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25 July 2005
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
Light-induced resonant transmittance through a gold film
Appl. Phys. Lett. 87, 041101 (2005)
https://doi.org/10.1063/1.2001127
Mechanism of the temperature sensitivity of mid-infrared GaSb-based semiconductor lasers
S. Suchalkin; L. Shterengas; M. Kisin; S. Luryi; G. Belenky; R. Kaspi; A. Ongstad; J. G. Kim; R. U. Martinelli
Appl. Phys. Lett. 87, 041102 (2005)
https://doi.org/10.1063/1.2001132
Achieving resolution with a streak camera by reducing the deflection dispersion
Appl. Phys. Lett. 87, 041103 (2005)
https://doi.org/10.1063/1.2001732
High-power, room-temperature, and continuous-wave operation of distributed-feedback quantum-cascade lasers at
Appl. Phys. Lett. 87, 041104 (2005)
https://doi.org/10.1063/1.2000343
Infrared interband cascade light-emitting diode array with record high efficiency
Appl. Phys. Lett. 87, 041105 (2005)
https://doi.org/10.1063/1.2001759
Photomixers fabricated on nitrogen-ion-implanted GaAs
M. Mikulics; M. Marso; I. Cámara Mayorga; R. Güsten; S. Stanček; P. Kováč; S. Wu; Xia Li; M. Khafizov; R. Sobolewski; E. A. Michael; R. Schieder; M. Wolter; D. Buca; A. Förster; P. Kordoš; H. Lüth
Appl. Phys. Lett. 87, 041106 (2005)
https://doi.org/10.1063/1.2006983
Fully-screened polarization-induced electric fields in blue∕violet light-emitting devices grown on bulk GaN
G. Franssen; T. Suski; P. Perlin; R. Bohdan; A. Bercha; W. Trzeciakowski; I. Makarowa; P. Prystawko; M. Leszczyński; I. Grzegory; S. Porowski; S. Kokenyesi
Appl. Phys. Lett. 87, 041109 (2005)
https://doi.org/10.1063/1.2000331
Optical enhancement of diode laser-photoacoustic trace gas detection by means of external Fabry-Perot cavity
Appl. Phys. Lett. 87, 041110 (2005)
https://doi.org/10.1063/1.2000341
PLASMAS AND ELECTRICAL DISCHARGES
Feature of electron energy distribution in a low-pressure capacitive discharge
Appl. Phys. Lett. 87, 041501 (2005)
https://doi.org/10.1063/1.1928320
Extraction of a nearly monoenergetic ion beam using a pulsed plasma
Appl. Phys. Lett. 87, 041502 (2005)
https://doi.org/10.1063/1.2001129
Comparative study on emission characteristics of extreme ultraviolet radiation from and laser-produced tin plasmas
Appl. Phys. Lett. 87, 041503 (2005)
https://doi.org/10.1063/1.1989441
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
Segregation of nearest-neighbor donor-pair defects to interfaces
Appl. Phys. Lett. 87, 041903 (2005)
https://doi.org/10.1063/1.2001752
Combined synchrotron x-ray diffraction and wafer curvature measurements during Ni–Si reactive film formation
Appl. Phys. Lett. 87, 041904 (2005)
https://doi.org/10.1063/1.1999021
Raman studies of Ge-promoted stress modulation in 3C–SiC grown on Si(111)
Appl. Phys. Lett. 87, 041905 (2005)
https://doi.org/10.1063/1.1999858
Electronic structure of wurtzite quantum dots with cylindrical symmetry
Appl. Phys. Lett. 87, 041906 (2005)
https://doi.org/10.1063/1.2000329
Optical properties and carrier dynamics of two-dimensional electrons in single heterostructures
Ho-Sang Kwack; Yong-Hoon Cho; G. H. Kim; M. R. Park; D. H. Youn; S. B. Bae; K.-S. Lee; Jae-Hoon Lee; Jung-Hee Lee; T. W. Kim; T. W. Kang; Kang L. Wang
Appl. Phys. Lett. 87, 041909 (2005)
https://doi.org/10.1063/1.2000334
Ab initio study of the structural stability of compounds
Appl. Phys. Lett. 87, 041910 (2005)
https://doi.org/10.1063/1.2000340
Zone-axis diffraction study of pressure-induced inhomogeneity in single-crystal
Appl. Phys. Lett. 87, 041912 (2005)
https://doi.org/10.1063/1.1999016
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
Z-contrast imaging of AlN exclusion layers in GaN field-effect transistors
Appl. Phys. Lett. 87, 042101 (2005)
https://doi.org/10.1063/1.2001134
Wave-form sampling using a driven electron ratchet in a two-dimensional electron system
Appl. Phys. Lett. 87, 042104 (2005)
https://doi.org/10.1063/1.2001740
Fabrication of (Ga,Mn)N nanowires with room temperature ferromagnetism using nitrogen plasma
Appl. Phys. Lett. 87, 042105 (2005)
https://doi.org/10.1063/1.1999862
Thermoelectric properties of lanthanum sesquisulfide with Ti additive
Appl. Phys. Lett. 87, 042106 (2005)
https://doi.org/10.1063/1.1999845
Electrical characteristics of gate oxides formed by a plasma fluorination technique
Appl. Phys. Lett. 87, 042107 (2005)
https://doi.org/10.1063/1.1999844
Highly transparent and low resistance gallium-doped indium oxide contact to -type GaN
Appl. Phys. Lett. 87, 042109 (2005)
https://doi.org/10.1063/1.1999012
MAGNETISM AND SUPERCONDUCTIVITY
Low-frequency noise and tunneling magnetoresistance in epitaxial magnetic tunnel junctions
R. Guerrero; F. G. Aliev; R. Villar; J. Hauch; M. Fraune; G. Güntherodt; K. Rott; H. Brückl; G. Reiss
Appl. Phys. Lett. 87, 042501 (2005)
https://doi.org/10.1063/1.2001128
Avalanche-driven fractal flux distributions in NbN superconducting films
Appl. Phys. Lett. 87, 042502 (2005)
https://doi.org/10.1063/1.1992673
Increases in the irreversibility field and the upper critical field of bulk by addition
Appl. Phys. Lett. 87, 042505 (2005)
https://doi.org/10.1063/1.2001736
Interface magnetization profiling by x-ray magnetometry of marker impurities on
L. Giovanelli; G. Panaccione; G. Rossi; M. Fabrizioli; C. S. Tian; P. L. Gastelois; J. Fujii; C. H. Back
Appl. Phys. Lett. 87, 042506 (2005)
https://doi.org/10.1063/1.1995949
Effects of temperature and atmosphere on the magnetism properties of Mn-doped ZnO
Appl. Phys. Lett. 87, 042507 (2005)
https://doi.org/10.1063/1.1952570
Re-entrant spin glass behavior in Mn-rich
W. R. Chen; F. C. Zhang; J. Miao; B. Xu; X. L. Dong; L. X. Cao; X. G. Qiu; B. R. Zhao; Pengcheng Dai
Appl. Phys. Lett. 87, 042508 (2005)
https://doi.org/10.1063/1.1991980
Tuning of the metal-insulator transition in superlattices
Appl. Phys. Lett. 87, 042509 (2005)
https://doi.org/10.1063/1.1995944
DIELECTRICS AND FERROELECTRICITY
Low-field magnetodielectric effect in terbium iron garnets
Appl. Phys. Lett. 87, 042901 (2005)
https://doi.org/10.1063/1.1997272
Chemical states and electronic structure of a interface
Appl. Phys. Lett. 87, 042902 (2005)
https://doi.org/10.1063/1.2006211
Carbon nanotube composites with high dielectric constant at low percolation threshold
Appl. Phys. Lett. 87, 042903 (2005)
https://doi.org/10.1063/1.1996842
Temperature-dependent fatigue behaviors of ferroelectric and thin films
Appl. Phys. Lett. 87, 042904 (2005)
https://doi.org/10.1063/1.1977186
Mobility evaluation in transistors with charge-trapping gate dielectrics
Appl. Phys. Lett. 87, 042905 (2005)
https://doi.org/10.1063/1.1995956
NANOSCALE SCIENCE AND DESIGN
Theoretical investigation of surface roughness scattering in silicon nanowire transistors
Appl. Phys. Lett. 87, 043101 (2005)
https://doi.org/10.1063/1.2001158
Asymmetric quantum-confined Stark effects of hierarchical self-assembly of quantum dots
Appl. Phys. Lett. 87, 043102 (2005)
https://doi.org/10.1063/1.2001131
200 mm wafer-scale substrate transfer of (Black Diamond™) dual-damascene interconnection to glass substrates
Appl. Phys. Lett. 87, 043103 (2005)
https://doi.org/10.1063/1.1997269
Hydrogen-assisted stabilization of Ni nanowires in solution
Appl. Phys. Lett. 87, 043104 (2005)
https://doi.org/10.1063/1.2001142
Fe-catalytic growth of ZnSe nanowires on a ZnSe(001) surface at low temperatures by molecular-beam epitaxy
Appl. Phys. Lett. 87, 043105 (2005)
https://doi.org/10.1063/1.1997275
Exciton radiative recombination in spherical quantum-well nanostructures
Appl. Phys. Lett. 87, 043107 (2005)
https://doi.org/10.1063/1.2001731
Carbon nanotube-based nonvolatile memory with charge storage in metal nanocrystals
Appl. Phys. Lett. 87, 043108 (2005)
https://doi.org/10.1063/1.1999014
Multiple implantations into Si: Influence of the implantation sequence on ion range profiles
Appl. Phys. Lett. 87, 043109 (2005)
https://doi.org/10.1063/1.2005388
Reversible surface functionalization of carbon nanotubes for fabrication of field-effect transistors
Appl. Phys. Lett. 87, 043110 (2005)
https://doi.org/10.1063/1.2005393
Near-field scanning photocurrent microscopy of a nanowire photodetector
Appl. Phys. Lett. 87, 043111 (2005)
https://doi.org/10.1063/1.1996851
Local density of states mapping of a field-induced quantum dot by near-field photoluminescence microscopy
Appl. Phys. Lett. 87, 043112 (2005)
https://doi.org/10.1063/1.1984095
Room-temperature ferromagnetism in nanoparticle assembled nanotubes
Appl. Phys. Lett. 87, 043113 (2005)
https://doi.org/10.1063/1.1999842
DEVICE PHYSICS
Aluminum gallium nitride ultraviolet photodiodes with buried -layer structure
Appl. Phys. Lett. 87, 043501 (2005)
https://doi.org/10.1063/1.2001162
Alternate operating mode for long wavelength blocked impurity band detectors
Appl. Phys. Lett. 87, 043502 (2005)
https://doi.org/10.1063/1.1999022
Very wide bandwidth hot electron bolometer heterodyne detectors based on single-walled carbon nanotubes
Appl. Phys. Lett. 87, 043503 (2005)
https://doi.org/10.1063/1.2000330
Performances and limitations of metamorphic heterostructures on InP for high mobility devices
Appl. Phys. Lett. 87, 043504 (2005)
https://doi.org/10.1063/1.2000338
Real-space electron transfer in III-nitride metal-oxide-semiconductor-heterojunction structures
S. Saygi; A. Koudymov; V. Adivarahan; J. Yang; G. Simin; M. Asif Khan; J. Deng; R. Gaska; M. S. Shur
Appl. Phys. Lett. 87, 043505 (2005)
https://doi.org/10.1063/1.2001745
Polymer light-emitting electrochemical cells: Frozen-junction operation of an “ionic liquid” device
Appl. Phys. Lett. 87, 043506 (2005)
https://doi.org/10.1063/1.1999009
Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry
E. Forsen; G. Abadal; S. Ghatnekar-Nilsson; J. Teva; J. Verd; R. Sandberg; W. Svendsen; F. Perez-Murano; J. Esteve; E. Figueras; F. Campabadal; L. Montelius; N. Barniol; A. Boisen
Appl. Phys. Lett. 87, 043507 (2005)
https://doi.org/10.1063/1.1999838
White organic light-emitting devices with a solution-processed and molecular host-employed emission layer
Appl. Phys. Lett. 87, 043508 (2005)
https://doi.org/10.1063/1.1991997
Low-voltage ZnO thin-film transistors with high- gate insulator for transparent and flexible electronics
Appl. Phys. Lett. 87, 043509 (2005)
https://doi.org/10.1063/1.1993762
APPLIED BIOPHYSICS
Rupture force measurement of biotin-streptavidin bonds using optical trapping
Appl. Phys. Lett. 87, 043901 (2005)
https://doi.org/10.1063/1.1999855
INTERDISCIPLINARY AND GENERAL PHYSICS
Quantifying the effect of metal-rich precipitates on minority carrier diffusion length in multicrystalline silicon using synchrotron-based spectrally resolved x-ray beam-induced current
T. Buonassisi; A. A. Istratov; M. D. Pickett; M. A. Marcus; G. Hahn; S. Riepe; J. Isenberg; W. Warta; G. Willeke; T. F. Ciszek; E. R. Weber
Appl. Phys. Lett. 87, 044101 (2005)
https://doi.org/10.1063/1.1997274
Quantitative determination of the clustered silicon concentration in substoichiometric silicon oxide layer
Appl. Phys. Lett. 87, 044102 (2005)
https://doi.org/10.1063/1.1999839
Many-body optical gain and intraband relaxation time of wurtzite quantum-well lasers and comparison with experiment
Appl. Phys. Lett. 87, 044103 (2005)
https://doi.org/10.1063/1.2001744
Metal-induced photoluminescence quenching of tri-(8-hydroxyquinoline) aluminum
Y. Wu; Y. C. Zhou; H. R. Wu; Y. Q. Zhan; J. Zhou; S. T. Zhang; J. M. Zhao; Z. J. Wang; X. M. Ding; X. Y. Hou
Appl. Phys. Lett. 87, 044104 (2005)
https://doi.org/10.1063/1.1991985
ERRATA
Erratum: “A naturally-occurring, optically-driven, cellular rotor” [Appl. Phys. Lett. 85, 6048 (2004)]
Appl. Phys. Lett. 87, 049901 (2005)
https://doi.org/10.1063/1.1994931
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Superconducting flip-chip devices using indium microspheres on Au-passivated Nb or NbN as under-bump metallization layer
Achintya Paradkar, Paul Nicaise, et al.
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Shunsuke Ota, et al.