes

Appl. Phys. Lett. 88, 041916 (2006) https://doi.org/10.1063/1.2164919

Abstract

View articletitled, Influence of the surrounding host in obtaining tunable and strong visible photoluminescence from silicon nanoparticles

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Long-lived, coherent acoustic phonon oscillations in GaN single crystals

S. Wu; P. Geiser; J. Jun; J. Karpinski; J.-R. Park; Roman Sobolewski

Appl. Phys. Lett. 88, 041917 (2006) https://doi.org/10.1063/1.2168246

Abstract

View articletitled, Long-lived, coherent acoustic phonon oscillations in GaN single crystals

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Interaction of $Hf O_{2} ∕ Si O_{2} ∕ Si$ structures with deuterium gas

C. Driemeier; L. Miotti; I. J. R. Baumvol; C. Radtke; E. P. Gusev; M. J. Kim; R. M. Wallace

Appl. Phys. Lett. 88, 041918 (2006) https://doi.org/10.1063/1.2168501

Abstract

View articletitled, Interaction of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>Hf</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub><mo>∕</mo><mi>Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub><mo>∕</mo><mi>Si</mi></mrow></math> structures with deuterium gas

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Atomic-resolution observations of semicrystalline intergranular thin films in silicon nitride

A. Ziegler; J. C. Idrobo; M. K. Cinibulk; C. Kisielowski; N. D. Browning; R. O. Ritchie

Appl. Phys. Lett. 88, 041919 (2006) https://doi.org/10.1063/1.2168021

Abstract

View articletitled, Atomic-resolution observations of semicrystalline intergranular thin films in silicon nitride

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Ultrasonic anomalies in ${La}_{1 ∕ 3} {Sr}_{2 ∕ 3} M O_{3}$ (⁠ $M = Fe$ ⁠, Mn)

Hui Kong; Changfei Zhu

Appl. Phys. Lett. 88, 041920 (2006) https://doi.org/10.1063/1.2168917

Abstract

View articletitled, Ultrasonic anomalies in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>La</mi><mrow><mn>1</mn><mo>∕</mo><mn>3</mn></mrow></msub><msub><mi>Sr</mi><mrow><mn>2</mn><mo>∕</mo><mn>3</mn></mrow></msub><mi>M</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> (⁠<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>M</mi><mo>=</mo><mi>Fe</mi></mrow></math>⁠, Mn)

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Effect of viscous loss on mechanical resonators designed for mass detection

Joseph F. Vignola; John A. Judge; Jacek Jarzynski; Maxim Zalalutdinov; Brian H. Houston; Jeffrey W. Baldwin

Appl. Phys. Lett. 88, 041921 (2006) https://doi.org/10.1063/1.2165186

Abstract

View articletitled, Effect of viscous loss on mechanical resonators designed for mass detection

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Anisotropy effect on heteroepitaxial growth of self-assembled islands

P. Liu; Y. W. Zhang; C. Lu

Appl. Phys. Lett. 88, 041922 (2006) https://doi.org/10.1063/1.2167815

Abstract

View articletitled, Anisotropy effect on heteroepitaxial growth of self-assembled islands

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Enhancement of photoluminescence from Yb and Er co-doped ${Al}_{2} O_{3}$ films by an asymmetric metal cavity

Nobuto Managaki; Minoru Fujii; Toshihiro Nakamura; Yoshiko Usui; Shinji Hayashi

Appl. Phys. Lett. 88, 042101 (2006) https://doi.org/10.1063/1.2166685

Abstract

View articletitled, Enhancement of photoluminescence from Yb and Er co-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Al</mi><mn>2</mn></msub><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> films by an asymmetric metal cavity

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Effect of Gd implantation on the structural and magnetic properties of GaN and AlN

Sang Youn Han; J. Hite; G. T. Thaler; R. M. Frazier; C. R. Abernathy; S. J. Pearton; H. K. Choi; W. O. Lee; Y. D. Park; J. M. Zavada; R. Gwilliam

Appl. Phys. Lett. 88, 042102 (2006) https://doi.org/10.1063/1.2167790

Abstract

View articletitled, Effect of Gd implantation on the structural and magnetic properties of GaN and AlN

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Electron mobility in graded AlGaN alloys

Siddharth Rajan; Steven P. DenBaars; Umesh K. Mishra; Huili (Grace) Xing; Debdeep Jena

Appl. Phys. Lett. 88, 042103 (2006) https://doi.org/10.1063/1.2165190

Abstract

View articletitled, Electron mobility in graded AlGaN alloys

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Ab initio calculation of hydrostatic absolute deformation potential of semiconductors

Yong-Hua Li; X. G. Gong; Su-Huai Wei

Appl. Phys. Lett. 88, 042104 (2006) https://doi.org/10.1063/1.2168254

Abstract

View articletitled, Ab initio calculation of hydrostatic absolute deformation potential of semiconductors

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Conduction-band electron effective mass in ${Zn}_{0.87} {Mn}_{0.13} Se$ measured by terahertz and far-infrared magnetooptic ellipsometry

T. Hofmann; U. Schade; K. C. Agarwal; B. Daniel; C. Klingshirn; M. Hetterich; C. M. Herzinger; M. Schubert

Appl. Phys. Lett. 88, 042105 (2006) https://doi.org/10.1063/1.2168258

Abstract

View articletitled, Conduction-band electron effective mass in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>Zn</mi><mn>0.87</mn></msub><msub><mi>Mn</mi><mn>0.13</mn></msub><mi>Se</mi></mrow></math> measured by terahertz and far-infrared magnetooptic ellipsometry

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Effect of substitutions on the thermoelectric figure of merit of half-Heusler phases at 800 °C

Slade R. Culp; S. Joseph Poon; Nicoleta Hickman; Terry M. Tritt; J. Blumm

Appl. Phys. Lett. 88, 042106 (2006) https://doi.org/10.1063/1.2168019

Abstract

View articletitled, Effect of substitutions on the thermoelectric figure of merit of half-Heusler phases at 800 °C

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Ultralow threshold field emission from a single multipod structure of ZnO

Niranjan S. Ramgir; Imtiaz S. Mulla; K. Vijayamohanan; Dattatray J. Late; Ashok B. Bhise; Mahendra A. More; Dilip S. Joag

Appl. Phys. Lett. 88, 042107 (2006) https://doi.org/10.1063/1.2165273

Abstract

View articletitled, Ultralow threshold field emission from a single multipod structure of ZnO

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Measurement of the valence-band offset at the epitaxial MgO-GaAs(001) heterojunction by x-ray photoelectron spectroscopy

Y. Lu; J. C. Le Breton; P. Turban; B. Lépine; P. Schieffer; G. Jézéquel

Appl. Phys. Lett. 88, 042108 (2006) https://doi.org/10.1063/1.2167847

Abstract

View articletitled, Measurement of the valence-band offset at the epitaxial MgO-GaAs(001) heterojunction by x-ray photoelectron spectroscopy

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Carrier transport and confinement in polarization-induced three-dimensional electron slabs: Importance of alloy scattering in AlGaN

John Simon; Albert (Kejia) Wang; Huili Xing; Siddharth Rajan; Debdeep Jena

Appl. Phys. Lett. 88, 042109 (2006) https://doi.org/10.1063/1.2168253

Abstract

View articletitled, Carrier transport and confinement in polarization-induced three-dimensional electron slabs: Importance of alloy scattering in AlGaN

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High carrier mobility on hydrogen terminated $⟨ 100 ⟩$ diamond surfaces

B. Rezek; H. Watanabe; C. E. Nebel

Appl. Phys. Lett. 88, 042110 (2006) https://doi.org/10.1063/1.2168497

Abstract

View articletitled, High carrier mobility on hydrogen terminated <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mo>⟨</mo><mn>100</mn><mo>⟩</mo></mrow></math> diamond surfaces

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Enhanced hole transport from Au to Zn-phthalocyanine by an insertion of a thin $n$ -type layer

Makoto Nonomura; Ichiro Hiromitsu; Senku Tanaka

Appl. Phys. Lett. 88, 042111 (2006) https://doi.org/10.1063/1.2168500

Abstract

View articletitled, Enhanced hole transport from Au to Zn-phthalocyanine by an insertion of a thin <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math>-type layer

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Determination of trap polarity in conjugated electroluminescent polymer by photoexcitation thermally stimulated current method

Hao-En Tseng; Ching-Yang Liu; Show-An Chen

Appl. Phys. Lett. 88, 042112 (2006) https://doi.org/10.1063/1.2168042

Abstract

View articletitled, Determination of trap polarity in conjugated electroluminescent polymer by photoexcitation thermally stimulated current method

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Determination of $Mg O ∕ Ga N$ heterojunction band offsets by x-ray photoelectron spectroscopy

J.-J. Chen; B. P. Gila; M. Hlad; A. Gerger; F. Ren; C. R. Abernathy; S. J. Pearton

Appl. Phys. Lett. 88, 042113 (2006) https://doi.org/10.1063/1.2170140

Abstract

View articletitled, Determination of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Mg</mi><mi mathvariant="normal">O</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi></mrow></math> heterojunction band offsets by x-ray photoelectron spectroscopy

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MAGNETISM AND SUPERCONDUCTIVITY

Magnetic coding in systems of nanomagnetic particles

S. Chakraverty; B. Ghosh; S. Kumar; A. Frydman

Appl. Phys. Lett. 88, 042501 (2006) https://doi.org/10.1063/1.2166203

Abstract

View articletitled, Magnetic coding in systems of nanomagnetic particles

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Controlling magnetic vortices through exchange bias

J. Sort; G. Salazar-Alvarez; M. D. Baró; B. Dieny; A. Hoffmann; V. Novosad; J. Nogués

Appl. Phys. Lett. 88, 042502 (2006) https://doi.org/10.1063/1.2165290

Abstract

View articletitled, Controlling magnetic vortices through exchange bias

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$10 V$ programmable Josephson voltage standard circuits using $Nb N ∕ Ti N_{x} ∕ Nb N ∕ Ti N_{x} ∕ Nb N$ double-junction stacks

H. Yamamori; M. Ishizaki; A. Shoji; P. D. Dresselhaus; S. P. Benz

Appl. Phys. Lett. 88, 042503 (2006) https://doi.org/10.1063/1.2167789

Abstract

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Mechanism of the anomalous temperature dependence of coercivity in $Sm {(Co, Fe, Cu, Zr)}_{z}$ high-temperature magnets

Chuan-bing Rong; Hong-wei Zhang; Bao-gen Shen; J. Ping Liu

Appl. Phys. Lett. 88, 042504 (2006) https://doi.org/10.1063/1.2167795

Abstract

View articletitled, Mechanism of the anomalous temperature dependence of coercivity in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Sm</mi><msub><mrow><mo>(</mo><mi mathvariant="normal">Co</mi><mo>,</mo><mi mathvariant="normal">Fe</mi><mo>,</mo><mi mathvariant="normal">Cu</mi><mo>,</mo><mi mathvariant="normal">Zr</mi><mo>)</mo></mrow><mi>z</mi></msub></mrow></math> high-temperature magnets

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A Finemet-type alloy as a low-cost candidate for high-temperature magnetic refrigeration

V. Franco; J. S. Blázquez; C. F. Conde; A. Conde

Appl. Phys. Lett. 88, 042505 (2006) https://doi.org/10.1063/1.2167803

Abstract

View articletitled, A Finemet-type alloy as a low-cost candidate for high-temperature magnetic refrigeration

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Strain-induced high coercivity in ${CoFe}_{2} O_{4}$ powders

B. H. Liu; J. Ding

Appl. Phys. Lett. 88, 042506 (2006) https://doi.org/10.1063/1.2161808

Abstract

View articletitled, Strain-induced high coercivity in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>CoFe</mi><mn>2</mn></msub><msub><mi mathvariant="normal">O</mi><mn>4</mn></msub></mrow></math> powders

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Magnetic relaxation studies on a single-molecule magnet by time-resolved inelastic neutron scattering

O. Waldmann; G. Carver; C. Dobe; D. Biner; A. Sieber; H. U. Güdel; H. Mutka; J. Ollivier; N. E. Chakov

Appl. Phys. Lett. 88, 042507 (2006) https://doi.org/10.1063/1.2164409

Abstract

View articletitled, Magnetic relaxation studies on a single-molecule magnet by time-resolved inelastic neutron scattering

Supplementary Material

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Large room-temperature magnetoresistance in Pd-added manganites

Xiao-Bo Yuan; Yi-Hua Liu; Cheng-Jian Wang; Liang-Mo Mei

Appl. Phys. Lett. 88, 042508 (2006) https://doi.org/10.1063/1.2166202

Abstract

View articletitled, Large room-temperature magnetoresistance in Pd-added manganites

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DIELECTRICS AND FERROELECTRICITY

Resistive switching and data reliability of epitaxial $(Ba, Sr) Ti O_{3}$ thin films

R. Oligschlaeger; R. Waser; R. Meyer; S. Karthäuser; R. Dittmann

Appl. Phys. Lett. 88, 042901 (2006) https://doi.org/10.1063/1.2162860

Abstract

View articletitled, Resistive switching and data reliability of epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mo>(</mo><mi mathvariant="normal">Ba</mi><mo>,</mo><mi mathvariant="normal">Sr</mi><mo>)</mo></mrow><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> thin films

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Localized microwave resonances in strained $Sr Ti O_{3}$ thin films

Patrick Irvin; Jeremy Levy; J. H. Haeni; Darrell G. Schlom

Appl. Phys. Lett. 88, 042902 (2006) https://doi.org/10.1063/1.2162697

Abstract

View articletitled, Localized microwave resonances in strained <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Sr</mi><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> thin films

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Influence of La doping in multiferroic properties of $Bi Fe O_{3}$ thin films

Yi-Hsien Lee; Jenn-Ming Wu; Chih-Huang Lai

Appl. Phys. Lett. 88, 042903 (2006) https://doi.org/10.1063/1.2167793

Abstract

View articletitled, Influence of La doping in multiferroic properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Bi</mi><mi mathvariant="normal">Fe</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> thin films

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Fabrication and electromechanical properties of a self-actuating $Pb ({Zr}_{0.52} {Ti}_{0.48}) O_{3}$ microcantilever using a direct patternable sol-gel method

Ghi Yuun Kang; Sang-Woo Bae; Hyung-Ho Park; Tae Song Kim

Appl. Phys. Lett. 88, 042904 (2006) https://doi.org/10.1063/1.2168261

Abstract

View articletitled, Fabrication and electromechanical properties of a self-actuating <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>Pb</mi><mrow><mo>(</mo><msub><mi>Zr</mi><mn>0.52</mn></msub><msub><mi>Ti</mi><mn>0.48</mn></msub><mo>)</mo></mrow><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> microcantilever using a direct patternable sol-gel method

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High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of ${SiO}_{2} ∕ {HfO}_{2} – {Al}_{2} O_{3} nanolaminate ∕ {Al}_{2} O_{3}$

Shi-Jin Ding; Min Zhang; Wei Chen; David Wei Zhang; Li-Kang Wang; X. P. Wang; Chunxiang Zhu; Ming-Fu Li

Appl. Phys. Lett. 88, 042905 (2006) https://doi.org/10.1063/1.2168227

Abstract

View articletitled, High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>SiO</mi><mn>2</mn></msub><mo>∕</mo><msub><mi>HfO</mi><mn>2</mn></msub><mtext>–</mtext><msub><mi>Al</mi><mn>2</mn></msub><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub><mspace width="0.3em"></mspace><mtext>nanolaminate</mtext><mo>∕</mo><msub><mi>Al</mi><mn>2</mn></msub><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math>

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Surface-layer effect in $Ca {Cu}_{3} {Ti}_{4} O_{12}$

C. C. Wang; L. W. Zhang

Appl. Phys. Lett. 88, 042906 (2006) https://doi.org/10.1063/1.2168495

Abstract

View articletitled, Surface-layer effect in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>Ca</mi><msub><mi>Cu</mi><mn>3</mn></msub><msub><mi>Ti</mi><mn>4</mn></msub><msub><mi mathvariant="normal">O</mi><mn>12</mn></msub></mrow></math>

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Polarized Raman scattering of multiferroic ${BiFeO}_{3}$ epitaxial films with rhombohedral $R 3 c$ symmetry

Manoj K. Singh; Hyun M. Jang; Sangwoo Ryu; Moon-Ho Jo

Appl. Phys. Lett. 88, 042907 (2006) https://doi.org/10.1063/1.2168038

Abstract

View articletitled, Polarized Raman scattering of multiferroic <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>BiFeO</mi><mn>3</mn></msub></mrow></math> epitaxial films with rhombohedral <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>R</mi><mn>3</mn><mi>c</mi></mrow></math> symmetry

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Single-domain electromechanical constants for $Pb ({Zn}_{1 ∕ 3} {Nb}_{2 ∕ 3}) O_{3} - 4.5 % Pb Ti O_{3}$ from micro-Brillouin scattering

Muhtar Ahart; Aravind Asthagiri; Przemyslaw Dera; Ho-kwang Mao; R. E. Cohen; Russell J. Hemley

Appl. Phys. Lett. 88, 042908 (2006) https://doi.org/10.1063/1.2159568

Abstract

View articletitled, Single-domain electromechanical constants for <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Pb</mi><mrow><mo>(</mo><msub><mi mathvariant="normal">Zn</mi><mrow><mn>1</mn><mo>∕</mo><mn>3</mn></mrow></msub><msub><mi mathvariant="normal">Nb</mi><mrow><mn>2</mn><mo>∕</mo><mn>3</mn></mrow></msub><mo>)</mo></mrow><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub><mo>–</mo><mn>4.5</mn><mo>%</mo><mi mathvariant="normal">Pb</mi><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> from micro-Brillouin scattering

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Hexagonal $Ba ({Ti}_{1 - x} {Mn}_{x}) O_{3}$ ceramics: Microstructural evolution and microwave dielectric properties

Sea-Fue Wang; Ya-Chi Hsu; Jinn P. Chu; Cheng-Hui Wu

Appl. Phys. Lett. 88, 042909 (2006) https://doi.org/10.1063/1.2168665

Abstract

View articletitled, Hexagonal <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ba</mi><mrow><mo>(</mo><msub><mi mathvariant="normal">Ti</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mi mathvariant="normal">Mn</mi><mi>x</mi></msub><mo>)</mo></mrow><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> ceramics: Microstructural evolution and microwave dielectric properties

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NANOSCALE SCIENCE AND DESIGN

Ordered InP nanostructures fabricated by ${Ar}^{+}$ -ion irradiation

S. K. Mohanta; R. K. Soni; S. Tripathy; S. J. Chua

Appl. Phys. Lett. 88, 043101 (2006) https://doi.org/10.1063/1.2167607

Abstract

View articletitled, Ordered InP nanostructures fabricated by <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msup><mrow><mi>Ar</mi></mrow><mrow><mo>+</mo></mrow></msup></mrow></math>-ion irradiation

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Signal amplitude and sensitivity of the Kelvin probe force microscopy

T. Ouisse; F. Martins; M. Stark; S. Huant; J. Chevrier

Appl. Phys. Lett. 88, 043102 (2006) https://doi.org/10.1063/1.2168251

Abstract

View articletitled, Signal amplitude and sensitivity of the Kelvin probe force microscopy

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Observation of resonant tunneling through a self-assembled InAs quantum dot layer

B. Aslan; H. C. Liu; J. A. Gupta; Z. R. Wasilewski; G. C. Aers; S. Raymond; M. Buchanan

Appl. Phys. Lett. 88, 043103 (2006) https://doi.org/10.1063/1.2164926

Abstract

View articletitled, Observation of resonant tunneling through a self-assembled InAs quantum dot layer

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Electrically robust ultralong nanowires of NiSi, ${Ni}_{2} Si$ ⁠, and ${Ni}_{31} {Si}_{12}$

Zhen Zhang; Per-Erik Hellström; Mikael Östling; Shi-Li Zhang; Jun Lu

Appl. Phys. Lett. 88, 043104 (2006) https://doi.org/10.1063/1.2168017

Abstract

View articletitled, Electrically robust ultralong nanowires of NiSi, <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>Ni</mi><mn>2</mn></msub><mi>Si</mi></mrow></math>⁠, and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>Ni</mi><mn>31</mn></msub><msub><mi>Si</mi><mn>12</mn></msub></mrow></math>

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Magnetic nanocables—Silicon carbide sheathed with iron-oxide-doped amorphous silica

C. Liu; R. W. Li; A. Belik; D. Golberg; Y. Bando; H. M. Cheng

Appl. Phys. Lett. 88, 043105 (2006) https://doi.org/10.1063/1.2167787

Abstract

View articletitled, Magnetic nanocables—Silicon carbide sheathed with iron-oxide-doped amorphous silica

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Field emission from Ni-disilicide nanorods formed by using implantation of Ni in Si coupled with laser annealing

Young-Woo Ok; Tae-Yeon Seong; Chel-Jong Choi; K. N. Tu

Appl. Phys. Lett. 88, 043106 (2006) https://doi.org/10.1063/1.2167797

Abstract

View articletitled, Field emission from Ni-disilicide nanorods formed by using implantation of Ni in Si coupled with laser annealing

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Optical and magnetic properties of Ni nanoparticles in rutile formed by Ni ion implantation

S. Zhu; L. M. Wang; X. T. Zu; X. Xiang

Appl. Phys. Lett. 88, 043107 (2006) https://doi.org/10.1063/1.2168037

Abstract

View articletitled, Optical and magnetic properties of Ni nanoparticles in rutile formed by Ni ion implantation

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Elastic modulus of amorphous ${SiO}_{2}$ nanowires

Hai Ni; Xiaodong Li; Hongsheng Gao

Appl. Phys. Lett. 88, 043108 (2006) https://doi.org/10.1063/1.2165275

Abstract

View articletitled, Elastic modulus of amorphous <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>SiO</mi><mn>2</mn></msub></mrow></math> nanowires

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Large redshift in photoluminescence of $p$ -doped InP nanowires induced by Fermi-level pinning

M. H. M. van Weert; O. Wunnicke; A. L. Roest; T. J. Eijkemans; A. Yu Silov; J. E. M. Haverkort; G. W. ’t Hooft; E. P. A. M. Bakkers

Appl. Phys. Lett. 88, 043109 (2006) https://doi.org/10.1063/1.2168255

Abstract

View articletitled, Large redshift in photoluminescence of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-doped InP nanowires induced by Fermi-level pinning

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Extended coherent exciton states in quantum dot arrays

Ameenah N. Al-Ahmadi; Sergio E. Ulloa

Appl. Phys. Lett. 88, 043110 (2006) https://doi.org/10.1063/1.2168257

Abstract

View articletitled, Extended coherent exciton states in quantum dot arrays

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Formation and activation energy of ${Cd}_{x} {Zn}_{1 - x} Te$ nanostructures with different dimensions grown on ZnTe buffer layers

T. W. Kim; H. S. Lee; H. L. Park

Appl. Phys. Lett. 88, 043111 (2006) https://doi.org/10.1063/1.2168244

Abstract

View articletitled, Formation and activation energy of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>Cd</mi><mi>x</mi></msub><msub><mi>Zn</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><mi>Te</mi></mrow></math> nanostructures with different dimensions grown on ZnTe buffer layers

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Photoluminescence from seeded three-dimensional $InAs ∕ GaAs$ quantum-dot crystals

S. Kiravittaya; A. Rastelli; O. G. Schmidt

Appl. Phys. Lett. 88, 043112 (2006) https://doi.org/10.1063/1.2168494

Abstract

View articletitled, Photoluminescence from seeded three-dimensional <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>InAs</mi><mo>∕</mo><mi>GaAs</mi></mrow></math> quantum-dot crystals

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Morphology of germanium nanowires grown in presence of $B_{2} H_{6}$

E. Tutuc; S. Guha; J. O. Chu

Appl. Phys. Lett. 88, 043113 (2006) https://doi.org/10.1063/1.2165089

Abstract

View articletitled, Morphology of germanium nanowires grown in presence of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">B</mi><mn>2</mn></msub><msub><mi mathvariant="normal">H</mi><mn>6</mn></msub></mrow></math>

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Influence of dielectric properties of a substrate upon plasmon resonance spectrum of supported Ag nanoparticles

G. Xu; Y. Chen; M. Tazawa; P. Jin

Appl. Phys. Lett. 88, 043114 (2006) https://doi.org/10.1063/1.2167827

Abstract

View articletitled, Influence of dielectric properties of a substrate upon plasmon resonance spectrum of supported Ag nanoparticles

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In situ epitaxial growth of ${TiO}_{2}$ on ${RuO}_{2}$ nanorods with reactive sputtering

Kai-Wen Cheng; Yu-Tsun Lin; Chun-Yu Chen; Chang-Po Hsiung; Jon-Yiew Gan; Jien-Wei Yeh; Chin-Hua Hsieh; Li-Jen Chou

Appl. Phys. Lett. 88, 043115 (2006) https://doi.org/10.1063/1.2166481

Abstract

View articletitled, In situ epitaxial growth of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>TiO</mi><mn>2</mn></msub></mrow></math> on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>RuO</mi><mn>2</mn></msub></mrow></math> nanorods with reactive sputtering

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Frequency control of photonic crystal membrane resonators by monolayer deposition

S. Strauf; M. T. Rakher; I. Carmeli; K. Hennessy; C. Meier; A. Badolato; M. J. A. DeDood; P. M. Petroff; E. L. Hu; E. G. Gwinn; D. Bouwmeester

Appl. Phys. Lett. 88, 043116 (2006) https://doi.org/10.1063/1.2164922

Abstract

View articletitled, Frequency control of photonic crystal membrane resonators by monolayer deposition

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Drift mobility in quantum nanostructures by scanning probe microscopy

F. Giannazzo; V. Raineri; S. Mirabella; G. Impellizzeri; F Priolo

Appl. Phys. Lett. 88, 043117 (2006) https://doi.org/10.1063/1.2168502

Abstract

View articletitled, Drift mobility in quantum nanostructures by scanning probe microscopy

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Resonant Raman scattering from CdS nanowires

A. Abdi; L. V. Titova; L. M. Smith; H. E. Jackson; J. M. Yarrison-Rice; J. L. Lensch; L. J. Lauhon

Appl. Phys. Lett. 88, 043118 (2006) https://doi.org/10.1063/1.2168507

Abstract

View articletitled, Resonant Raman scattering from CdS nanowires

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Size-selective high-yield growth of lead telluride (PbTe) nanocrystals using a chemical vapor deposition technique

Bo Zhang; J. He; Terry M. Tritt

Appl. Phys. Lett. 88, 043119 (2006) https://doi.org/10.1063/1.2168488

Abstract

View articletitled, Size-selective high-yield growth of lead telluride (PbTe) nanocrystals using a chemical vapor deposition technique

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DEVICE PHYSICS

Simultaneous direct detection of sub keV molecular and atomic ions with a delta-doped charge-coupled device at the focal plane of a miniature mass spectrometer

April D. Jewell; Todd J. Jones; Mahadeva P. Sinha; Shouleh Nikzad

Appl. Phys. Lett. 88, 043501 (2006) https://doi.org/10.1063/1.2166701

Abstract

View articletitled, Simultaneous direct detection of sub keV molecular and atomic ions with a delta-doped charge-coupled device at the focal plane of a miniature mass spectrometer

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Single-substrate cholesteric liquid crystal displays by colloidal self-assembly

Krishnan Chari; Charles M. Rankin; David M. Johnson; Thomas N. Blanton; Robert G. Capurso

Appl. Phys. Lett. 88, 043502 (2006) https://doi.org/10.1063/1.2167398

Abstract

View articletitled, Single-substrate cholesteric liquid crystal displays by colloidal self-assembly

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Effects of a thin Al layer insertion between AlGaN and Schottky gate on the $AlGaN ∕ GaN$ high electron mobility transistor characteristics

Takuma Nanjo; Toshiyuki Oishi; Muneyoshi Suita; Yuji Abe; Yasunori Tokuda

Appl. Phys. Lett. 88, 043503 (2006) https://doi.org/10.1063/1.2168036

Abstract

View articletitled, Effects of a thin Al layer insertion between AlGaN and Schottky gate on the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>AlGaN</mi><mo>∕</mo><mi>GaN</mi></mrow></math> high electron mobility transistor characteristics

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Mixing effect of hole-injecting and hole-transporting materials on the performance and lifetime of organic light-emitting devices

Youngkyoo Kim; Eonseok Oh; Hyuntaek Lim; Chang-Sik Ha

Appl. Phys. Lett. 88, 043504 (2006) https://doi.org/10.1063/1.2168014

Abstract

View articletitled, Mixing effect of hole-injecting and hole-transporting materials on the performance and lifetime of organic light-emitting devices

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Reliability of field programmable magnetic logic gate arrays

G. Reiss; D. Meyners

Appl. Phys. Lett. 88, 043505 (2006) https://doi.org/10.1063/1.2167609

Abstract

View articletitled, Reliability of field programmable magnetic logic gate arrays

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Ultraviolet band-pass Schottky barrier photodetectors formed by Al-doped ZnO contacts to $n - Ga N$

J. K. Sheu; M. L. Lee; C. J. Tun; S. W. Lin

Appl. Phys. Lett. 88, 043506 (2006) https://doi.org/10.1063/1.2167796

Abstract

View articletitled, Ultraviolet band-pass Schottky barrier photodetectors formed by Al-doped ZnO contacts to <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>n</mi><mtext>-</mtext><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi></mrow></math>

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Thermally stable and highly reflective AgAl alloy for enhancing light extraction efficiency in GaN light-emitting diodes

Ja-Yeon Kim; Seok-In Na; Ga-Young Ha; Min-Ki Kwon; Il-Kyu Park; Jae-Hong Lim; Seong-Ju Park; Min-Ho Kim; Dongyoul Choi; Kyeongik Min

Appl. Phys. Lett. 88, 043507 (2006) https://doi.org/10.1063/1.2168264

Abstract

View articletitled, Thermally stable and highly reflective AgAl alloy for enhancing light extraction efficiency in GaN light-emitting diodes

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Comparative study of the photoresponse from tetracene-based and pentacene-based thin-film transistors

Jeong-M. Choi; Jiyoul Lee; D. K. Hwang; Jae Hoon Kim; Seongil Im; Eugene Kim

Appl. Phys. Lett. 88, 043508 (2006) https://doi.org/10.1063/1.2168493

Abstract

View articletitled, Comparative study of the photoresponse from tetracene-based and pentacene-based thin-film transistors

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Threshold voltage as a measure of molecular level shift in organic thin-film transistors

Oren Tal; Yossi Rosenwaks; Yohai Roichman; Yevgeni Preezant; Nir Tessler; Calvin K. Chan; Antoine Kahn

Appl. Phys. Lett. 88, 043509 (2006) https://doi.org/10.1063/1.2167395

Abstract

View articletitled, Threshold voltage as a measure of molecular level shift in organic thin-film transistors

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Demonstration of an electrostatic-shielded cantilever

P. Pingue; V. Piazza; P. Baschieri; C. Ascoli; C. Menozzi; A. Alessandrini; P. Facci

Appl. Phys. Lett. 88, 043510 (2006) https://doi.org/10.1063/1.2168247

Abstract

View articletitled, Demonstration of an electrostatic-shielded cantilever

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Embodiment of the warm white-light-emitting diodes by using a ${Ba}^{2 +}$ codoped ${Sr}_{3} Si O_{5} : Eu$ phosphor

Joung Kyu Park; Kyoung Jae Choi; Jeong Ho Yeon; Seung Jae Lee; Chang Hae Kim

Appl. Phys. Lett. 88, 043511 (2006) https://doi.org/10.1063/1.2166471

Abstract

View articletitled, Embodiment of the warm white-light-emitting diodes by using a <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msup><mi>Ba</mi><mrow><mn>2</mn><mo>+</mo></mrow></msup></mrow></math> codoped <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>Sr</mi><mn>3</mn></msub><mi>Si</mi><msub><mi mathvariant="normal">O</mi><mn>5</mn></msub><mo>:</mo><mi>Eu</mi></mrow></math> phosphor

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Ferroelectric gate for control of transport properties of two-dimensional electron gas at $Al Ga N ∕ Ga N$ heterostructures

Igor Stolichnov; Lisa Malin; Paul Muralt; Nava Setter

Appl. Phys. Lett. 88, 043512 (2006) https://doi.org/10.1063/1.2168506

Abstract

View articletitled, Ferroelectric gate for control of transport properties of two-dimensional electron gas at <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Al</mi><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi></mrow></math> heterostructures

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APPLIED BIOPHYSICS

Scalable dope-coded biosensing particles for protein detection

Nguyen Ly; Nongjian Tao

Appl. Phys. Lett. 88, 043901 (2006) https://doi.org/10.1063/1.2166700

Abstract

View articletitled, Scalable dope-coded biosensing particles for protein detection

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Reproduction of mouse-pup ultrasonic vocalizations by nanocrystalline silicon thermoacoustic emitter

Takashi Kihara; Toshihiro Harada; Masahiro Kato; Kiyoshi Nakano; Osamu Murakami; Takefumi Kikusui; Nobuyoshi Koshida

Appl. Phys. Lett. 88, 043902 (2006) https://doi.org/10.1063/1.2168498

Abstract

View articletitled, Reproduction of mouse-pup ultrasonic vocalizations by nanocrystalline silicon thermoacoustic emitter

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INTERDISCIPLINARY AND GENERAL PHYSICS

Effects of dissolved nitrogen in improving barrier properties of ruthenium

M. Damayanti; T. Sritharan; S. G. Mhaisalkar; Z. H. Gan

Appl. Phys. Lett. 88, 044101 (2006) https://doi.org/10.1063/1.2167610

Abstract

View articletitled, Effects of dissolved nitrogen in improving barrier properties of ruthenium

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Laser generated plasmas characterized under magnetic field

C. Ducruet; N. Kornilov; C. de Julián Fernández; D. Givord

Appl. Phys. Lett. 88, 044102 (2006) https://doi.org/10.1063/1.2166689

Abstract

View articletitled, Laser generated plasmas characterized under magnetic field

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High-sensitivity, high-selectivity detection of chemical warfare agents

Michael B. Pushkarsky; Michael E. Webber; Tyson Macdonald; C. Kumar N. Patel

Appl. Phys. Lett. 88, 044103 (2006) https://doi.org/10.1063/1.2166692

Abstract

View articletitled, High-sensitivity, high-selectivity detection of chemical warfare agents

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

APPLIED BIOPHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

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