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LASERS, OPTICS, AND OPTOELECTRONICS

Highly efficient tunable tapered-polymer-fiber lasers

Qinjun Peng; Guiling Wang; Yong Bo; Xinjun Guo; Aicong Geng; Zuyan Xu; Liyong Ren; Yani Zhang; Yishan Wang; Wei Zhao; Lili Wang

Appl. Phys. Lett. 87, 251101 (2005) https://doi.org/10.1063/1.2149155

Abstract

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All optically tunable wavelength-selective reflector consisting of coupled polymeric microring resonators

Jacob Scheuer; George T. Paloczi; Amnon Yariv

Appl. Phys. Lett. 87, 251102 (2005) https://doi.org/10.1063/1.2149158

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Quasiphase matched harmonic generation in a two-dimensional octagonal photonic superlattice

Boqin Ma; Ting Wang; Yan Sheng; Peigen Ni; Yiquan Wang; Bingying Cheng; Daozhong Zhang

Appl. Phys. Lett. 87, 251103 (2005) https://doi.org/10.1063/1.2138352

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Dual localizations for second-harmonic generations using left-handed materials

Jing Chen; Fang-Fang Ren; Rui Li; Nian-Hai Shen; Ya-Xian Fan; Jianping Ding; Hui-Tian Wang

Appl. Phys. Lett. 87, 251104 (2005) https://doi.org/10.1063/1.2149967

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Coded excitation of broadband terahertz using optical rectification in poled lithium niobate

T. Buma; T. B. Norris

Appl. Phys. Lett. 87, 251105 (2005) https://doi.org/10.1063/1.2149969

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Optimization of tapered semiconductor optical amplifiers for picosecond pulse amplification

E. Gehrig; O. Hess

Appl. Phys. Lett. 87, 251106 (2005) https://doi.org/10.1063/1.2149177

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Design for a triply resonant vertical-emitting micro-optical parametric oscillator

C. Diederichs; J. Tignon

Appl. Phys. Lett. 87, 251107 (2005) https://doi.org/10.1063/1.2150282

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Optical gain from InAs nanocrystal quantum dots in a polymer matrix

Gang Chen; Ronen Rapaport; Dan T. Fuchs; Leah Lucas; Andrew J. Lovinger; Sahar Vilan; Assaf Aharoni; Uri Banin

Appl. Phys. Lett. 87, 251108 (2005) https://doi.org/10.1063/1.2149176

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Impact of N on the lasing characteristics of $GaInNAs ∕ GaAs$ quantum well lasers emitting from 1.29 to $1.52 μ m$

J. M. Ulloa; A. Hierro; M. Montes; B. Damilano; M. Hugues; J. Barjon; J.-Y. Duboz; J. Massies

Appl. Phys. Lett. 87, 251109 (2005) https://doi.org/10.1063/1.2151249

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Cadmium telluride bulk crystal as an ultrafast nonlinear optical switch

Satoshi Tatsuura; Takashi Matsubara; Hiroyuki Mitsu; Yasuhiro Sato; Izumi Iwasa; Minquan Tian; Makoto Furuki

Appl. Phys. Lett. 87, 251110 (2005) https://doi.org/10.1063/1.2151256

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Scaling of domain size during spinodal decomposition: Dislocation discreteness and mobility effects

Mikko Haataja; Jennifer Mahon; Nikolas Provatas; Francois Léonard

Appl. Phys. Lett. 87, 251901 (2005) https://doi.org/10.1063/1.2147732

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High-quality nanothickness single-crystal ${Sc}_{2} O_{3}$ film grown on Si(111)

M. Hong; A. R. Kortan; P. Chang; Y. L. Huang; C. P. Chen; H. Y. Chou; H. Y. Lee; J. Kwo; M.-W. Chu; C. H. Chen; L. V. Goncharova; E. Garfunkel; T. Gustafsson

Appl. Phys. Lett. 87, 251902 (2005) https://doi.org/10.1063/1.2147711

Abstract

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Electron energy-loss spectrometry studies of bonding in nanoscale $Ni - Si O_{2}$ multilayers

Seth T. Taylor; Ronald Gronsky

Appl. Phys. Lett. 87, 251903 (2005) https://doi.org/10.1063/1.2147712

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Optical properties of thin films of $[Ru {(bpy)}_{3}] [Na Cr {(ox)}_{3}]$ polymeric networks

Sebastien Rabaste; Nahid Amstutz; Andreas Hauser; Anne Pillonnet

Appl. Phys. Lett. 87, 251904 (2005) https://doi.org/10.1063/1.2143409

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Nanoindentation of HgCdTe prepared by molecular beam epitaxy

M. Martyniuk; R. H. Sewell; C. A. Musca; J. M. Dell; L. Faraone

Appl. Phys. Lett. 87, 251905 (2005) https://doi.org/10.1063/1.2143411

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Two-staged sorption isotherm of a nanoporous energy absorption system

Falgun B. Surani; Xinguo Kong; Yu Qiao

Appl. Phys. Lett. 87, 251906 (2005) https://doi.org/10.1063/1.2144280

Abstract

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Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness

Lin Shao; Yuan Lin; J. G. Swadener; J. K. Lee; Q. X. Jia; Y. Q. Wang; M. Nastasi; Phillip E. Thompson; N. David Theodore; T. L. Alford; J. W. Mayer; Peng Chen; S. S. Lau

Appl. Phys. Lett. 87, 251907 (2005) https://doi.org/10.1063/1.2146211

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Self-assembly of steps and vacancy lines during the early stages of $Ge ∕ Si (001)$ heteroepitaxy

D. T. Tambe; C. V. Ciobanu; V. B. Shenoy

Appl. Phys. Lett. 87, 251908 (2005) https://doi.org/10.1063/1.2147720

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Effect of local ordering on the decomposition of an amorphous Cu–Zr–Ti alloy

Zs. Kovács; Á Révész

Appl. Phys. Lett. 87, 251909 (2005) https://doi.org/10.1063/1.2149175

Abstract

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Optical spectroscopy of trivalent chromium in sol-gel lithium niobate

J. K. Krebs; U. Happek

Appl. Phys. Lett. 87, 251910 (2005) https://doi.org/10.1063/1.2149182

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Photoluminescence of Si nanocrystal memory devices obtained by ion beam synthesis

Marzia Carrada; Anja Wellner; Vincent Paillard; Caroline Bonafos; Hubert Coffin; Alain Claverie

Appl. Phys. Lett. 87, 251911 (2005) https://doi.org/10.1063/1.2143130

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Optical properties of nanocluster-assembled ZnO thin films by nanocluster-beam deposition

Z. W. Zhao; B. K. Tay; J. S. Chen; J. F. Hu; X. W. Sun; S. T. Tan

Appl. Phys. Lett. 87, 251912 (2005) https://doi.org/10.1063/1.2149170

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Role of substrate and transparent conducting oxide in impurity evolvement in polycrystalline thin-film devices

M. Emziane; K. Durose; D. P. Halliday; A. Bosio; N. Romeo

Appl. Phys. Lett. 87, 251913 (2005) https://doi.org/10.1063/1.2149990

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Ultrafast dynamics of femtosecond laser-induced periodic surface pattern formation on metals

Jincheng Wang; Chunlei Guo

Appl. Phys. Lett. 87, 251914 (2005) https://doi.org/10.1063/1.2146067

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Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template

Y. D. Wang; K. Y. Zang; S. J. Chua; S. Tripathy; P. Chen; C. G. Fonstad

Appl. Phys. Lett. 87, 251915 (2005) https://doi.org/10.1063/1.2147716

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Grain boundary migration as rotational deformation mode in nanocrystalline materials

M. Yu. Gutkin; I. A. Ovid’ko

Appl. Phys. Lett. 87, 251916 (2005) https://doi.org/10.1063/1.2147721

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Thermal stability of a slab waveguide implemented by $α$ particles implantation in potassium lithium tantalate niobate

Alexander Gumennik; Aharon J. Agranat; Igal Shachar; Michael Hass

Appl. Phys. Lett. 87, 251917 (2005) https://doi.org/10.1063/1.2147723

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Investigation of local ordering and electronic structure in Si- and hydrogen-doped tetrahedral amorphous carbon thin films

G. A. Abbas; P. Papakonstantinou; J. A. McLaughlin

Appl. Phys. Lett. 87, 251918 (2005) https://doi.org/10.1063/1.2149173

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Applicability of Born’s stability criterion to face-centered-cubic crystals in [111] loading

Frederick Milstein; Jianhua Zhao; Somchart Chantasiriwan; Dimitrios Maroudas

Appl. Phys. Lett. 87, 251919 (2005) https://doi.org/10.1063/1.2149151

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Strong and stable ultraviolet emission from porous silicon prepared by photoetching in aqueous KF solution

Katsuhiro Tomioka; Sadao Adachi

Appl. Phys. Lett. 87, 251920 (2005) https://doi.org/10.1063/1.2149157

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Lattice distortion in nanostructured porous silicon

L. Pascual; R. J. Martín-Palma; A. R. Landa-Cánovas; P. Herrero; J. M. Martínez-Duart

Appl. Phys. Lett. 87, 251921 (2005) https://doi.org/10.1063/1.2149973

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Tin doped indium oxide transparent conducting thin films containing silver nanoparticles by sol-gel technique

Boen Houng

Appl. Phys. Lett. 87, 251922 (2005) https://doi.org/10.1063/1.2149223

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Visible luminescence from octadecylsilane monolayers on silica surfaces: Time-resolved photoluminescence characterization

Natsuko Sagawa; Takashi Uchino

Appl. Phys. Lett. 87, 251923 (2005) https://doi.org/10.1063/1.2149290

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Role of Ti in the formation of Zr–Ti–Cu–Ni–Al glasses

T. H. Kim; A. K. Gangopadhyay; L. Q. Xing; G. W. Lee; Y. T. Shen; K. F. Kelton; A. I. Goldman; R. W. Hyers; J. R. Rogers

Appl. Phys. Lett. 87, 251924 (2005) https://doi.org/10.1063/1.2149368

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Mechanism for stamp collapse in soft lithography

W. Zhou; Y. Huang; E. Menard; N. R. Aluru; J. A. Rogers; A. G. Alleyne

Appl. Phys. Lett. 87, 251925 (2005) https://doi.org/10.1063/1.2149513

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Strain relaxation in patterned strained silicon directly on insulator structures

R. Z. Lei; W. Tsai; I. Aberg; T. B. O’Reilly; J. L. Hoyt; D. A. Antoniadis; Henry I. Smith; A. J. Paul; M. L. Green; J. Li; R. Hull

Appl. Phys. Lett. 87, 251926 (2005) https://doi.org/10.1063/1.2149153

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Crystal orientation dependence of the electro-optic effect in epitaxial lanthanum-modified lead zirconate titanate films

Keisuke Sato; Masatoshi Ishii; Kazuaki Kurihara; Masao Kondo

Appl. Phys. Lett. 87, 251927 (2005) https://doi.org/10.1063/1.2147722

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Photoluminescence characterization of strained Si-SiGe-on-insulator wafers with different Ge fractions

Dong Wang; Hiroshi Nakashima; Koji Matsumoto; Masahiko Nakamae

Appl. Phys. Lett. 87, 251928 (2005) https://doi.org/10.1063/1.2152109

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Chirality- and size-dependent elastic properties of single-walled carbon nanotubes

Tienchong Chang; Jingyan Geng; Xingming Guo

Appl. Phys. Lett. 87, 251929 (2005) https://doi.org/10.1063/1.2149216

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Reflection high energy electron diffraction observation of surface mass transport at the two- to three-dimensional growth transition of InAs on GaAs(001)

F. Patella; F. Arciprete; M. Fanfoni; V. Sessi; A. Balzarotti; E. Placidi

Appl. Phys. Lett. 87, 252101 (2005) https://doi.org/10.1063/1.2147731

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Photoluminescence study of Sb-doped $p$ -type ZnO films by molecular-beam epitaxy

F. X. Xiu; Z. Yang; L. J. Mandalapu; D. T. Zhao; J. L. Liu

Appl. Phys. Lett. 87, 252102 (2005) https://doi.org/10.1063/1.2146208

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Structure investigation of low-temperature-grown GaAsSb, a material for photoconductive terahertz antennas

J. Sigmund; C. Sydlo; H. L. Hartnagel; N. Benker; H. Fuess; F. Rutz; T. Kleine-Ostmann; M. Koch

Appl. Phys. Lett. 87, 252103 (2005) https://doi.org/10.1063/1.2149977

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Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown ${Al}_{2} O_{3}$

M. L. Huang; Y. C. Chang; C. H. Chang; Y. J. Lee; P. Chang; J. Kwo; T. B. Wu; M. Hong

Appl. Phys. Lett. 87, 252104 (2005) https://doi.org/10.1063/1.2146060

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High carrier mobility in low band gap polymer-based field-effect transistors

Miaoxiang Chen; Xavier Crispin; Erik Perzon; Mats R. Andersson; Tönu Pullerits; Mattias Andersson; Olle Inganäs; Magnus Berggren

Appl. Phys. Lett. 87, 252105 (2005) https://doi.org/10.1063/1.2142289

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p-type behavior in In–N codoped ZnO thin films

L. L. Chen; J. G. Lu; Z. Z. Ye; Y. M. Lin; B. H. Zhao; Y. M. Ye; J. S. Li; L. P. Zhu

Appl. Phys. Lett. 87, 252106 (2005) https://doi.org/10.1063/1.2146309

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Effect of ${Cl}_{2} ∕ Ar$ dry etching on $p$ -GaN with $Ni ∕ Au$ metallization characterization

Kuang-Po Hsueh; Hung-Tsao Hsu; Che-Ming Wang; Shou-Chian Huang; Yue-Ming Hsin; Jinn-Kong Sheu

Appl. Phys. Lett. 87, 252107 (2005) https://doi.org/10.1063/1.2149156

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Noise-voltage mapping by a quantum-Hall electrometer

Y. Kawano; T. Okamoto

Appl. Phys. Lett. 87, 252108 (2005) https://doi.org/10.1063/1.2149221

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12.5 nm base pseudomorphic heterojunction bipolar transistors achieving $f_{T} = 710 GHz$ and $f_{MAX} = 340 GHz$

Walid Hafez; William Snodgrass; Milton Feng

Appl. Phys. Lett. 87, 252109 (2005) https://doi.org/10.1063/1.2149510

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Electronegativity model for barrier formation at metal/organic interfaces

J. X. Tang; C. S. Lee; S. T. Lee

Appl. Phys. Lett. 87, 252110 (2005) https://doi.org/10.1063/1.2149178

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Carrier relaxation dynamics in annealed and hydrogenated $(Ga In) (N As) ∕ Ga As$ quantum wells

K. Hantke; J. D. Heber; S. Chatterjee; P. J. Klar; K. Volz; W. Stolz; W. W. Rühle; A. Polimeni; M. Capizzi

Appl. Phys. Lett. 87, 252111 (2005) https://doi.org/10.1063/1.2149154

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Switch-on overshoot transient decay mechanism in polycrystalline silicon thin-film transistors

G. J. Papaioannou; M. Exarchos; D. N. Kouvatsos; A. T. Voutsas

Appl. Phys. Lett. 87, 252112 (2005) https://doi.org/10.1063/1.2138806

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Electrical activation of the ${Fe}^{2 + ∕ 3 +}$ trap in Fe-implanted InP

B. Fraboni; A. Gasparotto; T. Cesca; A. Verna; G. Impellizzeri; F. Priolo

Appl. Phys. Lett. 87, 252113 (2005) https://doi.org/10.1063/1.2150281

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Phonon-induced breakdown of negative bend resistance in an asymmetric $Si ∕ Si Ge$ cross junction

U. Wieser; S. A. Poenariu; U. Kunze; T. Hackbarth

Appl. Phys. Lett. 87, 252114 (2005) https://doi.org/10.1063/1.2150268

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Spin dynamics in dilute nitride semiconductors at room temperature

L. Lombez; P.-F. Braun; H. Carrère; B. Urbaszek; P. Renucci; T. Amand; X. Marie; J. C. Harmand; V. K. Kalevich

Appl. Phys. Lett. 87, 252115 (2005) https://doi.org/10.1063/1.2150252

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The Meyer-Neldel compensation law for electrical conductivity in olivine

Xiaoping Wu; Yong-Fei Zheng

Appl. Phys. Lett. 87, 252116 (2005) https://doi.org/10.1063/1.2150270

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Temperature-dependent exciton dynamics in a ZnO thin film

Fang-Yi Jen; Yen-Cheng Lu; Cheng-Yen Chen; Hsiang-Chen Wang; C. C. Yang; Bao-ping Zhang; Yusaburo Segawa

Appl. Phys. Lett. 87, 252117 (2005) https://doi.org/10.1063/1.2150277

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“EL2” revisited: Observation of metastable and stable energy levels of EL2 in semi-insulating GaAs

D. Kabiraj; Subhasis Ghosh

Appl. Phys. Lett. 87, 252118 (2005) https://doi.org/10.1063/1.2150579

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Effects of heavy boron doping on the valence band offset at the ${Si}_{1 - x} {Ge}_{x} ∕ Si$ interface and ${Si}_{1 - x} {Ge}_{x}$ band gap

Jing Liu; Mehmet C. Ozturk

Appl. Phys. Lett. 87, 252119 (2005) https://doi.org/10.1063/1.2149295

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MAGNETISM AND SUPERCONDUCTIVITY

Magnetic and electrical properties of $Fe ∕ Si$ core-shell cluster assemblies prepared with double-glow-discharge sources

R. Katoh; T. Hihara; D. L. Peng; K. Sumiyama

Appl. Phys. Lett. 87, 252501 (2005) https://doi.org/10.1063/1.2149972

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Absence of magnetism in hafnium oxide films

David W. Abraham; Martin M. Frank; Supratik Guha

Appl. Phys. Lett. 87, 252502 (2005) https://doi.org/10.1063/1.2146057

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Magnetic properties of $Li ({Mn}_{y} {Fe}_{1 - y}) P O_{4}$ and its delithiated phases

Atsuo Yamada; Yuki Takei; Hiroshi Koizumi; Noriyuki Sonoyama; Ryoji Kanno

Appl. Phys. Lett. 87, 252503 (2005) https://doi.org/10.1063/1.2147734

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Competing functionality in multiferroic $Y Mn O_{3}$

Joonghoe Dho; M. G. Blamire

Appl. Phys. Lett. 87, 252504 (2005) https://doi.org/10.1063/1.2147717

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Superior high-field current density in slightly Mg-deficient ${MgB}_{2}$ tapes

C. H. Jiang; T. Nakane; H. Kumakura

Appl. Phys. Lett. 87, 252505 (2005) https://doi.org/10.1063/1.2149976

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Temperature dependence of the return current in ${Bi}_{2} {Sr}_{2} Ca {Cu}_{2} O_{x}$ stacks fabricated by self-planarizing process

K. Okanoue; K. Hamasaki

Appl. Phys. Lett. 87, 252506 (2005) https://doi.org/10.1063/1.2149169

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High critical current densities in ${YBa}_{2} {Cu}_{3} O_{7 - x}$ films grown at high rates by hybrid liquid phase epitaxy

A. Kursumovic; J. E. Evetts; J. L. MacManus-Driscoll; B. Maiorov; L. Civale; H. Wang; Q. X. Jia; S. R. Foltyn

Appl. Phys. Lett. 87, 252507 (2005) https://doi.org/10.1063/1.2149975

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Comparison of measured and calculated specific resistances of $Pd ∕ Pt$ interfaces

S. K. Olson; R. Loloee; N. Theodoropoulou; W. P. Pratt, Jr.; J. Bass; P. X. Xu; Ke Xia

Appl. Phys. Lett. 87, 252508 (2005) https://doi.org/10.1063/1.2149978

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High upper critical field and irreversibility field in ${MgB}_{2}$ coated-conductor fibers

V. Ferrando; P. Orgiani; A. V. Pogrebnyakov; J. Chen; Qi Li; J. M. Redwing; X. X. Xi; J. E. Giencke; Chang-Beom Eom; Qing-Rong Feng; J. B. Betts; C. H. Mielke

Appl. Phys. Lett. 87, 252509 (2005) https://doi.org/10.1063/1.2149289

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Phase stability, oxygen nonstoichiometry and magnetic properties of $Bi Fe O_{3 - δ}$

Meicheng Li; Judith L. MacManus-Driscoll

Appl. Phys. Lett. 87, 252510 (2005) https://doi.org/10.1063/1.2150249

Abstract

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DIELECTRICS AND FERROELECTRICITY

Single-ionized-oxygen-vacancy-related dielectric relaxation in ${Bi}_{3.25} {La}_{0.75} {Ti}_{3} O_{12}$ ferroelectric films

N. Zhong; S. Okamura; K. Uchiyama; T. Shiosaki

Appl. Phys. Lett. 87, 252901 (2005) https://doi.org/10.1063/1.2147710

Abstract

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Polarization switching in epitaxial $Bi Fe O_{3}$ films

F. Zavaliche; P. Shafer; R. Ramesh; M. P. Cruz; R. R. Das; D. M. Kim; C. B. Eom

Appl. Phys. Lett. 87, 252902 (2005) https://doi.org/10.1063/1.2149180

Abstract

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Improvement in bias instabilities of Hf-silicate by dilute hydrochloric acid (500:1) post-deposition rinsing and its effect after high-pressure $H_{2}$ anneal

Mohammad S. Akbar; Naim Moumen; Joel Barnett; Byoung Hun Lee; Jack C. Lee

Appl. Phys. Lett. 87, 252903 (2005) https://doi.org/10.1063/1.2149974

Abstract

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Extrinsic origin of giant permittivity in hexagonal $Ba Ti O_{3}$ single crystals: Contributions of interfacial layer and depletion layer

Jianding Yu; Takehiko Ishikawa; Yasutomo Arai; Shinichi Yoda; Mitsuru Itoh; Yutaka Saita

Appl. Phys. Lett. 87, 252904 (2005) https://doi.org/10.1063/1.2123381

Abstract

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Refractive index changes by electrically induced domain reversal in a $c$ -cut slab of ${LiNbO}_{3}$

Feng Gao; Jingjun Xu; Boxia Yan; Jianghong Yao; Bo Fu; Zhenhua Wang; Jiwei Qi; Baiquan Tang; Romano A. Rupp

Appl. Phys. Lett. 87, 252905 (2005) https://doi.org/10.1063/1.2149217

Abstract

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Soft mode behavior and phase transition in ${Ba}_{x} {Sr}_{1 - x} Ti O_{3}$

H. Wu; W. Z. Shen

Appl. Phys. Lett. 87, 252906 (2005) https://doi.org/10.1063/1.2147725

Abstract

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Fabrication of ${PbLa}_{0.05} {TiO}_{3} ∕ {Pb}_{1.20} ({Zr}_{0.52} {Ti}_{0.48}) O_{3} ∕ {PbLa}_{0.05} {TiO}_{3}$ ferroelectric structure on platinum electrodes by a sol-gel process

S. Ezhilvalavan; Victor D Samper; Jackie Y. Ying

Appl. Phys. Lett. 87, 252907 (2005) https://doi.org/10.1063/1.2150275

Abstract

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Spatial fluctuation of dielectric properties in Hf-based high- $k$ gate films studied by scanning capacitance microscopy

Y. Naitou; A. Ando; H. Ogiso; S. Kamiyama; Y. Nara; K. Nakamura; H. Watanabe; K. Yasutake

Appl. Phys. Lett. 87, 252908 (2005) https://doi.org/10.1063/1.2149222

Abstract

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NANOSCALE SCIENCE AND DESIGN

Hydrogen passivation of germanium (100) surface using wet chemical preparation

Sandrine Rivillon; Yves J. Chabal; Fabrice Amy; Antoine Kahn

Appl. Phys. Lett. 87, 253101 (2005) https://doi.org/10.1063/1.2142084

Abstract

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Effect of electronic structure on carrier multiplication efficiency: Comparative study of PbSe and CdSe nanocrystals

Richard D. Schaller; Melissa A. Petruska; Victor I. Klimov

Appl. Phys. Lett. 87, 253102 (2005) https://doi.org/10.1063/1.2142092

Abstract

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Electronic properties of InN nanowires

Guosheng Cheng; Eric Stern; Daniel Turner-Evans; Mark A Reed

Appl. Phys. Lett. 87, 253103 (2005) https://doi.org/10.1063/1.2141927

Abstract

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Low-temperature $(\sim 250 ° C)$ route to lateral growth of ZnO nanowires

Congkang Xu; Keehan Rho; Junghwan Chun; Dong-Eon Kim

Appl. Phys. Lett. 87, 253104 (2005) https://doi.org/10.1063/1.2142090

Abstract

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Determination of the local structure of luminescent sites in ZnS nanowires using x-ray excited optical luminescence

R. A. Rosenberg; G. K. Shenoy; F. Heigl; S.-T. Lee; P.-S. G. Kim; X.-T. Zhou; T. K. Sham

Appl. Phys. Lett. 87, 253105 (2005) https://doi.org/10.1063/1.2143114

Abstract

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Single electrospun regioregular poly(3-hexylthiophene) nanofiber field-effect transistor

Haiqing Liu; Christian H. Reccius; H. G. Craighead

Appl. Phys. Lett. 87, 253106 (2005) https://doi.org/10.1063/1.2149980

Abstract

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Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors

Siyuranga O. Koswatta; Mark S. Lundstrom; M. P. Anantram; Dmitri E. Nikonov

Appl. Phys. Lett. 87, 253107 (2005) https://doi.org/10.1063/1.2146065

Abstract

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Single-electron tunneling at room temperature in ${Ti}_{x} {Si}_{1 - x} O_{2}$ nanocomposite thin films

D. K. Sarkar; D. Brassard; M. A. El Khakani; L. Ouellet

Appl. Phys. Lett. 87, 253108 (2005) https://doi.org/10.1063/1.2147729

Abstract

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Carrier transport in PbS nanocrystal conducting polymer composites

Andrew Watt; Troy Eichmann; Halina Rubinsztein-Dunlop; Paul Meredith

Appl. Phys. Lett. 87, 253109 (2005) https://doi.org/10.1063/1.2140885

Abstract

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Observation of exciton molecule consisting of two different excitons in coupled quantum dots

Keishiro Goshima; Shohgo Yamauchi; Kazuhiro Komori; Isao Morohashi; Takeyoshi Sugaya

Appl. Phys. Lett. 87, 253110 (2005) https://doi.org/10.1063/1.2147724

Abstract

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Nitride-mediated epitaxy of self-assembled $Ni {Si}_{2}$ nanowires on (001)Si

S. Y. Chen; L. J. Chen

Appl. Phys. Lett. 87, 253111 (2005) https://doi.org/10.1063/1.2149970

Abstract

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Characterization of nanoporous Si thin films obtained by Al–Si phase separation

Kazuhiko Fukutani; Youhei Ishida; Toshiaki Aiba; Hirokatsu Miyata; Tohru Den

Appl. Phys. Lett. 87, 253112 (2005) https://doi.org/10.1063/1.2149292

Abstract

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Gold nanoparticles via alloy decomposition and their application to nonvolatile memory

A. Chandra; B. M. Clemens

Appl. Phys. Lett. 87, 253113 (2005) https://doi.org/10.1063/1.2149512

Abstract

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$InAs ∕ InP (001)$ quantum dots emitting at $1.55 μ m$ grown by low-pressure metalorganic vapor-phase epitaxy

A. Michon; G. Saint-Girons; G. Beaudoin; I. Sagnes; L. Largeau; G. Patriarche

Appl. Phys. Lett. 87, 253114 (2005) https://doi.org/10.1063/1.2150271

Abstract

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Deployment of titanium thermal barrier for low-temperature carbon nanotube growth

G. Y. Chen; C. H. P. Poa; S. J. Henley; V. Stolojan; S. R. P. Silva; Sajad Haq

Appl. Phys. Lett. 87, 253115 (2005) https://doi.org/10.1063/1.2150587

Abstract

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Carbon nanotube Schottky diode and directionally dependent field-effect transistor using asymmetrical contacts

M. H. Yang; K. B. K. Teo; W. I. Milne; D. G. Hasko

Appl. Phys. Lett. 87, 253116 (2005) https://doi.org/10.1063/1.2149991

Abstract

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DEVICE PHYSICS

Highly efficient white organic electroluminescent devices based on tandem architecture

Chan-Ching Chang; Jenn-Fang Chen; Shiao-Wen Hwang; Chin H. Chen

Appl. Phys. Lett. 87, 253501 (2005) https://doi.org/10.1063/1.2147730

Abstract

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Spin-coatable inorganic gate dielectric for organic thin-film transistors

Keon-kook Han; S. Young Park; M. Joon Kim; Hong H. Lee

Appl. Phys. Lett. 87, 253502 (2005) https://doi.org/10.1063/1.2147707

Abstract

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Enhanced stability of light-emitting performances of phosphors under low energy electrons

Sergey A. Bukesov; Duk Y. Jeon; Burtrand I. Lee

Appl. Phys. Lett. 87, 253503 (2005) https://doi.org/10.1063/1.2142291

Abstract

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Time-resolved analysis of the set process in an electrical phase-change memory device

Dae-Hwan Kang; Byung-ki Cheong; Jeung-hyun Jeong; Taek Sung Lee; In Ho Kim; Won Mok Kim; Joo-Youl Huh

Appl. Phys. Lett. 87, 253504 (2005) https://doi.org/10.1063/1.2149172

Abstract

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Photodegradation and wavelength dependency of blue polymer light-emitting diode devices

H. J. O. Colditz; R. Kurt; M. Büchel

Appl. Phys. Lett. 87, 253505 (2005) https://doi.org/10.1063/1.2149184

Abstract

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Moisture-induced capacitance-voltage instabilities in mesoporous silica thin films

A. P. Singh; P. Victor; P. G. Ganesan; O. Nalamasu; G. Ramanath

Appl. Phys. Lett. 87, 253506 (2005) https://doi.org/10.1063/1.2146052

Abstract

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Response to anions of $Al Ga N ∕ Ga N$ high-electron-mobility transistors

Y. Alifragis; A. Georgakilas; G. Konstantinidis; E. Iliopoulos; A. Kostopoulos; N. A. Chaniotakis

Appl. Phys. Lett. 87, 253507 (2005) https://doi.org/10.1063/1.2149992

Abstract

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Polymer hot-carrier transistor

Yu-Chiang Chao; Syuan-Ling Yang; Hsin-Fei Meng; Sheng-Fu Horng

Appl. Phys. Lett. 87, 253508 (2005) https://doi.org/10.1063/1.2149219

Abstract

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Spontaneous and piezoelectric polarization effects in wurtzite $ZnO ∕ MgZnO$ quantum well lasers

Seoung-Hwan Park; Doyeol Ahn

Appl. Phys. Lett. 87, 253509 (2005) https://doi.org/10.1063/1.2149294

Abstract

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Performance of ${HfO}_{2} ∕ TiN$ gate stacks with in situ grown and $O_{3}$ chemical interfacial oxide layers

Chang Seo Park; Naim Moumen; Jang Hoan Sim; Joel Barnett; Byoung Hun Lee; Gennadi Bersuker

Appl. Phys. Lett. 87, 253510 (2005) https://doi.org/10.1063/1.2149511

Abstract

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Light emission from an ambipolar semiconducting polymer field-effect transistor

James S. Swensen; Cesare Soci; Alan J. Heeger

Appl. Phys. Lett. 87, 253511 (2005) https://doi.org/10.1063/1.2149986

Abstract

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Organic double-gate field-effect transistors: Logic-AND operation

Lay-Lay Chua; Richard H. Friend; Peter K. H. Ho

Appl. Phys. Lett. 87, 253512 (2005) https://doi.org/10.1063/1.2149351

Abstract

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APPLIED BIOPHYSICS

Enzyme-immobilized ${SiO}_{2} - Si$ electrode: Fast interfacial electron transfer with preserved enzymatic activity

Gang Wang; Siu-Tung Yau

Appl. Phys. Lett. 87, 253901 (2005) https://doi.org/10.1063/1.2149981

Abstract

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INTERDISCIPLINARY AND GENERAL PHYSICS

Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping

Jordana Blacksberg; Michael E. Hoenk; S. Tom Elliott; Stephen E. Holland; Shouleh Nikzad

Appl. Phys. Lett. 87, 254101 (2005) https://doi.org/10.1063/1.2149181

Abstract

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Electron acceleration by a chirped short intense laser pulse in vacuum

K. P. Singh

Appl. Phys. Lett. 87, 254102 (2005) https://doi.org/10.1063/1.2149984

Abstract

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Intense thermal field electron emission from room-temperature stable electride

Yoshitake Toda; Sung Wng Kim; Katsuro Hayashi; Masahiro Hirano; Toshio Kamiya; Hideo Hosono; Takeshi Haraguchi; Hiroshi Yasuda

Appl. Phys. Lett. 87, 254103 (2005) https://doi.org/10.1063/1.2149989

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Absorption of short duration pulses by small, scalable, tapered granular chains

Adam Sokolow; Jan M. M. Pfannes; Robert L. Doney; Masami Nakagawa; Juan H. Agui; Surajit Sen

Appl. Phys. Lett. 87, 254104 (2005) https://doi.org/10.1063/1.2149218

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ERRATA

Erratum: “Double amorphous silicon-carbide $p$ -layer structures producing highly stabilized pin-type protocrystalline silicon multilayer solar cells” [Appl. Phys. Lett. 87, 193509 (2005)]

Seung Yeop Myong; Koeng Su Lim; Joshua M. Pearce

Appl. Phys. Lett. 87, 259901 (2005) https://doi.org/10.1063/1.2150253

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

APPLIED BIOPHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

ERRATA

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