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LASERS, OPTICS, AND OPTOELECTRONICS

Spectral dependencies of terahertz emission from InAs and InSb

R. Adomavičius; G. Molis; A. Krotkus; V. Sirutkaitis

Appl. Phys. Lett. 87, 261101 (2005) https://doi.org/10.1063/1.2143111

Abstract

View articletitled, Spectral dependencies of terahertz emission from InAs and InSb

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Neutral ion-implantation-induced selective quantum-dot intermixing

H. S. Djie; B. S. Ooi; V. Aimez

Appl. Phys. Lett. 87, 261102 (2005) https://doi.org/10.1063/1.2150279

Abstract

View articletitled, Neutral ion-implantation-induced selective quantum-dot intermixing

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High-efficiency red light-emitting diodes based on polyfluorene copolymers with extremely low content of 4,7-di-2-thienyl-2,1,3-benzothiadiazole-comparative studies of intrachain and interchain interaction

Jie Luo; Junbiao Peng; Yong Cao; Qiong Hou

Appl. Phys. Lett. 87, 261103 (2005) https://doi.org/10.1063/1.2150251

Abstract

View articletitled, High-efficiency red light-emitting diodes based on polyfluorene copolymers with extremely low content of 4,7-di-2-thienyl-2,1,3-benzothiadiazole-comparative studies of intrachain and interchain interaction

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Signal processing by opto-optical interactions between self-localized and free propagating beams in liquid crystals

Alessia Pasquazi; Alessandro Alberucci; Marco Peccianti; Gaetano Assanto

Appl. Phys. Lett. 87, 261104 (2005) https://doi.org/10.1063/1.2158026

Abstract

View articletitled, Signal processing by opto-optical interactions between self-localized and free propagating beams in liquid crystals

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Optical Tamm states for the fabrication of polariton lasers

Alexey Kavokin; Ivan Shelykh; Guillaume Malpuech

Appl. Phys. Lett. 87, 261105 (2005) https://doi.org/10.1063/1.2136414

Abstract

View articletitled, Optical Tamm states for the fabrication of polariton lasers

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Short-period $In As ∕ Ga Sb$ type-II superlattices for mid-infrared detectors

H. J. Haugan; F. Szmulowicz; K. Mahalingam; G. J. Brown; S. R Munshi; B. Ullrich

Appl. Phys. Lett. 87, 261106 (2005) https://doi.org/10.1063/1.2150269

Abstract

View articletitled, Short-period <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">In</mi><mi mathvariant="normal">As</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">Sb</mi></mrow></math> type-II superlattices for mid-infrared detectors

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Metal-wire terahertz time-domain spectroscopy

Markus Walther; Mark R. Freeman; Frank A. Hegmann

Appl. Phys. Lett. 87, 261107 (2005) https://doi.org/10.1063/1.2158025

Abstract

View articletitled, Metal-wire terahertz time-domain spectroscopy

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Limitations of active carrier removal in silicon Raman amplifiers and lasers

D. Dimitropoulos; S. Fathpour; B. Jalali

Appl. Phys. Lett. 87, 261108 (2005) https://doi.org/10.1063/1.2155071

Abstract

View articletitled, Limitations of active carrier removal in silicon Raman amplifiers and lasers

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Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range

C. Schlichenmaier; A. Thränhardt; T. Meier; S. W. Koch; W. W. Chow; J. Hader; J. V. Moloney

Appl. Phys. Lett. 87, 261109 (2005) https://doi.org/10.1063/1.2149371

Abstract

View articletitled, Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range

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A “standing-wave meter” to measure dispersion and loss of photonic-crystal waveguides

R. Wüest; D. Erni; P. Strasser; F. Robin; H. Jäckel; B. C. Buchler; A. F. Koenderink; V. Sandoghdar; R. Harbers

Appl. Phys. Lett. 87, 261110 (2005) https://doi.org/10.1063/1.2151254

Abstract

View articletitled, A “standing-wave meter” to measure dispersion and loss of photonic-crystal waveguides

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Photorefractive properties of an unsensitized polymer composite based on a dicyanostyrene derivative as nonlinear optical chromophore

José A. Quintana; Pedro G. Boj; José M. Villalvilla; Javier Ortíz; Fernando Fernández-Lázaro; Ángela Sastre-Santos; María A. Díaz-García

Appl. Phys. Lett. 87, 261111 (2005) https://doi.org/10.1063/1.2158032

Abstract

View articletitled, Photorefractive properties of an unsensitized polymer composite based on a dicyanostyrene derivative as nonlinear optical chromophore

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Generation of terahertz radiation using zinc oxide as photoconductive material excited by ultraviolet pulses

Shingo Ono; Hidetoshi Murakami; Alex Quema; Gilbert Diwa; Nobuhiko Sarukura; Ryujiro Nagasaka; Yo Ichikawa; Hiraku Ogino; Eriko Ohshima; Akira Yoshikawa; Tsuguo Fukuda

Appl. Phys. Lett. 87, 261112 (2005) https://doi.org/10.1063/1.2158514

Abstract

View articletitled, Generation of terahertz radiation using zinc oxide as photoconductive material excited by ultraviolet pulses

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Electronic anti-Stokes–Raman emission in quantum-cascade lasers

A. Gomez-Iglesias; D. Wasserman; C. Gmachl; A. Belyanin; D. L. Sivco

Appl. Phys. Lett. 87, 261113 (2005) https://doi.org/10.1063/1.2150585

Abstract

View articletitled, Electronic anti-Stokes–Raman emission in quantum-cascade lasers

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Two-dimensionally localized modes of a nanoscale gap plasmon waveguide

D. F. P. Pile; T. Ogawa; D. K. Gramotnev; Y. Matsuzaki; K. C. Vernon; K. Yamaguchi; T. Okamoto; M. Haraguchi; M. Fukui

Appl. Phys. Lett. 87, 261114 (2005) https://doi.org/10.1063/1.2149971

Abstract

View articletitled, Two-dimensionally localized modes of a nanoscale gap plasmon waveguide

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Electronic electrooptic phase modulation using bent-core liquid crystals

Malcolm Rickard; Michi Nakata; Hideo Takezoe; Junji Watanabe; Noel A. Clark

Appl. Phys. Lett. 87, 261115 (2005) https://doi.org/10.1063/1.2149152

Abstract

View articletitled, Electronic electrooptic phase modulation using bent-core liquid crystals

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PLASMAS AND ELECTRICAL DISCHARGES

Longitudinal profiles of plasma parameters in a laser-ignited capillary discharge and implications for laser wakefield accelerator applications

M. Levin; A. Pukhov; R. F. Hubbard; D. Kaganovich; D. F. Gordon; P. Sprangle; A. Ting; B. Hafizi; A. Zigler

Appl. Phys. Lett. 87, 261501 (2005) https://doi.org/10.1063/1.2149183

Abstract

View articletitled, Longitudinal profiles of plasma parameters in a laser-ignited capillary discharge and implications for laser wakefield accelerator applications

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Dielectric barrier hollow cathode discharge and its enhanced performance for light source

Tae Il Lee; Ki Wan Park; Hong Koo Baik; Seong-Min Lee

Appl. Phys. Lett. 87, 261502 (2005) https://doi.org/10.1063/1.2150274

Abstract

View articletitled, Dielectric barrier hollow cathode discharge and its enhanced performance for light source

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Efficiency improvement in thin-film solar cell devices with oxygen-containing absorber layer

M. Emziane; K. Durose; D. P. Halliday; A. Bosio; N. Romeo

Appl. Phys. Lett. 87, 261901 (2005) https://doi.org/10.1063/1.2152108

Abstract

View articletitled, Efficiency improvement in thin-film solar cell devices with oxygen-containing absorber layer

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Giant negative thermal expansion in Ge-doped anti-perovskite manganese nitrides

K. Takenaka; H. Takagi

Appl. Phys. Lett. 87, 261902 (2005) https://doi.org/10.1063/1.2147726

Abstract

View articletitled, Giant negative thermal expansion in Ge-doped anti-perovskite manganese nitrides

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Role of structural defects on exchange bias in the epitaxial $Co O ∕ Co$ system

M. R. Ghadimi; B. Beschoten; G. Güntherodt

Appl. Phys. Lett. 87, 261903 (2005) https://doi.org/10.1063/1.2152111

Abstract

View articletitled, Role of structural defects on exchange bias in the epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Co</mi><mi mathvariant="normal">O</mi><mo>∕</mo><mi mathvariant="normal">Co</mi></mrow></math> system

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Silicon waveguides produced by wafer bonding

M. Poulsen; F. Jensen; O. Bunk; R. Feidenhans’l; D. W. Breiby

Appl. Phys. Lett. 87, 261904 (2005) https://doi.org/10.1063/1.2158028

Abstract

View articletitled, Silicon waveguides produced by wafer bonding

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One-dimensional $Au ∕ Si$ heterojunction-microstructure and phase evolution under electron beam irradiation

Quan Li; Yang Jiao

Appl. Phys. Lett. 87, 261905 (2005) https://doi.org/10.1063/1.2158029

Abstract

View articletitled, One-dimensional <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Au</mi><mo>∕</mo><mi mathvariant="normal">Si</mi></mrow></math> heterojunction-microstructure and phase evolution under electron beam irradiation

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Confinement of electromigration induced void propagation in Cu interconnect by a buried Ta diffusion barrier layer

M. Y. Yan; K. N. Tu; A. V. Vairagar; S. G. Mhaisalkar; Ahila Krishnamoorthy

Appl. Phys. Lett. 87, 261906 (2005) https://doi.org/10.1063/1.2158030

Abstract

View articletitled, Confinement of electromigration induced void propagation in Cu interconnect by a buried Ta diffusion barrier layer

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Verification of the O–Si–N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films

Sudipto Naskar; Scott D. Wolter; Christopher A. Bower; Brian R. Stoner; Jeffrey T. Glass

Appl. Phys. Lett. 87, 261907 (2005) https://doi.org/10.1063/1.2158022

Abstract

View articletitled, Verification of the O–Si–N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films

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Phase stability of the intermetallic $L 2_{1}$ Heusler alloys of $A_{2} ({Hf}_{1 - x} {Zr}_{x}) Al$ (where $A = Pd$ and Pt) for an Nb-based high-temperature materials design

Miyoung Kim; A. J. Freeman; Sungtae Kim; J. H. Perepezko; G. B. Olson

Appl. Phys. Lett. 87, 261908 (2005) https://doi.org/10.1063/1.2136223

Abstract

View articletitled, Phase stability of the intermetallic <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">L</mi><msub><mn>2</mn><mn>1</mn></msub></mrow></math> Heusler alloys of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>A</mi><mn>2</mn></msub><mrow><mo>(</mo><msub><mi>Hf</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mi>Zr</mi><mi>x</mi></msub><mo>)</mo></mrow><mi>Al</mi></mrow></math> (where <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>A</mi><mo>=</mo><mi>Pd</mi></mrow></math> and Pt) for an Nb-based high-temperature materials design

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Generation of single color centers by focused nitrogen implantation

J. Meijer; B. Burchard; M. Domhan; C. Wittmann; T. Gaebel; I. Popa; F. Jelezko; J. Wrachtrup

Appl. Phys. Lett. 87, 261909 (2005) https://doi.org/10.1063/1.2103389

Abstract

View articletitled, Generation of single color centers by focused nitrogen implantation

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Correlating elasticity and cleavage

P. Lazar; R. Podloucky; W. Wolf

Appl. Phys. Lett. 87, 261910 (2005) https://doi.org/10.1063/1.2149988

Abstract

View articletitled, Correlating elasticity and cleavage

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Atomistic analysis of the mechanism of hydrogen diffusion in plasma-deposited amorphous silicon thin films

Mayur S. Valipa; Dimitrios Maroudas

Appl. Phys. Lett. 87, 261911 (2005) https://doi.org/10.1063/1.2158033

Abstract

View articletitled, Atomistic analysis of the mechanism of hydrogen diffusion in plasma-deposited amorphous silicon thin films

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Acoustic channel drop tunneling in a phononic crystal

Y. Pennec; B. Djafari-Rouhani; J. O. Vasseur; H. Larabi; A. Khelif; A. Choujaa; S. Benchabane; V. Laude

Appl. Phys. Lett. 87, 261912 (2005) https://doi.org/10.1063/1.2158019

Abstract

View articletitled, Acoustic channel drop tunneling in a phononic crystal

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Etching silicon wafer without hydrofluoric acid

Hong Liu; Zhong Lin Wang

Appl. Phys. Lett. 87, 261913 (2005) https://doi.org/10.1063/1.2158021

Abstract

View articletitled, Etching silicon wafer without hydrofluoric acid

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Structural and optical properties of InAs quantum dots regrown on atomic hydrogen-cleaned GaAs surface

Jong Su Kim; Mitsuo Kawabe; Nobuyki Koguchi; Dong-Yul Lee; Jin Soo Kim; In-Ho Bae

Appl. Phys. Lett. 87, 261914 (2005) https://doi.org/10.1063/1.2150582

Abstract

View articletitled, Structural and optical properties of InAs quantum dots regrown on atomic hydrogen-cleaned GaAs surface

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Optical characterization of GaN by $N^{+}$ implantation into GaAs at elevated temperature

S. Dhara; P. Magudapathy; R. Kesavamoorthy; S. Kalavathi; K. G. M. Nair; G. M. Hsu; L. C. Chen; K. H. Chen; K. Santhakumar; T. Soga

Appl. Phys. Lett. 87, 261915 (2005) https://doi.org/10.1063/1.2099542

Abstract

View articletitled, Optical characterization of GaN by <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">N</mi><mo>+</mo></msup></math> implantation into GaAs at elevated temperature

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Structural transitions in ${NaBH}_{4}$ under pressure

Ravhi S. Kumar; Andrew L. Cornelius

Appl. Phys. Lett. 87, 261916 (2005) https://doi.org/10.1063/1.2158505

Abstract

View articletitled, Structural transitions in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>NaBH</mi><mn>4</mn></msub></mrow></math> under pressure

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Low-threshold amplified spontaneous emission in thin films of poly(tetraarylindenofluorene)

Frédéric Laquai; Panagiotis E. Keivanidis; Stanislav Baluschev; Josemon Jacob; Klaus Müllen; Gerhard Wegner

Appl. Phys. Lett. 87, 261917 (2005) https://doi.org/10.1063/1.2158508

Abstract

View articletitled, Low-threshold amplified spontaneous emission in thin films of poly(tetraarylindenofluorene)

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Mechanical properties of a bulk ${Cu}_{0.5} Ni Al Co Cr Fe Si$ glassy alloy in $288 ° C$ high-purity water

Y. Y. Chen; U. T. Hong; J. W. Yeh; H. C. Shih

Appl. Phys. Lett. 87, 261918 (2005) https://doi.org/10.1063/1.2159090

Abstract

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Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si–Ge nanostructures

R. Marchetti; F. Montalenti; Leo Miglio; G. Capellini; M. De Seta; F. Evangelisti

Appl. Phys. Lett. 87, 261919 (2005) https://doi.org/10.1063/1.2151250

Abstract

View articletitled, Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si–Ge nanostructures

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Kinetics of irradiation-induced Cu precipitation in nuclear reactor pressure vessel steels

Y. Nagai; T. Toyama; Y. Nishiyama; M. Suzuki; Z. Tang; M. Hasegawa

Appl. Phys. Lett. 87, 261920 (2005) https://doi.org/10.1063/1.2159091

Abstract

View articletitled, Kinetics of irradiation-induced Cu precipitation in nuclear reactor pressure vessel steels

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Broadband omnidirectional reflection from negative index materials

Mark Bloemer; Giuseppe D’Aguanno; Michael Scalora; Nadia Mattiucci

Appl. Phys. Lett. 87, 261921 (2005) https://doi.org/10.1063/1.2151251

Abstract

View articletitled, Broadband omnidirectional reflection from negative index materials

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Electrochemical preparation of a stable accumulation layer on Si: A synchrotron radiation photoelectron spectroscopy study

K. Skorupska; M. Lublow; M. Kanis; H. Jungblut; H. J. Lewerenz

Appl. Phys. Lett. 87, 262101 (2005) https://doi.org/10.1063/1.2150267

Abstract

View articletitled, Electrochemical preparation of a stable accumulation layer on Si: A synchrotron radiation photoelectron spectroscopy study

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Dielectric properties of ultrathin $Si O_{2}$ slabs

N. Shi; R. Ramprasad

Appl. Phys. Lett. 87, 262102 (2005) https://doi.org/10.1063/1.2150584

Abstract

View articletitled, Dielectric properties of ultrathin <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> slabs

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Carrier dynamics in laterally strain-modulated InGaAs quantum wells

Vadim Talalaev; Jens W. Tomm; Thomas Elsaesser; Ute Zeimer; Jörg Fricke; Arne Knauer; Heiko Kissel; Markus Weyers; Georgiy G. Tarasov; J. Grenzer; U. Pietsch

Appl. Phys. Lett. 87, 262103 (2005) https://doi.org/10.1063/1.2151248

Abstract

View articletitled, Carrier dynamics in laterally strain-modulated InGaAs quantum wells

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Investigation of silicon-germanium fins fabricated using germanium condensation on vertical compliant structures

Tsung-Yang Liow; Kian-Ming Tan; Yee-Chia Yeo; Ajay Agarwal; Anyan Du; Chih-Hang Tung; Narayanan Balasubramanian

Appl. Phys. Lett. 87, 262104 (2005) https://doi.org/10.1063/1.2151257

Abstract

View articletitled, Investigation of silicon-germanium fins fabricated using germanium condensation on vertical compliant structures

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Local $p$ -type conductivity in zinc oxide dual-doped with nitrogen and arsenic

A. Krtschil; A. Dadgar; N. Oleynik; J. Bläsing; A. Diez; A. Krost

Appl. Phys. Lett. 87, 262105 (2005) https://doi.org/10.1063/1.2149171

Abstract

View articletitled, Local <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-type conductivity in zinc oxide dual-doped with nitrogen and arsenic

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Demonstration of Rashba spin splitting in GaN-based heterostructures

W. Weber; S. D. Ganichev; S. N. Danilov; D. Weiss; W. Prettl; Z. D. Kvon; V. V. Bel’kov; L. E. Golub; Hyun-Ick Cho; Jung-Hee Lee

Appl. Phys. Lett. 87, 262106 (2005) https://doi.org/10.1063/1.2158024

Abstract

View articletitled, Demonstration of Rashba spin splitting in GaN-based heterostructures

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Surface conductive layers on oxidized (111) diamonds

Sung-Gi Ri; Daisuke Takeuchi; Hiromitsu Kato; Masahiko Ogura; Toshiharu Makino; Satoshi Yamasaki; Hideyo Okushi; Bohuslav Rezek; Christoph E. Nebel

Appl. Phys. Lett. 87, 262107 (2005) https://doi.org/10.1063/1.2158020

Abstract

View articletitled, Surface conductive layers on oxidized (111) diamonds

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Fast-forming boron-oxygen-related recombination center in crystalline silicon

Karsten Bothe; Jan Schmidt

Appl. Phys. Lett. 87, 262108 (2005) https://doi.org/10.1063/1.2147727

Abstract

View articletitled, Fast-forming boron-oxygen-related recombination center in crystalline silicon

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Effect of strain on $p$ -channel metal-oxide-semiconductor field-effect-transistor current enhancement using stress-modulated silicon nitride films

Cha-Hsin Lin; Zingway Pei; Siddheswar Maikap; Ching-Chiun Wang; Ching-Sen Lu; Lurng-Shehng Lee; Ming-Jinn Tsai; Yi-Jen Chan

Appl. Phys. Lett. 87, 262109 (2005) https://doi.org/10.1063/1.2149987

Abstract

View articletitled, Effect of strain on <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-channel metal-oxide-semiconductor field-effect-transistor current enhancement using stress-modulated silicon nitride films

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Elliptically polarized absorption spectroscopy and observation of spin coherence in intrinsic GaAs

Tianshu Lai; Xiaodong Liu; Haihong Xu; Zhongxing Jiao; Liang Lei; Jinhui Wen; Weizhu Lin

Appl. Phys. Lett. 87, 262110 (2005) https://doi.org/10.1063/1.2150276

Abstract

View articletitled, Elliptically polarized absorption spectroscopy and observation of spin coherence in intrinsic GaAs

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Noninterfacial-nitride formation ohmic contact mechanism in Si-containing $Ti ∕ Al ∕ Mo ∕ Au$ metallizations on $Al Ga N ∕ Ga N$ heterostructures

Fitih M. Mohammed; Liang Wang; Ilesanmi Adesida

Appl. Phys. Lett. 87, 262111 (2005) https://doi.org/10.1063/1.2149968

Abstract

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Impact of N-induced potential fluctuations on the electron transport in Ga(As,N)

F. Ishikawa; G. Mussler; K.-J. Friedland; H. Kostial; K. Hagenstein; L. Däweritz; K. H. Ploog

Appl. Phys. Lett. 87, 262112 (2005) https://doi.org/10.1063/1.2158511

Abstract

View articletitled, Impact of N-induced potential fluctuations on the electron transport in Ga(As,N)

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Avalanche breakdown and breakdown luminescence of AlGaN multiquantum wells

S. K. Zhang; W. B. Wang; A. M. Dabiran; A. Osinsky; A. M. Wowchak; B. Hertog; C. Plaut; P. P. Chow; S. Gundry; E. O. Troudt; R. R. Alfano

Appl. Phys. Lett. 87, 262113 (2005) https://doi.org/10.1063/1.2158489

Abstract

View articletitled, Avalanche breakdown and breakdown luminescence of AlGaN multiquantum wells

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Inelastic mean-free path of electrons at nanocrystalline diamond surfaces

J. Zemek; J. Potmesil; M. Vanecek; B. Lesiak; A. Jablonski

Appl. Phys. Lett. 87, 262114 (2005) https://doi.org/10.1063/1.2159575

Abstract

View articletitled, Inelastic mean-free path of electrons at nanocrystalline diamond surfaces

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Approach for investigating lateral conduction in self-assembled monolayers

Srivardhan Gowda; Guru Mathur; Qiliang Li; Shyam Surthi; Veena Misra

Appl. Phys. Lett. 87, 262115 (2005) https://doi.org/10.1063/1.2152112

Abstract

View articletitled, Approach for investigating lateral conduction in self-assembled monolayers

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MAGNETISM AND SUPERCONDUCTIVITY

Observation of injection and pinning of domain walls in magnetic nanowires using photoemission electron microscopy

Luc Thomas; Charles Rettner; Masamitsu Hayashi; Mahesh G. Samant; Stuart S. P. Parkin; Andrew Doran; Andreas Scholl

Appl. Phys. Lett. 87, 262501 (2005) https://doi.org/10.1063/1.2139842

Abstract

View articletitled, Observation of injection and pinning of domain walls in magnetic nanowires using photoemission electron microscopy

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Voltage-controlled epitaxial strain in ${La}_{0.7} {Sr}_{0.3} {MnO}_{3} ∕ Pb ({Mg}_{1 ∕ 3} {Nb}_{2 ∕ 3}) O_{3} - {PbTiO}_{3} (001)$ films

C. Thiele; K. Dörr; S. Fähler; L. Schultz; D. C. Meyer; A. A. Levin; P. Paufler

Appl. Phys. Lett. 87, 262502 (2005) https://doi.org/10.1063/1.2150273

Abstract

View articletitled, Voltage-controlled epitaxial strain in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>La</mi><mn>0.7</mn></msub><msub><mi>Sr</mi><mn>0.3</mn></msub><msub><mi>MnO</mi><mn>3</mn></msub><mo>∕</mo><mi>Pb</mi><mrow><mo>(</mo><msub><mi>Mg</mi><mrow><mn>1</mn><mo>∕</mo><mn>3</mn></mrow></msub><msub><mi>Nb</mi><mrow><mn>2</mn><mo>∕</mo><mn>3</mn></mrow></msub><mo>)</mo></mrow><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub><mtext>-</mtext><msub><mi>PbTiO</mi><mn>3</mn></msub><mrow><mo>(</mo><mn>001</mn><mo>)</mo></mrow></mrow></math> films

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Temperature independence of the spin-injection efficiency of a MgO-based tunnel spin injector

G. Salis; R. Wang; X. Jiang; R. M. Shelby; S. S. P. Parkin; S. R. Bank; J. S. Harris

Appl. Phys. Lett. 87, 262503 (2005) https://doi.org/10.1063/1.2149369

Abstract

View articletitled, Temperature independence of the spin-injection efficiency of a MgO-based tunnel spin injector

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Martensitic transformation and shape memory effect in a ferromagnetic shape memory alloy: ${Mn}_{2} NiGa$

G. D. Liu; J. L. Chen; Z. H. Liu; X. F. Dai; G. H. Wu; B. Zhang; X. X. Zhang

Appl. Phys. Lett. 87, 262504 (2005) https://doi.org/10.1063/1.2158507

Abstract

View articletitled, Martensitic transformation and shape memory effect in a ferromagnetic shape memory alloy: <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>Mn</mi><mn>2</mn></msub><mi>NiGa</mi></mrow></math>

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Fabrication, structure, magnetic properties of highly ordered cobalt disulfide nanowire arrays

G. H. Yue; P. X. Yan; J. Z. Liu; X. Y. Fan; R. F. Zhuo

Appl. Phys. Lett. 87, 262505 (2005) https://doi.org/10.1063/1.2158521

Abstract

View articletitled, Fabrication, structure, magnetic properties of highly ordered cobalt disulfide nanowire arrays

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Onset of percolation and the temperature dependence of the persistent critical current in ${YBa}_{2} {Cu}_{3} O_{7 - δ}$ films

J. Jung; K. H. Chow; M. Egilmez; A. Welsh

Appl. Phys. Lett. 87, 262506 (2005) https://doi.org/10.1063/1.2158522

Abstract

View articletitled, Onset of percolation and the temperature dependence of the persistent critical current in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>YBa</mi><mn>2</mn></msub><msub><mi>Cu</mi><mn>3</mn></msub><msub><mi mathvariant="normal">O</mi><mrow><mn>7</mn><mo>−</mo><mi>δ</mi></mrow></msub></mrow></math> films

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Resistance steps and large magnetoresistive effect in ${La}_{0.67} {Sr}_{0.33} {MnO}_{3}$ nanoconstriction array

H. J. Liu; C. K. Ong

Appl. Phys. Lett. 87, 262507 (2005) https://doi.org/10.1063/1.2158525

Abstract

View articletitled, Resistance steps and large magnetoresistive effect in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>La</mi><mn>0.67</mn></msub><msub><mi>Sr</mi><mn>0.33</mn></msub><msub><mi>MnO</mi><mn>3</mn></msub></mrow></math> nanoconstriction array

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Magnetostatic interactions in mesoscopic ${Ni}_{80} {Fe}_{20}$ ring arrays

J. Wang; A. O. Adeyeye; N. Singh

Appl. Phys. Lett. 87, 262508 (2005) https://doi.org/10.1063/1.2158488

Abstract

View articletitled, Magnetostatic interactions in mesoscopic <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>Ni</mi><mn>80</mn></msub><msub><mi>Fe</mi><mn>20</mn></msub></mrow></math> ring arrays

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Electronic structure of calcium hexaborides

Byounghak Lee; Lin-Wang Wang

Appl. Phys. Lett. 87, 262509 (2005) https://doi.org/10.1063/1.2150578

Abstract

View articletitled, Electronic structure of calcium hexaborides

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Controlled introduction of flux pinning centers in ${YBa}_{2} {Cu}_{3} O_{7 - x}$ films during pulsed-laser deposition

C. Varanasi; P. N. Barnes; J. Burke; J. Carpenter; T. J. Haugan

Appl. Phys. Lett. 87, 262510 (2005) https://doi.org/10.1063/1.2143112

Abstract

View articletitled, Controlled introduction of flux pinning centers in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>YBa</mi><mn>2</mn></msub><msub><mi>Cu</mi><mn>3</mn></msub><msub><mi mathvariant="normal">O</mi><mrow><mn>7</mn><mo>−</mo><mi>x</mi></mrow></msub></mrow></math> films during pulsed-laser deposition

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DIELECTRICS AND FERROELECTRICITY

Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method

Youngdo Won; Sangwook Park; Jaehyoung Koo; Seokhoon Kim; Jinwoo Kim; Hyeongtag Jeon

Appl. Phys. Lett. 87, 262901 (2005) https://doi.org/10.1063/1.2150250

Abstract

View articletitled, Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method

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Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability

M. A. Quevedo-Lopez; S. A. Krishnan; P. D. Kirsch; G. Pant; B. E. Gnade; R. M. Wallace

Appl. Phys. Lett. 87, 262902 (2005) https://doi.org/10.1063/1.2150586

Abstract

View articletitled, Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability

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Polarization reversal of ferroelectric small particles: Surface polarization enhancement and bound charges effects

Laurent Baudry

Appl. Phys. Lett. 87, 262903 (2005) https://doi.org/10.1063/1.2151247

Abstract

View articletitled, Polarization reversal of ferroelectric small particles: Surface polarization enhancement and bound charges effects

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Z-contrast and electron energy loss spectroscopy study of passive layer formation at ferroelectric $Pb Ti O_{3} ∕ Pt$ interfaces

L. F. Fu; S. J. Welz; N. D. Browning; M. Kurasawa; P. C. McIntyre

Appl. Phys. Lett. 87, 262904 (2005) https://doi.org/10.1063/1.2144279

Abstract

View articletitled, Z-contrast and electron energy loss spectroscopy study of passive layer formation at ferroelectric <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Pb</mi><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub><mo>∕</mo><mi mathvariant="normal">Pt</mi></mrow></math> interfaces

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Phase of reflection high-energy electron diffraction oscillations during (Ba,Sr)O epitaxy on Si(100): A marker of Sr barrier integrity

G. J. Norga; C. Marchiori; A. Guiller; J. P. Locquet; Ch. Rossel; H. Siegwart; D. Caimi; J. Fompeyrine; T. Conard

Appl. Phys. Lett. 87, 262905 (2005) https://doi.org/10.1063/1.2158018

Abstract

View articletitled, Phase of reflection high-energy electron diffraction oscillations during (Ba,Sr)O epitaxy on Si(100): A marker of Sr barrier integrity

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Characteristics of $Hf O_{2} - {Al}_{2} O_{3}$ laminate films containing incorporated N as a function of stack structure and annealing temperature

M.-H. Cho; K. B. Chung; C. N. Whang; D.-H. Ko; H. S. Kim

Appl. Phys. Lett. 87, 262906 (2005) https://doi.org/10.1063/1.2147718

Abstract

View articletitled, Characteristics of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Hf</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub><mo>–</mo><msub><mi mathvariant="normal">Al</mi><mn>2</mn></msub><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> laminate films containing incorporated N as a function of stack structure and annealing temperature

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Larger polarization and weak ferromagnetism in quenched $Bi Fe O_{3}$ ceramics with a distorted rhombohedral crystal structure

S. T. Zhang; M. H. Lu; D. Wu; Y. F. Chen; N. B. Ming

Appl. Phys. Lett. 87, 262907 (2005) https://doi.org/10.1063/1.2147719

Abstract

View articletitled, Larger polarization and weak ferromagnetism in quenched <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Bi</mi><mi mathvariant="normal">Fe</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> ceramics with a distorted rhombohedral crystal structure

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Excellent frequency dispersion of thin gadolinium oxide high- $k$ gate dielectrics

Tung-Ming Pan; Chao-Sung Liao; Hui-Hsin Hsu; Chun-Lin Chen; Jian-Der Lee; Kuan-Ti Wang; Jer-Chyi Wang

Appl. Phys. Lett. 87, 262908 (2005) https://doi.org/10.1063/1.2152107

Abstract

View articletitled, Excellent frequency dispersion of thin gadolinium oxide high-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">k</mi></math> gate dielectrics

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Thermal stability of low dielectric constant porous silica films

L. Esposito; G. Ottaviani; E. Carollo; M. Bacchetta

Appl. Phys. Lett. 87, 262909 (2005) https://doi.org/10.1063/1.2159093

Abstract

View articletitled, Thermal stability of low dielectric constant porous silica films

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NANOSCALE SCIENCE AND DESIGN

Temperature control of electromigration to form gold nanogap junctions

G. Esen; M. S. Fuhrer

Appl. Phys. Lett. 87, 263101 (2005) https://doi.org/10.1063/1.2149174

Abstract

View articletitled, Temperature control of electromigration to form gold nanogap junctions

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Periodic pillar structures by Si etching of multilayer $Ge Si ∕ Si$ islands

Z. Zhong; G. Katsaros; M. Stoffel; G. Costantini; K. Kern; O. G. Schmidt; N. Y. Jin-Phillipp; G. Bauer

Appl. Phys. Lett. 87, 263102 (2005) https://doi.org/10.1063/1.2150278

Abstract

View articletitled, Periodic pillar structures by Si etching of multilayer <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ge</mi><mi mathvariant="normal">Si</mi><mo>∕</mo><mi mathvariant="normal">Si</mi></mrow></math> islands

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Nanoscale capacitors based on metal-insulator-carbon nanotube-metal structures

J. E. Jang; S. N. Cha; Y. Choi; G. A. J. Amaratunga; D. J. Kang; D. G. Hasko; J. E. Jung; J. M. Kim

Appl. Phys. Lett. 87, 263103 (2005) https://doi.org/10.1063/1.2149982

Abstract

View articletitled, Nanoscale capacitors based on metal-insulator-carbon nanotube-metal structures

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Nucleation of InN quantum dots on GaN by metalorganic vapor phase epitaxy

J. G. Lozano; A. M. Sánchez; R. García; D. González; D. Araújo; S. Ruffenach; O. Briot

Appl. Phys. Lett. 87, 263104 (2005) https://doi.org/10.1063/1.2152110

Abstract

View articletitled, Nucleation of InN quantum dots on GaN by metalorganic vapor phase epitaxy

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Charge transport effects in field emission from carbon nanotube-polymer composites

R. C. Smith; J. D. Carey; R. J. Murphy; W. J. Blau; J. N. Coleman; S. R. P. Silva

Appl. Phys. Lett. 87, 263105 (2005) https://doi.org/10.1063/1.2158023

Abstract

View articletitled, Charge transport effects in field emission from carbon nanotube-polymer composites

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Scaling of micro- and nanodevices actuated by Casimir forces

J. Bárcenas; L. Reyes; R. Esquivel-Sirvent

Appl. Phys. Lett. 87, 263106 (2005) https://doi.org/10.1063/1.2152835

Abstract

View articletitled, Scaling of micro- and nanodevices actuated by Casimir forces

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High-bias-induced structure and the corresponding electronic property changes in carbon nanotubes

S. Chen; J. Y. Huang; Z. Wang; K. Kempa; G. Chen; Z. F. Ren

Appl. Phys. Lett. 87, 263107 (2005) https://doi.org/10.1063/1.2155116

Abstract

View articletitled, High-bias-induced structure and the corresponding electronic property changes in carbon nanotubes

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Pseudoelasticity of martensitic titanium-nickel shape-memory films studied by in situ heating nanoindentation and transmission electron microscopy

K. Komvopoulos; X.-G. Ma

Appl. Phys. Lett. 87, 263108 (2005) https://doi.org/10.1063/1.2149179

Abstract

View articletitled, Pseudoelasticity of martensitic titanium-nickel shape-memory films studied by in situ heating nanoindentation and transmission electron microscopy

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Photoemission studies of passivation of germanium nanowires

Hemant Adhikari; Paul C. McIntyre; Shiyu Sun; Piero Pianetta; Christopher E. D. Chidsey

Appl. Phys. Lett. 87, 263109 (2005) https://doi.org/10.1063/1.2158027

Abstract

View articletitled, Photoemission studies of passivation of germanium nanowires

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Electrical-field effect on carbon nanotubes in a twisted nematic liquid crystal cell

In-Su Baik; Sang Youn Jeon; Seung Hee Lee; Kyung Ah Park; Seok Ho Jeong; Kay Hyeok An; Young Hee Lee

Appl. Phys. Lett. 87, 263110 (2005) https://doi.org/10.1063/1.2158509

Abstract

View articletitled, Electrical-field effect on carbon nanotubes in a twisted nematic liquid crystal cell

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Nanoimprint pattern transfer quality from specular x-ray reflectivity

Hae-Jeong Lee; Christopher L. Soles; Hyun Wook Ro; Ronald L. Jones; Eric K. Lin; Wen-li Wu; Daniel R. Hines

Appl. Phys. Lett. 87, 263111 (2005) https://doi.org/10.1063/1.2158512

Abstract

View articletitled, Nanoimprint pattern transfer quality from specular x-ray reflectivity

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Growth of single conductive nanowires at prescribed loci

Chuanding Cheng; Donald T. Haynie

Appl. Phys. Lett. 87, 263112 (2005) https://doi.org/10.1063/1.2158513

Abstract

View articletitled, Growth of single conductive nanowires at prescribed loci

Supplementary Material

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Field-modified photoluminescence spectra in coupled quantum dots

Jia-Lin Zhu; Weidong Chu; Dong Xu; Zhensheng Dai

Appl. Phys. Lett. 87, 263113 (2005) https://doi.org/10.1063/1.2158523

Abstract

View articletitled, Field-modified photoluminescence spectra in coupled quantum dots

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Self-organized MnAs quantum dots formed during annealing of GaMnAs under arsenic capping

J. Sadowski; E. Janik; E. Lusakowska; J. Z. Domagala; S. Kret; P. Dlużewski; M. Adell; J. Kanski; L. Ilver; R. Brucas; M. Hanson

Appl. Phys. Lett. 87, 263114 (2005) https://doi.org/10.1063/1.2158524

Abstract

View articletitled, Self-organized MnAs quantum dots formed during annealing of GaMnAs under arsenic capping

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Radiative recombination of charged excitons and multiexcitons in CdSe quantum dots

M. C. Troparevsky; A. Franceschetti

Appl. Phys. Lett. 87, 263115 (2005) https://doi.org/10.1063/1.2150583

Abstract

View articletitled, Radiative recombination of charged excitons and multiexcitons in CdSe quantum dots

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Blueshift of surface plasmon resonance spectra in anneal-treated silver nanoslit arrays

Yun Suk Jung; Zhijun Sun; Hong Koo Kim; Jean Blachere

Appl. Phys. Lett. 87, 263116 (2005) https://doi.org/10.1063/1.2159095

Abstract

View articletitled, Blueshift of surface plasmon resonance spectra in anneal-treated silver nanoslit arrays

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Electrical conductivity of a single $C_{60}$ nanotube

Y. J. Xing; G. Y. Jing; J. Xu; D. P. Yu; H. B. Liu; Y. L. Li

Appl. Phys. Lett. 87, 263117 (2005) https://doi.org/10.1063/1.2159103

Abstract

View articletitled, Electrical conductivity of a single <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">C</mi><mn>60</mn></msub></mrow></math> nanotube

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Carbon nanotube effects on electroluminescence and photovoltaic response in conjugated polymers

Zhihua Xu; Yue Wu; Bin Hu; Ilia N. Ivanov; David B. Geohegan

Appl. Phys. Lett. 87, 263118 (2005) https://doi.org/10.1063/1.2152113

Abstract

View articletitled, Carbon nanotube effects on electroluminescence and photovoltaic response in conjugated polymers

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Printing of organic and inorganic nanomaterials using electrospray ionization and Coulomb-force-directed assembly

Aaron M. Welle; Heiko O. Jacobs

Appl. Phys. Lett. 87, 263119 (2005) https://doi.org/10.1063/1.2149985

Abstract

View articletitled, Printing of organic and inorganic nanomaterials using electrospray ionization and Coulomb-force-directed assembly

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Metamorphic buffers and optical measurement of residual strain

M. Geddo; G. Guizzetti; M. Patrini; T. Ciabattoni; L. Seravalli; P. Frigeri; S. Franchi

Appl. Phys. Lett. 87, 263120 (2005) https://doi.org/10.1063/1.2159106

Abstract

View articletitled, Metamorphic buffers and optical measurement of residual strain

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DEVICE PHYSICS

Improved breakdown voltage and impact ionization in $In Al As ∕ In Ga As$ metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate

Kuan-Wei Lee; Nan-Ying Yang; Mau-Phon Houng; Yeong-Her Wang; Po-Wen Sze

Appl. Phys. Lett. 87, 263501 (2005) https://doi.org/10.1063/1.2151252

Abstract

View articletitled, Improved breakdown voltage and impact ionization in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>In</mi><mi>Al</mi><mi>As</mi><mo>∕</mo><mi>In</mi><mi>Ga</mi><mi>As</mi></mrow></math> metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate

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Vacuum level alignment at organic/metal junctions: “Cushion” effect and the interface dipole

Gregor Witte; Simon Lukas; Paul S. Bagus; Christof Wöll

Appl. Phys. Lett. 87, 263502 (2005) https://doi.org/10.1063/1.2151253

Abstract

View articletitled, Vacuum level alignment at organic/metal junctions: “Cushion” effect and the interface dipole

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Highly efficient microcrystalline silicon solar cells deposited from a pure ${SiH}_{4}$ flow

M. N. van den Donker; B. Rech; F. Finger; W. M. M. Kessels; M. C. M. van de Sanden

Appl. Phys. Lett. 87, 263503 (2005) https://doi.org/10.1063/1.2152115

Abstract

View articletitled, Highly efficient microcrystalline silicon solar cells deposited from a pure <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>SiH</mi><mn>4</mn></msub></mrow></math> flow

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Implication of device functioning due to back reaction of electrons via the conducting glass substrate in dye sensitized solar cells

Sarmimala Hore; Rainer Kern

Appl. Phys. Lett. 87, 263504 (2005) https://doi.org/10.1063/1.2149215

Abstract

View articletitled, Implication of device functioning due to back reaction of electrons via the conducting glass substrate in dye sensitized solar cells

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Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation

J. Knoch; M. Zhang; Q. T. Zhao; St. Lenk; S. Mantl; J. Appenzeller

Appl. Phys. Lett. 87, 263505 (2005) https://doi.org/10.1063/1.2150581

Abstract

View articletitled, Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation

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Current-induced vortex unbinding in bolometer mixers

R. Barends; M. Hajenius; J. R. Gao; T. M. Klapwijk

Appl. Phys. Lett. 87, 263506 (2005) https://doi.org/10.1063/1.2158510

Abstract

View articletitled, Current-induced vortex unbinding in bolometer mixers

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Electrode dependence of resistance switching in polycrystalline NiO films

S. Seo; M. J. Lee; D. C. Kim; S. E. Ahn; B.-H Park; Y. S. Kim; I. K. Yoo; I. S. Byun; I. R. Hwang; S. H. Kim; J.-S. Kim; J. S. Choi; J. H. Lee; S. H. Jeon; S. H. Hong; B. H. Park

Appl. Phys. Lett. 87, 263507 (2005) https://doi.org/10.1063/1.2150580

Abstract

View articletitled, Electrode dependence of resistance switching in polycrystalline NiO films

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APPLIED BIOPHYSICS

Chemical functionalization of GaN and AlN surfaces

B. Baur; G. Steinhoff; J. Hernando; O. Purrucker; M. Tanaka; B. Nickel; M. Stutzmann; M. Eickhoff

Appl. Phys. Lett. 87, 263901 (2005) https://doi.org/10.1063/1.2150280

Abstract

View articletitled, Chemical functionalization of GaN and AlN surfaces

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Nanofilter array chip for fast gel-free biomolecule separation

Jianping Fu; Pan Mao; Jongyoon Han

Appl. Phys. Lett. 87, 263902 (2005) https://doi.org/10.1063/1.2149979

Abstract

View articletitled, Nanofilter array chip for fast gel-free biomolecule separation

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Thinning out clusters while conserving stoichiometry of labeling

Manuel Moertelmaier; Mario Brameshuber; Mario Linimeier; Gerhard J. Schütz; Hannes Stockinger

Appl. Phys. Lett. 87, 263903 (2005) https://doi.org/10.1063/1.2158031

Abstract

View articletitled, Thinning out clusters while conserving stoichiometry of labeling

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INTERDISCIPLINARY AND GENERAL PHYSICS

Computed tomography algorithm based on diffraction-enhanced imaging setup

P. P. Zhu; J. Y. Wang; Q. X. Yuan; W. X. Huang; H. Shu; B. Gao; T. D. Hu; Z. Y. Wu

Appl. Phys. Lett. 87, 264101 (2005) https://doi.org/10.1063/1.2155117

Abstract

View articletitled, Computed tomography algorithm based on diffraction-enhanced imaging setup

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Light yield of undoped sapphire at low temperature under particle excitation

Appl. Phys. Lett. 87, 264102 (2005) https://doi.org/10.1063/1.2158518

Abstract

View articletitled, Light yield of undoped sapphire at low temperature under particle excitation

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Time-resolved dynamics of resonant and nonresonant broadband picosecond coherent anti-Stokes Raman scattering signals

Sukesh Roy; Terrence R. Meyer; James R. Gord

Appl. Phys. Lett. 87, 264103 (2005) https://doi.org/10.1063/1.2159576

Abstract

View articletitled, Time-resolved dynamics of resonant and nonresonant broadband picosecond coherent anti-Stokes Raman scattering signals

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Sensitive elemental analysis by ArF laser-induced fluorescence of laser ablation plumes: Elucidation of the fluorescence mechanism

S. K. Ho; N. H. Cheung

Appl. Phys. Lett. 87, 264104 (2005) https://doi.org/10.1063/1.2149983

Abstract

View articletitled, Sensitive elemental analysis by ArF laser-induced fluorescence of laser ablation plumes: Elucidation of the fluorescence mechanism

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Simultaneous microRaman and synchrotron radiation microdiffraction: Tools for materials characterization

R. J. Davies; M. Burghammer; C. Riekel

Appl. Phys. Lett. 87, 264105 (2005) https://doi.org/10.1063/1.2159087

Abstract

View articletitled, Simultaneous microRaman and synchrotron radiation microdiffraction: Tools for materials characterization

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Development of microcoulometry for measuring oxygen content in copper oxides

Fumiaki Sato; Masaaki Fujihara; Naokazu Komiyama; Shiro Kambe; Osamu Ishii

Appl. Phys. Lett. 87, 264106 (2005) https://doi.org/10.1063/1.2146053

Abstract

View articletitled, Development of microcoulometry for measuring oxygen content in copper oxides

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ERRATA

Erratum: “Bragg grating magnetic photonic crystal waveguides” [Appl. Phys. Lett. 86, 251102 (2005)]

Rong Li; Miguel Levy

Appl. Phys. Lett. 87, 269901 (2005) https://doi.org/10.1063/1.2153013

Extract

View articletitled, Erratum: “Bragg grating magnetic photonic crystal waveguides” [Appl. Phys. Lett. 86, 251102 (2005)]

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Erratum: “Electrochemical hydrogen storage of Ti–V-based body-centered-cubic phase alloy surface-modified with ${AB}_{5}$ nanoparticles” [Appl. Phys. Lett. 87, 133121 (2005)]

X. B. Yu; G. S. Walker; D. M. Grant; Z. Wu; B. J. Xia; J. Shen

Appl. Phys. Lett. 87, 269902 (2005) https://doi.org/10.1063/1.2153038

Extract

View articletitled, Erratum: “Electrochemical hydrogen storage of Ti–V-based body-centered-cubic phase alloy surface-modified with <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>AB</mi><mn>5</mn></msub></mrow></math> nanoparticles” [Appl. Phys. Lett. 87, 133121 (2005)]

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

APPLIED BIOPHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

ERRATA

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