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LASERS, OPTICS, AND OPTOELECTRONICS

Three-dimensional horizontal circular spiral photonic crystals with stop gaps below $1 μ m$

Kock Khuen Seet; Vygantas Mizeikis; Saulius Juodkazis; Hiroaki Misawa

Appl. Phys. Lett. 88, 221101 (2006) https://doi.org/10.1063/1.2207841

Abstract

View articletitled, Three-dimensional horizontal circular spiral photonic crystals with stop gaps below <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>1</mn><mspace width="0.3em"></mspace><mi>μ</mi><mi mathvariant="normal">m</mi></mrow></math>

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Pancharatnam-Berry phase optical elements for wave front shaping in the visible domain: Switchable helical mode generation

L. Marrucci; C. Manzo; D. Paparo

Appl. Phys. Lett. 88, 221102 (2006) https://doi.org/10.1063/1.2207993

Abstract

View articletitled, Pancharatnam-Berry phase optical elements for wave front shaping in the visible domain: Switchable helical mode generation

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Experimental demonstration of negative index of refraction

Jiangfeng Zhou; Thomas Koschny; Lei Zhang; Gary Tuttle; Costas M. Soukoulis

Appl. Phys. Lett. 88, 221103 (2006) https://doi.org/10.1063/1.2208264

Abstract

View articletitled, Experimental demonstration of negative index of refraction

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Experimental investigations on the suppression of $Q$ switching in monolithic $40 GHz$ mode-locked semiconductor lasers

B. Hüttl; R. Kaiser; Ch. Kindel; S. Fidorra; W. Rehbein; H. Stolpe; G. Sahin; U. Bandelow; M. Radziunas; A. Vladimirov; H. Heidrich

Appl. Phys. Lett. 88, 221104 (2006) https://doi.org/10.1063/1.2208277

Abstract

View articletitled, Experimental investigations on the suppression of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">Q</mi></math> switching in monolithic <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>40</mn><mspace width="0.3em"></mspace><mi>GHz</mi></mrow></math> mode-locked semiconductor lasers

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Two-photon-induced quenching of photoluminescence in wide-gap semiconductor crystals

Makoto Torizawa; Yoshimasa Kawata

Appl. Phys. Lett. 88, 221105 (2006) https://doi.org/10.1063/1.2208278

Abstract

View articletitled, Two-photon-induced quenching of photoluminescence in wide-gap semiconductor crystals

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Chalcogenide glass Raman fiber laser

Stuart D. Jackson; Gilberto Anzueto-Sánchez

Appl. Phys. Lett. 88, 221106 (2006) https://doi.org/10.1063/1.2208369

Abstract

View articletitled, Chalcogenide glass Raman fiber laser

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Ground-state lasing of stacked $In As ∕ Ga As$ quantum dots with GaP strain-compensation layers grown by metal organic chemical vapor deposition

J. Tatebayashi; N. Nuntawong; Y. C. Xin; P. S. Wong; S. H. Huang; C. P. Hains; L. F. Lester; D. L. Huffaker

Appl. Phys. Lett. 88, 221107 (2006) https://doi.org/10.1063/1.2208553

Abstract

View articletitled, Ground-state lasing of stacked <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">In</mi><mi mathvariant="normal">As</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi></mrow></math> quantum dots with GaP strain-compensation layers grown by metal organic chemical vapor deposition

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$60 mW$ continuous-wave operation of InGaN laser diodes made by plasma-assisted molecular-beam epitaxy

C. Skierbiszewski; P. Wiśniewski; M. Siekacz; P. Perlin; A. Feduniewicz-Zmuda; G. Nowak; I. Grzegory; M. Leszczyński; S. Porowski

Appl. Phys. Lett. 88, 221108 (2006) https://doi.org/10.1063/1.2208929

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>60</mn><mspace width="0.3em"></mspace><mi>mW</mi></mrow></math> continuous-wave operation of InGaN laser diodes made by plasma-assisted molecular-beam epitaxy

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High-efficiency integrated polarized backlight system for liquid crystal display

Xingpeng Yang; Yingbai Yan; Guofan Jin

Appl. Phys. Lett. 88, 221109 (2006) https://doi.org/10.1063/1.2207219

Abstract

View articletitled, High-efficiency integrated polarized backlight system for liquid crystal display

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Terahertz radiation emission from GaMnAs

J. B. Héroux; Y. Ino; M. Kuwata-Gonokami; Y. Hashimoto; S. Katsumoto

Appl. Phys. Lett. 88, 221110 (2006) https://doi.org/10.1063/1.2206154

Abstract

View articletitled, Terahertz radiation emission from GaMnAs

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Direct imaging of propagation and damping of near-resonance surface plasmon polaritons using cathodoluminescence spectroscopy

J. T. van Wijngaarden; E. Verhagen; A. Polman; C. E. Ross; H. J. Lezec; H. A. Atwater

Appl. Phys. Lett. 88, 221111 (2006) https://doi.org/10.1063/1.2208556

Abstract

View articletitled, Direct imaging of propagation and damping of near-resonance surface plasmon polaritons using cathodoluminescence spectroscopy

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Comparison of epitaxial thin layer GaN and InP passivations on $In Ga As ∕ Ga As$ near-surface quantum wells

A. Aierken; J. Riikonen; J. Sormunen; M. Sopanen; H. Lipsanen

Appl. Phys. Lett. 88, 221112 (2006) https://doi.org/10.1063/1.2208557

Abstract

View articletitled, Comparison of epitaxial thin layer GaN and InP passivations on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">In</mi><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi></mrow></math> near-surface quantum wells

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Band gap discontinuity in ${Ga}_{0.9} {In}_{0.1} N_{0.027} {As}_{0.973 - x} {Sb}_{x} ∕ Ga As$ single quantum wells with $⩽ x < 0.06$ studied by contactless electroreflectance spectroscopy

R. Kudrawiec; M. Motyka; M. Gladysiewicz; J. Misiewicz; H. B. Yuen; S. R. Bank; H. Bae; M. A. Wistey; James S. Harris

Appl. Phys. Lett. 88, 221113 (2006) https://doi.org/10.1063/1.2208949

Abstract

View articletitled, Band gap discontinuity in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Ga</mi><mn>0.9</mn></msub><msub><mi mathvariant="normal">In</mi><mn>0.1</mn></msub><msub><mi mathvariant="normal">N</mi><mn>0.027</mn></msub><msub><mi mathvariant="normal">As</mi><mrow><mn>0.973</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mi mathvariant="normal">Sb</mi><mi>x</mi></msub><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi></mrow></math> single quantum wells with <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn></mn><mo>⩽</mo><mi>x</mi><mo><</mo><mn>0.06</mn></mrow></math> studied by contactless electroreflectance spectroscopy

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Multiphoton excitation of quantum dots by ultrashort and ultraintense laser pulses

Y. Fu; T.-T. Han; Y. Luo; H. Ågren

Appl. Phys. Lett. 88, 221114 (2006) https://doi.org/10.1063/1.2209209

Abstract

View articletitled, Multiphoton excitation of quantum dots by ultrashort and ultraintense laser pulses

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Overannealing effects in GaInNAs(Sb) alloys and their importance to laser applications

Seth R. Bank; Homan B. Yuen; Hopil Bae; Mark A. Wistey; James S. Harris, Jr.

Appl. Phys. Lett. 88, 221115 (2006) https://doi.org/10.1063/1.2208375

Abstract

View articletitled, Overannealing effects in GaInNAs(Sb) alloys and their importance to laser applications

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Near-field optical micromanipulation with cavity enhanced evanescent waves

Peter J. Reece; Veneranda Garcés-Chávez; Kishan Dholakia

Appl. Phys. Lett. 88, 221116 (2006) https://doi.org/10.1063/1.2208272

Abstract

View articletitled, Near-field optical micromanipulation with cavity enhanced evanescent waves

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Efficient diode-pumped $Yb : {Gd}_{2} Si O_{5}$ laser

Wenxue Li; Haifeng Pan; Liang’en Ding; Heping Zeng; Wei Lu; Guangjun Zhao; Chengfeng Yan; Liangbi Su; Jun Xu

Appl. Phys. Lett. 88, 221117 (2006) https://doi.org/10.1063/1.2206150

Abstract

View articletitled, Efficient diode-pumped <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Yb</mi><mo>:</mo><msub><mi mathvariant="normal">Gd</mi><mn>2</mn></msub><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>5</mn></msub></mrow></math> laser

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PLASMAS AND ELECTRICAL DISCHARGES

Reduction of noise in strapped magnetron by electric priming using anode shape modification

J. I. Kim; J. H. Won; G. S. Park; H. J. Ha; J. C. Shon

Appl. Phys. Lett. 88, 221501 (2006) https://doi.org/10.1063/1.2208273

Abstract

View articletitled, Reduction of noise in strapped magnetron by electric priming using anode shape modification

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Realization of freestanding InP membranes on Si by low-temperature wafer bonding and stress analysis using micro-Raman spectroscopy

J. Arokiaraj; S. Tripathy; S. Vicknesh; A. Ramam

Appl. Phys. Lett. 88, 221901 (2006) https://doi.org/10.1063/1.2207834

Abstract

View articletitled, Realization of freestanding InP membranes on Si by low-temperature wafer bonding and stress analysis using micro-Raman spectroscopy

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Analysis of second-harmonic generation of Lamb waves propagating in layered planar structures with imperfect interfaces

Mingxi Deng

Appl. Phys. Lett. 88, 221902 (2006) https://doi.org/10.1063/1.2207847

Abstract

View articletitled, Analysis of second-harmonic generation of Lamb waves propagating in layered planar structures with imperfect interfaces

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Exciton radiative lifetime in ZnO quantum dots embedded in $Si O_{x}$ matrix

X. H. Zhang; S. J. Chua; A. M. Yong; S. Y. Chow; H. Y. Yang; S. P. Lau; S. F. Yu

Appl. Phys. Lett. 88, 221903 (2006) https://doi.org/10.1063/1.2207848

Abstract

View articletitled, Exciton radiative lifetime in ZnO quantum dots embedded in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mi>x</mi></msub></mrow></math> matrix

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First-principles study of low compressibility osmium borides

Huiyang Gou; Li Hou; Jingwu Zhang; Hui Li; Guifang Sun; Faming Gao

Appl. Phys. Lett. 88, 221904 (2006) https://doi.org/10.1063/1.2208367

Abstract

View articletitled, First-principles study of low compressibility osmium borides

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Current-driven interactions between voids in metallic interconnect lines and their effects on line electrical resistance

Jaeseol Cho; M. Rauf Gungor; Dimitrios Maroudas

Appl. Phys. Lett. 88, 221905 (2006) https://doi.org/10.1063/1.2207849

Abstract

View articletitled, Current-driven interactions between voids in metallic interconnect lines and their effects on line electrical resistance

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Optical characterization of Eu-doped $β - {Ga}_{2} O_{3}$ thin films

P. Gollakota; A. Dhawan; P. Wellenius; L. M. Lunardi; J. F. Muth; Y. N. Saripalli; H. Y. Peng; H. O. Everitt

Appl. Phys. Lett. 88, 221906 (2006) https://doi.org/10.1063/1.2208368

Abstract

View articletitled, Optical characterization of Eu-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>β</mi><mtext>-</mtext><msub><mi mathvariant="normal">Ga</mi><mn>2</mn></msub><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> thin films

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Directed growth of single-crystal indium wires

Ishan Talukdar; Birol Ozturk; Bret N. Flanders; Tetsuya D. Mishima

Appl. Phys. Lett. 88, 221907 (2006) https://doi.org/10.1063/1.2208431

Abstract

View articletitled, Directed growth of single-crystal indium wires

Supplementary Material

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Probabilistic analysis of tetrahedral carbon hybridization in amorphous carbon films

D. Wan; K. Komvopoulos

Appl. Phys. Lett. 88, 221908 (2006) https://doi.org/10.1063/1.2204841

Abstract

View articletitled, Probabilistic analysis of tetrahedral carbon hybridization in amorphous carbon films

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Thermophysical properties of a ${Cu}_{46} {Zr}_{42} {Al}_{7} Y_{5}$ bulk metallic glass-forming liquid

G. J. Fan; J. J. Z. Li; Won-Kyu Rhim; D. C. Qiao; H. Choo; P. K. Liaw; W. L. Johnson

Appl. Phys. Lett. 88, 221909 (2006) https://doi.org/10.1063/1.2208550

Abstract

View articletitled, Thermophysical properties of a <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Cu</mi><mn>46</mn></msub><msub><mi mathvariant="normal">Zr</mi><mn>42</mn></msub><msub><mi mathvariant="normal">Al</mi><mn>7</mn></msub><msub><mi mathvariant="normal">Y</mi><mn>5</mn></msub></mrow></math> bulk metallic glass-forming liquid

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Simultaneous determination of apparent tortuosity and microstructure length scale and shape: Application to rigid open cell foams

T. E. Gómez Álvarez-Arenas; S. de la Fuente; I. González Gómez

Appl. Phys. Lett. 88, 221910 (2006) https://doi.org/10.1063/1.2208921

Abstract

View articletitled, Simultaneous determination of apparent tortuosity and microstructure length scale and shape: Application to rigid open cell foams

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Unified equation for the strength of bulk metallic glasses

B. Yang; C. T. Liu; T. G. Nieh

Appl. Phys. Lett. 88, 221911 (2006) https://doi.org/10.1063/1.2206099

Abstract

View articletitled, Unified equation for the strength of bulk metallic glasses

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Suppression of structural imperfection in strained Si by utilizing SiGe bulk substrate

N. Usami; Y. Nose; K. Fujiwara; K. Nakajima

Appl. Phys. Lett. 88, 221912 (2006) https://doi.org/10.1063/1.2208928

Abstract

View articletitled, Suppression of structural imperfection in strained Si by utilizing SiGe bulk substrate

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Effects of strain on the optimal annealing temperature of GaInNAsSb quantum wells

Homan B. Yuen; Seth R. Bank; Hopil Bae; Mark A. Wistey; James S. Harris, Jr.

Appl. Phys. Lett. 88, 221913 (2006) https://doi.org/10.1063/1.2208937

Abstract

View articletitled, Effects of strain on the optimal annealing temperature of GaInNAsSb quantum wells

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Room-temperature photoluminescence of $Zn O ∕ Mg O$ multiple quantum wells on Si (001) substrates

C. W. Sun; P. Xin; Z. W. Liu; Q. Y. Zhang

Appl. Phys. Lett. 88, 221914 (2006) https://doi.org/10.1063/1.2207553

Abstract

View articletitled, Room-temperature photoluminescence of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Zn</mi><mi mathvariant="normal">O</mi><mo>∕</mo><mi mathvariant="normal">Mg</mi><mi mathvariant="normal">O</mi></mrow></math> multiple quantum wells on Si (001) substrates

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$λ \sim 1.49 - 3.4 μ m$ intersubband absorptions in $(Cd S ∕ Zn Se) ∕ Be Te$ quantum wells grown by molecular beam epitaxy

B. S. Li; R. Akimoto; K. Akita; T. Hasama

Appl. Phys. Lett. 88, 221915 (2006) https://doi.org/10.1063/1.2208963

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>λ</mi><mo>∼</mo><mn>1.49</mn><mo>–</mo><mn>3.4</mn><mspace width="0.3em"></mspace><mi>μ</mi><mi mathvariant="normal">m</mi></mrow></math> intersubband absorptions in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mo>(</mo><mi mathvariant="normal">Cd</mi><mi mathvariant="normal">S</mi><mo>∕</mo><mi mathvariant="normal">Zn</mi><mi mathvariant="normal">Se</mi><mo>)</mo></mrow><mo>∕</mo><mi mathvariant="normal">Be</mi><mi mathvariant="normal">Te</mi></mrow></math> quantum wells grown by molecular beam epitaxy

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Mass transport and alloying during InN growth on GaN by molecular-beam epitaxy

Y. Liu; M. H. Xie; H. S. Wu; S. Y. Tong

Appl. Phys. Lett. 88, 221916 (2006) https://doi.org/10.1063/1.2209210

Abstract

View articletitled, Mass transport and alloying during InN growth on GaN by molecular-beam epitaxy

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Performance enhancement of composition-graded-base type-II $In P ∕ Ga As Sb$ double-heterojunction bipolar transistors with $f_{T} > 500 GHz$

William Snodgrass; Bing-Ruey Wu; Walid Hafez; K. Y. Cheng; Milton Feng

Appl. Phys. Lett. 88, 222101 (2006) https://doi.org/10.1063/1.2207843

Abstract

View articletitled, Performance enhancement of composition-graded-base type-II <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">In</mi><mi mathvariant="normal">P</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi><mi mathvariant="normal">Sb</mi></mrow></math> double-heterojunction bipolar transistors with <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>f</mi><mi>T</mi></msub><mo>></mo><mn>500</mn><mspace width="0.3em"></mspace><mi>GHz</mi></mrow></math>

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Evolution of Schottky barrier heights at $Ni ∕ Hf O_{2}$ interfaces

Q. Li; Y. F. Dong; S. J. Wang; J. W. Chai; A. C. H. Huan; Y. P. Feng; C. K. Ong

Appl. Phys. Lett. 88, 222102 (2006) https://doi.org/10.1063/1.2208271

Abstract

View articletitled, Evolution of Schottky barrier heights at <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ni</mi><mo>∕</mo><mi mathvariant="normal">Hf</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> interfaces

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Self-aligned surface treatment for thin-film organic transistors

Kris Myny; Stijn De Vusser; Soeren Steudel; Dimitri Janssen; Robert Müller; Stijn De Jonge; Stijn Verlaak; Jan Genoe; Paul Heremans

Appl. Phys. Lett. 88, 222103 (2006) https://doi.org/10.1063/1.2207846

Abstract

View articletitled, Self-aligned surface treatment for thin-film organic transistors

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Conductive atomic force microscopy studies of thin $Si O_{2}$ layer degradation

Patrick Fiorenza; Wouter Polspoel; Wilfried Vandervorst

Appl. Phys. Lett. 88, 222104 (2006) https://doi.org/10.1063/1.2208370

Abstract

View articletitled, Conductive atomic force microscopy studies of thin <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> layer degradation

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Suppression of field screening in nematic liquid crystals by carbon nanotubes

Hui-Yu Chen; Wei Lee

Appl. Phys. Lett. 88, 222105 (2006) https://doi.org/10.1063/1.2208373

Abstract

View articletitled, Suppression of field screening in nematic liquid crystals by carbon nanotubes

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X-ray photoconductivity due to trap-sensitive relaxation of hot carriers

I. Konovalov; L. Makhova; D. Wett; K.-H. Hallmeier; R. Szargan; R. Mitdank

Appl. Phys. Lett. 88, 222106 (2006) https://doi.org/10.1063/1.2208376

Abstract

View articletitled, X-ray photoconductivity due to trap-sensitive relaxation of hot carriers

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Trapping of Pd, Au, and Cu by implantation-induced nanocavities and dislocations in Si

D. A. Brett; D. J. Llewellyn; M. C. Ridgway

Appl. Phys. Lett. 88, 222107 (2006) https://doi.org/10.1063/1.2208382

Abstract

View articletitled, Trapping of Pd, Au, and Cu by implantation-induced nanocavities and dislocations in Si

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Influence of processing conditions on the stability of poly(3-hexylthiophene)-based field-effect transistors

L. A. Majewski; J. W. Kingsley; C. Balocco; A. M. Song

Appl. Phys. Lett. 88, 222108 (2006) https://doi.org/10.1063/1.2208938

Abstract

View articletitled, Influence of processing conditions on the stability of poly(3-hexylthiophene)-based field-effect transistors

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Photoemission study of the poly(3-hexylthiophene)/Au interface

J. E. Lyon; A. J. Cascio; M. M. Beerbom; R. Schlaf; Y. Zhu; S. A. Jenekhe

Appl. Phys. Lett. 88, 222109 (2006) https://doi.org/10.1063/1.2208267

Abstract

View articletitled, Photoemission study of the poly(3-hexylthiophene)/Au interface

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Universal single-phonon variable range hopping conduction for inorganic semiconducting polycrystalline films

Seung Yeop Myong; Koeng Su Lim

Appl. Phys. Lett. 88, 222110 (2006) https://doi.org/10.1063/1.2208383

Abstract

View articletitled, Universal single-phonon variable range hopping conduction for inorganic semiconducting polycrystalline films

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Influence of $d - d$ transition bands on electrical resistivity in Ni doped polycrystalline ZnO

Shubra Singh; N. Rama; M. S. Ramachandra Rao

Appl. Phys. Lett. 88, 222111 (2006) https://doi.org/10.1063/1.2208563

Abstract

View articletitled, Influence of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>d</mi><mtext>-</mtext><mi>d</mi></mrow></math> transition bands on electrical resistivity in Ni doped polycrystalline ZnO

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Control of carrier transport in organic semiconductors by aluminum doping

Z. J. Wang; Y. Wu; Y. C. Zhou; J. Zhou; S. T. Zhang; X. M. Ding; X. Y. Hou; Z. Q. Zhu

Appl. Phys. Lett. 88, 222112 (2006) https://doi.org/10.1063/1.2208947

Abstract

View articletitled, Control of carrier transport in organic semiconductors by aluminum doping

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Structural and electrical characterizations of the pulsed-laser-deposition-grown ${Sc}_{2} O_{3} ∕ Ga N$ heterostructure

Chang Liu; Eng Fong Chor; Leng Seow Tan; Yufeng Dong

Appl. Phys. Lett. 88, 222113 (2006) https://doi.org/10.1063/1.2209178

Abstract

View articletitled, Structural and electrical characterizations of the pulsed-laser-deposition-grown <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Sc</mi><mn>2</mn></msub><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi></mrow></math> heterostructure

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Low-resistivity, stable $p$ -type ZnO thin films realized using a Li–N dual-acceptor doping method

J. G. Lu; Y. Z. Zhang; Z. Z. Ye; L. P. Zhu; L. Wang; B. H. Zhao; Q. L. Liang

Appl. Phys. Lett. 88, 222114 (2006) https://doi.org/10.1063/1.2209191

Abstract

View articletitled, Low-resistivity, stable <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-type ZnO thin films realized using a Li–N dual-acceptor doping method

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Preparation and thermoelectric properties of sintered iodine-containing clathrate compounds ${Ge}_{38} {Sb}_{8} I_{8}$ and ${Sn}_{38} {Sb}_{8} I_{8}$

Kengo Kishimoto; Shuntaro Arimura; Tsuyoshi Koyanagi

Appl. Phys. Lett. 88, 222115 (2006) https://doi.org/10.1063/1.2209207

Abstract

View articletitled, Preparation and thermoelectric properties of sintered iodine-containing clathrate compounds <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Ge</mi><mn>38</mn></msub><msub><mi mathvariant="normal">Sb</mi><mn>8</mn></msub><msub><mi mathvariant="normal">I</mi><mn>8</mn></msub></mrow></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Sn</mi><mn>38</mn></msub><msub><mi mathvariant="normal">Sb</mi><mn>8</mn></msub><msub><mi mathvariant="normal">I</mi><mn>8</mn></msub></mrow></math>

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MAGNETISM AND SUPERCONDUCTIVITY

Single intrinsic Josephson junction with double-sided fabrication technique

L. X. You; M. Torstensson; A. Yurgens; D. Winkler; C. T. Lin; B. Liang

Appl. Phys. Lett. 88, 222501 (2006) https://doi.org/10.1063/1.2207827

Abstract

View articletitled, Single intrinsic Josephson junction with double-sided fabrication technique

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Observation of magnetism in Au thin films

S. Reich; G. Leitus; Y. Feldman

Appl. Phys. Lett. 88, 222502 (2006) https://doi.org/10.1063/1.2208690

Abstract

View articletitled, Observation of magnetism in Au thin films

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Tunneling magnetoresistance in (001)-oriented $Fe Co ∕ Mg O ∕ Fe Co$ magnetic tunneling junctions grown by sputtering deposition

T. Moriyama; C. Ni; W. G. Wang; X. Zhang; John Q. Xiao

Appl. Phys. Lett. 88, 222503 (2006) https://doi.org/10.1063/1.2207835

Abstract

View articletitled, Tunneling magnetoresistance in (001)-oriented <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Fe</mi><mi mathvariant="normal">Co</mi><mo>∕</mo><mi mathvariant="normal">Mg</mi><mi mathvariant="normal">O</mi><mo>∕</mo><mi mathvariant="normal">Fe</mi><mi mathvariant="normal">Co</mi></mrow></math> magnetic tunneling junctions grown by sputtering deposition

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Current-perpendicular-to-plane magnetoresistance in epitaxial ${Co}_{2} Mn Si ∕ Cr ∕ {Co}_{2} Mn Si$ trilayers

K. Yakushiji; K. Saito; S. Mitani; K. Takanashi; Y. K. Takahashi; K. Hono

Appl. Phys. Lett. 88, 222504 (2006) https://doi.org/10.1063/1.2207987

Abstract

View articletitled, Current-perpendicular-to-plane magnetoresistance in epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Co</mi><mn>2</mn></msub><mi mathvariant="normal">Mn</mi><mi mathvariant="normal">Si</mi><mo>∕</mo><mi mathvariant="normal">Cr</mi><mo>∕</mo><msub><mi mathvariant="normal">Co</mi><mn>2</mn></msub><mi mathvariant="normal">Mn</mi><mi mathvariant="normal">Si</mi></mrow></math> trilayers

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Power-law $E (J)$ characteristic converted from field-amplitude and frequency dependent ac susceptibility in superconductors

D.-X. Chen; E. Pardo

Appl. Phys. Lett. 88, 222505 (2006) https://doi.org/10.1063/1.2207996

Abstract

View articletitled, Power-law <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>E</mi><mrow><mo>(</mo><mi>J</mi><mo>)</mo></mrow></mrow></math> characteristic converted from field-amplitude and frequency dependent ac susceptibility in superconductors

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Magnetic and transport properties of multilayer nanoscale antidot arrays

C. C. Wang; A. O. Adeyeye; N. Singh

Appl. Phys. Lett. 88, 222506 (2006) https://doi.org/10.1063/1.2208276

Abstract

View articletitled, Magnetic and transport properties of multilayer nanoscale antidot arrays

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Low-current-induced electrical hysteresis in ${Nd}_{0.7} {Ca}_{0.3} Mn O_{3}$

Daniel Hsu; J. G. Lin; W. F. Wu

Appl. Phys. Lett. 88, 222507 (2006) https://doi.org/10.1063/1.2208379

Abstract

View articletitled, Low-current-induced electrical hysteresis in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Nd</mi><mn>0.7</mn></msub><msub><mi mathvariant="normal">Ca</mi><mn>0.3</mn></msub><mi mathvariant="normal">Mn</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math>

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Carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor thin-film structures

R. R. Gareev; Yu. V. Bugoslavsky; R. Schreiber; A. Paul; M. Sperl; M. Döppe

Appl. Phys. Lett. 88, 222508 (2006) https://doi.org/10.1063/1.2208552

Abstract

View articletitled, Carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor thin-film structures

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Interfacial effects on magnetostriction of $Co Fe B ∕ Al O_{x} ∕ Co$ junction

Yuan-Tsung Chen; S. U. Jen; Y. D. Yao; Jenn-Ming Wu; An-Cheng Sun

Appl. Phys. Lett. 88, 222509 (2006) https://doi.org/10.1063/1.2208377

Abstract

View articletitled, Interfacial effects on magnetostriction of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Co</mi><mi mathvariant="normal">Fe</mi><mi mathvariant="normal">B</mi><mo>∕</mo><mi mathvariant="normal">Al</mi><msub><mi mathvariant="normal">O</mi><mi>x</mi></msub><mo>∕</mo><mi mathvariant="normal">Co</mi></mrow></math> junction

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Anomalous magnetic nanostructural evolution in annealed CuCo granular thin films

Nam H. Kim; Jordan Peck; Jian-Qing Wang

Appl. Phys. Lett. 88, 222510 (2006) https://doi.org/10.1063/1.2208959

Abstract

View articletitled, Anomalous magnetic nanostructural evolution in annealed CuCo granular thin films

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Planar $Mg B_{2}$ superconductor-normal metal-superconductor Josephson junctions fabricated using epitaxial $Mg B_{2} ∕ Ti B_{2}$ bilayers

Ke Chen; Y. Cui; Qi Li; X. X. Xi; Shane A. Cybart; R. C. Dynes; X. Weng; E. C. Dickey; J. M. Redwing

Appl. Phys. Lett. 88, 222511 (2006) https://doi.org/10.1063/1.2208555

Abstract

View articletitled, Planar <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Mg</mi><msub><mi mathvariant="normal">B</mi><mn>2</mn></msub></mrow></math> superconductor-normal metal-superconductor Josephson junctions fabricated using epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Mg</mi><msub><mi mathvariant="normal">B</mi><mn>2</mn></msub><mo>∕</mo><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">B</mi><mn>2</mn></msub></mrow></math> bilayers

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Recording potential of bit-patterned media

H. J. Richter; A. Y. Dobin; R. T. Lynch; D. Weller; R. M. Brockie; O. Heinonen; K. Z. Gao; J. Xue; R. J. M. v. d. Veerdonk; P. Asselin; M. F. Erden

Appl. Phys. Lett. 88, 222512 (2006) https://doi.org/10.1063/1.2209179

Abstract

View articletitled, Recording potential of bit-patterned media

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Bistable resistance state induced by Joule self-heating in manganites: A general phenomenon

Y. F. Chen; M. Ziese; P. Esquinazi

Appl. Phys. Lett. 88, 222513 (2006) https://doi.org/10.1063/1.2209204

Abstract

View articletitled, Bistable resistance state induced by Joule self-heating in manganites: A general phenomenon

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DIELECTRICS AND FERROELECTRICITY

Impact of Zr addition on properties of atomic layer deposited $Hf O_{2}$

D. H. Triyoso; R. I. Hegde; J. K. Schaeffer; D. Roan; P. J. Tobin; S. B. Samavedam; B. E. White, Jr.; R. Gregory; X.-D. Wang

Appl. Phys. Lett. 88, 222901 (2006) https://doi.org/10.1063/1.2208558

Abstract

View articletitled, Impact of Zr addition on properties of atomic layer deposited <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Hf</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math>

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Superior electrical properties of crystalline ${Er}_{2} O_{3}$ films epitaxially grown on Si substrates

S. Chen; Y. Y. Zhu; R. Xu; Y. Q. Wu; X. J. Yang; Y. L. Fan; F. Lu; Z. M. Jiang; J. Zou

Appl. Phys. Lett. 88, 222902 (2006) https://doi.org/10.1063/1.2208958

Abstract

View articletitled, Superior electrical properties of crystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Er</mi><mn>2</mn></msub><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> films epitaxially grown on Si substrates

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Polarizability of phthalocyanine based molecular systems: A first-principles electronic structure study

R. Ramprasad; N. Shi

Appl. Phys. Lett. 88, 222903 (2006) https://doi.org/10.1063/1.2209197

Abstract

View articletitled, Polarizability of phthalocyanine based molecular systems: A first-principles electronic structure study

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Characterization of (100)-oriented $Bi Sc O_{3} - Pb Ti O_{3}$ thin films synthesized by a modified sol-gel method

Hai Wen; Xiaohui Wang; Xiangyun Deng; Longtu Li

Appl. Phys. Lett. 88, 222904 (2006) https://doi.org/10.1063/1.2208961

Abstract

View articletitled, Characterization of (100)-oriented <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Bi</mi><mi mathvariant="normal">Sc</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub><mo>–</mo><mi mathvariant="normal">Pb</mi><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> thin films synthesized by a modified sol-gel method

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NANOSCALE SCIENCE AND DESIGN

Proton implantation-induced intermixing of $In As ∕ In P$ quantum dots

S. Barik; H. H. Tan; C. Jagadish

Appl. Phys. Lett. 88, 223101 (2006) https://doi.org/10.1063/1.2208371

Abstract

View articletitled, Proton implantation-induced intermixing of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">In</mi><mi mathvariant="normal">As</mi><mo>∕</mo><mi mathvariant="normal">In</mi><mi mathvariant="normal">P</mi></mrow></math> quantum dots

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Two color plasmon excitation in an electron-hole bilayer structure controlled by the spin-orbit interaction

C. H. Yang; A. Wright; F. Gao; C. Zhang; Z. Zeng; W. Xu

Appl. Phys. Lett. 88, 223102 (2006) https://doi.org/10.1063/1.2208380

Abstract

View articletitled, Two color plasmon excitation in an electron-hole bilayer structure controlled by the spin-orbit interaction

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Simultaneous measurements of conductivity and magnetism by using microprobes and electron holography

Y. Murakami; N. Kawamoto; D. Shindo; I. Ishikawa; S. Deguchi; K. Yamazaki; M. Inoue; Y. Kondo; K. Suganuma

Appl. Phys. Lett. 88, 223103 (2006) https://doi.org/10.1063/1.2208384

Abstract

View articletitled, Simultaneous measurements of conductivity and magnetism by using microprobes and electron holography

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Photothermal operation of high frequency nanoelectromechanical systems

A. Sampathkumar; T. W. Murray; K. L. Ekinci

Appl. Phys. Lett. 88, 223104 (2006) https://doi.org/10.1063/1.2208381

Abstract

View articletitled, Photothermal operation of high frequency nanoelectromechanical systems

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Substitution reactions of carbon nanotube template

Chi Pui Li; Ying Chen; John Fitz Gerald

Appl. Phys. Lett. 88, 223105 (2006) https://doi.org/10.1063/1.2208548

Abstract

View articletitled, Substitution reactions of carbon nanotube template

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Optical limiting properties of metal nanowires

Hui Pan; Weizhe Chen; Yuan Ping Feng; Wei Ji; Jianyi Lin

Appl. Phys. Lett. 88, 223106 (2006) https://doi.org/10.1063/1.2208549

Abstract

View articletitled, Optical limiting properties of metal nanowires

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Novel tungsten oxide microneedles with nanosized tips

Yuehui He; Shiliang Wang; Baiyun Huang; C. T. Liu; P. K. Liaw

Appl. Phys. Lett. 88, 223107 (2006) https://doi.org/10.1063/1.2208924

Abstract

View articletitled, Novel tungsten oxide microneedles with nanosized tips

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Imperfect oriented attachment: Direct activation of high-temperature ferromagnetism in diluted magnetic semiconductor nanocrystals

Xuefeng Wang; J. B. Xu; Ning Ke; Jiaguo Yu; Juan Wang; Quan Li; H. C. Ong; R. Zhang

Appl. Phys. Lett. 88, 223108 (2006) https://doi.org/10.1063/1.2208554

Abstract

View articletitled, Imperfect oriented attachment: Direct activation of high-temperature ferromagnetism in diluted magnetic semiconductor nanocrystals

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Controlled assembly of polymer nanofibers: From helical springs to fully extended

Min Kyoon Shin; Sun I. Kim; Seon Jeong Kim

Appl. Phys. Lett. 88, 223109 (2006) https://doi.org/10.1063/1.2208689

Abstract

View articletitled, Controlled assembly of polymer nanofibers: From helical springs to fully extended

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High resolution resonant photoluminescence excitation of $Cd Se ∕ Zn S$ nanocrystals at low temperatures

Olivier Labeau; Philippe Tamarat; Brahim Lounis

Appl. Phys. Lett. 88, 223110 (2006) https://doi.org/10.1063/1.2208962

Abstract

View articletitled, High resolution resonant photoluminescence excitation of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Cd</mi><mi mathvariant="normal">Se</mi><mo>∕</mo><mi mathvariant="normal">Zn</mi><mi mathvariant="normal">S</mi></mrow></math> nanocrystals at low temperatures

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Fabrication of nanoscale gaps using a combination of self-assembled molecular and electron beam lithographic techniques

R. Negishi; T. Hasegawa; K. Terabe; M. Aono; T. Ebihara; H. Tanaka; T. Ogawa

Appl. Phys. Lett. 88, 223111 (2006) https://doi.org/10.1063/1.2209208

Abstract

View articletitled, Fabrication of nanoscale gaps using a combination of self-assembled molecular and electron beam lithographic techniques

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Gated lateral charge transport in self-assembled 1-pyrylphosphonic acid molecular multilayers

J. Dong; H. L. Yip; H. Ma; A. K.-Y. Jen; B. A. Parviz

Appl. Phys. Lett. 88, 223112 (2006) https://doi.org/10.1063/1.2208956

Abstract

View articletitled, Gated lateral charge transport in self-assembled 1-pyrylphosphonic acid molecular multilayers

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Electronic structures of group-III–nitride nanorods studied by x-ray absorption, x-ray emission, and Raman spectroscopy

C. W. Pao; P. D. Babu; H. M. Tsai; J. W. Chiou; S. C. Ray; S. C. Yang; F. Z. Chien; W. F. Pong; M.-H. Tsai; C. W. Hsu; L. C. Chen; C. C. Chen; K. H. Chen; H.-J. Lin; J. F. Lee; J. H. Guo

Appl. Phys. Lett. 88, 223113 (2006) https://doi.org/10.1063/1.2207836

Abstract

View articletitled, Electronic structures of group-III–nitride nanorods studied by x-ray absorption, x-ray emission, and Raman spectroscopy

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Radial breathinglike mode of the collapsed single-walled carbon nanotube bundle under hydrostatic pressure

Gang Wu; Xiaoping Yang; Jinming Dong

Appl. Phys. Lett. 88, 223114 (2006) https://doi.org/10.1063/1.2208274

Abstract

View articletitled, Radial breathinglike mode of the collapsed single-walled carbon nanotube bundle under hydrostatic pressure

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DEVICE PHYSICS

Demonstration of optical microfiber knot resonators

Xiaoshun Jiang; Limin Tong; Guillaume Vienne; Xin Guo; Albert Tsao; Qing Yang; Deren Yang

Appl. Phys. Lett. 88, 223501 (2006) https://doi.org/10.1063/1.2207986

Abstract

View articletitled, Demonstration of optical microfiber knot resonators

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Fabrication of fin field-effect transistor silicon nanocrystal floating gate memory using photochemical vapor deposition

Sang Soo Kim; Won-Ju Cho; Chang-Geun Ahn; Kiju Im; Jong-Heon Yang; In-Bok Baek; Seongjae Lee; Koeng Su Lim

Appl. Phys. Lett. 88, 223502 (2006) https://doi.org/10.1063/1.2208268

Abstract

View articletitled, Fabrication of fin field-effect transistor silicon nanocrystal floating gate memory using photochemical vapor deposition

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Fluorocarbon film as cathode protective coating in organic light-emitting devices

H. Y. Sun; K. M. Lau; K. C. Lau; M. Y. Chan; M. K. Fung; C. S. Lee; S. T. Lee

Appl. Phys. Lett. 88, 223503 (2006) https://doi.org/10.1063/1.2208270

Abstract

View articletitled, Fluorocarbon film as cathode protective coating in organic light-emitting devices

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$5 GHz$ surface acoustic wave devices based on aluminum nitride/diamond layered structure realized using electron beam lithography

P. Kirsch; M. B. Assouar; O. Elmazria; V. Mortet; P. Alnot

Appl. Phys. Lett. 88, 223504 (2006) https://doi.org/10.1063/1.2208372

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>5</mn><mspace width="0.3em"></mspace><mi>GHz</mi></mrow></math> surface acoustic wave devices based on aluminum nitride/diamond layered structure realized using electron beam lithography

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Conversion efficiency of 10.8% by a dye-sensitized solar cell using a $Ti O_{2}$ electrode with high haze

Yasuo Chiba; Ashraful Islam; Ryoichi Komiya; Naoki Koide; Liyuan Han

Appl. Phys. Lett. 88, 223505 (2006) https://doi.org/10.1063/1.2208920

Abstract

View articletitled, Conversion efficiency of 10.8% by a dye-sensitized solar cell using a <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> electrode with high haze

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High-temperature threshold characteristics of a symmetrically graded $In Al As ∕ {In}_{x} {Ga}_{1 - x} As ∕ Ga As$ metamorphic high electron mobility transistor

C. S. Lee; Y. J. Chen; W. C. Hsu; K. H. Su; J. C. Huang; D. H. Huang; C. L. Wu

Appl. Phys. Lett. 88, 223506 (2006) https://doi.org/10.1063/1.2208926

Abstract

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Colossal electroresistance effect at metal electrode/ ${La}_{1 - x} {Sr}_{1 + x} Mn O_{4}$ interfaces

Y. Tokunaga; Y. Kaneko; J. P. He; T. Arima; A. Sawa; T. Fujii; M. Kawasaki; Y. Tokura

Appl. Phys. Lett. 88, 223507 (2006) https://doi.org/10.1063/1.2208922

Abstract

View articletitled, Colossal electroresistance effect at metal electrode/<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">La</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mi mathvariant="normal">Sr</mi><mrow><mn>1</mn><mo>+</mo><mi>x</mi></mrow></msub><mi mathvariant="normal">Mn</mi><msub><mi mathvariant="normal">O</mi><mn>4</mn></msub></mrow></math> interfaces

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Efficient blue organic light-emitting devices based on oligo(phenylenevinylene)

Yingfang Zhang; Gang Cheng; Shufen Chen; Yan Li; Yi Zhao; Shiyong Liu; Feng He; Leilei Tian; Yuguang Ma

Appl. Phys. Lett. 88, 223508 (2006) https://doi.org/10.1063/1.2209200

Abstract

View articletitled, Efficient blue organic light-emitting devices based on oligo(phenylenevinylene)

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High performance organic light-emitting diodes fabricated via a vacuum-free lamination process

Jie Liu; Larry N. Lewis; Tami J. Faircloth; Anil R. Duggal

Appl. Phys. Lett. 88, 223509 (2006) https://doi.org/10.1063/1.2209199

Abstract

View articletitled, High performance organic light-emitting diodes fabricated via a vacuum-free lamination process

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Polymer space-charge-limited transistor

Yu-Chiang Chao; Hsin-Fei Meng; Sheng-Fu Horng

Appl. Phys. Lett. 88, 223510 (2006) https://doi.org/10.1063/1.2207838

Abstract

View articletitled, Polymer space-charge-limited transistor

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High tolerance to total ionizing dose of $Ω$ -shaped gate field-effect transistors

Marc Gaillardin; Philippe Paillet; Véronique Ferlet-Cavrois; Sorin Cristoloveanu; Olivier Faynot; Carine Jahan

Appl. Phys. Lett. 88, 223511 (2006) https://doi.org/10.1063/1.2206097

Abstract

View articletitled, High tolerance to total ionizing dose of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">Ω</mi></math>-shaped gate field-effect transistors

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APPLIED BIOPHYSICS

Confocal three dimensional tracking of a single nanoparticle with concurrent spectroscopic readouts

Hu Cang; Chung M. Wong; C. Shan Xu; Abbas H. Rizvi; Haw Yang

Appl. Phys. Lett. 88, 223901 (2006) https://doi.org/10.1063/1.2204652

Abstract

View articletitled, Confocal three dimensional tracking of a single nanoparticle with concurrent spectroscopic readouts

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INTERDISCIPLINARY AND GENERAL PHYSICS

Guided wave transduction experiment using a circular magnetostrictive patch and a figure-of-eight coil in nonferromagnetic plates

Seung Hyun Cho; Ju Seung Lee; Yoon Young Kim

Appl. Phys. Lett. 88, 224101 (2006) https://doi.org/10.1063/1.2205724

Abstract

View articletitled, Guided wave transduction experiment using a circular magnetostrictive patch and a figure-of-eight coil in nonferromagnetic plates

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Imaging defects in strained-silicon thin films by glancing-incidence x-ray topography

D. R. Black; J. C. Woicik; M. Erdtmann; T. A. Langdo

Appl. Phys. Lett. 88, 224102 (2006) https://doi.org/10.1063/1.2209411

Abstract

View articletitled, Imaging defects in strained-silicon thin films by glancing-incidence x-ray topography

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Polymer-based device for efficient mixing of viscoelastic fluids

Hiong Yap Gan; Yee Cheong Lam; Nam-Trung Nguyen

Appl. Phys. Lett. 88, 224103 (2006) https://doi.org/10.1063/1.2206682

Abstract

View articletitled, Polymer-based device for efficient mixing of viscoelastic fluids

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COMMENTS

Comment on “Tungsten nanowires and their field electron emission properties” [Appl. Phys. Lett. 81, 745 (2002)]

Xin Bai; Gengmin Zhang

Appl. Phys. Lett. 88, 226101 (2006) https://doi.org/10.1063/1.2208687

Extract

View articletitled, Comment on “Tungsten nanowires and their field electron emission properties” [Appl. Phys. Lett. 81, 745 (2002)]

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Comment on “A transparent metal: Nb-doped anatase $Ti O_{2}$ ” [
Appl. Phys. Lett.

86
,
252101
(
2005
)]

Q. Wan; T. H. Wang

Appl. Phys. Lett. 88, 226102 (2006) https://doi.org/10.1063/1.2208447

Extract

View articletitled, Comment on “A transparent metal: Nb-doped anatase <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math>” [<div class="source">Appl. Phys. Lett.</div> <div class="volume">86</div>, <div class="fpage">252101</div> (<div class="year">2005</div>)]

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Response to “Comment on ‘A transparent metal: Nb-doped anatase $Ti O_{2}$ ’ [
Appl. Phys. Lett.

86
,
252101
(
2005
)]”

Yutaka Furubayashi; Taro Hitosugi; Tetsuya Hasegawa

Appl. Phys. Lett. 88, 226103 (2006) https://doi.org/10.1063/1.2208448

Extract

View articletitled, Response to “Comment on ‘A transparent metal: Nb-doped anatase <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math>’ [<div class="source">Appl. Phys. Lett.</div> <div class="volume">86</div>, <div class="fpage">252101</div> (<div class="year">2005</div>)]”

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

APPLIED BIOPHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

COMMENTS

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