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Issues
8 August 2005
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
Asynchronous optical sampling terahertz time-domain spectroscopy for ultrahigh spectral resolution and rapid data acquisition
In Special Collection:
On-Chip Mid-Infrared and THz Frequency Combs for Spectroscopy
Appl. Phys. Lett. 87, 061101 (2005)
https://doi.org/10.1063/1.2008379
Seeded amplification of colored conical emission via spatiotemporal modulational instability
Appl. Phys. Lett. 87, 061102 (2005)
https://doi.org/10.1063/1.2009059
Photonic crystal with diamondlike structure fabricated by holographic lithography
Appl. Phys. Lett. 87, 061103 (2005)
https://doi.org/10.1063/1.2008357
Anisotropic thermal properties of monoclinic crystals
Jianxiu Zhang; Kunpeng Wang; Jiyang Wang; Huaijin Zhang; Wentao Yu; Xuping Wang; Zhengping Wang; Qingming Lu; Mingfang Ba; D. G. Ran; Z. C. Ling; H. R. Xia
Appl. Phys. Lett. 87, 061104 (2005)
https://doi.org/10.1063/1.2008360
Experimental demonstration of complete photonic band gap in two-dimensional photonic crystal slabs
Appl. Phys. Lett. 87, 061107 (2005)
https://doi.org/10.1063/1.2009060
Enhancement of terahertz radiation from photoconductors by elliptically focused excitation
Appl. Phys. Lett. 87, 061108 (2005)
https://doi.org/10.1063/1.2009080
Probe of the Si nanoclusters to energy transfer dynamics by double-pulse excitation
M. Falconieri; E. Borsella; L. De Dominicis; F. Enrichi; G. Franzò; F. Priolo; F. Iacona; F. Gourbilleau; R. Rizk
Appl. Phys. Lett. 87, 061109 (2005)
https://doi.org/10.1063/1.2001753
Highly efficient and bright electroluminescent device
Appl. Phys. Lett. 87, 061110 (2005)
https://doi.org/10.1063/1.2009079
Silicon membrane resonant-cavity-enhanced photodetector
Appl. Phys. Lett. 87, 061111 (2005)
https://doi.org/10.1063/1.2009822
Side-chain electro-optic polymer modulator with wide thermal stability ranging from for fiber-optic gyroscope applications
Seong-Ku Kim; Yu-Chueh Hung; Byoung-Joon Seo; K. Geary; W. Yuan; B. Bortnik; H. R. Fetterman; C. Wang; W. H. Steier; C. Zhang
Appl. Phys. Lett. 87, 061112 (2005)
https://doi.org/10.1063/1.2009807
PLASMAS AND ELECTRICAL DISCHARGES
Work function reduction of graphitic nanofibers by potassium intercalation
Appl. Phys. Lett. 87, 061501 (2005)
https://doi.org/10.1063/1.2009052
Transition from diffuse to filamentary domain in a microwave-induced surface discharge
Appl. Phys. Lett. 87, 061502 (2005)
https://doi.org/10.1063/1.2009068
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
Nb clusters formation in Nb-doped magnesium hydride
R. Checchetto; N. Bazzanella; A. Miotello; C. Maurizio; F. D’Acapito; P. Mengucci; G. Barucca; G. Majni
Appl. Phys. Lett. 87, 061904 (2005)
https://doi.org/10.1063/1.2007866
The role of Al on Ohmic contact formation on -type GaN and
Appl. Phys. Lett. 87, 061905 (2005)
https://doi.org/10.1063/1.2008361
Improved photoluminescence of quantum wells assisted by Sb surfactant and indium-graded intermediate layers
Appl. Phys. Lett. 87, 061908 (2005)
https://doi.org/10.1063/1.2009048
Surface relief grating formation on a single crystal of 4-(dimethylamino)azobenzene
Appl. Phys. Lett. 87, 061910 (2005)
https://doi.org/10.1063/1.2009065
Three-dimensional organization of rare-earth atoms at grain boundaries in silicon nitride
Graham B. Winkelman; Christian Dwyer; Toby S. Hudson; Duc Nguyen-Manh; Markus Döblinger; Raphaelle L. Satet; Michael J. Hoffmann; David J. H. Cockayne
Appl. Phys. Lett. 87, 061911 (2005)
https://doi.org/10.1063/1.2009067
Micro-x-ray absorption near-edge structure imaging for detecting metallic Mn in GaN
Appl. Phys. Lett. 87, 061913 (2005)
https://doi.org/10.1063/1.1989446
Conducting In-doped CdTe oxide thin films grown by pulsed-laser deposition
Appl. Phys. Lett. 87, 061916 (2005)
https://doi.org/10.1063/1.2005391
Bulk-like pentacene epitaxial films on hydrogen-terminated Si(111)
Toshihiro Shimada; Hiroyuki Nogawa; Tetsuya Hasegawa; Ryusuke Okada; Hisashi Ichikawa; Keiji Ueno; Koichiro Saiki
Appl. Phys. Lett. 87, 061917 (2005)
https://doi.org/10.1063/1.2008371
Atomic structure in metallic glass
Appl. Phys. Lett. 87, 061918 (2005)
https://doi.org/10.1063/1.2009827
: A high-performance thermoelectric bulk material with extremely low thermal conductivity
Appl. Phys. Lett. 87, 061919 (2005)
https://doi.org/10.1063/1.2009828
Determination of thermal and optical parameters of melanins by photopyroelectric spectroscopy
Appl. Phys. Lett. 87, 061920 (2005)
https://doi.org/10.1063/1.2009833
Rapid stress-driven grain coarsening in nanocrystalline Cu at ambient and cryogenic temperatures
Appl. Phys. Lett. 87, 061921 (2005)
https://doi.org/10.1063/1.2008377
Tunable uniaxial vs biaxial in-plane strain using compliant substrates
Appl. Phys. Lett. 87, 061922 (2005)
https://doi.org/10.1063/1.2006215
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
Friction transfer deposition of ordered conjugated polymer nanowires and transistor fabrication
Appl. Phys. Lett. 87, 062101 (2005)
https://doi.org/10.1063/1.2009063
Observation of hysteretic magnetoresistance in Mn-doped GaN nanowires with the mesoscopic Co and contacts
Appl. Phys. Lett. 87, 062102 (2005)
https://doi.org/10.1063/1.2009832
Two-dimensional electrons at a cleaved semiconductor surface: Observation of the quantum Hall effect
Appl. Phys. Lett. 87, 062103 (2005)
https://doi.org/10.1063/1.2009811
Assemblies of silicon nanoparticles roll up into flexible nanotubes
Appl. Phys. Lett. 87, 062104 (2005)
https://doi.org/10.1063/1.2009051
Negative- property of oxygen vacancy in cubic
Appl. Phys. Lett. 87, 062105 (2005)
https://doi.org/10.1063/1.2009826
Submicron periodic poling and chemical patterning of GaN
Appl. Phys. Lett. 87, 062106 (2005)
https://doi.org/10.1063/1.2009839
MAGNETISM AND SUPERCONDUCTIVITY
Magnetic property investigations on Mn-doped ZnO Layers on sapphire
A. Che Mofor; A. El-Shaer; A. Bakin; A. Waag; H. Ahlers; U. Siegner; S. Sievers; M. Albrecht; W. Schoch; N. Izyumskaya; V. Avrutin; S. Sorokin; S. Ivanov; J. Stoimenos
Appl. Phys. Lett. 87, 062501 (2005)
https://doi.org/10.1063/1.2007864
Spatially resolved observation of domain-wall propagation in a submicron ferromagnetic NOT-gate
Appl. Phys. Lett. 87, 062503 (2005)
https://doi.org/10.1063/1.2009050
Magnetic tuning of Fermi level for tunnel spintronics devices
Appl. Phys. Lett. 87, 062504 (2005)
https://doi.org/10.1063/1.2009049
Alignment and analyses of nanostructures
Appl. Phys. Lett. 87, 062505 (2005)
https://doi.org/10.1063/1.2008368
DIELECTRICS AND FERROELECTRICITY
Direct observation of a fully strained dead layer at interface
Appl. Phys. Lett. 87, 062901 (2005)
https://doi.org/10.1063/1.2008372
Nanoscale imaging of grain orientations and ferroelectric domains in films for ferroelectric memories
Appl. Phys. Lett. 87, 062902 (2005)
https://doi.org/10.1063/1.2009835
NANOSCALE SCIENCE AND DESIGN
Quantum dot strain engineering for light emission at 1.3, 1.4 and
Appl. Phys. Lett. 87, 063101 (2005)
https://doi.org/10.1063/1.2007860
Nucleation of diamond by pure carbon ion bombardment—a transmission electron microscopy study
Appl. Phys. Lett. 87, 063103 (2005)
https://doi.org/10.1063/1.2007869
Fast and reversible excited state absorption in II-VI-based nanocomposite thin films
Appl. Phys. Lett. 87, 063104 (2005)
https://doi.org/10.1063/1.2007871
Ultraviolet emission from layered nanocomposites of and sodium dodecyl sulfate prepared by laser ablation in liquid
Appl. Phys. Lett. 87, 063105 (2005)
https://doi.org/10.1063/1.2008373
Large-scale fabrication of boron nitride nanohorn
Appl. Phys. Lett. 87, 063107 (2005)
https://doi.org/10.1063/1.2009056
Mechanism of field-aided lateral crystallization of amorphous silicon
Appl. Phys. Lett. 87, 063108 (2005)
https://doi.org/10.1063/1.2009066
Template-free synthesis of helical hexagonal microtubes of indium nitride
Shudong Luo; Weiya Zhou; Wenxin Wang; Zengxing Zhang; Lifeng Liu; Xinyuan Dou; Jianxiong Wang; Xiaowei Zhao; Dongfang Liu; Yan Gao; Li Song; Yanjuan Xiang; Jianjun Zhou; Sishen Xie
Appl. Phys. Lett. 87, 063109 (2005)
https://doi.org/10.1063/1.2009841
Toward over unity proton sputtering yields from a hydrogen-terminated Si(111) surface irradiated by slow highly charged Xe ions
Satoshi Takahashi; Masahide Tona; Kazuo Nagata; Nobuyuki Nakamura; Nobuo Yoshiyasu; Chikashi Yamada; Shunsuke Ohtani; Makoto Sakurai
Appl. Phys. Lett. 87, 063111 (2005)
https://doi.org/10.1063/1.2009829
Improvement of field emission characteristics of carbon nanotubes through metal layer intermediation
Taewon Jeong; Jungna Heo; Jeonghee Lee; Sanghyun Lee; Wonseok Kim; Hyunjung Lee; Sanghyun Park; J. M. Kim; Taesik Oh; Chongwyun Park; Ji-Beom Yoo; Byoungyun Gong; Naesung Lee; SeGi Yu
Appl. Phys. Lett. 87, 063112 (2005)
https://doi.org/10.1063/1.2009055
DEVICE PHYSICS
Analytical on-state current model of polycrystalline silicon thin-film transistors including the kink effect
Appl. Phys. Lett. 87, 063501 (2005)
https://doi.org/10.1063/1.2007859
Ultrasound-modulated optical speckle measurement for scattering medium in a coaxial transmission system
Appl. Phys. Lett. 87, 063504 (2005)
https://doi.org/10.1063/1.2009058
Organic light-emitting devices with in situ postgrowth annealed organic layers
Appl. Phys. Lett. 87, 063505 (2005)
https://doi.org/10.1063/1.2009831
APPLIED BIOPHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS
Read-out of micromechanical cantilever sensors by phase shifting interferometry
Appl. Phys. Lett. 87, 064101 (2005)
https://doi.org/10.1063/1.2008358
Current-controlled lithography on conducting thin films by atomic force microscopy
Appl. Phys. Lett. 87, 064102 (2005)
https://doi.org/10.1063/1.2009054
Methods for the accurate analysis of channeling Rutherford backscattering spectrometry
Appl. Phys. Lett. 87, 064103 (2005)
https://doi.org/10.1063/1.2007861
COMMENTS
ERRATA
Erratum: “Precision cutting of nanotubes with a low-energy electron beam” [Appl. Phys. Lett. 86, 053109 (2005)]
Appl. Phys. Lett. 87, 069902 (2005)
https://doi.org/10.1063/1.2000345
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Superconducting flip-chip devices using indium microspheres on Au-passivated Nb or NbN as under-bump metallization layer
Achintya Paradkar, Paul Nicaise, et al.
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Shunsuke Ota, et al.